JP2005012166A - Ceramic wiring board - Google Patents

Ceramic wiring board Download PDF

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Publication number
JP2005012166A
JP2005012166A JP2004019880A JP2004019880A JP2005012166A JP 2005012166 A JP2005012166 A JP 2005012166A JP 2004019880 A JP2004019880 A JP 2004019880A JP 2004019880 A JP2004019880 A JP 2004019880A JP 2005012166 A JP2005012166 A JP 2005012166A
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Prior art keywords
metal plate
wiring board
insulating base
ceramic wiring
main surface
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Kazuhito Imuta
一仁 藺牟田
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Kyocera Corp
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Kyocera Corp
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124Aluminium (Al) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144Gold (Au) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched

Abstract

<P>PROBLEM TO BE SOLVED: To provide a ceramic wiring board, which can dissipate a heat generated from a mounted electronic part or the like efficiently to the outside and has excellent heat-dissipating properties. <P>SOLUTION: In the ceramic wiring board, a plurality of insulating layers composed of ceramics are laminated, a plurality of wiring conductors 2 are formed inside and a plurality of connecting pads 3 electrically connected to the wiring conductors 2 are formed to a main surface on the lower side. In the ceramic wiring board, the wiring board has an insulating base body 1, in which through-holes 1a penetrating between upper-lower main surfaces and having stepped sections A extending over the whole periphery between an internal side face and the lower-side main surface are formed at a central section; ball-shaped terminals 5 mounted on the pads 3 and metal plates 6, which have projecting sections at the centers of the top faces of tabular sections and in which the top faces of the tabular sections in the peripheries of the projecting sections are joined with the undersides of the stepped sections A. In the wiring board, the top faces of the projecting sections of the metal plates 6 and the upper-side main surface of the insulating base body 1 are formed on the same plane, and the undersides of the metal plates 6 and the lower ends of the terminals 5 are formed in the same height. <P>COPYRIGHT: (C)2005,JPO&amp;NCIPI

Description

本発明は放熱用の金属板を有するセラミック配線基板に関するものであり、特に放熱用の金属板によって熱放散特性に優れたセラミック配線基板に関するものである。   The present invention relates to a ceramic wiring board having a metal plate for heat dissipation, and more particularly to a ceramic wiring board having excellent heat dissipation characteristics due to a metal plate for heat dissipation.

従来、半導体素子や容量素子等の電子部品を搭載するセラミック配線基板は、酸化アルミニウム質焼結体等のセラミックスから成る絶縁基体の上面に電子部品が搭載される搭載部を有し、搭載部から絶縁基体の下面等にかけて配線導体を形成した構成である。   Conventionally, a ceramic wiring board on which electronic components such as semiconductor elements and capacitive elements are mounted has a mounting portion on which an electronic component is mounted on the upper surface of an insulating base made of ceramics such as an aluminum oxide sintered body. In this configuration, a wiring conductor is formed over the lower surface of the insulating substrate.

このような従来のセラミックス配線基板の一例を図3に示す。図3において、11は、酸化アルミニウム質焼結体等のセラミックスから成る複数の絶縁層が積層されて成り、上面に電子部品が搭載される絶縁基体、12は絶縁基体11の上面の電子部品が搭載される部位から絶縁基体11の下面にかけて形成された配線導体である。この配線導体12のうち絶縁基体11の下面にある導出端部には、外部接続用の接続パッド13が形成されている。   An example of such a conventional ceramic wiring board is shown in FIG. In FIG. 3, reference numeral 11 denotes an insulating base formed by laminating a plurality of insulating layers made of ceramics such as an aluminum oxide sintered body, and an electronic component is mounted on the upper surface. Reference numeral 12 denotes an electronic component on the upper surface of the insulating base 11. It is a wiring conductor formed from the part to be mounted to the lower surface of the insulating base 11. A connection pad 13 for external connection is formed on the lead-out end portion of the wiring conductor 12 on the lower surface of the insulating base 11.

絶縁基体11の上面にIC,LSI等の半導体素子14を搭載するとともに、半導体素子14の電極を配線導体12の露出部分にボンディングワイヤ15を介して接続し、半導体素子14を封止樹脂18等により覆って封止することにより半導体装置が構成される。半田ボール16は、例えば半田ボール16を形成する半田と同じ材料から成る半田17で半田付けすることにより、接続パッド13に接合されている。   A semiconductor element 14 such as an IC or LSI is mounted on the upper surface of the insulating base 11, and the electrode of the semiconductor element 14 is connected to an exposed portion of the wiring conductor 12 via a bonding wire 15 so that the semiconductor element 14 is sealed with a sealing resin 18 or the like. A semiconductor device is formed by covering and sealing with. The solder balls 16 are joined to the connection pads 13 by soldering with, for example, solder 17 made of the same material as the solder forming the solder balls 16.

そして、接続パッド13を半田ボール16を介して外部回路基板の回路導体に接続することにより半導体装置が外部回路基板に実装され、半導体素子14が外部電気回路と電気的に接続される。   Then, by connecting the connection pads 13 to the circuit conductors of the external circuit board via the solder balls 16, the semiconductor device is mounted on the external circuit board, and the semiconductor element 14 is electrically connected to the external electric circuit.

このような従来のセラミック配線基板を用いて成る半導体装置においては、半導体素子14で発生した熱は、絶縁基体11を介して絶縁基体11の下面側に伝達されるとともに半田ボール16を介して外部回路基板等へ放出される。   In a semiconductor device using such a conventional ceramic wiring board, heat generated in the semiconductor element 14 is transmitted to the lower surface side of the insulating base 11 through the insulating base 11 and externally connected via the solder balls 16. Released to a circuit board or the like.

なお、半導体素子14等の電子部品を覆う封止用の樹脂は一般に熱抵抗が大きいため、この樹脂を介して放出される熱量は、絶縁基体11および半田ボール16を介して放出される熱量よりも小さいため、通常、電子部品で発生する熱の放出にはあまり寄与しない。   Since the sealing resin that covers the electronic component such as the semiconductor element 14 generally has a large thermal resistance, the amount of heat released through the resin is larger than the amount of heat released through the insulating substrate 11 and the solder balls 16. Therefore, it does not contribute much to the release of heat usually generated in electronic parts.

しかしながら、このような従来のセラミック配線基板においては、半導体素子から発生した熱が、熱抵抗の大きいセラミックスから成る絶縁基体11を伝わり、半田ボール16を介して外部回路基板等に放出されるため、熱を効果的に放出させることができないという問題があった。   However, in such a conventional ceramic wiring board, the heat generated from the semiconductor element is transmitted through the insulating base 11 made of ceramics having a large thermal resistance, and is released to the external circuit board or the like via the solder balls 16. There was a problem that heat could not be released effectively.

このような問題に対し、絶縁基体の中央部に、上下主面間を貫通する貫通孔を形成するとともに、この貫通孔の下側を塞ぐようにして絶縁基体の下側主面に金属板を取着した構造のセラミック配線基板が提案されている(例えば、特許文献1参照)。   To solve such a problem, a through hole penetrating between the upper and lower main surfaces is formed in the central portion of the insulating base, and a metal plate is placed on the lower main surface of the insulating base so as to close the lower side of the through hole. A ceramic wiring board having an attached structure has been proposed (see, for example, Patent Document 1).

このような構造のセラミック配線基板においては、貫通孔(貫通スロット)の下端側に金属板(ヒートシンク)の上面が露出しており、この金属板の露出した上面に半導体素子等の電子部品(半導体チップ)が直接搭載されることから、電子部品で発生した熱は直接金属板に伝わって効果的に吸収されるとともに金属板の下面側から外部回路基板等に放出され、放熱性を向上させることができる。
特開平9−186272号公報
In the ceramic wiring board having such a structure, the upper surface of the metal plate (heat sink) is exposed at the lower end side of the through hole (through slot), and an electronic component (semiconductor) such as a semiconductor element is exposed on the exposed upper surface of the metal plate. Since the chip) is directly mounted, the heat generated in the electronic component is transmitted directly to the metal plate and effectively absorbed, and is released from the lower surface side of the metal plate to the external circuit board, etc. to improve heat dissipation. Can do.
JP-A-9-186272

しかしながら、絶縁基体の中央部に貫通孔を形成するとともに、この貫通孔の下側を塞ぐようにして、絶縁基体の下側主面に金属板を取着した構造のセラミック配線基板においても、従来の、セラミックスから成る絶縁基体を介して熱が伝わる構造のセラミック配線基板に比べて放熱性は向上するものの、金属板が平板状であり、絶縁基体の下面に接合される構造であるため、セラミック配線基板の薄型化を図る上で、金属板の高さをあまり高くすることができない。このため、金属板の体積をあまり大きくすることができず、金属板による熱の吸収、放出を、近時の高集積化、高機能化しつつある電子部品の大きな発熱量に対応させて、効率よく行うことが依然として難しいという問題があった。   However, a ceramic wiring board having a structure in which a through hole is formed in the central portion of the insulating base and a metal plate is attached to the lower main surface of the insulating base so as to close the lower side of the through hole is also conventionally used. Although the heat dissipation is improved compared to the ceramic wiring board having a structure in which heat is transmitted through an insulating base made of ceramic, the metal plate is flat and joined to the lower surface of the insulating base. In order to reduce the thickness of the wiring board, the height of the metal plate cannot be increased too much. For this reason, the volume of the metal plate cannot be increased so much that the absorption and release of heat by the metal plate correspond to the large amount of heat generated by electronic components that have recently become highly integrated and highly functional. There was a problem that it was still difficult to do well.

本発明は、このような従来の問題点を解消するために完成されたものであり、その目的は、搭載される電子部品から発生する熱を効率良く外部に放出することが可能な、放熱性に優れたセラミック配線基板を提供することにある。   The present invention has been completed in order to solve such conventional problems, and its purpose is to dissipate heat generated from the mounted electronic components efficiently to the outside. It is to provide an excellent ceramic wiring board.

本発明のセラミック配線基板は、セラミックスから成る複数の絶縁層が積層されて成り、内部に複数の配線導体が形成されており、下側主面に複数の前記配線導体とそれぞれ電気的に接続された複数の接続パッドが形成されているとともに、中央部に上下主面間を貫通した、内側面と前記下側主面との間に全周にわたって段差部を有する貫通孔が形成されている絶縁基体と、前記接続パッドにそれぞれ取着されたボール状端子と、板状部の上面の中央に凸部を有し、該凸部の周囲の前記板状部の前記上面が前記段差部の下面に接合されている金属板とを具備しており、該金属板の前記凸部の上面と前記絶縁基体の上側主面とが同じ平面上にあり、かつ前記金属板の下面と前記ボール状端子の下端とが同じ高さであることを特徴とするものである。   The ceramic wiring board of the present invention is formed by laminating a plurality of insulating layers made of ceramics, and has a plurality of wiring conductors formed therein, and is electrically connected to the plurality of wiring conductors on the lower main surface, respectively. Insulation in which a plurality of connection pads are formed and a through hole having a stepped portion is formed between the inner side surface and the lower side main surface through the center portion between the upper side surface and the lower side main surface. A base, a ball-like terminal attached to each of the connection pads, and a convex portion at the center of the upper surface of the plate-like portion, and the upper surface of the plate-like portion around the convex portion is a lower surface of the step portion. The upper surface of the convex portion of the metal plate and the upper main surface of the insulating base are on the same plane, and the lower surface of the metal plate and the ball-shaped terminal The lower end of the .

また、本発明のセラミック配線基板は、上記構成において好ましくは、前記金属板の側面と前記貫通孔の内側面とが樹脂接着剤を介して接着されていることを特徴とするものである。   The ceramic wiring board of the present invention is preferably characterized in that the side surface of the metal plate and the inner side surface of the through hole are bonded via a resin adhesive in the above configuration.

また、本発明のセラミック配線基板は、上記構成において好ましくは、前記樹脂接着剤は、熱伝導率が前記絶縁基体よりも高いことを特徴とするものである。   In the ceramic wiring board of the present invention, preferably, the resin adhesive has a higher thermal conductivity than the insulating base.

本発明のセラミック配線基板は、セラミックスから成る複数の絶縁層が積層されて成り、内部に複数の配線導体が形成されており、下側主面に複数の配線導体とそれぞれ電気的に接続された複数の接続パッドが形成されているとともに、中央部に上下主面間を貫通した、内側面と下側主面との間に全周にわたって段差部を有する貫通孔が形成されている絶縁基体と、接続パッドにそれぞれ取着されたボール状端子と、板状部の上面の中央に凸部を有し、凸部の周囲の板状部の上面が段差部の下面に接合されている金属板とを具備しており、金属板の凸部の上面と絶縁基体の上側主面とが同じ平面上にあることから、金属板の凸部の上面に電子部品を直接搭載することができるとともに、搭載した電子部品が発した熱は直接金属板に伝達され、熱伝導率の高い金属板を介して効果的に放出させることができる。   The ceramic wiring board of the present invention is formed by laminating a plurality of insulating layers made of ceramics, a plurality of wiring conductors are formed therein, and the lower main surface is electrically connected to the plurality of wiring conductors, respectively. An insulating base formed with a plurality of connection pads and having a through hole having a stepped portion around the entire circumference between the inner side surface and the lower side main surface penetrating between the upper and lower main surfaces in the central portion; A ball-like terminal attached to each connection pad, and a metal plate having a convex portion at the center of the upper surface of the plate-like portion, and the upper surface of the plate-like portion around the convex portion being joined to the lower surface of the step portion Since the upper surface of the convex portion of the metal plate and the upper main surface of the insulating base are on the same plane, the electronic component can be directly mounted on the upper surface of the convex portion of the metal plate, The heat generated by the mounted electronic components is transferred directly to the metal plate, It can be effectively released through the high conductivity metal plate.

また、金属板は、上面の凸部が絶縁基体に形成された段差部を有する貫通孔内に入り込んで取着されていることから、この段差の分だけ高さを高くして体積を大きくすることができるため、電子部品で発生する熱を効率良く吸収するとともに下面側に放出することができ、その結果セラミック配線基板の放熱性を優れたものとすることができる。   Further, the metal plate is attached with the convex portion on the upper surface entering the through hole having the step portion formed on the insulating base, so that the volume is increased by the height of the step. Therefore, the heat generated in the electronic component can be efficiently absorbed and released to the lower surface side. As a result, the heat dissipation of the ceramic wiring board can be improved.

また、本発明のセラミック配線基板は、金属板の下面とボール状端子の下端とが同じ高さであることから、ボール状端子を外部回路基板の回路導体に接続する際に、金属板の下面を外部回路基板に容易かつ確実に接合させることができ、金属板から外部回路基板への熱の伝達を確実なものとすることができる。これにより、搭載する電子部品の性能を低下させることがない、高機能かつ高信頼性の電子装置を構成することができる。   In addition, since the lower surface of the metal plate and the lower end of the ball-shaped terminal are the same height, the ceramic wiring board of the present invention has a lower surface of the metal plate when connecting the ball-shaped terminal to the circuit conductor of the external circuit board. Can be easily and reliably bonded to the external circuit board, and heat transfer from the metal plate to the external circuit board can be ensured. Thereby, it is possible to configure a highly functional and highly reliable electronic device that does not degrade the performance of the electronic component to be mounted.

また、本発明のセラミック配線基板は、上記構成において好ましくは、金属板の側面と貫通孔の内側面とが樹脂接着剤を介して接着されていることから、金属板の側面からも樹脂接着剤を介して絶縁基体に熱を伝えることができるので、金属板から絶縁基体への熱の伝導はより確実なものとなる。   In the ceramic wiring board of the present invention, preferably, the side surface of the metal plate and the inner side surface of the through hole are bonded to each other through a resin adhesive in the above configuration. Since heat can be transferred to the insulating base via the metal plate, heat conduction from the metal plate to the insulating base becomes more reliable.

さらに、本発明のセラミック配線基板は、上記構成において好ましくは、樹脂接着剤は、熱伝導率が前記絶縁基体よりも高いものであることから、金属板の側面からも樹脂接着剤を介して絶縁基体により一層効率良く熱を伝えることができるので、金属板から絶縁基体への熱の伝導はさらに確実なものとなる。   Furthermore, the ceramic wiring board of the present invention preferably has the above-described configuration, and the resin adhesive has a higher thermal conductivity than the insulating base, and therefore is insulated from the side surface of the metal plate via the resin adhesive. Since heat can be more efficiently transmitted by the base, the conduction of heat from the metal plate to the insulating base is further ensured.

本発明のセラミック配線基板について以下に詳細に説明する。図1は本発明のセラミック配線基板を用いた電子装置の断面図であり、図1において、1は絶縁基体、2は配線導体、3は接続パッド、5は接合材4を介して接続パッド3に取着されたボール状端子、6は金属板である。主としてこれらの絶縁基体1、配線導体2、接続パッド3、ボール状端子5により電子部品7を搭載するセラミック配線基板が構成される。   The ceramic wiring board of the present invention will be described in detail below. FIG. 1 is a sectional view of an electronic device using a ceramic wiring board of the present invention. In FIG. 1, 1 is an insulating substrate, 2 is a wiring conductor, 3 is a connection pad, 5 is a connection pad 3 via a bonding material 4. A ball-shaped terminal 6 attached to the metal plate 6 is a metal plate. A ceramic wiring board on which an electronic component 7 is mounted is mainly constituted by the insulating base 1, the wiring conductor 2, the connection pad 3, and the ball-shaped terminal 5.

本発明における絶縁基体1は、酸化アルミニウ質焼結体、ガラスセラミック焼結体等のセラミックスから成る複数の絶縁層が積層されて成り、例えば、各絶縁層が酸化アルミニウム質焼結体から成る場合以下のようにして作製される。酸化アルミニウム、酸化珪素、酸化カルシウム、酸化マグネシウム等の原料粉末に適当な有機バインダ、溶剤を添加混合して泥漿状のスラリーを作製し、このスラリーをドクターブレード法やカレンダーロール法等のシート成形技術によりシート状となすことによって、複数のセラミックグリーンシート(セラミック生シートで、以下、グリーンシートともいう)を得る。これらのグリーンシートを所定の順に上下に積層してグリーンシート成形体となし、このグリーンシート成形体を還元雰囲気中で約1600℃の高温で焼成することによって製作される。   The insulating substrate 1 in the present invention is formed by laminating a plurality of insulating layers made of ceramics such as an aluminum oxide sintered body and a glass ceramic sintered body. For example, each insulating layer is made of an aluminum oxide sintered body. It is produced as follows. An appropriate organic binder and solvent are added to and mixed with raw material powders such as aluminum oxide, silicon oxide, calcium oxide, and magnesium oxide to produce a slurry in the form of a slurry. Thus, a plurality of ceramic green sheets (ceramic raw sheets, hereinafter also referred to as green sheets) are obtained. These green sheets are laminated in a predetermined order to form a green sheet molded body, and the green sheet molded body is manufactured by firing at a high temperature of about 1600 ° C. in a reducing atmosphere.

絶縁基体1の内部には、複数の配線導体2が、例えば、上側主面から下側主面等にかけて形成されている。また、絶縁基体1の下側主面には複数の配線導体2にそれぞれ電気的に接続された接続パッド3が形成されている。この配線導体2および接続パッド3は、セラミック配線基板に搭載される電子部品7の電極を外部に導出し接続するための接続用導体として機能し、タングステンやモリブデン、銅、銀等の金属により形成されている。すなわち、配線導体2および接続パッド3は、例えば同種の金属により形成されており、ともにタングステンから成る場合、タングステン粉末に適当な有機バインダ、溶剤を添加混合して得た金属ペーストを、絶縁基体1となるグリーンシートの表面に予めスクリーン印刷法等により所定パターンに印刷塗布しておくことによって形成される。   In the insulating base 1, a plurality of wiring conductors 2 are formed, for example, from the upper main surface to the lower main surface. In addition, connection pads 3 that are electrically connected to the plurality of wiring conductors 2 are formed on the lower main surface of the insulating base 1. The wiring conductor 2 and the connection pad 3 function as a connection conductor for leading and connecting the electrode of the electronic component 7 mounted on the ceramic wiring board to the outside, and are formed of a metal such as tungsten, molybdenum, copper, or silver. Has been. That is, the wiring conductor 2 and the connection pad 3 are made of, for example, the same kind of metal. When both are made of tungsten, a metal paste obtained by adding and mixing an appropriate organic binder and solvent to tungsten powder is used as the insulating base 1. It is formed by previously printing and applying a predetermined pattern on the surface of the green sheet to be obtained by screen printing or the like.

また、接続パッド3には、それぞれボール状端子5が接合材4を介して接合する等の手段により取着されている。このボール状端子5は、セラミック配線基板を外部電気回路に電気的に接続するための外部接続用端子として機能し、鉄−ニッケル合金や鉄−ニッケル−コバルト合金等の金属により形成される。なお、接合材4は、金属板6を絶縁基体1に接合する銀ロウと同様の銀ロウ等とすることがよい。同じ銀ロウにしておくと、ボール状端子5と金属板6とを同じロウ付け作業で一度に接合できるため、セラミック配線基板の生産性を向上させることができる。   Further, the ball-shaped terminals 5 are attached to the connection pads 3 by means such as bonding via the bonding material 4. The ball-shaped terminal 5 functions as an external connection terminal for electrically connecting the ceramic wiring board to an external electric circuit, and is formed of a metal such as iron-nickel alloy or iron-nickel-cobalt alloy. Note that the bonding material 4 is preferably a silver brazing similar to the silver brazing that bonds the metal plate 6 to the insulating base 1. If the same silver brazing is used, the ball-shaped terminal 5 and the metal plate 6 can be joined at the same time by the same brazing operation, so that the productivity of the ceramic wiring board can be improved.

また本発明のセラミック配線基板は、絶縁基体1の中央部に、絶縁基体1の上下主面間を貫通した、内側面と下側主面との間に全周にわたって段差部Aを有する貫通孔1aが形成されている。この貫通孔1aの内部には、金属板6が挿入されて接合されている。板状部である金属板6は、銅−タングステン合金やアルミニウム、銅、アルミニウム合金、銅合金等の熱伝導性の良好な金属から成り、板状部の上面の中央に凸部を有する形状である。   Further, the ceramic wiring board of the present invention has a through-hole having a stepped portion A over the entire circumference between the inner side surface and the lower main surface, which penetrates between the upper and lower main surfaces of the insulating substrate 1 in the central portion of the insulating substrate 1. 1a is formed. A metal plate 6 is inserted and joined inside the through hole 1a. The metal plate 6, which is a plate-like portion, is made of a metal having good thermal conductivity such as a copper-tungsten alloy, aluminum, copper, an aluminum alloy, or a copper alloy, and has a shape having a convex portion at the center of the upper surface of the plate-like portion. is there.

本発明において、金属板6の凸部の周囲の板状部の上面を絶縁基体1の貫通孔1a内の段差部Aの下面に接合することにより、金属板6は絶縁基体1に取着されており、金属板6の凸部の上面と絶縁基体1の上側主面とは同じ平面上にあり、かつ金属板6の下面とボール状端子5の下端とは同じ高さである。   In the present invention, the metal plate 6 is attached to the insulating substrate 1 by bonding the upper surface of the plate-like portion around the convex portion of the metal plate 6 to the lower surface of the stepped portion A in the through hole 1a of the insulating substrate 1. The upper surface of the convex portion of the metal plate 6 and the upper main surface of the insulating base 1 are on the same plane, and the lower surface of the metal plate 6 and the lower end of the ball-shaped terminal 5 are the same height.

なお、金属板6の凸部の周囲の板状部の上面と、貫通孔1a内の段差部Aの下面との接合は、例えば、段差部Aの下面に予め接続パッド3と同様の金属から成るロウ付け用のメタライズ層を形成しておき、このメタライズ層と金属板6とを、銀ロウ等のロウ材を介してロウ付けすること等により行うことができる。   In addition, the upper surface of the plate-shaped portion around the convex portion of the metal plate 6 and the lower surface of the stepped portion A in the through hole 1a are bonded to, for example, the lower surface of the stepped portion A from the same metal as the connection pad 3 in advance. A metallization layer for brazing is formed, and this metallization layer and the metal plate 6 can be brazed via a brazing material such as silver brazing.

絶縁基体1の中央部に貫通孔1aを形成し、その貫通孔1a内に金属板6を、凸部の上面と絶縁基体1の上側主面とが同じ平面上にあるようにして接合したことにより、金属板6の凸部の上面を電子部品7の搭載部として機能させることができ、搭載した電子部品7が発生する熱は直接金属板6に伝達され、熱伝導率の高い金属板6を介して効果的に放出させることができる。   A through hole 1a is formed in the central portion of the insulating base 1, and the metal plate 6 is joined in the through hole 1a so that the upper surface of the convex portion and the upper main surface of the insulating base 1 are on the same plane. Thus, the upper surface of the convex portion of the metal plate 6 can function as a mounting portion for the electronic component 7, and heat generated by the mounted electronic component 7 is directly transmitted to the metal plate 6, and the metal plate 6 having high thermal conductivity. Can be effectively released.

この場合、金属板6の凸部の上面と絶縁基体1の上側主面とが同じ平面上にあるため、金属板6の凸部の上面に電子部品7を搭載するときに、絶縁基体1が高すぎて搭載の妨げになることはない。また、電子部品7を封止用の樹脂等で覆って封止する際に、凸部が高すぎて電子部品7の封止が困難となるようなことはない。その結果、セラミック配線基板に電子部品7を搭載して成る電子装置の作製を容易かつ確実なものとすることができる。   In this case, since the upper surface of the convex portion of the metal plate 6 and the upper main surface of the insulating base 1 are on the same plane, the insulating base 1 is mounted when the electronic component 7 is mounted on the upper surface of the convex portion of the metal plate 6. It is too expensive to interfere with installation. In addition, when the electronic component 7 is covered and sealed with a sealing resin or the like, the convex portion is not too high and it is not difficult to seal the electronic component 7. As a result, it is possible to easily and reliably produce an electronic device in which the electronic component 7 is mounted on the ceramic wiring board.

また、貫通孔1aが内側面の全周にわたって段差部Aを有していることから、貫通孔1a内に入り込む金属板6の体積を、段差部Aの分だけ大きくすることができるため、電子部品7で発生する熱を金属板6で効率良く吸収するとともに下面側に放出することができ、セラミック配線基板の放熱性を優れたものとすることができる。   Further, since the through hole 1a has the stepped portion A over the entire inner surface, the volume of the metal plate 6 entering the through hole 1a can be increased by the amount of the stepped portion A. The heat generated in the component 7 can be efficiently absorbed by the metal plate 6 and released to the lower surface side, so that the heat dissipation of the ceramic wiring board can be improved.

そして、絶縁基体1に接合された金属板6の凸部の上面に電子部品7をエポキシ樹脂等の樹脂接着剤により接着し、電子部品7の電極と絶縁基体1の上側主面に露出している配線導体2とをアルミニウム線や金線等のボンディングワイヤ8を介して電気的に接続した後、電子部品7およびその周囲の金属板6、絶縁基体1の露出表面をエポキシ樹脂やシリコーン樹脂等の樹脂から成る封止樹脂9で被覆することにより、電子装置として完成する。なお、電子部品7を封止樹脂9で被覆すること以外に、金属やセラミックス等から成る蓋体を、電子部品7を覆うようにして絶縁基体1の上側主面に接合してもよい。   Then, the electronic component 7 is bonded to the upper surface of the convex portion of the metal plate 6 bonded to the insulating base 1 with a resin adhesive such as an epoxy resin, and is exposed to the electrode of the electronic component 7 and the upper main surface of the insulating base 1. After the wiring conductor 2 is electrically connected via a bonding wire 8 such as an aluminum wire or a gold wire, the exposed surface of the electronic component 7 and the surrounding metal plate 6 and the insulating base 1 is epoxy resin, silicone resin or the like. By covering with a sealing resin 9 made of the above resin, an electronic device is completed. In addition to covering the electronic component 7 with the sealing resin 9, a lid made of metal, ceramics, or the like may be bonded to the upper main surface of the insulating base 1 so as to cover the electronic component 7.

このようにセラミック配線基板に電子部品7を搭載して成る電子装置は、図2に示すように、絶縁基体1の下側主面の接続パッド3に取着されたボール状端子5の下端部を外部回路基板30の回路導体(図示せず)に半田40等を介して接続することにより、電子部品7が、ボンディングワイヤ8、配線導体2、接続パッド3およびボール状端子5を介して外部電気回路に電気的に接続され、外部回路基板に実装される。   As shown in FIG. 2, the electronic device in which the electronic component 7 is mounted on the ceramic wiring board in this way has a lower end portion of the ball-like terminal 5 attached to the connection pad 3 on the lower main surface of the insulating base 1. Is connected to a circuit conductor (not shown) of the external circuit board 30 via solder 40 or the like, so that the electronic component 7 is externally connected via the bonding wire 8, the wiring conductor 2, the connection pad 3, and the ball-shaped terminal 5. It is electrically connected to an electric circuit and mounted on an external circuit board.

セラミック配線基板を外部回路基板30に実装する際、セラミック配線基板の貫通孔1a内に接合されている金属板6の下面と、ボール状端子5の下端とが同じ高さであることから、ボール状端子5を外部回路基板30の回路導体に接続するとともに、金属板6の下面を外部回路基板30に半田40等を介して容易かつ確実に接合させることができ、金属板6から外部回路基板30への熱の伝達を確実なものとすることができる。これにより、搭載する電子部品7の性能を低下させることがない、高機能かつ高信頼性の電子装置を作製でき、また外部回路基板30への高信頼性の実装構造を得ることができる。   When the ceramic wiring board is mounted on the external circuit board 30, the lower surface of the metal plate 6 joined in the through hole 1 a of the ceramic wiring board and the lower end of the ball-shaped terminal 5 are at the same height. The terminal 5 can be connected to the circuit conductor of the external circuit board 30 and the lower surface of the metal plate 6 can be easily and reliably joined to the external circuit board 30 via the solder 40 or the like. Heat transfer to 30 can be ensured. Thereby, a highly functional and highly reliable electronic device that does not deteriorate the performance of the electronic component 7 to be mounted can be manufactured, and a highly reliable mounting structure on the external circuit board 30 can be obtained.

なお、本発明のセラミック配線基板による電子装置を外部回路基板30に実装するための半田40は、ボール状端子5を絶縁基体1の接続パッド3に接合するための接合材4よりも融点が低いものを使用する。接合材4の方が半田40よりも融点が低いと、ボール状端子5や金属板6を外部回路基板30に接続するときの加熱により、接合材4が溶けてボール状端子5が接続パッド3から離脱するおそれがある。   The solder 40 for mounting the electronic device using the ceramic wiring board of the present invention on the external circuit board 30 has a lower melting point than the bonding material 4 for bonding the ball-shaped terminal 5 to the connection pad 3 of the insulating base 1. Use things. If the melting point of the bonding material 4 is lower than that of the solder 40, the bonding material 4 is melted by heating when the ball-shaped terminals 5 and the metal plate 6 are connected to the external circuit board 30, and the ball-shaped terminals 5 are connected to the connection pads 3. There is a risk of leaving.

本発明において、金属板6の下面とボール状端子5の下端とは完全に同じ高さでなくてもよい。ある程度の高さの差は、ボール状端子5や金属板6を外部回路基板30に接続するための半田40等の厚みで吸収することができるので、200μm程度の高さの差までは許容できる。   In the present invention, the lower surface of the metal plate 6 and the lower end of the ball terminal 5 do not have to be completely the same height. The difference in height to some extent can be absorbed by the thickness of the solder 40 or the like for connecting the ball-shaped terminal 5 or the metal plate 6 to the external circuit board 30, so that a difference in height of about 200 μm is acceptable. .

このように、金属板6の下面とボール状端子5の下端との間で高さの差が生じる場合、ボール状端子5の高さ(地面からの高さ)が金属板6の下面よりも低い方、すなわちボール状端子5の下端が金属板6の下面よりも下側に出るようにすることが好ましい。金属板6の下面がボール状端子5の下端よりも低くなると、金属板6に妨げられてボール状端子5を外部回路基板30の回路導体に正常かつ確実に接続することが難しくなる。   As described above, when a difference in height occurs between the lower surface of the metal plate 6 and the lower end of the ball-shaped terminal 5, the height of the ball-shaped terminal 5 (height from the ground) is higher than that of the lower surface of the metal plate 6. It is preferable that the lower end, that is, the lower end of the ball-shaped terminal 5 protrudes below the lower surface of the metal plate 6. When the lower surface of the metal plate 6 is lower than the lower end of the ball-shaped terminal 5, it is difficult to connect the ball-shaped terminal 5 to the circuit conductor of the external circuit board 30 normally and reliably due to the metal plate 6.

また、本発明のセラミック配線基板は、金属板6の側面と貫通孔1aの内側面とが樹脂接着剤を介して接着されていることが好ましい。   In the ceramic wiring board of the present invention, the side surface of the metal plate 6 and the inner side surface of the through hole 1a are preferably bonded via a resin adhesive.

金属板6の側面と貫通孔1aの内側面とを樹脂接着剤20を介して接着しておくと、金属板6の側面からも樹脂接着剤20を介して絶縁基体1に熱を伝えることができるので、金属板6から絶縁基体1への熱の伝導はより確実なものとなる。   If the side surface of the metal plate 6 and the inner side surface of the through hole 1 a are bonded via the resin adhesive 20, heat can be transferred from the side surface of the metal plate 6 to the insulating substrate 1 via the resin adhesive 20. Therefore, heat conduction from the metal plate 6 to the insulating substrate 1 is more reliable.

樹脂接着剤20は、エポキシ樹脂やガラスエポキシ,ポリイミド等の有機樹脂から成り、例えば、セラミック配線基板を外部回路基板30に実装する前に、金属板6の側面と貫通孔1aの内側面との間に樹脂接着剤20を注入し充填することにより形成される。   The resin adhesive 20 is made of an organic resin such as epoxy resin, glass epoxy, or polyimide. For example, before the ceramic wiring board is mounted on the external circuit board 30, the side surface of the metal plate 6 and the inner side surface of the through hole 1a are formed. It is formed by injecting and filling the resin adhesive 20 between them.

また、本発明のセラミック配線基板は、樹脂接着剤20は、熱伝導率が絶縁基体1よりも高いことが好ましい。   In the ceramic wiring board of the present invention, the resin adhesive 20 preferably has a higher thermal conductivity than the insulating substrate 1.

樹脂接着剤20について、熱伝導率を絶縁基体1よりも高いものとしておくと、金属板6の側面からも樹脂接着剤20を介して絶縁基体1により一層効率良く熱を伝えることができるので、金属板6から絶縁基体1への熱の伝導はさらに確実なものとなる。   If the thermal conductivity of the resin adhesive 20 is higher than that of the insulating base 1, heat can be more efficiently transmitted from the side of the metal plate 6 to the insulating base 1 via the resin adhesive 20. Heat conduction from the metal plate 6 to the insulating substrate 1 is further ensured.

絶縁基体1よりも熱伝導率の高い樹脂接着剤20としては、熱伝導率が12W/m・℃以上の高熱伝導性の無機物または金属から成るフィラー粒子を充填したエポキシ等の有機樹脂等を用いることができる。   As the resin adhesive 20 having a higher thermal conductivity than that of the insulating substrate 1, an organic resin such as epoxy filled with filler particles made of a highly thermally conductive inorganic substance or metal having a thermal conductivity of 12 W / m · ° C. or higher is used. be able to.

例えば、絶縁基体1が酸化アルミニウム質焼結体(熱伝導率約14W/m・℃)から成る場合であれば、樹脂接着剤20の熱伝導率は15W/m・℃以上がよく、この場合高熱伝導性のフィラーを充填したものを用いることが好ましい。   For example, if the insulating substrate 1 is made of an aluminum oxide sintered body (thermal conductivity of about 14 W / m · ° C.), the thermal conductivity of the resin adhesive 20 is preferably 15 W / m · ° C. or more. It is preferable to use a material filled with a highly heat conductive filler.

このような、絶縁基体1よりも熱伝導率の高い樹脂接着剤20は、例えば、エポキシ樹脂等の樹脂接着剤に、予め金属等のフィラー粒子を混合しておき、この混合物を貫通孔1aと金属板6との間に充填することにより形成される。   Such a resin adhesive 20 having a higher thermal conductivity than that of the insulating base 1 is prepared by mixing filler particles such as metal in advance with a resin adhesive such as an epoxy resin, for example, and using this mixture as a through hole 1a. It is formed by filling between the metal plates 6.

なお、本発明は上述の実施の形態の例に限定されるものではなく、本発明の要旨を逸脱しない範囲であれば種々の変更は可能である。例えば、金属板6の上面の凸部の側面を、絶縁基体1の貫通孔1aの内側面に接合するようにして、金属板6を絶縁基体1により一層強固に接合させるようにしてもよい。また、金属板6の側面の下端部にボール状端子5の高さに相当する幅以下の幅で、鍔状部等の凸出部を全周にわたって形成すると、金属板6の熱放射による放熱性および外部回路基板30への伝熱による放熱性を高めることができるとともに、金属板6の外部回路基板30に対する接合強度を向上させることができる。また、この場合、金属板6の側面の下端部に形成された凸出部を鍔状部とし、その鍔状部の表面を下方に向かうに伴って外側に広がる傾斜面とすれば、凸出部の下面を広くして凸出部を大きくしても凸出部が絶縁基体1の下側主面に当接しにくくなるとともに、凸出部の熱放射による放熱性を高めることができ、さらに金属板6の外部回路基板30に対する接合強度をさらに向上させることができる。   Note that the present invention is not limited to the above-described embodiments, and various modifications can be made without departing from the scope of the present invention. For example, the metal plate 6 may be bonded more firmly to the insulating substrate 1 by bonding the side surface of the convex portion on the upper surface of the metal plate 6 to the inner surface of the through hole 1 a of the insulating substrate 1. Further, if a protruding portion such as a bowl-shaped portion is formed at the lower end portion of the side surface of the metal plate 6 with a width equal to or less than the height of the ball-shaped terminal 5 over the entire circumference, heat dissipation by heat radiation of the metal plate 6 is performed. And heat dissipation by heat transfer to the external circuit board 30 can be enhanced, and the bonding strength of the metal plate 6 to the external circuit board 30 can be improved. Further, in this case, if the protruding portion formed at the lower end portion of the side surface of the metal plate 6 is a hook-shaped portion, and the surface of the hook-shaped portion is an inclined surface that spreads outward as it goes downward, the protruding portion Even if the lower surface of the portion is widened and the protruding portion is enlarged, the protruding portion is less likely to come into contact with the lower main surface of the insulating base 1, and the heat dissipation by heat radiation of the protruding portion can be improved. The bonding strength of the metal plate 6 to the external circuit board 30 can be further improved.

本発明のセラミック配線基板を用いた電子装置の実施の形態の一例を示す断面図である。It is sectional drawing which shows an example of embodiment of the electronic device using the ceramic wiring board of this invention. 本発明のセラミック配線基板を外部回路基板に実装した状態を示す断面図である。It is sectional drawing which shows the state which mounted the ceramic wiring board of this invention in the external circuit board. 従来のセラミック配線基板の断面図である。It is sectional drawing of the conventional ceramic wiring board.

符号の説明Explanation of symbols

1・・・絶縁基体
1a・・貫通孔
2・・・配線導体
3・・・接続パッド
4・・・接合材
5・・・ボール状端子
6・・・金属板
7・・・電子部品
A・・・段差部
20・・樹脂接着剤
DESCRIPTION OF SYMBOLS 1 ... Insulation base | substrate 1a ... Through-hole 2 ... Wiring conductor 3 ... Connection pad 4 ... Bonding material 5 ... Ball-shaped terminal 6 ... Metal plate 7 ... Electronic component A ..Step part 20 ... Resin adhesive

Claims (3)

セラミックスから成る複数の絶縁層が積層されて成り、内部に複数の配線導体が形成されており、下側主面に複数の前記配線導体とそれぞれ電気的に接続された複数の接続パッドが形成されているとともに、中央部に上下主面間を貫通した、内側面と前記下側主面との間に全周にわたって段差部を有する貫通孔が形成されている絶縁基体と、前記接続パッドにそれぞれ取着されたボール状端子と、板状部の上面の中央に凸部を有し、該凸部の周囲の前記板状部の前記上面が前記段差部の下面に接合されている金属板とを具備しており、該金属板の前記凸部の上面と前記絶縁基体の上側主面とが同じ平面上にあり、かつ前記金属板の下面と前記ボール状端子の下端とが同じ高さであることを特徴とするセラミック配線基板。 A plurality of insulating layers made of ceramics are laminated, a plurality of wiring conductors are formed inside, and a plurality of connection pads electrically connected to the plurality of wiring conductors are formed on the lower main surface. In addition, each of the connection pads is provided with an insulating base that has a through hole formed between the inner side surface and the lower main surface, and has a stepped portion around the entire circumference. An attached ball-shaped terminal, and a metal plate having a convex portion at the center of the upper surface of the plate-like portion, and the upper surface of the plate-like portion around the convex portion being joined to the lower surface of the step portion The upper surface of the convex portion of the metal plate and the upper main surface of the insulating base are on the same plane, and the lower surface of the metal plate and the lower end of the ball-shaped terminal are at the same height. A ceramic wiring board characterized by being. 前記金属板の側面と前記貫通孔の内側面とが樹脂接着剤を介して接着されていることを特徴とする請求項1記載のセラミック配線基板。 2. The ceramic wiring board according to claim 1, wherein a side surface of the metal plate and an inner side surface of the through hole are bonded via a resin adhesive. 前記樹脂接着剤は、熱伝導率が前記絶縁基体よりも高いことを特徴とする請求項2記載のセラミック配線基板。 The ceramic wiring board according to claim 2, wherein the resin adhesive has a thermal conductivity higher than that of the insulating base.
JP2004019880A 2003-05-28 2004-01-28 Ceramic wiring board Pending JP2005012166A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
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JP2003151620 2003-05-28
JP2004019880A JP2005012166A (en) 2003-05-28 2004-01-28 Ceramic wiring board

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015176971A (en) * 2014-03-14 2015-10-05 三菱電機株式会社 Semiconductor package and manufacturing method of the same
WO2020045480A1 (en) * 2018-08-29 2020-03-05 京セラ株式会社 Wiring board, electronic device and electronic module

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015176971A (en) * 2014-03-14 2015-10-05 三菱電機株式会社 Semiconductor package and manufacturing method of the same
WO2020045480A1 (en) * 2018-08-29 2020-03-05 京セラ株式会社 Wiring board, electronic device and electronic module
CN112585744A (en) * 2018-08-29 2021-03-30 京瓷株式会社 Wiring substrate, electronic device, and electronic module
JPWO2020045480A1 (en) * 2018-08-29 2021-09-02 京セラ株式会社 Wiring boards, electronics and electronic modules
EP3846202A4 (en) * 2018-08-29 2022-06-01 Kyocera Corporation Wiring board, electronic device and electronic module
US11582858B2 (en) 2018-08-29 2023-02-14 Kyocera Corporation Wiring substrate, electronic device and electronic module
JP7300454B2 (en) 2018-08-29 2023-06-29 京セラ株式会社 Wiring boards, electronic devices and electronic modules
US11930586B2 (en) 2018-08-29 2024-03-12 Kyocera Corporation Wiring substrate, electronic device and electronic module

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