JP5355952B2 - アレイ基板及びこれを含む表示パネル。 - Google Patents

アレイ基板及びこれを含む表示パネル。 Download PDF

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Publication number
JP5355952B2
JP5355952B2 JP2008194457A JP2008194457A JP5355952B2 JP 5355952 B2 JP5355952 B2 JP 5355952B2 JP 2008194457 A JP2008194457 A JP 2008194457A JP 2008194457 A JP2008194457 A JP 2008194457A JP 5355952 B2 JP5355952 B2 JP 5355952B2
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Japan
Prior art keywords
pattern
wiring
array substrate
light blocking
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2008194457A
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English (en)
Japanese (ja)
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JP2009109982A5 (enExample
JP2009109982A (ja
Inventor
壽 ▲ジョン▼ 金
洸 賢 金
南 錫 李
政 旭 許
智 允 鄭
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Display Co Ltd
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Samsung Display Co Ltd
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Publication date
Application filed by Samsung Display Co Ltd filed Critical Samsung Display Co Ltd
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Publication of JP2009109982A5 publication Critical patent/JP2009109982A5/ja
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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1337—Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers
    • G02F1/133707—Structures for producing distorted electric fields, e.g. bumps, protrusions, recesses, slits in pixel electrodes
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/134309—Electrodes characterised by their geometrical arrangement
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/134309—Electrodes characterised by their geometrical arrangement
    • G02F1/134345—Subdivided pixels, e.g. for grey scale or redundancy
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/13624—Active matrix addressed cells having more than one switching element per pixel
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6723—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device having light shields
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Geometry (AREA)
  • Liquid Crystal (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Thin Film Transistor (AREA)
JP2008194457A 2007-10-29 2008-07-29 アレイ基板及びこれを含む表示パネル。 Expired - Fee Related JP5355952B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2007-0108792 2007-10-29
KR1020070108792A KR101392741B1 (ko) 2007-10-29 2007-10-29 표시 기판 및 이를 포함하는 표시 패널

Publications (3)

Publication Number Publication Date
JP2009109982A JP2009109982A (ja) 2009-05-21
JP2009109982A5 JP2009109982A5 (enExample) 2011-09-08
JP5355952B2 true JP5355952B2 (ja) 2013-11-27

Family

ID=40582370

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008194457A Expired - Fee Related JP5355952B2 (ja) 2007-10-29 2008-07-29 アレイ基板及びこれを含む表示パネル。

Country Status (4)

Country Link
US (1) US20090109384A1 (enExample)
JP (1) JP5355952B2 (enExample)
KR (1) KR101392741B1 (enExample)
CN (1) CN101425520B (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20100007081A (ko) * 2008-07-11 2010-01-22 삼성전자주식회사 표시 기판 및 이를 갖는 표시 패널
EP2759873B1 (en) 2013-01-28 2019-06-26 Samsung Display Co., Ltd. Display device
CN103680328B (zh) 2013-12-31 2015-09-09 京东方科技集团股份有限公司 阵列基板及显示装置
KR102167715B1 (ko) * 2014-07-04 2020-10-20 삼성디스플레이 주식회사 표시 장치
CN105185810A (zh) * 2015-08-07 2015-12-23 京东方科技集团股份有限公司 一种显示基板及其制备方法、显示面板和显示装置
KR101998831B1 (ko) 2016-07-29 2019-07-11 삼성디스플레이 주식회사 표시 장치
US10101609B2 (en) * 2016-10-21 2018-10-16 A.U. Vista, Inc. Pixel structure utilizing nanowire grid polarizers with multiple domain vertical alignment
CN115835725A (zh) * 2022-12-26 2023-03-21 深圳市华星光电半导体显示技术有限公司 显示基板及其制备方法、显示面板

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1930768A1 (en) * 1997-06-12 2008-06-11 Sharp Kabushiki Kaisha Vertically-aligned (VA) liquid crystal display device
KR100393642B1 (ko) * 2000-09-14 2003-08-06 엘지.필립스 엘시디 주식회사 광시야각 액정 표시 장치
JP4117148B2 (ja) * 2002-05-24 2008-07-16 日本電気株式会社 半透過型液晶表示装置
US7206048B2 (en) * 2003-08-13 2007-04-17 Samsung Electronics Co., Ltd. Liquid crystal display and panel therefor
TWI261712B (en) * 2004-09-30 2006-09-11 Chi Mei Optoelectronics Corp Liquid crystal display
KR101133760B1 (ko) 2005-01-17 2012-04-09 삼성전자주식회사 박막 트랜지스터 표시판 및 이를 포함하는 액정 표시 장치
JP4767588B2 (ja) * 2005-05-27 2011-09-07 シャープ株式会社 液晶表示装置
TWI304906B (en) * 2005-06-17 2009-01-01 Au Optronics Corp A va type liquid crystal display
JP2007017492A (ja) 2005-07-05 2007-01-25 Sony Corp 液晶表示素子および液晶表示装置
TWI330735B (en) * 2005-07-11 2010-09-21 Chi Mei Optoelectronics Corp Multi-domain vertical alignment lcd
KR101237011B1 (ko) * 2005-08-02 2013-02-26 삼성디스플레이 주식회사 액정 표시 장치
JP2007065185A (ja) * 2005-08-30 2007-03-15 Victor Co Of Japan Ltd 反射型液晶表示装置
JP2007086205A (ja) * 2005-09-20 2007-04-05 Sharp Corp 表示パネルおよび表示装置
EP2479604B1 (en) * 2005-12-05 2015-07-15 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device
KR101245991B1 (ko) * 2006-06-23 2013-03-20 엘지디스플레이 주식회사 액정표시장치 및 그 제조 방법
TWI287685B (en) * 2006-08-31 2007-10-01 Au Optronics Corp Liquid crystal display, active matrix substrate and test method therefor
TWI333564B (en) * 2006-11-10 2010-11-21 Au Optronics Corp Pixel structures of a color filter substrate, an active device array substrate, and a liquid crystal display panel

Also Published As

Publication number Publication date
CN101425520A (zh) 2009-05-06
US20090109384A1 (en) 2009-04-30
CN101425520B (zh) 2013-03-27
JP2009109982A (ja) 2009-05-21
KR20090043114A (ko) 2009-05-06
KR101392741B1 (ko) 2014-05-09

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