JP5346952B2 - 基板処理装置 - Google Patents
基板処理装置 Download PDFInfo
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- JP5346952B2 JP5346952B2 JP2010539247A JP2010539247A JP5346952B2 JP 5346952 B2 JP5346952 B2 JP 5346952B2 JP 2010539247 A JP2010539247 A JP 2010539247A JP 2010539247 A JP2010539247 A JP 2010539247A JP 5346952 B2 JP5346952 B2 JP 5346952B2
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- 239000000758 substrate Substances 0.000 title claims abstract description 213
- 239000007789 gas Substances 0.000 claims abstract description 476
- 239000003054 catalyst Substances 0.000 claims abstract description 186
- 238000006243 chemical reaction Methods 0.000 claims abstract description 88
- 239000012495 reaction gas Substances 0.000 claims abstract description 36
- 238000006555 catalytic reaction Methods 0.000 claims description 52
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 47
- 239000010419 fine particle Substances 0.000 claims description 25
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 claims description 20
- 229910052697 platinum Inorganic materials 0.000 claims description 19
- 230000015572 biosynthetic process Effects 0.000 claims description 14
- 239000002245 particle Substances 0.000 claims description 13
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 claims description 12
- 229910052707 ruthenium Inorganic materials 0.000 claims description 12
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 11
- 229910052741 iridium Inorganic materials 0.000 claims description 10
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 claims description 10
- 239000010949 copper Substances 0.000 claims description 9
- 239000002019 doping agent Substances 0.000 claims description 9
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 8
- 239000012159 carrier gas Substances 0.000 claims description 8
- 229910052802 copper Inorganic materials 0.000 claims description 8
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- 238000010586 diagram Methods 0.000 description 19
- 239000000126 substance Substances 0.000 description 19
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 18
- 229910052760 oxygen Inorganic materials 0.000 description 18
- 239000004065 semiconductor Substances 0.000 description 18
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- 238000004140 cleaning Methods 0.000 description 6
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- 150000001875 compounds Chemical class 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- 238000007254 oxidation reaction Methods 0.000 description 5
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 4
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- 125000000217 alkyl group Chemical group 0.000 description 4
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- 239000002105 nanoparticle Substances 0.000 description 3
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 3
- 239000000843 powder Substances 0.000 description 3
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- RGGPNXQUMRMPRA-UHFFFAOYSA-N triethylgallium Chemical compound CC[Ga](CC)CC RGGPNXQUMRMPRA-UHFFFAOYSA-N 0.000 description 3
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 3
- 229910001928 zirconium oxide Inorganic materials 0.000 description 3
- POILWHVDKZOXJZ-ARJAWSKDSA-M (z)-4-oxopent-2-en-2-olate Chemical class C\C([O-])=C\C(C)=O POILWHVDKZOXJZ-ARJAWSKDSA-M 0.000 description 2
- YRAJNWYBUCUFBD-UHFFFAOYSA-N 2,2,6,6-tetramethylheptane-3,5-dione Chemical class CC(C)(C)C(=O)CC(=O)C(C)(C)C YRAJNWYBUCUFBD-UHFFFAOYSA-N 0.000 description 2
- KCXVZYZYPLLWCC-UHFFFAOYSA-N EDTA Chemical class OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O KCXVZYZYPLLWCC-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
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- 125000003342 alkenyl group Chemical group 0.000 description 2
- 125000005037 alkyl phenyl group Chemical group 0.000 description 2
- JPUHCPXFQIXLMW-UHFFFAOYSA-N aluminium triethoxide Chemical compound CCO[Al](OCC)OCC JPUHCPXFQIXLMW-UHFFFAOYSA-N 0.000 description 2
- NWAIGJYBQQYSPW-UHFFFAOYSA-N azanylidyneindigane Chemical compound [In]#N NWAIGJYBQQYSPW-UHFFFAOYSA-N 0.000 description 2
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- 230000007547 defect Effects 0.000 description 2
- AXAZMDOAUQTMOW-UHFFFAOYSA-N dimethylzinc Chemical compound C[Zn]C AXAZMDOAUQTMOW-UHFFFAOYSA-N 0.000 description 2
- HNPSIPDUKPIQMN-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Al]O[Al]=O HNPSIPDUKPIQMN-UHFFFAOYSA-N 0.000 description 2
- FFUAGWLWBBFQJT-UHFFFAOYSA-N hexamethyldisilazane Chemical compound C[Si](C)(C)N[Si](C)(C)C FFUAGWLWBBFQJT-UHFFFAOYSA-N 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
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- 230000003647 oxidation Effects 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 2
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical group N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- FDNAPBUWERUEDA-UHFFFAOYSA-N silicon tetrachloride Chemical class Cl[Si](Cl)(Cl)Cl FDNAPBUWERUEDA-UHFFFAOYSA-N 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
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- 238000002230 thermal chemical vapour deposition Methods 0.000 description 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 2
- VOITXYVAKOUIBA-UHFFFAOYSA-N triethylaluminium Chemical compound CC[Al](CC)CC VOITXYVAKOUIBA-UHFFFAOYSA-N 0.000 description 2
- OTRPZROOJRIMKW-UHFFFAOYSA-N triethylindigane Chemical compound CC[In](CC)CC OTRPZROOJRIMKW-UHFFFAOYSA-N 0.000 description 2
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 2
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- 239000010457 zeolite Substances 0.000 description 2
- JIAARYAFYJHUJI-UHFFFAOYSA-L zinc dichloride Chemical compound [Cl-].[Cl-].[Zn+2] JIAARYAFYJHUJI-UHFFFAOYSA-L 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- 229910015801 BaSrTiO Inorganic materials 0.000 description 1
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- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
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- 229910021193 La 2 O 3 Inorganic materials 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
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- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 1
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- 238000002955 isolation Methods 0.000 description 1
- 238000000608 laser ablation Methods 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 1
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- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
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- 150000003377 silicon compounds Chemical class 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
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- 239000007921 spray Substances 0.000 description 1
- 238000010301 surface-oxidation reaction Methods 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- LFQCEHFDDXELDD-UHFFFAOYSA-N tetramethyl orthosilicate Chemical compound CO[Si](OC)(OC)OC LFQCEHFDDXELDD-UHFFFAOYSA-N 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- 231100000331 toxic Toxicity 0.000 description 1
- 230000002588 toxic effect Effects 0.000 description 1
- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 description 1
- 239000005052 trichlorosilane Substances 0.000 description 1
- USLHPQORLCHMOC-UHFFFAOYSA-N triethoxygallane Chemical compound CCO[Ga](OCC)OCC USLHPQORLCHMOC-UHFFFAOYSA-N 0.000 description 1
- MCXZOLDSEPCWRB-UHFFFAOYSA-N triethoxyindigane Chemical compound [In+3].CC[O-].CC[O-].CC[O-] MCXZOLDSEPCWRB-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011592 zinc chloride Substances 0.000 description 1
- 235000005074 zinc chloride Nutrition 0.000 description 1
Images
Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/407—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C16/452—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by activating reactive gas streams before their introduction into the reaction chamber, e.g. by ionisation or addition of reactive species
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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Description
次に、本発明を実施するための最良の形態について、以下に説明する。
図1、図2を参照しながら、本発明の第1の実施形態による成膜装置について説明する。図1は、本実施形態における成膜装置の断面図であり、図2は、本実施形態における成膜装置の反応ガス及び成膜ガスが供給される部分の平面図である。
次に、第1の実施形態の変形例1による成膜装置について説明する。変形例1の成膜装置は、選択壁17が設けられていない点で、図1から図9に示した成膜装置と相違する。
図11に示す成膜装置では、各々の触媒112から噴出されるH2Oガスの噴出口114が複数設けられている。このように、複数の噴出口114を設けることにより、より均一な成膜が可能となる。
次に、第1の実施形態の変形例2による成膜方法について説明する。具体的には、この変形例2の成膜方法により、窒化物膜等の化合物膜を成膜する場合を説明する。
(1)2N2H4 → 2NH* 3+H* 2
(2) NH3 → NH* + H* 2,NH* 2 + H
上記のように、本変形例においては、触媒反応装置5内にヒドラジン及び窒素酸化物から選択された1種以上の窒素供給ガスを導入し、微粒子状の触媒と接触させて得られた高いエネルギーを有する反応ガスを触媒反応装置から噴出させて有機金属化合物ガスと反応させることによって、大量の電気エネルギーを必要とせずに、各種の基板上に低コストで効率良く金属窒化物膜を形成することができる。このような、大量の発熱を伴う化学反応は、窒素供給ガスとして特定のガスを選択し、微粒子状の触媒を使用することによって、実現することができたものである。
(変形例3)
次に、第1の実施形態の変形例3による成膜方法について説明する。変形例3の成膜方法においては、特にH2ガスとO2ガスが分離して間欠的に供給される。
最初に、図17(a)に示すように、H2ガスを導入する。これにより、本実施形態において用いられる触媒であるPt触媒212の表面に吸着している物質を還元しクリーニングを行なうと共に、Pt触媒212表面にH原子を化学結合させる。
O2ガスを導入することにより、図17(d)に示すように、O原子がPt触媒212に化学吸着し、O原子、H原子はともにPt触媒表面でマイグレーションする。
この後、制御バルブ65、66、67を同時に閉じ、H2ガス、O2ガス、成膜ガスの供給を停止する。
以下、これまでの手順を所定の回数繰返し行うことにより、基板22上に所定の膜厚を有する金属酸化物の膜が堆積される。O2ガスの供給を停止することにより(言い換えると、O2ガスの供給の流量を0sccmまで減少することにより)、触媒反応容器11内において触媒12表面に付着しているO原子を減少させることができ、H原子が触媒12の表面に付着し易くなる。このため、高温のH2Oガスを効率よく生成することができる。
次に、第1の実施形態の変形例4による成膜方法について説明する。変形例4の成膜方法においては、H2ガスとO2ガスを供給するタイミングと、成膜ガスを供給するタイミングが、変形例3の成膜方法におけるタイミングと異なる。
図21に示すように、最初に、制御バルブ66を開きH2ガスを導入し、その後、制御バルブ65を開きO2ガスを導入する。これにより、触媒反応容器11内で高温のH2Oガスが効率よく生成される。
この後、制御バルブ67を開き成膜ガスを導入し、生成された高温のH2Oガスとの主に気相中における反応により基板22上に成膜を行なう。
この工程を繰返し行なうことにより成膜が行なわれる。このような成膜プロセスにより、品質の高い膜を得ることができる。尚、この制御は、制御手段68により制御バルブ65、66、67の開閉及び流量の制御を通して行なわれる。
通常のALD(Atomic Layer Deposition)法により成膜した酸化物等からなる高誘電体膜中には炭素や水素等の不純物及び酸素の空孔が含まれており、これらによりトラップや固定電荷が形成されるため、トランジスタの電気的特性が損なわれる。不純物や酸素の空孔を低減する方法としては、様々な方法があるが、いずれも装置コストが高くなる、又は、プロセスが複雑になるという問題点を有していた。
また、本実施形態においては、HfO2を堆積する例を説明したが、HfO2以外にも、ZrO2、TiO2、La2O3、Pr2O3、Al2O3、SrTiO3、BaTiO3、BaSrTiO3、PZT(PbZrTiO)、SBT(SrBiTaO)、BSCCO(Bi2Sr2CanCun+1O2n+6)等を堆積することができる。
第2の実施形態は、本発明に係る基板処理方法及び基板処理装置に関する。
(有機物除去方法及び装置)
最初に、本実施形態に係る基板処理方法の一種である有機物の除去方法について、発明に至った経緯等を含め説明する。
レジスト膜等の有機物を除去するためのアッシング技術は、長年に亘って広く利用されている。しかしながら、アッシングを行っても、図22Aに示されるように、パターン301上の中央部にライン状に残るレジストの残渣302、図22Bに示されるようにパターン301上にランダムに残るレジストの残渣303、図22Cに示されるように曲がったパターン301のエッジ部分の上に残るレジストの残渣304が残ってしまう場合がある。
平均粒径0.3mmのγ−Al2O3担体に1.0gの塩化白金酸六水和物0.27gを含浸により担持し、大気中450℃において4時間焼成することにより、触媒312となる10wt%Pt/γ−Al2O3触媒を得ることができる。この触媒312を触媒反応部310内に、約0.02g充填し、金属メッシュ316により覆った後、チャンバー320内に設置する。
また、図26に示すような試料を作製し、上記と同様に有機物の除去を行なう。具体的には、Si基板333上に、膜厚6nmのSiO2からなるゲート酸化膜334、SiO2からなる素子分離領域335を形成した後、基板温度600℃にてSiH4ガスを用いた減圧CVD法により、多結晶シリコン膜336を100nm成膜する。この多結晶シリコン膜336上にフォトレジストを塗布し、プリベークし、露光装置において露光、現像を行ない、レジストパターン337を形成する。この後、Cl2とHBrガスを用いてドライエッチングによりレジストパターン337の形成されていない領域の多結晶シリコン膜336を除去する。これにより図26に示すような試料が得られる。
次に、本実施形態である基板処理方法の一種であるポリシリコン、アモルファスシリコン、微結晶シリコン等からなるシリコン膜の膜質改善方法について説明する。これらのシリコン膜の膜厚は、例えば、0.01〜10μm程度である。
次に、本実施形態である基板処理方法の一種である酸化膜の膜質改善方法について説明する。この方法は、酸素欠損している酸化膜において酸素を供給し、化学量論比どおりの膜を形成する酸化膜の膜質改善方法である。この酸化膜は、例えば酸化亜鉛、ITO(Indium Tin Oxide)等の透明導電膜や、IGZO(Indium Gallium Zinc Oxide)、酸化亜鉛等の半導体膜や、酸化ハフニウム、酸化タンタル等の誘電体膜であって良い。
次に、本実施形態である基板処理方法の一種であるSi基板の表面に酸化膜を形成する酸化膜形成方法について説明する。
次に、第2の実施形態の変形例1による基板処理方法について説明する。変形例1の基板処理方法は、H2ガスとO2ガスとを分離して供給する触媒反応部を有する装置において好適に実施される。
次に、第2の実施形態の変形例2による基板処理方法について説明する。変形例2による基板処理方法は、複数の触媒反応部を有する装置において好適に実施することができる。図31を参照しながら、本変形例の基板処理方法に好適な装置について説明する。
次に、第2の実施形態の変形例3による基板処理方法について説明する。変形例3の基板処理方法は、複数の触媒反応部を有する装置において好適に実施することができる。図31を参照しながら、本変形例の基板処理方法に用いられる装置について説明する。
図33に示す装置は、複数の触媒612と、触媒612からチャンバー620内にH2Oガスを噴出するため、各々の触媒612に対して設けられる複数の噴出口614とを有している。複数の噴出口614が設けられるため、より均一な処理が可能となる。
本変形例における基板処理方法に用いられる装置は、酸化膜形成方法に限らず、本発明の他の実施形態による基板処理方法にも用いることができ、大面積な基板においても均一な処理が可能である。
次に、第2の実施形態の変形例4による基板処理方法について説明する。変形例4の基板処理方法では、特にH2ガスとO2ガスを分離して間欠的に供給される。この基板処理方法は、図17を参照しながら説明した原理に基づくものである。この基板処理方法は、具体的には、図30に示す成膜装置において行われ、図37に示すタイミングでO2ガス、H2ガスが導入される。
ガスの間欠的な供給は、本変形例に限らず、本発明の他の実施形態による基板処理方法に適用可能である。
本国際出願は、2008年11月21日に出願された日本国特許出願2008−297907号に基づく優先権を主張するものであり、その全内容をここに援用する。
Claims (20)
- 反応室と、
前記反応室内に設けられ、基板を支持するよう構成される基板支持部と、
前記反応室に前記基板支持部に対向して配列され、ガス導入部から導入された原料ガスと触媒とを接触させることにより反応ガスを生成し、生成された前記反応ガスを反応室の内部空間に噴出するための噴出口を有するよう構成され、噴出された前記反応ガスにより前記基板支持部に支持される前記基板を処理する、前記触媒が内部に設けられる触媒反応容器である複数の触媒反応部と、
を備える基板処理装置。 - 前記反応ガスと反応する成膜ガスを前記内部空間に供給するよう構成され、前記基板支持部に支持される前記基板に前記反応ガスと前記成膜ガスとの反応生成物を堆積させる成膜ガス供給部を更に備える、請求項1に記載の基板処理装置。
- 前記複数の触媒反応部の噴出口は、一つの噴出口が、他の4個の最近接となる噴出口に囲まれるように二次元的に配列されており、4個の前記噴出口の各々の中心を結ぶことによって得られる四角形のうち、最小の面積を有する四角形の中心部に前記成膜ガス供給部が設けられている、請求項2に記載の基板処理装置。
- 前記複数の触媒反応部の噴出口は、一つの噴出口が、他の6個の最近接となる噴出口に囲まれるように二次元的に配列されており、3個の前記噴出口の各々の中心を結ぶことによって得られる三角形のうち、最小の面積を有する三角形の中心部に前記成膜ガス供給部が設けられている、請求項2に記載の基板処理装置。
- 前記噴出口から噴出した反応ガスのうち、高いエネルギーを有する反応ガスを選択するため、先端部が開口した円錐状又は長円の錐状の選択壁を更に備え、
前記成膜ガス供給部の先端は、前記基板に対し前記選択壁の外周の縁と略同一高さ位置に設けられており、前記反応ガスの噴出方向と交差するように前記成膜ガスが供給される、請求項2に記載の基板処理装置。 - 前記噴出口から噴出した反応ガスのうち、高いエネルギーを有する反応ガスを選択するため、先端部が開口した円錐状又は長円の錐状の選択壁を更に備え、
前記成膜ガス供給部は、前記選択壁の外周の縁に沿って円形状又は長円形状に設けられており、前記反応ガスの噴出方向と交差するように前記成膜ガスが供給されるものである、請求項2に記載の基板処理装置。 - 前記成膜ガス供給部に近接して、ドーパントガスを導入するためのドーパントガス供給部が設けられる、請求項2に記載の基板処理装置。
- 前記触媒反応部の噴出口と、前記成膜ガス供給部との間に、均一な成膜を行なうためのシャワープレートが設けられている、請求項2に記載の基板処理装置。
- 前記触媒反応部の噴出口と、前記シャワープレートとの間には、キャリアガスを導入するためのキャリアガス導入口と、前記導入したキャリアガスを排気するためのキャリアガス排気口とが設けられている、請求項8に記載の基板処理装置。
- 前記原料ガスが、ヒドラジン又は窒素酸化物からなるガスである、請求項2に記載の基板処理装置。
- 成膜の際における前記基板の温度は室温から1500℃までの範囲にある、請求項2に記載の基板処理装置。
- 前記噴出口は、反応ガスを噴出するための先端部が漏斗状に開口している、請求項1乃至11のいずれか一項に記載の基板処理装置。
- 前記噴出口から噴出した反応ガスのうち、高いエネルギーを有する反応ガスを選択するため、先端部が開口した円錐状又は長円の錐状の選択壁が設けられている、請求項12に記載の基板処理装置。
- 前記噴出口と選択壁の間の領域を排気するための真空ポンプが設けられている、請求項13に記載の基板処理装置。
- 前記複数の触媒反応部の前記噴出口は、一つの噴出口が、他の4個の最近接となる噴出口に囲まれるように二次元的に配列されている、請求項1乃至14のいずれか一項に記載の基板処理装置。
- 前記複数の触媒反応部の前記噴出口は、一つの噴出口が、他の6個の最近接となる噴出口に囲まれるように二次元的に配列されている、請求項1乃至15のいずれか一項に記載の基板処理装置。
- 前記原料ガスが、H2ガス及びO2ガスと、H2O2ガスとの一方であり、前記反応ガスがH2Oガスである、請求項1乃至16のいずれか一項に記載の基板処理装置。
- 前記触媒が粒子状である、請求項1乃至17のいずれか一項に記載の基板処理装置。
- 前記触媒が、平均粒径0.05〜2.0mmの粒子状の担体と、該担体に担持される平均粒径1〜10nmの微粒子成分とを含む、請求項1乃至18のいずれか一項に記載の基板処理装置。
- 前記触媒が、酸化物セラミックスからなる粒子状の担体と、該担体に担持される白金、ルテニウム、イリジウム及び銅の微粒子成分のうちの少なくとも一つとを含む、請求項19に記載の基板処理装置。
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