JP5389640B2 - プラズマリアクタ - Google Patents
プラズマリアクタ Download PDFInfo
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- JP5389640B2 JP5389640B2 JP2009509698A JP2009509698A JP5389640B2 JP 5389640 B2 JP5389640 B2 JP 5389640B2 JP 2009509698 A JP2009509698 A JP 2009509698A JP 2009509698 A JP2009509698 A JP 2009509698A JP 5389640 B2 JP5389640 B2 JP 5389640B2
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- 238000000034 method Methods 0.000 claims description 29
- 230000008569 process Effects 0.000 claims description 22
- 238000012545 processing Methods 0.000 claims description 20
- 238000002347 injection Methods 0.000 claims description 4
- 239000007924 injection Substances 0.000 claims description 4
- 238000009826 distribution Methods 0.000 description 54
- 238000005530 etching Methods 0.000 description 16
- 238000009828 non-uniform distribution Methods 0.000 description 10
- 238000013519 translation Methods 0.000 description 7
- 230000000694 effects Effects 0.000 description 6
- 239000004020 conductor Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000009827 uniform distribution Methods 0.000 description 2
- 238000004804 winding Methods 0.000 description 2
- 230000008901 benefit Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 238000010494 dissociation reaction Methods 0.000 description 1
- 230000005593 dissociations Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000010849 ion bombardment Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000012811 non-conductive material Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
- Plasma Technology (AREA)
- Chemical Vapour Deposition (AREA)
Description
Claims (8)
- 被加工物を処理するプラズマリアクタであって、
上壁を含んでおり、且つ前記上壁にほぼ垂直である対称軸線を有するエンクロージャと、前記チャンバの内側であり且つ前記上壁とほぼ向かい合っている被加工物支持台と、前記チャンバに結合されているプロセスガス注入装置と、前記チャンバに結合されている真空ポンプと、を備えている、プロセスチャンバと、
前記上壁の上に存在しているプラズマ源出力印加器であって、半径方向内側の印加器部分及び半径方向外側の印加器部分と、前記内側印加器部分及び外側印加器部分に結合されているRF電力装置と、を備えている、前記プラズマ源出力印加器と、
少なくとも前記外側印加器部分を支持している傾斜装置であって、少なくとも前記外側印加器部分を前記対称軸線に垂直な半径方向軸線を中心に傾けることができ、且つ、少なくとも前記外側印加器部分を前記対称軸線を中心に回転させることができる、前記傾斜装置と、
前記内側部分及び前記外側部分の位置を互いに対して前記対称軸線に沿って変更する上昇装置を含み、前記傾斜装置が、
前記上壁の上に存在しているリングであって、傾斜面に沿って互いに分かれている一対のリングに分割されており、上側リング及び下側リングを備えている、前記リングと、
前記上側リング及び前記下側リングのうちの少なくとも一方を回転させるように結合されているリング回転アクチュエータとを備えているプラズマリアクタ。 - 前記リング回転アクチュエータが、
前記上側リングを前記対称軸線を中心に回転させる第1のリング回転アクチュエータと、前記下側リングを、前記上側リングの前記回転とは独立して前記対称軸線を中心に回転させる第2のリング回転アクチュエータとを備えている請求項1記載のリアクタ。 - 前記上昇装置は前記内側印加器部分を前記対称軸線に沿って上昇及び下降させるリフトアクチュエータを含み、
前記リアクタは、(a)前記リフトアクチュエータと、(b)前記第1のリング回転アクチュエータ及び前記第2のリング回転アクチュエータと、(c)前記RF電力装置と、
を制御する制御プロセッサとを更に備えている請求項2記載のリアクタ。 - 前記RF電力装置が、前記内側印加器部分及び前記外側印加器部分のそれぞれに結合されている独立して制御可能なRF電力出力、を備えており、
前記内側印加器部分及び前記外側印加器部分に供給されるRF電力の相対的な量を変更するように、制御プロセッサをプログラムすることができる請求項3記載のリアクタ。 - 前記プラズマ源出力印加器が、前記内側印加器部分と前記外側印加器部分との間の中間印加器部分、を更に備えており、
前記RF電力装置が、前記中間出力印加器部分に結合されている更なる独立したRF電力出力、を更に備えている請求項1記載のリアクタ。 - 前記中間印加器部分が、前記外側印加器部分と一緒に傾けることができるように前記上側回転リングに連結されている請求項5記載のリアクタ。
- 前記傾斜装置が、前記内側印加器部分及び前記外側印加器部分の両方を支持しており、
これにより、前記内側印加器部分及び前記外側印加器部分の両方を前記傾斜装置によって一緒に傾けることができる請求項1記載のリアクタ。 - 前記被加工物支持台を支持している第2の傾斜装置であって、前記被加工物支持台を半径方向軸線を中心に回転させることができ、且つ、前記被加工物支持台を前記対称軸線を中心に回転させることができる、前記第2の傾斜装置を更に備えている請求項1記載のリアクタ。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/416,801 | 2006-05-03 | ||
US11/416,801 US7504041B2 (en) | 2006-05-03 | 2006-05-03 | Method of processing a workpiece in a plasma reactor employing a dynamically adjustable plasma source power applicator |
PCT/US2007/010686 WO2007130489A2 (en) | 2006-05-03 | 2007-05-02 | Plasma reactor with a dynamically adjustable plasma source power applicator |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2013144407A Division JP2013239727A (ja) | 2006-05-03 | 2013-07-10 | 動的に調整可能なプラズマ源出力印加器を備えたプラズマリアクタ |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2009535852A JP2009535852A (ja) | 2009-10-01 |
JP2009535852A5 JP2009535852A5 (ja) | 2010-07-01 |
JP5389640B2 true JP5389640B2 (ja) | 2014-01-15 |
Family
ID=38660275
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009509698A Active JP5389640B2 (ja) | 2006-05-03 | 2007-05-02 | プラズマリアクタ |
JP2013144407A Pending JP2013239727A (ja) | 2006-05-03 | 2013-07-10 | 動的に調整可能なプラズマ源出力印加器を備えたプラズマリアクタ |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2013144407A Pending JP2013239727A (ja) | 2006-05-03 | 2013-07-10 | 動的に調整可能なプラズマ源出力印加器を備えたプラズマリアクタ |
Country Status (6)
Country | Link |
---|---|
US (1) | US7504041B2 (ja) |
EP (1) | EP2027306B1 (ja) |
JP (2) | JP5389640B2 (ja) |
KR (2) | KR101501603B1 (ja) |
TW (1) | TWI376429B (ja) |
WO (1) | WO2007130489A2 (ja) |
Families Citing this family (19)
Publication number | Priority date | Publication date | Assignee | Title |
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US7419551B2 (en) * | 2006-05-03 | 2008-09-02 | Applied Materials, Inc. | Plasma reactor with apparatus for dynamically adjusting the plasma source power applicator and the workpiece relative to one another |
US7431797B2 (en) * | 2006-05-03 | 2008-10-07 | Applied Materials, Inc. | Plasma reactor with a dynamically adjustable plasma source power applicator |
US7504041B2 (en) | 2006-05-03 | 2009-03-17 | Applied Materials, Inc. | Method of processing a workpiece in a plasma reactor employing a dynamically adjustable plasma source power applicator |
US8223470B2 (en) * | 2006-10-10 | 2012-07-17 | Taiwan Semiconductor Manufacturing Company, Ltd. | Apparatus and method to improve uniformity and reduce local effect of process chamber |
US8999106B2 (en) * | 2007-12-19 | 2015-04-07 | Applied Materials, Inc. | Apparatus and method for controlling edge performance in an inductively coupled plasma chamber |
US8062472B2 (en) * | 2007-12-19 | 2011-11-22 | Applied Materials, Inc. | Method of correcting baseline skew by a novel motorized source coil assembly |
US8137463B2 (en) * | 2007-12-19 | 2012-03-20 | Applied Materials, Inc. | Dual zone gas injection nozzle |
US20090162570A1 (en) * | 2007-12-19 | 2009-06-25 | Applied Materials, Inc. | Apparatus and method for processing a substrate using inductively coupled plasma technology |
JP5231308B2 (ja) * | 2009-03-31 | 2013-07-10 | 東京エレクトロン株式会社 | プラズマ処理装置 |
US8414736B2 (en) * | 2009-09-03 | 2013-04-09 | Applied Materials, Inc. | Plasma reactor with tiltable overhead RF inductive source |
KR101479143B1 (ko) | 2010-11-30 | 2015-01-05 | 캐논 아네르바 가부시키가이샤 | 플라즈마 처리 장치 |
KR101256962B1 (ko) | 2011-05-31 | 2013-04-26 | 세메스 주식회사 | 안테나 유닛 및 상기 유닛을 포함하는 기판 처리 장치, 그리고 상기 장치를 이용한 기판 처리 방법 |
JP5712889B2 (ja) * | 2011-10-07 | 2015-05-07 | 東京エレクトロン株式会社 | 成膜装置及び基板処理装置 |
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CN111769032B (zh) * | 2019-04-01 | 2024-02-27 | 北京北方华创微电子装备有限公司 | 射频线圈、工艺腔室和半导体处理设备 |
JP6909824B2 (ja) | 2019-05-17 | 2021-07-28 | 株式会社Kokusai Electric | 基板処理装置、半導体装置の製造方法及びプログラム |
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US7520999B2 (en) * | 2006-05-03 | 2009-04-21 | Applied Materials, Inc. | Method of processing a workpiece in a plasma reactor with dynamic adjustment of the plasma source power applicator and the workpiece relative to one another |
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-
2006
- 2006-05-03 US US11/416,801 patent/US7504041B2/en active Active
-
2007
- 2007-05-02 KR KR1020077027950A patent/KR101501603B1/ko active IP Right Grant
- 2007-05-02 WO PCT/US2007/010686 patent/WO2007130489A2/en active Application Filing
- 2007-05-02 KR KR1020147030949A patent/KR101564550B1/ko active IP Right Grant
- 2007-05-02 JP JP2009509698A patent/JP5389640B2/ja active Active
- 2007-05-02 EP EP07776653.3A patent/EP2027306B1/en active Active
- 2007-05-03 TW TW096115772A patent/TWI376429B/zh active
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2013
- 2013-07-10 JP JP2013144407A patent/JP2013239727A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
EP2027306A2 (en) | 2009-02-25 |
KR20090012289A (ko) | 2009-02-03 |
JP2013239727A (ja) | 2013-11-28 |
TW200817532A (en) | 2008-04-16 |
JP2009535852A (ja) | 2009-10-01 |
US7504041B2 (en) | 2009-03-17 |
WO2007130489A3 (en) | 2008-01-03 |
TWI376429B (en) | 2012-11-11 |
KR101564550B1 (ko) | 2015-11-02 |
KR20140136064A (ko) | 2014-11-27 |
EP2027306A4 (en) | 2010-10-20 |
KR101501603B1 (ko) | 2015-03-18 |
EP2027306B1 (en) | 2017-08-02 |
WO2007130489A2 (en) | 2007-11-15 |
US20070257009A1 (en) | 2007-11-08 |
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