TW201109863A - Management apparatus, exposure method, and method of manufacturing device - Google Patents
Management apparatus, exposure method, and method of manufacturing device Download PDFInfo
- Publication number
- TW201109863A TW201109863A TW099128097A TW99128097A TW201109863A TW 201109863 A TW201109863 A TW 201109863A TW 099128097 A TW099128097 A TW 099128097A TW 99128097 A TW99128097 A TW 99128097A TW 201109863 A TW201109863 A TW 201109863A
- Authority
- TW
- Taiwan
- Prior art keywords
- exposure
- segments
- exposure process
- segment
- projection optical
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 103
- 238000004519 manufacturing process Methods 0.000 title claims description 18
- 230000008569 process Effects 0.000 claims abstract description 81
- 230000004075 alteration Effects 0.000 claims abstract description 65
- 238000012545 processing Methods 0.000 claims abstract description 62
- 230000003287 optical effect Effects 0.000 claims abstract description 59
- 239000000758 substrate Substances 0.000 claims description 21
- 230000000717 retained effect Effects 0.000 claims description 11
- 238000004364 calculation method Methods 0.000 claims description 2
- 235000012431 wafers Nutrition 0.000 description 21
- 239000004065 semiconductor Substances 0.000 description 8
- 230000008859 change Effects 0.000 description 7
- 238000011156 evaluation Methods 0.000 description 7
- 230000011218 segmentation Effects 0.000 description 7
- 238000009826 distribution Methods 0.000 description 4
- 238000005286 illumination Methods 0.000 description 4
- 238000003384 imaging method Methods 0.000 description 4
- 238000003860 storage Methods 0.000 description 4
- PMYDPQQPEAYXKD-UHFFFAOYSA-N 3-hydroxy-n-naphthalen-2-ylnaphthalene-2-carboxamide Chemical compound C1=CC=CC2=CC(NC(=O)C3=CC4=CC=CC=C4C=C3O)=CC=C21 PMYDPQQPEAYXKD-UHFFFAOYSA-N 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 230000007704 transition Effects 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000012937 correction Methods 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 238000007493 shaping process Methods 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 238000000576 coating method Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000013041 optical simulation Methods 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 210000001747 pupil Anatomy 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 239000011265 semifinished product Substances 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03B—APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FOR PROJECTING OR VIEWING THEM; APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ACCESSORIES THEREFOR
- G03B27/00—Photographic printing apparatus
- G03B27/32—Projection printing apparatus, e.g. enlarger, copying camera
- G03B27/42—Projection printing apparatus, e.g. enlarger, copying camera for automatic sequential copying of the same original
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
- G03F7/70525—Controlling normal operating mode, e.g. matching different apparatus, remote control or prediction of failure
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70608—Monitoring the unpatterned workpiece, e.g. measuring thickness, reflectivity or effects of immersion liquid on resist
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70653—Metrology techniques
- G03F7/70666—Aerial image, i.e. measuring the image of the patterned exposure light at the image plane of the projection system
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/7085—Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Health & Medical Sciences (AREA)
- Environmental & Geological Engineering (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2009212513A JP5383399B2 (ja) | 2009-09-14 | 2009-09-14 | 管理装置、露光方法及びデバイス製造方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW201109863A true TW201109863A (en) | 2011-03-16 |
Family
ID=43730231
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW099128097A TW201109863A (en) | 2009-09-14 | 2010-08-23 | Management apparatus, exposure method, and method of manufacturing device |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US8428763B2 (enExample) |
| JP (1) | JP5383399B2 (enExample) |
| KR (1) | KR20110029082A (enExample) |
| TW (1) | TW201109863A (enExample) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL2010262A (en) * | 2012-03-07 | 2013-09-10 | Asml Netherlands Bv | Lithographic method and apparatus. |
| JP2014143306A (ja) | 2013-01-24 | 2014-08-07 | Canon Inc | 露光方法、露光装置、それを用いたデバイスの製造方法 |
| JP2015167168A (ja) * | 2014-03-03 | 2015-09-24 | キヤノン株式会社 | 決定方法、露光装置、露光システム、物品の製造方法、およびプログラム |
| JP6324246B2 (ja) * | 2014-07-11 | 2018-05-16 | キヤノン株式会社 | リソグラフィ装置、および物品製造方法 |
| US10281825B2 (en) * | 2016-05-19 | 2019-05-07 | Asml Netherlands B.V. | Method of sequencing lots for a lithographic apparatus |
| JP2023157300A (ja) * | 2022-04-14 | 2023-10-26 | キヤノン株式会社 | 露光装置、露光方法、および物品製造方法 |
| CN114740692B (zh) * | 2022-04-25 | 2025-08-01 | 华虹半导体(无锡)有限公司 | 曝光批次的控制方法和系统 |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2550579B2 (ja) * | 1987-05-25 | 1996-11-06 | 株式会社ニコン | 投影露光装置及び投影露光方法 |
| JPH0413548A (ja) | 1990-04-28 | 1992-01-17 | Mitsubishi Electric Corp | 生産管理方法及び装置 |
| JP3218478B2 (ja) * | 1992-09-04 | 2001-10-15 | 株式会社ニコン | 投影露光装置及び方法 |
| AU1504799A (en) * | 1997-12-16 | 1999-07-05 | Nikon Corporation | Aligner, exposure method and method of manufacturing device |
| JP2001267209A (ja) * | 2000-03-15 | 2001-09-28 | Canon Inc | 露光処理システム |
| JP2002190443A (ja) * | 2000-12-20 | 2002-07-05 | Hitachi Ltd | 露光方法およびその露光システム |
| US6880135B2 (en) * | 2001-11-07 | 2005-04-12 | Synopsys, Inc. | Method of incorporating lens aberration information into various process flows |
| JP3833209B2 (ja) * | 2003-10-24 | 2006-10-11 | キヤノン株式会社 | 露光装置及びデバイス製造方法 |
| JP2006073584A (ja) * | 2004-08-31 | 2006-03-16 | Nikon Corp | 露光装置及び方法並びにデバイス製造方法 |
| JP2006108474A (ja) * | 2004-10-07 | 2006-04-20 | Canon Inc | 露光装置及びそれを用いたデバイス製造方法 |
| US7262831B2 (en) * | 2004-12-01 | 2007-08-28 | Asml Netherlands B.V. | Lithographic projection apparatus and device manufacturing method using such lithographic projection apparatus |
| JP4984038B2 (ja) * | 2006-07-27 | 2012-07-25 | 株式会社ニコン | 管理方法 |
-
2009
- 2009-09-14 JP JP2009212513A patent/JP5383399B2/ja not_active Expired - Fee Related
-
2010
- 2010-08-23 TW TW099128097A patent/TW201109863A/zh unknown
- 2010-09-06 KR KR1020100086960A patent/KR20110029082A/ko not_active Ceased
- 2010-09-13 US US12/880,727 patent/US8428763B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| US20110063593A1 (en) | 2011-03-17 |
| KR20110029082A (ko) | 2011-03-22 |
| JP5383399B2 (ja) | 2014-01-08 |
| US8428763B2 (en) | 2013-04-23 |
| JP2011061163A (ja) | 2011-03-24 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TW201109863A (en) | Management apparatus, exposure method, and method of manufacturing device | |
| US10566252B2 (en) | Overlay-correction method and a control system using the same | |
| US9599888B2 (en) | Reflective lithography masks and systems and methods | |
| US11640119B2 (en) | Exposure method, exposure apparatus, article manufacturing method, and method of manufacturing semiconductor device | |
| CN100590533C (zh) | 检测梯度滤波器光强分布的方法及提高线宽一致性的方法 | |
| JP7022531B2 (ja) | 露光方法、露光装置、および物品の製造方法 | |
| CN101349872A (zh) | 光刻曝光装置、系统和光刻图形化方法 | |
| TWI528416B (zh) | 用於已曝光基板的自動重工之微影群組、方法及控制單元 | |
| KR20220053492A (ko) | 처리 장치, 계측 장치, 리소그래피 장치, 물품을 제조하는 방법, 모델, 처리 방법, 계측 방법, 생성 방법, 및 생성 장치 | |
| US9733567B2 (en) | Reticle transmittance measurement method, and projection exposure method using the same | |
| JP2006108474A (ja) | 露光装置及びそれを用いたデバイス製造方法 | |
| US11016399B2 (en) | Method for controlling a manufacturing apparatus and associated apparatuses | |
| US11543755B2 (en) | Method of manufacturing semiconductor device | |
| TW201337473A (zh) | 微影裝置及元件製造方法 | |
| JP2022068832A (ja) | 処理装置、計測装置、リソグラフィ装置、物品製造方法、モデル、処理方法、計測方法、生成方法、およびコンピュータ | |
| TW202405581A (zh) | 用於去耦合與半導體製造相關之變異來源之方法 | |
| JP2022149848A (ja) | 計測装置、リソグラフィ装置、および物品製造方法 | |
| US7161660B2 (en) | Photolithography system and method of monitoring the same | |
| US9575413B2 (en) | Exposure apparatus, exposure method, and device manufacturing method | |
| JP6071263B2 (ja) | 露光装置、露光システム、それらを用いたデバイスの製造方法 | |
| KR100791680B1 (ko) | 스테퍼의 노광 방법 | |
| US7537871B2 (en) | Method of manufacturing semiconductor device | |
| JP2023157300A (ja) | 露光装置、露光方法、および物品製造方法 | |
| US8558986B2 (en) | Exposure apparatus and device manufacturing method | |
| KR101096671B1 (ko) | 노광 장비용 왯지 렌즈 제조방법 |