JP5383399B2 - 管理装置、露光方法及びデバイス製造方法 - Google Patents

管理装置、露光方法及びデバイス製造方法 Download PDF

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Publication number
JP5383399B2
JP5383399B2 JP2009212513A JP2009212513A JP5383399B2 JP 5383399 B2 JP5383399 B2 JP 5383399B2 JP 2009212513 A JP2009212513 A JP 2009212513A JP 2009212513 A JP2009212513 A JP 2009212513A JP 5383399 B2 JP5383399 B2 JP 5383399B2
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Japan
Prior art keywords
exposure
processing
lot
lots
aberration
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Expired - Fee Related
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JP2009212513A
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English (en)
Japanese (ja)
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JP2011061163A (ja
JP2011061163A5 (enExample
Inventor
恒雄 神田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2009212513A priority Critical patent/JP5383399B2/ja
Priority to TW099128097A priority patent/TW201109863A/zh
Priority to KR1020100086960A priority patent/KR20110029082A/ko
Priority to US12/880,727 priority patent/US8428763B2/en
Publication of JP2011061163A publication Critical patent/JP2011061163A/ja
Publication of JP2011061163A5 publication Critical patent/JP2011061163A5/ja
Application granted granted Critical
Publication of JP5383399B2 publication Critical patent/JP5383399B2/ja
Expired - Fee Related legal-status Critical Current
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03B—APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FOR PROJECTING OR VIEWING THEM; APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ACCESSORIES THEREFOR
    • G03B27/00—Photographic printing apparatus
    • G03B27/32—Projection printing apparatus, e.g. enlarger, copying camera
    • G03B27/42—Projection printing apparatus, e.g. enlarger, copying camera for automatic sequential copying of the same original
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/70525—Controlling normal operating mode, e.g. matching different apparatus, remote control or prediction of failure
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70608—Monitoring the unpatterned workpiece, e.g. measuring thickness, reflectivity or effects of immersion liquid on resist
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70653—Metrology techniques
    • G03F7/70666—Aerial image, i.e. measuring the image of the patterned exposure light at the image plane of the projection system
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7085—Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP2009212513A 2009-09-14 2009-09-14 管理装置、露光方法及びデバイス製造方法 Expired - Fee Related JP5383399B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2009212513A JP5383399B2 (ja) 2009-09-14 2009-09-14 管理装置、露光方法及びデバイス製造方法
TW099128097A TW201109863A (en) 2009-09-14 2010-08-23 Management apparatus, exposure method, and method of manufacturing device
KR1020100086960A KR20110029082A (ko) 2009-09-14 2010-09-06 관리 장치, 노광 방법 및 디바이스 제조 방법
US12/880,727 US8428763B2 (en) 2009-09-14 2010-09-13 Management apparatus, exposure method, and method of manufacturing device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009212513A JP5383399B2 (ja) 2009-09-14 2009-09-14 管理装置、露光方法及びデバイス製造方法

Publications (3)

Publication Number Publication Date
JP2011061163A JP2011061163A (ja) 2011-03-24
JP2011061163A5 JP2011061163A5 (enExample) 2012-10-25
JP5383399B2 true JP5383399B2 (ja) 2014-01-08

Family

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JP2009212513A Expired - Fee Related JP5383399B2 (ja) 2009-09-14 2009-09-14 管理装置、露光方法及びデバイス製造方法

Country Status (4)

Country Link
US (1) US8428763B2 (enExample)
JP (1) JP5383399B2 (enExample)
KR (1) KR20110029082A (enExample)
TW (1) TW201109863A (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL2010262A (en) 2012-03-07 2013-09-10 Asml Netherlands Bv Lithographic method and apparatus.
JP2014143306A (ja) 2013-01-24 2014-08-07 Canon Inc 露光方法、露光装置、それを用いたデバイスの製造方法
JP2015167168A (ja) * 2014-03-03 2015-09-24 キヤノン株式会社 決定方法、露光装置、露光システム、物品の製造方法、およびプログラム
JP6324246B2 (ja) * 2014-07-11 2018-05-16 キヤノン株式会社 リソグラフィ装置、および物品製造方法
WO2017198478A1 (en) * 2016-05-19 2017-11-23 Asml Netherlands B.V. Method of sequencing lots for a lithographic apparatus
JP2023157300A (ja) * 2022-04-14 2023-10-26 キヤノン株式会社 露光装置、露光方法、および物品製造方法
CN114740692B (zh) * 2022-04-25 2025-08-01 华虹半导体(无锡)有限公司 曝光批次的控制方法和系统

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2550579B2 (ja) * 1987-05-25 1996-11-06 株式会社ニコン 投影露光装置及び投影露光方法
JPH0413548A (ja) 1990-04-28 1992-01-17 Mitsubishi Electric Corp 生産管理方法及び装置
JP3218478B2 (ja) * 1992-09-04 2001-10-15 株式会社ニコン 投影露光装置及び方法
WO1999031716A1 (en) * 1997-12-16 1999-06-24 Nikon Corporation Aligner, exposure method and method of manufacturing device
JP2001267209A (ja) * 2000-03-15 2001-09-28 Canon Inc 露光処理システム
JP2002190443A (ja) * 2000-12-20 2002-07-05 Hitachi Ltd 露光方法およびその露光システム
US6880135B2 (en) * 2001-11-07 2005-04-12 Synopsys, Inc. Method of incorporating lens aberration information into various process flows
JP3833209B2 (ja) * 2003-10-24 2006-10-11 キヤノン株式会社 露光装置及びデバイス製造方法
JP2006073584A (ja) * 2004-08-31 2006-03-16 Nikon Corp 露光装置及び方法並びにデバイス製造方法
JP2006108474A (ja) * 2004-10-07 2006-04-20 Canon Inc 露光装置及びそれを用いたデバイス製造方法
US7262831B2 (en) * 2004-12-01 2007-08-28 Asml Netherlands B.V. Lithographic projection apparatus and device manufacturing method using such lithographic projection apparatus
JP4984038B2 (ja) * 2006-07-27 2012-07-25 株式会社ニコン 管理方法

Also Published As

Publication number Publication date
JP2011061163A (ja) 2011-03-24
US20110063593A1 (en) 2011-03-17
TW201109863A (en) 2011-03-16
KR20110029082A (ko) 2011-03-22
US8428763B2 (en) 2013-04-23

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