JP5345333B2 - フォトマスクブランク、フォトマスク及びその製造方法 - Google Patents

フォトマスクブランク、フォトマスク及びその製造方法 Download PDF

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Publication number
JP5345333B2
JP5345333B2 JP2008094139A JP2008094139A JP5345333B2 JP 5345333 B2 JP5345333 B2 JP 5345333B2 JP 2008094139 A JP2008094139 A JP 2008094139A JP 2008094139 A JP2008094139 A JP 2008094139A JP 5345333 B2 JP5345333 B2 JP 5345333B2
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Japan
Prior art keywords
film
phase shift
pattern
mask
light
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JP2008094139A
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English (en)
Japanese (ja)
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JP2009244793A5 (enExample
JP2009244793A (ja
Inventor
順 野澤
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Hoya Corp
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Hoya Corp
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Publication date
Application filed by Hoya Corp filed Critical Hoya Corp
Priority to JP2008094139A priority Critical patent/JP5345333B2/ja
Priority to DE102009014610A priority patent/DE102009014610A1/de
Priority to TW098110303A priority patent/TWI457694B/zh
Priority to US12/414,198 priority patent/US7989122B2/en
Priority to KR1020090026982A priority patent/KR101536195B1/ko
Publication of JP2009244793A publication Critical patent/JP2009244793A/ja
Publication of JP2009244793A5 publication Critical patent/JP2009244793A5/ja
Priority to US13/163,564 priority patent/US8293435B2/en
Application granted granted Critical
Publication of JP5345333B2 publication Critical patent/JP5345333B2/ja
Priority to KR1020150038958A priority patent/KR101586344B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/34—Phase-edge PSM, e.g. chromeless PSM; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/80—Etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0332—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their composition, e.g. multilayer masks, materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
    • H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
JP2008094139A 2008-03-31 2008-03-31 フォトマスクブランク、フォトマスク及びその製造方法 Active JP5345333B2 (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP2008094139A JP5345333B2 (ja) 2008-03-31 2008-03-31 フォトマスクブランク、フォトマスク及びその製造方法
DE102009014610A DE102009014610A1 (de) 2008-03-31 2009-03-24 Fotomaskenrohling, Fotomaske und Verfahren zu ihrer Herstellung
TW098110303A TWI457694B (zh) 2008-03-31 2009-03-27 光罩基底、光罩及其製造方法
KR1020090026982A KR101536195B1 (ko) 2008-03-31 2009-03-30 포토마스크 블랭크, 포토마스크 및 그 제조 방법
US12/414,198 US7989122B2 (en) 2008-03-31 2009-03-30 Photomask blank, photomask, and methods of manufacturing the same
US13/163,564 US8293435B2 (en) 2008-03-31 2011-06-17 Photomask blank, photomask, and methods of manufacturing the same
KR1020150038958A KR101586344B1 (ko) 2008-03-31 2015-03-20 포토마스크 블랭크, 포토마스크 및 그 제조 방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008094139A JP5345333B2 (ja) 2008-03-31 2008-03-31 フォトマスクブランク、フォトマスク及びその製造方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2013168651A Division JP5701946B2 (ja) 2013-08-14 2013-08-14 位相シフトマスクの製造方法

Publications (3)

Publication Number Publication Date
JP2009244793A JP2009244793A (ja) 2009-10-22
JP2009244793A5 JP2009244793A5 (enExample) 2011-04-21
JP5345333B2 true JP5345333B2 (ja) 2013-11-20

Family

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Family Applications (1)

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JP2008094139A Active JP5345333B2 (ja) 2008-03-31 2008-03-31 フォトマスクブランク、フォトマスク及びその製造方法

Country Status (5)

Country Link
US (2) US7989122B2 (enExample)
JP (1) JP5345333B2 (enExample)
KR (2) KR101536195B1 (enExample)
DE (1) DE102009014610A1 (enExample)
TW (1) TWI457694B (enExample)

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JP5599213B2 (ja) * 2010-03-30 2014-10-01 Ｈｏｙａ株式会社 モールドの製造方法
US8435704B2 (en) * 2010-03-30 2013-05-07 Hoya Corporation Mask blank, transfer mask, and methods of manufacturing the same
JP5123349B2 (ja) * 2010-04-19 2013-01-23 Ｈｏｙａ株式会社 多階調マスクの製造方法
KR101197250B1 (ko) * 2010-04-23 2012-11-05 주식회사 에스앤에스텍 블랭크 마스크, 포토 마스크 및 그의 제조 방법
JP5820555B2 (ja) * 2011-03-31 2015-11-24 Hoya株式会社 マスクブランク及び位相シフトマスクの製造方法
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JP6058318B2 (ja) * 2011-09-14 2017-01-11 Hoya株式会社 マスクブランク、転写用マスク、転写用マスクの製造方法、および半導体デバイスの製造方法
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KR102056509B1 (ko) * 2012-07-13 2019-12-16 호야 가부시키가이샤 마스크 블랭크 및 위상 시프트 마스크의 제조 방법
JP6389375B2 (ja) * 2013-05-23 2018-09-12 Hoya株式会社 マスクブランクおよび転写用マスク並びにそれらの製造方法
US9726972B2 (en) 2013-09-10 2017-08-08 Hoya Corporation Mask blank, transfer mask, and method for manufacturing transfer mask
JP6264238B2 (ja) * 2013-11-06 2018-01-24 信越化学工業株式会社 ハーフトーン位相シフト型フォトマスクブランク、ハーフトーン位相シフト型フォトマスク及びパターン露光方法
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JP6451561B2 (ja) * 2015-09-03 2019-01-16 信越化学工業株式会社 フォトマスクブランク
JP6621626B2 (ja) * 2015-09-18 2019-12-18 Hoya株式会社 マスクブランク、位相シフトマスクおよび半導体デバイスの製造方法
US10816891B2 (en) * 2016-12-14 2020-10-27 Taiwan Semiconductor Manufacturing Company, Ltd. Photomask and fabrication method therefor
KR102553992B1 (ko) * 2017-03-31 2023-07-10 가부시키가이샤 토판 포토마스크 위상 시프트 마스크 블랭크, 위상 시프트 마스크 및 위상 시프트 마스크의 제조 방법
US10553428B2 (en) 2017-08-22 2020-02-04 Taiwan Semiconductor Manufacturing Company, Ltd. Reflection mode photomask and fabrication method therefore
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Also Published As

Publication number Publication date
DE102009014610A1 (de) 2009-10-01
US20110250529A1 (en) 2011-10-13
US7989122B2 (en) 2011-08-02
US20090246645A1 (en) 2009-10-01
US8293435B2 (en) 2012-10-23
KR101536195B1 (ko) 2015-07-13
KR101586344B1 (ko) 2016-01-18
JP2009244793A (ja) 2009-10-22
TW201001059A (en) 2010-01-01
KR20150037796A (ko) 2015-04-08
KR20090104732A (ko) 2009-10-06
TWI457694B (zh) 2014-10-21

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