JP5401683B2 - 両面鏡面半導体ウェーハおよびその製造方法 - Google Patents
両面鏡面半導体ウェーハおよびその製造方法 Download PDFInfo
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- JP5401683B2 JP5401683B2 JP2008199649A JP2008199649A JP5401683B2 JP 5401683 B2 JP5401683 B2 JP 5401683B2 JP 2008199649 A JP2008199649 A JP 2008199649A JP 2008199649 A JP2008199649 A JP 2008199649A JP 5401683 B2 JP5401683 B2 JP 5401683B2
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- Prior art keywords
- polishing
- double
- wafer
- protective film
- semiconductor wafer
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- 239000004065 semiconductor Substances 0.000 title claims description 50
- 238000004519 manufacturing process Methods 0.000 title claims description 20
- 238000000034 method Methods 0.000 title description 11
- 238000005498 polishing Methods 0.000 claims description 221
- 230000001681 protective effect Effects 0.000 claims description 66
- 239000000463 material Substances 0.000 claims description 64
- 230000003746 surface roughness Effects 0.000 claims description 25
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 22
- 229910052710 silicon Inorganic materials 0.000 claims description 22
- 239000010703 silicon Substances 0.000 claims description 22
- 238000007517 polishing process Methods 0.000 claims description 10
- 239000000758 substrate Substances 0.000 claims description 3
- 235000012431 wafers Nutrition 0.000 description 126
- 239000004744 fabric Substances 0.000 description 71
- 239000006061 abrasive grain Substances 0.000 description 60
- 239000007788 liquid Substances 0.000 description 26
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 20
- 239000002245 particle Substances 0.000 description 15
- 239000002649 leather substitute Substances 0.000 description 11
- 230000000694 effects Effects 0.000 description 9
- 235000019592 roughness Nutrition 0.000 description 8
- 239000007864 aqueous solution Substances 0.000 description 7
- 230000000052 comparative effect Effects 0.000 description 7
- 239000002313 adhesive film Substances 0.000 description 6
- 239000008119 colloidal silica Substances 0.000 description 6
- 229920006332 epoxy adhesive Polymers 0.000 description 6
- 239000002994 raw material Substances 0.000 description 6
- 239000000377 silicon dioxide Substances 0.000 description 6
- 239000004745 nonwoven fabric Substances 0.000 description 5
- 229920000728 polyester Polymers 0.000 description 5
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 4
- 238000009826 distribution Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 description 2
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 description 2
- 239000012467 final product Substances 0.000 description 2
- 238000005461 lubrication Methods 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 229920003169 water-soluble polymer Polymers 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229920005830 Polyurethane Foam Polymers 0.000 description 1
- 238000004220 aggregation Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 239000002798 polar solvent Substances 0.000 description 1
- 239000011496 polyurethane foam Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
Images
Landscapes
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008199649A JP5401683B2 (ja) | 2008-08-01 | 2008-08-01 | 両面鏡面半導体ウェーハおよびその製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008199649A JP5401683B2 (ja) | 2008-08-01 | 2008-08-01 | 両面鏡面半導体ウェーハおよびその製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2010040643A JP2010040643A (ja) | 2010-02-18 |
| JP2010040643A5 JP2010040643A5 (enrdf_load_stackoverflow) | 2011-09-15 |
| JP5401683B2 true JP5401683B2 (ja) | 2014-01-29 |
Family
ID=42012901
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008199649A Active JP5401683B2 (ja) | 2008-08-01 | 2008-08-01 | 両面鏡面半導体ウェーハおよびその製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP5401683B2 (enrdf_load_stackoverflow) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2011104964A1 (ja) | 2010-02-25 | 2011-09-01 | 学校法人明治大学 | 植物栄養状態診断方法、植物栄養状態回復方法、植物栄養状態診断装置、及び植物栄養状態回復装置 |
| JP2013220516A (ja) * | 2012-04-18 | 2013-10-28 | Sumitomo Metal Mining Co Ltd | ウェハ基板及びその製造方法 |
| JP6232754B2 (ja) * | 2013-06-04 | 2017-11-22 | 株式会社Sumco | 貼合せｓｏｉウェーハの製造方法 |
| JP6234957B2 (ja) * | 2015-04-20 | 2017-11-22 | 信越半導体株式会社 | エピタキシャルウェーハの製造方法 |
| JP2018037671A (ja) * | 2017-10-18 | 2018-03-08 | 株式会社Sumco | シリコンウェーハの研磨方法 |
| JP2023177967A (ja) * | 2022-06-03 | 2023-12-14 | 信越半導体株式会社 | 単結晶シリコンウェーハのドライエッチング方法、単結晶シリコンウェーハの製造方法、及び単結晶シリコンウェーハ |
| KR102834279B1 (ko) * | 2023-10-12 | 2025-07-15 | 에스케이실트론 주식회사 | 에피택셜 웨이퍼 및 에피택셜 웨이퍼의 제조 방법 |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3169120B2 (ja) * | 1995-07-21 | 2001-05-21 | 信越半導体株式会社 | 半導体鏡面ウェーハの製造方法 |
| JPH10303154A (ja) * | 1997-04-25 | 1998-11-13 | Sumitomo Sitix Corp | 半導体用シリコンウェーハの鏡面研磨方法 |
| CN1610069A (zh) * | 2003-05-15 | 2005-04-27 | 硅电子股份公司 | 抛光半导体晶片的方法 |
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2008
- 2008-08-01 JP JP2008199649A patent/JP5401683B2/ja active Active
Also Published As
| Publication number | Publication date |
|---|---|
| JP2010040643A (ja) | 2010-02-18 |
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