JP5371664B2 - Substrate processing equipment - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a substrate processing apparatus that can transfer a substrate from a first chamber to a second chamber, without using a substrate robot and can perform processing on the substrate by using a processing fluid during the transfer. <P>SOLUTION: Inside the first chamber 1, there are housed two or more first support members 10 for supporting a wafer W in a substantially horizontal attitude by holding its peripheral part. Inside the second chamber 2, there are housed two or more second support members 20 for supporting the wafer W in a substantially horizontal attitude. The first support members 10A to 10D and/or the second support members 20A to 20D are moved in an X direction, while supporting the wafer W and the first support members 10A to 10D and the second support members 20A to 20D are opened and closed, thereby the wafer W is transferred from the first four support members 10A to 10D to the second four support members 20A to 20D. Processing is carried out on the wafer W being transferred by a processing section 3. <P>COPYRIGHT: (C)2011,JPO&amp;INPIT

Description

  The present invention relates to a substrate processing apparatus for performing processing using a processing fluid on a substrate. Examples of substrates to be processed include semiconductor wafers, glass substrates for liquid crystal display devices, substrates for plasma displays, FED (Field Emission Display) substrates, optical disk substrates, magnetic disk substrates, magneto-optical disk substrates, Substrates such as photomask substrates are included.

  A single-wafer type substrate processing apparatus that processes substrates one by one includes, for example, a spin chuck that holds and rotates a substrate in a horizontal position, and a processing liquid (chemical solution or rinsing liquid) with respect to the substrate held by the spin chuck And a treatment liquid nozzle for supplying the liquid. The substrate processing process using such a substrate processing apparatus includes, for example, a chemical processing process, a rinsing process, and a drying process. In the chemical solution processing step, the chemical solution is supplied to the substrate held by the spin chuck. This chemical solution receives a centrifugal force on the rotating substrate and spreads over the entire surface of the substrate. In the rinsing process, a rinsing liquid is supplied to the substrate held by the spin chuck. This rinsing liquid receives a centrifugal force on the rotating substrate and spreads over the entire surface of the substrate. As a result, the chemical liquid on the substrate surface is replaced with the rinse liquid. In the drying process, when the spin chuck is rotated at a high speed, the rinsing liquid on the rotating substrate surface is shaken off by the centrifugal force.

  As a spin chuck, a mechanical chuck that holds a substrate with a plurality of chuck pins is known. The mechanical chuck is configured such that chuck pins are in point contact with the peripheral end surface of the substrate. Since the chuck pin is configured to receive a centrifugal force due to the rotation of the substrate at a contact point between the peripheral end surface of the substrate and the chuck pin, a large stress is concentrated on the contact point. Therefore, a material having a strength capable of withstanding high-speed rotation of the substrate is used as a material for the chuck pin. Therefore, there is a drawback that the chuck pin is expensive.

JP 2004-6618 A

  The inventors of the present application are examining to perform processing using a processing liquid (processing fluid) on a substrate without rotating the substrate at a high speed. When the substrate processing apparatus has a configuration including a plurality of chambers (first chamber and second chamber), the processing using the processing liquid is performed on the substrate being transferred from the first chamber to the second chamber. Are considering. The substrate is transferred from the first chamber to the second chamber using, for example, a transfer robot. The transfer robot includes an arm and a hand attached to the tip of the arm. The substrate is transported while being held by the hand.

  However, when trying to supply the processing liquid from the processing liquid supply nozzle to the substrate while holding the substrate with the hand, it is necessary to avoid interference between the processing liquid supply nozzle and the hand, so the processing liquid supply nozzle is close to the substrate. Therefore, there is a possibility that processing liquid supply and temperature in the substrate surface vary and the processing cannot be performed uniformly. Therefore, it is desired to transfer a substrate between a plurality of chambers without using a transfer robot.

  SUMMARY OF THE INVENTION Accordingly, an object of the present invention is to process a substrate that can transfer a substrate from the first chamber to the second chamber without using a transfer robot, and can perform processing using a processing fluid on the substrate being transferred. Is to provide a device.

According to the first aspect of the present invention, a plurality of first support members (10; 310) for supporting the peripheral edge portions (4, 5, 6) of the substrate (W) are accommodated, and the plurality of first support members are accommodated in the plurality of first support members. A first chamber (1; 101) that performs a predetermined process on the supported substrate, and a first moving unit (X direction) that moves the first support member in the substrate moving direction (X direction) along the surface of the substrate. 55, 57) and a first opening / closing means (55, 56, 57) for opening and closing the first support member between a contact state where the first support member is in contact with the peripheral portion of the substrate and a retracted state where the first support member is retracted from the peripheral portion of the substrate. 58) and a plurality of second support members (20; 320), which are arranged adjacent to the first chamber via a predetermined substrate delivery path (7) and support the peripheral edge of the substrate. A second chip for performing a predetermined process on the substrate supported by the plurality of second support members; Member (2; 102), second moving means (65, 67) for moving the second support member in the substrate moving direction, and a contact state in which the second support member is in contact with the peripheral edge of the substrate. The second opening / closing means (65, 66, 67, 68) for opening and closing between the retracted state retracted from the peripheral edge of the substrate and the substrate supported by the first support member through the substrate delivery path Control means (70; 120) for controlling the first moving means, the second moving means, the first opening / closing means and the second opening / closing means so as to be delivered to the second support member; and the substrate delivery path the processing using the processing fluid to the substrate during passage subjected processor (3; 103, 104, 105; 403; 503) and viewed including a plurality of first support member, a plurality of each of the first 1st set (10A, 10B) consisting of 1 support member and 1st Each of the plurality of second support members includes a third set (20A, 20B) and a fourth set (20C, 20D) each including a plurality of second support members, The first moving means moves the first set of first support members and the second set of first support members independently in the substrate moving direction, and the first opening / closing means The first set of first support members and the second set of first support members are opened and closed independently, and the control means includes the first set of first support members and the second set of second sets. A step of moving the first and second sets of first support members while supporting the substrate with the first support member; the first set of first support members; the second set of first support members; After the substrate is supported by the three sets of the second support members, the second set of the first support members is moved from the substrate. The step of detaching, the first first support member and the third set of second support members are moved while the substrate is supported by the first set of first support members and the third set of second support members. And after supporting the substrate with the first set of first support members, the third set of second support members, and the fourth set of second support members, the first set of first support members A substrate processing apparatus (100; 200; 300; 400; 500) that executes a process of moving and detaching from a substrate.

In addition, although the alphanumeric characters in parentheses represent corresponding components in the embodiments described later, the scope of the claims is not intended to be limited to the embodiments. The same applies hereinafter.
According to this configuration, the first support member is opened and closed between a contact state where the first support member is in contact with the peripheral portion of the substrate and a retracted state where the first support member is retracted from the peripheral portion of the substrate. Further, the first support member is moved in the substrate moving direction.

Further, the plurality of second support members are opened and closed between a contact state in which the second support member is in contact with the peripheral portion of the substrate and a retracted state in which the plurality of second support members are retracted from the peripheral portion of the substrate. The second support member is moved in the substrate moving direction.
Then, the operation in which the first support member and / or the second support member moves in the substrate moving direction while supporting the substrate, respectively, and the first support member and the second support member are in the contact state and the retracted state, respectively. The substrate is transferred from the plurality of first support members to the plurality of second support members in combination with the opening / closing operation.

  In the delivery of the substrate, the substrate passes through a substrate delivery path provided between the first chamber and the second chamber. Then, the processing unit uses the processing fluid to process the substrate passing through the substrate delivery path. Therefore, the substrate can be transferred from the first chamber to the second chamber without using a separate substrate robot. Then, processing using a processing fluid can be performed on the substrate being transferred.

Further , the first and second sets of first support members are moved while the substrate is supported by the first set of first support members and the second set of first support members. Thereby, a board | substrate can be moved to a board | substrate movement direction.
Next, the second set of first support members are brought into contact with the peripheral edge of the substrate, and the substrate is supported by the first set of first support members, the second set of first support members, and the third set of second support members. Then, the second set of first support members are moved away from the substrate. Therefore, the substrate is supported by the first set of first support members and the third set of second support members.

Next, the first set of first support members and the third set of second support members are moved while the substrate is supported by the first set of first support members and the third set of second support members. Thereby, a board | substrate can be moved to a board | substrate movement direction.
Next, the fourth set of second support members are brought into contact with the peripheral edge of the substrate, and the first set of first support members, the third set of second support members, and the fourth set of second support members support the substrate. Then, the first set of first support members are moved away from the substrate. Accordingly, the substrate is transferred to the plurality of second support members.

Therefore, delivery from the first support member to the second support member can be realized with a relatively simple configuration.
According to a second aspect of the present invention, the processing section opens linearly along a direction orthogonal to the substrate movement direction, and is transferred from the first chamber to the second chamber through the substrate transfer path. the slit discharge port for discharging the processing fluid toward the substrate comprises a (33, 35; 1033,1034,1043,1044,1053,1054; 4033 5033), a substrate processing apparatus according to claim 1 Symbol placement.

  According to this configuration, the processing fluid discharged from the slit discharge port is supplied to the main surface of the substrate passing through the substrate delivery path. The supply position of the processing fluid on the main surface of the substrate is a straight line extending in a direction orthogonal to the substrate moving direction. For this reason, the substrate moving in the substrate moving direction is scanned by the processing fluid discharged linearly. Thereby, the process fluid can be processed over a wide area of the substrate.

According to a third aspect of the present invention, the processing unit includes a first processing unit (31, 1031, 1041, 1051; 4031; 5031) and a second processing unit (32, 1032) provided across the substrate delivery path. 1042, 1052), the first processing unit is disposed to face one main surface of the substrate, and is transferred from the first chamber to the second chamber through the substrate transfer path. A discharge port (33, 1033, 1043, 1053; 4033; 5033) for discharging a processing fluid toward the substrate, and the second processing unit is disposed to face the other main surface of the substrate; A discharge port (34, 1034, 1044, 1054) for discharging a processing fluid toward the substrate delivered from the first chamber to the second chamber through the substrate delivery path; A substrate processing apparatus of claim 1 or 2 wherein.

According to this configuration, the processing fluid from the discharge port of the first processing unit is discharged onto one main surface of the substrate passing through the substrate delivery path, and the second processing unit is discharged onto the other main surface of the substrate. The processing fluid is discharged from the discharge port. As a result, both main surfaces of the substrate can be processed with the processing fluid while passing through the substrate delivery path.
According to a fourth aspect of the present invention, the processing section includes a plurality of discharge ports (1033, 1043, 1053, 1034, 1044, 1054) arranged along the substrate delivery path, and the plurality of discharge ports. outlet, respectively, the direction from the through substrate transfer path first chamber to the substrate to be passed into the second chamber, for ejecting different types of treatment fluids with each other, any one of the claims 1-3 The substrate processing apparatus according to the item.

  According to this configuration, a plurality of types of processing fluids discharged from the plurality of discharge ports arranged along the substrate delivery path are supplied to the main surface of the substrate passing through the substrate delivery path. For example, the supply positions of the plurality of processing fluids on the main surface of the substrate are set at intervals along the substrate movement direction. In this case, each part of the substrate is sequentially scanned with each type of processing fluid as the substrate moves. Therefore, a plurality of processing fluids are supplied in a predetermined order at each part of the substrate. Thereby, a series of processes using a plurality of kinds of processing fluids can be sequentially performed.

As described in claim 5, wherein the first support member includes a first vertical posture supporting member for supporting the posture along the substrate in a vertical direction, the second support member, the posture along the substrate in a vertical direction A second vertical posture supporting member to be supported may be included.
According to a sixth aspect of the present invention, the first chamber and the second chamber may perform processing using a processing fluid on a substrate.

According to a seventh aspect of the present invention, the first chamber and the second chamber may perform a predetermined measurement process in relation to the substrate.
In this case, the first chamber and the second chamber perform processing for measuring the state (size and / or amount (number)) of foreign matters (particles) adhering to the surface (one main surface) of the substrate. It may be applied. In this case, if the processing unit performs the cleaning process on the substrate using the processing fluid, the first chamber measures the state of the foreign matter adhering to the surface of the substrate before the cleaning, and the second chamber Then, it is possible to measure the state of the foreign matter adhering to the surface of the substrate after the cleaning. Thereby, the effect of the cleaning process can be confirmed by comparing the state of the foreign matter before and after the cleaning process.

  Further, the first chamber and the second chamber may perform a process for measuring the thickness of the substrate (the thickness of the substrate itself or the thickness of the thin film formed on the surface of the substrate). In this case, if the processing unit performs an etching process on the substrate using an etching solution, the thickness of the substrate before the etching process is measured in the first chamber, and the etching process is performed in the second chamber. The thickness of the substrate can be measured later. Thereby, the thickness of the board | substrate before and behind an etching process can be compared, and the effect of an etching process can be confirmed.

1 is a cross-sectional view schematically showing the configuration of a substrate processing apparatus according to a first embodiment of the present invention. FIG. 2 is a diagram schematically illustrating a configuration of a processing unit illustrated in FIG. 1. It is a side view explaining the structure of the 1st supporting member shown in FIG. FIG. 2 is a plan view schematically showing a mechanism for driving a first support member shown in FIG. 1. FIG. 5 is a plan view schematically showing a mechanism for driving a second support member shown in FIG. 1. It is a block diagram which shows the electric constitution of the substrate processing apparatus shown in FIG. It is process drawing which shows an example of the process in the substrate processing apparatus shown in FIG. It is a cross-sectional view for explaining the substrate delivery operation from the first support member to the second support member (No. 1). It is a cross-sectional view for explaining the substrate delivery operation from the first support member to the second support member (No. 2). FIG. 11 is a transverse cross-sectional view for explaining the substrate delivery operation from the first support member to the second support member (No. 3). It is a cross-sectional view for explaining the substrate delivery operation from the first support member to the second support member (No. 4). It is a cross-sectional view for explaining the substrate delivery operation from the first support member to the second support member (No. 5). It is a cross-sectional view for explaining the substrate delivery operation from the first support member to the second support member (No. 6). It is sectional drawing which shows the structure of the substrate processing apparatus concerning 2nd Embodiment of this invention illustratively. FIG. 10 is a block diagram showing an electrical configuration of the substrate processing apparatus shown in FIG. 9. It is process drawing which shows an example of the process in the substrate processing apparatus shown in FIG. It is sectional drawing which shows schematically the structure of the substrate processing apparatus which concerns on 3rd Embodiment of this invention. It is sectional drawing which shows schematically the structure of the substrate processing apparatus which concerns on 4th Embodiment of this invention. It is sectional drawing which shows schematically the structure of the substrate processing apparatus which concerns on 5th Embodiment of this invention.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.
FIG. 1 is a cross-sectional view schematically showing a configuration of a substrate processing apparatus 100 according to one embodiment (first embodiment) of the present invention.
The substrate processing apparatus 100 uses a processing fluid (chemical solution, DIW (deionized water), dry gas, etc.) for a semiconductor wafer W (hereinafter simply referred to as “wafer W”) as an example of a substrate. Is a single-wafer type device for performing a cleaning process (for example, a particle removal process). The substrate processing apparatus 100 includes a first chamber 1 surrounded by a side wall 1A, and a second chamber which is disposed adjacent to the first chamber 1 on a predetermined X direction (described later) side and surrounded by the side wall 2A. 2, and a processing unit 3 provided between the first chamber 1 and the second chamber 2. In the first chamber 1, a chemical process using a chemical is performed on the wafer W. In the processing unit 3, a rinsing process is performed in which the chemical liquid adhered to the wafer W by the chemical liquid process in the first chamber 1 is washed away with DIW. In the second chamber 2, the wafer W after the rinsing process is subjected to a drying process using a drying gas.

In the first chamber 1, a plurality of (for example, four) first support members 10 (in FIG. 1, the first support) for supporting the peripheral edge of the wafer W and supporting the wafer W in a substantially horizontal posture. Only three members 10 are shown) and a first slit nozzle 11 for supplying a chemical solution to the upper surface of the wafer W supported by the plurality of first support members 10 is accommodated.
The peripheral portion of the wafer W is a portion including the peripheral region 4 (see FIG. 3) on the front surface of the wafer W, the peripheral region 5 (see FIG. 3) on the back surface of the wafer W, and the peripheral end surface 6 (see FIG. 3). Say. The peripheral regions 4 and 5 are, for example, annular regions having a width of 1 to 4 mm from the peripheral edge of the wafer W.

  The first slit nozzle 11 is opposed to the upper surface of the wafer W supported by the plurality of first support members 10 and opens linearly along a predetermined direction (for example, a direction orthogonal to the paper surface shown in FIG. 1). A first discharge port 12 is formed. The length of the first discharge port 12 in the longitudinal direction is set larger than the diameter of the wafer W. A chemical liquid supply pipe 13 that communicates with the first discharge port 12 is connected to the first slit nozzle 11. The chemical solution supply pipe 13 is supplied with a chemical solution from a chemical solution supply source, and a chemical solution valve 14 for switching supply and stop of supply of the chemical solution to the first slit nozzle 11 is provided in the middle of the chemical solution supply pipe 13. It is intervened. If the chemical | medical solution valve | bulb 14 is opened, the 1st discharge port 12 will discharge a chemical | medical solution in the curtain shape (strip | belt shape) along the longitudinal direction.

  The first slit nozzle 11 is held by a holding rail (not shown) so as to be able to reciprocate along the horizontal direction orthogonal to the first discharge port 12 (along the surface of the wafer W). That is, the first nozzle moving mechanism 15 is coupled to the first slit nozzle 11. With the driving force of the first nozzle moving mechanism 15, the first slit nozzle 11 can be reciprocated along a horizontal direction orthogonal to the first discharge port 12.

A first opening 16 for carrying in and out is formed in a portion of the side wall 1 </ b> A of the first chamber 1 facing the second chamber 2. In relation to the first opening 16, the first chamber 1 is provided with a first shutter 17 for opening and closing the first opening 16.
When processing the wafer W, the wafer W is placed at a predetermined processing position (the position of the wafer W shown in FIG. 1). X-direction drive mechanisms 55 and 57 (described later, see FIG. 4) are coupled to the first support member 10. The wafer W is moved from the processing position in a predetermined substrate movement direction (hereinafter referred to as “X direction”) by the driving force of the X direction driving mechanisms 55 and 57.

In the second chamber 2, a plurality of (for example, four) second support members 20 (only three second support members 20 are shown in FIG. 1) for supporting the wafer W in a substantially horizontal posture, A second slit nozzle 21 for supplying a dry gas is accommodated on the upper surface of the wafer W supported by the plurality of second support members 20.
The second slit nozzle 21 faces the upper surface of the wafer W supported by the plurality of second support members 20 and opens linearly along a predetermined direction (for example, a direction orthogonal to the paper surface shown in FIG. 1). A second discharge port 22 is formed. The length of the second discharge port 22 in the longitudinal direction is set larger than the diameter of the wafer W. A dry gas supply pipe 23 communicating with the second discharge port 22 is connected to the second slit nozzle 21. The drying gas supply pipe 23 is supplied with a drying gas from a drying gas supply source, and in the middle thereof, the supply of the drying gas to the second slit nozzle 21 and the supply stop are switched. A dry gas valve 24 is interposed. When the dry gas valve 24 is opened, the second discharge port 22 discharges the dry gas in a curtain shape (strip shape) along the longitudinal direction.

  The second slit nozzle 21 is held by a holding rail (not shown) so as to be able to reciprocate along the horizontal direction orthogonal to the second discharge port 22 (along the surface of the wafer W). That is, the second nozzle moving mechanism 25 is coupled to the second slit nozzle 21. With the driving force of the second nozzle moving mechanism 25, the second slit nozzle 21 can be reciprocated along a horizontal direction orthogonal to the second discharge port 22.

A second opening 26 for carrying in and out is formed in a portion of the side wall 2A of the second chamber 2 facing the first chamber 1. In relation to the second opening 26, the second chamber 2 is provided with a second shutter 27 for opening and closing the second opening 26.
When processing the wafer W, the wafer W is placed at a predetermined processing position (the position of the wafer W shown in FIG. 1). X-direction moving members 65 and 67 (described later, see FIG. 5) are coupled to the second support member 20. The wafer W is moved in the X direction to the processing position by the driving force of the X direction driving mechanisms 65 and 67.

  The wafer W can be delivered via the substrate delivery path 7 between the plurality of first support members 10 and the plurality of second support members 20. The delivery of the wafer W is performed while keeping the wafer W in a horizontal posture. The substrate delivery path 7 extends along the horizontal direction along the X direction, and specifically between the first chamber 1 and the second chamber 2, specifically, the first opening 16 and the second chamber 2 of the first chamber 1. The second opening 26 is formed. The length of the substrate delivery path 7 in the X direction is about ½ of the diameter of the wafer W.

FIG. 2 is a diagram schematically illustrating the configuration of the processing unit 3.
The processing unit 3 includes a first processing unit 31 for rinsing the upper surface (front surface) of the wafer W that is passing through the substrate delivery path 7, and a lower surface (back surface) of the wafer W that is passing through the substrate delivery path 7. ) With a second processing unit 32 for performing a rinsing process. The first processing unit 31 and the second processing unit 32 are arranged with the substrate delivery path 7 interposed therebetween.

  The first processing unit 31 is disposed above the substrate delivery path 7. The first processing unit 31 is opposed to the upper surface of the wafer W passing the substrate delivery path 7 and opens in a straight line along the Y direction (one of the horizontal directions orthogonal to the X direction). have. The first processing unit 31 includes a first main body 34 having a rectangular parallelepiped shape that is long in the Y direction. The first main body 34 has a horizontal lower surface. The first slit discharge port 33 is formed on the lower surface of the first main body 34. The length of the first slit discharge port 33 in the longitudinal direction (Y direction) is set larger than the diameter of the wafer W.

  The second processing unit 32 is disposed below the substrate delivery path 7. The second processing unit 32 has a second slit discharge port 35 that faces the lower surface of the first main body 34 and opens linearly along the Y direction. Therefore, the second slit discharge port 35 faces the lower surface of the wafer W that delivers the substrate delivery path 7. The second processing unit 32 includes a second main body 36 having a rectangular parallelepiped outer shape that is long in the Y direction. The second main body 36 has a horizontal upper surface. The second slit discharge port 35 is formed on the upper surface of the second main body 36. The length of the second slit discharge port 35 in the longitudinal direction (Y direction) is set larger than the diameter of the wafer W.

  An interval between the lower surface (first slit discharge port 33) of the first processing unit 31 and the upper surface (second slit discharge port 35) of the second processing unit 32 is set to about 3 mm, for example. The distance between the upper surface of the wafer W passing through the substrate delivery path 7 and the lower surface (first slit discharge port 33) of the first processing unit 31 is set to about 1 mm, for example. The distance between the lower surface of the wafer W passing through the substrate delivery path 7 and the upper surface (second slit discharge port 35) of the second processing unit 32 is set to about 1 mm, for example.

  A first DIW supply pipe 37 communicating with the first slit discharge port 33 is connected to the first processing unit 31. A second DIW supply pipe 38 communicating with the second slit discharge port 35 is connected to the second processing unit 32. DIW from a DIW supply source is supplied to the first DIW supply pipe 37 and the second DIW supply pipe 38 via a DIW valve 39. When the DIW valve 39 is opened while the wafer W is passing through the substrate delivery path 7, curtain-like (band-like) DIW along the Y direction is discharged downward from the first slit discharge port 33. A linear supply position of DIW along the Y direction is set on the upper surface (front surface) of the wafer W.

Also, curtain-like (band-like) DIW along the Y direction is discharged upward from the second slit discharge port 35, and a supply position of linear DIW along the Y-direction is set on the lower surface (back surface) of the wafer W. The
FIG. 3 is a side view illustrating the configuration of the first support member 10.
The plurality of first support members 10 have a common configuration. Each first support member 10 includes a base 44 and a support portion 40 disposed on the base 44.

  The support part 40 is formed using materials, such as PCTFE (Poly Chloro Tri Furuoro Ethylene), for example. The support portion 40 includes a first portion 41 that can contact the peripheral region 4 and the peripheral end surface 6 of the upper surface (front surface) of the wafer W, a second portion 42 that can contact the peripheral end surface 6 of the wafer W, and the wafer. A peripheral portion 5 on the lower surface (back surface) of W and a third portion 43 that can come into contact with the peripheral end surface 6 are integrally provided in the vertical direction (direction along the Z direction), and are formed in a substantially drum shape.

The first portion 41 has a truncated cone shape that narrows downward. The side surface of the first portion 41 has an inclination angle of, for example, 45 ° with respect to the central axis, and is inclined so as to approach the central axis as it goes downward. In the first portion 41, the side surface can come into contact with the peripheral region 4 and the peripheral end surface 6 on the surface of the wafer W.
The second portion 42 has a cylindrical shape having a central axis composed of a vertical axis. The peripheral surface of the second portion 42 has an upper end edge continuous with the lower end edge of the side surface of the first portion 41. The side surface of the second portion 42 can contact the peripheral end surface 6 of the wafer W.

  The third portion 43 has a truncated cone shape that expands downward. The side surface of the third portion 43 has an inclination angle of, for example, 45 ° with respect to the central axis, and is inclined so as to approach the central axis as it goes upward. The side surface of the third portion 43 has an upper end edge continuous with a lower end edge of the peripheral surface of the second portion 42. In the third portion 43, the side surface can come into contact with the peripheral region 5 and the peripheral end surface 6 on the back surface of the wafer W.

The base 44 is constituted by a prism having a predetermined height. The base 44 is fixed to the lower surface of the third portion 43 of the support portion 40 and supports the support portion 40 from below. Rods 19A, 19B, 19C, and 19D supported by the first slide member 53 or the second slide member 54 are connected to the base 44 of each first support member 10.
In the supporting state of the wafer W, one of the side surface of the first portion 41, the peripheral surface of the second portion 42, and the side surface of the third portion 43 is in contact with the peripheral edge of the wafer W (in the state shown in FIG. 3). The peripheral surface of the second portion 42 is in contact with the peripheral end surface 6 of the wafer W).

The second support member 20 has the same configuration as the first support member 10. Therefore, description of each part of the 2nd support member 10 is abbreviate | omitted. The bases 44 of the second support member 10 are connected to rods 29A, 29B, 29C, and 29D that are pivotally supported by the third slide member 63 or the fourth slide member 64.
FIG. 4 is a plan view schematically showing a mechanism for driving the first support member 10. Hereinafter, as the plurality of first support members 10, a first set of first support members 10 </ b> A and 10 </ b> B composed of two first support members, and a second set of first support members 10 </ b> C composed of two first support members, A case where 10D is provided will be described as an example. The first support members 10A, 10B, 10C, and 10D are collectively referred to as the first support member 10.

  In the first chamber 1, two rails (a first rail 51 and a second rail 52) extending along the X direction are disposed. The two rails 51 and 52 are disposed at substantially the same height and close to each other. A first slide member 53 is attached to the first rail 51 so as to be movable along the X direction. The first slide member 53 supports the first set of first support members 10A and 10B. A second slide member 54 is attached to the second rail 52 so as to be movable along the X direction. The second slide member 54 supports the second set of second support members 10C and 10D. A configuration for supporting / driving the first set of first support members 10A, 10B is shown by a solid line in FIG. 4, and a configuration for supporting / driving the second set of first support members 10C, 10D. 4 is indicated by a thick line.

The first slide member 53 includes a cylindrical housing that is long in the Y direction. The first slide member 53 is coupled to a first X-direction drive mechanism 55 such as a motor for moving the first slide member 53 along the X direction.
The rod 19A of the first support member 10A and the rod 19B of the first support member 10B are inserted into the housing of the first slide member 53. A rod 19A of the first support member 10A is provided at one end portion (upper end portion shown in FIG. 4) of the housing of the first slide member 53 so as to be able to advance / immerse in the Y direction with respect to the housing. A rod 19B of the first support member 10B is provided at the other end portion (lower end portion shown in FIG. 4) of the housing of the first slide member 53 so as to be able to advance / immerse in the Y direction with respect to the housing.

  A first cylinder 56 is accommodated in the housing of the first slide member 53 (in FIG. 4, the first cylinder 56 is shown outside the housing for the sake of illustration). The first cylinder 56 includes a cylinder body (not shown) and a cylinder rod (not shown) that can be advanced / removed with respect to the cylinder body. The cylinder rod of the first cylinder 56 is connected to both the rod 19A of the first support member 10A and the rod 19B of the first support member 10B via a link mechanism (not shown).

Then, when the cylinder rod of the first cylinder 56 advances relative to the cylinder body, the rod 19A of the first support member 10A and the rod 19B of the first support member 10B are respectively moved to the housing of the first slide member 53. The first set of first support members 10A and 10B moves in a direction away from each other (Y direction).
Further, when the cylinder rod of the first cylinder 56 is immersed in the cylinder body, the rod 19A of the first support member 10A and the rod 19B of the first support member 10B are respectively housed in the housing of the first slide member 53. The first support members 10A and 10B of the first set move in a direction approaching each other (Y direction).

The first set of first support members 10 </ b> A and 10 </ b> B is collectively moved along the X direction by the drive of the first X-direction drive mechanism 55. Further, the first set of first support members 10 </ b> A and 10 </ b> B is collectively moved along the Y direction in the direction of approaching / separating from each other by the driving of the first cylinder 56.
Then, by driving the first X-direction drive mechanism 55 and / or the first cylinder 56, the first set of first support members 10A and 10B are brought into contact with the peripheral portion of the wafer W and the peripheral portion of the wafer W Can be opened and closed between the retracted state and the retracted state.

The second slide member 54 includes a cylindrical housing that is long in the Y direction. A second X-direction drive mechanism 57 such as a motor for moving the second slide member 54 along the X direction is coupled to the second slide member 54.
The rod 19C of the first support member 10C and the rod 19D of the first support member 10D are inserted into the housing of the second slide member 54. A rod 19C of the first support member 10C is provided at one end portion (upper end portion shown in FIG. 4) of the housing of the second slide member 54 so as to be able to advance / immerse in the Y direction with respect to the housing. A rod 19D of the first support member 10D is provided at the other end portion (lower end portion shown in FIG. 4) of the housing of the second slide member 54 so as to be able to advance / immerse in the Y direction with respect to the housing.

  A second cylinder 58 is accommodated in the housing of the second slide member 54 (in FIG. 4, the second cylinder 58 is shown outside the housing for the purpose of illustration). The second cylinder 58 includes a cylinder body (not shown) and a cylinder rod (not shown) that can be advanced / removed with respect to the cylinder body. The cylinder rod of the second cylinder 58 is connected to both the rod 19C of the first support member 10C and the rod 19D of the first support member 10D via a link mechanism (not shown).

Then, when the cylinder rod of the second cylinder 58 advances relative to the cylinder body, the rod 19C of the first support member 10C and the rod 19D of the first support member 10D are respectively moved to the housing of the second slide member 54. The second set of first support members 10C and 10D moves in a direction away from each other (Y direction).
Further, when the cylinder rod of the second cylinder 58 is immersed in the cylinder body, the rod 19C of the first support member 10C and the rod 19D of the first support member 10D are respectively housed in the housing of the second slide member 54. The second set of first support members 10C and 10D moves in a direction approaching each other (Y direction).

The second set of first support members 10C, 10D is moved together along the X direction by driving the second X-direction drive mechanism 57, and the second set of first support members 10C, 10D is By driving the two cylinders 58, the cylinders 58 are moved together in the Y direction in the directions approaching / separating from each other.
Then, by driving the second X-direction drive mechanism 57 and / or the second cylinder 58, the second set of first support members 10C, 10D is brought into contact with the peripheral edge of the wafer W, and the peripheral edge of the wafer W Can be opened and closed between the retracted state and the retracted state.

As a result, the first set of first support members 10A and 10B and the second set of first support members 10C and 10D can be moved independently along the X direction. The first support members 10A and 10B and the second set of first support members 10C and 10D can be opened and closed independently.
FIG. 5 is a plan view schematically showing a mechanism for driving the second support member 20. Hereinafter, as the plurality of second support members 20, a third set of second support members 20A and 20B including two second support members, and a second set of second support members 20C including two second support members, A case where 20D is provided will be described as an example. The second support members 20A, 20B, 20C, and 20D are collectively referred to as the second support member 20.

  In the second chamber 2, two rails (a third rail 61 and a fourth rail 62) extending along the X direction are disposed. The two rails 61 and 62 are disposed at substantially the same height and close to each other. A third slide member 63 is attached to the third rail 61 so as to be movable along the X direction. The third slide member 63 supports the third set of second support members 20A and 20B. A fourth slide member 64 is attached to the fourth rail 62 so as to be movable along the X direction. The fourth slide member 64 supports the fourth set of second support members 20C and 20D. A configuration for supporting / driving the third set of second support members 20A, 20B is shown by a solid line in FIG. 5, and a configuration for supporting / driving the fourth set of second support members 20C, 20D. 5 is indicated by a thick line.

The third slide member 63 includes a cylindrical housing that is long in the Y direction. The third slide member 63 is coupled to a third X-direction drive mechanism 65 such as a motor for moving the third slide member 63 along the X direction.
The rod 29A of the second support member 20A and the rod 29B of the second support member 20B are inserted into the housing of the third slide member 63. A rod 29A of the second support member 20A is provided at one end portion (upper end portion shown in FIG. 5) of the housing of the third slide member 63 so as to be able to advance / immerse in the Y direction with respect to the housing. A rod 29B of the second support member 20B is provided at the other end portion (lower end portion shown in FIG. 5) of the housing of the third slide member 63 so as to be able to advance / immerse in the Y direction with respect to the housing.

  A third cylinder 66 is accommodated in the housing of the third slide member 63 (in FIG. 5, the third cylinder 66 is shown outside the housing for the purpose of illustration). The third cylinder 66 includes a cylinder body (not shown) and a cylinder rod (not shown) that can be advanced / removed with respect to the cylinder body. The cylinder rod of the third cylinder 66 is connected to both the rod 29A of the second support member 20A and the rod 29B of the second support member 20B via a link mechanism (not shown).

Then, when the cylinder rod of the third cylinder 66 advances relative to the cylinder body, the rod 29A of the second support member 20A and the rod 29B of the second support member 20B are respectively housed in the housing of the third slide member 63. The third set of second support members 20A and 20B moves in a direction away from each other (Y direction).
Further, when the cylinder rod of the third cylinder 66 is immersed in the cylinder body, the rod 29A of the second support member 20A and the rod 29B of the second support member 20B are respectively housed in the housing of the third slide member 63. The third set of second support members 20A and 20B moves in a direction in which they approach each other (Y direction).

The third set of second support members 20A and 20B is collectively moved along the X direction by the drive of the third X-direction drive mechanism 65, and the third set of second support members 20A and 20B is By driving the three cylinders 66, the three cylinders 66 are moved together in the Y direction in the directions approaching / separating from each other.
Then, by driving the third X-direction drive mechanism 65 and / or the third cylinder 66, the third set of second support members 20A, 20B is brought into contact with the peripheral portion of the wafer W, and the peripheral portion of the wafer W Can be opened and closed between the retracted state and the retracted state.

The fourth slide member 64 includes a cylindrical housing that is long in the Y direction. A fourth X-direction drive mechanism 67 such as a motor for moving the fourth slide member 64 along the X direction is coupled to the fourth slide member 64.
The rod 29C of the second support member 20C and the rod 29D of the second support member 20D are inserted into the housing of the fourth slide member 64. A rod 29C of the second support member 20C is provided at one end portion (upper end portion shown in FIG. 5) of the housing of the fourth slide member 64 so that the rod 29C can advance / immerse in the Y direction with respect to the housing. A rod 29D of the second support member 20D is provided at the other end portion (lower end portion shown in FIG. 5) of the housing of the fourth slide member 64 so as to be able to advance / immerse in the Y direction with respect to the housing.

  A fourth cylinder 68 is accommodated in the housing of the fourth slide member 64 (in FIG. 5, the fourth cylinder 68 is shown outside the housing for the purpose of illustration). The fourth cylinder 68 includes a cylinder body (not shown) and a cylinder rod (not shown) that can be advanced / removed with respect to the cylinder body. The cylinder rods of the fourth cylinder 68 are respectively connected to both the rod 29C of the second support member 20C and the rod 29D of the second support member 20D via a link mechanism (not shown).

Then, when the cylinder rod of the fourth cylinder 68 advances relative to the cylinder body, the rod 29C of the second support member 20C and the rod 29D of the second support member 20D are respectively housed in the housing of the fourth slide member 64. The fourth set of second support members 20C and 20D moves in a direction away from each other (Y direction).
Further, when the cylinder rod of the fourth cylinder 68 is immersed in the cylinder body, the rod 29C of the second support member 20C and the rod 29D of the second support member 20D are respectively housed in the housing of the fourth slide member 64. And the fourth set of second support members 20C and 20D moves in a direction approaching each other (Y direction).

The fourth set of second support portions 20C and 20D is moved collectively along the X direction by the drive of the fourth X-direction drive mechanism 67, and in the direction of approaching each other by the drive of the fourth cylinder 68. It is moved collectively along the Y direction in the direction of separation.
Then, by driving the fourth X-direction drive mechanism 67 and / or the fourth cylinder 68, the fourth set of second support members 20C and 20D is brought into contact with the peripheral edge of the wafer W, and the peripheral edge of the wafer W Can be opened and closed between the retracted state and the retracted state.

Accordingly, the third set of second support members 20A, 20B and the fourth set of second support members 20C, 20D can be moved independently along the X direction, and the third set of second support members 20C, 20D can be moved independently. The two support members 20A and 20B and the fourth set of second support members 20C and 20D can be opened and closed independently.
FIG. 6 is a block diagram showing an electrical configuration of the substrate processing apparatus 100.

  The substrate processing apparatus 100 includes a control device 70 having a configuration including a microcomputer. The controller 70 includes a first X-direction drive mechanism 55, a second X-direction drive mechanism 57, a first cylinder 56, a second cylinder 58, a chemical valve 14, a first nozzle moving mechanism 15, a DIW valve 39, and a third X-direction drive. A mechanism 65, a fourth X-direction drive mechanism 67, a third cylinder 66, a fourth cylinder 68, a dry gas valve 24, a second nozzle moving mechanism 25, and the like are connected as control targets.

FIG. 7 is a process diagram showing an example of processing in the substrate processing apparatus 100.
The wafer W to be processed is loaded into the first chamber 1 by a transfer robot (not shown) (step S1), and held by the four first support members 10 with the surface of the wafer W facing upward.
After the wafer W is held on the first support member 10, the control device 70 drives the first nozzle moving mechanism 15 to guide the first slit nozzle 11 upward of the wafer W. When the first slit nozzle 11 reaches above the wafer W, the control device 70 opens the chemical liquid valve 14, and the curtain having a width in the horizontal direction perpendicular to the first discharge port 12 from the slit-shaped first discharge port 12. The chemical solution is discharged with a profile (strip shape) (S2: chemical treatment).

  In this chemical processing, the control device 70 controls the first nozzle moving mechanism 15 to move the first slit nozzle 11 along a horizontal direction perpendicular to the longitudinal direction of the first discharge port 12 to a predetermined moving range. Move in a straight line. Accordingly, the supply position of the curtain-like (strip-shaped) chemical solution from the first slit nozzle 11 moves on the surface of the wafer W, and from one end of the wafer W in the direction orthogonal to the longitudinal direction of the first discharge port 12. Reciprocates within the range reaching the other end.

When the chemical liquid discharge position is reciprocated a predetermined number of times, the control device 70 closes the chemical liquid valve 14 and stops the supply of the chemical liquid to the surface of the wafer W. Further, the control device 70 controls the first nozzle moving mechanism 15 to return the first slit nozzle 11 to the retracted position on the side of the wafer W.
After the chemical processing, the surface of the wafer W is subjected to the rinsing process in step S3, and after the rinsing process is completed, the drying process in step S4 is performed. However, the rinsing process and the drying process are not performed in the first chamber 1. The rinse process in step S3 is performed in the substrate transfer path 7 provided between the first chamber 1 and the second chamber 2, and the drying process in step S4 is performed in the second chamber 2.

  In the substrate processing apparatus 100, the transfer of the wafer W from the first chamber 1 to the second chamber 2 is performed using the four first support members 10 and the four second support members 20. That is, the four first support members 10 and the four second support members 20 are driven, and the wafer W is delivered from the four first support members 10 to the four second support members 20 through the substrate delivery path 7. By this wafer W delivery operation, the wafer W is transferred from the first chamber 1 to the second chamber 2 while being moved in the X direction. In the rinsing process in step S3, the rinsing process is performed on the upper surface (one surface of the main surface) and the lower surface (the other surface of the main surface) of the wafer W passing through the substrate delivery path 7.

8A to 8F are cross-sectional views for explaining the delivery operation of the wafer W from the first support member 10 to the second support member 20.
As shown in FIG. 8A, at the processing position of the wafer W in the first chamber 1, the first set of first support members 10 </ b> A and 10 </ b> B has two locations near the opposite end in the X direction on the peripheral edge of the wafer W. The second set of first support members 10 </ b> C and 10 </ b> D supports the vicinity of both end portions in the direction along the Y direction in the peripheral portion of the wafer W. That is, in this processing position, the second set of first support members 10C and 10D is disposed on the X direction side of the first set of first support members 10A and 10B.

  After completion of the chemical liquid processing in step S2 (after the first slit nozzle 11 returns to the retracted position), the control device 70 moves the first support members 10A to 10D in the X direction. The control device 70 controls the first X-direction drive mechanism 55 and the second X-direction drive mechanism 57 to move the first set of first support members 10A and 10B and the second set of first support members 10C and 10D at a constant speed. To move in the X direction. As a result, the wafer W is moved in the X direction from the processing position of the first chamber 1 (the position shown in FIGS. 1 and 8A).

  The four second support members 20 </ b> A to 20 </ b> D need to be positioned near the second opening 26 in the second chamber 2 in order to receive the wafer W. Therefore, the control device 70 controls the third X-direction drive mechanism 65 and the fourth X-direction drive mechanism 67 to change the third set of second support members 20A and 20B and the fourth set of second support members 20C and 20D. The second chamber 2 is moved in the direction opposite to the X direction to a position near the second opening 26.

  Further, the control device 70 opens the DIW valve 39, and DIW from the first slit discharge port 33 (see FIG. 2) of the first processing unit 31 and the second slit discharge port 35 (see FIG. 2) of the second processing unit 32. Is discharged. In addition, the drive mechanism that drives the first shutter 17 is controlled to open the first shutter 17, and the drive mechanism that drives the second shutter 27 is controlled to open the second shutter 27.

  Then, the end portion of the wafer W in the X direction passes through the first opening 16 and moves on the substrate delivery path 7. DIW is discharged from the first slit discharge port 33 of the first processing unit 31 and the second slit discharge port 35 of the second processing unit 32 to the upper and lower surfaces of the wafer W that is passing through the substrate delivery path 7. A linear DIW supply position along the Y direction is set on the upper surface (front surface) of the wafer W. A linear DIW supply position along the Y direction is also set on the lower surface (back surface) of the wafer W. During the movement of the wafer W, the DIW supply position on the upper surface and the lower surface of the wafer W has a form of cleaning that covers the entire width of the wafer W (maximum width in the Y direction) perpendicular to the X direction, which is the substrate movement direction. doing. Then, the end portion of the wafer W in the X direction passes through the second opening 26 and enters the second chamber 2.

In the chemical treatment in the first chamber 1, it is conceivable that the chemical goes around the back surface of the wafer W. Therefore, it is desirable to perform the rinsing process on both surfaces of the wafer W. In the rinsing process in step S3, DIW is supplied to both surfaces of the wafer W, so that the chemical solution adhering to the back surface of the wafer W can be washed away.
Further, when the end portion of the wafer W in the X direction approaches the third set of second support members 20A and 20B, the third set of second support members 20A and 20B is formed on the wafer W as shown in FIG. 8B. The two peripheral portions of the peripheral portion of the wafer W are in contact with each other near the end in the X direction, and the peripheral portion of the wafer W is supported.

  Thereafter, the control device 70 controls the second cylinder 58 to move the second set of first support members 10 </ b> C and 10 </ b> D supporting the peripheral edge of the wafer W in directions away from each other. As a result, the second set of first support members 10C and 10D retracts from the peripheral edge of the wafer W (separates from the wafer W), and the first set of first support members 10A and 10B and the third set of second support members. The wafer W is supported by 20A and 20B. During the retraction operation of the second set of first support members 10C and 10D, the first set of first support members 10A and 10B and the third set of second support members 20A and 20B continue to move in the X direction. It may be interrupted. Further, the control device 70 controls the second X-direction drive mechanism 57 to return the second set of first support members 10 </ b> C and 10 </ b> D retracted from the peripheral portion of the wafer W to the original positions.

  Next, the control device 70 controls the first X-direction drive mechanism 55 and the third X-direction drive mechanism 65 so that the first set of the first support members 10A and 10B and the third set of the second support members 20A and 20B. Move in the X direction at a constant speed. In this state, as shown in FIG. 8C, the fourth set of second support members 20C and 20D is in a direction away from the center of the wafer W rather than both ends in the direction along the Y direction at the peripheral edge of the wafer W. positioned.

  Then, as shown in FIG. 8D, when the first set of first support members 10A and 10B supporting the peripheral edge of the wafer W reaches the vicinity of the end in the X direction in the first chamber 1, the control device 70 is Then, the fourth cylinder 68 is controlled to move the fourth set of second support members 20C and 20D in the direction approaching each other. As a result, the fourth set of second support members 20C and 20D abuts near both end portions in the direction along the Y direction at the peripheral portion of the wafer W, and supports the peripheral portion of the wafer W (see FIG. 8E).

  Thereafter, the control device 70 controls the third X-direction drive mechanism 65 and the fourth X-direction drive mechanism 67 to move the third set of second support members 20A and 20B and the fourth set of second support members 20C and 20D. While continuing, the first X-direction drive mechanism 55 is controlled to stop the first set of first support members 10A and 10B. As a result, as shown in FIG. 8E, the first set of first support members 10A and 10B retreats from the peripheral edge of the wafer W (separates from the wafer W), and the third set of second support members 20A and 20B The wafer W is supported by the four sets of second support members 20C and 20D. Thereby, the wafer W can be delivered from the first support members 10A to 10D to the second support members 10A to 10D.

Further, the control device 70 controls the first X-direction drive mechanism 55 to return the first set of first support members 10A and 10B detached from the wafer W to the original positions.
Thereafter, the control device 70 controls the third X-direction drive mechanism 65 and the fourth X-direction drive mechanism 67 so that the third set of second support members 20A and 20B and the fourth set of second support members 20C and 20D are provided. Move in the X direction at a constant speed. As a result, the wafer W is carried into the second chamber 2. Then, the wafer W is moved to the processing position of the second chamber 2 (the position shown in FIGS. 1 and 8F).

  When the wafer W is moved to the processing position of the second chamber 2, the control device 70 closes the DIW valve 39, and the first slit discharge port 33 (see FIG. 2) and the second slit discharge port 35 (see FIG. 2). ) Stops DIW discharge. Further, the driving mechanism for driving the first shutter 17 is controlled to close the first shutter 17, and the driving mechanism for driving the second shutter 27 is controlled to close the second shutter 27.

  Thereafter, the control device 70 drives the second nozzle moving mechanism 25 to guide the second slit nozzle 21 to above the wafer W. When the second slit nozzle 21 reaches above the wafer W, the control device 70 opens the dry gas valve 24 and extends from the slit-like second discharge port 22 in the horizontal direction perpendicular to the longitudinal direction of the second discharge port 22. A drying gas is discharged with a curtain-like (strip-like) profile (S4: drying process).

  In this drying process, the control device 70 controls the second nozzle moving mechanism 25 so that the second slit nozzle 21 is within a predetermined moving range along the horizontal direction perpendicular to the longitudinal direction of the second discharge port 22. To move straight. Accordingly, the supply position of the curtain-like (band-like) dry gas from the second slit nozzle 21 moves on the surface of the wafer W, and reciprocates within a range from one end of the wafer W to the peripheral edge of the wafer W. .

  When the reciprocating movement of the dry gas is performed a predetermined number of times, the control device 70 closes the dry gas valve 24 and stops the supply of the dry gas to the surface of the wafer W. Further, the control device 70 controls the second nozzle moving mechanism 25 to return the second slit nozzle 21 to the retracted position on the side of the wafer W. Thereafter, the wafer W is unloaded from the second chamber 2 by a transfer robot (not shown) (step S5).

As described above, according to this embodiment, the four first support members 10 </ b> A to 10 </ b> D are opened and closed between the contact state in which the first support members 10 </ b> A to 10 </ b> D are in contact with the peripheral portion of the wafer W and the retracted state in which the wafer W is retracted from the peripheral portion. The The first support members 10A to 10D are moved in the X direction.
Further, the four second support members 20 </ b> A to 20 </ b> D are opened and closed between a contact state in which the second support members 20 </ b> A to 20 </ b> D are in contact with the peripheral edge of the wafer W and a retracted state in which the wafer W is retracted from the peripheral edge. The second support members 20A to 20D are moved in the X direction.

  Then, the first support members 10A to 10D and / or the second support members 20A to 20D are moved in the X direction while supporting the wafer W, and the first support members 10A to 10D and the second support member 20A. The wafer W is delivered from the four first support members 10A to 10D to the four second support members 20A to 20D by opening and closing between ˜20D and the contact state and the retracted state.

  In the delivery of the wafer W, the wafer W passes through the substrate delivery path 7 provided between the first chamber 1 and the second chamber 2. Then, the first processing unit 31 and the second processing unit 32 perform processing (rinsing processing) using DIW on the wafer W that is passing through the substrate delivery path 7. Therefore, the wafer W can be transferred from the first chamber 1 to the second chamber 2 without using a transfer robot. And the rinse process can be performed to the wafer W currently conveyed.

  The DIW discharged from the first slit discharge port 33 is supplied to the upper surface of the wafer W. Further, DIW discharged from the second slit discharge port 35 is supplied to the lower surface of the wafer W. The DIW supply positions on the upper surface and the lower surface of the wafer W of this substrate are linear shapes extending in the horizontal direction orthogonal to the X direction. Therefore, the wafer W that moves in the X direction at the time of delivery of the wafer W is scanned by the DIW that is discharged linearly. Thereby, the rinsing process can be performed on the entire area of the wafer W.

FIG. 9 is a cross-sectional view schematically showing the configuration of the substrate processing apparatus 200 according to the second embodiment of the present invention. In the second embodiment, portions corresponding to those shown in the embodiment (first embodiment) shown in FIGS. 1 to 8 are denoted by the same reference numerals as those in the first embodiment, and are described. Is omitted.
The substrate processing apparatus 200 shown in FIG. 9 performs cleaning processing (for example, foreign matter removal processing) using a processing fluid (chemical solution, DIW, dry gas, etc.) on the wafer W and confirms the effect of the cleaning processing. This is a single-wafer type device that performs measurement processing for the purpose. The difference between the substrate processing apparatus 200 and the substrate processing apparatus 100 according to the first embodiment is that the wafer W is replaced with the first and second chambers 1 and 2 that perform chemical treatment or drying treatment on the wafer W. On the other hand, the first and second chambers 101 and 102 for measuring the amount of foreign matter (particles) adhering to the surface of the wafer W are provided. Further, instead of the processing unit 3, a chemical processing unit 103, a rinse processing unit 104, and a drying processing unit 105 are provided. In the substrate processing apparatus 200, a series of cleaning processes are performed on the wafer W using the chemical processing unit 103, the rinse processing unit 104, and the drying processing unit 105.

In the substrate processing apparatus 200, the amount of particles adhering to the surface of the wafer W before the cleaning process is measured in the first chamber 101, and the particles adhering to the surface of the wafer W after the cleaning process in the second chamber 101 are measured. Measure the amount. Thereby, the effect of a cleaning process can be confirmed.
The first chamber 101 and the second chamber 102 are arranged next to each other. Between the first chamber 101 and the second chamber 102, a chemical treatment unit 103, a rinse treatment unit 104, and a drying treatment unit 105 are arranged in this order from the first chamber 101 side along the substrate delivery path 7. ing.

In the first chamber 101, a plurality of (for example, four) first support members 10 for supporting the wafer W in a substantially horizontal posture, and a surface of the wafer W supported by the plurality of first support members 10 ( A first particle measuring device 106 for measuring the amount of particles adhering to the upper surface) is accommodated.
In the second chamber 102, a plurality of (for example, four) second support members 20 for supporting the wafer W in a substantially horizontal posture, and a surface of the wafer W supported by the plurality of second support members 20 ( A second particle measuring device 107 for measuring the amount of particles adhering to the upper surface) is accommodated.

The first and second particle measuring devices 106 and 107 are devices for measuring the size and number of particles that are particulate foreign matters existing on the surface of the wafer W. The state is measured based on the reflected light of the laser beam.
As the particle measuring devices 106 and 107, other types of particle measuring devices (particle counters) may be employed. In this case, by setting particles in the entire surface of the wafer W as detection targets, the position of the particles can also be measured.

  The chemical processing unit 103 includes a first chemical processing unit 1031 for performing chemical processing on the upper surface (front surface) of the wafer W passing through the substrate delivery path 7 and a lower surface of the wafer W passing through the substrate delivery path 7. A second chemical processing unit 1032 for performing chemical processing on the (rear surface) is provided, and the same configuration as the processing unit 3 shown in FIGS. 1 and 2 is adopted. The first chemical solution processing unit 1031 and the second chemical solution processing unit 1032 are arranged with the substrate delivery path 7 interposed therebetween.

  The first chemical processing unit 1031 has a first slit discharge port 1033 that faces the upper surface of the wafer W that passes the substrate delivery path 7 and opens linearly along the Y direction. The second chemical processing unit 1032 has a second slit discharge port 1034 that faces the upper surface of the wafer W to which the substrate delivery path 7 is delivered and opens linearly along the Y direction. The configurations of the first slit discharge port 1033 and the first chemical solution processing unit 1031 are the same as those of the first slit discharge port 33 (see FIG. 3) and the first processing unit 31, and thus the description thereof is omitted. Further, the second slit discharge port 1034 and the second chemical liquid processing unit 1032 have the same configuration as the second slit discharge port 35 (see FIG. 3) and the second processing unit 32, and thus the description thereof is omitted. To do.

  A chemical solution from a chemical solution supply source is supplied to the first chemical solution processing unit 1031 and the second chemical solution processing unit 1032 via the chemical solution valve 113. When the chemical liquid valve 113 is opened while the wafer W is passing through the substrate delivery path 7, a curtain-like (band-shaped) chemical liquid along the Y direction is discharged downward from the first slit discharge port 1033, and the upper surface ( The supply position of the linear chemical solution along the Y direction is set on the surface). Further, a curtain-like (band-like) chemical solution along the Y direction is discharged upward from the second slit discharge port 1034, and a supply position of the linear chemical solution along the Y direction is set on the lower surface (back surface) of the wafer W. The

  The rinsing processing unit 104 includes a first rinsing processing unit 1041 for performing a rinsing process on the upper surface (front surface) of the wafer W passing through the substrate delivery path 7, and a lower surface of the wafer W passing through the substrate delivery path 7. A second rinsing processing unit 1042 for performing a rinsing process on the (back surface) is employed, and the same configuration as that of the processing unit 3 shown in FIGS. 1 and 2 is adopted. The first rinse treatment unit 1041 and the second rinse treatment unit 1042 are arranged with the substrate delivery path 7 interposed therebetween.

  The first rinse processing unit 1041 has a first slit discharge port 1043 that faces the upper surface of the wafer W that passes the substrate transfer path 7 and opens linearly along the Y direction. The second rinse processing unit 1042 has a second slit discharge port 1044 that faces the upper surface of the wafer W that passes the substrate transfer path 7 and opens in a straight line along the Y direction. The configurations of the first slit discharge port 1043 and the first rinse processing unit 1041 are the same as those of the first slit discharge port 33 (see FIG. 3) and the first processing unit 31, and thus the description thereof is omitted. The second slit discharge port 1044 and the second rinse processing unit 1042 are configured in common with the second slit discharge port 35 (see FIG. 3) and the second processing unit 32, and thus the description of the portions is omitted. To do.

  DIW from the DIW supply source is supplied to the first rinse processing unit 1041 and the second rinse processing unit 1042 via the DIW valve 114. When the DIW valve 114 is opened while the wafer W is passing through the substrate delivery path 7, curtain-like (band-like) DIW along the Y direction is discharged downward from the first slit discharge port 1043, and the upper surface ( The supply position of the linear DIW along the Y direction is set on the surface). Also, curtain-like (band-like) DIW along the Y direction is discharged upward from the second slit discharge port 1044, and a linear DIW supply position along the Y-direction is set on the lower surface (back surface) of the wafer W. The

  The drying processing unit 105 includes a first drying processing unit 1051 for performing a drying process on the upper surface (front surface) of the wafer W that is passing through the substrate delivery path 7, and the lower surface of the wafer W that is passing through the substrate delivery path 7. A second drying processing unit 1052 for performing a drying process on the (rear surface) is provided, and the same configuration as that of the processing unit 3 shown in FIGS. 1 and 2 is adopted. The first drying processing unit 1051 and the second drying processing unit 1052 are arranged with the substrate delivery path 7 interposed therebetween.

  The first drying processing unit 1051 has a first slit discharge port 1053 that faces the upper surface of the wafer W to which the substrate delivery path 7 is delivered and opens linearly along the Y direction. The second drying processing unit 1052 has a second slit discharge port 1054 that faces the upper surface of the wafer W that passes the substrate delivery path 7 and opens linearly along the Y direction. The configurations of the first slit discharge port 1053 and the first drying processing unit 1051 are the same as those of the first slit discharge port 33 (see FIG. 3) and the first processing unit 31, and thus the description thereof is omitted. Further, the second slit discharge port 1054 and the second drying processing unit 1052 are configured in common with the second slit discharge port 35 (see FIG. 3) and the second processing unit 32, and thus the description thereof is omitted. To do.

  A drying gas from a drying gas supply source is supplied to the first drying processing unit 1051 and the second drying processing unit 1052 via the drying gas valve 115. When the dry gas valve 115 is opened while the wafer W is passing through the substrate delivery path 7, curtain-like (band-like) dry gas along the Y direction is discharged downward from the first slit discharge port 1053, and the upper surface of the wafer W is discharged. The supply position of the linear drying gas along the Y direction is set on the (surface). Further, a curtain-like (band-like) dry gas along the Y direction is discharged upward from the second slit discharge port 1054, and a supply position of the linear dry gas along the Y direction is provided on the lower surface (back surface) of the wafer W. Is set.

FIG. 10 is a block diagram showing an electrical configuration of the substrate processing apparatus 200.
The substrate processing apparatus 200 includes a control device 120 configured to include a microcomputer. The controller 120 includes a first X-direction drive mechanism 55, a second X-direction drive mechanism 57, a first cylinder 56, a second cylinder 58, a first particle measuring device 106, a chemical valve 113, a DIW valve 114, a dry gas valve 115, A third X-direction drive mechanism 65, a fourth X-direction drive mechanism 57, a third cylinder 66, a fourth cylinder 68, a second particle measuring device 107, and the like are connected as control targets.

FIG. 11 is a process diagram showing an example of processing in the substrate processing apparatus 200.
The wafer W to be processed is loaded into the first chamber 101 by a transfer robot (not shown) (step S11), and held by the four first support members 10 with the surface of the wafer W facing upward.
After the wafer W is held on the four first support members 10, the control device 120 controls the first particle measurement device 106 so that the first particle measurement device 106 can detect particles adhered to the surface of the wafer W. Measure the size and number. Then, the measured size and number of particles are stored in a storage unit (not shown) of the first particle measuring device 106.

  After the measurement by the first particle measuring device 106, a series of cleaning processes, that is, a chemical process, a rinse process, and a drying process are performed on the surface of the wafer W. After the particle measurement in step S12, the wafer W is transferred from the first chamber 101 to the second chamber 102. In the substrate processing apparatus 200, the wafer W is transferred from the four first support members 10 to the four second support members 20 (step S13), as in the substrate processing apparatus 100, and the wafer W is transferred by the transfer operation of the wafer W. Is transferred from the first chamber 101 to the second chamber 102. Then, a series of cleaning processes are performed on the wafer W being delivered. Since the delivery operation of the wafer W from the first support member 10 to the second support member 20 is common to the contents of FIGS. 8A to 8F, the description thereof is omitted.

  Prior to the wafer W delivery operation, the control device 120 opens the chemical valve 113, the DIW valve 114, and the dry gas valve 115. Accordingly, the chemical liquid is discharged from the first slit discharge port 1033 and the second slit discharge port 1034, DIW is discharged from the first slit discharge port 1043 and the second slit discharge port 1044, and the first slit discharge port 1053 and the second slit discharge port 1034 are discharged. Dry gas is discharged from the slit discharge port 1054. In addition, the drive mechanism that drives the first shutter 17 is controlled to open the first shutter 17, and the drive mechanism that drives the second shutter 27 is controlled to open the second shutter 27.

During the transfer operation of the wafer W from the first support member 10 to the second support member 20, the wafer W moves through the substrate transfer path 7. Then, on the upper surface (front surface) of the wafer W, in order from the first chamber 101 side, a linear chemical solution supply position along the Y direction, a linear DIW supply position along the Y direction, and a linear shape along the Y direction. The dry gas supply positions are formed at intervals.
Further, on the lower surface (back surface) of the wafer W, in order from the first chamber 101 side, a linear chemical solution supply position along the Y direction, a linear DIW supply position along the Y direction, and a linear shape along the Y direction. The dry gas supply positions are formed at intervals. The interval between the supply position of the linear chemical solution and the supply position of the linear DIW is set to, for example, a size of 15 mm, and the supply position of the linear DIW and the supply position of the linear drying gas For example, the distance between the two is set to a size of 15 mm.

  During the movement of the wafer W, the supply positions of the chemicals on the upper and lower surfaces of the wafer W are orthogonal to the X direction, which is the substrate movement direction, and have the full width of the wafer W (the maximum width in the horizontal direction orthogonal to the X direction). Has a wide range of cleaning forms. Further, during the movement of the wafer W, the supply position of the chemical solution on the upper surface and the lower surface of the wafer W is perpendicular to the X direction which is the substrate movement direction, and the entire width of the wafer W (the maximum width in the horizontal direction perpendicular to the X direction). ). Further, during the movement of the wafer W, the supply position of the chemical solution on the upper surface and the lower surface of the wafer W is perpendicular to the X direction which is the substrate movement direction, and the entire width of the wafer W (the maximum width in the horizontal direction perpendicular to the X direction) ).

  Accordingly, when the wafer W moves in the X direction at a predetermined speed, the entire area of the upper surface and the lower surface of the wafer W is discharged linearly, the supply position discharged linearly, and the linear discharge. Are sequentially scanned by the dry gas. Thereby, in each part of the wafer W, the chemical solution is first supplied, and then DIW is supplied with a delay of a predetermined time, and then the dry gas is supplied with a delay of a predetermined time. Thereby, a series of processes can be performed in the expected order.

  When the wafer W is loaded into the second chamber 102 and the wafer W moves to the processing position (position shown in FIG. 9), the control device 120 closes the chemical solution valve 113, the DIW valve 114, and the dry gas valve 115. Thereby, the discharge of the chemical liquid from the first slit discharge port 1033 and the second slit discharge port 1034 is stopped, the discharge of DIW from the first slit discharge port 1043 and the second slit discharge port 1044 is stopped, and the first slit The discharge of the dry gas from the discharge port 1053 and the second slit discharge port 1054 is stopped. Further, the driving mechanism for driving the first shutter 17 is controlled to close the first shutter 17, and the driving mechanism for driving the second shutter 27 is controlled to close the second shutter 27.

  After the wafer W is held by the four second support members 20, the control device 120 controls the second particle measurement device 107 so that the second particle measurement device 107 can detect particles adhering to the surface of the wafer W. The size and number are measured (step S14). Then, the measured size and number of particles are stored in a storage unit (not shown) of the second particle measuring device 107.

After the measurement by the first particle measuring device 106, the wafer W is unloaded from the second chamber 102 by a transfer robot (not shown) (step S15).
FIG. 12 is a cross-sectional view schematically showing the configuration of the substrate processing apparatus 300 according to the third embodiment of the present invention. In the third embodiment, portions corresponding to those shown in the embodiment (second embodiment) shown in FIGS. 9 to 11 are denoted by the same reference numerals as those in the second embodiment, and will be described. Is omitted.

A substrate processing apparatus 300 shown in FIG. 12 performs an etching process using a processing fluid (such as an etchant as a chemical, DIW, and a dry gas) on the wafer W, and confirms the effect of the etching process. This is a single-wafer type device that performs measurement processing.
The substrate processing apparatus 300 is different from the substrate processing apparatus 100 according to the first embodiment in that the substrate thickness measuring apparatus 201 is replaced with the particle measuring apparatuses 106 and 107 in the first and second chambers 101 and 102. , 202 is accommodated. The substrate thickness measuring apparatuses 201 and 202 measure the thickness of the wafer W. In the substrate thickness measuring apparatuses 201 and 202, for example, the thickness of the wafer W is calculated based on the surface heights of the upper and lower surfaces of the wafer W detected by a non-contact laser sensor.

In addition, an etching solution is discharged as a chemical solution from the first slit discharge port 1033 and the second slit discharge port 1034 of the chemical solution processing unit 103. Examples of the etchant include a hydrofluoric acid nitric acid mixed solution and hydrofluoric acid.
In the substrate processing apparatus 300, the thickness of the wafer W before the etching process is measured in the first chamber 101, and the thickness of the wafer W after the etching process is measured in the second chamber 101. Thereby, the effect of an etching process can be confirmed.

FIG. 13 is a cross-sectional view schematically showing the configuration of a substrate processing apparatus 400 according to the fourth embodiment of the present invention. In the fourth embodiment, parts corresponding to those shown in the embodiment (first embodiment) shown in FIGS. 1 to 8 are denoted by the same reference numerals as those in the first embodiment, and will be described. Is omitted.
The substrate processing apparatus 400 shown in FIG. 13 is different from the substrate processing apparatus 100 according to the first embodiment in that the wafer W is supported in a vertical posture in the first chamber 1 and the second chamber 2. is there. In the first chamber 1, instead of the first support member 10, a plurality of (for example, four) first support members 310 for supporting the peripheral portion of the wafer W and supporting the wafer W in a substantially vertical posture are provided. Contained. Further, in the second chamber 2, instead of the second support member 20, a plurality of (for example, four) second support members for supporting the peripheral portion of the wafer W and supporting the wafer W in a substantially vertical posture. 320 is housed.

The 1st support member 310 is the structure which has arrange | positioned the 1st support member 10 shown in FIG. 3 in the attitude | position in which the center axis line follows a Y direction. The first support member 310 is moved along the vertical direction (Z direction) by the advancing / immersing operation of the corresponding cylinders 56 and 58.
The 2nd support member 320 is the structure which has arrange | positioned the 2nd support member 20 in the attitude | position in which the center axis line follows a Y direction. The second support member 320 is moved along the vertical direction (Z direction) by the advancing / immersing operation of the corresponding cylinders 66 and 68.

  In addition, by moving the four first support members 310 and the four second support members 320 in the X direction, the substrate delivery path between the four first support members 310 and the four second support members 320. 7, the wafer W can be delivered in a vertically oriented state (vertical posture). The substrate delivery path 7 extends along the vertical direction (the direction along the Z direction), and is between the first chamber 1 and the second chamber 1, specifically, the first opening 16 of the first chamber 1 and the first chamber 16. It is formed between the second opening 26 of the two chambers 2.

  The processing unit 403 according to this embodiment is different from the processing unit 3 of the first embodiment in that the wafer W passing through the substrate delivery path 7 in a vertical state (vertical posture) is rinsed. This is the point of processing. Specifically, the processing unit 403 includes a first processing unit 4031 for performing a rinsing process on the surface of the wafer W passing through the substrate delivery path 7 and a back surface of the wafer W passing through the substrate delivery path 7. And a second processing section (not shown) for performing a rinsing process. The first processing unit 4031 and the second processing unit are arranged across the substrate delivery path 7.

The second processing unit is disposed on the opposite side of the first processing unit 4031 and the substrate delivery path 7, and is common to the second processing unit 32 shown in FIG. 2 in this respect. Therefore, the configuration of the second processing unit is omitted.
The first processing unit 4031 opposes the surface of the wafer W transferred in the vertical state (vertical posture) through the substrate transfer path 7, and is vertically upward (Z direction) with respect to the vertical direction (direction along the Z direction). ) Has a slit discharge port 4033 which inclines toward the opposite side to the X direction. The inclination angle of the slit discharge port 4033 with respect to the vertical direction is, for example, 0 ° to 30 °.

  When DIW is supplied to the wafer W transferred in the vertical direction, there is a possibility that the DIW may drip downward on the front surface and / or the back surface of the wafer W. If the dripped DIW is supplied to the front surface and / or the back surface of the wafer W before processing before the DIW discharged from the slit discharge port 4033, the wafer W may be subjected to rinsing processing unevenness. There is.

  On the other hand, in the present embodiment, the slit discharge port 4033 is inclined so as to be directed to the opposite side to the X direction that is the substrate moving direction as it goes vertically upward with respect to the vertical direction. In each region on the back surface, DIW is supplied in order from the bottom in relation to the vertical direction. Therefore, DIW from the slit discharge port 4033 is supplied to each position of the wafer W prior to the DIW dripping. For this reason, a desired process can be performed on the wafer W.

FIG. 14 is a cross-sectional view schematically showing the configuration of a substrate processing apparatus 500 according to the fifth embodiment of the present invention. In the fifth embodiment, parts corresponding to those shown in the embodiment (fourth embodiment) shown in FIG. 13 are denoted by the same reference numerals as those in the fourth embodiment, and description thereof is omitted. .
The substrate processing apparatus 500 shown in FIG. 14 is different from the substrate processing apparatus 400 of the fourth embodiment in that a processing unit 503 for performing a drying process on the wafer W is provided instead of the processing unit 403. is there. Specifically, the processing unit 503 includes a first processing unit 5031 for performing a drying process on the surface of the wafer W that is passing through the substrate delivery path 7, and the back surface of the wafer W that is passing through the substrate delivery path 7. And a second processing unit (not shown) for performing a drying process. The first processing unit 5031 and the second processing unit are arranged with the substrate delivery path 7 interposed therebetween.

The second processing unit is disposed on the opposite side across the first processing unit 5031 and the substrate delivery path 7, and is common to the second processing unit 32 shown in FIG. 2 in this respect. Therefore, the configuration of the second processing unit is omitted.
The first processing unit 5031 opposes the surface of the wafer W transferred in the vertical direction (vertical posture) through the substrate transfer path 7, and is vertically upward (Z direction) with respect to the vertical direction (direction along the Z direction). ) Has a slit discharge port 5033 that inclines in the X direction. The inclination angle of the slit outlet 5033 with respect to the vertical direction is, for example, 0 ° to 30 °.

  Since the slit discharge port 5033 is inclined so as to be directed in the X direction as the substrate moving direction as it goes vertically upward, in each region on the front surface and the back surface of the wafer W, the dry gas in order from the top in relation to the vertical direction. Is supplied. Further, when there is a processing liquid on the front surface and / or back surface of the wafer W, the processing liquid flows from the top to the bottom (liquid dripping). Therefore, at each position on the front surface and / or back surface of the wafer W, the liquid dripping direction and the drying gas supply direction are the same. Therefore, dripping can be suppressed by supplying the dry gas, and thereby drying unevenness can be suppressed.

As mentioned above, although five embodiment of this invention was described, this invention can also be implemented with another form.
For example, in the fourth embodiment, the processing unit 403 that discharges DIW has been described as an example. However, the processing unit may discharge a chemical liquid as a processing liquid.
In each of the above-described embodiments, the configuration in which two processing units are provided as processing units has been described as an example. However, the processing liquid or the processing gas is supplied only to one main surface of the wafer W. Also good.

Further, the first set of first support members and the second set of first support members may each be provided with three or more support members, and the third set of second support members and the fourth set of support members. A configuration in which three or more support members are provided as the second support members in the set may be employed.
In addition, various design changes can be made within the scope of matters described in the claims.

DESCRIPTION OF SYMBOLS 1 1st chamber 2 2nd chamber 3 Processing part 4 Peripheral area | region (peripheral part)
5 Peripheral area (peripheral part)
6 Perimeter end face (peripheral part)
7 substrate delivery path 10 first support member 10A, 10B first set of first substrate support member 10C, 10D second set of first substrate support member 20 second support member 20A, 20B third set of second substrate support member 20C, 20D 4th set of 2nd board | substrate support members 31 1st process part 32 2nd process part 33 1st slit discharge port 35 2nd slit discharge port 55 1st X direction drive mechanism (1st moving means, 1st opening-and-closing means) )
56 First cylinder (first opening / closing means)
57 Second X direction driving mechanism (first moving means, first opening / closing means)
58 Second cylinder (first opening / closing means)
65 3rd X direction drive mechanism (2nd moving means, 2nd opening-and-closing means)
66 Third cylinder (first opening / closing means)
67 4th X direction drive mechanism (2nd moving means, 2nd opening-and-closing means)
68 Fourth cylinder (first opening / closing means)
70 Control device (control means)
DESCRIPTION OF SYMBOLS 100 Substrate processing apparatus 101 1st chamber 102 2nd chamber 103 Chemical solution processing part (processing part)
104 Rinse processing part (processing part)
105 Drying processing unit (processing unit)
120 Control device (control means)
200 Substrate Processing Device 300 Substrate Processing Device 310 First Support Member 320 Second Support Member 400 Substrate Processing Device 403 Processing Unit 500 Substrate Processing Device 503 Processing Unit 1031 First Chemical Solution Processing Unit (First Processing Unit)
1032 Second chemical solution processing unit (second processing unit)
1033 1st slit discharge port 1034 2nd slit discharge port 1041 1st rinse process part (1st process part)
1042 2nd rinse process part (2nd process part)
1043 1st slit discharge port 1044 2nd slit discharge port 1051 1st drying process part (1st process part)
1052 Second drying processing unit (second processing unit)
1053 First slit discharge port 1054 Second slit discharge port 4031 First processing unit 4033 Slit discharge port 5031 First processing unit 5033 Slit discharge port

Claims (7)

A first chamber that houses a plurality of first support members for supporting a peripheral portion of the substrate, and that performs a predetermined process on the substrate supported by the plurality of first support members;
First moving means for moving the first support member in a substrate moving direction along the surface of the substrate;
First opening and closing means for opening and closing the first support member between a contact state in contact with a peripheral portion of the substrate and a retracted state in which the first support member is retracted from the peripheral portion of the substrate;
A substrate disposed adjacent to the first chamber via a predetermined substrate delivery path, containing a plurality of second support members for supporting the peripheral edge of the substrate, and being supported by the plurality of second support members. A second chamber for performing predetermined processing on the second chamber;
Second moving means for moving the second support member in the substrate moving direction;
A second opening / closing means for opening and closing the second support member between a contact state where the second support member is in contact with a peripheral portion of the substrate and a retracted state where the second support member is retracted from the peripheral portion of the substrate;
The first moving means, the second moving means, the first opening and closing means, and the first moving means, such that the substrate supported by the first supporting member is delivered to the second supporting member through the substrate delivery path. 2 control means for controlling the opening and closing means;
Look including a processing unit that performs processing using the processing fluid to the substrate in passing through the substrate transfer passage,
The plurality of first support members each include a first set and a second set each including a plurality of first support members,
The plurality of second support members include a third set and a fourth set each including a plurality of second support members,
The first moving means moves the first set of first support members and the second set of first support members independently in the substrate movement direction;
The first opening / closing means independently opens and closes the first set of first support members and the second set of first support members;
The step of moving the first and second sets of first support members while the control means supports the substrate with the first set of first support members and the second set of first support members; After the substrate is supported by the first set of first support members, the second set of first support members, and the third set of second support members, the second set of first support members is moved away from the substrate. The step of detaching, the first first support member and the third set of second support members are moved while the substrate is supported by the first set of first support members and the third set of second support members. And after supporting the substrate with the first set of first support members, the third set of second support members, and the fourth set of second support members, the first set of first support members A substrate processing apparatus for executing a process of moving and detaching from a substrate. The processing section opens linearly along a direction orthogonal to the substrate moving direction, and passes the processing fluid toward the substrate transferred from the first chamber to the second chamber through the substrate transfer path. It includes a slit discharge port for discharging claim 1 Symbol mounting substrate processing apparatus. The processing unit includes a first processing unit and a second processing unit provided across the substrate delivery path,
The first processing unit is disposed so as to face one main surface of the substrate, and passes a processing fluid toward the substrate transferred from the first chamber to the second chamber through the substrate transfer path. Has a discharge port to discharge,
The second processing unit is disposed so as to face the other main surface of the substrate, and passes a processing fluid toward the substrate transferred from the first chamber to the second chamber through the substrate transfer path. having a discharge port for discharging, the substrate processing apparatus according to claim 1 or 2 wherein. The processing unit has a plurality of discharge ports arranged along the substrate delivery path,
Said plurality of discharge ports, respectively, and directed through the substrate transfer passage from the first chamber to the substrate that is passed into the second chamber, for ejecting different types of treatment fluids with each other, according to claim 1 to 3 The substrate processing apparatus as described in any one of. The first support member includes a first vertical posture support member that supports the substrate in a posture along the vertical direction,
Said second support member includes a second vertical posture supporting member for supporting the posture along the substrate in a vertical direction, the substrate processing apparatus according to any one of claims 1-4. Said first chamber and said second chamber, performs a process using the processing fluid to the substrate, the substrate processing apparatus according to any one of claims 1-5. It said first chamber and said second chamber, in relation to the substrate performs predetermined measurement processing, substrate processing apparatus according to any one of claims 1-5.

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