JP5337347B2 - 半導体装置、半導体装置の作製方法 - Google Patents

半導体装置、半導体装置の作製方法 Download PDF

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JP5337347B2
JP5337347B2 JP2007048996A JP2007048996A JP5337347B2 JP 5337347 B2 JP5337347 B2 JP 5337347B2 JP 2007048996 A JP2007048996 A JP 2007048996A JP 2007048996 A JP2007048996 A JP 2007048996A JP 5337347 B2 JP5337347 B2 JP 5337347B2
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region
insulating layer
layer
concentration
channel formation
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JP2008211144A (ja
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敦生 磯部
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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JP2007048996A 2007-02-28 2007-02-28 半導体装置、半導体装置の作製方法 Active JP5337347B2 (ja)

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JP2007048996A JP5337347B2 (ja) 2007-02-28 2007-02-28 半導体装置、半導体装置の作製方法

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JP2007048996A JP5337347B2 (ja) 2007-02-28 2007-02-28 半導体装置、半導体装置の作製方法

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JP2008211144A JP2008211144A (ja) 2008-09-11
JP2008211144A5 JP2008211144A5 (https=) 2010-04-02
JP5337347B2 true JP5337347B2 (ja) 2013-11-06

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Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102037048B1 (ko) 2009-11-13 2019-10-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
WO2012014786A1 (en) 2010-07-30 2012-02-02 Semiconductor Energy Laboratory Co., Ltd. Semicondcutor device and manufacturing method thereof
US8735231B2 (en) * 2010-08-26 2014-05-27 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of dual-gate thin film transistor
TWI602303B (zh) * 2011-01-26 2017-10-11 半導體能源研究所股份有限公司 半導體裝置及其製造方法
US9117916B2 (en) * 2011-10-13 2015-08-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising oxide semiconductor film
US9048323B2 (en) 2012-04-30 2015-06-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03153081A (ja) * 1989-11-10 1991-07-01 Nippon Soken Inc 電界効果型トランジスタおよびその製造方法
JP3103159B2 (ja) * 1991-07-08 2000-10-23 株式会社東芝 半導体装置
JP2004296491A (ja) * 2003-03-25 2004-10-21 Sanyo Electric Co Ltd 半導体装置

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