JP5361718B2 - 短絡保護機能を有する電気光学活性有機ダイオード - Google Patents
短絡保護機能を有する電気光学活性有機ダイオード Download PDFInfo
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- JP5361718B2 JP5361718B2 JP2009520104A JP2009520104A JP5361718B2 JP 5361718 B2 JP5361718 B2 JP 5361718B2 JP 2009520104 A JP2009520104 A JP 2009520104A JP 2009520104 A JP2009520104 A JP 2009520104A JP 5361718 B2 JP5361718 B2 JP 5361718B2
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- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
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- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- RJWLRCHYHHXJLX-UHFFFAOYSA-N barium(2+);selenium(2-) Chemical class [Se-2].[Ba+2] RJWLRCHYHHXJLX-UHFFFAOYSA-N 0.000 description 1
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- MRELNEQAGSRDBK-UHFFFAOYSA-N lanthanum(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[La+3].[La+3] MRELNEQAGSRDBK-UHFFFAOYSA-N 0.000 description 1
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- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 1
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- YWDGEUIDOIIHTK-UHFFFAOYSA-N selanylidenebarium Chemical compound [Ba]=[Se] YWDGEUIDOIIHTK-UHFFFAOYSA-N 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/82—Cathodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/301—Details of OLEDs
- H10K2102/341—Short-circuit prevention
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/17—Carrier injection layers
- H10K50/171—Electron injection layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/18—Carrier blocking layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/844—Encapsulations
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- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Electroluminescent Light Sources (AREA)
- Non-Portable Lighting Devices Or Systems Thereof (AREA)
Description
102 アノード層
110 電気光学活性有機層
113 正孔輸送層(HTL)
115 電子輸送及び放出層(ETL/EML)
120 無機短絡保護層
122 カソード層
124 被覆層
210 電気光学活性有機層
211 HIL
215 ETL/EML
300 基板
302 アノード層
310 電気光学活性有機層
320 短絡保護層
322 カソード層
324 被覆層
326 第2被覆層
Claims (16)
- アノード電極層と、
カソード電極層と、
前記電極間に配置された電気光学活性有機層と、
前記カソード層が前記電気光学活性有機層と被覆層との間に配置されるように、前記カソード電極層の表面と接触して配置された前記被覆層と、を備え、前記被覆層が、前記被覆層と接触しているカソード層材料に対して、不活性な材料で形成されており、前記表面全体が被覆されるように、前記不活性材料が前記カソード層の前記表面に配置された電気光学活性有機ダイオードであって、
前記カソード電極層と前記電気光学活性有機層との間で、前記カソード電極層に隣接して配置された短絡保護層を更に備え、前記短絡保護層は無機半導体材料で形成されており、前記短絡保護層は導電性を有すると共に、少なくとも200Åの厚みを有する、電気光学活性有機ダイオード。 - 前記無機半導体材料はカソード層の材料よりも高い融点を有する、請求項1に記載の有機ダイオード。
- 前記無機半導体材料は2.7eVより大きいバンドギャップを有する、請求項1又は2に記載の有機ダイオード。
- 前記無機半導体材料は0.5eVから3.5eVの間の電子親和力を有する、請求項1乃至3のいずれか1項に記載の有機ダイオード。
- 前記無機半導体材料は1より大きい誘電率を有する、請求項1乃至4のいずれか1項に記載の有機ダイオード。
- 前記無機半導体材料は、アルカリ土類金属又はランタノイドのカルコゲニド又は二元酸化物を含む、請求項1乃至5のいずれか1項に記載の有機ダイオード。
- 前記無機半導体材料は、BaO、BaSe、La 2 O 3 、又はCe 2 O 3 を含む、請求項1乃至6のいずれか1項に記載の有機ダイオード。
- 前記被覆層は導電性を有する、請求項1乃至7のいずれか1項に記載の有機ダイオード。
- 前記被覆層は1より大きい誘電率を有する材料からなる、請求項1乃至7のいずれか1項に記載の有機ダイオード。
- 前記被覆層は接着剤からなる、請求項1乃至7及び請求項9のいずれか1項に記載の有機ダイオード。
- 前記被覆層はエポキシ又はアクリルタイプの接着剤からなる、請求項1乃至7,9及び10のいずれか1項に記載の有機ダイオード。
- 前記被覆層は窒化ケイ素(SiN)、炭化ケイ素(SiC)、二酸化ケイ素(SiO2)、又は酸化アルミニウム(Al2O3)を含む薄膜パッケージ材料を含む、請求項1乃至7及び請求項9乃至11のいずれか1項に記載の有機ダイオード。
- 前記被覆層上に配置された第2被覆層を更に備えた、請求項1乃至12のいずれか1項に記載の有機ダイオード。
- 請求項1乃至13のいずれか1項に記載の有機ダイオードを備えた照明デバイス。
- 請求項1乃至11のいずれか1項に記載の有機ダイオードを備えた、ディスプレイデバイス。
- 請求項1乃至11のいずれか1項に記載の有機ダイオードを備えた、有機太陽電池デバイス。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP06117444.7 | 2006-07-19 | ||
EP06117444 | 2006-07-19 | ||
PCT/IB2007/052790 WO2008010165A2 (en) | 2006-07-19 | 2007-07-12 | Electro-optically active organic diode with short protection |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2009544163A JP2009544163A (ja) | 2009-12-10 |
JP5361718B2 true JP5361718B2 (ja) | 2013-12-04 |
Family
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Application Number | Title | Priority Date | Filing Date |
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JP2009520104A Expired - Fee Related JP5361718B2 (ja) | 2006-07-19 | 2007-07-12 | 短絡保護機能を有する電気光学活性有機ダイオード |
Country Status (6)
Country | Link |
---|---|
US (1) | US7985966B2 (ja) |
EP (1) | EP2047539B1 (ja) |
JP (1) | JP5361718B2 (ja) |
CN (1) | CN101490866B (ja) |
TW (1) | TW200812425A (ja) |
WO (1) | WO2008010165A2 (ja) |
Families Citing this family (6)
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US9178093B2 (en) * | 2011-07-06 | 2015-11-03 | Flextronics Ap, Llc | Solar cell module on molded lead-frame and method of manufacture |
CN104124383A (zh) * | 2013-04-28 | 2014-10-29 | 海洋王照明科技股份有限公司 | 柔性有机电致发光器件及其制备方法 |
JP6049556B2 (ja) | 2013-07-01 | 2016-12-21 | 株式会社東芝 | 太陽電池、太陽電池モジュール及び太陽電池の製造方法 |
US20150349159A1 (en) * | 2014-05-28 | 2015-12-03 | National Tsing Hua University | Bendable solar cell capable of optimizing thickness and conversion efficiency |
CN106784350A (zh) * | 2016-12-23 | 2017-05-31 | 京东方科技集团股份有限公司 | 一种有机电致发光显示面板及其制作方法、显示装置 |
CN112331794B (zh) * | 2019-11-04 | 2023-02-17 | 广东聚华印刷显示技术有限公司 | 复合阴极结构及其制备方法、发光器件和显示装置 |
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JP3266573B2 (ja) * | 1998-04-08 | 2002-03-18 | 出光興産株式会社 | 有機エレクトロルミネッセンス素子 |
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JP4423701B2 (ja) * | 1999-06-07 | 2010-03-03 | Tdk株式会社 | 有機el表示装置 |
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2007
- 2007-07-12 EP EP07805134.9A patent/EP2047539B1/en active Active
- 2007-07-12 JP JP2009520104A patent/JP5361718B2/ja not_active Expired - Fee Related
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TW200812425A (en) | 2008-03-01 |
CN101490866A (zh) | 2009-07-22 |
JP2009544163A (ja) | 2009-12-10 |
US20090309095A1 (en) | 2009-12-17 |
EP2047539A2 (en) | 2009-04-15 |
WO2008010165A3 (en) | 2008-03-20 |
WO2008010165A2 (en) | 2008-01-24 |
US7985966B2 (en) | 2011-07-26 |
EP2047539B1 (en) | 2018-03-14 |
CN101490866B (zh) | 2011-04-06 |
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