JP5366076B2 - Electroplating bath for porous plating film containing additive for forming porous plating film - Google Patents

Electroplating bath for porous plating film containing additive for forming porous plating film Download PDF

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JP5366076B2
JP5366076B2 JP2008298201A JP2008298201A JP5366076B2 JP 5366076 B2 JP5366076 B2 JP 5366076B2 JP 2008298201 A JP2008298201 A JP 2008298201A JP 2008298201 A JP2008298201 A JP 2008298201A JP 5366076 B2 JP5366076 B2 JP 5366076B2
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JP2010121194A (en
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誠 堀川
千絵 高橋
茂 大和
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Okuno Chemical Industries Co Ltd
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Abstract

<P>PROBLEM TO BE SOLVED: To provide a method of forming a homogeneous and excellent porous coating film by carrying out an inexpensive process applied to various base materials without using a specific apparatus. <P>SOLUTION: The additive for an electroplating bath for forming the porous plating film comprises a water soluble quaternary ammonium compound having hydrophobic group. The method of forming the porous plating film is carried out by electroplating in the electroplating bath containing the additive. <P>COPYRIGHT: (C)2010,JPO&amp;INPIT

Description

本発明は、多孔質めっき皮膜形成用添加剤及び多孔質めっき皮膜の形成方法に関する。   The present invention relates to an additive for forming a porous plating film and a method for forming a porous plating film.

金属多孔質体は、比表面積の大きさ、優れた物質保持性などから機能性材料として利用価値が高く、その製造法については多くの報告がなされている。   The metal porous body has high utility value as a functional material because of its large specific surface area and excellent substance retention, and many reports have been made on its production method.

例えば、金属多孔質体の製造法としては、微粒金属を焼結させて作製する方法、多孔質樹脂を導電化したのち電解めっきする方法などが一般的な方法である。   For example, as a method for producing a metal porous body, a general method is a method of sintering fine metal, a method of conducting electroplating after making a porous resin conductive, and the like.

しかしながら、これらの方法は何れも特殊な設備を必要とし、得られる金属多孔質体の形態も制限される。   However, these methods all require special equipment, and the form of the metal porous body to be obtained is limited.

また、その他の金属多孔質皮膜の形成方法として、イオン移動度の高い陽イオンと陰イオンとを組み合わせた電解質からなる添加剤を添加した電解液を用いて金属を電着させる方法(特許文献1参照)、アセチレン基含有化合物を含む無電解めっき液を用いて、無電解めっき法によって金属銅皮膜を形成する方法(特許文献2参照)等も報告されている。
特開平6−65779号公報 特開平10−237664号公報
In addition, as another method for forming a metal porous film, a method of electrodepositing a metal using an electrolytic solution to which an additive composed of an electrolyte combining a cation and an anion having high ion mobility is added (Patent Document 1). And a method of forming a metallic copper film by an electroless plating method using an electroless plating solution containing an acetylene group-containing compound (see Patent Document 2) and the like.
JP-A-6-65779 JP-A-10-237664

本発明は、上記した従来技術の現状に鑑みてなされたものであり、その主な目的は、各種の素材に対して適用可能であって、しかも特殊な装置を用いることなく、安価に実施可能な方法によって、均質で良好な多孔質皮膜を形成できる方法を提供することである。   The present invention has been made in view of the current state of the prior art described above, and its main purpose is applicable to various materials and can be implemented at low cost without using a special device. It is an object of the present invention to provide a method capable of forming a uniform and good porous film by such a method.

本発明者は、上記した目的を達成すべく鋭意研究を重ねてきた。その結果、電気めっき法を用いて導電性基材にめっき皮膜を形成する際に、めっき浴中に疎水性基を有する水溶性第4級アンモニウム化合物を添加することによって、均質で良好な多孔質めっき皮膜を容易に形成できることを見出し、ここに本発明を完成するに至った。   The present inventor has intensively studied to achieve the above-described object. As a result, when forming a plating film on a conductive substrate using an electroplating method, a water-soluble quaternary ammonium compound having a hydrophobic group is added to the plating bath to obtain a homogeneous and good porous material. The present inventors have found that a plating film can be easily formed and completed the present invention.

即ち、本発明は、下記の多孔質めっき皮膜形成用添加剤を含有する多孔質めっき皮膜形成用電気めっき浴を提供するものである。
1. 下記一般式
That is, this invention provides the electroplating bath for porous plating film formation containing the following additive for porous plating film formation .
1. The following general formula

Figure 0005366076
Figure 0005366076

(式中、R〜Rは、同一又は異なって、水素原子、アルキル基、アリール基又はアラルキル基であり、Xは陰イオンである。また、R〜Rの内の2個又は3個が結合して窒素原子と共に複素環を形成してもよい。但し、R〜Rの少なくとも一個は、炭素数6以上のアルキル基、アリール基又はアラルキル基である。)で表される疎水性基を有する水溶性第4級アンモニウム化合物からなる多孔質めっき皮膜形成用添加剤を、0.001〜0.1mol/L含有する多孔質めっき皮膜形成用電気めっき浴。 (In the formula, R 1 to R 4 are the same or different and are a hydrogen atom, an alkyl group, an aryl group or an aralkyl group, and X is an anion. In addition, two of R 1 to R 4 Or three of them may combine to form a heterocyclic ring with a nitrogen atom, provided that at least one of R 1 to R 4 is an alkyl group having 6 or more carbon atoms, an aryl group, or an aralkyl group. An electroplating bath for forming a porous plating film containing 0.001 to 0.1 mol / L of an additive for forming a porous plating film made of a water-soluble quaternary ammonium compound having a hydrophobic group.

本発明では、めっき液に配合する添加剤として、疎水性基を有する水溶性第4級アンモニウム化合物を用いる。   In the present invention, a water-soluble quaternary ammonium compound having a hydrophobic group is used as an additive blended in the plating solution.

この様な水溶性第4級アンモニウム化合物を添加した電気めっき浴を用いて、電気めっき法によってめっき皮膜を形成することにより、均質な多孔質構造を有するめっき皮膜を容易に形成できる。   By using such an electroplating bath to which a water-soluble quaternary ammonium compound is added to form a plating film by an electroplating method, a plating film having a homogeneous porous structure can be easily formed.

上記したアンモニウム化合物を添加した電気めっき浴を用いることによって多孔質めっき皮膜を形成できる理由については、必ずしも明確ではないが、次のように推測される。   The reason why the porous plating film can be formed by using the electroplating bath to which the above ammonium compound is added is not necessarily clear, but is presumed as follows.

即ち、上記したアンモニウム化合物は、めっき液中では可溶性のアンモニウムカチオンを形成し、電気めっきを行う際に、陰極に引きつけられて陰極界面で還元分解される。この際に、非水溶性の疎水性置換基を遊離し、その遊離物質は、非水溶性であることから、めっき液中にはほとんど拡散せず陰極の被めっき物表面に残留する。残留した遊離物質は一種のめっきレジストのような働きをし、その部分のめっき皮膜成長を妨げる。その結果、微細な孔を多数有するめっき皮膜が形成されるものと考えられる。   That is, the above-described ammonium compound forms a soluble ammonium cation in the plating solution, and is attracted to the cathode during electroplating and is reduced and decomposed at the cathode interface. At this time, the water-insoluble hydrophobic substituent is liberated, and the liberated substance is water-insoluble, so that it hardly diffuses in the plating solution and remains on the surface of the object to be plated. The remaining free substance acts like a kind of plating resist and hinders the growth of the plating film in that portion. As a result, it is considered that a plating film having many fine holes is formed.

本発明で用いる疎水性基を有する水溶性第4級アンモニウム化合物については、特に限定的ではなく、窒素原子に結合した置換基の少なくとも一個が疎水性基である水溶性を有する第4級アンモニウム化合物であればよい。水溶性を有するアンモニウム化合物の種類としては、例えば、塩化物、臭化物などのハロゲン化物、水酸化物、硫酸塩、硝酸塩等を挙げることができる。また、水溶性を有するピリジニウム塩等の複素環構造を有する化合物も第4級アンモニウム化合物に含まれる。   The water-soluble quaternary ammonium compound having a hydrophobic group used in the present invention is not particularly limited, and has a water-solubility quaternary ammonium compound in which at least one substituent bonded to a nitrogen atom is a hydrophobic group. If it is. Examples of the water-soluble ammonium compound include halides such as chlorides and bromides, hydroxides, sulfates, nitrates, and the like. In addition, a compound having a heterocyclic structure such as a water-soluble pyridinium salt is also included in the quaternary ammonium compound.

本発明で用いる疎水性基を有する水溶性第4級アンモニウム化合物の好ましい例として、下記一般式   As a preferable example of the water-soluble quaternary ammonium compound having a hydrophobic group used in the present invention, the following general formula

Figure 0005366076
Figure 0005366076

(式中、R〜Rは、同一又は異なって、水素原子、アルキル基、アリール基又はアラルキル基であり、Xは、陰イオンである。また、R〜Rの内の2個又は3個が結合して窒素原子と共に複素環を形成してもよい。但し、R〜Rの少なくとも一個は、炭素数6以上のアルキル基、アリール基又はアラルキル基である。)で表される4級アンモニウム化合物を挙げることができる。 (In the formula, R 1 to R 4 are the same or different and are a hydrogen atom, an alkyl group, an aryl group or an aralkyl group, and X is an anion. In addition, 2 in R 1 to R 4 Or 3 or 3 may combine to form a heterocyclic ring with a nitrogen atom, provided that at least one of R 1 to R 4 is an alkyl group having 6 or more carbon atoms, an aryl group, or an aralkyl group. The quaternary ammonium compound represented can be mentioned.

上記したアンモニウム化合物において、アルキル基としては、例えば、メチル、エチル、n−プロピル、イソプロピル、n−ブチル、イソブチル、sec−ブチル、tert−ブチル、ペンチル、ヘキシル、ヘプチル、オクチル、ノニル、デシル、ウンデシル、ドデシル、トリデシル、テトラデシル、ペンタデシル、ヘキサデシル、ヘプタデシル、オクタデシルなどの直鎖又は分枝を有するC〜C20アルキル基が挙げられる。これらの内で、炭素数が6以上のアルキル基としては、ヘキシル、ヘプチル、オクチル、ノニル、デシル、ウンデシル、ドデシル、トリデシル、テトラデシル、ペンタデシル、ヘキサデシル、ヘプタデシル、オクタデシルなどを例示できる。 In the above ammonium compound, examples of the alkyl group include methyl, ethyl, n-propyl, isopropyl, n-butyl, isobutyl, sec-butyl, tert-butyl, pentyl, hexyl, heptyl, octyl, nonyl, decyl, undecyl. , Dodecyl, tridecyl, tetradecyl, pentadecyl, hexadecyl, heptadecyl, octadecyl and the like C 1 -C 20 alkyl group having a straight chain or a branch. Among these, examples of the alkyl group having 6 or more carbon atoms include hexyl, heptyl, octyl, nonyl, decyl, undecyl, dodecyl, tridecyl, tetradecyl, pentadecyl, hexadecyl, heptadecyl, octadecyl and the like.

アリール基としては、例えば、フェニル基、ナフチル基等が例示される。アリール基には、フッ素原子、塩素原子等のハロゲン原子;メチル、エチル等のアルキル基;トリフルオロメチル等のハロアルキル基;メトキシ、エトキシ等のアルコキシ基;フェニル等のアリール基等の置換基が結合していてもよい。置換基の数及び置換位置については特に限定はなく、本発明の効果が妨げられない範囲であればよい。   Examples of the aryl group include a phenyl group and a naphthyl group. Aryl groups such as fluorine and chlorine atoms; alkyl groups such as methyl and ethyl; haloalkyl groups such as trifluoromethyl; alkoxy groups such as methoxy and ethoxy; and substituents such as aryl groups such as phenyl are bonded to the aryl group. You may do it. The number of substituents and the substitution position are not particularly limited, and may be in a range that does not hinder the effects of the present invention.

アラルキル 基としては、例えば、2−フェニルエチル、ベンジル、1−フェニルエチル、3−フェニルプロピル、4−フェニルブチル等のC〜C10アラルキル 基などが挙げられる。アラルキル基にもアリール基と同様の置換基が結合していても良い。 Examples of the aralkyl group include C 7 to C 10 aralkyl groups such as 2-phenylethyl, benzyl, 1-phenylethyl, 3-phenylpropyl, 4-phenylbutyl, and the like. The same substituent as the aryl group may be bonded to the aralkyl group.

〜Rの内の2個又は3個が結合して窒素原子と共に複素環を形成した化合物としては、ビリジニウム環を有する化合物等を例示できる。 Examples of the compound in which two or three of R 1 to R 4 are bonded to form a heterocyclic ring with a nitrogen atom include compounds having a biridinium ring.

で表される陰イオンとしては、水溶性のアンモニウム化合物を形成し得るものであればよく、例えば、Cl、Br、(SO 2−1/2、OH、NO 等を例示できる。 The anion represented by X may be any anion that can form a water-soluble ammonium compound. For example, Cl , Br , (SO 4 2− ) 1/2 , OH , NO 3 Etc. can be illustrated.

上記したアンモニウム化合物では、R〜Rの内の少なくとも一個は、炭素数6以上のアルキル基、アリール基又はアラルキル基であることが必要である。 In the above-described ammonium compound, at least one of R 1 to R 4 needs to be an alkyl group having 6 or more carbon atoms, an aryl group, or an aralkyl group.

本発明で使用できるアンモニウム化合物の具体例としては、ドデシルトリメチルアンモニウムクロライド、テトラデシルトリメチルアンモニウムクロライド、ヘキサデシルトリメチルアンモニウムクロライド、オクタデシルトリメチルアンモニウムクロライド、フェニルトリメチルアンモニウムクロライド、ベンジルトリメチルアンモニウムクロライド、ベンジルトリエチルアンモニウムクロライド、ベンジルトリブチルアンモニウムクロライド、ジデシルジメチルアンモニウムクロライド、ドデシルジメチルベンジルアンモニウムクロライド、テトラデシルジメチルベンジルアンモニウムクロライド、オクタデシルジメチルベンジルアンモニウムクロライド、トリオクチルメチルアンモニウムクロライド、ドデシルピリジニウムクロライド、ベンジルピリジニウムクロライド、これらの臭化物、硫酸塩などを例示できる。これらのアンモニウム化合物は一種単独又は二種以上混合して用いることができる。   Specific examples of ammonium compounds that can be used in the present invention include dodecyltrimethylammonium chloride, tetradecyltrimethylammonium chloride, hexadecyltrimethylammonium chloride, octadecyltrimethylammonium chloride, phenyltrimethylammonium chloride, benzyltrimethylammonium chloride, benzyltriethylammonium chloride, Benzyltributylammonium chloride, didecyldimethylammonium chloride, dodecyldimethylbenzylammonium chloride, tetradecyldimethylbenzylammonium chloride, octadecyldimethylbenzylammonium chloride, trioctylmethylammonium chloride, dodecylpyridinium chloride Benzyl pyridinium chloride, these bromides, etc. sulfates can be exemplified. These ammonium compounds can be used singly or in combination of two or more.

本発明では、めっき液中におけるアンモニウム化合物の添加量については、特に限定的ではないが、添加量が少ないと、充分な数の孔が得られないために良好な多孔質皮膜を形成できず、一方、添加量が多すぎる場合には、析出ムラが起こり均一な皮膜を得ることが難しくなる。このため、めっき液中におけるアンモニウム化合物の添加量は、0.001〜0.1mol/L程度とすることが好ましく、0.005〜0.05mol/L程度とすることがより好ましい。   In the present invention, the addition amount of the ammonium compound in the plating solution is not particularly limited, but if the addition amount is small, a sufficient number of pores cannot be obtained, so a good porous film cannot be formed, On the other hand, when the addition amount is too large, precipitation unevenness occurs and it becomes difficult to obtain a uniform film. For this reason, the addition amount of the ammonium compound in the plating solution is preferably about 0.001 to 0.1 mol / L, and more preferably about 0.005 to 0.05 mol / L.

本発明で使用できるめっき浴の種類については特に限定はなく、各種の公知の電気めっき浴に対して上記した第4級アンモニウム化合物を添加することによって、均質で良好な多孔質めっき皮膜を形成できる。この様なめっき液としては、ワット浴、ウッド浴、スルファミン酸ニッケル浴、有機酸ニッケル浴などの電気ニッケルめっき浴の他に、硫酸銅浴、ピロリン酸銅浴、硫酸スズ浴、メタンスルホン酸スズ浴、塩化亜鉛浴、硫酸亜鉛浴、各種合金めっき浴などを例示できる。   There are no particular limitations on the type of plating bath that can be used in the present invention. By adding the quaternary ammonium compound described above to various known electroplating baths, a uniform and good porous plating film can be formed. . Such plating solutions include electroplating nickel baths such as watt bath, wood bath, nickel sulfamate bath, organic acid nickel bath, copper sulfate bath, copper pyrophosphate bath, tin sulfate bath, tin methanesulfonate Examples thereof include a bath, a zinc chloride bath, a zinc sulfate bath, and various alloy plating baths.

これらの電気めっき浴の組成については、特に限定はなく、公知のめっき浴と同様の組成とすればよい。   The composition of these electroplating baths is not particularly limited and may be the same as that of known plating baths.

以下、本発明の多孔質めっき皮膜の形成方法に適用できるニッケルめっき浴の好ましい組成範囲及びめっき条件を記載する。   Hereinafter, a preferable composition range and plating conditions of a nickel plating bath applicable to the method for forming a porous plating film of the present invention will be described.

1.ワット浴の組成及びめっき条件
硫酸ニッケル〔NiSO4・6H2O〕 200〜380g/L
塩化ニッケル〔NiCl2・6H2O〕 30〜70g/L
ホウ酸 〔H3BO3〕 30〜45g/L
pH 3.0〜4.8
浴温 40〜70℃
陰極電流密度 0.5〜10A/dm2
2.スルファミン酸浴の組成及びめっき条件
スルファミン酸ニッケル〔Ni(NH2SO3)2・4H2O〕 300〜500g/L
塩化ニッケル〔NiCl2・6H2O〕 0〜30g/L
臭化ニッケル〔NiBr2・3H20〕 10〜12g/L
ホウ酸 〔H3BO3〕 30〜50g/L
pH 3.5〜4.5
浴温 25〜70℃
陰極電流密度 2〜40A/dm2
3.クエン酸浴の組成及びめっき条件
硫酸ニッケル〔NiSO4・6H2O〕 200〜380g/L
塩化ニッケル〔NiCl2・6H2O〕 30〜70g/L
クエン酸 12〜21g/L
または
クエン酸3ナトリウム 24〜30g/L
pH 3.0〜5.0
浴温 40〜70℃
陰極電流密度 0.5〜10A/dm2
4.ウッド浴の組成及びめっき条件
塩化ニッケル〔NiCl2・6H2O〕 200〜300g/L
35%塩酸 50〜150ml/L
浴温 20〜30 ℃
陰極電流密度 5〜10A/dm2
また、銅めっき浴の一例として、ピロリン酸銅浴の好ましい組成範囲及びめっき条件を記載する。
5.ピロリン酸銅浴のめっき条件 範囲
ピロリン酸銅〔Cu2P207・3H2O〕 70〜110g/L
ピロリン酸カリウム〔K4P207〕 260〜400g/L
28%アンモニア水 〔NH4OH〕 2〜4ml/L
P比(P207/Cu) 6.5〜8.0
pH 8.2〜8.9
浴温 50〜60℃
陰極電流密度 0.5〜5A/dm2
1. Watt bath composition and plating conditions
Nickel sulfate (NiSO 4・ 6H 2 O) 200 ~ 380g / L
Nickel chloride [NiCl 2・ 6H 2 O] 30 ~ 70g / L
Boric acid [H 3 BO 3 ] 30-45 g / L
pH 3.0-4.8
Bath temperature 40-70 ° C
Cathode current density 0.5-10A / dm 2
2. Composition and plating conditions of sulfamic acid bath
Nickel sulfamate [Ni (NH 2 SO 3 ) 2 / 4H 2 O] 300 to 500 g / L
Nickel chloride [NiCl 2・ 6H 2 O] 0 ~ 30g / L
Nickel bromide [NiBr 2・ 3H 2 0] 10-12g / L
Boric acid [H 3 BO 3 ] 30-50g / L
pH 3.5-4.5
Bath temperature 25-70 ° C
Cathode current density 2 ~ 40A / dm 2
3. Citric acid bath composition and plating conditions
Nickel sulfate (NiSO 4・ 6H 2 O) 200 ~ 380g / L
Nickel chloride [NiCl 2・ 6H 2 O] 30 ~ 70g / L
Citric acid 12-21g / L
Or Trisodium citrate 24-30g / L
pH 3.0-5.0
Bath temperature 40-70 ° C
Cathode current density 0.5-10A / dm 2
4). Wood bath composition and plating conditions
Nickel chloride (NiCl 2・ 6H 2 O) 200 ~ 300g / L
35% hydrochloric acid 50-150ml / L
Bath temperature 20-30 ℃
Cathode current density 5 ~ 10A / dm 2
Moreover, the preferable composition range and plating conditions of a copper pyrophosphate bath are described as an example of a copper plating bath.
5. Plating conditions for copper pyrophosphate bath Range
Copper pyrophosphate [Cu 2 P 2 0 7・ 3H 2 O] 70 to 110 g / L
Potassium pyrophosphate [K 4 P 2 0 7 ] 260-400 g / L
28% ammonia water [NH 4 OH] 2-4ml / L
P ratio (P 2 0 7 / Cu) 6.5 to 8.0
pH 8.2-8.9
Bath temperature 50-60 ℃
Cathode current density 0.5-5A / dm 2

本発明によれば、各種の電気めっき浴を用いて、電気めっき処理という比較的簡単な方法によって、特殊な設備を要することなく、均質で良好な多孔質皮膜を形成できる。   According to the present invention, a uniform and good porous film can be formed using various electroplating baths by a relatively simple method called electroplating without requiring special equipment.

以下、実施例を挙げて本発明を更に詳細に説明する。   Hereinafter, the present invention will be described in more detail with reference to examples.

実施例1
硫酸ニッケル280g/L、塩化ニッケル45g/L、及びホウ酸40g/Lを含有するpH4.2の水溶液からなるワット浴にドデシルトリメチルアンモニウムクロライドを0.02mol/L添加して、多孔質めっき皮膜形成用のニッケルめっき浴を調製した。
Example 1
For the formation of a porous plating film by adding 0.02 mol / L of dodecyltrimethylammonium chloride to a watt bath composed of an aqueous solution of pH 4.2 containing nickel sulfate 280 g / L, nickel chloride 45 g / L, and boric acid 40 g / L A nickel plating bath was prepared.

被めっき物として、ワット浴を用いて厚さ3μmのストライクニッケル皮膜を形成した鋼板を用い、これを上記した多孔質めっき皮膜形成用のニッケルめっき浴に浸漬して、空気撹拌下に、液温50℃、陰極電流密度5A/dm2で1分間めっきを行った。 As the object to be plated, a steel plate on which a strike nickel film having a thickness of 3 μm was formed using a Watt bath was immersed in the above-described nickel plating bath for forming a porous plating film. Plating was performed at 50 ° C. and a cathode current density of 5 A / dm 2 for 1 minute.

めっき後の試験片には撥水性が認められ、ドデシルトリメチルアンモニウムクロライドより遊離した非水溶性物質の残留が確認できた。試験片を純水で十分に洗浄後、加熱乾燥しためっき皮膜表面の走査型電子顕微鏡写真を図1に示す。図1から明らかなように、めっき皮膜の表面に多数の微細孔が認められ、多孔質ニッケルめっき皮膜が形成されたことが確認できた。   The test piece after plating showed water repellency, and it was confirmed that a water-insoluble substance released from dodecyltrimethylammonium chloride remained. FIG. 1 shows a scanning electron micrograph of the surface of the plating film that has been thoroughly washed with pure water and then dried by heating. As is clear from FIG. 1, a large number of micropores were observed on the surface of the plating film, and it was confirmed that a porous nickel plating film was formed.

実施例2
実施例1と同様のワット浴に、ドデシルジメチルベンジルアンモニウムクロライドを0.03mol/L添加して多孔質めっき皮膜形成用のニッケルめっき浴を調製した。
Example 2
A nickel plating bath for forming a porous plating film was prepared by adding 0.03 mol / L of dodecyldimethylbenzylammonium chloride to the same Watt bath as in Example 1.

被めっき物としては、実施例1と同様の3μmのストライクニッケル皮膜を形成した鋼板を用い、これを上記した多孔質めっき皮膜形成用のニッケルめっき浴に浸漬して、無撹拌で、液温55℃、陰極電流密度2A/dm2で3分間めっきを行った。 As the object to be plated, a steel plate on which a 3 μm strike nickel film similar to that in Example 1 was formed was immersed in the above-described nickel plating bath for forming a porous plating film, and the liquid temperature was 55 without stirring. Plating was carried out at a cathode current density of 2 A / dm 2 for 3 minutes.

めっき後の試験片には撥水性が認められ、ドデシルジメチルベンジルアンモニウムクロライドより遊離した非水溶性物質の残留が確認できた。試験片を純水で十分に洗浄後、加熱乾燥しためっき皮膜表面の走査型電子顕微鏡写真を図2に示す。図2から明らかなように、めっき皮膜の表面に多数の微細孔が認められ、多孔質ニッケルめっき皮膜が形成されたことが確認できた。   The test piece after plating showed water repellency, and it was confirmed that a water-insoluble substance remained free from dodecyldimethylbenzylammonium chloride. FIG. 2 shows a scanning electron micrograph of the surface of the plating film that has been thoroughly washed with pure water and then dried by heating. As is clear from FIG. 2, a large number of micropores were observed on the surface of the plating film, and it was confirmed that a porous nickel plating film was formed.

実施例3
スルファミン酸ニッケル450g/L、臭化ニッケル10g/L及びホウ酸30g/Lを含むpH4.0の水溶液からなるスルファミン酸ニッケル浴に、ベンジルトリエチルアンモニウムクロライドを0.05mol/L添加して多孔質めっき皮膜形成用のニッケルめっき浴を調製した。
Example 3
Porous plating film by adding 0.05 mol / L of benzyltriethylammonium chloride to nickel sulfamate bath consisting of aqueous solution of pH 4.0 containing nickel sulfamate 450g / L, nickel bromide 10g / L and boric acid 30g / L A forming nickel plating bath was prepared.

被めっき物としては、実施例1と同様の3μmのストライクニッケル皮膜を形成した鋼板を用い、これを上記した多孔質めっき皮膜形成用のニッケルめっき浴に浸漬して、空気撹拌下に、液温45℃、陰極電流密度3A/dm2で2分間めっきを行った。 As the object to be plated, a steel plate on which a strike nickel film of 3 μm similar to that in Example 1 was used was immersed in the above-described nickel plating bath for forming a porous plating film, and the liquid temperature was kept under air agitation. Plating was performed at 45 ° C. and a cathode current density of 3 A / dm 2 for 2 minutes.

めっき後の試験片には撥水性が認められ、ベンジルトリエチルアンモニウムクロライドより遊離した非水溶性物質の残留が確認できた。試験片を純水で十分に洗浄後、加熱乾燥しためっき皮膜表面の走査型電子顕微鏡写真を図3に示す。図3から明らかなように、めっき皮膜の表面に多数の微細孔が認められ、多孔質ニッケルめっき皮膜が形成されたことが確認できた。   The test piece after plating showed water repellency, and it was confirmed that a water-insoluble substance was released from benzyltriethylammonium chloride. FIG. 3 shows a scanning electron micrograph of the surface of the plating film that has been thoroughly washed with pure water and then dried by heating. As is clear from FIG. 3, a large number of micropores were observed on the surface of the plating film, and it was confirmed that a porous nickel plating film was formed.

実施例4
硫酸ニッケル280g/L、塩化ニッケル45g/L、及びクエン酸21g/Lを含むpH4.0の水溶液からなるクエン酸塩浴に、ベンジルピリジニウムクロライドを0.1mol/L添加して多孔質めっき皮膜形成用のニッケルめっき浴を調製した。
Example 4
For forming a porous plating film by adding 0.1 mol / L of benzylpyridinium chloride to a citrate bath consisting of an aqueous solution of pH 4.0 containing 280 g / L of nickel sulfate, 45 g / L of nickel chloride, and 21 g / L of citric acid A nickel plating bath was prepared.

被めっき物としては、実施例1と同様の3μmのストライクニッケル皮膜を形成した鋼板を用い、これを上記した多孔質めっき皮膜形成用のニッケルめっき浴に浸漬して、無撹拌で、液温50℃、陰極電流密度3A/dm2で5分間めっきを行った。 As the object to be plated, a steel plate with a 3 μm strike nickel film similar to that used in Example 1 was used. The steel sheet was immersed in the above-described nickel plating bath for forming a porous plating film. Plating was carried out for 5 minutes at a cathode current density of 3 A / dm 2 at ° C.

めっき後の試験片には撥水性が認められ、ベンジルピリジニウムクロライドより遊離した非水溶性物質の残留が確認できた。試験片を純水で十分に洗浄後、加熱乾燥しためっき皮膜表面の走査型電子顕微鏡写真を図4に示す。図4から明らかなように、めっき皮膜の表面に多数の微細孔が認められ、多孔質ニッケルめっき皮膜が形成されたことが確認できた。   The test piece after plating showed water repellency, and it was confirmed that water-insoluble substances released from benzylpyridinium chloride remained. FIG. 4 shows a scanning electron micrograph of the surface of the plating film that has been thoroughly washed with pure water and then dried by heating. As is clear from FIG. 4, a large number of micropores were observed on the surface of the plating film, and it was confirmed that a porous nickel plating film was formed.

実施例5
実施例1と同様のワット浴に、フェニルトリメチルアンモニウムクロライドを0.01mol/L添加して多孔質めっき皮膜形成用のニッケルめっき浴を調製した。
Example 5
A nickel plating bath for forming a porous plating film was prepared by adding 0.01 mol / L of phenyltrimethylammonium chloride to the same Watt bath as in Example 1.

被めっき物としては、実施例1と同様の3μmのストライクニッケル皮膜を形成した鋼板を用い、これを上記した多孔質めっき皮膜形成用のニッケルめっき浴に浸漬して、無撹拌で、液温55℃、陰極電流密度5A/dm2で1分間めっきを行った。 As the object to be plated, a steel plate on which a 3 μm strike nickel film similar to that in Example 1 was formed was immersed in the above-described nickel plating bath for forming a porous plating film, and the liquid temperature was 55 without stirring. Plating was performed for 1 minute at a cathode current density of 5 A / dm 2 at ° C.

めっき後の試験片には撥水性が認められ、フェニルトリメチルアンモニウムクロライドより遊離した非水溶性物質の残留が確認できた。試験片を純水で十分に洗浄後、加熱乾燥しためっき皮膜表面の走査型電子顕微鏡写真を図5に示す。図5から明らかなように、めっき皮膜の表面に多数の微細孔が認められ、多孔質ニッケルめっき皮膜が形成されたことが確認できた。   The test piece after plating showed water repellency, and it was confirmed that water-insoluble substances remaining from phenyltrimethylammonium chloride remained. FIG. 5 shows a scanning electron micrograph of the surface of the plating film that has been thoroughly washed with pure water and then dried by heating. As is clear from FIG. 5, a large number of micropores were observed on the surface of the plating film, and it was confirmed that a porous nickel plating film was formed.

実施例6
ピロリン酸銅94g/L、ピロリン酸カリウム340g/L及び28%アンモニア水3ml/Lを含むpH8.8の水溶液からなるピロリン酸銅浴に、ポリリン酸で中和したベンジルトリメチルアンモニウムヒドロキシド0.05mol/Lを添加して多孔質めっき皮膜形成用の銅めっき浴を調整した。被めっき物としては圧延銅板を用い、これを上記した多孔質めっき皮膜形成用の銅めっき浴に浸漬して、無攪拌で、液温55℃、陰極電流密度3A/dm2で1分間めっきを行った。
Example 6
Benzyltrimethylammonium hydroxide 0.05 mol / neutralized with polyphosphoric acid in a copper pyrophosphate bath consisting of an aqueous solution of pH 8.8 containing copper pyrophosphate 94 g / L, potassium pyrophosphate 340 g / L and 28% aqueous ammonia 3 ml / L L was added to prepare a copper plating bath for forming a porous plating film. As the object to be plated, a rolled copper plate is used, which is immersed in the copper plating bath for forming the above-mentioned porous plating film and plated for 1 minute at a liquid temperature of 55 ° C. and a cathode current density of 3 A / dm 2 without stirring. went.

めっき後の試験片には撥水性が認められ、ベンジルトリメチルアンモニウムヒドロキシドより遊離した非水溶性物質の残留が確認できた。試験片を純水で充分に洗浄後、加熱乾燥しためっき皮膜表面の走査型電子顕微鏡写真を図6に示す。図6から明らかなように、めっき皮膜の表面に多数の微細孔が認められ、多孔質銅めっき皮膜が形成されたことが確認できた。   The test piece after plating showed water repellency, and it was confirmed that a water-insoluble substance was released from benzyltrimethylammonium hydroxide. FIG. 6 shows a scanning electron micrograph of the surface of the plating film that has been thoroughly washed with pure water and then dried by heating. As is apparent from FIG. 6, a large number of micropores were observed on the surface of the plating film, and it was confirmed that a porous copper plating film was formed.

実施例1で得られた多孔質ニッケルめっき皮膜表面の走査型電子顕微鏡写真。The scanning electron micrograph of the surface of the porous nickel plating film obtained in Example 1. 実施例2で得られた多孔質ニッケルめっき皮膜表面の走査型電子顕微鏡写真。3 is a scanning electron micrograph of the surface of the porous nickel plating film obtained in Example 2. FIG. 実施例3で得られた多孔質ニッケルめっき皮膜表面の走査型電子顕微鏡写真。4 is a scanning electron micrograph of the surface of the porous nickel plating film obtained in Example 3. FIG. 実施例4で得られた多孔質ニッケルめっき皮膜表面の走査型電子顕微鏡写真。A scanning electron micrograph of the surface of the porous nickel plating film obtained in Example 4. 実施例5で得られた多孔質ニッケルめっき皮膜表面の走査型電子顕微鏡写真。4 is a scanning electron micrograph of the surface of the porous nickel plating film obtained in Example 5. FIG. 実施例6で得られた多孔質ニッケルめっき皮膜表面の走査型電子顕微鏡写真。The scanning electron micrograph of the surface of the porous nickel plating film obtained in Example 6.

Claims (1)

下記一般式
Figure 0005366076
(式中、R〜Rは、同一又は異なって、水素原子、アルキル基、アリール基又はアラルキル基であり、Xは陰イオンである。また、R〜Rの内の2個又は3個が結合して窒素原子と共に複素環を形成してもよい。但し、R〜Rの少なくとも一個は、炭素数6以上のアルキル基、アリール基又はアラルキル基である。)で表される疎水性基を有する水溶性第4級アンモニウム化合物からなる多孔質めっき皮膜形成用添加剤を、0.001〜0.1mol/L含有する多孔質めっき皮膜形成用電気めっき浴。
The following general formula
Figure 0005366076
(In the formula, R 1 to R 4 are the same or different and are a hydrogen atom, an alkyl group, an aryl group or an aralkyl group, and X is an anion. In addition, two of R 1 to R 4 Or three of them may combine to form a heterocyclic ring with a nitrogen atom, provided that at least one of R 1 to R 4 is an alkyl group having 6 or more carbon atoms, an aryl group, or an aralkyl group. An electroplating bath for forming a porous plating film containing 0.001 to 0.1 mol / L of an additive for forming a porous plating film made of a water-soluble quaternary ammonium compound having a hydrophobic group.
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