JP5305683B2 - 立方晶窒化硼素含有皮膜の形成方法 - Google Patents
立方晶窒化硼素含有皮膜の形成方法 Download PDFInfo
- Publication number
- JP5305683B2 JP5305683B2 JP2008036112A JP2008036112A JP5305683B2 JP 5305683 B2 JP5305683 B2 JP 5305683B2 JP 2008036112 A JP2008036112 A JP 2008036112A JP 2008036112 A JP2008036112 A JP 2008036112A JP 5305683 B2 JP5305683 B2 JP 5305683B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- target
- cbn
- input power
- boron nitride
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0641—Nitrides
- C23C14/0647—Boron nitride
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3485—Sputtering using pulsed power to the target
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- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Description
(a)電力投入方法:パルス状
(b)投入電力パルス幅:100μs以下(好ましくは30μs以下)
(c)前記ターゲットのエロージョンエリアにおける最大投入電力密度:0.33kW/cm2以上
cBNの割合(%)=〔(cBNのピーク強度)/(cBNのピーク強度+hBNのピーク強度)〕×100 …(2)
但し、上記「cBNのピーク強度」および「hBNのピーク強度」は、フーリエ変換赤外分光光度計(FTIR)により分析したピーク強度(ピーク高さ)をいう。
(a)電力投入方法:パルス状
(b)投入電力パルス幅:100μs以下
(c)前記ターゲットのエロージョンエリアにおける最大投入電力密度:0.33kW/cm2以上
cBNの割合(%)=〔(cBNのピーク強度)/(cBNのピーク強度+hBNのピーク強度)〕×100 …(2)
但し、上記「cBNのピーク強度」および「hBNのピーク強度」は、フーリエ変換赤外分光光度計(FTIR)により分析したピーク強度(ピーク高さ)をいう。
2 スパッタパルス電源
3 基板
4 チャンバ
5 スイッチング素子
6 バイアス電源
7 バイアステーブル
8 電圧測定器
9 基板ホルダ
10 DC電源
Claims (3)
- B4C(炭化四硼素)含有ターゲットを用い、マグネトロンスパッタリング法により、前記ターゲットを構成する硼素と窒素含有ガス中の窒素を反応させて立方晶窒化硼素含有皮膜を基板上に形成するにあたり、前記基板に150V以下のバイアス電圧を印加した状態で、下記条件(a)(b)および(c)を満たすようにして前記ターゲットを構成する硼素のイオン化を促進させつつ、上記皮膜を形成することを特徴とする立方晶窒化硼素含有皮膜の形成方法。
(a)電力投入方法:パルス状
(b)投入電力パルス幅:100μs以下
(c)前記ターゲットのエロージョンエリアにおける最大投入電力密度:0.33kW/cm2以上 - (平均電力/前記ターゲットの面積)が、82W/cm2以下である請求項1に記載の形成方法。
- 前記投入電力パルス幅を30μs以下とする請求項1または2に記載の形成方法。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008036112A JP5305683B2 (ja) | 2008-02-18 | 2008-02-18 | 立方晶窒化硼素含有皮膜の形成方法 |
US12/865,803 US20100320077A1 (en) | 2008-02-18 | 2009-02-17 | Method for production of cubic boron nitride-containing films |
EP09711697A EP2243857B1 (en) | 2008-02-18 | 2009-02-17 | A method for the production of cubic boron nitride-containing films |
KR1020107018201A KR20100116618A (ko) | 2008-02-18 | 2009-02-17 | 입방정 질화붕소 함유 피막의 형성 방법 |
PCT/JP2009/052615 WO2009104567A1 (ja) | 2008-02-18 | 2009-02-17 | 立方晶窒化硼素含有皮膜の形成方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008036112A JP5305683B2 (ja) | 2008-02-18 | 2008-02-18 | 立方晶窒化硼素含有皮膜の形成方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2009191344A JP2009191344A (ja) | 2009-08-27 |
JP5305683B2 true JP5305683B2 (ja) | 2013-10-02 |
Family
ID=40985447
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008036112A Expired - Fee Related JP5305683B2 (ja) | 2008-02-18 | 2008-02-18 | 立方晶窒化硼素含有皮膜の形成方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US20100320077A1 (ja) |
EP (1) | EP2243857B1 (ja) |
JP (1) | JP5305683B2 (ja) |
KR (1) | KR20100116618A (ja) |
WO (1) | WO2009104567A1 (ja) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5525854B2 (ja) * | 2010-02-19 | 2014-06-18 | 国立大学法人長岡技術科学大学 | 窒化ホウ素皮膜 |
CH713453A1 (de) * | 2017-02-13 | 2018-08-15 | Evatec Ag | Verfahren zur Herstellung eines Substrates mit einer bordotierten Oberfläche. |
US11495454B2 (en) * | 2020-08-07 | 2022-11-08 | Applied Materials, Inc. | Deposition of low-stress boron-containing layers |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3700633C2 (de) * | 1987-01-12 | 1997-02-20 | Reinar Dr Gruen | Verfahren und Vorrichtung zum schonenden Beschichten elektrisch leitender Gegenstände mittels Plasma |
DE4407274C1 (de) * | 1994-03-04 | 1995-03-30 | Fraunhofer Ges Forschung | Verfahren zur Herstellung von verschleißfesten Schichten aus kubischem Bornitrid und ihre Anwendung |
-
2008
- 2008-02-18 JP JP2008036112A patent/JP5305683B2/ja not_active Expired - Fee Related
-
2009
- 2009-02-17 EP EP09711697A patent/EP2243857B1/en not_active Not-in-force
- 2009-02-17 WO PCT/JP2009/052615 patent/WO2009104567A1/ja active Application Filing
- 2009-02-17 US US12/865,803 patent/US20100320077A1/en not_active Abandoned
- 2009-02-17 KR KR1020107018201A patent/KR20100116618A/ko active Search and Examination
Also Published As
Publication number | Publication date |
---|---|
EP2243857B1 (en) | 2012-12-19 |
EP2243857A4 (en) | 2011-12-07 |
WO2009104567A1 (ja) | 2009-08-27 |
US20100320077A1 (en) | 2010-12-23 |
JP2009191344A (ja) | 2009-08-27 |
EP2243857A1 (en) | 2010-10-27 |
KR20100116618A (ko) | 2010-11-01 |
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