JP5335443B2 - ウエハ支持構造体及び該ウエハ支持構造体の製造に用いられる層システム - Google Patents

ウエハ支持構造体及び該ウエハ支持構造体の製造に用いられる層システム Download PDF

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JP5335443B2
JP5335443B2 JP2008556786A JP2008556786A JP5335443B2 JP 5335443 B2 JP5335443 B2 JP 5335443B2 JP 2008556786 A JP2008556786 A JP 2008556786A JP 2008556786 A JP2008556786 A JP 2008556786A JP 5335443 B2 JP5335443 B2 JP 5335443B2
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layer
wafer
support
elastomeric material
layer system
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Japanese (ja)
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JP2009528688A (ja
JP2009528688A5 (https=
Inventor
アンドレアス ヤーコプ
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シン マテリアルズ アクチェンゲゼルシャフト
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Priority claimed from DE102006009394.1A external-priority patent/DE102006009394B4/de
Priority claimed from DE102006009353.4A external-priority patent/DE102006009353B4/de
Priority claimed from DE102006048799.0A external-priority patent/DE102006048799B4/de
Priority claimed from DE102006048800.8A external-priority patent/DE102006048800B4/de
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0442—Apparatus for placing on an insulating substrate, e.g. tape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P54/00—Cutting or separating of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7402—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7402—Wafer tapes, e.g. grinding or dicing support tapes
    • H10P72/7404—Wafer tapes, e.g. grinding or dicing support tapes the wafer tape being a laminate of three or more layers, e.g. including additional layers beyond a base layer and an uppermost adhesive layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7448—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support the bond interface between the auxiliary support and the wafer comprising two or more, e.g. multilayer adhesive or adhesive and release layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7416—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7416—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H10P72/7418—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used during dicing or grinding of passive members, e.g. a chip mounting substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7422—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used to protect an active side of a device or wafer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7432—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used in a transfer process involving transfer directly from an origin substrate to a target substrate without use of an intermediate handle substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/744—Details of chemical or physical process used for separating the auxiliary support from a device or a wafer
    • H10P72/7442—Separation by peeling
    • H10P72/7446—Separation by peeling using a peeling wheel
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
    • Y10T156/10—Methods of surface bonding and/or assembly therefor
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49826—Assembling or joining
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T83/00—Cutting
    • Y10T83/04—Processes

Landscapes

  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
JP2008556786A 2006-03-01 2007-03-01 ウエハ支持構造体及び該ウエハ支持構造体の製造に用いられる層システム Active JP5335443B2 (ja)

Applications Claiming Priority (9)

Application Number Priority Date Filing Date Title
DE102006009353.4 2006-03-01
DE102006009394.1 2006-03-01
DE102006009394.1A DE102006009394B4 (de) 2006-03-01 2006-03-01 Mehrlagenschichtsystem mit einer Schicht als Trennschicht zum Trägern von dünnen Wafern bei der Halbleiterherstellung, Verwendung des Schichtsystems beim und Verfahren zum Abdünnen eines Wafers
DE102006009353.4A DE102006009353B4 (de) 2006-03-01 2006-03-01 Mehrlagenschichtsystem zum Trägern von dünnen Wafern bei der Halbleiterherstellung mit der Eigenschaft zum Haltern mittels elektrostatischer Aufladung
DE102006048799.0A DE102006048799B4 (de) 2006-10-16 2006-10-16 Verfahren und Einrichtung zum Ablösen eines dünnen Wafers oder bereits vereinzelter Bauelemente eines dünnen Wafers von einem Träger
DE102006048800.8A DE102006048800B4 (de) 2006-10-16 2006-10-16 Mehrlagenschichtsystem mit hartem Träger zum Trägern von dünnen Wafern bei der Halbleiterherstellung
DE102006048799.0 2006-10-16
DE102006048800.8 2006-10-16
PCT/EP2007/051952 WO2007099146A1 (de) 2006-03-01 2007-03-01 Verfahren zum bearbeiten insbesondere dünnen der rückseite eines wafers, wafer-träger-anordnung hierfür und verfahren zur herstellung einer solchen wafer-träger-anordnung

Publications (3)

Publication Number Publication Date
JP2009528688A JP2009528688A (ja) 2009-08-06
JP2009528688A5 JP2009528688A5 (https=) 2010-04-22
JP5335443B2 true JP5335443B2 (ja) 2013-11-06

Family

ID=37963755

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008556786A Active JP5335443B2 (ja) 2006-03-01 2007-03-01 ウエハ支持構造体及び該ウエハ支持構造体の製造に用いられる層システム

Country Status (5)

Country Link
US (1) US8911583B2 (https=)
EP (1) EP1994554B1 (https=)
JP (1) JP5335443B2 (https=)
KR (1) KR101458143B1 (https=)
WO (1) WO2007099146A1 (https=)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2022114112A1 (ja) 2020-11-30 2022-06-02 日産化学株式会社 積層体、積層体の製造方法、及び半導体基板の製造方法
WO2022202029A1 (ja) 2021-03-26 2022-09-29 日産化学株式会社 積層体、積層体の製造方法、及び半導体基板の製造方法

Families Citing this family (43)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU2003299296A1 (en) * 2002-11-29 2004-06-23 Fraunhofer-Gesellschaft Zur Forderung Der Angewandten Forschung E.V. Method and device for machining a wafer, in addition to a wafer comprising a separation layer and a support layer
KR101004849B1 (ko) * 2008-09-02 2010-12-28 삼성전기주식회사 박막소자 제조방법
DE102008044200B4 (de) * 2008-11-28 2012-08-23 Thin Materials Ag Bonding-Verfahren
DE102008055155A1 (de) * 2008-12-23 2010-07-01 Thin Materials Ag Trennverfahren für ein Schichtsystem umfassend einen Wafer
JP2012064710A (ja) * 2010-09-15 2012-03-29 Asahi Glass Co Ltd 半導体素子の製造方法
US8696864B2 (en) 2012-01-26 2014-04-15 Promerus, Llc Room temperature debonding composition, method and stack
DE102012101237A1 (de) * 2012-02-16 2013-08-22 Ev Group E. Thallner Gmbh Verfahren zum temporären Verbinden eines Produktsubstrats mit einem Trägersubstrat
JP2013211505A (ja) 2012-03-02 2013-10-10 Fujifilm Corp 半導体装置の製造方法
US10186458B2 (en) * 2012-07-05 2019-01-22 Infineon Technologies Ag Component and method of manufacturing a component using an ultrathin carrier
JP5909460B2 (ja) 2012-09-28 2016-04-26 富士フイルム株式会社 半導体装置製造用仮接着剤、並びに、それを用いた接着性支持体、及び、半導体装置の製造方法。
JP5982248B2 (ja) 2012-09-28 2016-08-31 富士フイルム株式会社 半導体装置製造用仮接合層、積層体、及び、半導体装置の製造方法。
JP2014070191A (ja) 2012-09-28 2014-04-21 Fujifilm Corp 半導体装置製造用仮接着剤、並びに、それを用いた接着性支持体、及び、半導体装置の製造方法。
US9269623B2 (en) 2012-10-25 2016-02-23 Rohm And Haas Electronic Materials Llc Ephemeral bonding
US9331230B2 (en) * 2012-10-30 2016-05-03 Cbrite Inc. LED die dispersal in displays and light panels with preserving neighboring relationship
KR102075635B1 (ko) * 2013-01-03 2020-03-02 삼성전자주식회사 웨이퍼 지지 구조물, 웨이퍼 지지 구조물을 포함하는 반도체 패키지의 중간 구조물, 및 중간 구조물을 이용한 반도체 패키지의 제조 방법
KR102309244B1 (ko) * 2013-02-20 2021-10-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
JP6114596B2 (ja) 2013-03-26 2017-04-12 富士フイルム株式会社 半導体装置製造用仮接合用積層体、および、半導体装置の製造方法
JP6050170B2 (ja) 2013-03-27 2016-12-21 富士フイルム株式会社 半導体装置製造用仮接合用積層体、および、半導体装置の製造方法
JP5975918B2 (ja) 2013-03-27 2016-08-23 富士フイルム株式会社 半導体装置製造用仮接合用積層体、および、半導体装置の製造方法
JP6182491B2 (ja) 2013-08-30 2017-08-16 富士フイルム株式会社 積層体およびその応用
US9315696B2 (en) 2013-10-31 2016-04-19 Dow Global Technologies Llc Ephemeral bonding
CN106165074B (zh) 2014-03-19 2020-05-12 三星电子株式会社 制造半导体装置的方法
TWI661935B (zh) 2014-06-13 2019-06-11 Fujifilm Corporation 暫時接著用積層體、暫時接著用積層體的製造方法以及帶有元件晶圓的積層體
TWI667311B (zh) 2014-06-13 2019-08-01 日商富士軟片股份有限公司 Temporary fixing of the adhesive, adhesive film, adhesive support, laminate and adhesive kit
TW201601918A (zh) 2014-06-13 2016-01-16 富士軟片股份有限公司 暫時接著用積層體、暫時接著用積層體的製造方法以及帶有元件晶圓的積層體
JP2016021560A (ja) * 2014-06-20 2016-02-04 株式会社半導体エネルギー研究所 剥離装置
DE102014219095A1 (de) * 2014-09-22 2016-03-24 Nissan Chemical Industries, Ltd. Wafer-Träger-Anordnung
US10141216B2 (en) * 2014-10-22 2018-11-27 Promerus, Llc Room temperature debondable and thermally curable compositions
US9644118B2 (en) 2015-03-03 2017-05-09 Dow Global Technologies Llc Method of releasably attaching a semiconductor substrate to a carrier
WO2016164535A1 (en) 2015-04-08 2016-10-13 Nitto Denko Corporation Sheet, moisture–proof method of adherend using the sheet and corrosion–proof method of metal plate using the sheet
FR3038128B1 (fr) * 2015-06-26 2018-09-07 Commissariat A L'energie Atomique Et Aux Energies Alternatives Procede de fabrication d'un dispositif electronique
US11437275B2 (en) 2015-08-31 2022-09-06 Disco Corporation Method of processing wafer and protective sheeting for use in this method
US11183415B2 (en) 2016-06-22 2021-11-23 Nissan Chemical Corporation Adhesive containing polydimethyl siloxane
WO2018216732A1 (ja) 2017-05-24 2018-11-29 日産化学株式会社 エポキシ変性ポリシロキサンを含有する仮接着剤
CN110870049B (zh) 2017-07-06 2023-10-03 日产化学株式会社 包含含有苯基的聚硅氧烷的临时粘接剂
CN111684584A (zh) * 2018-02-01 2020-09-18 康宁股份有限公司 用于卷形式的电子封装和其他应用的单一化基材
US12559655B2 (en) 2018-05-01 2026-02-24 Nissan Chemical Corporation Polysiloxane-containing temporary adhesive comprising heat-resistant polymerization inhibitor
EP3882954A4 (en) 2018-11-16 2022-07-27 Nissan Chemical Corporation LAMINATE PEELING METHOD, LAMINATE AND METHOD OF MAKING A LAMINATE
KR102869673B1 (ko) 2018-11-16 2025-10-13 닛산 가가쿠 가부시키가이샤 적외선 박리용 접착제 조성물, 적층체, 적층체의 제조 방법 및 박리 방법
SG11202105574YA (en) 2018-11-28 2021-06-29 Nissan Chemical Corp Adhesive agent composition, layered product and production method for layered product, and method for reducing thickness of semiconductor forming substrate
CN113491007A (zh) * 2019-03-11 2021-10-08 Hrl实验室有限责任公司 在金属嵌入式芯片组件(meca)处理期间保护晶粒的方法
US11735464B1 (en) * 2020-08-21 2023-08-22 American Semiconductor, Inc. Method of demounting thin semiconductor devices
JPWO2023182138A1 (https=) 2022-03-24 2023-09-28

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6828812B2 (en) * 1991-06-04 2004-12-07 Micron Technology, Inc. Test apparatus for testing semiconductor dice including substrate with penetration limiting contacts for making electrical connections
US5548091A (en) 1993-10-26 1996-08-20 Tessera, Inc. Semiconductor chip connection components with adhesives and methods for bonding to the chip
US6071795A (en) * 1998-01-23 2000-06-06 The Regents Of The University Of California Separation of thin films from transparent substrates by selective optical processing
US6159827A (en) * 1998-04-13 2000-12-12 Mitsui Chemicals, Inc. Preparation process of semiconductor wafer
US6393759B1 (en) * 2000-01-21 2002-05-28 Jeffrey K. Brown Electronic fly trap apparatus with cover
KR100404229B1 (ko) * 2001-02-06 2003-11-03 앰코 테크놀로지 코리아 주식회사 반도체 칩 제조방법
KR20030038048A (ko) * 2001-11-08 2003-05-16 삼성전자주식회사 웨이퍼 이면 연마를 위한 라미네이터 장비 및 그 운용방법
JP4312419B2 (ja) 2002-05-09 2009-08-12 リンテック株式会社 半導体ウエハの加工方法
US6923881B2 (en) * 2002-05-27 2005-08-02 Fuji Photo Film Co., Ltd. Method for producing organic electroluminescent device and transfer material used therein
JP2004043814A (ja) 2002-07-15 2004-02-12 Dow Corning Toray Silicone Co Ltd シリコーン系接着性シート、半導体チップと該チップ取付部の接着方法、および半導体装置
DE10353530A1 (de) 2003-11-14 2005-06-23 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Wafer mit Deckschicht und Trennschicht, Verfahren zur Herstellung eines solchen Wafers sowie Verfahren zum Dünnen bzw. Rückseitenmetallisieren eines Wafers
AU2003299296A1 (en) * 2002-11-29 2004-06-23 Fraunhofer-Gesellschaft Zur Forderung Der Angewandten Forschung E.V. Method and device for machining a wafer, in addition to a wafer comprising a separation layer and a support layer
JP4364535B2 (ja) * 2003-03-27 2009-11-18 シャープ株式会社 半導体装置の製造方法
JP2005019435A (ja) * 2003-06-23 2005-01-20 Sharp Corp ウェハ研磨方法
JP4566527B2 (ja) 2003-08-08 2010-10-20 日東電工株式会社 再剥離型粘着シート
JP3935133B2 (ja) * 2003-11-07 2007-06-20 本田技研工業株式会社 重畳部の形成方法
KR100601797B1 (ko) * 2003-12-02 2006-07-14 도레이새한 주식회사 실리콘 이형 폴리에스테르 필름
JP4716668B2 (ja) 2004-04-21 2011-07-06 日東電工株式会社 被着物の加熱剥離方法及び被着物加熱剥離装置
JP2006032488A (ja) * 2004-07-13 2006-02-02 Shin Etsu Polymer Co Ltd 電子部品保持具及びその使用方法
US8040469B2 (en) * 2004-09-10 2011-10-18 Semiconductor Energy Laboratory Co., Ltd. Display device, method for manufacturing the same and apparatus for manufacturing the same

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WO2022114112A1 (ja) 2020-11-30 2022-06-02 日産化学株式会社 積層体、積層体の製造方法、及び半導体基板の製造方法
KR20230112633A (ko) 2020-11-30 2023-07-27 닛산 가가쿠 가부시키가이샤 적층체, 적층체의 제조 방법, 및 반도체 기판의 제조 방법
WO2022202029A1 (ja) 2021-03-26 2022-09-29 日産化学株式会社 積層体、積層体の製造方法、及び半導体基板の製造方法
KR20230162939A (ko) 2021-03-26 2023-11-29 닛산 가가쿠 가부시키가이샤 적층체, 적층체의 제조 방법, 및 반도체 기판의 제조 방법

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US8911583B2 (en) 2014-12-16
WO2007099146A1 (de) 2007-09-07
EP1994554A1 (de) 2008-11-26
KR101458143B1 (ko) 2014-11-05
US20100043608A1 (en) 2010-02-25

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