JP5317972B2 - 多重反射光学システム及びその製作 - Google Patents

多重反射光学システム及びその製作 Download PDF

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JP5317972B2
JP5317972B2 JP2009522158A JP2009522158A JP5317972B2 JP 5317972 B2 JP5317972 B2 JP 5317972B2 JP 2009522158 A JP2009522158 A JP 2009522158A JP 2009522158 A JP2009522158 A JP 2009522158A JP 5317972 B2 JP5317972 B2 JP 5317972B2
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mirror
radiation
radiation source
optical axis
reflection
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Japanese (ja)
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JP2009545181A (ja
JP2009545181A5 (enExample
Inventor
ファビオ ツォッキ
エンリコ ベネデッティ
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メディア ラリオ ソシエタ ア レスポンサビリタ リミタータ
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70233—Optical aspects of catoptric systems, i.e. comprising only reflective elements, e.g. extreme ultraviolet [EUV] projection systems
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/7015—Details of optical elements
    • G03F7/70166—Capillary or channel elements, e.g. nested extreme ultraviolet [EUV] mirrors or shells, optical fibers or light guides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/7015—Details of optical elements
    • G03F7/70175—Lamphouse reflector arrangements or collector mirrors, i.e. collecting light from solid angle upstream of the light source
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K1/00—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating
    • G21K1/06—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating using diffraction, refraction or reflection, e.g. monochromators
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B17/00—Systems with reflecting surfaces, with or without refracting elements
    • G02B17/02—Catoptric systems, e.g. image erecting and reversing system
    • G02B17/06—Catoptric systems, e.g. image erecting and reversing system using mirrors only, i.e. having only one curved mirror
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K2201/00—Arrangements for handling radiation or particles
    • G21K2201/06—Arrangements for handling radiation or particles using diffractive, refractive or reflecting elements
    • G21K2201/064—Arrangements for handling radiation or particles using diffractive, refractive or reflecting elements having a curved surface

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Theoretical Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Optical Elements Other Than Lenses (AREA)
JP2009522158A 2006-07-28 2007-07-30 多重反射光学システム及びその製作 Active JP5317972B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP06425539.1 2006-07-28
EP06425539A EP1882984B1 (en) 2006-07-28 2006-07-28 Multi-reflection optical systems and their fabrication
PCT/EP2007/006736 WO2008012111A1 (en) 2006-07-28 2007-07-30 Multi-reflection optical systems and their fabrication

Publications (3)

Publication Number Publication Date
JP2009545181A JP2009545181A (ja) 2009-12-17
JP2009545181A5 JP2009545181A5 (enExample) 2010-09-16
JP5317972B2 true JP5317972B2 (ja) 2013-10-16

Family

ID=37672423

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009522158A Active JP5317972B2 (ja) 2006-07-28 2007-07-30 多重反射光学システム及びその製作

Country Status (5)

Country Link
US (1) US20100091941A1 (enExample)
EP (2) EP1882984B1 (enExample)
JP (1) JP5317972B2 (enExample)
AT (1) ATE528692T1 (enExample)
WO (1) WO2008012111A1 (enExample)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1882984B1 (en) * 2006-07-28 2011-10-12 Media Lario s.r.l. Multi-reflection optical systems and their fabrication
EP2215527A2 (en) * 2007-11-22 2010-08-11 Philips Intellectual Property & Standards GmbH Method of increasing the operation lifetime of a collector optics arranged in an irradiation device and corresponding irradiation device
EP2083328B1 (en) 2008-01-28 2013-06-19 Media Lario s.r.l. Grazing incidence collector for laser produced plasma sources
US8050380B2 (en) * 2009-05-05 2011-11-01 Media Lario, S.R.L. Zone-optimized mirrors and optical systems using same
US8587768B2 (en) 2010-04-05 2013-11-19 Media Lario S.R.L. EUV collector system with enhanced EUV radiation collection
US8258485B2 (en) * 2010-08-30 2012-09-04 Media Lario Srl Source-collector module with GIC mirror and xenon liquid EUV LPP target system
DE102011080649A1 (de) * 2010-09-24 2012-03-29 Carl Zeiss Smt Gmbh Optische Anordnung in einer mikrolithographischen Projektionsbelichtungsanlage
US9377695B2 (en) 2011-02-24 2016-06-28 Asml Netherlands B.V. Grazing incidence reflectors, lithographic apparatus, methods for manufacturing a grazing incidence reflector and methods for manufacturing a device
NL2010274C2 (en) 2012-02-11 2015-02-26 Media Lario Srl Source-collector modules for euv lithography employing a gic mirror and a lpp source.
WO2013121418A1 (en) 2012-02-13 2013-08-22 Convergent R.N.R Ltd Imaging-guided delivery of x-ray radiation
DE102013204444A1 (de) * 2013-03-14 2014-09-18 Carl Zeiss Smt Gmbh Beleuchtungsoptik für ein Maskeninspektionssystem sowie Maskeninspektionssystem mit einer derartigen Beleuchtungsoptik
US20140376694A1 (en) * 2013-06-20 2014-12-25 Kabushiki Kaisha Toshiba Substrate measurement apparatus and substrate measurement method
DE102013107192A1 (de) 2013-07-08 2015-01-08 Carl Zeiss Laser Optics Gmbh Reflektives optisches Element für streifenden Einfall im EUV-Wellenlängenbereich
DE102013223935A1 (de) * 2013-11-22 2015-05-28 Carl Zeiss Smt Gmbh Beleuchtungssystem für die EUV-Belichtungslithographie
DE102014210609A1 (de) * 2014-06-04 2015-12-17 Carl Zeiss Smt Gmbh Optisches System, insbesondere für eine mikrolithographische Projektionsbelichtungsanlage
CN104835548B (zh) * 2015-03-18 2017-03-01 北京控制工程研究所 一种用于软x射线聚焦的抛物面型掠入射光学镜头
JP6586778B2 (ja) * 2015-05-28 2019-10-09 株式会社ニコン Ｘ線装置および構造物の製造方法
CN105760614B (zh) * 2016-03-02 2019-01-25 同济大学 一种圆锥-双曲嵌套式x射线天文望远镜结构的设计方法
KR102374206B1 (ko) 2017-12-05 2022-03-14 삼성전자주식회사 반도체 장치 제조 방법
EP3582009A1 (en) 2018-06-15 2019-12-18 ASML Netherlands B.V. Reflector and method of manufacturing a reflector
CN111354500B (zh) * 2020-03-16 2022-03-22 中国科学院高能物理研究所 一种同步辐射x射线双反射镜
CN113832505B (zh) * 2021-10-13 2022-04-08 哈尔滨工业大学 大尺寸薄壁x射线聚焦镜自动化复制装置
CN113913877B (zh) * 2021-10-13 2022-08-09 哈尔滨工业大学 大尺寸薄壁x射线聚焦镜复制方法
WO2025233082A1 (en) * 2024-05-07 2025-11-13 Carl Zeiss Smt Gmbh Collector device, wafer inspection apparatus having a collector device

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US1084731A (en) 1913-02-06 1914-01-20 Daniel H Deery Resilient tire.
JPH0631887B2 (ja) * 1988-04-28 1994-04-27 株式会社東芝 Ｘ線ミラー及びその製造方法
JPH0580199A (ja) * 1991-09-24 1993-04-02 Toshiba Corp Ｘ線ミラ−
DE10138313A1 (de) 2001-01-23 2002-07-25 Zeiss Carl Kollektor für Beleuchtugnssysteme mit einer Wellenlänge < 193 nm
US6972421B2 (en) * 2000-06-09 2005-12-06 Cymer, Inc. Extreme ultraviolet light source
DE10214259A1 (de) * 2002-03-28 2003-10-23 Zeiss Carl Semiconductor Mfg Kollektoreinheit für Beleuchtungssysteme mit einer Wellenlänge <193 nm
US7084412B2 (en) * 2002-03-28 2006-08-01 Carl Zeiss Smt Ag Collector unit with a reflective element for illumination systems with a wavelength of smaller than 193 nm
US6867846B2 (en) * 2003-01-15 2005-03-15 Asml Holding Nv Tailored reflecting diffractor for EUV lithographic system aberration measurement
US6841322B1 (en) 2003-06-30 2005-01-11 Intel Corporation Detecting erosion in collector optics with plasma sources in extreme ultraviolet (EUV) lithography systems
US7230258B2 (en) 2003-07-24 2007-06-12 Intel Corporation Plasma-based debris mitigation for extreme ultraviolet (EUV) light source
US7423275B2 (en) 2004-01-15 2008-09-09 Intel Corporation Erosion mitigation for collector optics using electric and magnetic fields
US7405871B2 (en) * 2005-02-08 2008-07-29 Intel Corporation Efficient EUV collector designs
JP5076349B2 (ja) * 2006-04-18 2012-11-21 ウシオ電機株式会社 極端紫外光集光鏡および極端紫外光光源装置
EP1882984B1 (en) * 2006-07-28 2011-10-12 Media Lario s.r.l. Multi-reflection optical systems and their fabrication
DE102007033701A1 (de) * 2007-07-14 2009-01-22 Xtreme Technologies Gmbh Verfahren und Anordnung zur Reinigung von optischen Oberflächen in plasmabasierten Strahlungsquellen

Also Published As

Publication number Publication date
WO2008012111B1 (en) 2008-03-20
ATE528692T1 (de) 2011-10-15
JP2009545181A (ja) 2009-12-17
US20100091941A1 (en) 2010-04-15
EP1882984B1 (en) 2011-10-12
WO2008012111A1 (en) 2008-01-31
EP1882984A1 (en) 2008-01-30
EP2047334A1 (en) 2009-04-15

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