JP5322418B2 - レーザ加工方法及びレーザ加工装置 - Google Patents

レーザ加工方法及びレーザ加工装置 Download PDF

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Publication number
JP5322418B2
JP5322418B2 JP2007242846A JP2007242846A JP5322418B2 JP 5322418 B2 JP5322418 B2 JP 5322418B2 JP 2007242846 A JP2007242846 A JP 2007242846A JP 2007242846 A JP2007242846 A JP 2007242846A JP 5322418 B2 JP5322418 B2 JP 5322418B2
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laser light
workpiece
region
laser
processing method
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Japanese (ja)
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JP2008100284A (ja
JP2008100284A5 (enrdf_load_stackoverflow
Inventor
剛志 坂本
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Hamamatsu Photonics KK
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Hamamatsu Photonics KK
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Priority to JP2007242846A priority Critical patent/JP5322418B2/ja
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Publication of JP2008100284A5 publication Critical patent/JP2008100284A5/ja
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/009—Working by laser beam, e.g. welding, cutting or boring using a non-absorbing, e.g. transparent, reflective or refractive, layer on the workpiece

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Processing Of Stones Or Stones Resemblance Materials (AREA)
  • Laser Beam Processing (AREA)
  • Dicing (AREA)
JP2007242846A 2006-09-19 2007-09-19 レーザ加工方法及びレーザ加工装置 Active JP5322418B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2007242846A JP5322418B2 (ja) 2006-09-19 2007-09-19 レーザ加工方法及びレーザ加工装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2006253259 2006-09-19
JP2006253259 2006-09-19
JP2007242846A JP5322418B2 (ja) 2006-09-19 2007-09-19 レーザ加工方法及びレーザ加工装置

Publications (3)

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JP2008100284A JP2008100284A (ja) 2008-05-01
JP2008100284A5 JP2008100284A5 (enrdf_load_stackoverflow) 2009-07-23
JP5322418B2 true JP5322418B2 (ja) 2013-10-23

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JP (1) JP5322418B2 (enrdf_load_stackoverflow)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10562130B1 (en) 2018-12-29 2020-02-18 Cree, Inc. Laser-assisted method for parting crystalline material
US10576585B1 (en) 2018-12-29 2020-03-03 Cree, Inc. Laser-assisted method for parting crystalline material
US10611052B1 (en) 2019-05-17 2020-04-07 Cree, Inc. Silicon carbide wafers with relaxed positive bow and related methods
US11024501B2 (en) 2018-12-29 2021-06-01 Cree, Inc. Carrier-assisted method for parting crystalline material along laser damage region

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5491761B2 (ja) * 2009-04-20 2014-05-14 浜松ホトニクス株式会社 レーザ加工装置
RU2013102422A (ru) * 2010-07-12 2014-08-20 ФАЙЛЭЙСЕР ЮЭс-Эй ЭлЭлСи Способ обработки материалов с использованием филаментации
JP5658043B2 (ja) * 2011-01-07 2015-01-21 株式会社ディスコ 分割方法
JP2012238746A (ja) 2011-05-12 2012-12-06 Disco Abrasive Syst Ltd 光デバイスウエーハの分割方法
JP2014082317A (ja) * 2012-10-16 2014-05-08 Disco Abrasive Syst Ltd ウエーハの加工方法
JP6189066B2 (ja) * 2013-03-27 2017-08-30 株式会社ディスコ ウエーハの加工方法
CN112518141B (zh) * 2020-11-24 2022-07-15 无锡光导精密科技有限公司 一种激光诱导切割方法及装置

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3626442B2 (ja) * 2000-09-13 2005-03-09 浜松ホトニクス株式会社 レーザ加工方法
JP4424302B2 (ja) * 2005-11-16 2010-03-03 株式会社デンソー 半導体チップの製造方法

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10562130B1 (en) 2018-12-29 2020-02-18 Cree, Inc. Laser-assisted method for parting crystalline material
US10576585B1 (en) 2018-12-29 2020-03-03 Cree, Inc. Laser-assisted method for parting crystalline material
US11024501B2 (en) 2018-12-29 2021-06-01 Cree, Inc. Carrier-assisted method for parting crystalline material along laser damage region
US11219966B1 (en) 2018-12-29 2022-01-11 Wolfspeed, Inc. Laser-assisted method for parting crystalline material
US11826846B2 (en) 2018-12-29 2023-11-28 Wolfspeed, Inc. Laser-assisted method for parting crystalline material
US11901181B2 (en) 2018-12-29 2024-02-13 Wolfspeed, Inc. Carrier-assisted method for parting crystalline material along laser damage region
US11911842B2 (en) 2018-12-29 2024-02-27 Wolfspeed, Inc. Laser-assisted method for parting crystalline material
US10611052B1 (en) 2019-05-17 2020-04-07 Cree, Inc. Silicon carbide wafers with relaxed positive bow and related methods
US11034056B2 (en) 2019-05-17 2021-06-15 Cree, Inc. Silicon carbide wafers with relaxed positive bow and related methods
US11654596B2 (en) 2019-05-17 2023-05-23 Wolfspeed, Inc. Silicon carbide wafers with relaxed positive bow and related methods
US12070875B2 (en) 2019-05-17 2024-08-27 Wolfspeed, Inc. Silicon carbide wafers with relaxed positive bow and related methods

Also Published As

Publication number Publication date
JP2008100284A (ja) 2008-05-01

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