JP5320100B2 - 酸化物カプセル化材料の水素化の強化方法 - Google Patents
酸化物カプセル化材料の水素化の強化方法 Download PDFInfo
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- JP5320100B2 JP5320100B2 JP2009035040A JP2009035040A JP5320100B2 JP 5320100 B2 JP5320100 B2 JP 5320100B2 JP 2009035040 A JP2009035040 A JP 2009035040A JP 2009035040 A JP2009035040 A JP 2009035040A JP 5320100 B2 JP5320100 B2 JP 5320100B2
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- Prior art keywords
- oxide
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- hydrogenation
- hydrogen
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- 238000005984 hydrogenation reaction Methods 0.000 title claims description 39
- 239000000463 material Substances 0.000 title claims description 32
- 238000000034 method Methods 0.000 title claims description 13
- 230000002708 enhancing effect Effects 0.000 title claims description 7
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 72
- 229910052739 hydrogen Inorganic materials 0.000 claims description 23
- 239000001257 hydrogen Substances 0.000 claims description 23
- 238000002347 injection Methods 0.000 claims description 23
- 239000007924 injection Substances 0.000 claims description 23
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 22
- YZCKVEUIGOORGS-UHFFFAOYSA-N Hydrogen atom Chemical compound [H] YZCKVEUIGOORGS-UHFFFAOYSA-N 0.000 claims description 7
- 229910052737 gold Inorganic materials 0.000 claims description 5
- 239000010410 layer Substances 0.000 description 76
- 239000010408 film Substances 0.000 description 42
- 239000010931 gold Substances 0.000 description 15
- 239000002184 metal Substances 0.000 description 15
- YZCKVEUIGOORGS-OUBTZVSYSA-N Deuterium Chemical compound [2H] YZCKVEUIGOORGS-OUBTZVSYSA-N 0.000 description 14
- 229910052805 deuterium Inorganic materials 0.000 description 14
- 229910052751 metal Inorganic materials 0.000 description 14
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 13
- 238000000576 coating method Methods 0.000 description 12
- 239000010409 thin film Substances 0.000 description 12
- 239000011248 coating agent Substances 0.000 description 11
- 229910021417 amorphous silicon Inorganic materials 0.000 description 8
- 230000007547 defect Effects 0.000 description 7
- 239000000758 substrate Substances 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 239000013068 control sample Substances 0.000 description 6
- 238000002310 reflectometry Methods 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 5
- 238000002161 passivation Methods 0.000 description 5
- 239000000523 sample Substances 0.000 description 5
- 229910052814 silicon oxide Inorganic materials 0.000 description 5
- 230000007704 transition Effects 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 3
- 239000007943 implant Substances 0.000 description 3
- 229910052697 platinum Inorganic materials 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 238000004347 surface barrier Methods 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 125000004429 atom Chemical group 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
- 239000008393 encapsulating agent Substances 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- 238000002513 implantation Methods 0.000 description 2
- 238000010348 incorporation Methods 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- DEXFNLNNUZKHNO-UHFFFAOYSA-N 6-[3-[4-[2-(2,3-dihydro-1H-inden-2-ylamino)pyrimidin-5-yl]piperidin-1-yl]-3-oxopropyl]-3H-1,3-benzoxazol-2-one Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)C1CCN(CC1)C(CCC1=CC2=C(NC(O2)=O)C=C1)=O DEXFNLNNUZKHNO-UHFFFAOYSA-N 0.000 description 1
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 1
- -1 ITO Chemical class 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 229910000040 hydrogen fluoride Inorganic materials 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/3003—Hydrogenation or deuterisation, e.g. using atomic hydrogen from a plasma
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/958—Passivation layer
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Plasma & Fusion (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Silicon Compounds (AREA)
- Thin Film Transistor (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
- Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
Description
実施例1
3.0μmLTO層を有するポリSi膜は5nmのAuで被覆される。Au注入層を有する酸化物被覆ポリSi膜と3.0μm厚のLTO層でカプセル化されたポリSi膜のコントロール例とは、350℃で180分間、光学的に分離された遠隔マイクロ波プラズマ中で発生された単原子重水素へ同時にさらされる。
5nmのPtは、3.0μm厚のLTO層で被覆されたポリSi膜上に付着される。ポリSi膜のコントロールサンプルは、媒介Pt層を用いずに3.0μm厚のLTO層で被覆される。両者のサンプルは、350℃で180分間、光学的に分離された遠隔プラズマ中で発生された単原子重水素へ同時にさらされる。金属注入層及びシリコン酸化物層はHFで除去され、下側のポリSi膜中のD濃度はSIMSで測定される。図2は、Pt注入層を有する酸化物カプセル化ポリSi膜及びコントロールサンプルの重水素濃度プロファイルを示す。
ポリSi膜の水素化に及ぼすアルミニウム(Al)注入(又は被覆)層の影響は図3に示される。7nmのAlは、0.1μm厚のLTO(シリコン酸化物)層で被覆されたポリSi膜上に付着される。比較のために、注入層を有さない酸化物カプセル化ポリSi膜のコントロールサンプルも準備される。
3.0μm厚のシリコン酸化物層でカプセル化されたトップゲートポリSi薄膜トランジスタ(「TFT」)チップは、5nmのAu及び7nmのa−Si:Hでそれぞれ被覆される。薄膜トランジスタは350℃で30分間水素化される。比較のために、注入層を有さない以外は同様のTFTチップのコントロールサンプルが準備される。
Claims (4)
- 酸化物でカプセル化された材料の水素化を強化するための方法であって、
Auを含む注入層を酸化物カプセル化材料上に形成するステップと、
前記材料を水素プラズマを含む原子水素源で水素化するステップと、
を含む、酸化物カプセル化材料の水素化の強化方法。 - 前記注入層の厚さが5nm〜7nmである、請求項1に記載の酸化物カプセル化材料の水素化の強化方法。
- 前記材料がGaN又は多結晶シリコンである、請求項1又は請求項2に記載の酸化物カプセル化材料の水素化の強化方法。
- 前記酸化物がSiO x (1≦x≦2)を含む、請求項1に記載の酸化物カプセル化材料の水素化の強化方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US723749 | 1996-09-30 | ||
US08/723,749 US5744202A (en) | 1996-09-30 | 1996-09-30 | Enhancement of hydrogenation of materials encapsulated by an oxide |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP9266852A Division JPH10120413A (ja) | 1996-09-30 | 1997-09-30 | 酸化物カプセル化材料の水素化の強化方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2009120482A JP2009120482A (ja) | 2009-06-04 |
JP5320100B2 true JP5320100B2 (ja) | 2013-10-23 |
Family
ID=24907508
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP9266852A Withdrawn JPH10120413A (ja) | 1996-09-30 | 1997-09-30 | 酸化物カプセル化材料の水素化の強化方法 |
JP2009035040A Expired - Lifetime JP5320100B2 (ja) | 1996-09-30 | 2009-02-18 | 酸化物カプセル化材料の水素化の強化方法 |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP9266852A Withdrawn JPH10120413A (ja) | 1996-09-30 | 1997-09-30 | 酸化物カプセル化材料の水素化の強化方法 |
Country Status (3)
Country | Link |
---|---|
US (1) | US5744202A (ja) |
EP (1) | EP0833377B1 (ja) |
JP (2) | JPH10120413A (ja) |
Families Citing this family (11)
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KR910003742B1 (ko) * | 1986-09-09 | 1991-06-10 | 세미콘덕터 에너지 라보라터리 캄파니 리미티드 | Cvd장치 |
US5872387A (en) * | 1996-01-16 | 1999-02-16 | The Board Of Trustees Of The University Of Illinois | Deuterium-treated semiconductor devices |
US5982020A (en) | 1997-04-28 | 1999-11-09 | Lucent Technologies Inc. | Deuterated bipolar transistor and method of manufacture thereof |
US6252270B1 (en) * | 1997-04-28 | 2001-06-26 | Agere Systems Guardian Corp. | Increased cycle specification for floating-gate and method of manufacture thereof |
US6057182A (en) * | 1997-09-05 | 2000-05-02 | Sarnoff Corporation | Hydrogenation of polysilicon thin film transistors |
US6143631A (en) * | 1998-05-04 | 2000-11-07 | Micron Technology, Inc. | Method for controlling the morphology of deposited silicon on a silicon dioxide substrate and semiconductor devices incorporating such deposited silicon |
US6028015A (en) * | 1999-03-29 | 2000-02-22 | Lsi Logic Corporation | Process for treating damaged surfaces of low dielectric constant organo silicon oxide insulation material to inhibit moisture absorption |
US6365511B1 (en) | 1999-06-03 | 2002-04-02 | Agere Systems Guardian Corp. | Tungsten silicide nitride as a barrier for high temperature anneals to improve hot carrier reliability |
US7226848B2 (en) * | 2001-12-26 | 2007-06-05 | Tokyo Electron Limited | Substrate treating method and production method for semiconductor device |
CN103985637B (zh) * | 2014-04-30 | 2017-02-01 | 京东方科技集团股份有限公司 | 低温多晶硅薄膜晶体管及其制作方法和显示装置 |
US9698339B1 (en) | 2015-12-29 | 2017-07-04 | International Business Machines Corporation | Magnetic tunnel junction encapsulation using hydrogenated amorphous semiconductor material |
Family Cites Families (23)
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US3442701A (en) * | 1965-05-19 | 1969-05-06 | Bell Telephone Labor Inc | Method of fabricating semiconductor contacts |
US3849204A (en) * | 1973-06-29 | 1974-11-19 | Ibm | Process for the elimination of interface states in mios structures |
US4359367A (en) * | 1980-06-25 | 1982-11-16 | Governing Council Of The University Of Toronto | Silicon-based semiconductor devices |
GB2140202A (en) * | 1983-05-16 | 1984-11-21 | Philips Electronic Associated | Methods of manufacturing semiconductor devices |
JPH0783031B2 (ja) * | 1984-03-08 | 1995-09-06 | 敏和 須田 | ▲ii▼−▲v▼族化合物半導体の薄膜又は結晶の製造方法 |
FR2604828B1 (fr) * | 1986-10-06 | 1988-12-23 | Centre Nat Rech Scient | Procede de fabrication d'une diode p+nn+ et d'un transistor bipolaire comportant cette diode, utilisant l'effet de neutralisation des atomes donneurs par l'hydrogene atomique |
US4857976A (en) * | 1987-06-30 | 1989-08-15 | California Institute Of Technology | Hydrogen-stabilized semiconductor devices |
US4960675A (en) * | 1988-08-08 | 1990-10-02 | Midwest Research Institute | Hydrogen ion microlithography |
FR2635611B1 (fr) * | 1988-08-18 | 1990-10-19 | Centre Nat Rech Scient | Procede de neutralisation des atomes accepteurs dans inp de type p |
JPH02187037A (ja) * | 1989-01-13 | 1990-07-23 | Ricoh Co Ltd | 半導体層の水素化処理方法 |
JP2770544B2 (ja) * | 1990-03-23 | 1998-07-02 | 松下電器産業株式会社 | Mis型半導体装置の製造方法 |
US5225366A (en) * | 1990-06-22 | 1993-07-06 | The United States Of America As Represented By The Secretary Of The Navy | Apparatus for and a method of growing thin films of elemental semiconductors |
KR930703707A (ko) * | 1991-01-30 | 1993-11-30 | 죤 죠셉 우르수 | 폴리실리콘 박막 트랜지스터 |
US5483096A (en) * | 1991-11-07 | 1996-01-09 | Seiko Instruments Inc. | Photo sensor |
US5194349A (en) * | 1992-02-07 | 1993-03-16 | Midwest Research Institute | Erasable, multiple level logic optical memory disk |
US5250444A (en) * | 1992-02-21 | 1993-10-05 | North American Philips Corporation | Rapid plasma hydrogenation process for polysilicon MOSFETs |
JPH05229966A (ja) * | 1992-02-25 | 1993-09-07 | Idemitsu Kosan Co Ltd | 水素化フラーレンの製造法 |
EP0634797B1 (en) * | 1993-07-13 | 1999-09-22 | Sony Corporation | Thin film semiconductor device for active matrix panel and method of manufacturing the same |
ZA946002B (en) * | 1993-08-12 | 1995-03-14 | De Beers Ind Diamond | Detecting ionising radiation |
JP3338182B2 (ja) * | 1994-02-28 | 2002-10-28 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
US5620906A (en) * | 1994-02-28 | 1997-04-15 | Semiconductor Energy Laboratory Co., Ltd. | Method for producing semiconductor device by introducing hydrogen ions |
JP3853395B2 (ja) * | 1994-03-27 | 2006-12-06 | 株式会社半導体エネルギー研究所 | 薄膜トランジスタの作製方法 |
US5616933A (en) * | 1995-10-16 | 1997-04-01 | Sony Corporation | Nitride encapsulated thin film transistor fabrication technique |
-
1996
- 1996-09-30 US US08/723,749 patent/US5744202A/en not_active Expired - Lifetime
-
1997
- 1997-09-22 EP EP97307393.5A patent/EP0833377B1/en not_active Expired - Lifetime
- 1997-09-30 JP JP9266852A patent/JPH10120413A/ja not_active Withdrawn
-
2009
- 2009-02-18 JP JP2009035040A patent/JP5320100B2/ja not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP0833377B1 (en) | 2016-01-13 |
JPH10120413A (ja) | 1998-05-12 |
EP0833377A2 (en) | 1998-04-01 |
EP0833377A3 (en) | 1999-08-18 |
JP2009120482A (ja) | 2009-06-04 |
US5744202A (en) | 1998-04-28 |
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