WO2008029160A2 - Liquid crystal templated deposition method - Google Patents
Liquid crystal templated deposition method Download PDFInfo
- Publication number
- WO2008029160A2 WO2008029160A2 PCT/GB2007/003389 GB2007003389W WO2008029160A2 WO 2008029160 A2 WO2008029160 A2 WO 2008029160A2 GB 2007003389 W GB2007003389 W GB 2007003389W WO 2008029160 A2 WO2008029160 A2 WO 2008029160A2
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- WO
- WIPO (PCT)
- Prior art keywords
- metal
- mixture
- compound
- surfactant
- liquid crystal
- Prior art date
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- 239000004973 liquid crystal related substance Substances 0.000 title claims abstract description 50
- 238000000151 deposition Methods 0.000 title claims abstract description 17
- 229910052751 metal Inorganic materials 0.000 claims abstract description 53
- 239000002184 metal Substances 0.000 claims abstract description 53
- 150000001875 compounds Chemical class 0.000 claims abstract description 26
- 150000003839 salts Chemical class 0.000 claims abstract description 22
- 150000002736 metal compounds Chemical class 0.000 claims abstract description 20
- 239000002563 ionic surfactant Substances 0.000 claims abstract description 12
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 62
- 239000000203 mixture Substances 0.000 claims description 38
- 229910052759 nickel Inorganic materials 0.000 claims description 28
- 238000000034 method Methods 0.000 claims description 25
- 239000004094 surface-active agent Substances 0.000 claims description 22
- 239000010941 cobalt Substances 0.000 claims description 15
- 229910017052 cobalt Inorganic materials 0.000 claims description 15
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 15
- LZZYPRNAOMGNLH-UHFFFAOYSA-M Cetrimonium bromide Chemical compound [Br-].CCCCCCCCCCCCCCCC[N+](C)(C)C LZZYPRNAOMGNLH-UHFFFAOYSA-M 0.000 claims description 14
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 8
- 239000002904 solvent Substances 0.000 claims description 8
- 239000000956 alloy Substances 0.000 claims description 7
- 229910045601 alloy Inorganic materials 0.000 claims description 7
- 125000004432 carbon atom Chemical group C* 0.000 claims description 7
- 230000008021 deposition Effects 0.000 claims description 7
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 claims description 7
- 229910052753 mercury Inorganic materials 0.000 claims description 7
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 5
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 5
- 229910052802 copper Inorganic materials 0.000 claims description 5
- 239000010949 copper Substances 0.000 claims description 5
- 239000011135 tin Substances 0.000 claims description 5
- 229910052718 tin Inorganic materials 0.000 claims description 5
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 4
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 claims description 4
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 4
- 229910052793 cadmium Inorganic materials 0.000 claims description 4
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 claims description 4
- 229910052742 iron Inorganic materials 0.000 claims description 4
- 239000011133 lead Substances 0.000 claims description 4
- 229910052711 selenium Inorganic materials 0.000 claims description 4
- 239000011669 selenium Substances 0.000 claims description 4
- APSBXTVYXVQYAB-UHFFFAOYSA-M sodium docusate Chemical compound [Na+].CCCCC(CC)COC(=O)CC(S([O-])(=O)=O)C(=O)OCC(CC)CCCC APSBXTVYXVQYAB-UHFFFAOYSA-M 0.000 claims description 4
- 229910052725 zinc Inorganic materials 0.000 claims description 4
- 239000011701 zinc Substances 0.000 claims description 4
- FJLUATLTXUNBOT-UHFFFAOYSA-N 1-Hexadecylamine Chemical compound CCCCCCCCCCCCCCCCN FJLUATLTXUNBOT-UHFFFAOYSA-N 0.000 claims description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 3
- DBMJMQXJHONAFJ-UHFFFAOYSA-M Sodium laurylsulphate Chemical compound [Na+].CCCCCCCCCCCCOS([O-])(=O)=O DBMJMQXJHONAFJ-UHFFFAOYSA-M 0.000 claims description 3
- WOWHHFRSBJGXCM-UHFFFAOYSA-M cetyltrimethylammonium chloride Chemical group [Cl-].CCCCCCCCCCCCCCCC[N+](C)(C)C WOWHHFRSBJGXCM-UHFFFAOYSA-M 0.000 claims description 3
- 230000000052 comparative effect Effects 0.000 claims description 3
- DDXLVDQZPFLQMZ-UHFFFAOYSA-M dodecyl(trimethyl)azanium;chloride Chemical compound [Cl-].CCCCCCCCCCCC[N+](C)(C)C DDXLVDQZPFLQMZ-UHFFFAOYSA-M 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 239000010931 gold Substances 0.000 claims description 3
- 125000003010 ionic group Chemical group 0.000 claims description 3
- 229910052697 platinum Inorganic materials 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 2
- 239000001836 Dioctyl sodium sulphosuccinate Substances 0.000 claims description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 2
- 150000001450 anions Chemical class 0.000 claims description 2
- 229910052804 chromium Inorganic materials 0.000 claims description 2
- 239000011651 chromium Substances 0.000 claims description 2
- 235000019329 dioctyl sodium sulphosuccinate Nutrition 0.000 claims description 2
- 150000004668 long chain fatty acids Chemical class 0.000 claims description 2
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 claims description 2
- 229910052750 molybdenum Inorganic materials 0.000 claims description 2
- 239000011733 molybdenum Substances 0.000 claims description 2
- 229910052758 niobium Inorganic materials 0.000 claims description 2
- 239000010955 niobium Substances 0.000 claims description 2
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims description 2
- 229910052763 palladium Inorganic materials 0.000 claims description 2
- 235000019333 sodium laurylsulphate Nutrition 0.000 claims description 2
- 239000010936 titanium Substances 0.000 claims description 2
- 229910052719 titanium Inorganic materials 0.000 claims description 2
- 125000001183 hydrocarbyl group Chemical group 0.000 claims 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 claims 1
- 239000002736 nonionic surfactant Substances 0.000 abstract description 6
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 20
- 238000004070 electrodeposition Methods 0.000 description 19
- 229910021580 Cobalt(II) chloride Inorganic materials 0.000 description 9
- 229910021586 Nickel(II) chloride Inorganic materials 0.000 description 9
- GVPFVAHMJGGAJG-UHFFFAOYSA-L cobalt dichloride Chemical compound [Cl-].[Cl-].[Co+2] GVPFVAHMJGGAJG-UHFFFAOYSA-L 0.000 description 9
- 150000002739 metals Chemical class 0.000 description 9
- QMMRZOWCJAIUJA-UHFFFAOYSA-L nickel dichloride Chemical compound Cl[Ni]Cl QMMRZOWCJAIUJA-UHFFFAOYSA-L 0.000 description 9
- 239000011888 foil Substances 0.000 description 6
- 239000000758 substrate Substances 0.000 description 6
- 239000007864 aqueous solution Substances 0.000 description 5
- 238000002484 cyclic voltammetry Methods 0.000 description 5
- 239000008367 deionised water Substances 0.000 description 5
- ZOMNIUBKTOKEHS-UHFFFAOYSA-L dimercury dichloride Chemical class Cl[Hg][Hg]Cl ZOMNIUBKTOKEHS-UHFFFAOYSA-L 0.000 description 5
- 239000003792 electrolyte Substances 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 229910000474 mercury oxide Inorganic materials 0.000 description 5
- UKWHYYKOEPRTIC-UHFFFAOYSA-N mercury(ii) oxide Chemical compound [Hg]=O UKWHYYKOEPRTIC-UHFFFAOYSA-N 0.000 description 5
- 239000011148 porous material Substances 0.000 description 5
- 239000000243 solution Substances 0.000 description 5
- 238000003860 storage Methods 0.000 description 5
- 239000007788 liquid Substances 0.000 description 4
- 239000007783 nanoporous material Substances 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 3
- 229910002804 graphite Inorganic materials 0.000 description 3
- 239000010439 graphite Substances 0.000 description 3
- 150000002430 hydrocarbons Chemical group 0.000 description 3
- 239000013335 mesoporous material Substances 0.000 description 3
- 229910021645 metal ion Inorganic materials 0.000 description 3
- -1 nickel/cobalt Chemical class 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- ZHNUHDYFZUAESO-UHFFFAOYSA-N Formamide Chemical compound NC=O ZHNUHDYFZUAESO-UHFFFAOYSA-N 0.000 description 2
- 150000003868 ammonium compounds Chemical class 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 150000001868 cobalt Chemical class 0.000 description 2
- 239000002659 electrodeposit Substances 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000009533 lab test Methods 0.000 description 2
- 229910000480 nickel oxide Inorganic materials 0.000 description 2
- KBJMLQFLOWQJNF-UHFFFAOYSA-N nickel(ii) nitrate Chemical compound [Ni+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O KBJMLQFLOWQJNF-UHFFFAOYSA-N 0.000 description 2
- 230000000737 periodic effect Effects 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- ZWINLZAYDMUOAE-UHFFFAOYSA-N 2-[2-[2-[2-[2-[2-[2-[2-[2-(2-hexadecoxyethoxy)ethoxy]ethoxy]ethoxy]ethoxy]ethoxy]ethoxy]ethoxy]ethoxy]ethanol Chemical compound CCCCCCCCCCCCCCCCOCCOCCOCCOCCOCCOCCOCCOCCOCCOCCO ZWINLZAYDMUOAE-UHFFFAOYSA-N 0.000 description 1
- 229910021585 Nickel(II) bromide Inorganic materials 0.000 description 1
- 150000001242 acetic acid derivatives Chemical class 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 125000003277 amino group Chemical group 0.000 description 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-O ammonium group Chemical group [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 1
- 239000003945 anionic surfactant Substances 0.000 description 1
- 150000003842 bromide salts Chemical class 0.000 description 1
- 125000002091 cationic group Chemical group 0.000 description 1
- 238000005234 chemical deposition Methods 0.000 description 1
- 150000001805 chlorine compounds Chemical class 0.000 description 1
- RKTYLMNFRDHKIL-UHFFFAOYSA-N copper;5,10,15,20-tetraphenylporphyrin-22,24-diide Chemical compound [Cu+2].C1=CC(C(=C2C=CC([N-]2)=C(C=2C=CC=CC=2)C=2C=CC(N=2)=C(C=2C=CC=CC=2)C2=CC=C3[N-]2)C=2C=CC=CC=2)=NC1=C3C1=CC=CC=C1 RKTYLMNFRDHKIL-UHFFFAOYSA-N 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000007429 general method Methods 0.000 description 1
- 150000004679 hydroxides Chemical class 0.000 description 1
- 238000009776 industrial production Methods 0.000 description 1
- 230000002535 lyotropic effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 150000002815 nickel Chemical class 0.000 description 1
- LGQLOGILCSXPEA-UHFFFAOYSA-L nickel sulfate Chemical compound [Ni+2].[O-]S([O-])(=O)=O LGQLOGILCSXPEA-UHFFFAOYSA-L 0.000 description 1
- IPLJNQFXJUCRNH-UHFFFAOYSA-L nickel(2+);dibromide Chemical compound [Ni+2].[Br-].[Br-] IPLJNQFXJUCRNH-UHFFFAOYSA-L 0.000 description 1
- KERTUBUCQCSNJU-UHFFFAOYSA-L nickel(2+);disulfamate Chemical compound [Ni+2].NS([O-])(=O)=O.NS([O-])(=O)=O KERTUBUCQCSNJU-UHFFFAOYSA-L 0.000 description 1
- AIYYMMQIMJOTBM-UHFFFAOYSA-L nickel(ii) acetate Chemical compound [Ni+2].CC([O-])=O.CC([O-])=O AIYYMMQIMJOTBM-UHFFFAOYSA-L 0.000 description 1
- 150000002823 nitrates Chemical class 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 239000011541 reaction mixture Substances 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 239000010948 rhodium Substances 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 238000001338 self-assembly Methods 0.000 description 1
- 239000011343 solid material Substances 0.000 description 1
- IIACRCGMVDHOTQ-UHFFFAOYSA-N sulfamic acid Chemical class NS(O)(=O)=O IIACRCGMVDHOTQ-UHFFFAOYSA-N 0.000 description 1
- 150000003467 sulfuric acid derivatives Chemical class 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/56—Electroplating: Baths therefor from solutions of alloys
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/56—Electroplating: Baths therefor from solutions of alloys
- C25D3/562—Electroplating: Baths therefor from solutions of alloys containing more than 50% by weight of iron or nickel or cobalt
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/66—Electroplating: Baths therefor from melts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M10/00—Secondary cells; Manufacture thereof
- H01M10/24—Alkaline accumulators
- H01M10/30—Nickel accumulators
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M4/00—Electrodes
- H01M4/02—Electrodes composed of, or comprising, active material
- H01M4/13—Electrodes for accumulators with non-aqueous electrolyte, e.g. for lithium-accumulators; Processes of manufacture thereof
- H01M4/134—Electrodes based on metals, Si or alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M4/00—Electrodes
- H01M4/02—Electrodes composed of, or comprising, active material
- H01M4/13—Electrodes for accumulators with non-aqueous electrolyte, e.g. for lithium-accumulators; Processes of manufacture thereof
- H01M4/139—Processes of manufacture
- H01M4/1395—Processes of manufacture of electrodes based on metals, Si or alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M4/00—Electrodes
- H01M4/02—Electrodes composed of, or comprising, active material
- H01M4/36—Selection of substances as active materials, active masses, active liquids
- H01M4/38—Selection of substances as active materials, active masses, active liquids of elements or alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/0029—Processes of manufacture
- H01G9/0036—Formation of the solid electrolyte layer
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
- Y02E60/10—Energy storage using batteries
Definitions
- the present invention relates to a method of depositing metals having a good mesostructure from salts or other compounds thereof using a liquid crystal templating technique.
- mesostructured materials produced in the present invention which are generally porous in nature and so may be described as “mesoporous”, are sometimes referred to as “nanostructured".
- nanostructured since the prefix “nano” strictly means 10 , and the pores in such materials normally range in size from 10 " “ to 10 " “ m, it is better to refer to them, as we do here, as “mesostructured”.
- liquid crystal templating comprises forming a liquid crystal comprising at least two "soft matter” phases arranged in a generally crystal-like regular array.
- This soft matter is often loosely referred to as “liquid”, hence the term “liquid crystal”.
- a solid material is deposited from one of these phases, either chemically or electrochemically, and naturally assumes the configuration of the phase from which it is deposited. The soft matter is then removed. This permits the preparation of materials having more-or-less regular structures which could not be achieved in any other way.
- the liquid crystal phases are usually prepared with the aid of a surfactant and many such surfactants have been proposed for use in the process, including both ionic and non-ionic surfactants.
- a surfactant in which a metal is deposited from a metal salt or similar compound, one way of achieving these desiderata is by increasing the concentration of the metal salt or other metal compound to as high a level as is achievable.
- the present invention consists in a process which comprises: forming a mixture comprising a metal compound from which the metal or a compound of the metal may be deposited, a solvent and a surfactant in amounts sufficient to form a liquid crystal phase in the mixture; and electrochemically depositing the metal or a compound of the metal from the metal compound, characterised in that the surfactant is an ionic surfactant and the metal compound is present in the aqueous component of the liquid crystal phase-containing mixture at a concentration which, in a comparative mixture identical to the liquid crystal phase-containing mixture except that the ionic surfactant is replaced by a mixture of compounds of general formula CH 3 -(CH 2 ) ⁇ - (CH 2 CH 2 CO y -OH, where y is a number and the abundance of the compound having that value of y is approximately that shown in the following Table,
- liquid crystal phase would cause the liquid crystal phase to be unstable or produce a deposit with a cathodic charge density less than half the value of that obtained using the ionic surfactant, with the same deposition charge density.
- a commercially available mixture of compounds of formula CH 3 -(CH 2 )i 5 -(CH 2 CH 2 O) y -OH having the relative abundances of compounds of different values of y shown in the above Table is Brij 56, which is widely available, e.g. from Univar Ltd, United Kingdom.
- the present invention consists in a process which comprises: forming a mixture comprising a metal compound from which the metal or a compound of the metal may be deposited, a solvent and a surfactant in amounts sufficient to form a liquid crystal phase in the mixture; and electrochemically depositing the metal or a compound of the metal from the metal compound, characterised in that the surfactant is an ionic surfactant and the metal compound is present in the aqueous component of the liquid crystal phase-containing mixture at a concentration of at least 0.4 M.
- the solvent is included in the mixture in order to dissolve the metal compound and to form a liquid crystalline phase in conjunction with the surfactant, thereby to provide a medium for the deposition reaction.
- water will be used as the preferred solvent.
- a suitable organic solvent may be used, for example formamide or ethylene glycol.
- ionic surfactant capable of forming a liquid crystal phase in the mixture of the present invention
- Preferred surfactants are those having an ionic group attached, directly or indirectly, to one or more hydrocarbon chains having at least 8 carbon atoms, preferably from 8 to 30 carbon atoms.
- ionic group we mean a group, such as an ammonium group, which already contains ions, or a group, such as an amine group, which can readily form ions. Examples of such compounds include amines and ammonium compounds e.g.
- R , R 2 and R 3 or R 1 , R 2 , R 3 and R 4 represents a hydrocarbon group having at least 8, preferably at least 10, more preferably from 8 to 30 and most preferably from 10 to 20, carbon atoms
- X ' represents an anion.
- Other examples include salts containing long chain fatty acid or hydrocarbon residues, said residues each having at least 8, preferably at least 10, more preferably from 8 to 30 and most preferably from 10 to 20, carbon atoms.
- preferred surfactants include cetyltrimethylammonium chloride (CTAC), cetyltrimethylammonium bromide (CTAB), sodium dodecyl sulphate (SDS), hexadecyl amine (HDA), dodecyltrimethylammonium chloride (DTAC) and dioctyl sodium sulphosuccinate (also known as Aerosol OT - AOT).
- AOT and SDS are anionic surfactants while the others specified by the formulae NR 1 R 2 R 3 or N + R 1 R 2 R 3 R 4 X " are cationic.
- the preferred surfactants are the ammonium compounds, especially cetyltrimethylammonium bromide.
- the present invention may be used in connection with any metal or compound of a metal which it is desired to form into a mesostructure by deposition from a liquid crystal phase.
- metals include: nickel, platinum, cobalt, iron, tin, lead, selenium, manganese, chromium, copper, zinc, niobium, molybdenum, titanium, palladium, gold, silver, cadmium, and mercury, or mixtures or alloys of any two or more thereof.
- the invention is of especial value in connection with nickel, cobalt, zinc, iron, tin, copper, lead, selenium, or cadmium, or a mixture or alloy of any two or more thereof, more preferably nickel or cobalt or a mixture or alloy thereof, especially nickel and mixtures of nickel with other metals, e.g. nickel/cobalt, since, in these cases, the instability of the liquid crystal system is manifest at relatively low concentration levels.
- the metal compounds employed to form the liquid crystal system are preferably metal salts. The salts used will, of course, depend on the metal or compound of the metal to be deposited and should be soluble in the solvent employed.
- salts include the chlorides, acetates, sulphates, bromides, nitrates, sulphamates, and tetrafluoroborates, especially those of the above metals, and preferably nickel (II) chloride, nickel (II) acetate, nickel (II) sulphate, nickel (II) bromide, nickel (II) nitrate, nickel (II) sulphamate, and nickel (II) tetrafluoroborate.
- the metal itself may be deposited or a compound of the metal may be deposited.
- examples of such compounds of metals include the oxides and hydroxides.
- the concentration of the salt the aqueous component should be at least 0.4 M, more preferably at least 0.6 M.
- the maximum concentration is, of course, saturation and this varies from one salt to another, but the value for any salt is well known or can easily be determined.
- the concentration is from 0.4 M to 4 M, more preferably from 0.6 M to 3 M and most preferably from 0.8 M to 2 M.
- the minimum concentration of 0.4 M applies only to the salt having the highest concentration.
- the other salt or salts may be present in lower concentrations.
- nickel and cobalt salts it will normally be the nickel salt that is at the higher concentration.
- the total concentration of the two or more salts should be at least 0.4M.
- the mixture of solvent, surfactant and metal salt, optionally with other components such as are well known in the art, will form a liquid crystal phase.
- the desired metal is then deposited from the mixture using conventional electrochemical means. Since mesostructured materials often lack structural strength, they are preferably deposited onto a substrate, e.g. a metal, such as gold, copper, silver, platinum, tin, aluminium, nickel, rhodium or cobalt, or an alloy containing any of these metals.
- the substrate may, if desired, be microporous, with pores of a size preferably in the range from 20 to 500 micrometres. Where the substrate is a metal foil, the substrate preferably has a thickness in the range from 2 to 50 micrometres.
- the substrate preferably is a nickel foil.
- a liquid crystal template was made by mixing 3O g of cetyltrimethylammonium bromide (CTAB) with 30 g of an aqueous solution consisting of 0.56 M nickel (II) chloride (NiCl 2 ) and 0.24 M cobalt (II) chloride (CoCl 2 ).
- An electrochemical cell using the mixed liquid crystal as electrolyte and nickel foil positive and negative electrodes was then assembled.
- a saturated calomel reference electrode (SCE) was also inserted to control the subsequent electrodeposition of nanoporous material.
- Electrodeposition of the mesoporous nickel/cobalt containing layer was carried out by applying a constant potential of -0.75 V versus the SCE reference to one of the nickel foils. Electrodeposition was carried out for 50 minutes, after which time a charge density of -2.0 ClcnP- had passed. The electrodeposited film was then washed in deionised water for 24 hours to remove the liquid crystal template.
- the charge storage capacity of the electrodeposited film was measured using cyclic voltammetry in 6 M potassium hydroxide (KOH) solution versus a mercury/mercury oxide reference electrode (Hg/HgO, with 6 M KOH).
- KOH potassium hydroxide
- Hg/HgO mercury/mercury oxide reference electrode
- the film was cycled continuously between 0 V and 0.55 V.
- the film had a cathodic charge density of 324 mC/cm .
- a liquid crystal template was made by mixing 30 g of cetyltrimethylammonium bromide (CTAB) with 30 g of an aqueous solution consisting of 0.84 M nickel (II) chloride (NiC ⁇ ) and 0.36 M cobalt (II) chloride (C0CI2).
- CTAB cetyltrimethylammonium bromide
- NiC ⁇ nickel
- II nickel
- C0CI2 0.36 M cobalt
- An electrochemical cell using the mixed liquid crystal as electrolyte, nickel foil as negative electrode and a graphite sheet as positive electrode was then assembled.
- a saturated calomel reference electrode (SCE) was also inserted to control the subsequent electrodeposition of nanoporous material. Electrodeposition of the mesoporous nickel/cobalt containing layer was carried out by applying a constant potential of -0.75 V versus the SCE reference to one of the nickel foils. Electrodeposition was carried out for 40 minutes, after which time a charge density of -2.6 C/cm ⁇
- the charge storage capacity of the electrodeposited film was measured using cyclic voltammetry in 6 M potassium hydroxide (KOH) solution versus a mercury/mercury oxide reference electrode (Hg/HgO, with 6 M KOH).
- KOH potassium hydroxide
- Hg/HgO mercury/mercury oxide reference electrode
- the film was cycled continuously between 0 V and 0.55 V.
- the film had a cathodic charge density of 614 mC/cm .
- a liquid crystal template was made by mixing 30 g of Brij ® 56 with 30 g of an aqueous solution consisting of 0.8 M nickel (II) chloride (NiCl 2 ) and 0.36 M cobalt (II) chloride (CoCl 2 ).
- An electrochemical cell using the mixed liquid crystal as electrolyte, nickel foil as negative electrode and a graphite sheet as positive electrode was then assembled.
- a saturated calomel reference electrode (SCE) was also inserted to control the subsequent electrodeposition of material.
- Electrodeposition of the nickel/cobalt containing layer was carried out by applying a constant potential of -0.75 V versus the SCE reference to one of the nickel foils. Electrodeposition was carried out for 75 minutes, after which time a charge density of -3.2 C/crn ⁇ had passed. The electrodeposited film was then washed in deionised water for 24 hours to remove the liquid crystal template.
- the charge storage capacity of the electrodeposited film was measured using cyclic voltammetry in 6 M potassium hydroxide (KOH) solution versus a mercury/mercury oxide reference electrode (Hg/HgO, with 6 M KOH).
- KOH potassium hydroxide
- Hg/HgO mercury/mercury oxide reference electrode
- the film was cycled continuously between 0 V and 0.55 V.
- the film had a cathodic charge density of 21 mC/cm .
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Electroplating And Plating Baths Therefor (AREA)
- Electrolytic Production Of Metals (AREA)
- Electroplating Methods And Accessories (AREA)
- Chemically Coating (AREA)
- Secondary Cells (AREA)
- Battery Electrode And Active Subsutance (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
- Electrochromic Elements, Electrophoresis, Or Variable Reflection Or Absorption Elements (AREA)
Abstract
Description
Claims
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
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CA002662714A CA2662714A1 (en) | 2006-09-08 | 2007-09-07 | Liquid crystal templated deposition method |
AU2007293317A AU2007293317B2 (en) | 2006-09-08 | 2007-09-07 | Liquid crystal templated deposition method |
US12/440,092 US20100044240A1 (en) | 2006-09-08 | 2007-09-07 | Liquid crystal templated deposition method |
EP07804188A EP2059629A2 (en) | 2006-09-08 | 2007-09-07 | Liquid crystal templated deposition method |
CN2007800399753A CN101563483B (en) | 2006-09-08 | 2007-09-07 | Liquid crystal template deposition method |
JP2009527205A JP2010502839A (en) | 2006-09-08 | 2007-09-07 | Liquid crystal templated deposition method |
Applications Claiming Priority (2)
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GB0617741.4 | 2006-09-08 | ||
GB0617741A GB2441531A (en) | 2006-09-08 | 2006-09-08 | Liquid crystal templated deposition method |
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WO2008029160A2 true WO2008029160A2 (en) | 2008-03-13 |
WO2008029160A3 WO2008029160A3 (en) | 2008-10-09 |
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PCT/GB2007/003389 WO2008029160A2 (en) | 2006-09-08 | 2007-09-07 | Liquid crystal templated deposition method |
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US (1) | US20100044240A1 (en) |
EP (1) | EP2059629A2 (en) |
JP (1) | JP2010502839A (en) |
KR (1) | KR20090063247A (en) |
CN (1) | CN101563483B (en) |
AU (1) | AU2007293317B2 (en) |
CA (1) | CA2662714A1 (en) |
GB (1) | GB2441531A (en) |
TW (1) | TW200827497A (en) |
WO (1) | WO2008029160A2 (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010121194A (en) * | 2008-11-21 | 2010-06-03 | Okuno Chem Ind Co Ltd | Additive for forming porous plating film and method of forming porous plating film |
JP2010150622A (en) * | 2008-12-26 | 2010-07-08 | Hitachi Ltd | Plating liquid, conductive body substrate having projecting metallic structure and method of manufacturing the same |
CN101362949B (en) * | 2008-09-16 | 2011-12-28 | 北京科技大学 | Method for preparing liquid crystal mixture with smectic phase-cholesteric phase transformation |
US8932545B2 (en) | 2008-10-20 | 2015-01-13 | Qinetiq Limited | Synthesis of metal compounds |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB0913110D0 (en) | 2009-07-28 | 2009-09-02 | Cambridge Entpr Ltd | Electro-optic device |
CN103189131A (en) * | 2010-08-06 | 2013-07-03 | 台达电子工业股份有限公司 | Process for manufacturing porous material |
WO2018058457A1 (en) * | 2016-09-29 | 2018-04-05 | 东北石油大学 | Method and device for preparing high-durability super-hydrophobic film on inner wall of slender metal pipe |
CN107245732B (en) * | 2017-06-28 | 2019-03-12 | 无锡市恒利弘实业有限公司 | A method of high-strength corrosion-resisting cadmium tin titanium alloy being electroplated in 304 or 316L stainless steel surface |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5677390A (en) * | 1979-11-28 | 1981-06-25 | Gifu Daigaku | Electrodepositing method using liquid crystal substance as electrolytic liquid |
US6503382B1 (en) * | 1997-06-27 | 2003-01-07 | University Of Southampton | Method of electrodepositing a porous film |
WO2006072784A2 (en) * | 2005-01-04 | 2006-07-13 | Nanotecture Ltd | Nanoporous filter |
JP2006233272A (en) * | 2005-02-24 | 2006-09-07 | Univ Waseda | Method for producing film of mesoporous metal |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
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GB9703920D0 (en) * | 1997-02-25 | 1997-04-16 | Univ Southampton | Method of preparing a porous metal |
GB9819160D0 (en) * | 1998-09-02 | 1998-10-28 | City Tech | Pellistor |
JP4117704B2 (en) * | 2003-02-28 | 2008-07-16 | 学校法人早稲田大学 | Method for producing mesoporous metal |
WO2006068444A1 (en) * | 2004-12-23 | 2006-06-29 | Seoul National University Industry Foundation | Fabrication of mesoporous metal electrodes in non-liquid-crystalline phase and its application |
-
2006
- 2006-09-08 GB GB0617741A patent/GB2441531A/en not_active Withdrawn
-
2007
- 2007-08-28 TW TW096131857A patent/TW200827497A/en unknown
- 2007-09-07 KR KR1020097007170A patent/KR20090063247A/en not_active Application Discontinuation
- 2007-09-07 WO PCT/GB2007/003389 patent/WO2008029160A2/en active Application Filing
- 2007-09-07 US US12/440,092 patent/US20100044240A1/en not_active Abandoned
- 2007-09-07 CN CN2007800399753A patent/CN101563483B/en not_active Expired - Fee Related
- 2007-09-07 JP JP2009527205A patent/JP2010502839A/en not_active Withdrawn
- 2007-09-07 EP EP07804188A patent/EP2059629A2/en not_active Withdrawn
- 2007-09-07 AU AU2007293317A patent/AU2007293317B2/en not_active Expired - Fee Related
- 2007-09-07 CA CA002662714A patent/CA2662714A1/en not_active Abandoned
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5677390A (en) * | 1979-11-28 | 1981-06-25 | Gifu Daigaku | Electrodepositing method using liquid crystal substance as electrolytic liquid |
US6503382B1 (en) * | 1997-06-27 | 2003-01-07 | University Of Southampton | Method of electrodepositing a porous film |
WO2006072784A2 (en) * | 2005-01-04 | 2006-07-13 | Nanotecture Ltd | Nanoporous filter |
JP2006233272A (en) * | 2005-02-24 | 2006-09-07 | Univ Waseda | Method for producing film of mesoporous metal |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101362949B (en) * | 2008-09-16 | 2011-12-28 | 北京科技大学 | Method for preparing liquid crystal mixture with smectic phase-cholesteric phase transformation |
US8932545B2 (en) | 2008-10-20 | 2015-01-13 | Qinetiq Limited | Synthesis of metal compounds |
JP2010121194A (en) * | 2008-11-21 | 2010-06-03 | Okuno Chem Ind Co Ltd | Additive for forming porous plating film and method of forming porous plating film |
JP2010150622A (en) * | 2008-12-26 | 2010-07-08 | Hitachi Ltd | Plating liquid, conductive body substrate having projecting metallic structure and method of manufacturing the same |
Also Published As
Publication number | Publication date |
---|---|
AU2007293317A1 (en) | 2008-03-13 |
TW200827497A (en) | 2008-07-01 |
US20100044240A1 (en) | 2010-02-25 |
GB2441531A (en) | 2008-03-12 |
CA2662714A1 (en) | 2008-03-13 |
CN101563483B (en) | 2011-07-27 |
AU2007293317B2 (en) | 2012-06-28 |
GB0617741D0 (en) | 2006-10-18 |
CN101563483A (en) | 2009-10-21 |
JP2010502839A (en) | 2010-01-28 |
WO2008029160A3 (en) | 2008-10-09 |
KR20090063247A (en) | 2009-06-17 |
EP2059629A2 (en) | 2009-05-20 |
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