JP5410882B2 - プラズマエッチング処理装置とプラズマエッチング処理方法 - Google Patents

プラズマエッチング処理装置とプラズマエッチング処理方法 Download PDF

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JP5410882B2
JP5410882B2 JP2009191355A JP2009191355A JP5410882B2 JP 5410882 B2 JP5410882 B2 JP 5410882B2 JP 2009191355 A JP2009191355 A JP 2009191355A JP 2009191355 A JP2009191355 A JP 2009191355A JP 5410882 B2 JP5410882 B2 JP 5410882B2
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gas
processing
introduction
processing gas
ratio
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JP2009191355A
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Japanese (ja)
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JP2011044567A5 (enExample
JP2011044567A (ja
Inventor
直樹 松本
剛史 塚本
和人 ▲高▼井
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Priority to JP2009191355A priority Critical patent/JP5410882B2/ja
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to US13/391,196 priority patent/US8771537B2/en
Priority to KR1020127004868A priority patent/KR101386552B1/ko
Priority to PCT/JP2010/063543 priority patent/WO2011021539A1/ja
Priority to CN201080036920.9A priority patent/CN102473634B/zh
Priority to TW099127646A priority patent/TWI414017B/zh
Publication of JP2011044567A publication Critical patent/JP2011044567A/ja
Publication of JP2011044567A5 publication Critical patent/JP2011044567A5/ja
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Publication of JP5410882B2 publication Critical patent/JP5410882B2/ja
Priority to US14/287,537 priority patent/US10224220B2/en
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JP2009191355A 2009-08-20 2009-08-20 プラズマエッチング処理装置とプラズマエッチング処理方法 Active JP5410882B2 (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP2009191355A JP5410882B2 (ja) 2009-08-20 2009-08-20 プラズマエッチング処理装置とプラズマエッチング処理方法
KR1020127004868A KR101386552B1 (ko) 2009-08-20 2010-08-10 플라즈마 처리 장치 및 방법과 플라즈마 에칭 처리 장치 및 방법
PCT/JP2010/063543 WO2011021539A1 (ja) 2009-08-20 2010-08-10 プラズマ処理装置とプラズマ処理方法
CN201080036920.9A CN102473634B (zh) 2009-08-20 2010-08-10 等离子体处理装置和等离子体处理方法
US13/391,196 US8771537B2 (en) 2009-08-20 2010-08-10 Plasma treatment device and plasma treatment method
TW099127646A TWI414017B (zh) 2009-08-20 2010-08-19 Plasma processing device and plasma processing method
US14/287,537 US10224220B2 (en) 2009-08-20 2014-05-27 Plasma processing apparatus and plasma etching apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009191355A JP5410882B2 (ja) 2009-08-20 2009-08-20 プラズマエッチング処理装置とプラズマエッチング処理方法

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JP2011044567A JP2011044567A (ja) 2011-03-03
JP2011044567A5 JP2011044567A5 (enExample) 2012-09-27
JP5410882B2 true JP5410882B2 (ja) 2014-02-05

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Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012121289A1 (ja) * 2011-03-08 2012-09-13 東京エレクトロン株式会社 表面波プラズマ処理装置、マイクロ波プラズマ源、およびそれに用いるマイクロ波導入機構
JP5377587B2 (ja) * 2011-07-06 2013-12-25 東京エレクトロン株式会社 アンテナ、プラズマ処理装置及びプラズマ処理方法
JP2014096553A (ja) 2012-10-09 2014-05-22 Tokyo Electron Ltd プラズマ処理方法、及びプラズマ処理装置
WO2014057793A1 (ja) * 2012-10-09 2014-04-17 東京エレクトロン株式会社 プラズマ処理方法、及びプラズマ処理装置
KR101528457B1 (ko) * 2013-10-31 2015-06-10 세메스 주식회사 기판 처리 장치 및 방법
JP6438751B2 (ja) * 2014-12-01 2018-12-19 株式会社日立ハイテクノロジーズ プラズマ処理装置およびプラズマ処理方法
JP6796450B2 (ja) * 2016-10-25 2020-12-09 東京エレクトロン株式会社 プラズマ処理装置

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5082229B2 (ja) * 2005-11-29 2012-11-28 東京エレクトロン株式会社 プラズマ処理装置
JP5192214B2 (ja) * 2007-11-02 2013-05-08 東京エレクトロン株式会社 ガス供給装置、基板処理装置および基板処理方法

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