JP5357379B2 - Light emitting device - Google Patents

Light emitting device Download PDF

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JP5357379B2
JP5357379B2 JP2006047492A JP2006047492A JP5357379B2 JP 5357379 B2 JP5357379 B2 JP 5357379B2 JP 2006047492 A JP2006047492 A JP 2006047492A JP 2006047492 A JP2006047492 A JP 2006047492A JP 5357379 B2 JP5357379 B2 JP 5357379B2
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light
led chips
sealing
emitting device
light emitting
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JP2007227679A (en
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健一郎 田中
裕 岩堀
一功 葛原
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Panasonic Corp
Panasonic Holdings Corp
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Panasonic Corp
Matsushita Electric Industrial Co Ltd
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Abstract

<P>PROBLEM TO BE SOLVED: To provide a light-emitting device capable of improving the mixed color properties of the light of an LED chip and reducing an apparent light source size. <P>SOLUTION: The light-emitting device 1 comprises: red LED chips 21, 24, green LED chips 22, 25, and blue LED chips 23, 26; a substrate 3 where the LED chips 21-26 are packaged while the face directions of respective luminous surfaces 21a-26a are being aligned; sealing sections 40, 41 that are formed by a resin material having light transmission properties in which a light diffusion material is mixed and seal two sets of each three LED chips 21-23 and LED chips 24-26; and a lens section 5 that is formed by a light-transmitting resin material and seal the LED chips 21-26 together with the sealing sections 40, 41. The sealing section 40 has an emission surface 40a in parallel with each of luminous surfaces 21a-23a of respective LED chips 21-23, and the sealing section 41 has an emission surface 41a in parallel with each of luminous surfaces 24a-26a in respective LED chips 24-26. <P>COPYRIGHT: (C)2007,JPO&amp;INPIT

Description

本発明は、光源としてＬＥＤチップを備える発光装置に関するものである。   The present invention relates to a light emitting device including an LED chip as a light source.

従来から、ＬＥＤチップを光源として用いる発光装置が提供されており、特に、発光色が異なるＬＥＤチップを用いることで、各ＬＥＤチップの発光色とは異なる色合いの光を出す発光装置の研究開発が各所で行われている。   Conventionally, a light emitting device using an LED chip as a light source has been provided. In particular, research and development of a light emitting device that emits light of a color different from the emission color of each LED chip by using LED chips having different emission colors. It is done everywhere.

近年では、窒化ガリウム（ＧａＮ）系化合物半導体によって、青色光を放射するＬＥＤチップ（以下、「青色ＬＥＤチップ」と称する）の開発が進んでおり、青色ＬＥＤチップと、赤色光を放射するＬＥＤチップ（以下、「赤色ＬＥＤチップ」と称する）と、緑色光を放射するＬＥＤチップ（以下、「緑色ＬＥＤチップ」と称する）とを組み合わせて白色の光（白色光の発光スペクトル）を得る発光装置（一般に白色ＬＥＤといわれる）の商品化がなされている。   In recent years, LED chips that emit blue light (hereinafter referred to as “blue LED chips”) have been developed using gallium nitride (GaN) -based compound semiconductors, and blue LED chips and LED chips that emit red light have been developed. (Hereinafter referred to as “red LED chip”) and an LED chip that emits green light (hereinafter referred to as “green LED chip”) to obtain white light (white light emission spectrum) The product is generally commercialized as a white LED).

この種の発光装置（白色ＬＥＤ）としては、例えば、赤色ＬＥＤチップと、緑色ＬＥＤチップと、青色ＬＥＤチップと、これらＬＥＤチップが実装される基板と、透光性を有する樹脂材料を用いて形成され、基板上に実装されたＬＥＤチップを封止するレンズとを備えたものが従来から提供されている。
ところで、上記のような発光装置では、至近距離においても、発光装置の出力する光が白色光に見えるようにしたい（つまりは至近距離における混色性を向上したい）という要望がある。そこで、混色性を向上するために、上記レンズを形成する透光性を有する樹脂材料に、光拡散効果を有するフィラー等を配合した発光装置が提案されている（例えば、特許文献１）。
特開２００３−１５００７４号公報（段落番号〔００１０〕及び図１（ａ），（ｂ）参照） As this type of light emitting device (white LED), for example, a red LED chip, a green LED chip, a blue LED chip, a substrate on which these LED chips are mounted, and a resin material having translucency are formed. Conventionally, a lens provided with a lens for sealing an LED chip mounted on a substrate has been provided.
By the way, in the light emitting device as described above, there is a demand for the light output from the light emitting device to appear as white light even at a close distance (that is, to improve the color mixing property at the close distance). Thus, in order to improve color mixing, a light emitting device in which a filler having a light diffusion effect is blended with a light-transmitting resin material forming the lens has been proposed (for example, Patent Document 1).
JP 2003-150074 (see paragraph number [0010] and FIGS. 1A and 1B)

上記のようにレンズ内にフィラー等を拡散させた発光装置では、レンズ内のフィラーによって各ＬＥＤチップから放射された光が拡散されることによって、各ＬＥＤチップの光が混ぜ合わされ、これにより発光装置の混色性を向上できていた。   In the light emitting device in which the filler or the like is diffused in the lens as described above, the light emitted from each LED chip is diffused by the filler in the lens, so that the light of each LED chip is mixed, thereby the light emitting device. It was possible to improve color mixing.

しかしながら、上記の発光装置では、ＬＥＤチップから放射された光を拡散させて混ぜ合わせることができるものの、ＬＥＤチップから放射された光は、フィラーによって拡散されて様々な方向へ広がっていくことになる。特にレンズの出射面近傍に存在するフィラーにより拡散された光は、レンズから発光装置の側方に向かって放射されてしまうことが多く、これにより、発光装置の見かけ上の光源サイズが大きくなってしまっていた。   However, in the above light emitting device, although the light emitted from the LED chip can be diffused and mixed, the light emitted from the LED chip is diffused by the filler and spreads in various directions. . In particular, the light diffused by the filler in the vicinity of the exit surface of the lens is often emitted from the lens toward the side of the light-emitting device, which increases the apparent light source size of the light-emitting device. I was sorry.

このように発光装置の見かけ上の光源サイズが大きくなると、発光装置を照明器具等に用いる際に、配光制御が難しくなるという新たな問題が生じてしまうため、発光装置では、極力、見かけ上の光源サイズが大きくならないようにすることが望まれている。   If the apparent light source size of the light emitting device is increased in this way, a new problem that light distribution control becomes difficult occurs when the light emitting device is used in a lighting fixture or the like. It is desired to prevent the light source size from becoming large.

本発明は上述の点に鑑みて為されたもので、その目的は、ＬＥＤチップの光の混色性を向上できるとともに、見かけ上の光源サイズを小さくできる発光装置を提供することにある。   The present invention has been made in view of the above points, and an object of the present invention is to provide a light emitting device capable of improving the light color mixing property of an LED chip and reducing the apparent light source size.

上記の課題を解決するために、請求項１の発光装置の発明では、発光面の面方向を揃えた状態で基板に実装され放射する光の波長がそれぞれ異なる複数のＬＥＤチップと、光拡散材を混入させた透光性を有する樹脂材料を用いて形成され前記ＬＥＤチップを封止する封止部と、透光性を有する樹脂材料を用いて形成され前記封止部ごと複数の前記ＬＥＤチップを覆うレンズ部とを備え、前記封止部は、前記ＬＥＤチップの前記発光面と平行する出射面を有しており、複数の前記ＬＥＤチップのうち外側の前記ＬＥＤチップの光が内側の前記ＬＥＤチップの光よりも拡散され易くなるように、外側の前記ＬＥＤチップの前記発光面を覆う前記封止部の厚みが、内側の前記ＬＥＤチップの前記発光面を覆う前記封止部の厚みよりも厚く形成されていることを特徴とする。 In order to solve the above problems, in the invention of the light emitting device according to claim 1, a plurality of LED chips each mounted on a substrate and having different wavelengths of emitted light in a state where the surface directions of the light emitting surfaces are aligned, and a light diffusing material and a sealing portion for sealing the L ED chip formed by using a resin material having a light transmitting property that is mixed, the sealing portion for a plurality of formed using a resin material having translucency and a lens portion covering the L ED chip, the sealing portion, said L ED tip the calling light plane with has an emission surface parallel, the outer one of the plurality of the LED chips L ED as the chip of the light is easily diffused than the light of the inside of the LED chip, the thickness of the sealing portion it covering the onset light surface of the outside of the LED chip, the calling of the inside of the L ED chip thicker than the thickness of the sealing portion it covering the light plane And wherein the are.

請求項２の発光装置の発明では、請求項１の構成に加えて、前記レンズ部の出射面には、前記ＬＥＤチップの放射する光の反射を低減する間隔の凹凸を有する反射低減部が形成されていることを特徴とする。 In the invention of the light-emitting device according to claim 2, in addition to the first aspect, the exit surface of the lenses portion, said L ED chip reflection reducing portion having an uneven spacing to reduce reflection of the radiation light of the Is formed.

請求項３の発光装置の発明では、請求項１又は２の構成に加えて、前記封止部は、前記光拡散材が混入されていない透光性を有する樹脂材料からなり、前記ＬＥＤチップを封止する封止層と、前記光拡散材が混入された透光性を有する樹脂材料からなり、前記封止層を覆う光拡散層とで構成されていることを特徴とする。 In the invention of the light-emitting device according to claim 3, in addition to the configuration of claim 1 or 2, wherein the sealing unit is composed of a resin material having a light-transmitting said light diffusion material is not mixed, the L ED chip And a light diffusing layer that covers the sealing layer and is made of a light-transmitting resin material mixed with the light diffusing material.

請求項４の発光装置の発明では、請求項１〜３のいずれか１項の構成に加えて、前記光拡散材は、前記ＬＥＤチップから放射された所定波長の光を、前記所定波長とは異なる波長の光に変換する蛍光体であることを特徴とする。 In the invention of the light-emitting device according to claim 4, in addition to the configuration of claim 1, wherein the light diffusing material, light of a predetermined wavelength emitted from the L ED chip, and the predetermined wavelength Is a phosphor that converts light into different wavelengths.

請求項１の発光装置の発明は、各ＬＥＤチップの光が、光拡散材が混入された封止部により混ぜ合わされた後にレンズ部から出射されるので、ＬＥＤチップの光の混色性が向上するという効果を奏し、また、ＬＥＤチップの光を拡散するための光拡散材を、レンズ部に設けずに、封止部のみに設けているため、レンズ部の出射面近傍で光が拡散されて光が広がってしまうことがなくなり、これにより見かけ上の光源サイズを小さくでき、しかも封止部の出射面がＬＥＤチップの発光面と平行していることにより、ＬＥＤチップの光が封止部から側方へ放射され難くなり、これによりさらに見かけ上の光源サイズが小さくなって、照明器具等に用いる際に配光制御が容易になるという効果を奏する。また、請求項１の発光装置の発明は、混色され易い内側のＬＥＤチップよりも混色され難い外側のＬＥＤチップを覆う封止部の部位の厚みを厚くしているので、内側のＬＥＤチップでは、光をあまり拡散せずに効率よく取り出すことができるという効果を奏し、外側のＬＥＤチップでは、光の混色性を向上できるという効果を奏する。 In the invention of the light-emitting device according to the first aspect, since the light of each LED chip is emitted from the lens part after being mixed by the sealing part mixed with the light diffusing material, the color mixing property of the light of the LED chip is improved. In addition, since the light diffusing material for diffusing the light of the LED chip is not provided in the lens part but only in the sealing part, the light is diffused in the vicinity of the exit surface of the lens part. The light does not spread, thereby making it possible to reduce the apparent light source size, and since the emission surface of the sealing portion is parallel to the light emitting surface of the LED chip, the light of the LED chip is emitted from the sealing portion. It becomes difficult to radiate to the side, and this further reduces the apparent light source size, and has the effect of facilitating light distribution control when used in a lighting fixture or the like . Further, since the invention of the light emitting device of claim 1 is thicker than the inner LED chip which is easily mixed with the color, the thickness of the sealing portion covering the outer LED chip which is difficult to be mixed with the inner LED chip, The effect is that the light can be extracted efficiently without diffusing too much, and the outer LED chip has the effect that the color mixing property of the light can be improved.

請求項２の発光装置の発明は、レンズ部の出射面に凹凸の反射低減部を設けるだけの簡単な構成で、レンズ部の出射面におけるＬＥＤチップの光の反射を低減できるから、レンズ部内で吸収されるＬＥＤチップの光の量を減らすことができ、ＬＥＤチップの光の取り出し効率を向上できるという効果を奏する。   The invention of the light emitting device according to claim 2 can reduce the reflection of the light of the LED chip on the exit surface of the lens unit with a simple configuration by simply providing an uneven reflection reducing unit on the exit surface of the lens unit. The amount of light absorbed by the LED chip can be reduced, and the light extraction efficiency of the LED chip can be improved.

請求項３の発光装置の発明は、封止部の光拡散材によってＬＥＤチップが損傷してしまうことを防止でき、動作の信頼性を向上できるという効果を奏する。   The invention of the light emitting device according to claim 3 can prevent the LED chip from being damaged by the light diffusing material of the sealing portion, and has an effect of improving the operation reliability.

請求項４の発光装置の発明は、ＬＥＤチップの光に加えて、ＬＥＤチップの光の波長幅よりもブロードな波長幅を有する蛍光体の光が出射されるから、演色性を向上できるという効果を奏する。 In the invention of the light emitting device according to claim 4, in addition to the light of the LED chip, the phosphor light having a broader wavelength width than the wavelength width of the light of the LED chip is emitted. Play.

以下に、本発明の実施形態について図１〜図８を用いて説明する。   Embodiments of the present invention will be described below with reference to FIGS.

（実施形態１）
本実施形態の発光装置１は、放射する光の波長がそれぞれ異なる複数（本実施形態では、赤色、緑色、青色の３つ）のＬＥＤチップを用いた白色ＬＥＤであって、図１に示すように、２個の赤色ＬＥＤチップ２１，２４、及び２個の緑色ＬＥＤチップ２２，２５、並びに２個の青色ＬＥＤチップ２３，２６と、これら計６個の３個１組のＬＥＤチップ２１〜２３，２４〜２６が各々の発光面２１ａ〜２３ａ，２４ａ〜２６ａの面方向を揃えた状態で実装される基板３と、光拡散材（図示せず）を混入させた透光性を有する樹脂材料を用いて形成され、３個１組のＬＥＤチップ２１〜２３，２４〜２６をそれぞれ封止する封止部４０，４１と、透光性を有する樹脂材料を用いて形成され、封止部４０，４１ごとＬＥＤチップ２１〜２６を封止するレンズ部５とを備えている。 (Embodiment 1)
The light-emitting device 1 of the present embodiment is a white LED using a plurality of LED chips (three in this embodiment, red, green, and blue) having different wavelengths of emitted light, as shown in FIG. In addition, two red LED chips 21, 24, two green LED chips 22, 25, two blue LED chips 23, 26, and a total of six LED chips 21-23 in total , 24 to 26 are mounted with the light emitting surfaces 21a to 23a and 24a to 26a aligned in the plane direction, and a light-transmitting resin material mixed with a light diffusing material (not shown). Formed by using sealing parts 40 and 41 for sealing a set of three LED chips 21 to 23 and 24 to 26, and a resin material having translucency, and sealing part 40 , 41 and LED chips 21 to 26 are sealed. And a lens portion 5.

そして、封止部４０は、赤色ＬＥＤチップ２１の発光面２１ａと、緑色ＬＥＤチップ２２の発光面２２ａと、青色ＬＥＤチップ２３の発光面２３ａとにそれぞれ平行する出射面４０ａを有し、封止部４１は、赤色ＬＥＤチップ２４の発光面２４ａと、緑色ＬＥＤチップ２５の発光面２５ａと、青色ＬＥＤチップ２６の発光面２６ａとにそれぞれ平行する出射面４１ａを有している。   And the sealing part 40 has the emission surface 40a parallel to the light emission surface 21a of the red LED chip 21, the light emission surface 22a of the green LED chip 22, and the light emission surface 23a of the blue LED chip 23, respectively, and is sealed. The part 41 has a light emitting surface 41a parallel to the light emitting surface 24a of the red LED chip 24, the light emitting surface 25a of the green LED chip 25, and the light emitting surface 26a of the blue LED chip 26, respectively.

まず、基板３に実装される各種ＬＥＤチップ２１〜２６について説明する。   First, various LED chips 21 to 26 mounted on the substrate 3 will be described.

赤色ＬＥＤチップ２１，２４は、それぞれ厚み方向の一表面（図１における上面）が発光面２１ａ，２４ａとして用いられる面発光型のＬＥＤチップであって、光の波長が６２０ｎｍ付近の赤色光（図８（ｂ）参照）を発光面２１ａ，２４ａより放射するように構成されている。   The red LED chips 21 and 24 are surface-emitting LED chips in which one surface in the thickness direction (the upper surface in FIG. 1) is used as the light emitting surfaces 21a and 24a, respectively, and red light having a light wavelength of about 620 nm (see FIG. 8 (b)) is emitted from the light emitting surfaces 21a and 24a.

このような赤色ＬＥＤチップ２１，２４は、アルミニウムガリウムヒ素 (ＡｌＧａＡｓ)系や、アルミニウムインジウムガリウムリン（ＡｌＩｎＧａＰ）系、ガリウムヒ素リン (ＧａＡｓＰ)系等を用いて形成されており、例えば、成長基板（図示せず）上に、ｎ型半導体層、発光層（活性層）、ｐ型半導体層等を順次エピタキシャル成長すること等により得られる。尚、このような赤色ＬＥＤチップ２１，２４の製造方法については、従来から周知の技術であるから、本実施形態では説明を省略する。この点は、後述する緑色ＬＥＤチップ２２，２５及び青色ＬＥＤチップ２３，２６においても同様である。   Such red LED chips 21 and 24 are formed using an aluminum gallium arsenide (AlGaAs) system, an aluminum indium gallium phosphide (AlInGaP) system, a gallium arsenide phosphorus (GaAsP) system, and the like. It is obtained by epitaxially growing an n-type semiconductor layer, a light emitting layer (active layer), a p-type semiconductor layer, and the like sequentially on the not-shown). In addition, about the manufacturing method of such red LED chips 21 and 24, since it is a conventionally well-known technique, description is abbreviate | omitted in this embodiment. This also applies to green LED chips 22 and 25 and blue LED chips 23 and 26 described later.

一方、緑色ＬＥＤチップ２２，２５は、赤色ＬＥＤチップ２１，２４と同様に、それぞれ厚み方向の一表面（図１における上面）が発光面２２ａ，２５ａとして用いられる面発光型のＬＥＤチップであるが、赤色ＬＥＤチップ２１，２４とは異なり、インジウム窒化ガリウム（ＩｎＧａＮ）系や、酸化亜鉛（ＺｎＯ）系、窒化ガリウム (ＧａＮ)系、リン化ガリウム (ＧａＰ)系、アルミニウムインジウムガリウムリン (ＡｌＩｎＧａＰ)系等を用いて、光の波長が５２０ｎｍ付近の緑色光（図８（ｂ）参照）を発光面２２ａ，２５ａより放射するように構成されている。   On the other hand, the green LED chips 22 and 25 are surface-emitting LED chips in which one surface in the thickness direction (the upper surface in FIG. 1) is used as the light-emitting surfaces 22a and 25a, respectively, like the red LED chips 21 and 24. Unlike red LED chips 21 and 24, indium gallium nitride (InGaN), zinc oxide (ZnO), gallium nitride (GaN), gallium phosphide (GaP), aluminum indium gallium phosphide (AlInGaP) For example, green light having a light wavelength of about 520 nm (see FIG. 8B) is emitted from the light emitting surfaces 22a and 25a.

また、青色ＬＥＤチップ２３，２６は、赤色ＬＥＤチップ２１，２４と同様に、厚み方向の一表面（図１における上面）が発光面２３ａ，２６ａとして用いられる面発光型のＬＥＤチップであるが、赤色ＬＥＤチップ２１，２４とは異なり、窒化ガリウム (ＧａＮ)系や、セレン化亜鉛 (ＺｎＳｅ)系、インジウム窒化ガリウム (ＩｎＧａＮ) 系、酸化亜鉛（ＺｎＯ）系等を用いて、光の波長が４５０ｎｍ付近の青色光（図８（ｂ）参照）を発光面２３ａ，２６ａより放射するように構成されている。   The blue LED chips 23 and 26 are surface-emitting LED chips in which one surface in the thickness direction (the upper surface in FIG. 1) is used as the light-emitting surfaces 23a and 26a, similar to the red LED chips 21 and 24. Unlike red LED chips 21 and 24, the wavelength of light is 450 nm using gallium nitride (GaN), zinc selenide (ZnSe), indium gallium nitride (InGaN), zinc oxide (ZnO), and the like. Near blue light (see FIG. 8B) is emitted from the light emitting surfaces 23a and 26a.

基板３は、例えば金属基板等であって、その一表面（図１における上面）には絶縁層を介して、ＬＥＤチップ２１〜２６に駆動電圧を印加するための電極や、該電極に外部の電源を接続するための電極パッド等を含む導電パターン（図示せず）が形成されている。そして、基板３の一表面には、各１個の赤色ＬＥＤチップと、緑色ＬＥＤチップと、青色ＬＥＤチップとを３個１組として、各々の発光面２１ａ〜２６ａの面方向を揃えた状態で所定方向に実装されている。本実施形態では、基板３に上記の組を２組設けた例を示しており、基板３には、図１における左方から右方にかけて、赤色ＬＥＤチップ２１、緑色ＬＥＤチップ２２、青色ＬＥＤチップ２３、赤色ＬＥＤチップ２４、緑色ＬＥＤチップ２５、青色ＬＥＤチップ２６の順に実装されている。   The substrate 3 is, for example, a metal substrate or the like, and an electrode for applying a driving voltage to the LED chips 21 to 26 via an insulating layer on one surface (upper surface in FIG. 1) or an external to the electrode. A conductive pattern (not shown) including electrode pads for connecting a power source is formed. And on the one surface of the board | substrate 3, the surface direction of each light emission surface 21a-26a is made into a set by making each one red LED chip, green LED chip, and blue LED chip into one set. It is mounted in a predetermined direction. In the present embodiment, an example in which two sets of the above-described sets are provided on the substrate 3 is shown, and the red LED chip 21, the green LED chip 22, and the blue LED chip are arranged on the substrate 3 from the left to the right in FIG. 23, a red LED chip 24, a green LED chip 25, and a blue LED chip 26 are mounted in this order.

封止部４０は、３個１組のＬＥＤチップ２１〜２３のそれぞれが放射する光を拡散、混色させるためのものであり、ＬＥＤチップ２１〜２３が実装された基板３が収納された成形金型（図示せず）内に、透光性を有する樹脂材料（例えば透明なシリコーン樹脂やエポキシ樹脂等）に、光拡散材を混入させてなる樹脂材料を、３個１組のＬＥＤチップ２１〜２３を覆うようにして注入し、硬化させてなる平板状の樹脂成形品である。   The sealing portion 40 is for diffusing and mixing the light emitted by each of a set of three LED chips 21 to 23, and a molding metal in which the substrate 3 on which the LED chips 21 to 23 are mounted is accommodated. In a mold (not shown), a resin material obtained by mixing a light diffusing material into a translucent resin material (for example, transparent silicone resin or epoxy resin) is used as a set of three LED chips 21 to 21. 23 is a flat resin molded product that is poured and cured so as to cover 23.

また封止部４０は、各ＬＥＤチップ２１〜２３の発光面２１ａ〜２３ａを覆う部位の厚みが一定となるように形成されており、これにより発光面２１ａ〜２３ａと平行する出射面４０ａをその一表面（図１における上面）に有している。言い換えれば、封止部４０において各ＬＥＤチップ２１〜２３の発光面２１ａ〜２３ａと、ＬＥＤチップ２１〜２３の厚み方向で重複する出射面４０ａは、発光面２１ａ〜２３ａとそれぞれ平行するように形成されているのである。尚、本発明において平行とは、厳密に平行であることを要求するものではなく、おおよそ平行とみなせる程度であればよい。   Moreover, the sealing part 40 is formed so that the thickness of the site | part which covers the light emission surfaces 21a-23a of each LED chip 21-23 becomes fixed, and this makes the output surface 40a parallel to the light emission surfaces 21a-23a the It is on one surface (upper surface in FIG. 1). In other words, in the sealing part 40, the light emitting surfaces 21a to 23a of the LED chips 21 to 23 and the emission surface 40a overlapping in the thickness direction of the LED chips 21 to 23 are formed to be parallel to the light emitting surfaces 21a to 23a, respectively. It has been done. In the present invention, the term “parallel” does not require strictly parallel, and may be any degree that can be regarded as being approximately parallel.

一方、封止部４１は、３個１組のＬＥＤチップ２４〜２６のそれぞれが放射する光を拡散、混色させるためのものであり、封止部４０と同様の方法にて形成されており、赤色ＬＥＤチップ２４の発光面２４ａと、緑色ＬＥＤチップ２５の発光面２５ａと、青色ＬＥＤチップ２６の発光面２６ａとにそれぞれに平行する出射面４１ａを、その一表面（図１における上面）側に有している。   On the other hand, the sealing portion 41 is for diffusing and mixing the light emitted by each of the three LED chips 24 to 26, and is formed by the same method as the sealing portion 40. A light emitting surface 41a parallel to the light emitting surface 24a of the red LED chip 24, the light emitting surface 25a of the green LED chip 25, and the light emitting surface 26a of the blue LED chip 26 is disposed on the one surface (upper surface in FIG. 1) side. Have.

ところで、これら封止部４０，４１に用いられる光拡散材（光散乱材）としては、上記の透光性を有する樹脂とは異なる屈折率を有するガラス片（例えば、石英ガラス）や、金属粒子（例えば、ＡｕやＡｇ等）等を用いている。光拡散材の大きさは、約５００ｎｍ以上であれば、光拡散材による光の散乱効果が得られ、ＬＥＤチップの一辺の長さが約３００μｍ程度である際には、光拡散材を約３０μｍ程度まで大きくすることができる。   By the way, as a light diffusing material (light scattering material) used for these sealing portions 40 and 41, a glass piece (for example, quartz glass) having a refractive index different from the above light-transmitting resin, metal particles, and the like. (For example, Au, Ag, etc.) are used. If the size of the light diffusing material is about 500 nm or more, the light scattering effect by the light diffusing material can be obtained. When the length of one side of the LED chip is about 300 μm, the light diffusing material is about 30 μm. Can be as large as possible.

レンズ部５は、封止部４０，４１が形成された基板３が収納された成形金型（図示せず）内に、透光性を有する樹脂材料（例えば、透明なシリコーン樹脂やエポキシ樹脂等）を、両封止部４０，４１を覆うようにして注入し、硬化させてなる樹脂成形品であって、略半球状の凸面レンズ状に形成されている。そして、このレンズ部５は、封止部４０，４１ごとＬＥＤチップ２１〜２６を封止するとともに、各ＬＥＤチップ２１〜２６の光を集光するレンズとして用いられる。   The lens unit 5 has a translucent resin material (for example, transparent silicone resin or epoxy resin) in a molding die (not shown) in which the substrate 3 on which the sealing units 40 and 41 are formed is accommodated. ) Is injected and cured so as to cover both sealing portions 40 and 41, and is formed in a substantially hemispherical convex lens shape. The lens unit 5 is used as a lens that seals the LED chips 21 to 26 together with the sealing units 40 and 41 and collects the light from the LED chips 21 to 26.

以上により本実施形態の発光装置１は構成されており、上記の図示しない電極パッド間に外部の電源を接続して、ＬＥＤチップ２１〜２６が接続された電極（図示せず）間に所定の電圧（駆動電圧）を印加することによって、各ＬＥＤチップ２１〜２６がそれぞれ点灯して、光が放射される。このように各ＬＥＤチップ２１〜２６より放射された光は、封止部４０，４１内を通ってレンズ部５内に進み、レンズ部５内を通過した後に、レンズ部５から外方へ出射される。   The light emitting device 1 of the present embodiment is configured as described above. An external power source is connected between the electrode pads (not shown), and a predetermined voltage is provided between electrodes (not shown) to which the LED chips 21 to 26 are connected. By applying a voltage (drive voltage), each LED chip 21 to 26 is turned on, and light is emitted. The light emitted from the LED chips 21 to 26 in this way travels through the sealing portions 40 and 41 into the lens portion 5, passes through the lens portion 5, and then exits outward from the lens portion 5. Is done.

ここで、封止部４０内をＬＥＤチップ２１〜２３の光が通過する際には、ＬＥＤチップ２１〜２３の光が、封止部４０に混入された光拡散材によって拡散（散乱）されるために、これらＬＥＤチップ２１〜２３の光が混ぜ合わされ、これにより発光装置１の混色性が向上することになる。また、封止部４０の出射面４０ａから光が出射される際には、出射面４０ａが各ＬＥＤチップ２１〜２３の発光面２１ａ〜２３ａと平行しているために、図２（ａ）に示すように、光があまり封止部４０の側方（基板３の沿面方向側）へ広がらずに、発光面２１ａ〜２３ａの面方向（基板３の面方向）へ向かう光が多くなっている。これに対して、図２（ｂ）に示すように、出射面４０ａが発光面２１ａ〜２３ａに対して傾斜している（図２（ｂ）中では約３４度傾斜している）場合は、光が側方へ広がってしまい、発光面２１ａ〜２３ａの面方向へ向かう光が少なくなる。尚、図２（ａ），（ｂ）では、図面の簡略化のため、ＬＥＤチップ２１〜２３、基板３、及び封止部４０のみを図示している。上記の点は、封止部４１においても同様であるから、ＬＥＤチップ２４〜２６の光が封止部４１を通過する際の説明は省略する。   Here, when the light of the LED chips 21 to 23 passes through the sealing portion 40, the light of the LED chips 21 to 23 is diffused (scattered) by the light diffusing material mixed in the sealing portion 40. For this reason, the light of these LED chips 21 to 23 is mixed, and thereby the color mixing property of the light emitting device 1 is improved. In addition, when light is emitted from the emission surface 40a of the sealing portion 40, the emission surface 40a is parallel to the light emitting surfaces 21a to 23a of the LED chips 21 to 23. As shown, the amount of light that goes toward the surface direction of the light emitting surfaces 21a to 23a (the surface direction of the substrate 3) increases without the light spreading too much to the side of the sealing portion 40 (the creeping direction side of the substrate 3). . On the other hand, as shown in FIG. 2B, when the emission surface 40a is inclined with respect to the light emitting surfaces 21a to 23a (inclined about 34 degrees in FIG. 2B), The light spreads to the side, and the light traveling in the surface direction of the light emitting surfaces 21a to 23a is reduced. 2A and 2B, only the LED chips 21 to 23, the substrate 3, and the sealing portion 40 are illustrated for simplification of the drawing. Since the above points are the same in the sealing part 41, the description when the light of the LED chips 24 to 26 passes through the sealing part 41 is omitted.

さらに、ＬＥＤチップ２１〜２６の光を拡散するための光拡散材を、レンズ部５に設けずに、封止部４０，４１のみに設けているため、レンズ部５の出射面近傍で光が拡散されて広がってしまう（言い換えれば、見かけ上の光源サイズが大きくなってしまう）ことがなくなる。   Furthermore, since the light diffusing material for diffusing the light from the LED chips 21 to 26 is not provided in the lens unit 5 but only in the sealing units 40 and 41, the light is emitted near the exit surface of the lens unit 5. It does not spread and spread (in other words, the apparent light source size increases).

したがって、本実施形態の発光装置１によれば、光拡散材が混入された封止部４０，４１を設けたことによりＬＥＤチップ２１〜２６の光の混色性が向上し、色むらの少ない一様な光（本実施形態では白色光）を照射できるという効果を奏し、その上、レンズ部５に光拡散材を混入していないので出射面近傍で光が拡散されて光が広がってしまうことがなくなり、これにより見かけ上の光源サイズを小さくでき、しかも、封止部４０，４１の出射面４０ａ，４１ａがＬＥＤチップの発光面２１ａ〜２３ａ，２４ａ〜２６ａと平行していることにより、さらに見かけ上の光源サイズを小さくでき、その結果、照明器具等に用いる際に配光制御が容易になるという効果を奏する。   Therefore, according to the light emitting device 1 of the present embodiment, the provision of the sealing portions 40 and 41 mixed with the light diffusing material improves the light color mixing property of the LED chips 21 to 26 and reduces the color unevenness. In addition, there is an effect that it is possible to irradiate such light (white light in the present embodiment), and in addition, since no light diffusing material is mixed in the lens unit 5, the light is diffused in the vicinity of the emission surface and spreads. As a result, the apparent light source size can be reduced, and the emission surfaces 40a and 41a of the sealing portions 40 and 41 are parallel to the light emitting surfaces 21a to 23a and 24a to 26a of the LED chip. The apparent light source size can be reduced, and as a result, there is an effect that light distribution control is facilitated when used in a lighting fixture or the like.

尚、本実施形態の発光装置１では、赤色ＬＥＤチップと、緑色ＬＥＤチップと、青色ＬＥＤチップとを３個１組として２組備えているが、このような組は２組に限られるものではなく、３組以上、又は１組のみとしてもよい。また、ＬＥＤチップをマトリクス状に設けるようにしてもよい。つまり、ＬＥＤチップをどのようにして用いるかは、発光装置の使用形態等に応じて適宜変更すればよいのである。この点は後述する実施形態２〜７においても同様である。尚、本実施形態の発光装置１では、ＬＥＤチップとして、赤色、緑色、青色の３色を用いて、白色光を出力する発光装置としているが、ＬＥＤチップの組み合わせとしては、上記の例に限られるものではなく、例えば、青色と黄色等、補色関係にある色のＬＥＤチップを用いて白色光を得るようにしてもよい。また、発光装置の出力する光の色も白色に限られるものではなく、発光色の異なる（放射する光の波長が異なる）ＬＥＤチップを組み合わせることで、所望の光色が得られるように構成してもよい。この点は後述する実施形態２〜５，７においても同様である。 In addition, in the light emitting device 1 of the present embodiment, the red LED chip, the green LED chip, and the blue LED chip are provided as two sets of three, but such a set is not limited to two sets. It is good also as 3 or more sets or only 1 set. Further, the LED chips may be provided in a matrix. That is, how to use the LED chip may be appropriately changed according to the usage pattern of the light emitting device. This point Ru der same in the embodiment 2-7 will be described later. In the light emitting device 1 of the present embodiment, the LED chip is a light emitting device that outputs white light using three colors of red, green, and blue. However, the combination of LED chips is limited to the above example. For example, white light may be obtained by using LED chips of complementary colors such as blue and yellow. Also, the output to the light color of the light emitting device is also not limited to white, light emission color different (the wavelength of the radiation light is different) LED chip by combining the configuration as desired light color can be obtained May be. This also applies to Embodiments 2 to 5 and 7 described later.

（実施形態２）
本実施形態の発光装置１０は、上記実施形態１の封止部４０，４１の代わりに、図３に示す封止部６０，６１を備えていることに特徴があり、その他の構成については上記実施形態１の発光装置１と同様であるから、同様の構成については同一の符号を付して説明を省略する。 (Embodiment 2)
The light emitting device 10 of the present embodiment is characterized in that it includes the sealing portions 60 and 61 shown in FIG. 3 instead of the sealing portions 40 and 41 of the first embodiment. Since it is the same as that of the light-emitting device 1 of Embodiment 1, the same code | symbol is attached | subjected about the same structure and description is abbreviate | omitted.

すなわち、本実施形態の発光装置１０における封止部６０は、図３に示すように、３個１組のＬＥＤチップ２１〜２３を封止する封止層６０Ａと、封止層６０Ａを覆う拡散層６０Ｂとを有する２層構造となっている。また、封止部６１は、封止部６０と同様に、３個１組のＬＥＤチップ２４〜２６を封止する封止層６１Ａと、封止層６１Ａを覆う拡散層６１Ｂとを有する２層構造となっている。   That is, the sealing part 60 in the light emitting device 10 of the present embodiment includes a sealing layer 60A that seals a set of three LED chips 21 to 23 and a diffusion that covers the sealing layer 60A, as shown in FIG. It has a two-layer structure having the layer 60B. Moreover, the sealing part 61 is 2 layers which have the sealing layer 61A which seals 3 sets of LED chips 24-26 similarly to the sealing part 60, and the diffusion layer 61B which covers 61 A of sealing layers. It has a structure.

封止層６０Ａは、３個１組のＬＥＤチップ２１〜２３をそれぞれ封止するためのものであり、ＬＥＤチップ２１〜２３が実装された基板３が収納された成形金型（図示せず）内に、透光性を有する樹脂材料（例えば透明なシリコーン樹脂やエポキシ樹脂等）を、３個１組のＬＥＤチップ２１〜２３を覆うようにして注入し、硬化させてなる樹脂成形品である。このような封止層６０Ａは、平板状に形成されており、赤色ＬＥＤチップ２１の発光面２１ａと、緑色ＬＥＤチップ２２の発光面２２ａと、青色ＬＥＤチップ２３の発光面２３ａとにそれぞれ平行する出射面６０ａを、その一表面（図３における上面）側に有している。   The sealing layer 60A is for sealing a set of three LED chips 21 to 23, and a molding die (not shown) in which the substrate 3 on which the LED chips 21 to 23 are mounted is accommodated. It is a resin molded product in which a resin material having translucency (for example, transparent silicone resin or epoxy resin) is injected and cured so as to cover a set of three LED chips 21 to 23. . Such a sealing layer 60A is formed in a flat plate shape, and is parallel to the light emitting surface 21a of the red LED chip 21, the light emitting surface 22a of the green LED chip 22, and the light emitting surface 23a of the blue LED chip 23, respectively. The emission surface 60a is provided on the one surface (upper surface in FIG. 3) side.

一方、拡散層６０Ｂは、３個１組のＬＥＤチップ２１〜２３のそれぞれが放射する光を拡散、混色させるためのものであり、上記の封止層６０Ａが形成された基板３が収納された成形金型（図示せず）内に、透光性を有する樹脂材料（例えば透明なシリコーン樹脂やエポキシ樹脂等）に、光拡散材を混入させてなる樹脂材料を、封止層６０Ａを覆うようにして注入し、硬化させてなる樹脂成形品である。このような拡散層６０Ｂは、封止層６０Ａと同様に、赤色ＬＥＤチップ２１の発光面２１ａと、緑色ＬＥＤチップ２２の発光面２２ａと、青色ＬＥＤチップ２３の発光面２３ａとにそれぞれ平行する出射面６０ｂを、その一表面（図３における上面）側に有している。尚、光拡散材（光散乱材）としては、上記の実施形態１で述べたものと同様のものを用いている。この点は、封止部６１においても同様である。尚、出射面６０ａ，６０ｂは、上記実施形態１の出射面４０ａと同様の方法により形成されている。 On the other hand, the diffusion layer 60B is for diffusing and mixing light emitted from each of the three LED chips 21 to 23, and the substrate 3 on which the sealing layer 60A is formed is accommodated. Cover the sealing layer 60 </ b> A with a resin material obtained by mixing a light diffusing material in a translucent resin material (for example, a transparent silicone resin or epoxy resin) in a molding die (not shown). It is a resin molded product that is injected and cured. Similar to the sealing layer 60A, such a diffusion layer 60B is emitted parallel to the light emitting surface 21a of the red LED chip 21, the light emitting surface 22a of the green LED chip 22, and the light emitting surface 23a of the blue LED chip 23, respectively. The surface 60b is provided on the one surface (upper surface in FIG. 3) side. In addition, as a light-diffusion material (light-scattering material), the thing similar to what was described in said Embodiment 1 is used. This also applies to the sealing portion 61 . The emission surfaces 60a and 60b are formed by the same method as the emission surface 40a of the first embodiment.

以上により封止部６０が得られ、この封止部６０では、封止部６０においてＬＥＤチップ２１〜２３を覆う部位である封止層６０Ａが、光拡散材が混入されていない透光性を有する樹脂材料を用いて形成されているため、ＬＥＤチップ２１〜２３が、光拡散材によって損傷してしまうことがない。   The sealing part 60 is obtained by the above, and in this sealing part 60, the sealing layer 60A, which is a part covering the LED chips 21 to 23 in the sealing part 60, has translucency that is not mixed with a light diffusing material. Since it is formed using the resin material which it has, LED chip 21-23 will not be damaged with a light-diffusion material.

また、封止部６１は、封止部６０と同様の構成を有するものであり、透光性を有する樹脂材料（例えば透明なシリコーン樹脂やエポキシ樹脂等）を用いて形成された樹脂成形品からなり、ＬＥＤチップ２４〜２６を封止する封止層６１Ａと、透光性を有する樹脂材料（例えば透明なシリコーン樹脂やエポキシ樹脂等）に、光拡散材を混入させてなる樹脂材料を用いて形成された樹脂成形品からなり、封止層６１Ａを覆う拡散層６１Ｂとを有している。また封止層６１Ａ及び拡散層６１Ｂは、それぞれ赤色ＬＥＤチップ２４の発光面２４ａと、緑色ＬＥＤチップ２５の発光面２５ａと、青色ＬＥＤチップ２６の発光面２６ａとにそれぞれ平行する出射面６１ａ，６１ｂを、その一表面（図３における上面）側に有している。   Moreover, the sealing part 61 has the same configuration as that of the sealing part 60, and is formed from a resin molded product formed using a translucent resin material (for example, a transparent silicone resin or an epoxy resin). Using a resin material in which a light diffusion material is mixed into a sealing layer 61A for sealing the LED chips 24 to 26 and a light-transmitting resin material (for example, transparent silicone resin or epoxy resin). It consists of the formed resin molded product, and has the diffusion layer 61B which covers 61 A of sealing layers. In addition, the sealing layer 61A and the diffusion layer 61B are respectively provided on the emission surfaces 61a and 61b parallel to the light emitting surface 24a of the red LED chip 24, the light emitting surface 25a of the green LED chip 25, and the light emitting surface 26a of the blue LED chip 26, respectively. On the one surface (upper surface in FIG. 3) side.

そして、このような封止部６０，６１を有する本実施形態の発光装置１０において、ＬＥＤチップ２１〜２６を点灯させた場合、各ＬＥＤチップ２１〜２６より放射された光は、封止層６０Ａ，６１Ａ、拡散層６０Ｂ，６１Ｂの順に両封止部６０，６１内を通過した後にレンズ部５内に進み、レンズ部５内を通過した後に、レンズ部５から外方へ出射される。ここで、封止部６０，６１内をＬＥＤチップ２１〜２６の光が通過する際には、ＬＥＤチップ２１〜２６の光が、各封止部６０，６１の拡散層６０Ｂ，６１Ｂに混入された光拡散材によって拡散（散乱）されるために、これらＬＥＤチップ２１〜２６の光が混ぜ合わされ、これにより発光装置１０の混色性が向上することになる。   And in the light-emitting device 10 of this embodiment which has such sealing parts 60 and 61, when the LED chips 21-26 are lighted, the light radiated | emitted from each LED chips 21-26 is sealing layer 60A. , 61A and diffusion layers 60B, 61B pass through both sealing parts 60, 61 in this order, and then proceed into the lens part 5. After passing through the lens part 5, the light is emitted outward from the lens part 5. Here, when the light from the LED chips 21 to 26 passes through the sealing portions 60 and 61, the light from the LED chips 21 to 26 is mixed into the diffusion layers 60B and 61B of the sealing portions 60 and 61, respectively. Since the light is diffused (scattered) by the light diffusing material, the light from the LED chips 21 to 26 is mixed, thereby improving the color mixing property of the light emitting device 10.

また、封止部６０，６１から光が出射される際には、封止層６０Ａ，６０Ｂの出射面６０ａ，６０ｂ及び拡散層６０Ｂ，６１ＡＢの出射面６１ａ，６１ｂがそれぞれＬＥＤチップ２１〜２３，２４〜２６の発光面２１ａ〜２３ａ，２４ａ〜２６ａと平行しているために、光があまり封止部６０，６１の側方（基板３の沿面方向側）へ広がらずに、発光面２１ａ〜２６ａの面方向（基板３の面方向）へ向かう光が多くなっている。さらに、ＬＥＤチップ２１〜２６の光を拡散するための光拡散材を、レンズ部５に設けずに、封止部６０，６１の拡散層６０Ｂ，６１Ｂのみに設けているため、レンズ部５の出射面近傍で光が拡散されて光が広がってしまう（言い換えれば、見かけ上の光源サイズが大きくなってしまう）ことがなくなる。   Further, when light is emitted from the sealing portions 60 and 61, the emission surfaces 60a and 60b of the sealing layers 60A and 60B and the emission surfaces 61a and 61b of the diffusion layers 60B and 61AB are LED chips 21 to 23, respectively. Since the light emitting surfaces 21a to 23a and 24a to 26a are parallel to the light emitting surfaces 21 to 26, the light does not spread so much to the side of the sealing portions 60 and 61 (the creeping direction side of the substrate 3). The amount of light traveling toward the surface direction 26a (the surface direction of the substrate 3) increases. Furthermore, since the light diffusing material for diffusing the light from the LED chips 21 to 26 is not provided in the lens unit 5 but only in the diffusion layers 60B and 61B of the sealing units 60 and 61, Light is not diffused in the vicinity of the exit surface and the light spreads (in other words, the apparent light source size increases).

以上述べた本実施形態の発光装置１０によれば、上記実施形態１と同様の効果を奏する上に、封止部６０，６１においてＬＥＤチップ２１〜２３，２４〜２６を封止する部位である封止層６０Ａ，６１Ａに、光拡散材が混入されていないので、光拡散材によってＬＥＤチップ２１〜２６が損傷してしまうことを防止でき、動作の信頼性を向上できるという効果を奏する。尚、本実施形態の構成を後述する実施形態３〜７に用いるようにしもてよい。   According to the light emitting device 10 of the present embodiment described above, the same effects as those of the first embodiment are obtained, and the LED chips 21 to 23 and 24 to 26 are sealed in the sealing portions 60 and 61. Since the light diffusing material is not mixed in the sealing layers 60A and 61A, the LED chips 21 to 26 can be prevented from being damaged by the light diffusing material, and the operation reliability can be improved. In addition, you may make it use the structure of this embodiment for Embodiment 3-7 mentioned later.

（実施形態３）
本実施形態の発光装置１１は、上記実施形態１の封止部４０，４１の代わりに、図４に示す封止部７１〜７６を備えていることに特徴があり、その他の構成については上記実施形態１の発光装置１と同様であるから、同様の構成については同一の符号を付して説明を省略する。 (Embodiment 3)
The light emitting device 11 of the present embodiment is characterized in that it includes the sealing portions 71 to 76 shown in FIG. 4 instead of the sealing portions 40 and 41 of the first embodiment. Since it is the same as that of the light-emitting device 1 of Embodiment 1, the same code | symbol is attached | subjected about the same structure and description is abbreviate | omitted.

すなわち本実施形態の発光装置１１は、図４に示すように、赤色ＬＥＤチップ２１を封止する第１の封止部７１と、緑色ＬＥＤチップ２２を封止する第２の封止部７２と、青色ＬＥＤチップ２３を封止する第３の封止部７３と、赤色ＬＥＤチップ２４を封止する第４の封止部７４と、緑色ＬＥＤチップ２５を封止する第５の封止部７５と、青色ＬＥＤチップ２６を封止する第６の封止部７６とを備えている。   That is, as shown in FIG. 4, the light emitting device 11 of the present embodiment includes a first sealing portion 71 that seals the red LED chip 21, and a second sealing portion 72 that seals the green LED chip 22. The 3rd sealing part 73 which seals blue LED chip 23, the 4th sealing part 74 which seals red LED chip 24, and the 5th sealing part 75 which seals green LED chip 25 And a sixth sealing portion 76 that seals the blue LED chip 26.

ここで、第１の封止部７１は、主に赤色ＬＥＤチップ２１が放射する光を拡散、混色させるためのものであり、ＬＥＤチップ２１〜２６が実装された基板３が収納された成形金型（図示せず）内に、透光性を有する樹脂材料（例えば透明なシリコーン樹脂やエポキシ樹脂等）に、光拡散材を混入させてなる樹脂材料を、赤色ＬＥＤチップ２１を覆うようにして注入し、硬化させてなる平板状の樹脂成形品である。   Here, the 1st sealing part 71 is mainly for diffusing and mixing the light which the red LED chip 21 radiates | emits, and the molding metal with which the board | substrate 3 with which LED chips 21-26 were mounted was accommodated. Cover the red LED chip 21 with a resin material in which a light diffusing material is mixed into a translucent resin material (for example, transparent silicone resin or epoxy resin) in a mold (not shown). It is a flat resin molded product that is injected and cured.

また、第１の封止部７１は、赤色ＬＥＤチップ２１の発光面２１ａを覆う部位の厚みが一定となるように形成されており、これにより発光面２１ａと平行する出射面７１ａをその一表面（図４における上面）に有している。言い換えれば、第１の封止部７１において赤色ＬＥＤチップ２１の発光面２１ａと、赤色ＬＥＤチップ２１の厚み方向で重複する出射面７１ａは、発光面２１ａと平行するように形成されているのである。尚、上記の光拡散材（光散乱材）としては、実施形態１と同様のものを用いることができるために、説明を省略する。 Further, the first sealing portion 71 is formed so that the thickness of the portion covering the light emitting surface 21a of the red LED chip 21 is constant, whereby the emission surface 71a parallel to the light emitting surface 21a is formed on one surface thereof. has the (definitive top in FIG. 4). In other words, in the first sealing portion 71, the light emitting surface 21a of the red LED chip 21 and the emission surface 71a overlapping in the thickness direction of the red LED chip 21 are formed so as to be parallel to the light emitting surface 21a. . In addition, since the same thing as Embodiment 1 can be used as said light-diffusion material (light-scattering material), description is abbreviate | omitted.

一方、第２〜第６の封止部７２〜７６も、第１の封止部７１と同様の方法にて、それぞれ対応するＬＥＤチップ２２〜２６を個別に封止するとともに、封止したＬＥＤチップ２２〜２６の発光面２２ａ〜２６ａとそれぞれ平行する出射面７２ａ〜７６ａを有するように形成されている。   On the other hand, the second to sixth sealing portions 72 to 76 also individually seal the corresponding LED chips 22 to 26 in the same manner as the first sealing portion 71 and the sealed LEDs. The light emitting surfaces 22a to 26a of the chips 22 to 26 are formed to have emission surfaces 72a to 76a that are parallel to the light emitting surfaces 22a to 26a, respectively.

以上述べた第１〜第６の封止部７１〜７６は、それぞれ光拡散材が混入された透光性を有する樹脂材料を用いて形成されているが、第１及び第６の封止部７１，７６と、第２及び第５の封止部７２，７５と、第３及び第４の封止部７３，７４とで、光拡散材の混入量を異ならせてあり、具体的には、光拡散材の混入量を、第１及び第６の封止部７１，７６、第２及び第５の封止部７２，７５、第３及び第４の封止部７３，７４の順に多くしている。 The first to sixth sealing portions 71 to 76 described above are each formed using a light-transmitting resin material mixed with a light diffusing material, but the first and sixth sealing portions. 71, 76, the second and fifth sealing portions 72, 75, and the third and fourth sealing portions 73, 74 have different amounts of light diffusing material, specifically, the mixing amount of the light diffusing member, first及 beauty sixth sealing portion 71 and 76, second and fifth sealing unit 72 and 75, of the third及 beauty fourth sealing portions 73 and 74 We increase in order.

これにより第１及び第６の封止部７１，７６、第２及び第５の封止部７２，７５、第３及び第４の封止部７３，７４の順に、光の拡散性が向上する（つまりは、光の拡散量が増える）ようにしてあり、その結果、ＬＥＤチップ２１〜２６のうち外側に位置するＬＥＤチップの光ほど拡散され易くなり、ＬＥＤチップ２１〜２６のうち内側に位置するＬＥＤチップの光ほど拡散され難くなる。 Thus, the first及 beauty sixth sealing portion 71 and 76, second and fifth sealing unit 72 and 75, in order of the third及 beauty fourth sealing portions 73 and 74, diffusion of light As a result, the light of the LED chip located on the outer side of the LED chips 21 to 26 is more easily diffused, and the inner side of the LED chips 21 to 26 is improved. The light of the LED chip located at the position becomes difficult to diffuse.

つまり、本実施形態の発光装置１１では、内側に位置するＬＥＤチップ２３，２４の光のように他のＬＥＤチップの光と混色され易い光はあまり拡散せずに、外側に位置するＬＥＤチップ２１，２６の光のように他のＬＥＤチップの光と混色され難い光をよく拡散するようにしているのである。 That is, the light emitting device 11 of the present embodiment, without significant diffusion prone light is light and mixing of other LED chips as the light of the LED chips 23 and 24 located inside, LED chips located outside Thus, light that is difficult to be mixed with light from other LED chips, such as the light from the lamps 21 and 26, is diffused well.

以上により本実施形態の発光装置１１は構成されており、ＬＥＤチップ２１〜２６を点灯させた場合、各ＬＥＤチップ２１〜２６より放射された光は、それぞれ第１〜第６の封止部７１〜７６内を通ってレンズ部５内に進み、レンズ部５内を通過した後に、レンズ部５から外方へ出射される。ここで、第１〜第６の封止部７１〜７６内を各ＬＥＤチップの光が通過する際には、ＬＥＤチップの光が、光拡散材によって拡散（散乱）されるために、これらＬＥＤチップ２１〜２６の光が混ぜ合わされ、これにより発光装置１の混色性が向上することになる。   The light emitting device 11 of the present embodiment is configured as described above. When the LED chips 21 to 26 are turned on, the light emitted from the LED chips 21 to 26 is the first to sixth sealing portions 71, respectively. The light travels through the lens unit 5 through the lens unit 76, passes through the lens unit 5, and then is emitted outward from the lens unit 5. Here, when the light of each LED chip passes through the first to sixth sealing portions 71 to 76, the light of the LED chip is diffused (scattered) by the light diffusing material. The light of the chips 21 to 26 is mixed, and thereby the color mixing property of the light emitting device 1 is improved.

また、第１〜第６の封止部７１〜７６の各出射面７１ａ〜７６ａから光が出射される際には、各出射面７１ａ〜７６ａがそれぞれ対応するＬＥＤチップの発光面２１ａ〜２６ａと平行しているために、光があまり各封止部７１〜７６の側方（基板３の沿面方向側）へ広がらずに、各ＬＥＤチップ２１〜２６の発光面２１ａ〜２６ａの面方向（基板３の面方向）へ向かう光が多くなっている。さらに、ＬＥＤチップ２１〜２６の光を拡散するための光拡散材を、レンズ部５に混入せずに、封止部７１〜７６のみに混入しているため、レンズ部５の出射面近傍で光が拡散されて光が広がってしまう（言い換えれば、見かけ上の光源サイズが大きくなってしまう）ことがなくなる。   Further, when light is emitted from the emission surfaces 71a to 76a of the first to sixth sealing portions 71 to 76, the emission surfaces 71a to 76a correspond to the light emitting surfaces 21a to 26a of the LED chips respectively corresponding to the emission surfaces 71a to 76a. Since they are parallel, light does not spread so much to the side of each sealing portion 71 to 76 (the creeping direction side of the substrate 3), and the surface direction of the light emitting surfaces 21a to 26a of each LED chip 21 to 26 (substrate) 3) (the direction of the surface 3) is increasing. Furthermore, since the light diffusing material for diffusing the light from the LED chips 21 to 26 is not mixed in the lens unit 5 but only in the sealing units 71 to 76, in the vicinity of the exit surface of the lens unit 5. The light is not diffused and spreads (in other words, the apparent light source size increases).

したがって、本実施形態の発光装置１１によれば、上記実施形態１と同様の効果を奏する上に、内側のＬＥＤチップでは、光をあまり拡散せずに効率よく取り出すことができるという効果を奏し、外側のＬＥＤチップでは、光の混色性を向上できるという効果を奏する。   Therefore, according to the light emitting device 11 of the present embodiment, in addition to the same effects as those of the first embodiment, the inner LED chip has an effect that light can be efficiently extracted without diffusing much, The outer LED chip has an effect that the color mixing property of light can be improved.

尚、本実施形態の発光装置１１は、ＬＥＤチップ２１〜２６を個別に封止する複数の封止部７１〜７６を備えているが、発光装置１１としては、一方の外側の２個のＬＥＤチップ２１，２２を封止する第１の封止部（図示せず）と、内側の２個のＬＥＤチップ２３，２４を封止する第２の封止部（図示せず）と、他方の外側の２個のＬＥＤチップ２５，２６を封止する第３の封止部（図示せず）とを備えるものであってもよく、この場合、第１及び第３の封止部に混入する光拡散材の量を、第２の封止部に混入する光拡散材の量よりも多くすれば、同様の効果を得ることができる。つまり、封止部は、ＬＥＤチップの数や配置等に応じて適宜変更すればよい。   In addition, although the light-emitting device 11 of this embodiment is provided with the some sealing parts 71-76 which seal LED chip 21-26 separately, as the light-emitting device 11, two LED of one outer side is provided. A first sealing portion (not shown) for sealing the chips 21 and 22, a second sealing portion (not shown) for sealing the inner two LED chips 23 and 24, and the other A third sealing portion (not shown) that seals the two outer LED chips 25 and 26 may be provided. In this case, the LED chips 25 and 26 are mixed into the first and third sealing portions. If the amount of the light diffusing material is made larger than the amount of the light diffusing material mixed in the second sealing portion, the same effect can be obtained. That is, the sealing portion may be changed as appropriate according to the number and arrangement of the LED chips.

（実施形態４）
本実施形態の発光装置１２は、レンズ部５の形状に特徴があり、その他の構成は上記実施形態３と同様であるから説明を省略する。尚、実施形態３と同様の構成については、同一の符号を付して説明を省略する。 (Embodiment 4)
The light emitting device 12 of the present embodiment is characterized by the shape of the lens unit 5, and the other configuration is the same as that of the third embodiment, so that the description thereof is omitted. In addition, about the structure similar to Embodiment 3, the same code | symbol is attached | subjected and description is abbreviate | omitted.

すなわち、本実施形態のレンズ部５は、上記実施形態１で述べたように、透光性を有する樹脂材料（例えば、透明なシリコーン樹脂やエポキシ樹脂等）を用いて略半球状の凸面レンズ状に形成されているものの、図５に示すように、その出射面５ａに、ＬＥＤチップの放射する光の反射を低減する間隔の凹凸を有する反射低減部５０が形成されている点で異なっている。   That is, as described in the first embodiment, the lens unit 5 of the present embodiment has a substantially hemispherical convex lens shape using a translucent resin material (for example, a transparent silicone resin or an epoxy resin). However, as shown in FIG. 5, it is different in that a reflection reducing portion 50 having unevenness of intervals for reducing the reflection of light emitted from the LED chip is formed on the emission surface 5 a. .

この反射低減部５０は、図５に示すように、出射面５ａにレンズ部５の径方向において開口幅が徐々に狭くなったＶ溝状の凹部５０ａが複数並設されてなる凹凸を有し、この凹凸の間隔（単位はｎｍ）は、ｄ（本実施形態では、４００ｎｍ）としている。   As shown in FIG. 5, the reflection reducing portion 50 has irregularities formed by arranging a plurality of V-groove-shaped concave portions 50a having an opening width gradually reduced in the radial direction of the lens portion 5 on the emission surface 5a. The interval between the concaves and convexes (unit: nm) is d (400 nm in this embodiment).

以下に、反射低減部５０により光の反射を低減できる原理について簡単に説明する。この反射低減部５０は、入射したＬＥＤチップの光の波長λがｄ以上であるか、ｄ未満であるかによって、反射を低減できる原理が異なっている。すなわち、ｄ＜λである場合には、反射低減部５０が波長λの光に対して、レンズ部５の出射面５ａと外部（空気層）との間の中間の屈折率を有する中間層として作用し、これによりレンズ部５、反射低減部５０、及び外部の各部間の臨界角がそれぞれ大きくなって、出射面５ａでの全反射が低減されるとともに、屈折率の差に起因するフレネル反射が低減されることになる。一方、ｄ≧λである場合には、レンズ部５の出射面５ａで回折光を発生させ、このような回折光を用いることにより臨界角以上の反射される光を取り出すことができるようになり、これにより出射面５ａでの光の反射が低減されることになる。尚、ｄがλよりも非常に大きい場合（例えば５倍以上である場合）、出射面５ａにおいてＬＥＤチップの光が臨界角以上の角度で突入できない面が増えることによって、出射面５ａでの全反射が低減されることになる。   Below, the principle which can reduce reflection of light by the reflection reduction part 50 is demonstrated easily. The principle of the reflection reducing unit 50 that can reduce reflection differs depending on whether the wavelength λ of the light of the incident LED chip is greater than or less than d. That is, when d <λ, the reflection reducing unit 50 is an intermediate layer having an intermediate refractive index between the exit surface 5a of the lens unit 5 and the outside (air layer) for light of wavelength λ. As a result, the critical angle between the lens unit 5, the reflection reducing unit 50, and each external unit is increased, and total reflection on the exit surface 5a is reduced and Fresnel reflection caused by the difference in refractive index. Will be reduced. On the other hand, when d ≧ λ, diffracted light is generated on the exit surface 5a of the lens unit 5, and by using such diffracted light, reflected light having a critical angle or more can be extracted. As a result, reflection of light at the exit surface 5a is reduced. When d is much larger than λ (for example, 5 times or more), the number of surfaces on the exit surface 5a where the light from the LED chip cannot enter at an angle greater than the critical angle increases. Reflection will be reduced.

以上により本実施形態の発光装置１２は構成されており、ＬＥＤチップ２１〜２６を点灯させた場合、各ＬＥＤチップ２１〜２６より放射された光は、それぞれ第１〜第６の封止部７１〜７６内を通ってレンズ部５内に進み、レンズ部５内を通過した後に、出射面５ａに設けられた反射低減部５０を経由してレンズ部５から外方へ出射される。このとき、レンズ部５の出射面５ａに反射低減部５０を設けているために、出射面５ａでの光の反射が低減されることになる。尚、封止部７１〜７６の作用については、上記実施形態３と同様であるから説明を省略する。   The light emitting device 12 of the present embodiment is configured as described above. When the LED chips 21 to 26 are turned on, the light emitted from the LED chips 21 to 26 is the first to sixth sealing portions 71, respectively. The light travels through the lens unit 5 through the lens unit 5, passes through the lens unit 5, and then exits from the lens unit 5 via the reflection reduction unit 50 provided on the exit surface 5 a. At this time, since the reflection reducing unit 50 is provided on the emission surface 5a of the lens unit 5, reflection of light on the emission surface 5a is reduced. In addition, about the effect | action of the sealing parts 71-76, since it is the same as that of the said Embodiment 3, description is abbreviate | omitted.

したがって、本実施形態の発光装置１２によれば、上記実施形態３と同様の効果を奏する上に、レンズ部５の出射面５ａに凹凸の反射低減部５０を設けるだけの簡単な構成で、レンズ部５の出射面５ａにおけるＬＥＤチップの光の反射を低減できるから、レンズ部５内で吸収されるＬＥＤチップの光の量を減らすことができ、結果として、ＬＥＤチップの光の取り出し効率を向上できるという効果を奏する。   Therefore, according to the light emitting device 12 of the present embodiment, in addition to the same effects as those of the third embodiment, the lens can be configured with a simple configuration in which the uneven reflection reducing unit 50 is provided on the exit surface 5a of the lens unit 5. Since the reflection of the LED chip light on the exit surface 5a of the unit 5 can be reduced, the amount of LED chip light absorbed in the lens unit 5 can be reduced, and as a result, the LED chip light extraction efficiency is improved. There is an effect that can be done.

尚、このような反射低減部５０は、上述した実施形態１，２や、後述する実施形態５〜７のレンズ部５に設けるようにしてもよい。   In addition, you may make it provide such a reflection reduction part 50 in the lens part 5 of Embodiment 1, 2 mentioned above or Embodiment 5-7 mentioned later.

（実施形態５）
本実施形態の発光装置１３は、上記実施形態３の封止部７１〜７６の代わりに、図６に示す封止部８１〜８６を備えていることに特徴があり、その他の構成については上記実施形態３の発光装置１１と同様であるから、同様の構成については同一の符号を付して説明を省略する。 (Embodiment 5)
The light emitting device 13 of the present embodiment is characterized in that it includes the sealing portions 81 to 86 shown in FIG. 6 instead of the sealing portions 71 to 76 of the third embodiment, and the other configurations are the above. Since it is the same as the light-emitting device 11 of Embodiment 3, the same code | symbol is attached | subjected about the same structure and description is abbreviate | omitted.

すなわち、本実施形態の発光装置１３は、図６に示すように、赤色ＬＥＤチップ２１を封止する第１の封止部８１と、緑色ＬＥＤチップ２２を封止する第２の封止部８２と、青色ＬＥＤチップ２３を封止する第３の封止部８３と、赤色ＬＥＤチップ２４を封止する第４の封止部８４と、緑色ＬＥＤチップ２５を封止する第５の封止部８５と、青色ＬＥＤチップ２６を封止する第６の封止部８６とを備えている。   That is, in the light emitting device 13 of the present embodiment, as shown in FIG. 6, the first sealing portion 81 that seals the red LED chip 21 and the second sealing portion 82 that seals the green LED chip 22. A third sealing part 83 for sealing the blue LED chip 23, a fourth sealing part 84 for sealing the red LED chip 24, and a fifth sealing part for sealing the green LED chip 25 85 and a sixth sealing portion 86 that seals the blue LED chip 26.

ここで、第１〜第６の封止部８１〜８６は、上記実施形態３の第１の封止部７１と同様の方法にて、それぞれ対応するＬＥＤチップ２１〜２６を個別に封止するとともに、封止したＬＥＤチップ２１〜２６の発光面２１ａ〜２６ａとそれぞれ平行する出射面８１ａ〜８６ａを有するように形成されている。   Here, the first to sixth sealing portions 81 to 86 individually seal the corresponding LED chips 21 to 26 in the same manner as the first sealing portion 71 of the third embodiment. In addition, the light emitting surfaces 21a to 26a of the sealed LED chips 21 to 26 are formed to have emission surfaces 81a to 86a, respectively.

以上述べた第１〜第６の封止部８１〜８６は、それぞれ光拡散材が混入された透光性を有する樹脂材料を用いて形成されているが、第１及び第６の封止部８１，８６と、第２及び第５の封止部８２，８５と、第３及び第４の封止部８３，８４とで、厚みを異ならせてある。すなわち、発光装置１３では、ＬＥＤチップ２１〜２６のうち外側のＬＥＤチップを覆う封止部の厚みが、内側のＬＥＤチップを覆う封止部の厚みよりも厚く形成されており、具体的には、ＬＥＤチップ２３，２４をそれぞれ覆う第３及び第４の封止部８３，８４の厚みよりも、ＬＥＤチップ２２，２５をそれぞれ覆う第２及び第５の封止部８２，８５の厚みが厚く形成され、ＬＥＤチップ２２，２５をそれぞれ覆う第２及び第５の封止部８２，８５の厚みよりも、ＬＥＤチップ２１，２６をそれぞれ覆う第１及び第６の封止部８１，８６の厚みが厚く形成されている。   The first to sixth sealing portions 81 to 86 described above are each formed using a translucent resin material mixed with a light diffusing material, but the first and sixth sealing portions. 81, 86, the second and fifth sealing portions 82, 85, and the third and fourth sealing portions 83, 84 have different thicknesses. That is, in the light emitting device 13, the thickness of the sealing part that covers the outer LED chip among the LED chips 21 to 26 is formed to be thicker than the thickness of the sealing part that covers the inner LED chip. The thicknesses of the second and fifth sealing portions 82 and 85 that cover the LED chips 22 and 25 are larger than the thicknesses of the third and fourth sealing portions 83 and 84 that cover the LED chips 23 and 24, respectively. The thickness of the first and sixth sealing portions 81 and 86 covering the LED chips 21 and 26, respectively, rather than the thickness of the second and fifth sealing portions 82 and 85 formed and covering the LED chips 22 and 25, respectively. Is formed thick.

これにより発光装置１３では、第３及び第４の封止部８３，８４、第２及び第５の封止部８２，８５、第１及び第６の封止部８１，８６の順に、光の拡散性が向上する（つまりは、光の拡散量が増える）ようにしてあり、その結果、ＬＥＤチップ２１〜２６のうち外側に位置するＬＥＤチップの光ほど拡散され易くなり、ＬＥＤチップ２１〜２６のうち内側に位置するＬＥＤチップの光ほど拡散され難くなる。   As a result, in the light emitting device 13, the third and fourth sealing portions 83 and 84, the second and fifth sealing portions 82 and 85, and the first and sixth sealing portions 81 and 86 are sequentially arranged. The diffusibility is improved (that is, the amount of diffusion of light is increased). As a result, the light emitted from the LED chip located on the outer side among the LED chips 21 to 26 is more easily diffused. Among them, the light of the LED chip located on the inner side becomes difficult to diffuse.

そのため、内側に位置するＬＥＤチップ２３，２４の光のように、他のＬＥＤチップの光と混色され易い光は、あまり拡散せずに、外側に位置するＬＥＤチップ２１，２６の光のように、他のＬＥＤチップの光と混色され難い光を、よく拡散するようにしているのである。 Therefore, as the light from the LED chips 23 and 24 located inside, easily light is light and mixing of other LED chips, without significant diffusion, the LED chip 21, 26 located outside of the light Thus, light that is difficult to be mixed with light from other LED chips is diffused well.

つまり、上記実施形態３の発光装置１１では、封止部７を構成する第１〜第６の封止部７１〜７６に混入する光拡散材の量によって、第１〜第６の封止部７１〜７６における光拡散性を調整するようにしていたが、本実施形態の発光装置１３では、封止部８を構成する第１〜第６の封止部８１〜８６の厚みによって第１〜第６の封止部８１〜８６における光拡散性を調整しているのである。   That is, in the light emitting device 11 according to the third embodiment, the first to sixth sealing portions are formed depending on the amount of the light diffusing material mixed in the first to sixth sealing portions 71 to 76 constituting the sealing portion 7. Although the light diffusibility in 71-76 was adjusted, in the light-emitting device 13 of this embodiment, it is 1st-1st by the thickness of the 1st-6th sealing parts 81-86 which comprise the sealing part 8. FIG. The light diffusibility in the 6th sealing parts 81-86 is adjusted.

したがって、本実施形態の発光装置１３によれば、上記実施形態３と同様の効果を奏する上に、実施形態３のように光拡散材の混入量を調整するという手間のかかる作業を行う必要がなくなって、封止部８１〜８６の製造を容易に行えるようになるという効果を奏する。   Therefore, according to the light emitting device 13 of the present embodiment, in addition to the same effects as those of the third embodiment, it is necessary to perform a laborious operation of adjusting the mixing amount of the light diffusing material as in the third embodiment. There is an effect that the sealing portions 81 to 86 can be easily manufactured without being used.

尚、本実施形態の発光装置１３は、ＬＥＤチップ２１〜２６を個別に封止する複数の封止部８１〜８６を備えているが、発光装置１３の他例としては、ＬＥＤチップ２１〜２６を一括して封止したものの出射面を、ＬＥＤチップ２１〜２６のうち外側のＬＥＤチップを覆う封止部の厚みが、内側のＬＥＤチップ２１〜２６を覆う封止部の厚みよりも厚くなるような段形状に形成した封止部を備えるものであってもよく、ＬＥＤチップの数や配置等に応じて適宜変更すればよい。   In addition, although the light-emitting device 13 of this embodiment is provided with the some sealing parts 81-86 which seal LED chip 21-26 separately, as another example of the light-emitting device 13, LED chips 21-26 are provided. The thickness of the sealing part that covers the outer LED chip of the LED chips 21 to 26 is thicker than the thickness of the sealing part that covers the inner LED chips 21 to 26. A sealing portion formed in such a step shape may be provided, and may be appropriately changed according to the number and arrangement of the LED chips.

（実施形態６）
本実施形態の発光装置１４は、図７に示すように、２個の赤色ＬＥＤチップ２１，２４、及び４個の青色ＬＥＤチップ２３，２６〜２８と、これら計６個のＬＥＤチップ２１，２３，２４，２６〜２８が各々の発光面２１ａ，２３ａ，２４ａ，２６ａ〜２８ａの面方向を揃えた状態で実装される基板３と、各ＬＥＤチップ２１，２３，２４，２６〜２８をそれぞれ封止する第１〜第６の封止部９１〜９６と、封止部９１〜９６ごとＬＥＤチップ２１，２３，２４，２６〜２８を封止するレンズ部５とを備えている。つまり、本実施形態の発光装置１４は、上記実施形態１〜５とは異なり、緑色ＬＥＤチップ２２，２５の代わりに、青色ＬＥＤチップ２７，２８及び青色ＬＥＤチップ２７，２８から放射された所定波長の光（青色光）を、該所定波長とは異なる波長の光（緑色光）に変換する蛍光体を用いた白色ＬＥＤである。尚、上記実施形態１と同様の構成については、同一の符号を付して説明を省略する。 (Embodiment 6)
As shown in FIG. 7, the light emitting device 14 according to the present embodiment includes two red LED chips 21 and 24, four blue LED chips 23 and 26 to 28, and a total of six LED chips 21 and 23. , 24, 26 to 28 seal the substrate 3 mounted with the light emitting surfaces 21a, 23a, 24a, 26a to 28a being aligned with the LED chips 21, 23, 24, 26 to 28, respectively. The first to sixth sealing portions 91 to 96 to be stopped and the lens portion 5 to seal the LED chips 21, 23, 24, 26 to 28 together with the sealing portions 91 to 96 are provided. That is, unlike the first to fifth embodiments, the light emitting device 14 of the present embodiment has a predetermined wavelength emitted from the blue LED chips 27 and 28 and the blue LED chips 27 and 28 instead of the green LED chips 22 and 25. Is a white LED using a phosphor that converts light (blue light) into light (green light) having a wavelength different from the predetermined wavelength. In addition, about the structure similar to the said Embodiment 1, the same code | symbol is attached | subjected and description is abbreviate | omitted.

青色ＬＥＤチップ２７，２８は、上記の青色ＬＥＤチップ２３，２６と同様のものであって、それぞれ厚み方向の一表面（図７における上面）が発光面２７ａ，２８ａとして用いられる面発光型のＬＥＤチップである。そして、本実施形態の発光装置１４では、基板３に、３個１組のＬＥＤチップ２１，２７，２３、及びＬＥＤ２４，２８，２６が、図７における左方から右方にかけて、赤色ＬＥＤチップ２１、青色ＬＥＤチップ２７、青色ＬＥＤチップ２３、赤色ＬＥＤチップ２４、青色ＬＥＤチップ２８、青色ＬＥＤチップ２６の順に実装されている。   The blue LED chips 27 and 28 are the same as the blue LED chips 23 and 26 described above, and are surface emitting LEDs in which one surface in the thickness direction (the upper surface in FIG. 7) is used as the light emitting surfaces 27a and 28a. Chip. In the light emitting device 14 of the present embodiment, a set of three LED chips 21, 27, and 23 and LEDs 24, 28, and 26 are formed on the substrate 3 from the left to the right in FIG. The blue LED chip 27, the blue LED chip 23, the red LED chip 24, the blue LED chip 28, and the blue LED chip 26 are mounted in this order.

第２及び第５の封止部９２，９５は、青色ＬＥＤチップ２７，２８のそれぞれが放射する光を、所定波長の光（本実施形態では、５２０ｎｍ付近の緑色光）に変換するとともに、拡散、混色させるためのものであり、ＬＥＤチップ２１，２３，２４，２６〜２８が実装された基板３が収納された成形金型（図示せず）内に、透光性を有する樹脂材料（例えば透明なシリコーン樹脂やエポキシ樹脂等）に、光拡散材として蛍光体（図示せず）を混入させてなる樹脂材料を、青色ＬＥＤチップ２７，２８を個別に覆うようにして注入し、硬化させてなる平板状の樹脂成形品である。ここで、上記の蛍光体としては、例えば、ＳｒＧａ２Ｓ４・ｙＧａ２Ｓ３系や、Ｃａ８Ｚｎ（ＳｉＯ４）４Ｃｌ２系等の青色光により励起されて緑色光を放射するものを用いている。 The second and fifth sealing portions 92 and 95 convert light emitted from the blue LED chips 27 and 28 into light having a predetermined wavelength (green light in the present embodiment near 520 nm) and diffuse. A resin material having translucency (for example, in a molding die (not shown) in which the substrate 3 on which the LED chips 21, 23, 24, and 26 to 28 are mounted is housed. A transparent silicone resin, epoxy resin, or the like) is injected with a resin material in which a phosphor (not shown) is mixed as a light diffusing material so as to individually cover the blue LED chips 27 and 28, and is cured. It is a flat resin molded product. Here, the phosphor described above, for example, those that emit SrGa 2 S 4 · yGa 2 S 3 system or, Ca 8 Zn (SiO 4) 4 Cl 2 based green light by being excited by the blue light, such as Used.

また、第２及び第５の封止部９２，９５は、それぞれ対応する青色ＬＥＤチップ２７，２８の発光面２７ａ，２８ａを覆う部位の厚みが一定となるように形成されており、これにより発光面２７ａ，２８ａとそれぞれ平行する出射面９２ａ，９５ａをその一表面（図７における上面）に有している。言い換えれば、各封止部９２，９５において青色ＬＥＤチップ２７，２８の発光面２７ａ，２８ａと、青色ＬＥＤチップ２７，２８の厚み方向で重複する出射面９２ａ，９５ａは、各発光面２７ａ，２８ａと平行するように形成されているのである。   Further, the second and fifth sealing portions 92 and 95 are formed so that the thicknesses of the portions covering the light emitting surfaces 27a and 28a of the corresponding blue LED chips 27 and 28 are constant, thereby emitting light. One surface (upper surface in FIG. 7) has emission surfaces 92a and 95a parallel to the surfaces 27a and 28a, respectively. In other words, the light emitting surfaces 27a, 28a of the blue LED chips 27, 28 and the light emitting surfaces 92a, 95a overlapping in the thickness direction of the blue LED chips 27, 28 in the sealing portions 92, 95 are the light emitting surfaces 27a, 28a. It is formed so as to be parallel to the.

一方、残りの封止部９１，９３，９４，９６は、ＬＥＤチップ２１，２３，２４，２６のそれぞれが放射する光を拡散、混色させるためのものであり、ＬＥＤチップ２１，２３，２４，２６〜２８が実装された基板３が収納された成形金型（図示せず）内に、透光性を有する樹脂材料（例えば透明なシリコーン樹脂やエポキシ樹脂等）に、光拡散材を混入させてなる樹脂材料を、それぞれ対応するＬＥＤチップ２１，２３，２４，２６を覆うようにして注入し、硬化させてなる平板状の樹脂成形品である。   On the other hand, the remaining sealing portions 91, 93, 94, and 96 are for diffusing and mixing light emitted from the LED chips 21, 23, 24, and 26, respectively. A light diffusing material is mixed into a light-transmitting resin material (for example, transparent silicone resin or epoxy resin) in a molding die (not shown) in which the substrate 3 on which 26 to 28 are mounted is accommodated. The resin material is a flat resin molded product obtained by injecting and curing the corresponding LED chips 21, 23, 24, and 26.

このような封止部９１，９３，９４，９６は、上記第２及び第５の封止部９２，９５と同様に、それぞれ対応するＬＥＤチップ２１，２３，２４，２６の発光面２１ａ，２３ａ，２４ａ，２６ａとそれぞれ平行する出射面９１ａ，９３ａ，９４ａ，９６ａを、その一表面（図７における上面）側に有している。尚、光拡散材（光散乱材）としては、蛍光体ではなく、上記実施形態１で述べたようなガラス片（例えば、石英ガラス）や、金属粒子（例えば、ＡｕやＡｇ等）等を用いている。   Such sealing portions 91, 93, 94, 96 are the light emitting surfaces 21 a, 23 a of the corresponding LED chips 21, 23, 24, 26, respectively, similarly to the second and fifth sealing portions 92, 95. , 24a, and 26a are respectively provided on one surface (upper surface in FIG. 7) side of the emission surfaces 91a, 93a, 94a, and 96a. As the light diffusing material (light scattering material), not a phosphor but a glass piece (for example, quartz glass), metal particles (for example, Au, Ag, or the like) as described in the first embodiment is used. ing.

以上により本実施形態の発光装置１４は構成されており、上記の図示しない電極パッド間に外部の電源を接続して、ＬＥＤチップ２１，２３，２４，２６〜２８が接続された電極（図示せず）間に所定の電圧（駆動電圧）を印加することによって、各ＬＥＤチップ２１，２３，２４，２６〜２８がそれぞれ点灯して、光が放射される。このように各ＬＥＤチップ２１，２３，２４，２６〜２８より放射された光は、それぞれ対応する第１〜第６の封止部９１〜９６内を通ってレンズ部５内に進み、レンズ部５内を通過した後に、レンズ部５から外方へ出射される。   The light emitting device 14 of the present embodiment is configured as described above. An external power source is connected between the electrode pads (not shown), and the electrodes (not shown) to which the LED chips 21, 23, 24, and 26 to 28 are connected. 1), a predetermined voltage (driving voltage) is applied between the LED chips 21, 23, 24, and 26 to 28, and light is emitted. Thus, the light radiated from each of the LED chips 21, 23, 24, and 26 to 28 passes through the corresponding first to sixth sealing portions 91 to 96 into the lens portion 5, and the lens portion. After passing through 5, the light is emitted outward from the lens unit 5.

ここで、第２及び第５の封止部９２，９５内を青色ＬＥＤチップ２７，２８の光が通過する際には、第２及び第５の封止部９２，９５に混入された蛍光体によって、青色ＬＥＤチップ２７，２８の放射する青色光が、緑色光に変換されるとともに、蛍光体によって拡散（散乱）される。一方、残りの封止部９１，９３，９４，９６内をＬＥＤチップ２１，２３，２４，２６〜２８の光が通過する際には、封止部９１，９３，９４，９６に混入された光拡散材によって拡散（散乱）される。これにより発光装置１の混色性が向上することになる。尚、上記以外の封止部９１〜９６による作用は、上記実施形態１〜５で述べたとおりであるから本実施形態では説明を省略する。   Here, when the light of the blue LED chips 27 and 28 passes through the second and fifth sealing portions 92 and 95, the phosphor mixed in the second and fifth sealing portions 92 and 95. Thus, the blue light emitted from the blue LED chips 27 and 28 is converted into green light and diffused (scattered) by the phosphor. On the other hand, when the light from the LED chips 21, 23, 24, 26 to 28 passes through the remaining sealing portions 91, 93, 94, 96, they are mixed into the sealing portions 91, 93, 94, 96. It is diffused (scattered) by the light diffusing material. Thereby, the color mixing property of the light emitting device 1 is improved. In addition, since the effect | action by the sealing parts 91-96 other than the above is as having described in the said Embodiments 1-5, description is abbreviate | omitted in this embodiment.

以上述べた本実施形態の発光装置１４によれば、上記実施形態１と同様の効果を奏する。加えて、発光装置１４では、実施形態１の発光装置１とは異なり、緑色ＬＥＤチップ２２，２５を用いる代わりに、青色ＬＥＤチップ２７，２８及び青色ＬＥＤチップ２７，２８から放射された所定波長の光（青色光）を、該所定波長とは異なる波長の光（緑色光）に変換する蛍光体を用いて白色光を形成しているため、図８（ａ）に示すような光のスペクトル得ることができる。   According to the light emitting device 14 of the present embodiment described above, the same effects as those of the first embodiment can be obtained. In addition, in the light emitting device 14, unlike the light emitting device 1 of the first embodiment, instead of using the green LED chips 22, 25, the blue LED chips 27, 28 and the blue LED chips 27, 28 have a predetermined wavelength emitted. Since white light is formed using a phosphor that converts light (blue light) into light (green light) having a wavelength different from the predetermined wavelength, a light spectrum as shown in FIG. 8A is obtained. be able to.

一方、上記実施形態１の発光装置１は、赤色ＬＥＤチップと、緑色ＬＥＤチップと、青色ＬＥＤチップとを用いて白色光を形成しているため、その光のスペクトルは、図８（ｂ）に示すようになる。尚、図８中において、Ｒは、赤色ＬＥＤチップが放射する光（赤色光）のスペクトルを示し、Ｇは、緑色ＬＥＤチップが放射する光（緑色光）のスペクトルを示し、Ｂは、青色ＬＥＤチップが放射する光（青色光）のスペクトルを示し、ＦＧは、封止部９２，９５中の蛍光体が放射する光（緑色光）のスペクトルを示している。   On the other hand, since the light emitting device 1 of the first embodiment forms white light using the red LED chip, the green LED chip, and the blue LED chip, the spectrum of the light is shown in FIG. As shown. In FIG. 8, R represents the spectrum of light (red light) emitted from the red LED chip, G represents the spectrum of light (green light) emitted from the green LED chip, and B represents the blue LED. The spectrum of light (blue light) emitted by the chip is shown, and FG shows the spectrum of light (green light) emitted by the phosphors in the sealing portions 92 and 95.

図８（ａ），（ｂ）を見れば明らかなように、本実施形態の発光装置１４では、緑色ＬＥＤチップを用いる代わりに、青色ＬＥＤチップ２７，２８及び青色ＬＥＤチップ２７，２８から放射された所定波長の光（青色光）を、該所定波長とは異なる波長の光（緑色光）に変換する蛍光体を用いたことによって、実施形態１の発光装置１よりも、可視領域の光の波長を多く含んでいる、つまりは演色性が向上していることがわかる。   As apparent from FIGS. 8A and 8B, in the light emitting device 14 of this embodiment, instead of using the green LED chip, the light is emitted from the blue LED chips 27 and 28 and the blue LED chips 27 and 28. In addition, by using a phosphor that converts light having a predetermined wavelength (blue light) into light having a wavelength different from the predetermined wavelength (green light), the light in the visible region is lighter than that of the light emitting device 1 of the first embodiment. It can be seen that many wavelengths are included, that is, the color rendering is improved.

すなわち、本実施形態の発光装置１４によれば、赤色ＬＥＤチップ２１，２４及び青色ＬＥＤチップ２３，２６の光に加えて、緑色ＬＥＤチップ２２，２５の光の波長幅（図８（ｂ）参照）よりもブロードな波長幅を有する蛍光体の光（図８（ａ）参照）が放射されるから、緑色ＬＥＤチップ２２，２５を用いる場合に比べて白色光の演色性を向上できるという効果を奏する。   That is, according to the light emitting device 14 of the present embodiment, in addition to the light of the red LED chips 21 and 24 and the blue LED chips 23 and 26, the wavelength width of the light of the green LED chips 22 and 25 (see FIG. 8B). ) Phosphor light having a broader wavelength width (see FIG. 8A) is emitted, so that the color rendering property of white light can be improved as compared with the case where the green LED chips 22 and 25 are used. Play.

ところで、上記の例では、緑色ＬＥＤチップを用いる代わりに、青色ＬＥＤチップ２７，２８及び青色ＬＥＤチップ２７，２８から放射された所定波長の光（青色光）を、該所定波長とは異なる波長の光（緑色光）に変換する蛍光体を用いた例を示しているが、例えば、赤色ＬＥＤ２１，２４を用いる代わりに、青色ＬＥＤチップ２７，２８及び青色ＬＥＤチップ２７，２８から放射された所定波長の光（青色光）を、該所定波長とは異なる波長の光（赤色光）に変換する蛍光体を用いるようにしてもよく、この場合、図８（ｃ）に示すような光のスペクトルが得られる。尚、図８（ｃ）中にＦＲで示す光のスペクトルは、蛍光体より放射される光（赤色光）のスペクトルを示している。   By the way, in the above example, instead of using the green LED chip, the blue LED chips 27 and 28 and the light having a predetermined wavelength (blue light) emitted from the blue LED chips 27 and 28 have a wavelength different from the predetermined wavelength. Although the example using the fluorescent substance converted into light (green light) is shown, for example, instead of using the red LEDs 21 and 24, the predetermined wavelengths emitted from the blue LED chips 27 and 28 and the blue LED chips 27 and 28 are shown. A phosphor that converts light (blue light) into light having a wavelength different from the predetermined wavelength (red light) may be used. In this case, the light spectrum as shown in FIG. can get. In addition, the spectrum of the light shown by FR in FIG.8 (c) has shown the spectrum of the light (red light) radiated | emitted from fluorescent substance.

この場合、緑色ＬＥＤチップ２２，２５及び青色ＬＥＤチップ２３，２６の光に加えて、赤色ＬＥＤチップ２１，２４の光の波長幅（図８（ｂ）参照）よりもブロードな波長幅を有する蛍光体の光（図８（ｃ）参照）が放射されるから、赤色ＬＥＤチップ２１，２４を用いる場合に比べて白色光の演色性を向上できる。   In this case, in addition to the light of the green LED chips 22 and 25 and the blue LED chips 23 and 26, the fluorescence having a broader wavelength width than the wavelength width of the light of the red LED chips 21 and 24 (see FIG. 8B). Since body light (see FIG. 8C) is emitted, the color rendering of white light can be improved as compared with the case where the red LED chips 21 and 24 are used.

尚、本実施形態の発光装置１４では、赤色光、緑色光、青色光の３色の光を用いて、白色光を出力する発光装置としているが、光の組み合わせとしては、上記の例に限られるものではなく、例えば、青色光と黄色光等、補色関係にある色の光を用いて白色光を得るようにしてもよい。また、発光装置の出力する光の色も白色に限られるものではなく、発光色の異なる（放射する光の周波数が異なる）ＬＥＤチップや蛍光体を組み合わせることで、所望の光色が得られるように構成してもよい。 The light emitting device 14 of the present embodiment is a light emitting device that outputs white light using light of three colors, red light, green light, and blue light. However, the combination of light is limited to the above example. For example, white light may be obtained using light of a complementary color relationship such as blue light and yellow light. Also, the output to the light color of the light emitting device is also not limited to white, light emission color different (different frequencies emitted light) by combining the LED chip and the phosphor, a desired light color is obtained You may comprise as follows.

また、上記実施形態３，５のような構成を本実施形態にも採用するようにしてもよいことは勿論である。 Also, it may be adopted in the present embodiment constructed as the above embodiments 3 and 5 as a matter of course.

（実施形態７）
本実施形態の発光装置１５は、基板の形状に特徴があり、その他の構成は上記実施形態３と同様であるから説明を省略する。尚、実施形態３と同様の構成については、同一の符号を付して説明を省略する。 (Embodiment 7)
The light emitting device 15 of the present embodiment is characterized by the shape of the substrate, and the other configurations are the same as those of the third embodiment, and thus the description thereof is omitted. In addition, about the structure similar to Embodiment 3, the same code | symbol is attached | subjected and description is abbreviate | omitted.

すなわち、本実施形態の基板３０は、図９に示すように、各ＬＥＤチップ２１〜２６が実装される一表面（図９における上面）に、それぞれ傾斜角が異なる傾斜面３１〜３６が形成されている。   That is, as shown in FIG. 9, the substrate 30 of the present embodiment is formed with inclined surfaces 31 to 36 having different inclination angles on one surface (upper surface in FIG. 9) on which the LED chips 21 to 26 are mounted. ing.

ここで、傾斜面３１〜３６は、それぞれＬＥＤチップ２１〜２６を実装するための実装面として用いられるものであり、その傾斜角は、ＬＥＤチップ２１〜２６を基板３０に実装した際に、各ＬＥＤチップ２１〜２６の光軸Ｌ２１〜Ｌ２６が、レンズ部５中の所定の一点Ｐ（例えば、レンズ部５の光軸上の一点）にて交差するような角度に設定されている。尚、基板３０は、上記実施形態３で述べたように金属基板に傾斜面３１〜３６を形成したものや、立体成形基板に傾斜面３１〜３６を形成したもの等を用いることができる。   Here, the inclined surfaces 31 to 36 are used as mounting surfaces for mounting the LED chips 21 to 26, respectively, and the inclination angle is determined when the LED chips 21 to 26 are mounted on the substrate 30. The optical axes L <b> 21 to L <b> 26 of the LED chips 21 to 26 are set to angles that intersect at a predetermined point P in the lens unit 5 (for example, one point on the optical axis of the lens unit 5). In addition, as described in the third embodiment, the substrate 30 may be a metal substrate on which the inclined surfaces 31 to 36 are formed, a three-dimensionally formed substrate on which the inclined surfaces 31 to 36 are formed, or the like.

以上により本実施形態の発光装置１５は構成されており、ＬＥＤチップ２１〜２６を点灯させた場合、各ＬＥＤチップ２１〜２６より放射された光は、それぞれ第１〜第６の封止部７１〜７６内を通ってレンズ部５内に進み、レンズ部５内を通過した後に、レンズ部５から外方へ出射される。   The light emitting device 15 of the present embodiment is configured as described above. When the LED chips 21 to 26 are turned on, the light emitted from the LED chips 21 to 26 is the first to sixth sealing portions 71, respectively. The light travels through the lens unit 5 through the lens unit 76, passes through the lens unit 5, and then is emitted outward from the lens unit 5.

ここで、第１〜第６の封止部７１〜７６内を各ＬＥＤチップの光が通過する際には、ＬＥＤチップの光が、光拡散材によって拡散（散乱）されるために、これらＬＥＤチップ２１〜２６の光が混ぜ合わされ、これにより発光装置１の混色性が向上することになる。   Here, when the light of each LED chip passes through the first to sixth sealing portions 71 to 76, the light of the LED chip is diffused (scattered) by the light diffusing material. The light of the chips 21 to 26 is mixed, and thereby the color mixing property of the light emitting device 1 is improved.

また、第１〜第６の封止部７１〜７６の各出射面７１ａ〜７６ａから光が出射される際には、各出射面７１ａ〜７６ａがそれぞれ対応するＬＥＤチップの発光面２１ａ〜２６ａと平行しているために、光があまり封止部７１〜７６の側方（基板３の沿面方向側）へ広がらずに、各ＬＥＤチップの発光面２１ａ〜２６ａの面方向（基板３の面方向）へ向かう光が多くなっている。さらに、ＬＥＤチップ２１〜２６の光を拡散するための光拡散材を、レンズ部５に混入せずに、封止部７１〜７６のみに混入しているため、レンズ部５の出射面近傍で光が拡散されて光が広がってしまう（言い換えれば、見かけ上の光源サイズが大きくなってしまう）ことがなくなる。 Further, when light is emitted from the emission surfaces 71a to 76a of the first to sixth sealing portions 71 to 76, the emission surfaces 71a to 76a correspond to the light emitting surfaces 21a to 26a of the LED chips respectively corresponding to the emission surfaces 71a to 76a. Since the light is parallel, the light does not spread so much to the side of the sealing portions 71 to 76 (the creeping direction side of the substrate 3), and the surface direction of the light emitting surfaces 21a to 26a of each LED chip (the surface direction of the substrate 3). ) There is more light going to. Furthermore, since the light diffusing material for diffusing the light from the LED chips 21 to 26 is not mixed in the lens unit 5 but only in the sealing units 71 to 76, in the vicinity of the exit surface of the lens unit 5. The light is not diffused and spreads (in other words, the apparent light source size increases).

さらに、ＬＥＤチップ２１〜２６は、各々の光軸Ｌ２１〜Ｌ２６がレンズ部５内の所定の点Ｐで交差するように基板３０に実装されているため、各ＬＥＤチップ２１〜２６の光の放射範囲において他の光の放射範囲と重複する領域が増えるとともに、レンズ部５の出射面において全てのＬＥＤチップ２１〜２６の光が照射される面積が増え、これによりＬＥＤチップの光の混色性が向上し、レンズ部５から色むらの少ない一様な白色光を照射できるようになる。   Furthermore, since the LED chips 21 to 26 are mounted on the substrate 30 so that the optical axes L21 to L26 intersect at a predetermined point P in the lens unit 5, the light emission of the LED chips 21 to 26 is performed. As the area overlapping with other light emission ranges increases in the range, the area irradiated with the light of all the LED chips 21 to 26 on the exit surface of the lens unit 5 increases, and thereby the color mixing property of the light from the LED chips is increased. The lens portion 5 can radiate uniform white light with little color unevenness.

したがって、本実施形態の発光装置１５では、上記実施形態３と同様の効果を奏する上に、各ＬＥＤチップ２１〜２６の光軸Ｌ２１〜Ｌ２６を交差させていることによって、ＬＥＤチップの光の混色性をさらに向上できるという効果を奏する。   Therefore, in the light emitting device 15 according to the present embodiment, the same effects as those of the third embodiment are obtained, and the light axes L21 to L26 of the LED chips 21 to 26 are crossed, whereby the light mixture of the light from the LED chips is achieved. There is an effect that the sex can be further improved.

尚、各光軸Ｌ２１〜Ｌ２６を交差させる点Ｐの位置は、上記の場所に限らず、状況に応じて好適な場所に設定すればよい。   The position of the point P where the optical axes L21 to L26 cross each other is not limited to the above place, and may be set to a suitable place according to the situation.

実施形態１の発光装置の概略断面図である。1 is a schematic cross-sectional view of a light emitting device according to Embodiment 1. FIG. （ａ）は、実施形態１の発光装置の説明図であり、（ｂ）は、比較例の発光装置の説明図である。(A) is explanatory drawing of the light-emitting device of Embodiment 1, (b) is explanatory drawing of the light-emitting device of a comparative example. 実施形態２の発光装置の概略断面図である。6 is a schematic cross-sectional view of a light emitting device according to Embodiment 2. FIG. 実施形態３の発光装置の概略断面図である。6 is a schematic cross-sectional view of a light emitting device according to Embodiment 3. FIG. 実施形態４の発光装置の概略断面図である。6 is a schematic cross-sectional view of a light emitting device according to Embodiment 4. FIG. 実施形態５の発光装置の概略断面図である。6 is a schematic cross-sectional view of a light emitting device according to Embodiment 5. FIG. 実施形態６の発光装置の概略断面図である。7 is a schematic cross-sectional view of a light emitting device according to Embodiment 6. FIG. （ａ）は、実施形態６の発光装置から放射される光のスペクトルを示すグラフであり、（ｂ）は、実施形態１の発光装置から放射される光のスペクトルを示すグラフであり、（ｃ）は、実施形態６の他例の発光装置から放射される光のスペクトルを示すグラフである。(A) is a graph which shows the spectrum of the light radiated | emitted from the light-emitting device of Embodiment 6, (b) is a graph which shows the spectrum of the light radiated | emitted from the light-emitting device of Embodiment 1, (c) ) Is a graph showing a spectrum of light emitted from the light emitting device of another example of Embodiment 6. 実施形態７の発光装置の概略断面図である。10 is a schematic cross-sectional view of a light emitting device according to Embodiment 7. FIG.

符号の説明Explanation of symbols

１ 発光装置
２１，２４ 赤色ＬＥＤチップ
２１ａ，２４ａ 発光面
２２，２５ 緑色ＬＥＤチップ
２２ａ，２５ａ 発光面
２３，２６ 青色ＬＥＤチップ
２３ａ，２６ａ 発光面
３ 基板
４０，４１ 封止部
４０，４１ａ 出射面
５ レンズ部 DESCRIPTION OF SYMBOLS 1 Light-emitting device 21, 24 Red LED chip 21a, 24a Light emission surface 22, 25 Green LED chip 22a, 25a Light emission surface 23, 26 Blue LED chip 23a, 26a Light emission surface 3 Board | substrate 40, 41 Sealing part 40, 41a Output surface 5 Lens part

Claims (4)

発光面の面方向を揃えた状態で基板に実装され放射する光の波長がそれぞれ異なる複数のＬＥＤチップと、光拡散材を混入させた透光性を有する樹脂材料を用いて形成され前記ＬＥＤチップを封止する封止部と、透光性を有する樹脂材料を用いて形成され前記封止部ごと複数の前記ＬＥＤチップを覆うレンズ部とを備え、前記封止部は、前記ＬＥＤチップの前記発光面と平行する出射面を有しており、複数の前記ＬＥＤチップのうち外側の前記ＬＥＤチップの光が内側の前記ＬＥＤチップの光よりも拡散され易くなるように、外側の前記ＬＥＤチップの前記発光面を覆う前記封止部の厚みが、内側の前記ＬＥＤチップの前記発光面を覆う前記封止部の厚みよりも厚く形成されていることを特徴とする発光装置。 A plurality of LED chips wavelength of light different from each other to be mounted on the substrate in a state of aligning the surface direction of the light emitting surface radiation, is formed by using a resin material having a light transmitting property obtained by mixing a light diffusing material wherein L includes a sealing portion for sealing the ED chip, and a lens unit which is formed of a resin material covering the plurality of the L ED tip each said sealing portion having a light transmitting property, wherein the sealing portion, the L ED has an emission surface parallel to the onset light plane of the chip, so that the light outside of the L ED chip of the plurality of the LED chips is easily diffused than the light of the inside of the LED chip , that the sealing portion of the thickness will covering the onset light surface of the outside of the LED chips are thicker than the inner side of the L ED the calling light plane the thickness of the sealing portion it covering the chip A light emitting device characterized by the above. 前記レンズ部の出射面には、前記ＬＥＤチップの放射する光の反射を低減する間隔の凹凸を有する反射低減部が形成されていることを特徴とする請求項１に記載の発光装置。 Wherein the emission surface of the lenses unit, the light emitting device according to claim 1, characterized in that the reflection reducing portion having an uneven spacing to reduce reflection of light emission of the L ED chip is formed. 前記封止部は、前記光拡散材が混入されていない透光性を有する樹脂材料からなり、前記ＬＥＤチップを封止する封止層と、前記光拡散材が混入された透光性を有する樹脂材料からなり、前記封止層を覆う光拡散層とで構成されていることを特徴とする請求項１又は２に記載の発光装置。 The sealing unit is composed of a resin material having a light-transmitting said light diffusion material is not mixed, and the sealing layer for sealing the L ED chip, a light-transmitting said light diffusing material is mixed The light-emitting device according to claim 1, wherein the light-emitting device includes a light diffusion layer that covers the sealing layer. 前記光拡散材は、前記ＬＥＤチップから放射された所定波長の光を、前記所定波長とは異なる波長の光に変換する蛍光体であることを特徴とする請求項１〜３のいずれか１項に記載の発光装置。 The light diffusion material, the light of the L ED predetermined wavelength emitted from the chip, any one of the preceding claims, characterized in that said the predetermined wavelength is a phosphor that converts the light of different wavelengths 1 The light emitting device according to item.
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