JP5415002B2 - コーティング装置のためのフラッディングチャンバ - Google Patents
コーティング装置のためのフラッディングチャンバ Download PDFInfo
- Publication number
- JP5415002B2 JP5415002B2 JP2008043320A JP2008043320A JP5415002B2 JP 5415002 B2 JP5415002 B2 JP 5415002B2 JP 2008043320 A JP2008043320 A JP 2008043320A JP 2008043320 A JP2008043320 A JP 2008043320A JP 5415002 B2 JP5415002 B2 JP 5415002B2
- Authority
- JP
- Japan
- Prior art keywords
- flooding
- substrate
- chamber
- fluid
- chamber according
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000000576 coating method Methods 0.000 title claims description 15
- 239000011248 coating agent Substances 0.000 title claims description 14
- 239000007789 gas Substances 0.000 claims description 71
- 239000000758 substrate Substances 0.000 claims description 69
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 4
- 229910052757 nitrogen Inorganic materials 0.000 claims description 2
- 239000012530 fluid Substances 0.000 claims 13
- 238000000034 method Methods 0.000 description 12
- 230000003068 static effect Effects 0.000 description 10
- 238000010586 diagram Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 239000011521 glass Substances 0.000 description 4
- 238000007789 sealing Methods 0.000 description 4
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 238000001771 vacuum deposition Methods 0.000 description 3
- 238000002955 isolation Methods 0.000 description 2
- 238000005086 pumping Methods 0.000 description 2
- 238000010924 continuous production Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000013016 damping Methods 0.000 description 1
- 238000011038 discontinuous diafiltration by volume reduction Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/001—General methods for coating; Devices therefor
- C03C17/002—General methods for coating; Devices therefor for flat glass, e.g. float glass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/06—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
- H01L21/08—Preparation of the foundation plate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2218/00—Methods for coating glass
- C03C2218/10—Deposition methods
- C03C2218/11—Deposition methods from solutions or suspensions
- C03C2218/114—Deposition methods from solutions or suspensions by brushing, pouring or doctorblading
Landscapes
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Life Sciences & Earth Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Agricultural Chemicals And Associated Chemicals (AREA)
- Physical Vapour Deposition (AREA)
- Application Of Or Painting With Fluid Materials (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Description
t=ポンピング時間、
V=容積、
S=ポンプ吸引容量、
P0=初期圧(大気圧)、
P1=ターゲット圧(搬送圧、最終ロック圧)、
ポンピング時間と、それをもってサイクル時間は、以下の基準を用いて短縮され得ることになる:
-ロックチャンバの容積を減少させる、
-ポンプ吸引容量を増加させる、
-P0とP1との比を低下させる。
Claims (14)
- コーティング装置のための流体を導入するフラッディングチャンバであって、少なくとも二つのフラッディングユニット(12、13;41-45、46-50)が互いに向かい合うように設けられ、この中に基板(11;53)が搬送デバイス(10、54)上に中心に配置されており、該基板(11;53)が該フラッディングユニット(12、13;41-45、46-50)の間に固定されるように、該フラッディングユニット(12、13;41-45、46-50)は、ガス流(69、70)を該基板(11;53)上に直接向け、該少なくとも二つのフラッディングユニット(12、13;41-45、46-50)が少なくとも一つの流体供給源(29、32、33、35、36、55)に一定の流体圧力で接続されていることを特徴とする、前記フラッディングチャンバ。
- 該フラッディングユニットが、幾つかの流体貫通開口部(14、15)を備えているフラッディング壁(12、13)であることを特徴とする、請求項1に記載のフラッディングチャンバ。
- 該流体貫通開口部(14、15)の少なくとも一部が、基板(11)の方へ向けられていることを特徴とする、請求項2に記載のフラッディングチャンバ。
- 該フラッディングユニットが、幾つかの流体貫通開口部(59、60)を備え、該基板(11;53)に対して平行に並べられた複数のフラッディングバー(41-45、46-50)であることを特徴とする、請求項1に記載のフラッディングチャンバ。
- 該フラッディングバー(41-45、46-50)が水平方向に互いに隔置されることを特徴とする、請求項4に記載のフラッディングチャンバ。
- 該流体が空気であることを特徴とする、請求項1に記載のフラッディングチャンバ。
- 該流体が窒素であることを特徴とする、請求項1に記載のフラッディングチャンバ。
- 該フラッディング壁(12、13)が、該フラッディング壁(12、13)の隣に配置された真空チャンバ壁(6、7)とともに空洞(16、17)を形成することを特徴とする、請求項2に記載のフラッディングチャンバ。
- 該流体貫通開口部(14、15)がフラッディング壁(12、13)の全側面にわたって分布され、かつ、互いに、直接向かい合っていることを特徴とする、請求項2に記載のフラッディングチャンバ。
- 該空洞(16、17)が共通の流体供給源(29)に接続されることを特徴とする、請求項8に記載のフラッディングチャンバ。
- 該空洞(16、17)が二つの共通の流体供給源(32、33;35、36)に接続されることを特徴とする、請求項8に記載のフラッディングチャンバ。
- 該少なくとも一つの流体供給源(32、33)が、該空洞(16、17)内で終了していることを特徴とする、請求項8に記載のフラッディングチャンバ。
- 該少なくとも一つの流体供給源(35、36)が、該空洞(16、17)の垂直方向における中央部と接続されることを特徴とする、請求項8に記載のフラッディングチャンバ。
- 垂直方向の該複数のフラッディングバー(41-45;46-50)が互いに距離があることを特徴とする、請求項4に記載のフラッディングチャンバ。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP07104144A EP1970467B1 (de) | 2007-03-14 | 2007-03-14 | Flutungskammer für Beschichtungsanlagen |
EP07104144.6 | 2007-03-14 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2008285747A JP2008285747A (ja) | 2008-11-27 |
JP2008285747A5 JP2008285747A5 (ja) | 2012-10-18 |
JP5415002B2 true JP5415002B2 (ja) | 2014-02-12 |
Family
ID=37945473
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008043320A Active JP5415002B2 (ja) | 2007-03-14 | 2008-02-25 | コーティング装置のためのフラッディングチャンバ |
Country Status (5)
Country | Link |
---|---|
EP (1) | EP1970467B1 (ja) |
JP (1) | JP5415002B2 (ja) |
KR (1) | KR100954040B1 (ja) |
CN (1) | CN101270469B (ja) |
TW (1) | TWI408245B (ja) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101439781B1 (ko) | 2013-07-01 | 2014-09-12 | 박태수 | 유리 코팅장치 |
EP2876674A1 (de) | 2013-11-25 | 2015-05-27 | Roth & Rau AG | Vorrichtung zur Rückgewinnung von Inertgas aus Schleusenkammern |
CN112420709B (zh) * | 2019-08-23 | 2023-06-06 | 中国科学院物理研究所 | 转变PbTiO3/SrTiO3超晶格材料的涡旋畴的方法 |
CN110653121B (zh) * | 2019-10-18 | 2020-06-02 | 内蒙古科技大学 | 一种可调节的浆料盒 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04329881A (ja) * | 1991-05-01 | 1992-11-18 | Canon Inc | マイクロ波プラズマcvd法による堆積膜形成装置 |
DE4341634A1 (de) * | 1993-12-07 | 1995-06-08 | Leybold Ag | Vorrichtung für den Transport von scheibenförmigen Substraten in einer Vakuumbeschichtungsanlage |
JPH0863747A (ja) * | 1994-08-22 | 1996-03-08 | Mitsubishi Chem Corp | 磁気記録媒体の製造方法 |
KR0180850B1 (ko) * | 1996-06-26 | 1999-03-20 | 구자홍 | 유리기판 에칭장치 |
US6016611A (en) * | 1998-07-13 | 2000-01-25 | Applied Komatsu Technology, Inc. | Gas flow control in a substrate processing system |
JP4268303B2 (ja) * | 2000-02-01 | 2009-05-27 | キヤノンアネルバ株式会社 | インライン型基板処理装置 |
US6502530B1 (en) * | 2000-04-26 | 2003-01-07 | Unaxis Balzers Aktiengesellschaft | Design of gas injection for the electrode in a capacitively coupled RF plasma reactor |
ATE280436T1 (de) * | 2000-06-22 | 2004-11-15 | Unaxis Balzers Ag | Beschichtungsanlage für scheibenförmige werkstücke |
JP3914717B2 (ja) | 2001-04-13 | 2007-05-16 | 武秀 林 | フラットパネル搬送システム |
DE10319379A1 (de) * | 2003-04-30 | 2004-11-25 | Applied Films Gmbh & Co. Kg | Vorrichtung zum Transportieren eines flachen Substrats in einer Vakuumkammer |
TW200519062A (en) | 2003-12-01 | 2005-06-16 | Samsung Corning Prec Glass Co | Apparatus and method for coating a film on a glass substrate |
EP1713110B1 (de) | 2005-04-08 | 2016-03-09 | Applied Materials GmbH & Co. KG | Anlage zum Beschichten eines Substrats und Modul |
-
2007
- 2007-03-14 EP EP07104144A patent/EP1970467B1/de not_active Not-in-force
-
2008
- 2008-01-17 TW TW097101808A patent/TWI408245B/zh active
- 2008-02-25 JP JP2008043320A patent/JP5415002B2/ja active Active
- 2008-02-28 KR KR1020080018405A patent/KR100954040B1/ko active IP Right Grant
- 2008-02-29 CN CN2008100064991A patent/CN101270469B/zh active Active
Also Published As
Publication number | Publication date |
---|---|
JP2008285747A (ja) | 2008-11-27 |
TWI408245B (zh) | 2013-09-11 |
TW200914642A (en) | 2009-04-01 |
EP1970467B1 (de) | 2012-05-16 |
KR20080084594A (ko) | 2008-09-19 |
EP1970467A1 (de) | 2008-09-17 |
CN101270469A (zh) | 2008-09-24 |
CN101270469B (zh) | 2013-01-23 |
KR100954040B1 (ko) | 2010-04-20 |
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