JP5361663B2 - Device storage package and mounting structure - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a package for containing an element which is superior in heat dissipation, and to provide a mounting structure using the package for containing the element. <P>SOLUTION: The package for containing the element includes a substrate having a mounting area of the element on an upper surface, a frame which is provided along an outer circumference of the mounting area on the substrate, and partly has a through trench exposing the upper surface of the substrate, and an I/O terminal having a dielectric layer which is provided in the through trench, comes into contact with the exposed upper surface of the substrate, and extends inside and outside the frame, a signal line formed on an upper surface of the dielectric layer, and a ground layer formed on a lower surface of the dielectric layer. <P>COPYRIGHT: (C)2011,JPO&amp;INPIT

Description

  The present invention relates to an element storage package and a mounting structure using the element storage package.

  2. Description of the Related Art Conventionally, an element storage package having an input / output terminal in which a signal line is formed on one main surface of a dielectric layer and a ground layer is formed on the other main surface of the dielectric layer is known (see Patent Document 1 below). ).

JP 2002-76495 A

  By the way, when high frequency waves such as microwaves and millimeter waves are transmitted to the signal line, the signal line may become high temperature due to the high frequency. Then, when the inside of the element storage package becomes high temperature, there is a possibility that the electrical characteristics of the elements mounted inside will change greatly.

  The present invention has been made in view of the above, and an object of the present invention is to provide an element housing package excellent in heat dissipation and a mounting structure using the element housing package.

In order to solve the above-described problems, an element storage package according to a first aspect of the present invention is provided on a substrate having an element mounting region on an upper surface thereof and on the substrate along the outer periphery of the mounting region. A frame having a through groove partially exposing the upper surface of the substrate; and a dielectric layer provided in the through groove and in contact with the exposed upper surface of the substrate and extending in and out of the frame. And an input / output terminal having a signal line formed on the upper surface of the dielectric layer and a ground layer formed on the lower surface of the dielectric layer, the frame facing each other with the input / output terminal interposed therebetween A pair of body
The end portion is curved toward the inside or the outside of the frame .

  A mounting structure according to a second aspect of the present invention includes the element storage package and an element mounted on the element storage package.

  According to the present invention, it is an object to provide an element storage package having excellent heat dissipation and a mounting structure using the element storage package.

It is an outline perspective view of the mounting structure concerning this embodiment. It is a general | schematic perspective view which shows the state which mounted the element in the package for element storage which concerns on this embodiment. It is a top view of the package for element storage which concerns on this embodiment. It is a general | schematic perspective view of the frame of the element storage package which concerns on this embodiment. It is a general-view perspective view of the input / output terminal of the element storage package according to the present embodiment, and is a partial perspective view of the signal line. It is a top view which shows the junction location of an input / output terminal and a frame. It is a top view which shows the junction location of the input-output terminal which concerns on one modification, and a frame. It is a top view which shows the junction location of the input-output terminal which concerns on one modification, and a frame.

  Exemplary embodiments of an element storage package according to the present invention and a mounting structure using the element storage package will be described below in detail with reference to the accompanying drawings. In addition, this invention shall not be limited to the following embodiment.

<Schematic configuration of mounting structure>
FIG. 1 is a schematic perspective view showing a mounting structure 1 according to the present embodiment. FIG. 2 is a schematic perspective view of the element storage package 2 according to the present embodiment. The mounting structure 1 is used for home appliances such as a television, and electronic devices such as a mobile phone or a computer device. In particular, it is used for a high-frequency circuit of an electronic device used at a high frequency such as a microwave and a millimeter wave.

  The element storage package 2 includes, for example, an active element such as a semiconductor element, an optical semiconductor element, a transistor, a diode, or a thyristor, or a passive element such as a resistor, a capacitor, a solar cell, a piezoelectric element, a crystal oscillator, or a ceramic oscillator. Used to mount the element 3. A mounting structure 1 is formed by mounting the element 3 on the element storage package 2.

  The element storage package 2 includes a substrate 4 having a mounting region R of the element 3 on the upper surface, a frame 5 provided on the substrate 4 along the outer periphery of the mounting region R, and having a through groove D in part. The input / output terminal 6 is provided in the through groove D and electrically connects the inside and outside of the frame body 5.

  The substrate 4 is a member formed in a square shape when viewed in plan. The substrate 4 is made of, for example, a metal material such as copper, iron, tungsten, molybdenum, nickel, or cobalt, an alloy containing these metal materials, or a composite material thereof. The substrate 4 has a function of improving heat conductivity and dissipating heat generated from the element 3 mounted in the mounting region R to the outside efficiently through the substrate 4. The thermal conductivity of the substrate 4 is set to 15 W / (m · K) or more and 450 W / (m · K) or less, for example. The Young's modulus of the substrate 4 is set to, for example, 100 GPa or more and 500 GPa or less.

  In addition, the substrate 4 is formed in a predetermined shape such as a plate shape by using a conventionally known metal processing method such as rolling or punching for an ingot obtained by casting and solidifying a molten metal material into a mold. To be produced. The length of one side of the substrate 4 is set to 3 mm or more and 50 mm or less, for example. Moreover, the thickness of the board | substrate 4 is set to 0.3 mm or more and 5 mm or less, for example.

  Further, a plating layer such as nickel or gold is formed on the surface of the substrate 4 by using an electroplating method or an electroless plating method in order to prevent oxidative corrosion or to easily braze the element 3 to the mounting region R. Has been. The mounting region R of the substrate 4 is a region that is not connected to the frame body 5 when the frame body 5 is connected to the upper surface of the substrate 4. In the present embodiment, the substrate 4 has a quadrangular shape. However, the shape of the substrate 4 is not limited to the quadrangular shape and may be a polygonal shape or an elliptical shape as long as the element can be mounted.

  FIG. 4 is a schematic perspective view of the frame 5 provided on the substrate 2. As shown in FIG. 4, the frame body 5 is a member that is connected along the outer periphery of the mounting region R of the substrate 4 and protects elements mounted on the mounting region R from the outside. In addition, the frame body 5 has a through groove D provided with an input / output terminal 6 in a part of the side surface. The frame 5 is brazed to the substrate 4 via an adhesive g1 such as a brazing material. The brazing material is made of, for example, silver, copper, gold, aluminum, or magnesium, and may contain an additive such as nickel, cadmium, or phosphorus.

  Here, the material of the adhesive g1 is selected so that the Young's modulus of the adhesive g1 is smaller than the Young's modulus of the substrate 2 or the Young's modulus of the frame body 5. When the input / output terminal 6 transmits a high frequency such as a microwave or a millimeter wave to the signal line, the signal line may become high temperature due to the high frequency. Then, due to the heat of the input / output terminal 6, the substrate 2 or the frame body 5 tends to undergo thermal expansion. Therefore, by making the Young's modulus of the adhesive g1 smaller than the Young's modulus of the substrate 2 or the frame 5, the adhesive g1 deforms the stress due to the thermal deformation of the substrate 2 or the frame 5, so that the substrate 2 or The stress received from the frame 5 can be relaxed. As a result, the stress applied to the input / output terminal 6 from the substrate 2 or the frame 5 can be reduced, and the occurrence of cracks in the input / output terminal 6 can be suppressed. The Young's modulus of the adhesive g1 is set to, for example, 50 GPa or more and 95 GPa or less.

  The frame 5 is made of, for example, a metal material such as copper, iron, tungsten, molybdenum, nickel, or cobalt, an alloy containing these metal materials, or a composite material thereof. The frame 5 has a function of efficiently dissipating heat generated from the element 3 to the outside of the frame 5 in a state where the element 3 is mounted in the mounting region R. The thermal conductivity of the frame 5 is set to, for example, 15 W / (m · K) or more and 450 W / (m · K) or less. Moreover, the Young's modulus of the frame 5 is set to 100 GPa or more and 500 GPa or less, for example.

  The length of one side of the frame 5 when viewed in plan is set to, for example, 3 mm or more and 50 mm or less. Moreover, the thickness width from the inner side to the outer side of the frame 5 when viewed in plan is set to, for example, 0.3 mm or more and 3 mm or less. Furthermore, the thickness of the frame 5 in the vertical direction is set to, for example, 1 mm or more and 20 mm or less.

  The through grooves D are respectively provided on the opposing surfaces of the frame body 5. The through groove D is formed from the lower end to the upper end of the frame body 5 so as to divide a part of the frame body 5. And in the state which provided the frame 5 on the board | substrate 2, the location where the through-groove D of the frame 5 is provided exposes a part of upper surface of the board | substrate 2. FIG.

  The size of the through groove D in the vertical direction is set to, for example, 1 mm or more and 20 mm or less. The size of the through groove D in the width direction is set to, for example, 1 mm or more and 20 mm or less. The thickness of the through groove D from the inside to the outside of the frame body 5 is set to, for example, 0.3 mm or more and 3 mm or less.

  FIG. 5 is a schematic perspective view of the input / output terminal 6.

  The input / output terminal 6 provided in the through groove D is provided on the dielectric layer 7 extending in and out of the frame body 5, the signal line 8 formed on the upper surface of the dielectric layer 7, and the lower surface of the dielectric layer 7. A ground layer 9 to be formed and an insulator layer 10 formed on the dielectric layer 7 so as to cross the signal line 8 are included. Here, the signal line 8 and the ground layer 9 are paired and function as a high-frequency transmission line.

  The signal line 8 has a function of transmitting a predetermined electrical signal. The signal line 8 is used as, for example, a microstrip line or a coplanar line. The signal line 8 is made of a metal material such as copper, silver, gold, aluminum, nickel, or chromium, for example. The line width of the signal line 8 is ¼ or less of the wavelength of the signal transmitted to the signal line 8, and is set to, for example, 0.05 mm or more and 0.5 mm or less.

  The signal line 8 is formed with a lead terminal for connecting to the outside through, for example, a brazing material. The lead terminal is a member for electrically connecting an external electronic device or the like to the element 3.

  The ground layer 9 is formed on the lower surface of the dielectric layer 7. The ground layer 9 has a function of setting a common potential, for example, a ground potential. The ground layer 9 is made of a metal material such as copper, silver, gold, aluminum, nickel, or chromium, for example. The ground layer 9 is formed in a region overlapping the signal line 8 in plan view. The substrate 4 is made of a metal material, and the ground layer 9 and the substrate 4 are electrically connected.

  The dielectric layer 7 and the insulator layer 10 are insulating substrates, for example, inorganic materials such as aluminum oxide, aluminum nitride, or silicon nitride, or organic materials such as epoxy resin, polyimide resin, or ethylene resin, or alumina. Or it consists of ceramic materials, such as mullite, or a glass ceramic material. Or it consists of a composite material which mixed several materials among these materials. The thicknesses of the dielectric layer 7 and the insulator layer 10 are set to a half or less of the wavelength of the signal transmitted to the signal line 8 and are set to, for example, 0.1 mm or more and 1.0 mm or less.

  In addition, the dielectric layer 7 or the insulator layer 10 may contain a large number of fillers. When the dielectric layer 7 or the insulator layer 10 is made of an organic material, the dielectric layer 7 or the insulator layer 10 contains a filler so that the viscosity of the dielectric layer 7 or the insulator layer 10 before curing is increased. The thickness dimension of the dielectric layer 7 or the insulator layer 10 can be made close to a desired value. The filler is spherical, the filler diameter is set to, for example, 0.05 μm to 6 μm, and the coefficient of thermal expansion is, for example, −5 ppm / ° C. to 5 ppm / ° C. The filler is made of, for example, silicon oxide, silicon carbide, aluminum oxide, aluminum nitride, or aluminum hydroxide.

  Further, the relative dielectric constant of the filler contained in the dielectric layer 7 or the insulator layer 10 can be set smaller than the relative dielectric constant of the material constituting the dielectric layer 7 or the insulator layer 10. Thus, by using a low dielectric constant filler smaller than the dielectric constant of the dielectric layer 7 or the insulator layer 10, the dielectric layer 6 as a whole can be further reduced in dielectric constant, and the signal line 8 The transmission efficiency of the transmitted signal can be improved.

  The filler can be an insulating filler. By making the filler insulative, the influence on the characteristic impedance of the signal transmitted to the signal line 8 can be reduced.

  The insulator layer 10 is provided on the dielectric layer 7 and across the signal line 8. In the state where the input / output terminal 6 is provided in the through groove D, the length from the inner side of the insulator layer 10 to the outer side of the frame body when viewed in plan is the length from the inner side of the frame body 5 when viewed in plan. It is set larger than the thickness width to the outside of the body.

  The height position of the upper surface of the input / output terminal 6 is set higher than the height position of the upper surface of the frame body 5. Since the height position of the upper surface of the input / output terminal 6 is higher than the height position of the upper surface of the frame body 5, stress applied to the input / output terminal 6 from the frame body 5 is received by the entire side surface of the input / output terminal 6. Can do. As a result, the input / output terminal 6 can disperse the stress received from the frame body 5, and the occurrence of cracks in the input / output terminal 6 can be suppressed. In the input / output terminal 6, the length from the lower surface of the ground layer 9 to the upper surface of the insulator layer 10 is set to, for example, 1 mm or more and 20 mm or less.

  A seal ring 11 is brazed onto the frame 5 via an adhesive g2 such as a brazing material. The brazing material is made of, for example, silver, copper, gold, aluminum, or magnesium, and may contain an additive such as nickel, cadmium, or phosphorus.

  Here, the material of the adhesive g2 is selected so that the Young's modulus of the adhesive g2 is smaller than the Young's modulus of the frame body 5. By making the Young's modulus of the adhesive g2 smaller than the Young's modulus of the frame body 5, the stress received from the frame body 5 can be reduced by the adhesive g2 deforming the stress caused by thermal deformation of the frame body 5. it can. As a result, the stress applied to the input / output terminal 6 from the frame 5 can be reduced, and the occurrence of cracks in the input / output terminal 6 can be suppressed. The Young's modulus of the adhesive g2 is set to, for example, 50 GPa or more and 95 GPa or less.

  The seal ring 11 is a frame-like member that overlaps the frame body 5 and the input / output terminal 6 provided on the substrate 2 when viewed in plan. The seal ring 11 is made of a buffer material having excellent thermal conductivity, such as copper, iron, tungsten, molybdenum, nickel, or cobalt.

  A lid 12 is provided on the seal ring 11. The lid 12 is provided on the seal ring 11 in a state where the element 3 is mounted in the mounting region R. The lid body 12 has a function of sealing a space surrounded by the substrate 2 and the frame body 5. The lid 12 is brazed onto the frame 5 via a brazing material, for example. Note that the lid 12 is made of, for example, a metal material such as copper, iron, tungsten, molybdenum, nickel, or cobalt, or an alloy containing these metal materials.

  FIG. 6 is a plan view showing a joint portion between the input / output terminal 6 and the frame 5.

  A pair of end portions 5 a of the frame body 5 facing each other with the input / output terminal 6 interposed therebetween are curved toward the outside of the frame body 5. The end 5a of the frame 5 connected to the input / output terminal 6 is curved in a plan view, so that the end 5a in contact with the input / output terminal 6 is curved even if the frame 5 undergoes thermal expansion. Therefore, the stress transmitted from the end 5a to the input / output terminal 6 can be relaxed. As a result, the occurrence of stress concentration on both side surfaces of the input / output terminal 6 can be suppressed. In addition, the edge part 5a of the frame 5 may be curving toward the inner side of the frame 5, as shown in FIG. Further, as shown in FIG. 8, the pair of end portions 5 a of the frame 5 may be curved toward the inside of the frame 5 and the other may be curved toward the outside of the frame 5. .

  A brazing filler fillet 13 is formed between the pair of end portions 5 a of the frame 5 and the input / output terminal 6. By forming the brazing filler fillet 13 between the two, the effect that the area where the input / output terminal 6 is bonded to the frame 5 can be expanded, and the bonding force between the frame 5 and the input / output terminal 6 is improved. In other words, the hermetic sealing inside the package can be maintained well.

  The corner C of the frame 5 that is the outer surface of the frame 5 in plan view is formed in a curved surface. Since the corner portion C of the frame body 5 is curved, even if the frame body 5 undergoes thermal expansion due to heat, the stress repelled from the side surface of the input / output terminal 6 at the corner portion C of the frame body 5 Can be absorbed and relaxed. As a result, the occurrence of cracks at the corners C of the frame 5 can be suppressed. Furthermore, the occurrence of cracks in the input / output terminal 6 can be suppressed.

  The mounting structure 1 can be configured by flip-chip mounting the element 3 on the element storage package 2 via bumps such as solder. When a semiconductor element such as an IC or LSI is mounted, for example, silicon, germanium, gallium arsenide, gallium arsenide phosphorus, gallium nitride, or silicon carbide can be used as the semiconductor element.

  According to the present embodiment, the inside of the frame 5 is likely to be hotter than the outside of the frame 5 due to heat generated from the signal line 8 of the input / output terminal 6. For this reason, the temperature of the signal line 8 rises, the electric resistance of the signal line 8 increases, and the power consumption of the input / output terminal 6 increases. By transmitting to the connected substrate 2 having excellent thermal conductivity, power consumption of the input / output terminal 6 can be suppressed. Furthermore, by suppressing the temperature of the input / output terminal 6 from becoming high, it is possible to suppress the temperature of the element 3 in the frame 5 from rising and the electrical characteristics of the element 3 from being changed. The electrical characteristics of 3 can be maintained well.

  According to the present embodiment, it is possible to suppress the temperature of the input / output terminal 6 from becoming high, and to provide an element storage package excellent in heat dissipation, and a mounting structure using the element storage package. Can do.

  The present invention is not limited to the above-described embodiments, and various changes and improvements can be made without departing from the scope of the present invention.

<Method for manufacturing mounting structure>
Here, a manufacturing method of the mounting structure 1 and the element storage package 2 shown in FIG. 1 will be described.

  First, each of the substrate 4 and the frame 5 is prepared. Each of the substrate 4 and the frame 5 is manufactured in a predetermined shape by using a metal processing method on a solidified ingot obtained by casting a molten metal material into a mold.

  Here, the mold of the frame 5 is manufactured in a shape in which the through groove D is provided, and is set in advance so that the end of the frame 5 taken out from the mold is curved in plan view.

  Next, the input / output terminal 6 is prepared. Here, a method for producing the input / output terminal 6 when the material of the dielectric layer 7 and the insulator layer 10 is an aluminum oxide sintered body, an aluminum nitride sintered body, a mullite sintered body, or the like will be described. .

  Specifically, when the material of the dielectric layer 7 and the insulator layer 10 is made of an aluminum oxide sintered body, first, an organic binder, a plasticizer is added to raw material powders such as aluminum oxide, silicon oxide, magnesium oxide and calcium oxide. Alternatively, a solvent or the like is added and mixed to form a slurry.

  Next, a mold for the dielectric layer 7 and the insulator layer 10 is prepared. Then, the mold is filled with a slurry-like aluminum oxide material, and the dielectric layer 7 and the insulator layer 10 before sintering are taken out.

  Moreover, a high melting point metal powder such as tungsten or molybdenum is prepared, and an organic binder, a plasticizer, a solvent, or the like is added to and mixed with the powder to obtain a metal paste.

  Then, a metal paste to be used as the signal line 8 and the ground layer 9 is applied to predetermined portions of the precursor dielectric layer 7 and the insulating layer 10 taken out by using, for example, a screen printing method.

  Next, the precursor insulator layer 10 is placed on the precursor dielectric layer 7 and pressed to be brought into close contact with each other. Then, by firing at a temperature of about 1600 ° C., the input / output terminal 6 made of ceramic can be produced.

  Then, the input / output terminals 6 are fitted and connected to the through grooves D of the prepared frame body 5 through a brazing material. In this way, the element storage package 2 can be manufactured.

  Next, the mounting structure 1 can be manufactured by mounting the element 3 on the element storage package 2 via solder and providing the lid 12 on the frame 5 via the seal ring 11.

DESCRIPTION OF SYMBOLS 1 Mounting structure 2 Element storage package 3 Element 4 Board | substrate 5 Frame 5a End part 6 Input / output terminal 7 Dielectric layer 8 Signal line 9 Ground layer 10 Insulator layer 11 Seal ring 12 Cover body 13 Brazing filler fillet R Mounting area D Through groove g1, g2 Adhesive C Corner

Claims (4)

A substrate having an element mounting region on the upper surface;
A frame provided on the substrate along the outer periphery of the mounting region, and having a through groove in which a top surface of the substrate is exposed in part;
A dielectric layer provided in the through groove and in contact with the exposed upper surface of the substrate and extending in and out of the frame, a signal line formed on the upper surface of the dielectric layer, and the dielectric layer comprising of a ground layer formed on the lower surface, and a output terminal having,
A pair of element storage packages , wherein a pair of end portions of the frame body facing each other with the input / output terminal interposed therebetween are curved toward the inside or the outside of the frame body . The device storage package according to claim 1 ,
One of the pair of end portions of the frame body is curved toward the inside of the frame body, and the other is curved toward the outside of the frame body. The element storage package according to claim 1 or 2 ,
An element storage package, wherein a brazing filler fillet is formed between the pair of end portions of the frame body and the input / output terminal. The element storage package according to any one of claims 1 to 3 ,
A mounting structure comprising an element to be mounted on the element storage package.

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