JP5396597B2 - 保護被膜のための接着層 - Google Patents
保護被膜のための接着層 Download PDFInfo
- Publication number
- JP5396597B2 JP5396597B2 JP2007101225A JP2007101225A JP5396597B2 JP 5396597 B2 JP5396597 B2 JP 5396597B2 JP 2007101225 A JP2007101225 A JP 2007101225A JP 2007101225 A JP2007101225 A JP 2007101225A JP 5396597 B2 JP5396597 B2 JP 5396597B2
- Authority
- JP
- Japan
- Prior art keywords
- adhesive layer
- layer
- silicon
- thickness
- carbon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000012790 adhesive layer Substances 0.000 title claims description 77
- 239000011253 protective coating Substances 0.000 title description 22
- 239000010410 layer Substances 0.000 claims description 79
- 229910052710 silicon Inorganic materials 0.000 claims description 47
- 239000010703 silicon Substances 0.000 claims description 47
- 239000000203 mixture Substances 0.000 claims description 34
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 31
- 229910052799 carbon Inorganic materials 0.000 claims description 31
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 21
- HMDDXIMCDZRSNE-UHFFFAOYSA-N [C].[Si] Chemical compound [C].[Si] HMDDXIMCDZRSNE-UHFFFAOYSA-N 0.000 claims description 14
- 229910052751 metal Inorganic materials 0.000 claims description 12
- 239000002184 metal Substances 0.000 claims description 12
- 229910052757 nitrogen Inorganic materials 0.000 claims description 10
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 8
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 8
- 239000000758 substrate Substances 0.000 claims description 8
- 230000001681 protective effect Effects 0.000 claims description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 43
- 238000000576 coating method Methods 0.000 description 37
- 230000007797 corrosion Effects 0.000 description 37
- 238000005260 corrosion Methods 0.000 description 37
- 239000011248 coating agent Substances 0.000 description 36
- 230000000052 comparative effect Effects 0.000 description 24
- 239000010408 film Substances 0.000 description 17
- 238000012360 testing method Methods 0.000 description 10
- 238000000034 method Methods 0.000 description 9
- 238000000151 deposition Methods 0.000 description 6
- 238000000926 separation method Methods 0.000 description 6
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 description 5
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 4
- 230000008901 benefit Effects 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 230000001050 lubricating effect Effects 0.000 description 4
- 238000003969 polarography Methods 0.000 description 4
- 238000009826 distribution Methods 0.000 description 3
- 238000001659 ion-beam spectroscopy Methods 0.000 description 3
- 230000007246 mechanism Effects 0.000 description 3
- 238000003860 storage Methods 0.000 description 3
- 239000013068 control sample Substances 0.000 description 2
- 238000005137 deposition process Methods 0.000 description 2
- 230000001747 exhibiting effect Effects 0.000 description 2
- 238000011065 in-situ storage Methods 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 238000000682 scanning probe acoustic microscopy Methods 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 239000011780 sodium chloride Substances 0.000 description 2
- 238000007736 thin film deposition technique Methods 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000007737 ion beam deposition Methods 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 238000005461 lubrication Methods 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 125000004433 nitrogen atom Chemical group N* 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 238000000844 transformation Methods 0.000 description 1
- 230000003313 weakening effect Effects 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/40—Protective measures on heads, e.g. against excessive temperature
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/21—Circular sheet or circular blank
Landscapes
- Magnetic Heads (AREA)
- Adjustment Of The Magnetic Head Position Track Following On Tapes (AREA)
- Other Surface Treatments For Metallic Materials (AREA)
- Laminated Bodies (AREA)
Description
本発明は、一般的に、金属基板を被覆する保護皮膜に関係する。より具体的には、本発明は、十分な接着特性及び改良された耐食性を示す、磁気読取り/書込みヘッド表面のための薄い接着層に関係する。
本発明は、金属基板、金属基板上に形成された非晶質接着層、接着層上に形成された保護DLC層を含む装置に関係する。接着層は、約8Å未満の厚さを有し、かつ炭素ケイ素炭化物又は炭素ケイ素窒化物の組成を有する。接着層の組成は、金属基板に対して耐食性を与える。
図1Aは、読取り及び/又は書込み変換器、及び記憶媒体を含むディスク駆動機構のスライダの一部の略図である。
図1Aは、ディスク駆動記憶システムのスライダ10及び磁気媒体ディスク12の一部の略図である。スライダ10は、リーディング(leading)エッジ14及びトレーリング(trailing)エッジ16を備え、読取り及び/又は書込み変換器18を含む。スライダ10及び変換器18は、ひとまとめにして磁気ヘッドと呼ぶことができる。保護被膜20は、スライダ10の表面22に適用され、ダイヤモンド状炭素(DLC)層24及び接着層26を含む。炭素層28及び潤滑層30は、ディスク12の表面32に適用される。層24,26,28及び30の全ては、説明のために厚さが誇張されている。特に、層24及び26を参照して、以下に詳細に説明するように、これらの層は全て、きわめて薄くできている。
実施例1〜6は、接着層26及びDLC層24の組成においては、本質的に同一であった。接着層26及びDLC層24の形成方法は、実施例1〜6にわたり本質的に同一であった。実施例1〜6の間の変動要素は、接着層26の厚さTA及びDLC層24の厚さTDであった。
実施例7及び8は、接着層26及びDLC層24の組成において、互いに、本質的に同一であった。接着層26及びDLC層24の形成方法は、実施例7及び8と本質的に同一であった。実施例1〜6のように、実施例7及び8の変動要素は、接着層26の厚さTA及びDLC層24の厚さTDであった。
12 ディスク
14 リーディングエッジ
16 トレーリングエッジ
18 読取り及び/又は書込み変換器
20 保護被膜
22 スライダの表面
24 DLC層
26 接着層
28 炭素層
30 潤滑層
32 ディスクの表面
Claims (9)
- 装置であって、
金属基板と、
金属基板上に形成された非晶質接着層であって、約8Å未満の厚さであり、かつ炭素ケイ素炭化物及び炭素ケイ素窒化物からなる群から選ばれた組成をもつ接着層と、
接着層上に形成され、10Å以上15Å以下の厚さを有する保護DLC層とを含み、
炭素ケイ素炭化物は約65原子%以上の炭素を組成とする、装置。 - 接着層の厚さが約7Å未満である請求項1に記載の装置。
- 接着層の厚さが約6Å未満である請求項1に記載の装置。
- 接着層の厚さが約4Å未満である請求項1に記載の装置。
- 接着層の組成が、約65から85原子%の炭素、及び約15から35原子%のケイ素である請求項1に記載の装置。
- 接着層の組成が、約70から80原子%の炭素、及び約20から30原子%のケイ素である請求項5に記載の装置。
- 接着層の組成が、約10から25原子%の炭素、約30から50原子%のケイ素、及び約25から55原子%の窒素である請求項1に記載の装置。
- 接着層の組成が、約15原子%の炭素、約45原子%のケイ素、及び約40原子%の窒素である請求項7に記載の装置。
- 前記装置は、磁気読取り/書き込みヘッドである、請求項1に記載の装置。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/400,957 US7495865B2 (en) | 2006-04-10 | 2006-04-10 | Adhesion layer for protective overcoat |
US11/400,957 | 2006-04-10 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2007299511A JP2007299511A (ja) | 2007-11-15 |
JP2007299511A5 JP2007299511A5 (ja) | 2010-05-27 |
JP5396597B2 true JP5396597B2 (ja) | 2014-01-22 |
Family
ID=38574974
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007101225A Expired - Fee Related JP5396597B2 (ja) | 2006-04-10 | 2007-04-09 | 保護被膜のための接着層 |
Country Status (4)
Country | Link |
---|---|
US (1) | US7495865B2 (ja) |
JP (1) | JP5396597B2 (ja) |
CN (2) | CN101055723A (ja) |
SG (1) | SG136897A1 (ja) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20100053817A1 (en) * | 2008-09-04 | 2010-03-04 | Robert Glenn Biskeborn | Coated magnetic head and methods for fabrication thereof |
JP2010108532A (ja) * | 2008-10-28 | 2010-05-13 | Toshiba Storage Device Corp | ヘッドスライダ |
US20110058279A1 (en) * | 2009-07-31 | 2011-03-10 | Flint Eric | Overcoat having a low silicon/carbon ratio |
US20110032640A1 (en) * | 2009-08-10 | 2011-02-10 | Hitachi Global Storage Technologies Netherlands B.V. | Multi-layer, thin film overcoat for magnetic media disk |
US8611043B2 (en) | 2011-06-02 | 2013-12-17 | International Business Machines Corporation | Magnetic head having polycrystalline coating |
US8472134B2 (en) | 2011-08-02 | 2013-06-25 | HGST Netherlands B.V. | Air bearing surface overcoat with soft intermediate film, and methods of producing the same |
US20150176121A1 (en) * | 2012-07-25 | 2015-06-25 | Nok Corporation | Fluororesin seal ring |
US9093102B1 (en) | 2013-03-12 | 2015-07-28 | Western Digital Technologies, Inc. | Systems and methods for tuning seed layer hardness in components of magnetic recording systems |
US9570101B2 (en) | 2013-08-28 | 2017-02-14 | Seagate Technology Llc | Magnetic adhesion layer and method of forming same |
US9805748B1 (en) * | 2014-06-24 | 2017-10-31 | Western Digital (Fremont), Llc | System and method for providing a protective layer having a graded intermediate layer |
CN110564334B (zh) * | 2018-06-05 | 2022-01-04 | 德莎欧洲股份公司 | 低温反应固化型粘合剂的耐湿热性和耐化学试剂腐蚀性的提高 |
US10971176B2 (en) | 2019-02-21 | 2021-04-06 | International Business Machines Corporation | Tunnel magnetoresistive sensor with adjacent gap having chromium alloy seed layer and refractory material layer |
Family Cites Families (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4130847A (en) * | 1977-03-31 | 1978-12-19 | International Business Machines Corporation | Corrosion resistant thin film head assembly and method for making |
US4647494A (en) * | 1985-10-31 | 1987-03-03 | International Business Machines Corporation | Silicon/carbon protection of metallic magnetic structures |
US5159508A (en) * | 1990-12-27 | 1992-10-27 | International Business Machines Corporation | Magnetic head slider having a protective coating thereon |
US5271802A (en) * | 1990-12-27 | 1993-12-21 | International Business Machines Corporation | Method for making a thin film magnetic head having a protective coating |
US5175658A (en) * | 1990-12-27 | 1992-12-29 | International Buiness Machines Corporation | Thin film magnetic head having a protective coating and method for making same |
EP0689233B1 (en) * | 1994-06-24 | 2008-10-15 | Sumitomo Electric Industries, Limited | Wafer and method of producing same |
EP0799476A1 (en) * | 1994-12-19 | 1997-10-08 | Seagate Technology, Inc. | A partially etched protective overcoat for a disk drive slider |
US5948532A (en) * | 1996-12-10 | 1999-09-07 | International Business Machines Corporation | Cermet adhesion layer with carbonaceous wear layer for head/disk interfaces |
US5858182A (en) * | 1997-03-20 | 1999-01-12 | Headway Technoloies, Inc. | Bilayer carbon overcoating for magnetic data storage disks and magnetic head/slider constructions |
US6184572B1 (en) * | 1998-04-29 | 2001-02-06 | Novellus Systems, Inc. | Interlevel dielectric stack containing plasma deposited fluorinated amorphous carbon films for semiconductor devices |
US6136421A (en) * | 1998-07-21 | 2000-10-24 | Seagate Technology Llc | Magneto-resistance recording media comprising multilayered protective overcoats |
US6583953B1 (en) * | 1999-07-12 | 2003-06-24 | Mark Lauer | Silicon carbide overcoats for information storage systems and method of making |
US6580170B2 (en) * | 2000-06-22 | 2003-06-17 | Texas Instruments Incorporated | Semiconductor device protective overcoat with enhanced adhesion to polymeric materials |
US6638608B1 (en) * | 2001-03-16 | 2003-10-28 | Seagate Technology Llc | Protection overcoat for recording media |
US6664685B2 (en) * | 2001-11-16 | 2003-12-16 | Seagate Technology Llc | High adhesion, wear resistant coatings for spindle motors in disk drive/storage applications |
US6961213B2 (en) * | 2002-06-24 | 2005-11-01 | Seagate Technology Llc | Disk drive spindle motor having hydrodynamic bearing working surface with low friction layer formed on wear resistant layer |
JP3585917B2 (ja) * | 2002-07-11 | 2004-11-10 | Tdk株式会社 | 薄膜磁気ヘッド、その製造方法及びそれを用いた磁気ディスク装置 |
US7279239B2 (en) * | 2002-08-07 | 2007-10-09 | Kabushiki Kaisha Toyota Chuo Kenkyusho | Laminating product including adhesion layer and laminate product including protective film |
WO2004075177A1 (ja) * | 2003-02-19 | 2004-09-02 | Fujitsu Limited | 磁気ヘッドスライダ |
US7175926B2 (en) * | 2004-02-12 | 2007-02-13 | Seagate Technology Llc | Dual-layer carbon-based protective overcoats for recording media by filtered cathodic ARC deposition |
JP2007523497A (ja) * | 2004-02-20 | 2007-08-16 | アクテル・コーポレイシヨン | 炭素含有アンチヒューズ材料を使用した再プログラム可能な金属−金属間のアンチヒューズ |
US20060012014A1 (en) * | 2004-07-15 | 2006-01-19 | International Business Machines Corporation | Reliability of low-k dielectric devices with energy dissipative layer |
JP2006107673A (ja) * | 2004-10-08 | 2006-04-20 | Shinka Jitsugyo Kk | 磁気ヘッド及びその製造方法、並びにヘッドサスペンションアセンブリ |
-
2006
- 2006-04-10 US US11/400,957 patent/US7495865B2/en active Active
-
2007
- 2007-03-26 SG SG200702706-3A patent/SG136897A1/en unknown
- 2007-04-09 JP JP2007101225A patent/JP5396597B2/ja not_active Expired - Fee Related
- 2007-04-09 CN CNA2007100968883A patent/CN101055723A/zh active Pending
- 2007-04-09 CN CN201510079514.5A patent/CN104616669A/zh active Pending
Also Published As
Publication number | Publication date |
---|---|
US20070236837A1 (en) | 2007-10-11 |
CN101055723A (zh) | 2007-10-17 |
CN104616669A (zh) | 2015-05-13 |
SG136897A1 (en) | 2007-11-29 |
US7495865B2 (en) | 2009-02-24 |
JP2007299511A (ja) | 2007-11-15 |
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