JP5393848B2 - Light emitting device and method for manufacturing light emitting device - Google Patents

Description

The present invention is a thin film transistor (hereinafter referred to as a thin film transistor) in which a peeled layer to be peeled is attached to a substrate and transferred.
The present invention relates to a semiconductor device having a circuit including a TFT and a manufacturing method thereof. For example, an electro-optical device typified by a liquid crystal module and a light-emitting device typified by an EL module,
The present invention also relates to an electronic device in which such a device is mounted as a part.

Note that in this specification, a semiconductor device refers to all devices that can function by utilizing semiconductor characteristics, and an electro-optical device, a light-emitting device, a semiconductor circuit, and an electronic device are all semiconductor devices.

In recent years, a technique for forming a thin film transistor (TFT) using a semiconductor thin film (having a thickness of about several to several hundred nm) formed on a substrate having an insulating surface has attracted attention. Thin film transistors are widely applied to electronic devices such as ICs and electro-optical devices, and development of switching devices for image display devices is urgently required.

Various applications using such an image display device are expected, but the use for portable devices is attracting attention. Currently, many glass substrates and quartz substrates are used, but they have the disadvantage of being easily broken and heavy. Further, in mass production, it is difficult to increase the size of a glass substrate or a quartz substrate, which is not suitable. Therefore, attempts have been made to form TFT elements on a flexible substrate, typically a flexible plastic film.

However, since the heat resistance of the plastic film is low, the maximum temperature of the process has to be lowered, and as a result, TFTs having better electrical characteristics cannot be formed than when formed on a glass substrate. Therefore, a high-performance light-emitting element or liquid crystal display device using a plastic film has not been realized.

If a flexible substrate such as a plastic film is used, an organic light emitting device (OLED:
If a light emitting device or an organic light emitting device) can be manufactured, it can be used for displays with curved surfaces, show windows, etc. in addition to being thin and lightweight. it can.
Therefore, the application is not limited to portable devices, and the application range is very wide.

However, a substrate made of plastic is generally easy to transmit moisture and oxygen, and deterioration of the organic light emitting layer is promoted by these materials. Therefore, the lifetime of the light emitting device is particularly likely to be shortened. Therefore, conventionally, an insulating film such as silicon nitride or silicon nitride oxide is provided between the plastic substrate and the OLED to prevent moisture and oxygen from being mixed into the organic light emitting layer.

In addition, a substrate such as a plastic film is generally vulnerable to heat, and if the film formation temperature of an insulating film such as silicon nitride or silicon nitride oxide is too high, the substrate is likely to be deformed.
On the other hand, if the film formation temperature is too low, the film quality is deteriorated and it is difficult to sufficiently prevent the permeation of moisture and oxygen. Another problem is that when a device provided on a substrate such as a plastic film is driven, heat is locally generated and a part of the substrate is deformed or deteriorated.

Further, when the thickness of an insulating film such as silicon nitride or silicon nitride oxide is increased in order to prevent moisture and oxygen from permeating, stress increases and cracks are likely to occur. In addition, when the film thickness is increased, the film is likely to crack when the substrate is bent. Further, when the substrate is peeled off, the peeled layer is bent, and the peeled layer may be cracked.

In view of the above problems, the present invention provides a semiconductor device capable of suppressing deterioration due to permeation of moisture and oxygen, for example, a light emitting device having an OLED formed on a plastic substrate, and a liquid crystal display device using the plastic substrate. Let it be an issue.

In the present invention, after a layer to be peeled including elements is formed on a substrate, the layer to be peeled is bonded to a support and peeled off from the substrate to peel the layer to be peeled, and then a thin film in contact with the layer to be peeled is formed. After that, it is bonded to the transfer body. By forming a thin film in contact with the layer to be peeled, the cracks generated during peeling are repaired, and a film having thermal conductivity as the thin film in contact with the layer to be peeled, specifically, aluminum nitride or aluminum nitridation The use of the material has the effect of suppressing the deterioration of the element by diffusing the heat generation of the element and the effect of protecting the transfer body 22, specifically, the deformation and alteration of the plastic substrate. A film having thermal conductivity also has an effect of preventing entry of impurities such as moisture and oxygen from the outside.

Configuration 1 of the invention disclosed in this specification includes a light-emitting element including a cathode, an organic compound layer in contact with the cathode, and an anode in contact with the organic compound layer on a substrate having an insulating surface, and the anode The light emitting device includes an insulating film in contact with the insulating film and a film having thermal conductivity in contact with the insulating film.

According to a second aspect of the invention, there is provided a substrate having an insulating surface, an adhesive layer in contact with the substrate, a film having thermal conductivity in contact with the adhesive layer, and an insulating film in contact with the film having thermal conductivity. And a light emitting device having a cathode, an organic compound layer in contact with the cathode, and an anode in contact with the organic compound layer on the insulating film.

In each of the above structures, the thermal conductive film is a film that is transparent or translucent to visible light.

In each of the above structures, the thermal conductive film is formed of a nitride containing aluminum, a nitride oxide containing aluminum, or an oxide containing aluminum. Further, a laminated film combining these films may be used as the heat conductive film. For example, aluminum nitride (AlN) and aluminum nitride oxide (AlN _X O _Y (X
> Y)) or a stack of aluminum nitride oxide (AlN _X O _Y (X> Y)) and aluminum oxynitride (AlN _X O _Y (X <Y)) may be used.

In each of the above structures, the film having thermal conductivity is a film containing at least nitrogen and oxygen, and a ratio of oxygen to nitrogen in the film is 0.1% to 30%. .

In each of the above structures, the substrate having an insulating surface is a plastic substrate or a glass substrate.

According to a third aspect of the invention, there is provided a transfer body, a first adhesive layer in contact with the transfer body, a film having thermal conductivity in contact with the first adhesive layer, and a film having thermal conductivity. An insulating film in contact with the insulating film; a layer including an element on the insulating film; a second adhesive layer (such as a sealant) in contact with the layer including the element; and a support in contact with the second adhesive layer. This is a featured semiconductor device.

In the above structure, when a liquid crystal display device is manufactured, the support is a counter substrate, the element is a thin film transistor connected to a pixel electrode, and the pixel electrode and the transfer body are interposed between the pixel electrode and the transfer body. It is characterized by being filled with a liquid crystal material. Note that a plastic substrate or a glass substrate may be used as the transfer body and the counter substrate.

Further, the structure of the invention related to the method for manufacturing a semiconductor device for realizing the structure shown in each of the above structures 1 to 3 includes a step of forming a nitride layer on a substrate, and an oxide layer on the nitride layer. A step of forming, a step of forming an insulating layer on the oxide layer, a step of forming a layer including an element on the insulating layer, and attaching a support to the layer including the element. Peeling from the substrate by physical means in the layer of the oxide layer or at the interface, forming a film having thermal conductivity on the insulating layer or the oxide layer, and film having the thermal conductivity A method of manufacturing a semiconductor device, comprising: adhering a transfer body to the substrate and sandwiching the element between the support and the transfer body.

In this specification, a physical means is a means recognized not by chemistry but by physics, and specifically, a mechanical means or a mechanical means having a process that can be reduced to the laws of mechanics. , Means to change some mechanical energy (mechanical energy). However, when peeling by physical means, it is necessary to make the bonding force between the oxide layer and the nitride layer smaller than the bonding force with the support.

In the structure related to the method for manufacturing the semiconductor device, the film having thermal conductivity is:
It is characterized by being made of a nitride containing aluminum, a nitride oxide containing aluminum, or an oxide containing aluminum. Further, a laminated film combining these films may be used as the heat conductive film.

In the configuration related to the method for manufacturing a semiconductor device, the nitride layer contains a metal material, and the metal material includes Ti, Al, Ta, W, Mo, Cu,
An element selected from Cr, Nd, Fe, Ni, Co, Ru, Rh, Pd, Os, Ir, and Pt, or a single layer made of an alloy material or a compound material containing the element as a main component, or a metal thereof It is characterized by being a laminate of mixtures.

In the structure related to the method for manufacturing the semiconductor device, heat treatment or treatment with laser light irradiation is performed before peeling by the physical means.

In the structure related to the method for manufacturing a semiconductor device, the oxide layer is a single layer made of a silicon oxide material or a metal oxide material, or a stacked layer thereof.

Further, in the structure related to the method for manufacturing a semiconductor device, the element is a thin film transistor having a semiconductor layer as an active layer, and the step of forming the semiconductor layer includes heat treatment or laser light on the semiconductor layer having an amorphous structure. A semiconductor layer having a crystal structure is characterized by being crystallized by a process of performing irradiation.

In the structure related to the method for manufacturing a semiconductor device, in manufacturing a liquid crystal display device, the support is a counter substrate, the element includes a pixel electrode, the pixel electrode, the counter substrate, It is characterized by being filled with a liquid crystal material.

In the structure related to the method for manufacturing a semiconductor device, when a light-emitting device typified by a light-emitting device is manufactured, a substance that promotes deterioration of an organic compound layer such as moisture or oxygen enters from the outside using a support as a sealing material. In order to prevent this, it is preferable to completely shut off the light emitting element from the outside. In this case, the element is a light emitting element.

In each of the above structures, in order to further promote peeling, heat treatment or laser light irradiation may be performed before peeling by the physical means. In this case, a material that absorbs laser light may be selected for the nitride layer, and the interface between the nitride and the oxide layer may be heated to facilitate peeling. However, when laser light is used, a light-transmitting substrate is used.

Moreover, in order to promote peeling, a granular oxide may be provided on the nitride layer, and an oxide layer covering the granular oxide may be provided to facilitate peeling.

Note that in this specification, the transfer body is to be bonded to the layer to be peeled after being peeled, and is not particularly limited, and may be a base material having any composition such as plastic, glass, metal, ceramics and the like. Further, in this specification, the support is for adhering to the layer to be peeled when peeling by physical means, and is not particularly limited, and may be plastic, glass, metal,
A base material of any composition such as ceramics may be used. Further, the shape of the transfer body and the shape of the support are not particularly limited, and may be a flat surface, a curved surface, a bendable shape, or a film shape. If weight reduction is the top priority, a film-like plastic substrate such as polyethylene terephthalate (PET), polyethersulfone (
PES)
, Polyethylene naphthalate (PEN), polycarbonate (PC), nylon, polyetheretherketone (PEEK), polysulfone (PSF), polyetherimide (P
Plastic substrates such as EI), polyarylate (PAR), and polybutylene terephthalate (PBT) are preferred.

In addition, the present invention can be implemented without being limited to a peeling method, and the structure of another invention related to a method for manufacturing a semiconductor device for realizing the structure shown in each of the above structures 1 to 3 is as follows.
A step of forming a layer to be peeled including an element on a substrate, a step of bonding a support to the layer to be peeled, a step of peeling the support from the substrate by physical means, and a contact with the release layer And a step of forming a film having thermal conductivity.

In the above structure, as a peeling method, a separation layer is provided between the layer to be peeled and the substrate, the separation layer is removed with a chemical solution (etchant), and the layer to be peeled and the substrate are separated. A separation layer made of amorphous silicon (or polysilicon) is provided between the substrate and the substrate, and a void is generated by passing the substrate and irradiating a laser beam to release hydrogen contained in the amorphous silicon. It is possible to use a known technique such as a method for separating the layer to be peeled from the substrate. Note that in the case of peeling using laser light, it is preferable to form an element included in the layer to be peeled at a heat treatment temperature of 410 ° C. or lower so that hydrogen is not released before peeling.

In this specification, laser light refers to laser light that uses a solid-state laser such as a YAG laser or YVO ₄ laser or a gas laser such as an excimer laser as a laser light source, and the laser oscillation mode is continuous oscillation or pulse oscillation. The beam shape may be any shape such as linear irradiation or spot irradiation, and the scanning method is not particularly limited.

Further, the structure of another invention relating to a method for manufacturing a semiconductor device for realizing the structure shown in each of the above structures 1 to 3 includes a step of forming a layer to be peeled including an element over a substrate, A step of adhering a support, a step of attaching FPC to a part of the layer to be peeled, a step of covering a connecting portion between the FPC and the layer to be peeled with an organic resin and fixing the support to the support, And a step of peeling the support from the substrate by physical means.

Further, in the above configuration, after the peeling step, a step of forming a film having thermal conductivity in contact with the peeling layer, a transfer body is bonded to the film having thermal conductivity, and the support It has a step of sandwiching the layer to be peeled between the transfer body.

The film having thermal conductivity of the present invention can suppress the deterioration of the element by diffusing the heat generation of the element, and can prevent the transfer body, specifically the plastic substrate from being deformed or altered, thereby protecting the substrate. In addition, the film having thermal conductivity according to the present invention can prevent external impurities such as moisture and oxygen from being mixed, and protect the element.

Further, when the layer to be peeled is peeled from the substrate by physical means, even if a crack occurs in the layer to be peeled, it can be repaired by the film having thermal conductivity of the present invention, so that the yield can be improved, Reliability can also be improved.

4A to 4D illustrate a manufacturing process of the present invention. 4A to 4D illustrate a manufacturing process of the present invention. 10A and 10B show a manufacturing process of a TFT. 10A and 10B show a manufacturing process of a TFT. The figure which shows the active matrix substrate before sealing. The external view and sectional drawing of EL module. Sectional drawing of EL module. Sectional drawing of EL module. The figure which shows the film-forming method of an organic compound layer. 10A to 10D show a manufacturing process of an LCD. 10A to 10D show a manufacturing process of an LCD. FIG. 6 is a cross-sectional view of a transflective liquid crystal display device. FIG. 14 illustrates an example of an electronic device. FIG. 14 illustrates an example of an electronic device. Is a graph showing the transmittance of the AlN _X O _Y film of the present invention. A ESCA analysis of AlN _X O _Y film of the present invention. MOS characteristics (AlN _x O _y film) under BT stress. MOS characteristics (SiN film) under BT stress. (Comparative example)

  Embodiments of the present invention will be described below.

  A manufacturing procedure of a typical light emitting device using the present invention will be briefly described with reference to FIGS.

In FIG. 1A, 10 is a substrate, 11 is a nitride layer, 12 is an oxide layer, 13 is a base insulating layer, 1
Reference numerals 4a to 14c denote elements, 15 denotes an OLED, and 16 denotes an interlayer insulating film.

In FIG. 1A, a glass substrate, a quartz substrate, a ceramic substrate, or the like can be used as the substrate 10. Further, a silicon substrate, a metal substrate, or a stainless steel substrate may be used.

First, a nitride layer 11 is formed on a substrate 10 as shown in FIG. A nitride containing a metal material is used as the nitride layer 11. Typical examples of metal materials are Ti, Al, Ta
, W, Mo, Cu, Cr, Nd, Fe, Ni, Co, Ru, Rh, Pd, Os, Ir, P
an element selected from t, or a single layer made of an alloy material or a compound material containing the element as a main component, or a laminate thereof, and nitrides thereof, for example, titanium nitride, tungsten nitride, tantalum nitride, nitride A single layer made of molybdenum or a stacked layer thereof may be used as the nitride layer 11.
Further, a metal layer made of tungsten may be used in place of the nitride layer 11.

Next, an oxide layer 12 is formed on the nitride layer 11. As a typical example of the oxide layer 12, silicon oxide, silicon oxynitride, or a metal oxide material may be used.
Note that the oxide layer 12 may be formed by any film formation method such as sputtering, plasma CVD, or coating.

In the present invention, it is important to make the film stress of the oxide layer 12 different from the film stress of the nitride layer 11. Each film thickness may be appropriately set within a range of 1 nm to 1000 nm, and each film stress may be adjusted. FIG. 1 shows an example in which the nitride layer 11 is formed in contact with the substrate 10 in order to simplify the process. However, an insulating layer serving as a buffer layer between the substrate 10 and the nitride layer 11 may be used. A metal layer may be provided to improve adhesion with the substrate 10.

Next, a layer to be peeled is formed over the oxide layer 12. The layer to be peeled may be a layer including various elements typified by TFTs (thin film diodes, photoelectric conversion elements made of silicon PIN junctions, and silicon resistance elements). Further, heat treatment within a range that the substrate 10 can withstand can be performed. Note that in the present invention, even if the film stress of the oxide layer 12 and the film stress of the nitride layer 11 are different, the film is not peeled off by the heat treatment in the manufacturing process of the layer to be peeled. here,
As the layer to be peeled, the elements 14a and 14b of the drive circuit 23 and the element 14c of the pixel portion 24 are formed on the base insulating layer 13 and are electrically connected to the element 14c of the pixel portion 24.
An interlayer insulating film 16 having a thickness of 10 nm to 1000 nm is formed so as to cover the OLED.
(Fig. 1 (A))

In the case where irregularities are formed on the surface by the nitride layer 11 or the oxide layer 12, the surface may be flattened before and after the base insulating layer is formed. The planarization is preferable because the coverage in the layer to be peeled is good and the layer to be peeled including the element is formed because the element characteristics are easily stabilized. Note that as this planarization treatment, an etch-back method in which a coating film (resist film or the like) is formed and then planarized by etching or the like, a mechanical chemical polishing method (CMP method), or the like may be used.

Next, a film 17 having thermal conductivity is formed on the interlayer insulating film 16. Here, an example in which the film 17 having thermal conductivity is provided on the interlayer insulating film 16 is shown, but the film 17 having thermal conductivity may be formed in contact with the OLED 15. When formed in contact with the OLED 15, the film 17 having thermal conductivity is preferably an insulating film. Thermally conductive film 17
As aluminum nitride (AlN), aluminum nitride oxide (AlN _X O _Y (X> Y)
), Aluminum oxynitride (AlN _X O _Y (X <Y)), aluminum oxide (AlO), beryllium oxide (BeO), or the like can be used. Aluminum nitride oxide (AlN _X O _Y (
When X> Y)), it is desirable that the ratio of oxygen to nitrogen in the film is 0.1% to 30%. Moreover, it is preferable that the film | membrane 17 which has heat conductivity is a film | membrane transparent or semi-transparent with respect to visible light. Here, aluminum nitride (AlN) which has translucency, has a very high thermal conductivity of 2.85 W / cm · K, and an energy gap of 6.28 eV (RT).
Is formed by sputtering. For example, an aluminum nitride (AlN) target is used and the film is formed in an atmosphere in which argon gas and nitrogen gas are mixed. Alternatively, an aluminum (Al) target may be used to form a film in a nitrogen gas atmosphere. Moreover, the film 17 having thermal conductivity also has an effect of preventing the entry of substances that promote the deterioration of the OLED 15 such as moisture and oxygen from the outside.

Further, the transmittance of the AlN _x O _y film at a film thickness of 100 nm is shown in FIG. As shown in FIG. 15, the AlN _X O _Y film has very high translucency (transmittance of 80% to 90% in the visible light region) and does not hinder light emission from the light emitting element.

In the present invention, the AlN _X O _Y film is formed by sputtering, for example, aluminum nitride (A
lN) Using a target, film formation is performed in an atmosphere in which argon gas, nitrogen gas, and oxygen gas are mixed. The AlN _X O _Y film contains several atm% or more of nitrogen, preferably 2.5 atm% to 47.5 atm%.
The nitrogen concentration can be adjusted by appropriately adjusting the sputtering conditions (substrate temperature, source gas and its flow rate, film forming pressure, etc.). The obtained Al
Fig. 1 shows the composition of N _X O _Y film analyzed by ESCA (Electron Spectroscopy for Analysis).
It is shown in FIG. Alternatively, an aluminum (Al) target may be used to form a film in an atmosphere containing nitrogen gas and oxygen gas. Note that the present invention is not limited to the sputtering method, and a vapor deposition method or other known techniques may be used.

Further, in order to confirm the blocking effect of moisture and oxygen by the AlN _X O _Y film, the film thickness is 200
a sample in which an OLED is sealed with a film substrate provided with a nm AlN _x O _y film, and a film thickness of 2
A sample in which an OLED was sealed with a film substrate provided with a 00 nm SiN film was prepared, and an experiment was conducted to examine changes over time in a steam atmosphere heated to 85 degrees.
Compared with the film sample, the AlN _X O _Y film sample had a longer OLED life and could emit light for a long time. From this experimental result, it can be read that the AlN _X O _Y film is a material film that can prevent a substance that promotes deterioration of the organic compound layer, such as impurities such as moisture and oxygen, from entering from the outside of the SiN film.

Further, in order to confirm the alkali metal blocking effect by the AlN _X O _Y film, a 50 nm thick thermal oxide film is provided on the silicon substrate, and a 40 nm thick AlN _X O _Y film is provided thereon.
An aluminum electrode containing Li is provided thereon, an aluminum electrode containing Si is provided on the surface of the silicon substrate opposite to the surface on which these films are provided, heat treatment is performed at 300 ° C. for 1 hour, and then BT stress is applied. Test (± 1.7 MV / cm, 150 ° C., 1 hour) was conducted to obtain MOS characteristics (C
-V characteristic) was measured. The experimental results are shown in FIG. The CV characteristics shown in FIG. 17 are shifted to the positive side when a positive voltage is applied, that is, when + BT, so the cause of the shift is not Li but the alkali metal by the AlN _X O _Y film. It was confirmed that there was a blocking effect. For comparison, an AlLi alloy was formed above the MOS via an insulating film (a silicon nitride film having a thickness of 100 nm), and the characteristic variation of the MOS was similarly examined. The results are shown in FIG. When a positive voltage is applied, that is, when + BT, the CV characteristic fluctuation shown in FIG. 18 is greatly shifted to the negative side, and the cause is that Li is mainly mixed into the active layer. Conceivable.

Next, a support 19 for fixing the layer to be peeled in order to peel off the substrate 10 by physical means.
Is adhered with an adhesive layer 18 such as an epoxy resin. Here, FIG. 1C shows an example in which the mechanical strength of the layer to be peeled is assumed to be insufficient. However, when the mechanical strength of the layer to be peeled is sufficient, It can also peel without the support body which fixes.

Next, the substrate 10 provided with the nitride layer 11 is peeled off by physical means. Since the film stress of the oxide layer and the film stress of the nitride layer 11 are different, the oxide layer can be peeled off with a relatively small force. The bonding strength between the nitride layer and the oxide layer is strong enough to withstand thermal energy, but the nitride layer and the oxide layer have different film stresses. Since it has a stress strain between the two, it is weak to mechanical energy and is optimal for peeling. Thus, the layer to be peeled formed on the oxide layer 12 can be separated from the substrate 10. The state after peeling is shown in FIG. Note that this peeling method allows not only peeling of a layer to be peeled having a small area but also peeling of a layer to be peeled having a large area over the entire surface with a high yield. Further, even if a metal layer made of tungsten is used in place of the nitride layer 11, it can be similarly peeled off.

Next, a film 20 having thermal conductivity is formed again on the peeled surface. (Fig. 2 (B))
This thermally conductive film 20 can repair cracks that occur during peeling. As the film 20 having thermal conductivity, aluminum nitride (AlN) is used.
, Aluminum nitride oxide (AlN _X O _Y (X> Y)), aluminum oxynitride (AlN _X O _Y)
(X <Y)), aluminum oxide (AlO), beryllium oxide (BeO), or the like can be used. Moreover, it is preferable that the film | membrane 20 which has heat conductivity is a film | membrane transparent or semi-transparent with respect to visible light. Here, aluminum nitride (AlN) having a very high thermal conductivity of 2.85 W / cm · K and an energy gap of 6.28 eV (RT) is formed by a sputtering method. Further, the thermally conductive film 20 is formed from an OLED 15 such as moisture or oxygen from the outside.
It also has the effect of preventing the invasion of substances that promote the deterioration.

As described above, the structure in which the OLED 15 is sandwiched between the two layers 17 and 20 having thermal conductivity can be completely blocked from the outside. Although an example using two layers is shown here, a structure in which only one of them is provided may be used.

Further, in any of the two layers 17 and 20 having thermal conductivity, the film thickness is 20 nm to
What is necessary is just to set suitably in the range of 4 micrometers.

Next, the layer to be peeled is attached to the transfer body 22 by an adhesive layer 21 such as an epoxy resin. Here, weight reduction is achieved by using the transfer body 22 as a plastic film substrate. However, if the mechanical strength is sufficient, it is not necessary to provide a transfer member.

In this way, a light emitting device having an OLED formed on a flexible plastic substrate is completed. This light-emitting device has two layers of thermally conductive films 17 and 20 and elements 14a to 14a.
Since the structure sandwiches 14c and the OLED 15, heat generated by the OLED 15 and the elements 14a to 14c can be dissipated. In addition, the films 17 and 20 having thermal conductivity are
It is possible to suppress deterioration due to moisture and oxygen permeation. Then, if necessary, the support or transfer body is divided into a desired shape. Further, an FPC (not shown) is pasted using a known technique. Moreover, although the example which affixes FPC after peeling of a to-be-separated layer was shown here,
An FPC may be attached before peeling, and an organic resin or the like that covers an adhesive portion between the FPC and the layer to be peeled may be formed and fixed to increase the mechanical strength.

Note that in this specification, the transfer body is to be bonded to the layer to be peeled after being peeled, and is not particularly limited, and may be a base material having any composition such as plastic, glass, metal, ceramics and the like. Further, in this specification, the support is for adhering to the layer to be peeled when peeling by physical means, and is not particularly limited, and may be plastic, glass, metal,
A base material of any composition such as ceramics may be used. Further, the shape of the transfer body and the shape of the support are not particularly limited, and may be a flat surface, a curved surface, a bendable shape, or a film shape. If weight reduction is the top priority, a film-like plastic substrate such as polyethylene terephthalate (PET), polyethersulfone (
PES)
, Polyethylene naphthalate (PEN), polycarbonate (PC), nylon, polyetheretherketone (PEEK), polysulfone (PSF), polyetherimide (P
Plastic substrates such as EI), polyarylate (PAR), and polybutylene terephthalate (PBT) are preferred.

The present invention having the above-described configuration will be described in more detail with the following examples.

An embodiment of the present invention will be described with reference to FIGS. Here, a method for simultaneously manufacturing a CMOS circuit in which an n-channel TFT and a p-channel TFT are complementarily combined on the same substrate will be described in detail.

First, a nitride layer 101, an oxide layer 102, and a base insulating film 103 are formed over a substrate 100 to obtain a semiconductor film having a crystal structure, and then the semiconductor is separated into island shapes by etching treatment into a desired shape Layers 104 and 105 are formed.

  As the substrate 100, a glass substrate (# 1737) is used.

Further, as the nitride layer 101, Ti, Al, Ta, W, Mo, Cu, Cr, Nd, F
an element selected from e, Ni, Co, Ru, Rh, Pd, Os, Ir, Pt, or a single layer made of an alloy material or a compound material containing the element as a main component, or a nitride of these layers, for example, A single layer formed of titanium nitride, tungsten nitride, tantalum nitride, or molybdenum nitride, or a stacked layer thereof may be used. Here, a titanium nitride film having a thickness of 100 nm is used by sputtering. Note that a buffer layer may be provided when adhesion to the substrate 100 is poor.

As the oxide layer 102, a single layer made of a silicon oxide material or a metal oxide material,
Alternatively, a stack of these layers may be used. Here, a silicon oxide film having a thickness of 200 nm is used by a sputtering method. The bonding force between the metal layer 101 and the oxide layer 102 is strong during heat treatment and does not cause film peeling (also called peeling), but can be easily peeled off within the oxide layer or at the interface by physical means. Can do.

Further, as the base insulating film 103, a film formation temperature of 400 ° C. and a source gas S are formed by plasma CVD.
Silicon oxynitride film made of iH ₄ , NH ₃ , N ₂ O (composition ratio Si = 32%, O = 2
7%, N = 24%, H = 17%) is formed to 50 nm (preferably 10 to 200 nm). Next, after cleaning the surface with ozone water, the oxide film on the surface is removed with dilute hydrofluoric acid (1/100 dilution). Next, a silicon oxynitride film formed from a plasma CVD method using a film forming temperature of 400 ° C. and source gases SiH ₄ and N ₂ O (composition ratio Si = 32%, O = 59%, N = 7%, H = 2%) 10
A semiconductor film (in this case, an amorphous structure) having a thickness of 0 nm (preferably 50 to 200 nm) and having an amorphous structure with a film forming temperature of 300 ° C. and a film forming gas of SiH ₄ by plasma CVD without being exposed to the atmosphere. A silicon film is formed with a thickness of 54 nm (preferably 25 to 80 nm).

Although the base film 103 is shown as a two-layer structure in this embodiment, it may be formed as a single layer film of the insulating film or a structure in which two or more layers are stacked. The material of the semiconductor film is not limited, but is preferably silicon or silicon germanium (Si _x Ge _1-x (X = 0.0001 to 0.02).
)) An alloy or the like may be used and formed by a known means (such as sputtering, LPCVD, or plasma CVD). The plasma CVD apparatus may be a single wafer type apparatus or a batch type apparatus. Alternatively, the base insulating film and the semiconductor film may be successively formed without being exposed to the air in the same film formation chamber.

Next, after cleaning the surface of the semiconductor film having an amorphous structure, the surface is about 2 nm with ozone water.
An extremely thin oxide film is formed.

Next, a nickel acetate salt solution containing 10 ppm of nickel by weight is applied by a spinner. Instead of coating, a method of spreading nickel element over the entire surface by sputtering may be used.

Next, heat treatment is performed for crystallization, so that a semiconductor film having a crystal structure is formed.
For this heat treatment, heat treatment in an electric furnace or irradiation with strong light may be used. When the heat treatment is performed in an electric furnace, the heat treatment may be performed at 500 ° C. to 650 ° C. for 4 to 24 hours. Here, after heat treatment for dehydrogenation (500 ° C., 1 hour), heat treatment for crystallization (550 ° C., 4 hours) is performed to obtain a silicon film having a crystal structure. Note that although crystallization is performed here using heat treatment using a furnace, crystallization may be performed using a lamp annealing apparatus. Although a crystallization technique using nickel as a metal element for promoting crystallization of silicon is used here, other known crystallization techniques such as a solid phase growth method and a laser crystallization method may be used.

Next, after removing the oxide film on the surface of the silicon film having a crystal structure with dilute hydrofluoric acid or the like, a first laser beam (XeCl: wavelength 308 nm) for increasing the crystallization rate and repairing defects left in the crystal grains ) Is performed in the air or in an oxygen atmosphere. Laser light has a wavelength of 400nm
The following excimer laser light and second and third harmonics of a YAG laser are used. The first laser light may be pulsed oscillation or continuous oscillation. In the case of pulse oscillation, a pulsed laser beam with a repetition frequency of about 10 to 1000 Hz is used, the laser beam is focused to 100 to 500 mJ / cm ² by an optical system, and irradiated with an overlap rate of 90 to 95%. The film surface may be scanned. Here, irradiation with the first laser beam is performed in the atmosphere at a repetition frequency of 30 Hz and an energy density of 393 mJ / cm ² . Note that an oxide film is formed on the surface by irradiation with the first laser light because it is performed in the air or in an oxygen atmosphere.

Next, after removing the oxide film formed by irradiation with the first laser beam with dilute hydrofluoric acid, irradiation with the second laser beam is performed in a nitrogen atmosphere or in a vacuum to flatten the surface of the semiconductor film.
This laser light (second laser light) includes excimer laser light with a wavelength of 400 nm or less, Y
The second harmonic and the third harmonic of the AG laser are used. The energy density of the second laser light is larger than the energy density of the first laser light, preferably 30 to 60 mJ / cm ^2.
Enlarge. Here, the second laser beam is irradiated at a repetition frequency of 30 Hz and an energy density of 453 mJ / cm ² , and the PV value of the unevenness on the surface of the semiconductor film (Peak to Valley, the difference between the maximum value and the minimum value) Becomes 50 nm or less. This PV value is AFM (atomic force microscope).
Is obtained.

In this embodiment, the second laser beam is irradiated on the entire surface. However, since the reduction of the off-current is particularly effective for the TFT in the pixel portion, it is possible to selectively irradiate at least the pixel portion. Good.

Next, the surface is treated with ozone water for 120 seconds to form a barrier layer made of an oxide film having a total thickness of 1 to 5 nm.

Next, an amorphous silicon film containing an argon element serving as a gettering site is formed with a thickness of 150 nm on the barrier layer by a sputtering method. The film formation conditions by the sputtering method of this example are as follows:
Deposition pressure is 0.3 Pa and gas (Ar) flow rate is 50 (sccm)
The film forming power is 3 kW, and the substrate temperature is 150 ° C. Note that the atomic concentration of the argon element contained in the amorphous silicon film under the above conditions is 3 × 10 ²⁰ / cm ^{3 to} 6 × 10 ²⁰ / c.
The atomic concentration of m ³ and oxygen is 1 × 10 ¹⁹ / cm ^{3 to} 3 × 10 ¹⁹ / cm ³ . Thereafter, heat treatment is performed at 650 ° C. for 3 minutes using a lamp annealing apparatus to perform gettering.

Next, the amorphous silicon film containing an argon element as a gettering site is selectively removed using the barrier layer as an etching stopper, and then the barrier layer is selectively removed with dilute hydrofluoric acid. Note that during gettering, nickel tends to move to a region with a high oxygen concentration, and thus it is desirable to remove the barrier layer made of an oxide film after gettering. Here, an example in which gettering is performed is shown, but there is no particular limitation, and other gettering methods may be used.

Next, after forming a thin oxide film with ozone water on the surface of the obtained silicon film having a crystal structure (also called a polysilicon film), a mask made of resist is formed and etched into a desired shape to form islands. The semiconductor layers 104 and 105 separated into two are formed. After the semiconductor layer is formed, the resist mask is removed.

Next, the oxide film is removed with an etchant containing hydrofluoric acid, and at the same time, the surface of the silicon film is washed, and then an insulating film containing silicon as a main component to be the gate insulating film 106 is formed. In this embodiment, a silicon oxynitride film (composition ratio Si = 32) is formed to a thickness of 115 nm by plasma CVD.
%, O = 59%, N = 7%, H = 2%).

Next, as illustrated in FIG. 3B, a first conductive film 107 with a thickness of 20 to 100 nm and a second conductive film 108 with a thickness of 100 to 400 nm are stacked over the gate insulating film 106.
In this embodiment, a tantalum nitride film having a film thickness of 50 nm and a film thickness of 370 nm are formed on the gate insulating film 106.
The tungsten films are sequentially stacked.

As the conductive material for forming the first conductive film and the second conductive film, Ta, W, Ti, Mo,
It is formed of an element selected from Al and Cu, or an alloy material or a compound material containing the element as a main component. Alternatively, a semiconductor film typified by a polycrystalline silicon film doped with an impurity element such as phosphorus, or an AgPdCu alloy may be used as the first conductive film and the second conductive film. Moreover, it is not limited to a two-layer structure, for example, a tungsten film with a film thickness of 50 nm, a film thickness of 500 n
A three-layer structure in which an aluminum alloy film (Al—Si) of m and a titanium nitride film with a thickness of 30 nm are sequentially stacked may be employed. In the case of a three-layer structure, tungsten nitride may be used instead of tungsten of the first conductive film, or aluminum instead of the aluminum and silicon alloy (Al-Si) film of the second conductive film. A titanium alloy film (Al—Ti) may be used, or a titanium film may be used instead of the titanium nitride film of the third conductive film. Moreover, a single layer structure may be sufficient.

Next, as shown in FIG. 3C, a resist mask 109 is formed by a light exposure process, and a first etching process is performed to form a gate electrode and a wiring. ICP (Inductively Coupled Plasma) for etching
An etching method may be used. Using the ICP etching method, the film is formed into a desired taper shape by appropriately adjusting the etching conditions (the amount of power applied to the coil-type electrode, the amount of power applied to the substrate-side electrode, the electrode temperature on the substrate side, etc.) Can be etched. In addition,
As an etching gas, a chlorine-based gas typified by Cl ₂ , BCl ₃ , SiCl ₄ , CCl ₄ or the like, a fluorine-based gas typified by CF ₄ , SF ₆ , NF ₃ , or the like, or O ₂ is appropriately used. Can do.

In the first etching process, the end can be tapered by the shape of the mask made of resist and the effect of the bias voltage applied to the substrate side. The angle of the taper part is 15-4
Set to 5 °. In order to etch without leaving a residue on the gate insulating film, it is preferable to increase the etching time at a rate of about 10 to 20%. Since the selection ratio of the silicon oxynitride film to the W film is 2 to 4 (typically 3), the surface where the silicon oxynitride film is exposed is etched by about 20 to 50 nm by the over-etching process. Thus, the first shape conductive layer 1 composed of the first conductive film and the second conductive film is formed by the first etching process.
10, 111 (first conductive layers 110a and 111a and second conductive layers 110b and 111b) are formed.
Reference numeral 112 denotes a gate insulating film, and a region not covered with the first shape conductive layer is etched and thinned by about 20 to 50 nm.

Then, a first doping process is performed to dope n-type impurities (donors). (Fig. 3
(D)) The method is performed by ion doping or ion implantation. The ion doping method is performed at a dose of 1 × 10 ^{13 to} 5 × 10 ¹⁴ / cm ² . As the impurity element imparting n-type, an element belonging to Group 15, typically phosphorus (P) or arsenic (As) is used. In this case, the first shape conductive layers 110 and 111 serve as a mask for the element to be doped, and the acceleration voltage is appropriately adjusted (for example, 20 to 60 keV). (N + regions) 113 and 114 are formed. For example, the impurity region (n
The phosphorus (P) concentration in the (+ region) is in the range of 1 × 10 ²⁰ to 1 × 10 ²¹ / cm ³ .

Next, a second doping process is performed as shown in FIG. The n-type impurity (donor) is doped under a condition of a high acceleration voltage with a lower dose than in the first doping process. For example, the acceleration voltage is 70 to 120 keV, and the dose is 1 × 10 ¹³ / cm ² .
In D), an impurity region is formed inside the first impurity region formed in the semiconductor layer. Doping is performed using the second conductive films 110b and 111b as masks against the impurity elements so that the impurity elements are added to regions below the first conductive films 110a and 111a. Thus, an impurity region (n−region) 115 overlapping with the first conductive films 110a and 111a,
116 is formed. In this impurity region, since the second conductive layers 110a and 111a remain with substantially the same film thickness, the concentration difference in the direction along the second conductive layer is small and 1 × 1.
It is formed at a concentration of 0 ¹⁷ to 1 × 10 ¹⁹ / cm ³ .

Next, a second etching process is performed as shown in FIG. The etching uses an ICP etching method, and CF ₄ , Cl _2, and O ₂ are mixed in an etching gas, and plasma is generated by supplying 500 W of RF power (13.56 MHz) to a coil-type electrode at a pressure of 1 Pa. . 50 W RF (13.56 MHz) power is applied to the substrate side (sample stage), and a lower self-bias voltage is applied than in the first etching process. Under such conditions, the tungsten film is anisotropically etched to leave the tantalum nitride film or titanium film as the first conductive layer. Thus, the second shape conductive layers 117 and 118 (first conductive films 117a and 1
18a and second conductive films 117b and 118b) are formed. 119 is a gate insulating film,
Regions not covered with the second shape conductive layers 117 and 118 are further etched by about 20 to 50 nm to reduce the film thickness.

Then, as shown in FIG. 4C, a resist mask 120 is formed, and a p-type impurity (acceptor) is doped into the semiconductor layer for forming the p-channel TFT. Typically, boron (B) is used. The impurity concentration of the impurity regions (p + regions) 121 and 122 is 2 × 1.
The conductivity type is inverted by adding boron of 1.5 to 3 times the concentration of phosphorus contained, so as to be 0 ^{20 to} 2 × 10 ²¹ / cm ³ .

Through the above steps, impurity regions are formed in the respective semiconductor layers. Second shape conductive layer 11
7 and 118 are gate electrodes. After that, as shown in FIG. 4D, a protective insulating film 123 made of a silicon nitride film or a silicon oxynitride film is formed by a plasma CVD method. Then, a process of activating the impurity element added to each semiconductor layer is performed for the purpose of controlling the conductivity type.

Further, a silicon nitride film 124 is formed and hydrogenation is performed. As a result, hydrogenation can be achieved by diffusing hydrogen in the silicon nitride film 124 into the semiconductor layer.

Next, an interlayer insulating film 125 is formed. The interlayer insulating film 125 is formed using an organic insulating material such as polyimide or acrylic. Of course, TEOS (Tetraethyl Ortho) is formed by plasma CVD.
Although a silicon oxide film formed using silicate may be applied, it is preferable to use the organic material from the viewpoint of improving flatness.

Next, contact holes are formed, aluminum (Al), titanium (Ti)
Source wiring or drain wiring 126 to 128 is formed using tantalum (Ta) or the like.

Through the above process, C is a complementary combination of an n-channel TFT and a p-channel TFT.
A MOS circuit can be obtained.

The p-channel TFT has a channel formation region 130 and impurity regions 121 and 122 that function as a source region or a drain region.

The n-channel TFT includes a channel formation region 131, an impurity region 116a (Gate Overlapped Drain: GOLD region) overlapping the gate electrode 118 made of the second shape conductive layer, and an impurity region 116b (LDD region) formed outside the gate electrode. )
And an impurity region 119 functioning as a source region or a drain region.

Such a CMOS circuit can form part of a driver circuit in an active matrix light-emitting device or an active matrix liquid crystal display device. In addition, such an n-channel TFT or a p-channel TFT can be applied to a transistor in a pixel portion.

By combining such CMOS circuits, basic logic circuits can be configured, and more complex logic circuits (signal division circuits, D / A converters, operational amplifiers, γ correction circuits, etc.) can be configured, and memory It is also possible to form a microprocessor.

Here, an example in which a light-emitting device having an OLED is manufactured using the TFT obtained in Example 1 will be described with reference to FIGS.

FIG. 5 shows an example of a light-emitting device having a pixel portion and a driving circuit for driving the pixel portion on the same insulator (but a state before sealing). Note that a CMOS circuit serving as a basic unit is shown in the driver circuit, and one pixel is shown in the pixel portion. This CMOS circuit can be obtained according to the first embodiment.

In FIG. 7, reference numeral 200 denotes a substrate, 201 denotes a nitride layer, and 202 denotes an oxide layer. An n-channel TFT and a p-channel TF are formed on a base insulating layer 203 provided on the element formation substrate.
A drive circuit 204 made of T, a switching TFT made of a p-channel TFT, and a current control TFT made of an n-channel TFT are formed. In this embodiment, TF
All T are formed of top gate type TFTs.

Description of the n-channel TFT and the p-channel TFT will be omitted because the first embodiment can be referred to. The switching TFT is a p-channel TFT having a structure (double gate structure) having two channel formation regions between a source region and a drain region. Note that this embodiment is not limited to the double gate structure, and may be a single gate structure in which one channel formation region is formed or a triple gate structure in which three channel formation regions are formed.

In addition, a contact hole is provided in the first interlayer insulating film 207 before the second interlayer insulating film 208 is provided on the drain region 206 of the current control TFT. This is to simplify the etching process when forming a contact hole in the second interlayer insulating film 208.
A contact hole is formed in the second interlayer insulating film 208 so as to reach the drain region 206, and a pixel electrode 209 connected to the drain region 206 is provided. Pixel electrode 20
Reference numeral 9 denotes an electrode that functions as a cathode of the OLED, and is formed using a conductive film containing an element belonging to Group 1 or Group 2 of the periodic table. In this embodiment, a conductive film made of a compound of lithium and aluminum is used.

Next, reference numeral 213 denotes an insulating film provided so as to cover the end portion of the pixel electrode 209 and is referred to as a bank in this specification. The bank 213 may be formed using an insulating film or a resin film containing silicon. When a resin film is used, the specific resistance of the resin film is 1 × 10 ⁶ to 1 × 10 ¹² Ωm (preferably 1 ×
When carbon particles or metal particles are added so as to be 10 ⁸ to 1 × 10 ¹⁰ Ωm), dielectric breakdown during film formation can be suppressed.

The OLED 210 includes a pixel electrode (cathode) 209, an organic compound layer 211, and an anode 21.
It consists of two. As the anode 212, a conductive film having a high work function, typically an oxide conductive film, is used. As the oxide conductive film, indium oxide, tin oxide, zinc oxide, or a compound thereof may be used.

In this specification, the organic compound layer is a general term for a layer in which a hole injection layer, a hole transport layer, a hole blocking layer, an electron transport layer, an electron injection layer, or an electron blocking layer are combined with the light emitting layer. It is defined as However, the organic compound layer includes a case where the organic compound film is used as a single layer.

The light emitting layer is not particularly limited as long as it is an organic compound material, and a high molecular material or a low molecular material may be used. A thin film made of a light emitting material that emits light can be used.

Although not shown here, it is effective to provide a passivation film so as to completely cover the OLED 210 after the anode 212 is formed. As the passivation film, a film having thermal conductivity, for example, a film made of aluminum nitride, aluminum nitride oxide, or beryllium oxide is suitable. In addition, as another passivation film, an insulating film including a DLC film, a silicon nitride film, or a silicon nitride oxide film may be used, or a laminate in which these films are combined may be used.

Next, in order to protect the OLED 210, a support is attached as shown in the embodiment and the sealing (or encapsulation) process is performed, and then the substrate 200 provided with the nitride layer 201 is peeled off. The subsequent light-emitting device will be described with reference to FIGS. The transfer body 22 in the embodiment corresponds to the film substrate 600.

6A is a top view showing the EL module, and FIG. 6B is a cross-sectional view taken along line AA ′ of FIG. 6A. In FIG. 6A, a film substrate 601 (for example, an aluminum nitride film) having thermal conductivity is formed on a flexible film substrate 600 (for example, a plastic substrate).
And a pixel portion 602, a source side driver circuit 604, and a gate side driver circuit 6.
03 is formed. These pixel portions and driving circuits can be obtained according to the first and second embodiments.

Reference numeral 618 denotes an organic resin, and 619 denotes a protective film. The pixel portion and the driver circuit portion are covered with the organic resin 618, and the organic resin is covered with the protective film 619. Furthermore, it is sealed with a cover material 620 using an adhesive. The cover material 620 is bonded as a support before peeling. In order to withstand deformation due to heat or external force, the cover material 620 is preferably made of the same material as the film substrate 600, for example, a plastic substrate, and has a concave shape (
The one processed to a depth of 3 to 10 μm is used. Further, it is desirable to form a recess (depth 50 to 200 μm) where the desiccant 621 can be installed by processing. In addition, when an EL module is manufactured by multi-chamfering, the substrate and the cover material may be bonded together, and then divided using a CO ₂ laser or the like so that the end faces coincide.

Reference numeral 608 denotes a wiring for transmitting signals input to the source side driver circuit 604 and the gate side driver circuit 603, and receives a video signal and a clock signal from an FPC (flexible printed circuit) 609 serving as an external input terminal. Although only the FPC is shown here, a printed wiring board (PWB) may be attached to the FPC. The light emitting device in this specification includes not only the light emitting device body but also FPC or P
It shall include the state where WB is attached.

Next, a cross-sectional structure will be described with reference to FIG. A film 601 having thermal conductivity is provided over the film substrate 600, an insulating film 610 is provided thereon, and a pixel portion 602 and a gate side driver circuit 603 are formed above the insulating film 610. Reference numeral 602 denotes a plurality of pixels including a current control TFT 611 and a pixel electrode 612 electrically connected to the drain thereof. The gate side driver circuit 603 is formed using a CMOS circuit in which an n-channel TFT 613 and a p-channel TFT 614 are combined.

These TFTs (including 611, 613, and 614) are the n-channel type T of Example 1 above.
What is necessary is just to produce according to FT and the p channel type TFT of the said Example 1.

Note that the pixel portion 602 and the source side driver circuit 60 are formed on the same substrate in accordance with the first and second embodiments.
4 and after the gate side driving circuit 603 is formed, after attaching a support (here, a cover material), the substrate (not shown) is peeled off, and the insulating film 610 is a film having thermal conductivity in accordance with the embodiment. After forming 601 (for example, an aluminum nitride film), the film substrate 600 is attached. Note that an adhesive layer is provided between the heat-conductive film 601 and the film substrate 600, but is not shown here.

Further, when the cover material 620 has the concave shape shown in FIG. 6B, when the cover material 620 serving as the support is bonded and then peeled off, the portion of the wiring lead-out terminal (connection portion) is the insulating film 61.
Since it becomes only 0 and the mechanical strength becomes weak, it is desirable to attach FPC609 before peeling and further fix with organic resin 622.

Note that the insulating film provided between the TFT and the OLED not only blocks diffusion of impurity ions such as alkali metal ions and alkaline earth metal ions, but also actively ion ions such as alkali metal ions and alkaline earth metal ions. The material which adsorb | sucks is preferable, and also the material which can endure later process temperature is suitable. An example of a material that meets these conditions is a silicon nitride film containing a large amount of fluorine.
The concentration of fluorine contained in the silicon nitride film is 1 × 10 ¹⁹ / cm ³ or more, preferably the fluorine composition ratio in the silicon nitride film is 1 to 5%. Fluorine in the silicon nitride film is combined with alkali metal ions, alkaline earth metal ions, etc., and is adsorbed in the film. As another example, antimony (Sb) that adsorbs alkali metal ions, alkaline earth metal ions, and the like.
An organic resin film containing fine particles of a compound, a tin (Sn) compound, or an indium (In) compound, for example, an organic resin film containing antimony pentoxide fine particles (Sb ₂ O ₅ .nH ₂ O) can also be used. This organic resin film contains fine particles having an average particle diameter of 10 to 20 nm and has a very high light transmittance. The antimony compound represented by the antimony pentoxide fine particles easily adsorbs impurity ions such as alkali metal ions and alkaline earth metal ions.

The pixel electrode 612 functions as a cathode of a light emitting element (OLED). In addition, the pixel electrode 612
Banks 615 are formed on both ends of the organic compound layer, and an organic compound layer 616 and an anode 617 of the light emitting element are formed on the pixel electrode 612.

As the organic compound layer 616, an organic compound layer (a layer for emitting light and moving carriers therefor) may be formed by freely combining a light emitting layer, a charge transport layer, or a charge injection layer. For example, a low molecular organic compound material or a high molecular organic compound material may be used. As the organic compound layer 616, a thin film made of a light emitting material (singlet compound) that emits light (fluorescence) by singlet excitation or a thin film made of a light emitting material (triplet compound) that emits light (phosphorescence) by triplet excitation can be used. it can. It is also possible to use an inorganic material such as silicon carbide for the charge transport layer or the charge injection layer. As these organic materials and inorganic materials, known materials can be used.

The anode 617 also functions as a wiring common to all pixels, and the FPC 6 is connected via the connection wiring 608.
09 is electrically connected. Further, all elements included in the pixel portion 602 and the gate side driver circuit 603 are covered with an anode 617, an organic resin 618, and a protective film 619.

Note that as the organic resin 618, a material that is as transparent or translucent as possible to visible light is preferably used. The organic resin 618 is desirably a material that does not transmit moisture or oxygen as much as possible.

In addition, after completely covering the light emitting element with the organic resin 618, it is preferable to provide a protective film 619 on the surface (exposed surface) of the organic resin 618 at least as shown in FIG. Further, a protective film may be provided on the entire surface including the back surface of the substrate. Here, it is necessary to pay attention so that a protective film is not formed on the portion where the external input terminal (FPC) is provided. The protective film may be prevented from being formed using a mask, or the protective film may not be formed by covering the external input terminal portion with a tape such as Teflon (registered trademark) used as a masking tape in a CVD apparatus. Also good. A film having the same thermal conductivity as that of 601 may be used as the protective film 619.

By encapsulating the light-emitting element with the heat conductive film 601 and the protective film 619 with the above structure, the light-emitting element can be completely blocked from the outside, and an organic compound layer such as moisture or oxygen can be externally blocked. It is possible to prevent a substance that promotes deterioration due to oxidation from entering. In addition, heat generation can be dissipated by the film having thermal conductivity. Therefore, a highly reliable light-emitting device can be obtained.

Alternatively, the pixel electrode may be an anode, and an organic compound layer and a cathode may be stacked to emit light in the direction opposite to that in FIG. An example is shown in FIG. Since the top view is the same, it is omitted.

The cross-sectional structure shown in FIG. 7 will be described below. Insulating film 710 on film substrate 700
A pixel portion 702 and a gate side driver circuit 703 are formed above the insulating film 710. The pixel portion 702 includes a plurality of pixel electrodes 712 electrically connected to the current control TFT 711 and its drain. Formed by the pixels. Note that the film substrate 700 is attached after the layer to be peeled formed on the substrate is peeled according to the embodiment mode. Note that an adhesive layer is provided between the film 701 having thermal conductivity and the film substrate 700, but is not illustrated here. The gate side driver circuit 703 is formed using a CMOS circuit in which an n-channel TFT 713 and a p-channel TFT 714 are combined.

These TFTs (including 711, 713, and 714) are the n-channel type T of Example 1 above.
What is necessary is just to produce according to FT201 and the p-channel TFT 202 of the said Example 1.

The pixel electrode 712 functions as an anode of a light emitting element (OLED). In addition, the pixel electrode 712
Banks 715 are formed on both ends of the organic layer, and an organic compound layer 716 and a cathode 717 of the light emitting element are formed on the pixel electrode 712.

The cathode 717 also functions as a wiring common to all pixels, and is connected to the FPC 7 via the connection wiring 708.
09 is electrically connected. Further, all elements included in the pixel portion 702 and the gate side driver circuit 703 are covered with a cathode 717, an organic resin 718, and a protective film 719. Further, it is bonded to the cover material 720 with an adhesive. Further, the cover material is provided with a recess, and a desiccant 721 is provided.

Further, when the cover material 720 has the concave shape shown in FIG. 7, the cover material 720 serving as a support body.
After bonding, since the portion of the wiring lead terminal becomes only the insulating film 710 and the mechanical strength is weakened when it is peeled off, it is desirable to attach the FPC 709 and then fix it with an organic resin 722 before peeling.

In FIG. 7, since the pixel electrode is an anode and the organic compound layer and the cathode are stacked, the light emission direction is the direction of the arrow shown in FIG.

Although the top gate type TFT has been described as an example here, the present invention can be applied regardless of the TFT structure. For example, it can be applied to a bottom gate type (reverse stagger type) TFT or a forward stagger type TFT. Is possible.

In Example 2, an example using a top gate type TFT was shown, but a bottom gate type TF was used.
It is also possible to use T. Here, an example using a bottom-gate TFT is shown in FIG.

As shown in FIG. 8, the n-channel TFT 913, the p-channel TFT 914, and the n-channel TFT 911 all have a bottom gate structure. These bottom gate structures may be manufactured using a known technique. Note that the active layer of these TFTs may be a semiconductor film (such as polysilicon) having a crystal structure or a semiconductor film (such as amorphous silicon) having an amorphous structure.

In FIG. 8, 900 is a flexible film substrate (for example, a plastic substrate), 901 is a film having thermal conductivity (for example, an aluminum nitride film), 902 is a pixel portion,
903 is a gate side driving circuit, 910 is an insulating film, 912 is a pixel electrode (cathode), 915 is a bank, 916 is an organic compound layer, 917 is an anode, 918 is an organic resin, 919 is a protective film, 920
Is a cover material, 921 is a desiccant, and 922 is an organic resin. Note that the film 90 having thermal conductivity.
There is an adhesive layer between 1 and the film substrate 900, which is not shown here.

In addition, an n-channel TFT 913, a p-channel TFT 914, and an n-channel TFT 9
Since the configuration other than 11 is the same as that of the third embodiment, the description thereof is omitted here.

In this embodiment, when an organic compound layer is formed by an inkjet method, the organic compound layer is continuously provided over a plurality of pixels. Specifically, an example in which an organic compound layer is formed in a stripe shape for a selected column or row with respect to pixel electrodes arranged in a matrix in m rows and n columns will be described. In addition, an organic compound layer is formed in an oval shape or a rectangular shape corresponding to each pixel electrode.

FIG. 9 is a diagram for explaining the present embodiment. FIG. 9A illustrates a structure in which a pixel portion 802, a scan line side driver circuit 803, and a data line side driver circuit 804 are provided over a substrate 801. A separation layer 805 is provided in a stripe shape in the pixel portion 802, and an organic compound layer is formed between the separation layers. The separation layer 805 is provided in order to prevent adjacent organic compound layers from being mixed with each other when the organic compound layer is formed by an inkjet method.

The organic compound layer 806 is formed by discharging a solution containing an organic compound material from the ink head 807. The material of the organic compound layer is not particularly limited, but organic compound layers 806R, 806G, and 806B corresponding to red, green, and blue may be provided for color display.

FIG. 9B is a cross-sectional structure diagram of the conceptual diagram illustrated in FIG. 9A, and illustrates a state where the scan line driver circuit 803 and the pixel portion 802 are formed over the substrate 801. A separation layer 805 is formed in the pixel portion 802, and organic compound layers 806R, 806G, and 806B are formed between the separation layers. The ink head 807 is of an ink jet type, and ink dots 808R, 808G, and 808B corresponding to red, green, and blue colors are ejected according to a control signal. The ejected ink dots 808R, 808G, and 808B adhere to the substrate and function as an organic compound layer through a subsequent drying or baking process. Since the ink head only needs to be scanned in one direction for each column or row, the processing time required for forming the organic compound layer can be shortened.

FIG. 9C is a diagram for explaining the pixel portion in more detail, and the current control TFT 81 is formed on the substrate.
0 and a pixel electrode 812 connected to the current control TFT 810 are provided, and organic compound layers 806R, 806G, and 806B are formed between the separation layers 805 on each pixel electrode. It is desirable that an insulating film 811 having a blocking effect on alkali metal is formed between the pixel electrode 812 and the current control TFT 810.

This example can be applied as one of the methods for forming an organic compound layer in the embodiment mode, example 2, or example 3.

In this embodiment, an active matrix substrate is manufactured using the TFT shown in Embodiment 1, and
A process for manufacturing an active matrix liquid crystal display device by bonding a plastic substrate after peeling the substrate will be described below. FIG. 10 is used for the description.

10A, reference numeral 400 denotes a substrate, 401 denotes a nitride layer, 402 denotes an oxide layer, and 403.
Is a base insulating layer, 404a is an element of the driver circuit 413, and 404b is an element 404 of the pixel portion 414.
Reference numerals b and 405 denote pixel electrodes. Here, an element refers to a semiconductor element (typically a TFT) or an MIM element used as a switching element of a pixel in an active matrix liquid crystal display device. Note that the active layer of the switching element may be a semiconductor film having a crystalline structure (polysilicon or the like) or a semiconductor film having an amorphous structure (such as amorphous silicon).

First, according to Embodiment 1, an n-channel TFT having one electrode as a pixel electrode is formed in the pixel portion 414 on the same substrate, and an n-channel TFT and a p-channel TFT are formed in the drive circuit 413, respectively. After obtaining the active matrix substrate in the state of 10 (A), FIG.
The alignment film 406a is formed on the active matrix substrate and a rubbing process is performed. In addition,
In this embodiment, before forming the alignment film, a columnar spacer (not shown) for maintaining the substrate interval is formed at a desired position by patterning an organic resin film such as an acrylic resin film. Further, instead of the columnar spacers, spherical spacers may be scattered over the entire surface of the substrate.

Here, in order to form a reflective display device, it is desirable to use a material having excellent reflectivity such as a film containing Al or Ag as a main component or a laminated film thereof as a material of the pixel electrode. When the electrode is formed using a transparent conductive film, a transmissive display device can be formed although the number of photomasks is increased by one.

Next, a counter substrate to be a support body 407 is prepared. The counter substrate is provided with a color filter (not shown) in which a colored layer and a light shielding layer are arranged corresponding to each pixel. Also,
A light shielding layer was also provided in the drive circuit portion. A flattening film (not shown) covering the color filter and the light shielding layer was provided. Next, a counter electrode 408 made of a transparent conductive film was formed over the planarizing film in the pixel portion, an alignment film 406b was formed over the entire surface of the counter substrate, and a rubbing process was performed.

Then, the active matrix substrate 400 on which the pixel portion and the drive circuit are formed, and the support 40.
7 is bonded with a sealing material to be an adhesive layer 409. A filler is mixed in the sealing material, and two substrates are bonded to each other with a uniform interval by the filler and the columnar spacer. Thereafter, a liquid crystal material 410 is injected between both substrates and completely sealed with a sealant (not shown). (FIG. 10B) A known liquid crystal material may be used for the liquid crystal material 410.

Next, the substrate 400 provided with the nitride layer or the metal layer 401 is peeled off by physical means. (FIG. 10C) Since the film stress of the oxide layer 402 and the film stress of the nitride layer 401 are different, the oxide layer 402 can be peeled off with a relatively small force.

Next, a film 415 having thermal conductivity is formed on the peeled surface. (FIG. 11A) The thermal conductive film 415 can repair cracks generated during peeling. As the film 415 having thermal conductivity, aluminum nitride (AlN), aluminum nitride oxide (AlNO), beryllium oxide (BeO), or the like can be used. In addition, the film 415 having thermal conductivity is preferably a film that is transparent or translucent to visible light. Here, the thermal conductivity is very high at 2.85 W / cm · K, and the energy gap is 6.28 eV.
Aluminum nitride (AlN) which is (RT) is formed by sputtering.

Next, it is attached to the transfer body 412 with an adhesive layer 411 such as an epoxy resin.
In this embodiment, the transfer body 412 is a plastic film substrate to reduce the weight.

In this way, a flexible liquid crystal module is completed. In this liquid crystal module, heat generated by the elements 404a to 404c is diffused by the film 415 having thermal conductivity, and deterioration of the elements can be prevented. In addition, the heat-conductive film 415 can prevent the transfer body from being deformed or deteriorated by heat. And if necessary, the flexible substrate 412
Alternatively, the counter substrate is divided into a desired shape. Furthermore, a polarizing plate (not shown) or the like was appropriately provided using a known technique. Then, an FPC (not shown) is pasted using a known technique.
In addition, when the counter substrate as a support is bonded and then peeled off, the portion of the wiring lead-out terminal (connection portion) becomes only the peeled layer, and the mechanical strength is weakened. Therefore, the FPC is attached to the peeled layer before peeling. It is desirable to fix it with an organic resin.

In the fifth embodiment, an example of a reflective display device in which the pixel electrode is formed of a reflective metal material is shown. However, in this embodiment, the pixel electrode is formed of a light-transmitting conductive film and a reflective metal. An example of a transflective display device formed with both materials is shown in FIG.

The steps up to the step of forming an interlayer insulating film covering the TFT are the same as those in the fifth embodiment, and are omitted here. One of the electrodes in contact with the source region or the drain region of the TFT in the pixel portion is formed using a reflective metal material, and the pixel electrode (reflecting portion) 502 is formed. Next, a pixel electrode (transmission portion) 501 made of a light-transmitting conductive film is formed so as to partially overlap with the pixel electrode (reflection portion) 502. As the light-transmitting conductive film, ITO (indium tin oxide alloy), indium zinc oxide alloy (In ₂ O ₃ —ZnO), zinc oxide (ZnO), or the like may be used.

An active matrix substrate is formed as described above. Using this active matrix substrate, after peeling the substrate according to the embodiment, a film 507 having thermal conductivity is formed, and a plastic substrate is bonded with an adhesive, and a liquid crystal module is manufactured according to Example 5. Then, a backlight 504 and a light guide plate 505 are provided on the obtained liquid crystal module,
When covered with the cover 506, an active matrix liquid crystal display device as shown in a part of the sectional view in FIG. 12 is completed. Note that the cover and the liquid crystal module are bonded together using an adhesive or an organic resin. In addition, when the plastic substrate and the counter substrate are bonded to each other, the organic resin may be filled between the frame and the substrate by being surrounded by a frame and bonded. In addition, the polarizing plate 503 is a transflective type.
Is attached to both the plastic substrate and the counter substrate.

When the outside light is sufficient, the liquid crystal between the counter electrode provided on the counter substrate and the pixel electrode (reflecting portion) 502 is controlled with the backlight turned off in order to drive as a reflection type. If the external light is insufficient, display is performed by controlling the liquid crystal between the counter electrode provided on the counter substrate and the pixel electrode (transmission portion) 501 with the backlight turned on. I do.

However, when the liquid crystal to be used is a TN liquid crystal or an STN liquid crystal, the twist angle of the liquid crystal changes between the reflective type and the transmissive type, so it is necessary to optimize the polarizing plate and the retardation plate. For example, an optical rotation compensation mechanism (for example, a polarizing plate using a polymer liquid crystal) that adjusts the amount of twist angle of the liquid crystal is separately required.

By implementing the present invention, various modules (active matrix liquid crystal module, active matrix EL module, active matrix EC module) can be completed. That is, by implementing the present invention, all electronic devices incorporating them are completed.

Such electronic devices include video cameras, digital cameras, head mounted displays (goggles type displays), car navigation systems, projectors, car stereos,
A personal computer, a portable information terminal (such as a mobile computer, a mobile phone, or an electronic book) can be used. Examples of these are shown in FIGS.

FIG. 13A illustrates a personal computer, which includes a main body 2001, an image input portion 2002, a display portion 2003, a keyboard 2004, and the like.

FIG. 13B illustrates a video camera, which includes a main body 2101, a display portion 2102, and an audio input portion 210.
3, an operation switch 2104, a battery 2105, an image receiving unit 2106, and the like.

FIG. 13C shows a mobile computer (mobile computer).
A camera unit 2202, an image receiving unit 2203, an operation switch 2204, a display unit 2205, and the like are included.

FIG. 13D shows a goggle type display, which includes a main body 2301, a display portion 2302, an arm portion 2303, and the like.

FIG. 13E shows a player using a recording medium (hereinafter referred to as a recording medium) in which a program is recorded. The main body 2401, a display portion 2402, a speaker portion 2403, a recording medium 2404,
Operation switch 2405 and the like are included. This player uses DVD (Dig as a recording medium).
(tial Versatile Disc), CD, etc. can be used for music appreciation, movie appreciation, games and the Internet.

FIG. 13F illustrates a digital camera, which includes a main body 2501, a display portion 2502, and an eyepiece portion 250.
3, an operation switch 2504, an image receiving unit (not shown), and the like.

FIG. 14A shows a mobile phone, which includes a main body 2901, an audio output unit 2902, and an audio input unit 29.
03, display unit 2904, operation switch 2905, antenna 2906, image input unit (CCD
2907 and the like.

FIG. 14B illustrates a portable book (electronic book), which includes a main body 3001 and display portions 3002 and 300.
3, a storage medium 3004, an operation switch 3005, an antenna 3006, and the like.

FIG. 14C illustrates a display, which includes a main body 3101, a support base 3102, and a display portion 3103.
Etc.

Incidentally, the display shown in FIG. 14C is a medium or small size display, for example, 5-20.
Inch screen size. Further, in order to form a display portion having such a size, it is preferable to use a substrate having a side of 1 m and perform mass production by performing multiple chamfering.

As described above, the applicable range of the present invention is so wide that the present invention can be applied to methods for manufacturing electronic devices in various fields. Moreover, the electronic device of a present Example is realizable even if it uses the structure which consists of what combination of Examples 1-6.

Claims (12)

A method for manufacturing a flexible light-emitting device,
Forming a release layer on the substrate,
Forming an oxide layer on the release layer;
Forming a layer including a light-emitting element over the oxide layer;
After bonding a flexible support to the layer containing the element, the layer to be peeled including the layer containing the element is peeled off and peeled off from the substrate, and transferred to the support.
A method for manufacturing a light-emitting device, wherein a thin film is formed on a peeled surface below the peeled layer after the transfer. A method for manufacturing a flexible light-emitting device,
Forming a release layer on the substrate,
Forming an oxide layer on the release layer;
Forming a layer including a light-emitting element over the oxide layer;
After bonding a flexible support to the layer containing the element, the layer to be peeled including the layer containing the element is peeled off and peeled off from the substrate, and transferred to the support.
Form a thin film on the peeled surface below the peeled layer after the transfer,
A method for manufacturing a light-emitting device, wherein a flexible transfer body is bonded to the thin film, and a layer including the element is sandwiched between the support and the transfer body. In claim 1 or claim 2,
Each of the thin films is formed of a single layer or a stacked layer of aluminum nitride, aluminum oxide, aluminum nitride oxide, aluminum oxynitride, or beryllium oxide. In any one of Claim 1 thru | or 3,
The method for manufacturing a light-emitting device, wherein the thin film is formed by a sputtering method. A method for manufacturing a flexible light-emitting device,
Forming a release layer on the substrate,
Forming an oxide layer on the release layer;
Forming a layer including a light-emitting element over the oxide layer;
Forming a first thin film on the layer containing the element;
After bonding a flexible support to the first thin film, the layer to be peeled including the element-containing layer is peeled off and peeled off from the substrate, and transferred to the support.
A method for manufacturing a light-emitting device, wherein a second thin film is formed on a peeled surface below the peeled layer after the transfer. A method for manufacturing a flexible light-emitting device,
Forming a release layer on the substrate,
Forming an oxide layer on the release layer;
Forming a layer including a light-emitting element over the oxide layer;
Forming a first thin film on the layer containing the element;
After bonding a flexible support to the first thin film, the layer to be peeled including the element-containing layer is peeled off and peeled off from the substrate, and transferred to the support.
Forming a second thin film on the peeled surface below the peeled layer after the transfer,
A method for manufacturing a light-emitting device, wherein a flexible transfer body is bonded to the second thin film, and a layer including the element is sandwiched between the support and the transfer body. In claim 5 or claim 6,
The method for manufacturing a light-emitting device, wherein each of the first thin film and the second thin film includes a single layer or a stacked layer of aluminum nitride, aluminum oxide, aluminum nitride oxide, aluminum oxynitride, or beryllium oxide. In any one of Claims 5 thru | or 7,
The method for manufacturing a light-emitting device, wherein the second thin film is formed by a sputtering method. In any one of Claims 1 thru | or 8,
The method for manufacturing a light-emitting device, wherein the release layer is tungsten. In any one of Claims 1 thru | or 9,
The method for manufacturing a light-emitting device is characterized in that the layer including the light-emitting element includes a transistor. In any one of Claims 1 thru | or 10,
The method for manufacturing a light-emitting device, wherein the support and the transfer body include plastic. A layer including a transistor and a light-emitting element over the oxide layer;
A film having first thermal conductivity on the layer including the transistor and the light emitting element;
A flexible first substrate on the first thermally conductive film;
Having a second thermally conductive film formed on the peeled surface under the oxide layer;
A light emitting device comprising: a flexible second substrate under the second thermal conductive film.

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