JP5332775B2 - Electronic component and manufacturing method thereof - Google Patents

Description

  The present invention relates to an electronic component in which a semiconductor element is mounted on a circuit board and a manufacturing method thereof.

  Currently, the demand for high-density mounting of electronic components is increasing year by year, and the bare chip mounting method is attracting attention. Further, the connection method in the bare chip mounting has been changed from the face-up mounting by the wire bonding method to the face-down mounting in which the protruding terminals formed on the electrodes of the semiconductor element are directly connected to the circuit board. Face-down mounting can shorten the distance between connection terminals compared to wire bonding, so connection with multiple terminals can be easily realized, and connections with excellent electrical characteristics such as high-capacity signals can be transmitted at high speed. It is a method.

  In face-down mounting, after connecting to a circuit board using a protruding terminal formed on a semiconductor element, an underfill adhesive is filled between the semiconductor element and the circuit board to disperse the stress applied to the protruding electrode. Is generally adopted.

JP 2001-177052 A JP 2002-141633 A JP 2007-311700 A

  As described above, the semiconductor element is mounted on the circuit board via the underfill adhesive, and the thermal expansion difference between the semiconductor element and the circuit board causes distortion, warpage, and the like. Particularly in recent years, the density of copper wiring in circuit boards has increased in the trend of higher functionality, higher density, and lower costs. Since the thermal expansion coefficient of copper is as high as 17 ppm / ° C., the thermal expansion coefficient of the circuit board also tends to be larger than that of the semiconductor element of 4 ppm / ° C.

  Such a situation not only makes it difficult to maintain the contact connection, but also causes great stress in the actual operating environment, which may lead to deterioration such as cracking of the semiconductor element and destruction of the joint, and reliability is improved. It was difficult to fully satisfy.

  An object of the present invention is to provide an electronic component that can effectively relieve stress applied from a circuit board to a semiconductor element while maintaining contact connection between the circuit board and the semiconductor element, and a method for manufacturing the same. .

According to one embodiment of the present invention, there is provided a first substrate and a second substrate formed on the first substrate and electrically connected to the first substrate through a protruding terminal. The protruding terminal is bonded to the second substrate, and the first linear structure body of carbon element having a conductive film selectively formed at an end portion on the first substrate side. A bundle and a bundle of carbon element second linear structures having a conductive film bonded to the first substrate and selectively formed at an end portion on the second substrate side, An electronic component in which the first substrate and the second substrate are electrically connected to each other when the bundle of the first linear structures and the bundle of the second linear structures are engaged with each other. Is provided.

According to another aspect of the embodiment, a step of forming a first protruding terminal of a bundle of linear structures of carbon elements on a first substrate, and a tip of the first protruding terminal A step of selectively forming a conductive first film on a portion, a step of forming a second protruding terminal of a bundle of linear structures of carbon elements on a second substrate, A step of selectively forming a conductive second film on the tip of each of the two protruding terminals, mounting the second substrate on the first substrate, and There is provided an electronic component manufacturing method including a step of electrically connecting the first substrate and the second substrate by meshing with the second protruding terminal.

  According to the disclosed electronic component and the method of manufacturing the same, the protruding terminals of the bundle of carbon element linear structures having a coating formed on the tip portion are abutted and contact-bonded, so that the inner surface of the carbon element linear structure And the surface can be used as a current path. As a result, it is possible to realize a low-resistance bonded body that is about an order of magnitude lower than that in the case of a protruding terminal having only a carbon element linear structure. Further, since the protruding terminals of the bundle of linear structures can be engaged with each other by pressing with a low load, it is possible to prevent the linear structures from being short-circuited with the adjacent terminals due to excessive bending. Moreover, since the state in which the protruding terminals are engaged with each other is maintained, it is possible to prevent the positional deviation from occurring after the contact bonding.

FIG. 1 is a schematic cross-sectional view showing the structure of an electronic component according to an embodiment. FIG. 2 is a schematic diagram illustrating an example of a structure of a protruding terminal in an electronic component according to an embodiment. FIG. 3 is a schematic diagram illustrating an example of a connection state of the protruding terminals in the electronic component according to the embodiment. FIG. 4 is a process cross-sectional view (part 1) illustrating the method of manufacturing the electronic component according to the embodiment. FIG. 5 is a process cross-sectional view (part 2) illustrating the method of manufacturing the electronic component according to the embodiment. FIG. 6 is a process cross-sectional view (part 3) illustrating the method for manufacturing the electronic component according to the embodiment.

  An electronic component and a manufacturing method thereof according to an embodiment will be described with reference to FIGS.

  FIG. 1 is a schematic cross-sectional view showing the structure of the electronic component according to the present embodiment. FIG. 2 is a schematic view showing an example of the structure of the protruding terminals in the electronic component according to the present embodiment. FIG. 3 is a schematic diagram illustrating an example of a connection state of the protruding terminals in the electronic component according to the present embodiment. 4 to 6 are process cross-sectional views illustrating the method of manufacturing the electronic component according to the present embodiment.

  First, the structure of the electronic component according to the present embodiment will be described with reference to FIGS.

  A semiconductor element 10 is mounted on the circuit board 30. On the circuit board 30, a connection electrode 32 for electrical connection between a predetermined wiring pattern (not shown) and the semiconductor element 10 is formed. The semiconductor element 10 includes a substrate 12 on which a large number of transistors and other elements and a multilayer wiring layer (not shown) are formed, and a pad electrode 14 that is an external connection terminal. The pad electrode 14 of the semiconductor element 10 is electrically connected to the connection electrode 32 of the circuit board 30 by the protruding terminals 20 and 34 formed by a bundle of carbon nanotubes. The semiconductor element 10 is supported by a frame body 38 and fixed to the circuit board 30 by an adhesive 40.

  For example, as shown in FIG. 2, the protruding terminal 20 formed on the pad electrode 14 of the semiconductor element 10 has a carbon nanotube 20a oriented in the vertical direction and a coating 22 formed at the tip of the carbon nanotube 20a. doing. Similarly, the projecting terminal 34 formed on the connection electrode 32 of the circuit board 30 has a carbon nanotube 34a oriented in the vertical direction and a coating 36 formed on the end of the carbon nanotube 34a. For example, as shown in FIG. 3, the protruding terminals 20 and the protruding terminals 34 are arranged so that the carbon nanotubes 20a and the carbon nanotubes 36a mesh with each other at the end portions where the coatings 22 and 36 are formed. The electrical connection is made.

  As described above, in the electronic component according to the present embodiment, the protruding terminals 20 and 34 that connect the circuit board 30 and the semiconductor element 10 are formed by a bundle of carbon nanotubes 20a and 34a having the coatings 22 and 36 at the tip portions. ing. Then, the end portion of the protruding terminal 20 and the end portion of the protruding terminal 34 are engaged with each other, whereby the pad electrode 14 and the connection electrode 32 are electrically connected.

  Since the carbon nanotubes forming the protruding terminals 20 and 34 have a low resistance, a large current can flow. Further, since the carbon nanotube has high elasticity (spring property), the connection can be maintained by contact connection such as a connector. Furthermore, this contact connection also has an effect that the stress caused by the difference in thermal expansion coefficient between the circuit board 30 and the semiconductor element 10 can be absorbed by the deformation of the carbon nanotubes.

  In general face-down mounting, the circuit board and the semiconductor element are connected to each other with a protruding terminal, and then a sealant called underfill is filled in the gap between the circuit board and the semiconductor element to apply stress to the protruding terminal. Is distributed. However, when a similar method is used even when a carbon nanotube bundle is used as the protruding terminal, the effect of the carbon nanotubes may be hindered by the underfill sealant.

  In other words, when a bundle of carbon nanotubes is used as the projecting terminal, if the underfill is filled / cured, the carbon nanotubes get wet with the underfill sealant and are fixed by curing, so that the spring property expected for the carbon nanotubes Will be damaged. Moreover, when the space | interval between carbon nanotubes is large, an underfill will penetrate | invade between carbon nanotubes, and spring property will fall further.

  As another mounting method using carbon nanotubes, a method of fixing the periphery of the semiconductor element with a structure after mounting the semiconductor element on a circuit board is also conceivable. However, it is very difficult to fix without positioning after positioning. In addition, because of contact contact, a sufficient contact area cannot be secured due to misalignment or insufficient pressurization in the fixing process, contact resistance is greater than an electrical resistance compared to metal bonding, etc. There is a possibility that the electric resistance becomes high for the reason. Although it is possible to reduce the connection resistance by pressing under load, in joining with a narrow pitch of about 100 μm, there is a risk of shorting with an adjacent terminal due to excessive flexibility of the carbon nanotubes.

  In this regard, in the electronic component according to the present embodiment, the circuit board 30 and the semiconductor element 10 are electrically connected by the protruding terminals 20 and 34 formed by a bundle of carbon nanotubes. The underfill adhesive is not filled between the circuit board 30 and the semiconductor element 10. Therefore, even when a bundle of carbon nanotubes is used as the protruding terminals 20 and 34, the spring properties of the carbon nanotubes are not impaired. The end portions of the protruding terminals 20 and the end portions of the protruding terminals 34 are engaged with each other, so that it is possible to prevent the positional deviation from occurring after the semiconductor element 10 is placed on the circuit board 30.

  Further, the end of the protruding terminal 20 and the end of the protruding terminal 34 are engaged with each other, whereby the carbon nanotube 20 a is connected to the carbon nanotube 34 a and / or the coating 36 directly or indirectly through the coating 22. be able to. Similarly, the carbon nanotubes 34 a can be connected to the carbon nanotubes 20 a and / or the coating 22 directly or indirectly through the coating 26. Therefore, the contact area between the projecting terminal 20 and the projecting terminal 34 can be increased as compared with the case where a film is not formed at the end of the carbon nanotube. Carbon nanotubes are said to have a current path on the inner surface of the tube, but a current path can also be formed on the outer surface of the carbon nanotube by forming a coating. Thereby, combined with the effect of increasing the contact area, the connection resistance between the protruding terminal 20 and the protruding terminal 34 can be reduced.

  Further, since the connection resistance can be reduced without applying an excessive load between the semiconductor element 10 and the circuit board 30, it is possible to prevent the carbon nanotubes from being excessively bent and to short between adjacent terminals in a narrow pitch junction. Can be prevented.

  Therefore, by forming such an electronic component, mechanical stress and thermal stress applied between the semiconductor element 10 and the circuit board 30 are more effective by the protruding terminals 22 of the carbon nanotube bundle in which the spring property is maintained. Can be absorbed. Further, since the end of the protruding terminal 20 and the end of the protruding terminal 34 are engaged with each other, positional displacement between the protruding terminal 20 and the protruding terminal 34 can be prevented and connection resistance can be reduced. it can. Thereby, a good contact connection between the semiconductor element 10 and the circuit board 30 can be maintained, and the operation of the semiconductor element 10 can be ensured for a long period of time.

  Next, the method for manufacturing the electronic component according to the present embodiment will be described with reference to FIGS.

  The semiconductor element 10 is not particularly limited. For example, as shown in FIG. 4A, the semiconductor element 10 is formed on a substrate 12, a pad electrode 14 formed on the uppermost layer, and the substrate 12 and the pad electrode 14. And the formed passivation film 16. A large number of transistors and other elements and a multilayer wiring layer (not shown) are formed on the substrate 12. In the passivation film 16, an opening for exposing the pad electrode 14 is formed.

  A connection layer 18 of an adhesive containing solder or conductive fine particles is formed on the pad electrode 14 of the semiconductor element 10 (FIG. 4B).

  Next, an Al (aluminum) film having a thickness of, for example, 5 nm and an Fe (iron) film having a thickness of, for example, 2 nm are formed on a substrate different from the semiconductor element 10, for example, a silicon substrate (not shown) by, for example, sputtering. To form a catalytic metal film. As the catalyst metal, other materials than Fe may be used. For example, a catalyst containing a transition metal such as Ni (nickel) or Co (cobalt) may be used. These catalysts may be in the form of a thin film or fine particles. Further, a catalyst may be contained in a support material such as zeolite, or a self-organized arrangement of proteins such as ferritin containing a metal element serving as a catalyst may be utilized.

  Next, using this catalytic metal film as a catalyst, carbon nanotubes are grown by, for example, CVD. The growth of the carbon nanotubes is performed using, for example, a hydrocarbon gas such as acetylene or methane as a source gas, an alcohol source material such as ethanol or methanol, and an argon gas or hydrogen gas as a carrier gas. It can be grown at a growth temperature of 700 ° C., for example 600 ° C. The length of the carbon nanotube can be arbitrarily controlled by the growth time.

  Next, the carbon nanotubes grown on the silicon substrate are pressed onto the pad electrode 14 of the semiconductor element 10 on which the connection layer 18 is formed, and fixed on the pad electrode 14 with the solder or the adhesive.

  Next, the bundle of carbon nanotubes can be selectively transferred onto the pad electrode 14 by removing the silicon substrate.

  Thus, the protruding terminals 20 of the bundle of carbon nanotubes are formed on the pad electrode 14 of the semiconductor element 10 (FIG. 4C).

The diameter, planar density, and length of the carbon nanotubes forming the protruding terminals 20 can be controlled by the growth conditions of the carbon nanotubes grown on the silicon substrate. Here, a bundle of carbon nanotubes having a diameter of 5 nm to 10 nm, a planar density of 1 × 10 ¹¹ pieces / cm ² , and a length of 100 to 120 μm is formed as the protruding terminals 20. However, the bundle of carbon nanotubes forming the protruding terminals 20 is not limited to this.

  Next, an Au (gold) film 22 having a film thickness of, for example, about 50 to 100 nm is formed on the protruding terminals 20 thus formed by, for example, a lift-off method (FIG. 4D). The coating film 22 has a thickness such that the gap between the carbon nanotubes is not completely filled with the coating film. From this point of view, it is desirable that the film thickness is about half or less of the interval between the carbon nanotubes forming the protruding terminals 20.

For example, when carbon nanotubes are grown at a plane density of about 1 × 10 ¹¹ pieces / cm ² , the interval between the carbon nanotubes is about 30 nm. In this case, in order to prevent the gap between the carbon nanotubes from being completely filled with the coating, it is desirable that the thickness of the coating is about 15 nm or less.

When carbon nanotubes are grown at a plane density of about 5 × 10 ¹⁰ pieces / cm ² , the interval between the carbon nanotubes is about 50 nm. When carbon nanotubes are grown at a plane density of about 1 × 10 ¹⁰ pieces / cm ² , the interval between the carbon nanotubes is about 100 nm.

  For example, as shown in FIG. 2, the coating 22 formed on the protruding terminals 20 is formed so as to cover the upper end portion of the carbon nanotube 20 a. FIG. 2 shows the case where the coating 22 is formed so as to cover the ends of the respective carbon nanotubes 20a. However, the coating 22 is formed so as to bundle the ends of the plurality of carbon nanotubes 20a. Also good.

  The coating 22 is not particularly limited as long as it is a conductive material, and for example, a metal, an alloy, or the like can be applied. As a constituent material of the film 22, for example, gold (Au), copper (Cu), nickel (Ni), silver (Ag), or the like can be used. Further, the coating film 22 does not have to have a single layer structure, and may have a laminated structure of two layers or three or more layers such as a laminated structure of titanium (Ti) and gold (Au).

  On the other hand, on the circuit board 30 on which the semiconductor element 10 is mounted, connection electrodes 32 for connecting the protruding terminals 22 of the semiconductor element 10 are formed (FIG. 5A).

On the connection terminal 32 of the circuit board 30, a protruding terminal 34 of a bundle of carbon nanotubes is formed in the same manner as the method of forming the protruding terminal 20 (FIG. 5B). Here, a bundle of carbon nanotubes having a diameter of 5 nm to 10 nm, a plane density of 5 × 10 ¹⁰ pieces / cm ² , and a length of 50 to 70 μm is formed as the protruding terminals 34. However, the bundle of carbon nanotubes forming the protruding terminals 34 is not limited to this.

  Next, an Au (gold) film 36 having a film thickness of, for example, about 50 to 100 nm is formed on the protruding terminals 34 in the same manner as the method for forming the film 22 (FIG. 5C). The coating 36 has a thickness that does not completely fill the gap between the carbon nanotubes with the coating. From this point of view, it is desirable that the film 36 has a film thickness that is about half or less of the interval between the carbon nanotubes that form the protruding terminals 34.

  The connection resistance between the semiconductor element 10 and the circuit board 30 is the relationship between the diameter and planar density of the carbon nanotubes 20a and the film thickness of the coating film 22 and the diameter and planar density of the carbon nanotubes 34a and the film thickness of the coating film 36. (Refer to the examples described later). The diameter, planar density, and film thickness of the coating 22 of the carbon nanotubes 20a, and the diameter, planar density, and coating film 36 of the carbon nanotubes 34a are required for the connection between the semiconductor element 10 and the circuit board 30. It is desirable to set appropriately according to the connection resistance.

  Next, a frame 38 for fixing the semiconductor element 10 to the circuit board 30 when mounting the semiconductor element 10 is formed on the circuit board 30 (FIG. 5D).

  Next, the semiconductor element 10 on which the protruding terminals 20 are formed on the circuit board 30 is aligned so that the protruding terminals 20 of the semiconductor element 10 and the protruding terminals 34 of the circuit board 30 face each other, for example, 0.6 MPa. The semiconductor element 10 is pressed against the circuit board 30 with the pressure (FIG. 6A to FIG. 6B).

  As a result, the carbon nanotubes 20a of the protruding terminals 20 and the carbon nanotubes 34a of the protruding terminals 34 mesh with each other, and the protruding terminals 20 and the protruding terminals 34 are electrically connected.

  At this time, since the coating 22 is formed on the end of the carbon nanotube 20a of the protruding terminal 20 and the coating 36 is formed on the end of the carbon nanotube 34a of the protruding terminal 34, the protruding terminal 20 and the protruding terminal are formed. It is possible to increase the area of contact with 34 (see FIG. 3). Thereby, compared with the case where the coating films 22 and 36 are not formed, the contact resistance between the protruding terminal 20 and the protruding terminal 34 can be reduced.

  Further, since the carbon nanotube is a material having elasticity, it is added between the semiconductor element 10 and the circuit board 30 when the semiconductor element 10 is pressed against the circuit board 30 or when thermal stress is applied between the semiconductor element 10 and the circuit board 30. It has the effect of relieving stress and maintaining contact connection. Further, the engagement of the carbon nanotubes 20a of the projecting terminals 20 and the carbon nanotubes 34a of the projecting terminals 34 has an effect of preventing a positional shift after the semiconductor element 10 is mounted.

  Next, in a state where the semiconductor element 10 is pressed against the circuit board 30 to apply a biasing force to the carbon nanotubes 20a and 34a of the protruding terminals 20 and 34, for example, an epoxy resin or a cyanate ester resin is provided on the outer peripheral portion of the semiconductor element 10. The adhesive 40 is applied and adhered to the frame 38. Thereby, the semiconductor element 10 is fixed on the circuit board 30 (FIG. 6C).

  Thus, the electronic component according to the present embodiment is completed.

  As described above, according to the present embodiment, the protruding terminals of the bundle of carbon nanotubes having a coating formed at the tip are abutted and contact-bonded, so that the inner surface and the surface of the carbon nanotube can be used as a current path. . As a result, it is possible to realize a low-resistance bonded body that is about an order of magnitude lower than that in the case of a protruding terminal made of only carbon nanotubes. Further, since the protruding terminals of the bundle of carbon nanotubes can be engaged with each other by pressing with a low load, it is possible to prevent the carbon nanotubes from being excessively bent and short-circuited with the adjacent terminals. Moreover, since the state in which the protruding terminals are engaged with each other is maintained, it is possible to prevent the positional deviation from occurring after the contact bonding.

[Modified Embodiment]
The present invention is not limited to the above embodiment, and various modifications are possible.

  For example, in the above-described embodiment, the case where the coating 22 and the coating 36 are in direct contact with each other is shown in a state where the protruding terminals 20 and the protruding terminals 34 are engaged with each other (see FIG. 3). And the coating 36 are not necessarily in contact with each other. For example, even when the protruding terminals 20 and the protruding terminals 34 are deeply engaged with each other and the coating 22 and the coating 36 are not in direct contact with each other, there is an effect of reducing the connection resistance.

  In the above embodiment, the adhesive 40 is used as a structure for fixing the semiconductor element 10 on the circuit board 30. However, the semiconductor element 10 is not necessarily fixed by a side fill such as the adhesive 40. For example, a heat spreader or other sealing structure may be provided on the back side of the semiconductor element 10 and fixed on the circuit board 30 by this sealing structure.

  Moreover, in the said embodiment, although the protruding terminals 20 and 34 were formed with the carbon nanotube, the protruding terminals 20 and 34 are not limited to this. Examples of the conductive member having elasticity similar to that of carbon nanotubes include linear structures of carbon elements other than carbon nanotubes. Examples of the carbon element linear structure include carbon nanowires, carbon rods, and carbon fibers in addition to carbon nanotubes. These linear structures are the same as the carbon nanotubes except that their sizes are different.

  Moreover, in the said embodiment, although the application example to the electrical connection between a semiconductor element and a circuit board was shown, when connecting not only the connection of a semiconductor element and a circuit board but two boards | substrates Can be widely applied to.

  Using the electronic component manufacturing method according to the above-described embodiment, an electronic component was manufactured under the following conditions.

[Example 1]
On the pad electrode 14 of the semiconductor element 10, a protruding terminal 20 of a bundle of carbon nanotubes having a diameter of 80 μm, a planar density of 1 × 10 ¹⁰ pieces / cm ² , and a length of 120 μm was formed. Further, an Au coating 22 having a film thickness of 70 nm was formed on the protruding terminals 20.

On the connection electrode 32 of the circuit board 30, a protruding terminal 34 of a bundle of carbon nanotubes having a diameter of 120 μm, a planar density of 1 × 10 ¹¹ pieces / cm ² , and a length of 50 μm was formed. An Au coating 36 having a film thickness of 70 nm was formed on the protruding terminals 34.

  Next, the semiconductor element 10 was aligned on the circuit board 30 and butt-joined with a load of 0.6 MPa.

  Next, a side fill material of epoxy resin was applied so as to fix the semiconductor element 10 and the circuit board 30, and heat treatment was performed at 150 ° C. for 30 minutes to fix the semiconductor element 10 on the circuit board 30.

[Example 2]
An electronic component was manufactured under the same conditions as in Example 1 except that the planar density of the carbon nanotubes of the protruding terminals 20 formed on the semiconductor element 10 was 5 × 10 ¹⁰ pieces / cm ² .

[Example 3]
An electronic component was manufactured under the same conditions as in Example 1 except that the planar density of the carbon nanotubes of the protruding terminals 20 formed on the semiconductor element 10 was 1 × 10 ¹¹ pieces / cm ² .

[Comparative example]
For comparison, an electronic component on which the semiconductor element 10 was mounted without forming the protruding terminals 34 on the circuit board 30 was also produced. The planar density of the carbon nanotubes of the protruding terminals 20 formed on the semiconductor element 10 was set to 5 × 10 ¹⁰ pieces / cm ² and the protruding terminals 34 were not formed under the same conditions as in Example 1. Electronic components were manufactured.

  It was confirmed that there was no problem in the electrical connection between the semiconductor element and the circuit board for the four types of electronic components thus produced. The resistance value between the semiconductor element and the circuit board is 10.5Ω for the electronic component of the comparative example, whereas the electronic components of Examples 1 to 3 are 0.75Ω, 0.5Ω, and 8.5Ω, respectively. Met. Although the connection resistance was higher in the electronic component of Example 3, all of them were lower in resistance than the electronic component of the comparative example. The reason why the connection resistance is high in the electronic component of Example 3 is not clear, but it is considered that the carbon nanotubes of the protruding terminals 20 and 34 were not dense enough to be engaged because of high density.

  As a result of performing 500 cycles of the repeated temperature cycle test at −25 to 125 ° C. for the electronic components of Examples 1 to 3, the resistance increase was as good as 10% or less. Further, even after being left in an environment of 121 ° C./85% for 1000 hours, the resistance increase was as good as 10% or less as in the cycle test.

DESCRIPTION OF SYMBOLS 10 ... Semiconductor element 12 ... Board | substrate 14 ... Pad electrode 16 ... Passivation film 18 ... Connection layer 20, 34 ... Projection terminal 20a, 34a ... Carbon nanotube 22, 36 ... Film 30 ... Circuit board 32 ... Connection electrode 38 ... Frame 40 …adhesive

Claims (5)

A first substrate;
A second substrate formed on the first substrate and electrically connected to the first substrate via a protruding terminal;
The protruding terminal is bonded to the second substrate, and a bundle of first linear structures of carbon elements having a conductive film selectively formed at an end portion on the first substrate side, and A bundle of carbon element second linear structures having a conductive coating bonded to the first substrate and selectively formed at an end portion on the second substrate side,
The first substrate and the second substrate are electrically connected to each other when the bundle of the first linear structures and the bundle of the second linear structures are engaged with each other. Features electronic components. The electronic component according to claim 1 Symbol placement,
The electronic component further comprising: a structure for fixing the second substrate to the first substrate. The electronic component according to claim 1 or 2 ,
The first substrate is a circuit board;
The electronic component, wherein the second substrate is a semiconductor element. Forming a first protruding terminal of a bundle of linear structures of carbon elements on a first substrate;
Selectively forming a conductive first film on the tip of the first protruding terminal;
Forming a second protruding terminal of a bundle of carbon element linear structures on a second substrate;
Selectively forming a conductive second coating on the tip of the second protruding terminal;
By mounting the second substrate on the first substrate and engaging the first protruding terminal and the second protruding terminal, the first substrate and the second substrate And a step of electrically connecting the electronic component and the electronic component manufacturing method. In the manufacturing method of the electronic component of Claim 4 ,
The method of manufacturing an electronic component, further comprising a step of fixing the second substrate to the first substrate after the step of electrically connecting the first substrate and the second substrate. .

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