GB2441531A - Liquid crystal templated deposition method - Google Patents
Liquid crystal templated deposition method Download PDFInfo
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- GB2441531A GB2441531A GB0617741A GB0617741A GB2441531A GB 2441531 A GB2441531 A GB 2441531A GB 0617741 A GB0617741 A GB 0617741A GB 0617741 A GB0617741 A GB 0617741A GB 2441531 A GB2441531 A GB 2441531A
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- metal
- mixture
- surfactant
- liquid crystal
- compound
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- 239000004973 liquid crystal related substance Substances 0.000 title claims abstract description 52
- 238000000151 deposition Methods 0.000 title claims description 16
- 229910052751 metal Inorganic materials 0.000 claims abstract description 51
- 239000002184 metal Substances 0.000 claims abstract description 51
- 239000000203 mixture Substances 0.000 claims abstract description 41
- 239000004094 surface-active agent Substances 0.000 claims abstract description 26
- 150000002736 metal compounds Chemical class 0.000 claims abstract description 22
- 150000003839 salts Chemical class 0.000 claims abstract description 21
- LZZYPRNAOMGNLH-UHFFFAOYSA-M Cetrimonium bromide Chemical compound [Br-].CCCCCCCCCCCCCCCC[N+](C)(C)C LZZYPRNAOMGNLH-UHFFFAOYSA-M 0.000 claims abstract description 14
- 239000002563 ionic surfactant Substances 0.000 claims abstract description 13
- 125000004432 carbon atom Chemical group C* 0.000 claims abstract description 9
- 239000002904 solvent Substances 0.000 claims abstract description 9
- 230000008021 deposition Effects 0.000 claims abstract description 8
- FJLUATLTXUNBOT-UHFFFAOYSA-N 1-Hexadecylamine Chemical compound CCCCCCCCCCCCCCCCN FJLUATLTXUNBOT-UHFFFAOYSA-N 0.000 claims abstract description 4
- DBMJMQXJHONAFJ-UHFFFAOYSA-M Sodium laurylsulphate Chemical compound [Na+].CCCCCCCCCCCCOS([O-])(=O)=O DBMJMQXJHONAFJ-UHFFFAOYSA-M 0.000 claims abstract description 4
- 230000000052 comparative effect Effects 0.000 claims abstract description 4
- DDXLVDQZPFLQMZ-UHFFFAOYSA-M dodecyl(trimethyl)azanium;chloride Chemical compound [Cl-].CCCCCCCCCCCC[N+](C)(C)C DDXLVDQZPFLQMZ-UHFFFAOYSA-M 0.000 claims abstract description 4
- 150000004668 long chain fatty acids Chemical class 0.000 claims abstract description 3
- 235000019333 sodium laurylsulphate Nutrition 0.000 claims abstract description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 64
- 229910052759 nickel Inorganic materials 0.000 claims description 29
- 150000001875 compounds Chemical class 0.000 claims description 25
- 238000000034 method Methods 0.000 claims description 25
- 239000010941 cobalt Substances 0.000 claims description 15
- 229910017052 cobalt Inorganic materials 0.000 claims description 15
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 15
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 8
- 239000000956 alloy Substances 0.000 claims description 7
- 229910045601 alloy Inorganic materials 0.000 claims description 7
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 claims description 7
- 229910052753 mercury Inorganic materials 0.000 claims description 7
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 5
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 5
- 229910052802 copper Inorganic materials 0.000 claims description 5
- 239000010949 copper Substances 0.000 claims description 5
- -1 dioctyl sodium Chemical compound 0.000 claims description 5
- 239000011135 tin Substances 0.000 claims description 5
- 229910052718 tin Inorganic materials 0.000 claims description 5
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 4
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 claims description 4
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 4
- 229910052793 cadmium Inorganic materials 0.000 claims description 4
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 claims description 4
- 229910052742 iron Inorganic materials 0.000 claims description 4
- 239000011133 lead Substances 0.000 claims description 4
- 229910052711 selenium Inorganic materials 0.000 claims description 4
- 239000011669 selenium Substances 0.000 claims description 4
- 229910052725 zinc Inorganic materials 0.000 claims description 4
- 239000011701 zinc Substances 0.000 claims description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 239000010931 gold Substances 0.000 claims description 3
- 125000003010 ionic group Chemical group 0.000 claims description 3
- 229910052697 platinum Inorganic materials 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 2
- 150000001450 anions Chemical class 0.000 claims description 2
- 229910052804 chromium Inorganic materials 0.000 claims description 2
- 239000011651 chromium Substances 0.000 claims description 2
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 claims description 2
- 229910052750 molybdenum Inorganic materials 0.000 claims description 2
- 239000011733 molybdenum Substances 0.000 claims description 2
- 229910052758 niobium Inorganic materials 0.000 claims description 2
- 239000010955 niobium Substances 0.000 claims description 2
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims description 2
- 229910052763 palladium Inorganic materials 0.000 claims description 2
- 229910052708 sodium Inorganic materials 0.000 claims description 2
- 239000011734 sodium Substances 0.000 claims description 2
- 239000010936 titanium Substances 0.000 claims description 2
- 229910052719 titanium Inorganic materials 0.000 claims description 2
- 125000001183 hydrocarbyl group Chemical group 0.000 claims 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 claims 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 claims 1
- 239000002736 nonionic surfactant Substances 0.000 abstract description 6
- 150000002430 hydrocarbons Chemical group 0.000 abstract description 5
- 150000003868 ammonium compounds Chemical class 0.000 abstract description 3
- WOWHHFRSBJGXCM-UHFFFAOYSA-M cetyltrimethylammonium chloride Chemical compound [Cl-].CCCCCCCCCCCCCCCC[N+](C)(C)C WOWHHFRSBJGXCM-UHFFFAOYSA-M 0.000 abstract description 3
- 150000001412 amines Chemical class 0.000 abstract description 2
- APSBXTVYXVQYAB-UHFFFAOYSA-M sodium docusate Chemical compound [Na+].CCCCC(CC)COC(=O)CC(S([O-])(=O)=O)C(=O)OCC(CC)CCCC APSBXTVYXVQYAB-UHFFFAOYSA-M 0.000 abstract description 2
- 239000001836 Dioctyl sodium sulphosuccinate Substances 0.000 abstract 1
- 235000019329 dioctyl sodium sulphosuccinate Nutrition 0.000 abstract 1
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 20
- 238000004070 electrodeposition Methods 0.000 description 18
- 229910021580 Cobalt(II) chloride Inorganic materials 0.000 description 10
- GVPFVAHMJGGAJG-UHFFFAOYSA-L cobalt dichloride Chemical compound [Cl-].[Cl-].[Co+2] GVPFVAHMJGGAJG-UHFFFAOYSA-L 0.000 description 10
- 229910021586 Nickel(II) chloride Inorganic materials 0.000 description 9
- 150000002739 metals Chemical class 0.000 description 9
- QMMRZOWCJAIUJA-UHFFFAOYSA-L nickel dichloride Chemical compound Cl[Ni]Cl QMMRZOWCJAIUJA-UHFFFAOYSA-L 0.000 description 9
- 239000011888 foil Substances 0.000 description 6
- 239000000758 substrate Substances 0.000 description 6
- 239000007864 aqueous solution Substances 0.000 description 5
- 238000002484 cyclic voltammetry Methods 0.000 description 5
- 239000008367 deionised water Substances 0.000 description 5
- ZOMNIUBKTOKEHS-UHFFFAOYSA-L dimercury dichloride Chemical class Cl[Hg][Hg]Cl ZOMNIUBKTOKEHS-UHFFFAOYSA-L 0.000 description 5
- 239000003792 electrolyte Substances 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 229910000474 mercury oxide Inorganic materials 0.000 description 5
- UKWHYYKOEPRTIC-UHFFFAOYSA-N mercury(ii) oxide Chemical compound [Hg]=O UKWHYYKOEPRTIC-UHFFFAOYSA-N 0.000 description 5
- 239000011148 porous material Substances 0.000 description 5
- 239000000243 solution Substances 0.000 description 5
- 238000003860 storage Methods 0.000 description 5
- 239000007788 liquid Substances 0.000 description 4
- 239000007783 nanoporous material Substances 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 3
- 229910002804 graphite Inorganic materials 0.000 description 3
- 239000010439 graphite Substances 0.000 description 3
- 239000013335 mesoporous material Substances 0.000 description 3
- 229910021645 metal ion Inorganic materials 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- ZHNUHDYFZUAESO-UHFFFAOYSA-N Formamide Chemical compound NC=O ZHNUHDYFZUAESO-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 150000001868 cobalt Chemical class 0.000 description 2
- 239000002659 electrodeposit Substances 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000009533 lab test Methods 0.000 description 2
- 229910000480 nickel oxide Inorganic materials 0.000 description 2
- KBJMLQFLOWQJNF-UHFFFAOYSA-N nickel(ii) nitrate Chemical compound [Ni+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O KBJMLQFLOWQJNF-UHFFFAOYSA-N 0.000 description 2
- 230000000737 periodic effect Effects 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- ZWINLZAYDMUOAE-UHFFFAOYSA-N 2-[2-[2-[2-[2-[2-[2-[2-[2-(2-hexadecoxyethoxy)ethoxy]ethoxy]ethoxy]ethoxy]ethoxy]ethoxy]ethoxy]ethoxy]ethanol Chemical compound CCCCCCCCCCCCCCCCOCCOCCOCCOCCOCCOCCOCCOCCOCCOCCO ZWINLZAYDMUOAE-UHFFFAOYSA-N 0.000 description 1
- CPELXLSAUQHCOX-UHFFFAOYSA-M Bromide Chemical compound [Br-] CPELXLSAUQHCOX-UHFFFAOYSA-M 0.000 description 1
- 229910021585 Nickel(II) bromide Inorganic materials 0.000 description 1
- 150000001242 acetic acid derivatives Chemical class 0.000 description 1
- 239000000443 aerosol Substances 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 125000003277 amino group Chemical group 0.000 description 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-O ammonium group Chemical group [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 1
- 239000003945 anionic surfactant Substances 0.000 description 1
- 150000001649 bromium compounds Chemical class 0.000 description 1
- 125000002091 cationic group Chemical group 0.000 description 1
- 238000005234 chemical deposition Methods 0.000 description 1
- 150000001805 chlorine compounds Chemical class 0.000 description 1
- RKTYLMNFRDHKIL-UHFFFAOYSA-N copper;5,10,15,20-tetraphenylporphyrin-22,24-diide Chemical compound [Cu+2].C1=CC(C(=C2C=CC([N-]2)=C(C=2C=CC=CC=2)C=2C=CC(N=2)=C(C=2C=CC=CC=2)C2=CC=C3[N-]2)C=2C=CC=CC=2)=NC1=C3C1=CC=CC=C1 RKTYLMNFRDHKIL-UHFFFAOYSA-N 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000007429 general method Methods 0.000 description 1
- 150000004679 hydroxides Chemical class 0.000 description 1
- 238000009776 industrial production Methods 0.000 description 1
- 230000002535 lyotropic effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 150000002815 nickel Chemical class 0.000 description 1
- LGQLOGILCSXPEA-UHFFFAOYSA-L nickel sulfate Chemical compound [Ni+2].[O-]S([O-])(=O)=O LGQLOGILCSXPEA-UHFFFAOYSA-L 0.000 description 1
- IPLJNQFXJUCRNH-UHFFFAOYSA-L nickel(2+);dibromide Chemical compound [Ni+2].[Br-].[Br-] IPLJNQFXJUCRNH-UHFFFAOYSA-L 0.000 description 1
- AIYYMMQIMJOTBM-UHFFFAOYSA-L nickel(ii) acetate Chemical compound [Ni+2].CC([O-])=O.CC([O-])=O AIYYMMQIMJOTBM-UHFFFAOYSA-L 0.000 description 1
- 150000002823 nitrates Chemical class 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 239000011541 reaction mixture Substances 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 239000010948 rhodium Substances 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 238000001338 self-assembly Methods 0.000 description 1
- 239000011343 solid material Substances 0.000 description 1
- IIACRCGMVDHOTQ-UHFFFAOYSA-M sulfamate Chemical compound NS([O-])(=O)=O IIACRCGMVDHOTQ-UHFFFAOYSA-M 0.000 description 1
- IIACRCGMVDHOTQ-UHFFFAOYSA-N sulfamic acid Chemical class NS(O)(=O)=O IIACRCGMVDHOTQ-UHFFFAOYSA-N 0.000 description 1
- 150000003467 sulfuric acid derivatives Chemical class 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/56—Electroplating: Baths therefor from solutions of alloys
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/56—Electroplating: Baths therefor from solutions of alloys
- C25D3/562—Electroplating: Baths therefor from solutions of alloys containing more than 50% by weight of iron or nickel or cobalt
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/66—Electroplating: Baths therefor from melts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M10/00—Secondary cells; Manufacture thereof
- H01M10/24—Alkaline accumulators
- H01M10/30—Nickel accumulators
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M4/00—Electrodes
- H01M4/02—Electrodes composed of, or comprising, active material
- H01M4/13—Electrodes for accumulators with non-aqueous electrolyte, e.g. for lithium-accumulators; Processes of manufacture thereof
- H01M4/134—Electrodes based on metals, Si or alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M4/00—Electrodes
- H01M4/02—Electrodes composed of, or comprising, active material
- H01M4/13—Electrodes for accumulators with non-aqueous electrolyte, e.g. for lithium-accumulators; Processes of manufacture thereof
- H01M4/139—Processes of manufacture
- H01M4/1395—Processes of manufacture of electrodes based on metals, Si or alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M4/00—Electrodes
- H01M4/02—Electrodes composed of, or comprising, active material
- H01M4/36—Selection of substances as active materials, active masses, active liquids
- H01M4/38—Selection of substances as active materials, active masses, active liquids of elements or alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/0029—Processes of manufacture
- H01G9/0036—Formation of the solid electrolyte layer
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
- Y02E60/10—Energy storage using batteries
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Electroplating And Plating Baths Therefor (AREA)
- Electrolytic Production Of Metals (AREA)
- Electroplating Methods And Accessories (AREA)
- Secondary Cells (AREA)
- Battery Electrode And Active Subsutance (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
- Chemically Coating (AREA)
- Electrochromic Elements, Electrophoresis, Or Variable Reflection Or Absorption Elements (AREA)
Abstract
A mesoporous metal or metal compound is electrochemically deposited from a mixture comprising a first metal compound, a solvent and an ionic surfactant in amounts sufficient to form a liquid crystal phase. The first metal compound is present in the aqueous component of the liquid crystal phase containing mixture at a concentration of at least 0.4 M, which is a concentration where a comparative mixture containing the non-ionic surfactant Brij 56 instead of the ionic surfactant would cause the liquid crystal phase to be unstable or produce a deposit with a cathodic charge density less that half the value obtained using the ionic surfactant at the same deposition charge density. The surfactant may be an amine or ammonium compound, e.g. NR<1>R<2>R<3> or N<+>R<1>R<2>R<3>R<4>X<-> where at least one of R<1> to R<4> is a hydrocarbon group having at least 8 carbon atoms, salts containing long chain fatty acids, hydrocarbon residues with at least 8 carbon atoms, cetyltrimethylammonium chloride, cetyltrimethylammonium bromide, sodium dodecyl sulphate, hexadecyl amine, dodecyltrimethylammonium chloride or dioctyl sodium sulphosuccinate.
Description
1 2441531
LIQUID CRYSTAL TEMPLATED DEPOSITION METHOD
The present invention relates to a method of depositing metals having a good mesostructure from salts or other compounds thereof using a liquid crystal templating technique.
The mesostructured materials produced in the present invention, which are generally porous in nature and so may be described as "mesoporous", are sometimes referred to as "nanostructured". However, since the prefix "nano" strictly means I and the pores in such materials normally range in size from 0 to I 0 m, it is better to refer to them, as we do here, as "mesostructured".
The preparation and use of liquid crystalline phases is disclosed in US Patents No 6,503,382 and 6,203,925, the disclosures of which are incorporated herein by reference.
In general terms, liquid crystal templating comprises forming a liquid crystal comprising at least two "soft matter" phases arranged in a generally crystal-like regular array. This soft matter is often loosely referred to as "liquid", hence the term "liquid crystal". A solid material is deposited from one of these phases, either chemically or electrochemic ally, and naturally assumes the configuration of the phase from which it is deposited. The soft matter is then removed. This permits the preparation of materials having more-or-less regular structures which could not be achieved in any other way.
The liquid crystal phases are usually prepared with the aid of a surfactant and many such surfactants have been proposed for use in the process, including both ionic and non-ionic surfactants. However, in practice, apart from a few academic exercises, only non-ionic surfactants have actually been used and, in general, these have given good results in laboratory tests.
In a laboratory experiment, it is acceptable to allow deposition to take place over a considerable period of time. Indeed, it may even be desirable that deposition should take place slowly, so that the progress of the reaction can be more closely observed.
However, in industrial production, it is undesirable that production processes should be unduly prolonged and it is commonly desired that they should be completed as quickly as is consistent with obtaining the desired product in good yields and having the required properties. In an electrochemical liquid crystal templating deposition method in which a metal is deposited from a metal salt or similar compound, one way of achieving these desiderata is by increasing the concentration of the metal salt or other metal compound to as high a level as is achievable.
Unfortunately, we have found that, when high metal compound concentrations are used in conventional electrochemical processes, the liquid crystal becomes unstable and it becomes impossible to prepare metals having a good mesostructure.
Surprisingly, this does not appear to be a problem when the mesoporous material is formed by a chemical deposition method. This is exacerbated with the use of impure' non-ionic surfactants such as the Brij family which are commonly employed for their low cost. The concentration level at which the liquid crystal becomes unstable varies from metal to metal, but is easily determined by simple experiment. In the case of nickel, which is one of the metals for which liquid crystal templating deposition is of particular value, the concentration at which the liquid crystal phase becomes unstable is especially low, and this instability is a major problem when up-scaling laboratory processes for use in industry. However, the reason for the instability is not completely clear. Despite this, we have surprisingly found that the use of an ionic surfactant in place of the conventional non-ionic surfactant avoids the problem of instability.
Thus, in one aspect, the present invention consists in a process which comprises: forming a mixture comprising a metal compound from which the metal or a compound of the metal may be deposited, a solvent and a surfactant in amounts sufficient to form a liquid crystal phase in the mixture; and electrochemically depositing the metal or a compound of the metal from the metal compound, characterised in that the surfactant is an ionic surfactant and the metal compound is present in the aqueous component of the liquid crystal phase-containing mixture at a concentration which, in a comparative mixture identical to the liquid crystal phase-containing mixture except that the ionic j 3 surfactant is replaced by a mixture of compounds of general formula CH3-(CH2)15-(CH2CH2O)-OH, where y is a number and the abundance of the compound having that value of y is approximately that shown in the following Table, y % Abundance in Surfactant ____________ Component 3 1.7 4 2.8 4.0 6 5.6 7 7.3 8 9.4 9 10.8 11.1 11 11.1 12 10.8 13 8.5 14 6.4 4.9 16 3.4 17 2.2 would cause the liquid crystal phase to be unstable or produce a deposit with a cathodic charge density less than half the value of that obtained using the ionic surfactant, with the same deposition charge density.
A commercially available mixture of compounds of formula CH3-(CH2)15-(CH2CH2O)-OH having the relative abundances of compounds of different values of y shown in the above Table is Brij 56, which is widely available, e.g. from Univar Ltd, United Kingdom.
The cathodic charge density referred to herein may be measured by the method described in detail in Example 5 hereafter.
In a further aspect, the present invention consists in a process which comprises: forming a mixture comprising a metal compound from which the metal or a compound of the metal may be deposited, a solvent and a surfactant in amounts sufficient to form a liquid crystal phase in the mixture; and electrochemically depositing the metal or a compound of the metal from the metal compound, characterised in that the surfactant is an ionic surfactant and the metal compound is present in the aqueous component of the liquid crystal phase-containing mixture at a concentration of at least 0.4 M. Formation of mixtures containing liquid crystal phases is now a well established technology and the details of the preparation of such mixtures is well known to those skilled in the art and so requires no explanation here.
The solvent is included in the mixture in order to dissolve the metal compound and to form a liquid crystalline phase in conjunction with the surfactant, thereby to provide a medium for the deposition reaction. Generally, water will be used as the preferred solvent. However, in certain cases it may be desirable or necessary to carry out the reaction in a non-aqueous environment. In these circumstances a suitable organic solvent may be used, for example formamide or ethylene glycoL Any ionic surfactant capable of forming a liquid crystal phase in the mixture of the present invention may be used. Preferred surfactants are those having an ionic group attached, directly or indirectly, to one or more hydrocarbon chains having at least 8 carbon atoms, preferably from 8 to 30 carbon atoms. By "ionic group" we mean a group, such as an ammonium group, which already contains ions, or a group, such as an amine group, which can readily form ions. Examples of such compounds include amines and ammonium compounds e.g. of formula NR1R2R3 orNR'R2R3R4 X, where at least one of R1, R2 and R3 or R', R2, R3 and R4 represents a hydrocarbon group having at least 8, preferably at least 10, more preferably from 8 to 30 and most preferably from 10 to 20, carbon atoms, and X represents an anion. Other examples include salts containing long chain fatty acid or hydrocarbon residues, said residues each having at least 8, preferably at least 10, more preferably from 8 to 30 and most preferably from 10 to 20, carbon atoms. Specific examples of preferred surfactants include cetyltrimethylammonium chloride (CTAC), cetyltrimethylammonium bromide (CTAB), sodium dodecyl sulphate (SDS), hexadecyl amine (HDA), dodecyltrimethylammonium chloride (DTAC) and dioctyl sodium suiphosaccinate (also known as Aerosol 01' -AOT). AOT and SDS are anionic surfactants while the others specified by the formulae NR1R2R3 or NR'R2R3R4 Xare cationic. Of these, the preferred surfactants are the ammonium compounds, especially cetyltrimethylammonium bromide.
The present invention may be used in connection with any metal or compound of a metal which it is desired to form into a mesostructure by deposition from a liquid crystal phase. Examples of such metals include: nickel, platinum, cobalt, iron, tin, lead, selenium, manganese, chromium, copper, zinc, niobium, molybdenum, titanium, palladium, gold, silver, cadmium, and mercury, or mixtures or alloys of any two or more thereof. The invention is of especial value in connection with nickel, cobalt, zinc, iron, tin, copper, lead, selenium, or cadmium, or a mixture or alloy of any two or more thereof, more preferably nickel or cobalt or a mixture or alloy thereof, especially nickel and mixtures of nickel with other metals, e.g. nickel/cobalt, since, in these cases, the instability of the liquid crystal system is manifest at relatively low concentration levels.
The metal compounds employed to form the liquid crystal system are preferably metal salts. The salts used will, of course, depend on the metal or compound of the metal to be deposited and should be soluble in the solvent employed. Examples of such salts include the chlorides, acetates, sulphates, bromides, nitrates, sulphamates, and tetrafluoroborates, especially those of the above metals, and preferably nickel (II) chloride, nickel (II) acetate, nickel (II) sulphate, nickel (II) bromide, nickel (II) nitrate, nickel (H) sulphamate, and nickel (II) tetrafluoroborate.
Depending on the reaction conditions, the metal itself may be deposited or a compound of the metal may be deposited. Examples of such compounds of metals include the oxides and hydroxides.
These salts, or other metal compounds, are present in the aqueous component of the reaction mixture in relatively high concentrations, higher than would allow the formation of a stable liquid crystal phase were a non-ionic surfactant, such as decaethylene glycol monohexadecyl ether, used. In general, the concentration of the salt the aqueous component should be at least 0.4 M, more preferably at least 0.6 M. The maximum concentration is, of course, saturation and this varies from one salt to another, but the value for any salt is well known or can easily be determined. Still more preferably, the concentration is from 0. 4 M to 4 M, more preferably from 0.6 M to 3 M and most preferably from 0.8 M to 2 M. Where a mixture of two or more salts of different metals are employed, the minimum concentration of 0.4 M applies only to the salt having the highest concentration. The other salt or salts may be present in lower concentrations. For example, where a mixture of nickel and cobalt salts is employed, it will normally be the nickel salt that is at the higher concentration. Should a mixture of two or more salts of the same metal be employed, the total concentration of the two or more salts should be at least 0.4M.
The mixture of solvent, surfactant and metal salt, optionally with other components such as are well known in the art, will form a liquid crystal phase. The desired metal is then deposited from the mixture using conventional electrochemical means. Since mesostructured materials often lack structural strength, they are preferably deposited onto a substrate, e.g. a metal, such as gold, copper, silver, platinum, tin, aluminium, nickel, rhodium or cobalt, or an alloy containing any of these metals. The substrate may, if desired, be microporous, with pores of a size preferably in the range from 20 to 500 micrometres. Where the substrate is a metal foil, the substrate preferably has a thickness in the range from 2 to 50 micrometres. The substrate preferably is a nickel foil.
Suitable methods for depositing mesoporous materials as films onto a substrate by electrochemical deposition are known in the art. For example, suitable electrochemical deposition methods are disclosed in EP-A-993,512; Nelson, et al., Mesoporous Nickel/Nickel Oxide Electrodes for High Power Applications ", J. New Mat. Electrochem. Systems, 5, 63-65 (2002); Nelson, et al., "Mesoporous Nickel/Nickel Oxide -a Nanoarchitectured Electrode ", Chem. Mater., 2002, 24, 524-529.
Preferably, the mesoporous material is formed by electrochemical deposition from a lyotropic liquid crystalline phase. According to a general method, a template is formed by self-assembly from the long-chain surfactants described above and water into a desired liquid crystal phase. The mesoporous structure has a periodic arrangement of pores having a defined, recognisable topology or architecture, for example cubic, lamellar, oblique, centred rectangular, body-centred orthorhombic, body-centred tetragonal, rhombohedral, hexagonal. Preferably, the mesoporous structure has a periodic pore arrangement that is hexagonal, in which the mesoporous metal or compound of the metal is perforated by a hexagonally oriented array of pores that are of uniform diameter and continuous through the thickness of the metal or compound of the metal.
The invention is further illustrated by the following non-limiting Examples.
EXAMPLE 1
A liquid crystal template was made by mixing 30 g of cetyltrimethylammonium bromide (CTAB) with 30 g of an aqueous solution consisting of 0.56 M nickel (II) chloride (NiCJ2) and 0.24 M cobalt (II) chloride (CoC12). An electrochemical cell using the mixed liquid crystal as electrolyte and nickel foil positive and negative electrodes was then assembled. A saturated calomel reference electrode (SCE) was also inserted to control the subsequent electrodeposition of nanoporous material.
Electrodeposition of the niesoporous nickel/cobalt containing layer was carried out by applying a constant potential of -0.75 V versus the SCE reference to one of the nickel foils. Electrodeposition was carried out for 50 minutes, after which time a charge density of -2.0 C/cm2 had passed. The electrodeposited film was then washed in deionised water for 24 hours to remove the liquid crystal template.
Once washed, the charge storage capacity of the electrodeposited film was measured using cyclic voltammetry in 6 M potassium hydroxide (KOH) solution versus a mercury/mercury oxide reference electrode (HgfHgO, with 6 M KOH). At a scan rate of 20 mV/s, the film was cycled continuously between 0 V and 0.55 V. On the third cycle, the film had a cathodic charge density of416 mC/cm2.
EXAMPLE 2
A liquid crystal template was made by mixing 30 g of cetyltrimethylammonium bromide (CTAB) with 30 g of an aqueous solution consisting of 0.84 M nickel (II) chloride (N1CI2) and 0.36 M cobalt (II) chloride (CoCl2). An electrochemical cell using the mixed liquid crystal as electrolyte and nickel foil positive and negative electrodes was then assembled. A saturated calomel reference electrode (SCE) was also inserted to control the subsequent electrodeposition of nanoporous material.
Electrodeposition of the mesoporous nickel/cobalt containing layer was carried out by applying a constant potential of -0.75 V versus the SCE reference to one of the nickel foils. Electrodeposition was carried out for 25 minutes, after which time a charge density of -2.0 C/cm2 had passed. The electrodeposited film was then washed in deionised water for 24 hours to remove the liquid crystal template.
Once washed, the charge storage capacity of the electrodeposited film was measured using cyclic voltammetry in 6 M potassium hydroxide (KOH) solution versus a mercury/mercury oxide reference electrode (Hg/HgO, with 6 M KOH). At a scan rate of 20 mV/s, the film was cycled continuously between 0 V and 0.55 V. On the third cycle, the film had a cathodic charge density of 324 mC/cm2.
EXAMPLE 3
A liquid crystal template was made by mixing 30 g of cetyltrimethylammonium bromide (CTAB) with 30 g of an aqueous solution consisting of 0.84 M nickel (II) chloride (NiCl2) and 0.36 M cobalt (II) chloride (CoC12). An electrochemical cell using the mixed liquid crystal as electrolyte, nickel foil as negative electrode and a graphite sheet as positive electrode was then assembled. A saturated calomel reference electrode (SCE) was also inserted to control the subsequent electrodeposition of nanoporous material. Electrodeposition of the mesoporous nickel/cobalt containing layer was carried out by applying a constant potential of -0.75 V versus the SCE reference to one of the nickel foils. Electrodeposition was carried out for 40 minutes, after which time a charge density of -2.6 C/cm2 had passed. The electrodeposited film was then washed in deionised water for 24 hours to remove the liquid crystal template.
Once washed, the charge storage capacity of the electrodeposited film was measured using cyclic voltammetry in 6 M potassium hydroxide (KOH) solution versus a mercury/mercury oxide reference electrode (HgfHgO, with 6 M KOH). At a scan rate of 20 mV/s, the film was cycled continuously between 0 V and 0.55 V. On the third cycle, the film had a cathodic charge density of 442 mC/cm2.
EXAMPLE 4
A liquid crystal template was made by mixing 30 g of cetyltrimethylammonium bromide (CTAB) with 30 g of an aqueous solution consisting of 0.84 M nickel (II) chloride (NjCI2) and 0.36 M cobalt (II) chloride (CoCI2). An electrochemical cell using the mixed liquid crystal as electrolyte, nickel foil as negative electrode and a graphite sheet as positive electrode was then assembled. A saturated calomel reference electrode (SCE) was also inserted to control the subsequent electrodeposition of nanoporous material. Electrodeposition of the mesoporous nickel/cobalt containing layer was carried out by applying a constant potential of -0.75 V versus the SCE reference to one of the nickel foils. Electrodeposition was carried out for 75 minutes, after which time a charge density of-3.2 C/cm2 had passed. The electrodeposited film was then washed in deionised water for 24 hours to remove the liquid crystal template.
Once washed, the charge storage capacity of the electrodeposited film was measured using cyclic voltammetry in 6 M potassium hydroxide (KOH) solution versus a mercury/mercury oxide reference electrode (HgIHgO, with 6 M KOH). At a scan rate of 20 mV/s, the film was cycled continuously between 0 V and 0.55 V. On the third cycle, the film had a cathodic charge density of 614 mC/cm2.
EXAMPLE 5 (Comparative) Procedures similar to those described in the preceding Examples were repeated, but using nickel or cobalt salts or mixtures of these salts at various concentrations and replacing the cetyltrimethylammoniuin bromide by an equivalent amount of Brij 56. It was found possible to electrodeposit nickel and nickel/cobalt containing films from hexagonal phase liquid crystal templates based on this Brij surfactant over a period of about twenty hours, which is, in practice, too long to be commercially attractive, when the metal ion (nickel and/or cobalt) concentration was about 0.2 M. However, using compositions of higher metal ion concentration of 0.5 M the electrodeposition process was faster but the deposits were cracked and patchy. At metal ion concentrations of 0.8 M the liquid crystal phase could be seen by eye to destabilise after only three minutes with a resulting poor quality electrodeposit. Here, a liquid crystal template was made by mixing 30 g of Brij 56 with 30 g of an aqueous solution consisting of 0.8 M nickel (II) chloride (NiC12) and 0.36 M cobalt (II) chloride (CoCI2). An electrochemical cell using the mixed liquid crystal as electrolyte, nickel foil as negative electrode and a graphite sheet as positive electrode was then assembled. A saturated calomel reference electrode (SCE) was also inserted to control the subsequent electrodeposition of material. Electrodeposttion of the nickel/cobalt containing layer was carried out by applying a constant potential of -0.75 V versus the SCE reference to one of the nickel foils. Electrodeposition was carried out for 75 minutes, after which time a charge density of-3.2 C/cm2 had passed. The electrodeposited filn was then washed in deionised water for 24 hours to remove the liquid crystal template.
Once washed, the charge storage capacity of the electrodeposited film was measured using cyclic voltammetry in 6 M potassium hydroxide (KOH) solution versus a mercury/mercury oxide reference electrode (Hg/HgO, with 6 M KOH). At a scan rate of 20 mV/s, the film was cycled continuously between 0 V and 0.55 V. On the third cycle, the film had a cathodic charge density of 21 mC/cm2.
Claims (13)
- CLAIMS: 1 A process which comprises: forming a mixture comprising ametal compound from which the metal or a compound of the metal may be deposited, a solvent and a surfactant in amounts sufficient to form a liquid crystal phase in the mixture; and electrochemically depositing the metal or a compound of the metal from the metal compound, characterised in that the surfactant is an ionic surfactant and the metal compound is present in the aqueous component of the liquid crystal phase-containing mixture at a concentration which, in a comparative mixture identical to the liquid crystal phase-containing mixture except that the ionic surfactant is replaced by a mixture of compounds of general formula CR3-(CH2)15-(CH2CH2O)-OH, where y is a number and the abundance of the compound having that value of y is approximately that shown inthe following Table,y % Abundance in Surfactant ___________ Component 3 1.7 4 2.8 4.0 6 5.6 7 7.3 8 9.4 9 10.8 11.1 11 11.1 12 10.8 13 8.5 14 6.4 4.9 16 3. 4 17 2.2 would cause the liquid crystal phase to be unstable or produce a deposit with a cathodic charge density less than half the value of that obtained using the ionic surfactant, with the same deposition charge density.
- 2. A process which comprises: forming a mixture comprising a metal compound from which the metal or a compound of the metal may be deposited, a solvent and a surfactant in amounts sufficient to form a liquid crystal phase in the mixture; and electrochemically depositing the metal or a compound of the metal from the metal compound, characterised in that the surfactant is an ionic surfactant and the metal compound is present in the aqueous component of the liquid crystal phase-containing mixture at a concentration of at least 0.4 M.
- 3. A process according to Claim 1 or Claim 2, in which the metal is nickel, platinum, cobalt, iron, tin, lead, selenium, manganese, chromium, copper, zinc, niobium, molybdenum, titanium, palladium, gold, silver, cadmium, and mercury, or a mixture or alloy of any two or more thereof
- 4. A process according to Claim 3, in which the metal is nickel, cobalt, zinc, iron, tin, copper, lead, selenium, or cadmium, or a mixture or alloy of any two or more thereof.
- 5. A process according to Claim 3, in which the metal is nickel or cobalt or a mixture or alloy thereof.
- 6. A process according to any one of the preceding Claims, in which the compound of the metal is an oxide or hydroxide or a mixture thereof.
- 7. A process according to any one of the preceding Claims, in which the concentration of said metal compound is at least 0.6 M.
- 8. A process according to Claim 7, in which the concentration of said metal compound is from 0.4 M to 4 M, more preferably from 0.6 M to 3 M, more preferably from 0.8 M to 2 M and most preferably from 1.2 M to 2 M..
- 9. A process according to any one of the preceding Claims, in which the surfactant has an ionic group attached, directly or indirectly, to one or more hydrocarbon chains having at least 8 carbon atoms.
- 10. A process according to Claim 9, in which the surfactant is a compound of formula NR1R2R3 or NR'R2R3R4 X, where at least one of R1, R2 and R3 or R1, R2, R3 and R4 represents a hydrocarbon group having at least 8, preferably at least 10, carbon atoms, and X represents an anion.
- 11. A process according to Claim 8, in which the surfactant is a salt containing long chain fatty acid or hydrocarbon residues, said residues each having at least 8, preferably at least 10, carbon atoms.
- 12. A process according to any one of Claims 1 to 8, in which the surfactant is cetyltrimethylammonjum chloride, cetyltrimethylammonium bromide, sodium dodecyl sulphate, hexadecyl amine, dodecyltrimethylammonium chloride or dioctyl sodium suiphosuccinate.
- 13. A process according to Claim 12, in which the surfactant is cetyltrimethylammonium bromide.
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GB0617741A GB2441531A (en) | 2006-09-08 | 2006-09-08 | Liquid crystal templated deposition method |
TW096131857A TW200827497A (en) | 2006-09-08 | 2007-08-28 | Liquid crystal templated deposition method |
CA002662714A CA2662714A1 (en) | 2006-09-08 | 2007-09-07 | Liquid crystal templated deposition method |
US12/440,092 US20100044240A1 (en) | 2006-09-08 | 2007-09-07 | Liquid crystal templated deposition method |
CN2007800399753A CN101563483B (en) | 2006-09-08 | 2007-09-07 | Liquid crystal template deposition method |
AU2007293317A AU2007293317B2 (en) | 2006-09-08 | 2007-09-07 | Liquid crystal templated deposition method |
KR1020097007170A KR20090063247A (en) | 2006-09-08 | 2007-09-07 | Liquid crystal templated deposition method |
PCT/GB2007/003389 WO2008029160A2 (en) | 2006-09-08 | 2007-09-07 | Liquid crystal templated deposition method |
EP07804188A EP2059629A2 (en) | 2006-09-08 | 2007-09-07 | Liquid crystal templated deposition method |
JP2009527205A JP2010502839A (en) | 2006-09-08 | 2007-09-07 | Liquid crystal templated deposition method |
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WO2011012890A1 (en) | 2009-07-28 | 2011-02-03 | Cambridge Enterprise Limited | Liquid crystal device comprising a polymer template with periodic voids and manufacturing method therefor |
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CN101362949B (en) * | 2008-09-16 | 2011-12-28 | 北京科技大学 | Method for preparing liquid crystal mixture with smectic phase-cholesteric phase transformation |
EP2356069B1 (en) | 2008-10-20 | 2022-12-07 | QinetiQ Limited | Synthesis of metal compounds |
JP5366076B2 (en) * | 2008-11-21 | 2013-12-11 | 奥野製薬工業株式会社 | Electroplating bath for porous plating film containing additive for forming porous plating film |
JP2010150622A (en) * | 2008-12-26 | 2010-07-08 | Hitachi Ltd | Plating liquid, conductive body substrate having projecting metallic structure and method of manufacturing the same |
JP5674937B2 (en) * | 2010-08-06 | 2015-02-25 | デルタ エレクトロニクス インコーポレーテッド | Method for producing a porous material |
WO2018058457A1 (en) * | 2016-09-29 | 2018-04-05 | 东北石油大学 | Method and device for preparing high-durability super-hydrophobic film on inner wall of slender metal pipe |
CN107245732B (en) * | 2017-06-28 | 2019-03-12 | 无锡市恒利弘实业有限公司 | A method of high-strength corrosion-resisting cadmium tin titanium alloy being electroplated in 304 or 316L stainless steel surface |
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GB0500035D0 (en) * | 2005-01-04 | 2005-02-09 | Nanotecture Ltd | Filter |
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- 2007-09-07 US US12/440,092 patent/US20100044240A1/en not_active Abandoned
- 2007-09-07 KR KR1020097007170A patent/KR20090063247A/en not_active Application Discontinuation
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- 2007-09-07 CA CA002662714A patent/CA2662714A1/en not_active Abandoned
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WO2011012890A1 (en) | 2009-07-28 | 2011-02-03 | Cambridge Enterprise Limited | Liquid crystal device comprising a polymer template with periodic voids and manufacturing method therefor |
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WO2008029160A2 (en) | 2008-03-13 |
US20100044240A1 (en) | 2010-02-25 |
WO2008029160A3 (en) | 2008-10-09 |
KR20090063247A (en) | 2009-06-17 |
JP2010502839A (en) | 2010-01-28 |
EP2059629A2 (en) | 2009-05-20 |
AU2007293317B2 (en) | 2012-06-28 |
CN101563483A (en) | 2009-10-21 |
CA2662714A1 (en) | 2008-03-13 |
CN101563483B (en) | 2011-07-27 |
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GB0617741D0 (en) | 2006-10-18 |
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