JP5348917B2 - レーザ装置及び顕微鏡 - Google Patents
レーザ装置及び顕微鏡 Download PDFInfo
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- JP5348917B2 JP5348917B2 JP2008074126A JP2008074126A JP5348917B2 JP 5348917 B2 JP5348917 B2 JP 5348917B2 JP 2008074126 A JP2008074126 A JP 2008074126A JP 2008074126 A JP2008074126 A JP 2008074126A JP 5348917 B2 JP5348917 B2 JP 5348917B2
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- laser
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/09—Processes or apparatus for excitation, e.g. pumping
- H01S3/091—Processes or apparatus for excitation, e.g. pumping using optical pumping
- H01S3/094—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light
- H01S3/0941—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light of a laser diode
- H01S3/09415—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light of a laser diode the pumping beam being parallel to the lasing mode of the pumped medium, e.g. end-pumping
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B21/00—Microscopes
- G02B21/06—Means for illuminating specimens
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/06—Construction or shape of active medium
- H01S3/0602—Crystal lasers or glass lasers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/106—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity
- H01S3/1062—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity using a controlled passive interferometer, e.g. a Fabry-Perot etalon
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/11—Mode locking; Q-switching; Other giant-pulse techniques, e.g. cavity dumping
- H01S3/1106—Mode locking
- H01S3/1112—Passive mode locking
- H01S3/1115—Passive mode locking using intracavity saturable absorbers
- H01S3/1118—Semiconductor saturable absorbers, e.g. semiconductor saturable absorber mirrors [SESAMs]; Solid-state saturable absorbers, e.g. carbon nanotube [CNT] based
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
- H01S3/16—Solid materials
- H01S3/1601—Solid materials characterised by an active (lasing) ion
- H01S3/162—Solid materials characterised by an active (lasing) ion transition metal
- H01S3/1623—Solid materials characterised by an active (lasing) ion transition metal chromium, e.g. Alexandrite
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
- H01S3/16—Solid materials
- H01S3/163—Solid materials characterised by a crystal matrix
- H01S3/1631—Solid materials characterised by a crystal matrix aluminate
- H01S3/1633—BeAl2O4, i.e. Chrysoberyl
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
- H01S3/16—Solid materials
- H01S3/163—Solid materials characterised by a crystal matrix
- H01S3/164—Solid materials characterised by a crystal matrix garnet
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
- H01S3/16—Solid materials
- H01S3/163—Solid materials characterised by a crystal matrix
- H01S3/1645—Solid materials characterised by a crystal matrix halide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
- H01S3/16—Solid materials
- H01S3/163—Solid materials characterised by a crystal matrix
- H01S3/1645—Solid materials characterised by a crystal matrix halide
- H01S3/1648—Solid materials characterised by a crystal matrix halide with the formula XYZF6 (Colquiriite structure), wherein X is Li, Na, K or Rb, Y is Mg, Ca, Sr, Cd or Ba and Z is Al, Sc or Ga
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
- H01S5/32341—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP
Description
2、19 集光レンズ
3、11、16 ダイクロイックミラー
4 固体レーザ媒質
5 出力ミラー
5A 分散補償ミラー
6 石英板
7 共振器ミラー
9 半導体可飽和吸収ミラー
10、20、30、40 レーザ装置
12 コリメートレンズ
13 出力変調器
14 ビーム拡大光学系
15 ガルバノミラー
17 対物レンズ
18 サンプル
50 多光子顕微鏡装置
Claims (10)
- 共振器と、
前記共振器内に配置され、励起光が入射されることにより第1の結晶軸であるC軸に平行な方向に偏光した直線偏光光を発振光として出力する固体レーザ媒質と、
青色領域の波長の直線偏光光で且つ偏光方向が前記固体レーザ媒質の前記第1の結晶軸と直交する第2の結晶軸に平行な方向である青色励起光を前記励起光として前記固体レーザ媒質に入射させる励起手段と、
を備え、
前記固体レーザ媒質における、前記青色励起光の偏光方向についての前記青色励起光の吸収強度のピークが、前記青色励起光の偏光方向についての赤色領域の波長を有する赤色励起光の吸収強度のピークよりも大きく、かつ、前記第1の結晶軸に平行な方向についての前記青色励起光の吸収強度のピークよりも大きい
ことを特徴とするレーザ装置。 - 前記固体レーザ媒質における、前記青色励起光の偏光方向についての前記青色励起光の吸収強度のピークが、各結晶軸についての前記青色励起光の吸収強度のピークのうち最大値を示すものであることを特徴とする請求項1記載のレーザ装置。
- 前記固体レーザ媒質が、Cr3+イオンが添加された固体レーザ媒質であることを特徴とする請求項1又は請求項2記載のレーザ装置。
- 前記固体レーザ媒質が、アレキサンドライト(Cr:BeAl2O4)、Cr:LiCAF(LiCaAlF6)、Cr:LiSAF(LiSrAlF6)、及びCr:LiSGAF(LiSrGaF6)の何れかであることを特徴とする請求項1〜3の何れか1項に記載のレーザ装置。
- 前記青色励起光の波長が、4A2基底準位から4T1準位への励起吸収波長と一致することを特徴とする請求項3又は請求項4記載のレーザ装置。
- 前記励起手段が、GaNから成る半導体レーザを含むことを特徴とする請求項1〜5の何れか1項に記載のレーザ装置。
- 前記共振器内に、前記発振光の発振波長を制御する波長制御素子が配置されたことを特徴とする請求項1〜6の何れか1項に記載のレーザ装置。
- 前記共振器内に、モード同期を誘起するためのモード同期素子が配置されたことを特徴とする請求項1〜7の何れか1項に記載のレーザ装置。
- 前記モード同期素子が、半導体可飽和吸収ミラーデバイスであることを特徴とする請求項8記載のレーザ装置。
- 前記請求項1〜請求項9の何れか1項に記載のレーザ装置と、
前記レーザ装置からのレーザ光を測定対象物に集光して照射する光学系と、
前記測定対象物からの戻り光を集光して検出する検出手段と、
を備えた顕微鏡。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008074126A JP5348917B2 (ja) | 2008-03-21 | 2008-03-21 | レーザ装置及び顕微鏡 |
US12/401,631 US7777881B2 (en) | 2008-03-21 | 2009-03-11 | Laser device and microscope |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008074126A JP5348917B2 (ja) | 2008-03-21 | 2008-03-21 | レーザ装置及び顕微鏡 |
Publications (2)
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JP2009231483A JP2009231483A (ja) | 2009-10-08 |
JP5348917B2 true JP5348917B2 (ja) | 2013-11-20 |
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ID=41088557
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JP2008074126A Expired - Fee Related JP5348917B2 (ja) | 2008-03-21 | 2008-03-21 | レーザ装置及び顕微鏡 |
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US (1) | US7777881B2 (ja) |
JP (1) | JP5348917B2 (ja) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB201015565D0 (en) * | 2010-09-17 | 2010-10-27 | Univ Dundee | Disk laser for nonlinear microscopy applications in living organisms |
JP5662974B2 (ja) * | 2011-07-29 | 2015-02-04 | 富士フイルム株式会社 | レーザ光源ユニット、その制御方法、光音響画像生成装置及び方法 |
JP5681675B2 (ja) | 2011-07-29 | 2015-03-11 | 富士フイルム株式会社 | 光音響画像生成装置及び音響波ユニット |
JP5662973B2 (ja) | 2011-07-29 | 2015-02-04 | 富士フイルム株式会社 | レーザ光源ユニット、その制御方法、光音響画像生成装置及び方法 |
JP5991539B2 (ja) * | 2013-03-25 | 2016-09-14 | 株式会社リコー | レーザ発振装置及びレーザ加工機 |
JP6219258B2 (ja) * | 2013-10-31 | 2017-10-25 | 富士フイルム株式会社 | レーザ装置、及び光音響計測装置 |
JP6640733B2 (ja) * | 2014-04-01 | 2020-02-05 | アイピージー フォトニクス コーポレーション | 垂直入射取付けの多結晶tm:ii−vi材料を有する中赤外線カーレンズモードロックレーザー及び、多結晶tm:ii−viカーレンズモードロックレーザーのパラメータを制御するための方法 |
US11005229B2 (en) | 2017-12-05 | 2021-05-11 | Han's Laser Technology Industry Group Co., Ltd. | All solid-state laser light source device |
EP3978584A4 (en) * | 2019-05-27 | 2022-07-27 | Panasonic Intellectual Property Management Co., Ltd. | ELECTROLUMINESCENT DEVICE, AND ELECTRONIC DEVICE AND INSPECTION METHOD USING THE SAME |
CN113067240A (zh) * | 2021-03-24 | 2021-07-02 | 山东大学 | 高重频自锁模金绿宝石激光器及在甲状旁腺辨识中的应用 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5488626A (en) * | 1991-01-14 | 1996-01-30 | Light Age, Inc. | Method of and apparatus for pumping of transition metal ion containing solid state lasers using diode laser sources |
EP1187273A1 (de) * | 2000-09-08 | 2002-03-13 | Universität Bern | Laserresonator zur Erzeugung polarisierter Laserstrahlung |
US6969845B2 (en) * | 2002-12-20 | 2005-11-29 | Textron Systems Corporation | System and processes for causing the simultaneity of events including controlling a pulse repetition frequency of a pulsed laser for disabling a scanning imaging system |
WO2005117216A2 (en) * | 2004-05-25 | 2005-12-08 | Melles Griot, Inc. | Short wavelength diode-pumped solid-state laser |
JP2008529282A (ja) * | 2005-01-24 | 2008-07-31 | リサーチ ファウンデイション オブ ザ シティー ユニヴァーシティ オブ ニューヨーク | Cr3+ドープレーザー材料及びレーザー並びに製造及び使用の方法 |
JP2007281388A (ja) * | 2006-04-12 | 2007-10-25 | Fujifilm Corp | レーザ装置 |
-
2008
- 2008-03-21 JP JP2008074126A patent/JP5348917B2/ja not_active Expired - Fee Related
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2009
- 2009-03-11 US US12/401,631 patent/US7777881B2/en not_active Expired - Fee Related
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Publication number | Publication date |
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US7777881B2 (en) | 2010-08-17 |
US20090237661A1 (en) | 2009-09-24 |
JP2009231483A (ja) | 2009-10-08 |
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