JP5416754B2 - Semiconductor substrate and manufacturing method thereof - Google Patents

Description

  The present invention relates to a semiconductor substrate having a main surface composed of a nonpolar plane and a method for manufacturing the same.

  Conventionally, a light emitting element made of a nitride material such as gallium nitride (GaN) is used as a blue-violet semiconductor laser (LD) used in a disk device or the like, or a light emitting diode (LED) used in a light source for illumination. It has been put into practical use. In these light-emitting elements, an element structure is generally formed on the (0001) plane called the c-plane of GaN where the growth of the crystal film is relatively easy. The c-plane is a so-called polar plane that generates spontaneous polarization and piezoelectric polarization when a heterojunction is formed. However, in recent years, it has been clarified that in the light emitting element formed on the polar surface, the light emission transition probability is lowered due to the influence of a large piezoelectric field, so that the light emission efficiency of the light emitting element is lowered.

  Therefore, nonpolar surfaces such as (1-100) plane (m plane), (11-20) plane (a plane), and other nonpolar planes such as (11-22) plane are different from c plane. It has been studied to form an element structure on a substrate (nonpolar substrate) having a main surface (non-c-plane). Conventionally, a method for manufacturing a nonpolar plane substrate has also been proposed (see, for example, Patent Document 1).

  In Patent Document 1, a GaN layer is grown on a GaAs substrate, and this GaN layer (ingot) is sliced along a plane parallel to the growth direction of the layer, so that a nonpolar plane (non-c plane) is removed. A method of forming a single crystal GaN substrate having a main surface is proposed. In the method for manufacturing a single crystal GaN substrate proposed in Patent Document 1, it is necessary to form a GaN growth layer having a large thickness on a GaAs substrate in order to obtain a non-polar substrate having a large area.

JP 2002-29897 A

  However, in the method for manufacturing a single crystal GaN substrate proposed in Patent Document 1, in order to epitaxially grow a GaN layer having a large thickness on a GaAs substrate, it is necessary to raise the substrate temperature to about 1000 ° C. or higher. However, since the lattice constant and the thermal expansion coefficient of the GaAs substrate are different from those of GaN, the substrate is warped due to thermal stress in the cooling process of the substrate after the GaN layer is grown. Furthermore, defects and cracks occur in the GaN layer due to thermal stress. In other words, in the manufacturing method proposed in Patent Document 1, the warpage of the substrate becomes more prominent as the GaN layer grows thicker, so it is difficult to increase the thickness of the GaN layer. For this reason, there is a problem that it is difficult to increase the size of the nonpolar substrate obtained by slicing along a plane substantially parallel to the growth direction of the GaN layer.

  The present invention has been made to solve the above-described problems, and one object of the present invention is to provide a nonpolar substrate capable of increasing the area and a method for manufacturing the same.

Means for Solving the Problems and Effects of the Invention

To achieve the above object, a method of manufacturing a semiconductor substrate according to a first aspect of the invention, the growth substrate, a first semiconductor layer, and a second semiconductor layer of a material different from the first semiconductor layer product Forming a layered semiconductor growth layer, and dividing the semiconductor growth layer along a direction intersecting a growth surface of the semiconductor growth layer, whereby the first region composed of the first semiconductor layer and the second semiconductor layer are separated from each other; Forming a semiconductor substrate having a main surface composed of a nonpolar plane including the second region.

In the first method for manufacturing a semiconductor substrate according to aspects of the present invention, as hereinabove described, the steps of the first semiconductor layer and the second semiconductor layer forming the semiconductor growth layer which is the product layer, the semiconductor growth layer, semiconductor growth A semiconductor substrate having a main surface composed of a nonpolar plane including a first region composed of a first semiconductor layer and a second region composed of a second semiconductor layer by dividing along a direction intersecting with the growth surface of the layer by and forming, for example, a first semiconductor layer having a different lattice constant with respect to the growth substrate and the second semiconductor layer in the product layer, the thermal expansion coefficient and lattice constant of the crystal growth Due to the difference, the warp direction of the first semiconductor layer relative to the growth substrate and the warp direction of the second semiconductor layer stacked on the first semiconductor layer are substantially opposite to each other. Can be combined For, while mitigating the extent of warpage relative to the growth substrate can continue to form the semiconductor growth layer. This makes it possible to increase the thickness of the semiconductor layer grown on the growth substrate, unlike when a semiconductor layer made of one kind of material is stacked on the growth substrate. Then, a nonpolar substrate (semiconductor substrate) composed of a nonpolar surface whose main surface is increased in area is obtained by dividing the thick semiconductor growth layer in a direction intersecting the growth surface (polar surface). Can do.

In the method of manufacturing a semiconductor substrate according to the first aspect, preferably, the step of forming the semiconductor growth layer includes the first semiconductor layer and the semiconductor layer so that stresses generated in the first semiconductor layer and the second semiconductor layer are relieved from each other. comprising the step of product layer by selecting the material of the second semiconductor layer. According to this structure, for example, a first semiconductor layer and the second semiconductor layer in the product layer, and the warping of the first semiconductor layer on the growth substrate, the laminated on the first semiconductor layer 2 Since the warp deformation of the semiconductor layer cancels each other, a semiconductor growth layer with less warpage deformation can be easily formed.

In the method for manufacturing a semiconductor substrate according to the first aspect, preferably, the thermal expansion coefficients of the growth substrate, the first semiconductor layer, and the second semiconductor layer are α _sub , α ₁ , and α ₂ , respectively. When the lattice constants of the first semiconductor layer and the second semiconductor layer are b ₁ and b ₂ , respectively, and the growth substrate and the first semiconductor layer have a relationship of α _sub > α ₁ , the first semiconductor The layer and the second semiconductor layer have at least _one relationship of α ₁ <α ₂ or b ₁ > b ₂ . With this configuration, when the semiconductor growth layer is formed on the growth substrate under a high temperature condition and then transferred to room temperature, the growth rate is higher than the shrinkage rate of the first semiconductor layer. An internal stress that causes convex warpage deformation on the first semiconductor layer side is generated between the substrate for use and the first semiconductor layer. On the other hand, since the relationship between the first semiconductor layer and the second semiconductor layer has at least _{one of} α ₁ <α ₂ or b ₁ > b ₂ , the shrinkage rate of the second semiconductor layer is the first Since the shrinkage rate of the semiconductor layer is larger, the first semiconductor layer is pulled between the first semiconductor layer and the second semiconductor layer in a direction to pull back the first semiconductor layer to be convexly deformed in the above direction. Internal stress is generated. Therefore, it is possible to easily obtain a semiconductor substrate in which warpage is suppressed.

In the method for manufacturing a semiconductor substrate according to the first aspect, preferably, the thermal expansion coefficients of the growth substrate, the first semiconductor layer, and the second semiconductor layer are α _sub , α ₁ , and α ₂ , respectively. When the lattice constants of the first semiconductor layer and the second semiconductor layer are b ₁ and b ₂ , respectively, and the growth substrate and the first semiconductor layer have a relationship of α _sub <α ₁ , the first semiconductor layer The layer and the second semiconductor layer have a relationship of at least α ₁ > α ₂ or b ₁ <b ₂ . According to this structure, when the semiconductor growth layer is formed on the growth substrate under a high temperature condition and then transferred to room temperature, the growth rate is smaller than the shrinkage rate of the first semiconductor layer. An internal stress is generated between the growth substrate and the first semiconductor layer that causes convex warpage deformation on the growth substrate side. On the other hand, since the relationship between the first semiconductor layer and the second semiconductor layer has at least _{one of} α ₁ > α ₂ or b ₁ <b ₂ , the shrinkage rate of the second semiconductor layer is the first Since the shrinkage rate of the semiconductor layer is smaller, the first semiconductor layer is pulled between the first semiconductor layer and the second semiconductor layer so that the first semiconductor layer is deformed to protrude in the above direction by the second semiconductor layer. Internal stress is generated. Therefore, it is possible to easily obtain a semiconductor substrate in which warpage is suppressed.

In the method for manufacturing a semiconductor substrate according to the first aspect, preferably, the first semiconductor layer and the second semiconductor layer include at least GaN, Al _X Ga _(1-X) N (0 <X ≦ 1), and In _{One of Y} Ga _(1-Y) N (0 <Y ≦ 1) is included, and the first semiconductor layer and the second semiconductor layer have different compositions. If comprised in this way, the semiconductor substrate which consists of a nitride type compound semiconductor by which curvature was suppressed can be obtained easily.

A semiconductor substrate according to a second aspect of the present invention includes a first region composed of a first semiconductor layer and a second region composed of a second semiconductor layer made of a material different from that of the first semiconductor layer and bonded to the first region. provided, having a main surface formed of a non-polar surface including a first region and a second region.

In the semiconductor substrate according to the second aspect of the present invention, as described above, the non-polarity includes the first region made of the first semiconductor layer and the second region made of the second semiconductor layer made of a material different from the first semiconductor layer. by configured to have a main surface consisting of a surface, for example, during the formation of the semiconductor substrate, a first semiconductor layer having a different lattice constant with respect to the growth substrate and the second semiconductor layer when the product layer Due to the difference in thermal expansion coefficient and lattice constant during crystal growth, the warp direction of the first semiconductor layer relative to the growth substrate and the warp direction of the second semiconductor layer stacked on the first semiconductor layer Therefore, the semiconductor growth layer can be formed thick while relaxing the degree of warpage with respect to the growth substrate. This makes it possible to increase the thickness of the semiconductor layer grown on the growth substrate, unlike when a semiconductor layer made of one kind of material is stacked on the growth substrate. Then, by dividing the semiconductor growth layer having a large thickness in the direction intersecting with the growth surface (polar surface), it is possible to obtain a nonpolar substrate composed of a nonpolar surface whose main surface is enlarged.

It is a figure for demonstrating the manufacturing process of the semiconductor substrate by 1st Embodiment of this invention. It is a figure for demonstrating the manufacturing process of the semiconductor substrate by 1st Embodiment of this invention. It is a figure for demonstrating the manufacturing process of the semiconductor substrate by 1st Embodiment of this invention. It is a figure for demonstrating the manufacturing process of the semiconductor substrate by 1st Embodiment of this invention. It is a figure for demonstrating the manufacturing process of the semiconductor substrate by 1st Embodiment of this invention. It is a figure for demonstrating the manufacturing process of the semiconductor substrate by 1st Embodiment of this invention. It is a figure for demonstrating the manufacturing process of the semiconductor substrate by 1st Embodiment of this invention. It is a figure for demonstrating the manufacturing process of the semiconductor substrate by 1st Embodiment of this invention. It is a figure for demonstrating the structure of the semiconductor substrate by 1st Embodiment of this invention. It is a figure for demonstrating the manufacturing process of the semiconductor substrate by 2nd Embodiment of this invention. It is a figure for demonstrating the structure of the semiconductor substrate by 2nd Embodiment of this invention. It is a figure for demonstrating the manufacturing process at the time of forming the semiconductor laser element using the semiconductor substrate by 3rd Embodiment of this invention. It is a figure for demonstrating the structure of the semiconductor laser element using the semiconductor substrate by 3rd Embodiment of this invention. It is a figure for demonstrating the manufacturing process at the time of forming the semiconductor laser element using the semiconductor substrate by 4th Embodiment of this invention. It is a figure for demonstrating the structure of the other semiconductor laser element using the semiconductor substrate by 4th Embodiment of this invention.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings.

(First embodiment)
FIGS. 1-8 is a figure for demonstrating the manufacturing process of the semiconductor substrate by 1st Embodiment of this invention. FIG. 9 is a view for explaining the configuration of the semiconductor substrate according to the first embodiment of the present invention. First, the manufacturing process of the semiconductor substrate 100 and the configuration of the semiconductor substrate 100 according to the first embodiment will be described with reference to FIGS.

  In the manufacturing process of the semiconductor substrate 100 according to the first embodiment, the semiconductor growth layer forming step and the growth substrate removing step are performed, and then the semiconductor substrate forming step by slicing is performed, as shown in FIG. Striped semiconductor substrate 100 whose main surface is a nonpolar surface is formed. Hereinafter, it demonstrates concretely in order of each process.

  First, in the process of forming a semiconductor growth layer, as shown in FIG. 1, the GaN layer 11 is epitaxially grown on the upper surface of the sapphire substrate 10 to a predetermined thickness by metal organic chemical vapor deposition (MOCVD). . At this time, in order to grow the growth surface of the GaN layer 11 as a polar surface (c-plane), the sapphire substrate 10 having a substantially (0001) plane as a main surface is used. The sapphire substrate 10 and the GaN layer 11 are examples of the “growth substrate” and the “first semiconductor layer” in the present invention, respectively.

The growth substrate on which the GaN layer 11 is grown is not limited to the sapphire substrate 10 but a nitride semiconductor substrate or a heterogeneous substrate that is not a nitride semiconductor (for example, an α-SiC substrate, ZnO substrate, spinel substrate, and LiAlO). ₃ substrates) may be used. Further, a GaAs substrate having a substantially (111) plane as a main surface may be used.

  Further, since the GaN layer 11 is formed by a thin film growth method using a reaction from a gas phase to a solid layer, in addition to the MOCVD method, a hydride vapor phase growth method (HVPE method) or an organometallic chloride is used. A vapor phase growth method (MOC method) or the like may be applied.

Here, the thermal expansion coefficient α _sub of the sapphire substrate 10 (having about 7.5 × 10 ⁻⁶ / K for the a-axis and about 8.5 × 10 ⁻⁶ / K for the c-axis), and a GaAs substrate the thermal expansion coefficient of the alpha _sub '(having about 6.0 × ^{10 -6} / K) are both, GaN layer 11 thermal expansion coefficient alpha ₁ (about 5.59 × 10 in the a-axis (see FIG. 1) ^-6 / K and about 3.17 × 10 ⁻⁶ / K in the c-axis) (α _sub , α _sub ′> α ₁ ), so that only the GaN layer 11 is formed on the sapphire substrate 10 When the single layer is thickly laminated, as shown in FIG. 4, the warp deformation convex toward the GaN layer 11 (arrow A direction) due to thermal stress (stress in the arrow P direction) in the cooling process after growth. Occurs. In FIG. 4, the shape of the warp is exaggerated for easy understanding of the above phenomenon.

Thus, in the first embodiment, after the GaN layer 11 is grown, as shown in FIG. 2, Al _X Ga _(1-X) N (0 <X ≦ 1) having a lattice constant different from that of the GaN layer 11 is obtained. Layer 12 is epitaxially grown to a predetermined thickness. In the following description, the Al _X Ga _(1-X) N (0 <X ≦ 1) layer 12 is described as the Al _X Ga _(1-X) N layer 12. The growth of the _{Al X Ga (1-X)} N layer _12, has about 3.112 ≦ _b 2 <3.189 by Al _{X Ga (1-X)} the lattice constant _b 2 of the N layer 12 (a-axis direction ) Is smaller than the lattice constant b ₁ (having about 3.189 in the a-axis direction) of the GaN layer 11 (b ₁ > b ₂ ), the Al _X Ga _(1-X) N layer 12 includes As shown in FIG. 5, a stress is generated in the direction toward the inside of the semiconductor layer (the direction of the arrow Q). Therefore, the internal stress generated in the Al _X Ga _(1-X) N layer 12 acts as a role of pulling back (canceling) the convex deformation toward the GaN layer 11 in the direction of arrow B. The Al _X Ga _(1-X) N layer 12 is an example of the “second semiconductor layer” in the present invention.

In the first embodiment, as shown in FIG. 3, after the Al _X Ga _(1-X) N layer 12 is grown, the GaN layer 11 is epitaxially grown again to a predetermined thickness. Further, after the growth of the GaN layer 11, the Al _X Ga _(1-X) N layer 12 is epitaxially grown again to a predetermined thickness. Again, the lattice constant _{b 1} of the GaN layer _11, in order to have Al _{X Ga (1-X)} magnitude related to the lattice constant _{b 2} of the N layer 12 _(b 1> _{b 2),} mutual semiconductor layer The action which cancels out the stress which arises inside arises (refer to Drawing 5). That is, as shown in FIG. 6, the semiconductor growth layer 20 is not warped on the sapphire substrate 10 by repeatedly laminating the GaN layer 11 and the Al _X Ga _(1-X) N layer 12. Alternatively, it can be formed so as to have a large thickness in a state where the warpage is relaxed. Further, the semiconductor growth layer 20 may be slightly warped. Even when the semiconductor growth layer 20 is slightly warped, the degree of warping is determined when the semiconductor substrate 100 is used as a growth substrate or a support substrate when forming the semiconductor laser element after the formation of the semiconductor substrate 100 described later. , Not to the extent that it will cause trouble.

In this manner, the GaN layer 11 and the Al _X Ga _(1-X) N layer 12 are repeatedly stacked a predetermined number of times, thereby performing a semiconductor growth layer forming step.

  Next, in the step of removing the growth substrate, the sapphire substrate 10 as the growth substrate is separated and removed from the semiconductor growth layer 20 as shown in FIG. At that time, it may be physically removed by a slicer (not shown) or the like. If the growth substrate is a GaAs substrate or the like, it may be removed by chemical etching.

Next, in the process of forming the semiconductor substrate by slicing, as shown in FIG. 8, the growth surface of the semiconductor growth layer 20 in which the GaN layer 11 and the Al _X Ga _(1-X) N layer 12 are repeatedly stacked is formed. Then, slice processing is performed along a dividing line 500 (broken line) using a slicer (not shown) or the like in a substantially vertical direction (stacking direction of the semiconductor growth layer 20 (arrow C direction in FIG. 8)). As a result, the semiconductor substrate 100 is cut into a thin plate shape from the semiconductor growth layer 20. As a result, as shown in FIG. 9, the first regions 11a of the GaN layer 11 and the second regions 12a of the Al _X Ga _(1-X) N layer 12 are alternately stacked in the lateral direction (arrow C direction). A semiconductor substrate 100 is obtained.

  Here, in the first embodiment, as shown in FIG. 9, the cut-out surface 100a of the semiconductor substrate 100 (the surface in which the first region 11a and the second region 12a are arranged in stripes) is the m-plane ((1 The semiconductor substrate 100 having a main surface composed of a nonpolar plane (non-c plane) is obtained by cutting out such that it becomes a (−100) plane) or a plane ((11-20) plane). Here, the m-plane and the a-plane each indicate a plane normal to a polar plane called a c-plane ((0001) plane). The m plane and the a plane are examples of the “nonpolar plane” in the present invention, and the cut surface 100a is an example of the “main surface” in the present invention.

In this case, the thickness of each layer of the GaN layer 11 and the Al _X Ga _(1-X) N layer 12 and the composition ratio X of the Al _X Ga _(1-X) N layer 12 are determined by the material of the growth substrate (sapphire The thermal expansion coefficient α _sub of the substrate 10 or the GaAs substrate, etc., or the spacing between the stripes of the first region 11a and the second region 12a on the desired cut-out surface 100a of the semiconductor substrate 100 needs to be adjusted as appropriate.

For example, when forming a semiconductor laser element, referring to FIG. 9, if a laser element part is formed only on first region 11a of GaN layer 11 of semiconductor substrate 100, the laser element part is not formed. The second region 12 a of the Al _X Ga _(1-X) N layer 12 is preferably formed narrower than the first region 11 a of the GaN layer 11. In that case, the lattice constant b ₂ as the Al _X Ga _(1-X) N layer 12 can be further reduced by increasing the Al composition ratio X. Thereby, since the stress in the direction toward the inside of the semiconductor layer can be increased, the thickness of the Al _X Ga _(1-X) N layer 12 can be further reduced. The size of a normal semiconductor laser element is several hundred μm (one side) × several hundred μm (one side), and the interval between adjacent elements is separated by several tens of μm. Therefore, in the case of forming a laser element only on the first region 11a of GaN layer 11 defines a thickness of the GaN layer 11 to a few 100 [mu] _m, the thickness of the _{Al X Ga (1-X)} N layer 12 It is preferable to form the film in the order of several tens of micrometers. However, if the difference between the lattice constants b ₁ and b ₂ of the GaN layer 11 and the Al _X Ga _(1-X) N layer 12 becomes too large, defects or cracks (cracks) are generated inside the semiconductor layer. Therefore, care must be taken in adjusting the Al composition ratio X.

  In this manner, the semiconductor substrate 100 whose main surface is a nonpolar surface is formed (manufactured) by the manufacturing process according to the first embodiment.

In the first embodiment, as described above, the step of forming the semiconductor growth layer 20 in which the GaN layers 11 and the Al _X Ga _(1-X) N layers 12 are alternately stacked, and the semiconductor growth layer 20 are formed by semiconductor growth. By dividing by a cut surface 100a substantially parallel to the growth surface of the layer 20 (the growth surface in the stacking direction of the GaN layer 11 and the Al _X Ga _(1-X) N layer 12 (arrow C direction in FIG. 8)). , the main surface formed of the first region 11a and the _Al X _{Ga (1-X)} non-polar surface and a second region 12a of the N layer 12 are arranged in striped GaN layer 11 (non-c-plane) (cut surface 100a For example, a GaN layer 11 and an Al _X Ga _(1-X) N layer 12 having different lattice constants relative to the sapphire substrate 10 are stacked alternately. You In this process, the direction of warpage of the GaN layer 11 with respect to the sapphire substrate 10 and the Al _X Ga _(1-X) layered on the GaN layer 11 due to differences in thermal expansion coefficient and lattice constant during crystal growth. Since the warp direction of the N layer 12 can be combined so as to be in a substantially opposite direction, the semiconductor growth layer 20 can be formed while relaxing the degree of warpage with respect to the sapphire substrate 10. it can. This makes it possible to increase the thickness of the semiconductor growth layer 20 to be grown on the sapphire substrate 10, unlike when a semiconductor layer made of one kind of material is stacked on the growth substrate. Then, by dividing the semiconductor growth layer 20 having a large thickness in a direction substantially parallel to the growth surface (polar surface) of the semiconductor growth layer 20, the cut surface 100a (main surface) is increased in area. The semiconductor substrate 100 which consists of a nonpolar surface can be obtained.

In the first embodiment, the step of forming a semiconductor growth layer 20 is, GaN layer 11 and the _{Al X Ga (1-X)} GaN layer 11 as the stress generated in the N layer 12 is relaxed together and Al _X by configuring to include a step of laminating alternately selecting the material of Ga _(1-X) N layer 12, for example, alternating between GaN layer 11 and the _{Al X Ga (1-X)} N layer 12 When stacking, the warp deformation of the GaN layer 11 with respect to the growth substrate (sapphire substrate 10) and the warp deformation of the Al _X Ga _(1-X) N layer 12 stacked on the GaN layer 11 cancel each other. The semiconductor growth layer 20 with less warping deformation can be easily formed.

In the first embodiment, the thermal expansion coefficients of the growth substrate (sapphire substrate 10), the GaN layer 11, and the Al _X Ga _(1-X) N layer 12 are α _sub , α ₁ , and α ₂ , respectively. The lattice constants of the GaN layer 11 and the Al _X Ga _(1-X) N layer 12 are b ₁ and b ₂ , respectively, and the growth substrate (sapphire substrate 10) and the GaN layer 11 have α _sub > In the case of having an α ₁ relationship, the GaN layer 11 and the Al _X Ga _(1-X) N layer 12 are configured to have a relationship of b ₁ > b ₂ , whereby high temperature conditions (about 800 ° C. to In the case where the semiconductor growth layer 20 is formed on the sapphire substrate 10 at 1000 ° C. and then transferred to room temperature, the shrinkage rate of the sapphire substrate 10 is larger than the shrinkage rate of the GaN layer 11. Between the layers 11, the internal stress causing warpage deformation convex to GaN layer 11 side (the arrow A direction in FIG. 4) is generated. On the other hand, since the relationship between the GaN layer 11 and the Al _X Ga _(1-X) N layer 12 has a relationship of b ₁ > b ₂ as described above, the GaN layer 11 and the Al _X Ga _{(1-X) ) Between the} N layer 12, the Al _X Ga _(1-X) N layer 12 causes an internal stress in the direction (in the direction of arrow B in FIG. 5) to pull back the GaN layer 11 being deformed in the above direction. Occur. Therefore, the semiconductor substrate 100 in which the warpage is suppressed can be easily obtained.

In the first embodiment, the GaN layer 11, as well as configured to include _GaN, Al _{X Ga} of _(1-X) N layer 12, a GaN layer 11 with a different composition _{Al X Ga (1-X ) By including} N (0 <X ≦ 1), it is possible to easily obtain the semiconductor substrate 100 made of a nitride-based compound semiconductor in which warpage is suppressed.

(Second Embodiment)
FIG. 10 is a view for explaining a semiconductor substrate manufacturing process according to the second embodiment of the present invention. FIG. 11 is a view for explaining a configuration of a semiconductor substrate according to the second embodiment of the present invention. In the manufacturing process of the semiconductor substrate 110 according to the second embodiment, the angle at which the semiconductor substrate 110 is cut out from the semiconductor growth layer 20 in the process of forming the semiconductor substrate by slicing is different from that of the first embodiment. With reference to FIGS. 10 and 11, the manufacturing process of the semiconductor substrate 110 and the configuration of the semiconductor substrate 110 according to the second embodiment will be described.

  In the second embodiment of the present invention, as shown in FIG. 10, first, after the semiconductor growth layer 20 is formed on the sapphire substrate 10 by the same manufacturing process as in the first embodiment, The sapphire substrate 10 is separated and removed. Thereafter, the process proceeds to a semiconductor substrate forming process by slicing.

Here, in the second embodiment, as shown in FIG. 10, the direction is oblique with respect to the growth surface of the semiconductor growth layer 20 in which the GaN layer 11 and the Al _X Ga _(1-X) N layer 12 are repeatedly stacked. The semiconductor substrate 110 is removed from the semiconductor growth layer 20 by slicing along a dividing line 600 (broken line) in a direction (a direction intersecting with a predetermined angle with respect to the stacking direction of the semiconductor growth layer 20 (arrow C direction)). Cut into a thin plate. As a result, as shown in FIG. 11, the first regions 11a of the GaN layer 11 and the second regions 12a of the Al _X Ga _(1-X) N layer 12 are alternately stacked, and the front side (arrow D) When viewed from the direction of the arrow, the semiconductor substrate 110 in which the stacking direction of the semiconductor growth layer 20 (the direction of arrow C in FIG. 10) has a predetermined angle with respect to the cut surface 110a of the semiconductor substrate 110 is obtained. The cut-out surface 110a is an example of the “main surface” in the present invention.

  In the second embodiment, the semiconductor growth layer 20 is sliced in an oblique direction (the direction of the dividing line 600 in FIG. 10) with respect to the stacking direction (the direction of arrow C in FIG. 10), thereby forming a main surface composed of a semipolar surface. A semiconductor substrate 110 having a surface is obtained. Here, the semipolar plane means a plane inclined with respect to a polar plane called a c plane ((0001) plane) in crystal growth of the GaN layer 11. Even a semipolar plane can be formed on the semiconductor substrate 110 because the piezo electric field can be weakened in the same manner as the semiconductor substrate 100 having the main surface composed of a nonpolar plane (non-c plane) as in the first embodiment. An improvement in light emission efficiency of the light emitting device thus obtained can be expected.

  The remaining effects of the second embodiment are similar to those of the aforementioned first embodiment.

(Third embodiment)
FIG. 12 is a diagram for explaining a manufacturing process for forming the semiconductor laser device using the semiconductor substrate according to the first embodiment of the present invention. FIG. 13 is a view for explaining the configuration of the semiconductor laser device using the semiconductor substrate according to the first embodiment of the present invention. A manufacturing process of the semiconductor laser device 200 according to the third embodiment and a configuration of the semiconductor laser device 200 will be described with reference to FIGS.

  In the manufacturing process of the semiconductor laser device 200 according to the third embodiment of the present invention, the semiconductor laser device layer and the electrode are formed on the semiconductor substrate 100 of the first embodiment, so that the wafer-shaped semiconductor laser device 200 is formed. It is formed. Thereafter, individual semiconductor laser elements 200 are formed by performing a dividing step. Hereinafter, it demonstrates concretely in order of each process.

  First, in the process of forming the semiconductor laser element layer, as shown in FIG. 12, the first cladding layer 101, the active layer 102, and the second cladding layer are formed on the upper surface (main surface) of the semiconductor substrate 100 by MOCVD. Semiconductor laser element layers such as 103 are sequentially stacked. The first cladding layer 101 and the second cladding layer 103 have opposite conductivity types. The first cladding layer 101 has a larger band gap than the active layer 102, and the second cladding layer 103 has a larger band gap than the active layer 102. The material of the first cladding layer 101 and the second cladding layer 103 is particularly GaN, AlGaN, or the like, which is a nitride compound semiconductor. Further, the semiconductor laser element layer having the above-described configuration may be formed of a nitride-based semiconductor layer having a wurtz structure made of GaN, AlN, InN, BN, TlN, or a mixed crystal thereof.

  Further, an optical guide layer having a band gap intermediate between the first cladding layer 101 and the active layer 102 may be formed between the first cladding layer 101 and the active layer 102. Between the two clad layers 103, an optical guide layer having an intermediate band gap between the active layer 102 and the second clad layer 103 may be formed.

  The active layer 102 may be undoped or doped with impurities such as Si. In particular, InGaN or the like is used as the material of the active layer 102. The active layer 102 is formed of, for example, a multiple quantum well (MQW) structure in which four barrier layers and three well layers are alternately stacked. Note that the active layer 102 may be formed of a single layer or a single quantum well (SQW) structure.

  Next, as shown in FIG. 12, a ridge portion 103a extending in a ridge shape in the direction perpendicular to the drawing (the direction of arrow E in FIG. 13) is formed on the upper surface of the second cladding layer 103 by etching or the like. By forming the ridge portion 103a, a waveguide structure is formed. The method for forming the waveguide structure is not limited to the method for forming the ridge portion 103a, and the waveguide structure may be formed by a buried heterostructure or the like.

  Next, in the electrode forming step, as shown in FIG. 12, the electrode 104 is formed on the upper surface of the ridge portion 103a of the second cladding layer 103 by vacuum deposition. Note that a contact layer (not shown) having a smaller band gap than that of the second cladding layer 103 may be formed between the second cladding layer 103 and the electrode 104. Further, the electrode 105 is formed by vacuum deposition on the lower surface of the semiconductor substrate 100 adjusted to a predetermined thickness by polishing or etching.

Next, a dividing process of the semiconductor substrate 100 and the semiconductor laser element layer is performed. Specifically, after the cleavage plane forming step, as shown in FIG. 12, the above-described semiconductor laser element layer (first cladding layer 101, active layer 102) is formed on the first region 11a made of the GaN layer 11 of the semiconductor substrate 100. And the second cladding layer 103) and the ridge 103a are formed, the second region 12a made of the Al _x Ga _(1-X) N layer 12 made of a material different from that of the GaN layer 11 is cut off. That is, as shown in FIG. 12, using a slicer or the like, along the dividing line 700 (broken line), the second region 12a composed of the Al _X Ga _(1-X) N layer 12 and the Al _X Ga _{(1- X)} Both the semiconductor laser element layer stacked on the second region 12 a made of the N layer 12 are cut off from the semiconductor substrate 100. Thereby, as shown in FIG. 13, the chip-shaped semiconductor laser elements 200 having the growth substrate based on the GaN layer 11 are individually separated.

  In the third embodiment, since the semiconductor substrate 100 having the nonpolar surface as the main surface according to the first embodiment is used as a growth substrate, the influence of the piezo electric field does not occur. Can be improved.

(Fourth embodiment)
FIG. 14 is a view for explaining a manufacturing process for forming the semiconductor laser device using the semiconductor substrate according to the first embodiment of the present invention. FIG. 15 is a view for explaining the configuration of another semiconductor laser device using the semiconductor substrate according to the first embodiment of the present invention. In the manufacturing process of the semiconductor laser device 210 according to the fourth embodiment, the ridge portion is formed on the second region 12a made of the Al _X Ga _(1-X) N layer 12 of the semiconductor substrate 100 in the semiconductor laser device layer forming step. The point which forms 103a and the electrode 104 differs from the said 3rd Embodiment. With reference to FIGS. 14 and 15, the manufacturing process of the semiconductor laser device 210 according to the fourth embodiment and the configuration of the semiconductor laser device 210 will be described.

That is, in the fourth embodiment, the second region of the Al _X Ga _(1-X) N layer 12 of the semiconductor substrate 100 according to the first embodiment is formed by the same method as the third embodiment, as shown in FIG. A semiconductor laser element layer (first cladding layer 101, active layer 102, second cladding layer 103, etc.) is formed on 12a, and on second region 12a made of Al _X Ga _(1-X) N layer 12 Then, the ridge 103a and the electrode 104 are formed.

Then, in the fourth embodiment, as shown in FIG. 14, the central portion of the first region 11a made of _{Al X Ga (1-X)} N layer GaN layer 11 sandwiched between 12 adjacent to each other on a semiconductor substrate 100 The neighborhood is divided using a slicer or the like along the dividing line 800 (broken line). As a result, as shown in FIG. 15, a chip-shaped semiconductor laser element 210 composed of a semiconductor laser element layer stacked on the second region 12 a mainly composed of the Al _X Ga _(1-X) N layer 12 is obtained. .

In the fourth embodiment, a ridge portion 103 a is formed on the second region 12 a (see FIG. 14) made of the Al _X Ga _(1-X) N layer 12 in the semiconductor substrate 100. Therefore, when the first cladding layer 101 and the second cladding layer 103 are made of a material such as AlGaN, the lattice constant is between the first cladding layer 101 and the second cladding layer 103 and the second region 12a. And distortion due to differences in thermal expansion coefficients are less likely to occur. As a result, the ridge portion 103a is not easily affected by the above-described distortion, so that the characteristics of the semiconductor laser element are hardly deteriorated.

  In the fourth embodiment, since the semiconductor substrate 100 having the nonpolar surface as the main surface according to the first embodiment is used as a growth substrate, the influence of the piezoelectric field does not occur as in the third embodiment. The light emission efficiency of the semiconductor laser element can be improved.

  The embodiment disclosed this time should be considered as illustrative in all points and not restrictive. The scope of the present invention is shown not by the above description of the embodiments but by the scope of claims for patent, and further includes all modifications within the meaning and scope equivalent to the scope of claims for patent.

For example, in the first to fourth embodiments, the GaN layer 11 (first semiconductor layer) and the Al _X Ga _(1-X) N layer 12 (second semiconductor layer) are repeatedly stacked on the sapphire substrate 10. Although an example in which the semiconductor growth layer forming step is performed has been described, the present invention is not limited thereto, and Al _X Ga _(1-X) N (0 <X ≦ 1) and In _Y Ga ₍₁ ) are applied to the sapphire substrate 10. _{-Y) A} semiconductor growth layer forming step may be performed by repeatedly stacking different kinds of semiconductor layers made of N (0 <Y ≦ 1) or the like.

  In the first and second embodiments, the example in which the sapphire substrate 10 is used as the growth substrate has been described. However, the present invention is not limited to this, and other materials other than the sapphire substrate such as GaAs, SiC, and Si can be used. A substrate or the like may be used.

In the first embodiment, the thermal expansion coefficients of the growth substrate (sapphire substrate 10), the first semiconductor layer (GaN layer 11), and the second semiconductor layer (Al _X Ga _(1-X) N layer 12) are set. Α _sub > α _1, where α _sub , α ₁ , and α ₂ are set, and the lattice constants of the GaN layer 11 and the Al _X Ga _(1-X) N layer 12 are b ₁ and b ₂ , respectively. The example in which the material of the Al _X Ga _(1-X) N layer 12 is selected with respect to the GaN layer 11 so as to have a relationship of b ₁ > b ₂ is shown. However, the material of the first semiconductor layer and the second semiconductor layer may be selected so as to have a relationship of at least α ₁ <α ₂ or b ₁ > b ₂ . Further, even if the materials of the first semiconductor layer and the second semiconductor layer are selected so that α _sub <α ₁ and at least _{one of} α ₁ > α ₂ or b ₁ <b ₂ is satisfied. Good.

  In the third and fourth embodiments, the semiconductor laser elements 200 and 210 are formed using the semiconductor substrate 100 having the nonpolar surface formed in the first embodiment as a main surface. The present invention is not limited to this, and a semiconductor laser element may be formed using the semiconductor substrate 110 having the semipolar surface formed in the second embodiment as a main surface.

  In the third and fourth embodiments, the semiconductor laser elements 200 and 210 are formed using the semiconductor substrate 100 having the nonpolar surface formed in the first embodiment as a main surface. The present invention is not limited to this, and a light emitting diode, a transistor, or the like may be formed instead of the semiconductor laser elements 200 and 210.

10 Sapphire substrate (growth substrate)
11 GaN layer (first semiconductor layer)
11a first region _{12 Al X Ga (1-X} ) N layer (second semiconductor layer)
12a 2nd area | region 100,110 Semiconductor substrate 100a, 110a Cut-out surface (main surface)

Claims (6)

The growth substrate, forming a first semiconductor layer, the semiconductor growth layer and the second semiconductor layer is a product layer of a different material as the first semiconductor layer,
Said semiconductor growth layer, wherein by dividing along a direction intersecting the growth surface of the semiconductor growth layer, non and a second region where the first region made of the first semiconductor layer and made of the second semiconductor layer Forming a semiconductor substrate having a main surface composed of a polar surface. The step of forming the semiconductor growth layer is the product by selecting the material of the first semiconductor layer and the second semiconductor layer as the stress generated in the first semiconductor layer and the second semiconductor layer is relaxed to one another The method for manufacturing a semiconductor substrate according to claim 1, comprising a step of layering. Thermal growth coefficients of the growth substrate, the first semiconductor layer, and the second semiconductor layer are α _sub , α ₁ , and α ₂ , respectively, and lattice constants of the first semiconductor layer and the second semiconductor layer Are b ₁ and b ₂ respectively,
When the growth substrate and the first semiconductor layer have a relationship of α _sub > α ₁ , the first semiconductor layer and the second semiconductor layer have at least α ₁ <α ₂ or b ₁ > b _2. The manufacturing method of the semiconductor substrate of Claim 1 or 2 which has any one relationship of these. Thermal growth coefficients of the growth substrate, the first semiconductor layer, and the second semiconductor layer are α _sub , α ₁ , and α ₂ , respectively, and lattice constants of the first semiconductor layer and the second semiconductor layer Are b ₁ and b ₂ respectively,
When the growth substrate and the first semiconductor layer have a relationship of α _sub <α ₁ , the first semiconductor layer and the second semiconductor layer have at least α ₁ > α ₂ or b ₁ <b _2. The manufacturing method of the semiconductor substrate of Claim 1 or 2 which has any one relationship of these. The first semiconductor layer and the second semiconductor layer include at least GaN, Al _X Ga _(1-X) N (0 <X ≦ 1), and In _Y Ga _(1-Y) N (0 <Y ≦ 1). )
The method for manufacturing a semiconductor substrate according to claim 1, wherein the first semiconductor layer and the second semiconductor layer have different compositions. A first region comprising a first semiconductor layer;
A second region made of a second semiconductor layer made of a material different from that of the first semiconductor layer and joined to the first region ;
Having a main surface formed of a non-polar surface comprising a pre-Symbol first region and the second region, the semiconductor substrate.

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