JP5377061B2 - 光電変換装置 - Google Patents

光電変換装置 Download PDF

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Publication number
JP5377061B2
JP5377061B2 JP2009108991A JP2009108991A JP5377061B2 JP 5377061 B2 JP5377061 B2 JP 5377061B2 JP 2009108991 A JP2009108991 A JP 2009108991A JP 2009108991 A JP2009108991 A JP 2009108991A JP 5377061 B2 JP5377061 B2 JP 5377061B2
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Japan
Prior art keywords
semiconductor layer
semiconductor
layer
crystal
photoelectric conversion
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Expired - Fee Related
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JP2009108991A
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English (en)
Japanese (ja)
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JP2009295970A5 (enExample
JP2009295970A (ja
Inventor
舜平 山崎
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2009108991A priority Critical patent/JP5377061B2/ja
Publication of JP2009295970A publication Critical patent/JP2009295970A/ja
Publication of JP2009295970A5 publication Critical patent/JP2009295970A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H10F77/148—Shapes of potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/20—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising photovoltaic cells in arrays in or on a single semiconductor substrate, the photovoltaic cells having planar junctions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02529—Silicon carbide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02587—Structure
    • H01L21/0259—Microstructure
    • H01L21/02595—Microstructure polycrystalline
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

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  • Photovoltaic Devices (AREA)
  • Chemical Vapour Deposition (AREA)
JP2009108991A 2008-05-09 2009-04-28 光電変換装置 Expired - Fee Related JP5377061B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2009108991A JP5377061B2 (ja) 2008-05-09 2009-04-28 光電変換装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2008123332 2008-05-09
JP2008123332 2008-05-09
JP2009108991A JP5377061B2 (ja) 2008-05-09 2009-04-28 光電変換装置

Publications (3)

Publication Number Publication Date
JP2009295970A JP2009295970A (ja) 2009-12-17
JP2009295970A5 JP2009295970A5 (enExample) 2012-05-17
JP5377061B2 true JP5377061B2 (ja) 2013-12-25

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009108991A Expired - Fee Related JP5377061B2 (ja) 2008-05-09 2009-04-28 光電変換装置

Country Status (2)

Country Link
US (1) US8410354B2 (enExample)
JP (1) JP5377061B2 (enExample)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7888167B2 (en) * 2008-04-25 2011-02-15 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and method for manufacturing the same
US20090293954A1 (en) * 2008-05-30 2009-12-03 Semiconductor Energy Laboratory Co., Ltd. Photoelectric Conversion Device And Method For Manufacturing The Same
US8344378B2 (en) * 2009-06-26 2013-01-01 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor and method for manufacturing the same
KR101072472B1 (ko) * 2009-07-03 2011-10-11 한국철강 주식회사 광기전력 장치의 제조 방법
CN101958361A (zh) * 2009-07-13 2011-01-26 无锡尚德太阳能电力有限公司 透光薄膜太阳电池组件刻蚀方法
US8704083B2 (en) * 2010-02-11 2014-04-22 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and fabrication method thereof
US9076909B2 (en) * 2010-06-18 2015-07-07 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and method for manufacturing the same
WO2011161901A1 (ja) * 2010-06-25 2011-12-29 パナソニック株式会社 多結晶シリコン薄膜の形成方法、多結晶シリコン薄膜基板、シリコン薄膜太陽電池及びシリコン薄膜トランジスタ装置
JP5666974B2 (ja) * 2011-04-21 2015-02-12 株式会社東芝 半導体材料を用いた太陽電池
WO2013080766A1 (ja) * 2011-11-30 2013-06-06 京セラ株式会社 光電変換装置
US9048099B2 (en) * 2013-05-09 2015-06-02 Applied Materials, Inc. Multi-layer amorphous silicon structure with improved poly-silicon quality after excimer laser anneal
US10854646B2 (en) 2018-10-19 2020-12-01 Attollo Engineering, LLC PIN photodetector

Family Cites Families (24)

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JPS56122123A (en) * 1980-03-03 1981-09-25 Shunpei Yamazaki Semiamorphous semiconductor
JPS6262073A (ja) 1985-09-11 1987-03-18 Ishikawajima Harima Heavy Ind Co Ltd ポペツト弁の温度制御装置
JPH0651909B2 (ja) * 1985-12-28 1994-07-06 キヤノン株式会社 薄膜多層構造の形成方法
JPH0253941A (ja) 1988-08-17 1990-02-22 Tsudakoma Corp 織機の運転装置
US5007971A (en) * 1989-01-21 1991-04-16 Canon Kabushiki Kaisha Pin heterojunction photovoltaic elements with polycrystal BP(H,F) semiconductor film
DE4315959C2 (de) * 1993-05-12 1997-09-11 Max Planck Gesellschaft Verfahren zur Herstellung einer strukturierten Schicht eines Halbleitermaterials sowie einer Dotierungsstruktur in einem Halbleitermaterial unter Einwirkung von Laserstrahlung
US5677236A (en) * 1995-02-24 1997-10-14 Mitsui Toatsu Chemicals, Inc. Process for forming a thin microcrystalline silicon semiconductor film
US6287888B1 (en) * 1997-12-26 2001-09-11 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and process for producing photoelectric conversion device
JP4293385B2 (ja) * 1998-01-27 2009-07-08 株式会社半導体エネルギー研究所 光電変換装置の作製方法
JPH11274527A (ja) * 1998-03-24 1999-10-08 Sanyo Electric Co Ltd 光起電力装置
JP4282797B2 (ja) * 1998-10-08 2009-06-24 株式会社半導体エネルギー研究所 光電変換装置
EP0994515B1 (en) * 1998-10-12 2007-08-22 Kaneka Corporation Method of manufacturing silicon-based thin-film photoelectric conversion device
JP3672750B2 (ja) 1998-10-12 2005-07-20 株式会社カネカ シリコン系薄膜光電変換装置の製造方法
JP3046965B1 (ja) * 1999-02-26 2000-05-29 鐘淵化学工業株式会社 非晶質シリコン系薄膜光電変換装置の製造方法
JP2000277439A (ja) 1999-03-25 2000-10-06 Kanegafuchi Chem Ind Co Ltd 結晶質シリコン系薄膜のプラズマｃｖｄ方法およびシリコン系薄膜光電変換装置の製造方法
JP4488550B2 (ja) * 1999-06-09 2010-06-23 富士電機システムズ株式会社 薄膜太陽電池とその製造方法
JP2005050905A (ja) * 2003-07-30 2005-02-24 Sharp Corp シリコン薄膜太陽電池の製造方法
EP1643564B1 (en) * 2004-09-29 2019-01-16 Panasonic Intellectual Property Management Co., Ltd. Photovoltaic device
US8207010B2 (en) * 2007-06-05 2012-06-26 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing photoelectric conversion device
CN102007586B (zh) * 2008-04-18 2013-09-25 株式会社半导体能源研究所 薄膜晶体管及其制造方法
JP5416460B2 (ja) * 2008-04-18 2014-02-12 株式会社半導体エネルギー研究所 薄膜トランジスタおよび薄膜トランジスタの作製方法
WO2009128553A1 (en) * 2008-04-18 2009-10-22 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor and method for manufacturing the same
US7888167B2 (en) * 2008-04-25 2011-02-15 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and method for manufacturing the same
US20090293954A1 (en) * 2008-05-30 2009-12-03 Semiconductor Energy Laboratory Co., Ltd. Photoelectric Conversion Device And Method For Manufacturing The Same

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Publication number Publication date
US8410354B2 (en) 2013-04-02
US20090277504A1 (en) 2009-11-12
JP2009295970A (ja) 2009-12-17

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