JP5414203B2 - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法 Download PDF

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Publication number
JP5414203B2
JP5414203B2 JP2008135210A JP2008135210A JP5414203B2 JP 5414203 B2 JP5414203 B2 JP 5414203B2 JP 2008135210 A JP2008135210 A JP 2008135210A JP 2008135210 A JP2008135210 A JP 2008135210A JP 5414203 B2 JP5414203 B2 JP 5414203B2
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single crystal
layer
substrate
crystal semiconductor
laser
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JP2008135210A
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Japanese (ja)
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JP2009283749A (ja
JP2009283749A5 (cg-RX-API-DMAC10.html
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健吾 秋元
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Publication of JP2009283749A5 publication Critical patent/JP2009283749A5/ja
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  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
JP2008135210A 2008-05-23 2008-05-23 半導体装置の作製方法 Expired - Fee Related JP5414203B2 (ja)

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JP2008135210A JP5414203B2 (ja) 2008-05-23 2008-05-23 半導体装置の作製方法

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JP2008135210A JP5414203B2 (ja) 2008-05-23 2008-05-23 半導体装置の作製方法

Publications (3)

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JP2009283749A JP2009283749A (ja) 2009-12-03
JP2009283749A5 JP2009283749A5 (cg-RX-API-DMAC10.html) 2011-06-23
JP5414203B2 true JP5414203B2 (ja) 2014-02-12

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Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5819614B2 (ja) * 2011-02-02 2015-11-24 信越化学工業株式会社 Ｓｏｉウェーハの製造方法
US20130187150A1 (en) * 2012-01-20 2013-07-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR102795448B1 (ko) * 2021-02-25 2025-04-16 후지필름 가부시키가이샤 결함 제거 장치, 결함 제거 방법, 패턴 형성 방법, 및 전자 디바이스의 제조 방법
CN120711990B (zh) * 2025-08-26 2025-10-28 中核光电科技(上海)有限公司 钙钛矿层的激光修复方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0582633A (ja) * 1991-09-19 1993-04-02 Hitachi Ltd 貼りあわせ基体とその製造方法
JPH08250421A (ja) * 1995-03-10 1996-09-27 Canon Inc 半導体基板の製造方法および半導体基板
JPH11163363A (ja) * 1997-11-22 1999-06-18 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
JP4519400B2 (ja) * 2001-12-27 2010-08-04 株式会社半導体エネルギー研究所 半導体装置の作製方法

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JP2009283749A (ja) 2009-12-03

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