JP5304474B2 - Liquid processing apparatus, liquid processing method, and storage medium - Google Patents

Abstract

PURPOSE: A liquid processing apparatus, a liquid processing method, and a storage media are provided to protect a liquid processing process by prevent processing liquid from being dropped. CONSTITUTION: A nozzle(40) is arranged at the lower side of a nozzle head(34). The nozzle head is the tip end of an arm(33). A plurality of liquid processing parts is serially arranged to a transversal direction. A nozzle bath is installed to hold the nozzle. A supporting unit is arranged at the upper region of the liquid processing parts and between the nozzle baths. A driving unit moves the supporting unit.

Description

  The present invention relates to a liquid processing apparatus, a liquid processing method, and a storage medium that perform a liquid processing by supplying a processing liquid to a substrate.

  In the photoresist process, which is one of the semiconductor manufacturing processes, a resist is applied to the surface of a semiconductor wafer (hereinafter referred to as a wafer), the resist is exposed in a predetermined pattern, and then developed to form a resist pattern. . Such a process is generally performed by using a system in which an exposure apparatus is connected to a coating and developing apparatus for coating and developing a resist.

  The coating and developing apparatus is provided with various liquid processing modules for supplying a processing liquid to the wafer and performing liquid processing. As this liquid processing module, for example, there is a resist coating module (resist coating apparatus) for coating a resist on a wafer. The resist coating module includes a spin chuck that holds a wafer, and a coating processing unit that includes a cup provided with a draining unit and an exhausting unit provided so as to surround the wafer held by the spin chuck. Further, the resist coating module includes a resist discharge nozzle for discharging a resist onto the wafer, a thinner discharge nozzle for improving a wettability of the resist by discharging a processing liquid such as thinner onto the wafer before supplying the resist, It has. These resist discharge nozzles and thinner discharge nozzles are attached to an arm that supports them, and move between the cup and a nozzle bath provided outside the cup to make each nozzle stand by.

  By the way, in recent years, there are cases where a plurality of types of resists having different concentrations and components are properly used due to the demand for a large variety of small quantities. In order to properly use the resist in such a manner, it is conceivable to change the plurality of resist discharge nozzles respectively connected to the plurality of lines for supplying different types of resist each time the arm switches processing. However, for the purpose of simplifying the apparatus configuration, there is a case in which a collective nozzle in which the plurality of resist discharge nozzles and thinner discharge nozzles are combined is attached to one arm and driven.

  Furthermore, in order to simplify the apparatus configuration, there may be a case where a plurality of coating processing units including the cup are provided side by side in a single resist coating module. In this case, each of the coating processing units and the nozzle bath are arranged on a straight line, for example, and the arm shared with each coating processing unit performs a resist coating process while moving between the nozzle bath and the cup. Since the arm is required to move from the movement start point to the end point with the shortest distance in order to improve the throughput, the arm moves linearly in parallel with the arrangement direction of the coating processing unit and the nozzle bath. Therefore, in the resist coating module configured in this way, each nozzle crosses the cup due to its structure.

  By the way, in order to start the discharge of the resist and the thinner immediately after moving each nozzle onto the wafer, it is necessary to fill these liquids up to the vicinity of the tip of the nozzle. However, when the nozzle of the resist coating module configured as described above is moved in such a state that the liquid is filled, the movement is caused by vibrations generated when the arm is driven or fluctuations in the internal pressure of the line supplying the resist and thinner. There is a possibility that the liquid drops from the tip of each nozzle at a position other than the intended position on the way, and the liquid drops fall. When each nozzle crosses the cup as described above, if droplets fall on the spin chuck or on a pre-processed or processed wafer, particles are generated due to contamination of the spin chuck or defective product wafer coating. This may cause the yield to decrease.

  Patent Document 1 and Patent Document 2 describe monitoring the state of a chemical solution discharged from a moving nozzle during application using an optical sensor and a camera system, respectively. However, these are for the purpose of detecting abnormalities in the discharge state and discharge timing of the chemical solution, and the monitoring area of the chemical solution state is limited during and before and after the discharge of the chemical solution. Therefore, these optical sensors and cameras do not monitor nozzles moving outside the cup. Further, Patent Documents 1 and 2 do not describe the above-described means for avoiding the drop of the droplet when an abnormality occurs. Therefore, none of these Patent Documents 1 and 2 can solve the above problem. Further, Patent Document 3 does not describe a problem that occurs when the nozzle moves between the cups, and is insufficient to solve the above-described problem. Further, in Patent Document 4, in order to solve the above-mentioned problem, it is necessary to always perform analysis by a camera, which may cause a load on the program.

JP2008-307465 JP2002-31680 JP2008-313822 JP2008-135679

  The present invention has been made under such circumstances, and an object thereof is to share a plurality of liquid processing units having substrate holding units arranged in a row in the horizontal direction with respect to these liquid processing units. In a liquid processing apparatus comprising a plurality of processing liquid nozzles provided along the arrangement direction of the liquid processing units, the processing liquid is prevented from dropping from the processing liquid nozzle to the substrate, and the yield is prevented from decreasing. An object of the present invention is to provide a liquid processing apparatus, a liquid processing method, and a storage medium.

The liquid processing apparatus of the present invention includes a plurality of liquid processing units that are configured by providing a substrate holding unit that horizontally holds a substrate in a cup in which an opening is formed on the upper side, and are arranged in a row in the lateral direction. When,
A plurality of processing liquid nozzles provided on a support body along the arrangement direction of the liquid processing units in order to supply different types of processing liquids to the substrates, respectively, in common for the plurality of liquid processing units;
A nozzle bath provided for waiting the processing liquid nozzle;
A support driving mechanism for moving each processing liquid nozzle along the row of liquid processing units via the support between the upper region of each of the liquid processing units and the nozzle bath;
An optical sensor that forms an optical axis along the arrangement direction of the processing liquid nozzles below each processing liquid nozzle,
A means for determining that a dripping or dripping of the treatment liquid has occurred when detecting a state in which the optical axis is blocked by the optical sensor when each treatment liquid nozzle is not used;
Coping means for performing coping operation based on the output of the determination signal;
Bei to give a,
The coping means is an imaging means for imaging the tip of the treatment liquid nozzle;
Based on the imaging result by the imaging means, a judgment means for judging which treatment liquid nozzle has dripped or dripping the treatment liquid;
And determining by the determining means based on the output of the determination signal .

The coping means is an extension line in the arrangement direction of the liquid treatment units or a drainage area provided between the liquid treatment parts in the arrangement direction, and the drainage area is subjected to liquid dripping or treatment liquid by the judgment means. Control means for outputting a control signal so as to discharge the processing liquid from the processing liquid nozzle determined to have dripped;

  For example, the coping means includes a liquid receiving member for receiving liquid dripping and a dropped liquid droplet from each processing liquid nozzle, and the liquid receiving member when liquid dripping or dripping is detected, below the liquid processing nozzle. Moving means for moving the liquid from the retreat area outside the liquid receiving area to the liquid receiving area for receiving the liquid, and the coping means moves the support driving mechanism and moves from the processing liquid nozzle. You may provide the stop means to stop discharge of a process liquid. The coping means may comprise an alarm generating means. The support driving mechanism is configured to move the support up and down, and the optical sensor is provided in a fixed portion fixed to the support driving mechanism, for example.

The substrate processing method of the present invention includes a substrate holding unit that horizontally holds a substrate in a cup in which an opening is formed on each upper side, and a plurality of liquid processing units that are arranged in a row in a lateral direction. Supplying different types of processing liquids to the substrate from a plurality of processing liquid nozzles that are shared and provided on the support along the arrangement direction of the liquid processing units;
A step of waiting the processing liquid nozzle in the nozzle bath; and
A step of moving each processing liquid nozzle along a row of the liquid processing units via the support between each upper region of the liquid processing unit and the nozzle bus by a support driving mechanism;
Forming an optical axis along the arrangement direction of the processing liquid nozzles below each processing liquid nozzle by an optical sensor;
When detecting the state where the optical axis is blocked by the optical sensor when each processing liquid nozzle is not used, determining that dripping or dripping of the processing liquid has occurred, and outputting a determination signal;
Coping means for performing coping operation based on the output of the determination signal;
Bei to give a,
The step of performing the coping operation is a step of imaging the tip of the processing liquid nozzle by an imaging unit;
A step of determining, by a determination unit, which treatment liquid nozzle has dripped or dripped a treatment liquid based on an imaging result by the imaging unit;
A step of performing a determination by a determination unit based on the output of the determination signal;
It is characterized by including .

For example, pre-SL solution extension on or in the array direction of the processing unit, and a processing liquid determined that dripping of liquid dripping or the treatment liquid occurs by the determining means to the liquid discharge region provided between the liquid processing unit in the arrangement direction thereof A step of discharging the processing liquid from the nozzle;
And a step of outputting a control signal from the control means in order to discharge the processing liquid as described above.

  Further, the step of emitting the countermeasure output includes a step for receiving liquid dripping from each processing liquid nozzle and a dropped liquid droplet by the liquid receiving member, and a liquid receiving member when liquid dripping or dripping is detected, And a step of moving from the retreat area outside the liquid receiving area to the liquid receiving area for receiving the liquid below the liquid processing nozzle by the moving means.

The storage medium of the present invention is a storage medium storing a computer program used in a liquid processing apparatus that performs liquid processing on a substrate,
The computer program is for carrying out the liquid processing method described above.

  According to the present invention, the optical sensor that forms the optical axis along the arrangement direction of the treatment liquid nozzles below the treatment liquid nozzle provided along the arrangement direction of the liquid treatment units, and the non-existence of each treatment liquid nozzle. When a state in which the optical axis is blocked by the optical sensor is detected during use, it is determined that dripping or dripping of the processing liquid has occurred, and a countermeasure is provided based on the output of the determination signal and means for outputting the determination signal Coping means for performing the operation. Therefore, when each processing liquid nozzle moves on each liquid processing section arranged in the horizontal direction, the processing liquid drops on the substrate or the substrate holding section, thereby preventing normal processing or forming particles. It can be suppressed. As a result, a decrease in yield is suppressed.

1 is a perspective view of a resist coating apparatus according to the present invention. It is a top view of the said resist coating apparatus. It is a block diagram of the coating process part of the said resist coating apparatus. It is a perspective view of the resist supply part of the said resist coating apparatus. It is a top view of the front end side of the arm of the said resist supply part. It is a perspective view of the back surface side of the said arm. It is explanatory drawing which shows the state which the liquid dripping generate | occur | produced from the collection nozzle of the said arm. It is process drawing which showed the process in which a resist is apply | coated to a wafer. It is a block diagram of the control part of the said resist coating apparatus. It is explanatory drawing which showed a mode that the chemical | medical solution discharge to a nozzle bath was performed. It is explanatory drawing which showed the relationship between the position of the arm at the time of abnormality, and the nozzle bath to which an arm moves. It is the flowchart which showed the operation | movement at the time of abnormality. It is the perspective view which showed the resist supply part of other embodiment. It is a side view of the said resist supply part. It is a top view of the application | coating and developing apparatus provided with the said resist coating device. It is a perspective view of the coating and developing apparatus. FIG. 2 is a longitudinal plan view of the coating and developing apparatus.

(First embodiment)
A resist coating apparatus 1 which is an example of the liquid processing apparatus of the present invention will be described with reference to FIG. 1 and FIG. The resist coating apparatus 1 includes three coating processing units 11 a, 11 b, 11 c, a resist supply unit 3, a resist film peripheral edge removing mechanism 61 a, 61 b, 61 c, and a nozzle bus for waiting each nozzle of the resist supply unit 3. 30. Although not shown, a gas supply unit is provided on each coating processing unit 11 to supply a gas downward and generate a downward airflow.

  The application processing units 11a to 11c are arranged in a row in the horizontal direction. Each of the coating processing units 11a to 11c is configured in the same manner. Here, the coating processing unit 11a will be described as an example and will be described with reference to FIG. Each of the coating processing units 11a includes a spin chuck 12a that is a substrate holding unit that sucks and horizontally holds the center of the back surface of the wafer W, and the spin chuck 12a is connected to a rotation driving mechanism 14a via a rotation shaft 13a. . The spin chuck 12a is configured to be rotatable around a vertical axis while holding the wafer W via the rotation drive mechanism 14a, and is set so that the center of the wafer W is positioned on the rotation axis. The rotational drive mechanism 14a controls the rotational speed of the spin chuck 12a in response to a control signal from the control unit 7 described later.

  A cup 21a having an opening 20a on the upper side is provided around the spin chuck 12a so as to surround the wafer W on the spin chuck 12a, and the upper end side of the side peripheral surface of the cup 21a is inclined to the inner side. Is forming. On the bottom side of the cup 21a, for example, a liquid receiving portion 23a having a concave shape is provided. The liquid receiving portion 23a is partitioned into an outer region and an inner region over the entire circumference on the lower peripheral edge side of the wafer W by the partition wall 24a. At the bottom of the outer region, a drain port 25a for discharging a drain of stored resist or the like is provided, and at the bottom of the inner region, exhaust ports 26a, 26a for exhausting the processing atmosphere are provided.

  One end of an exhaust pipe 27a is connected to the exhaust ports 26a, 26a, and the other end of the exhaust pipe 27a is connected to an exhaust path of a factory where the resist coating apparatus 1 is installed, for example, via an exhaust damper 28a. . The exhaust damper 28a receives the control signal from the control unit 7 and controls the exhaust amount in the cup 21a.

  In the figure, reference numeral 15a denotes an elevating pin configured to be movable up and down, and three are provided in the cup 21a (only two are shown for convenience in FIGS. 1 and 3). In response to the operation of a substrate transfer means (not shown) that transfers the wafer W to the resist coating apparatus 1, the lifting mechanism 16a raises and lowers the lift pins 15a in response to a control signal output from the control unit 7, and the substrate transfer means and spin The wafer W is delivered to and from the chuck 12a.

  For the portions corresponding to each part of the coating processing unit 11a for the coating processing units 11b and 11c, the same numbers as those used in the description of the coating processing unit 11a are used, and b and c are added instead of a, respectively. It is shown in the figure. In addition, each cup of each of the coating processing units 11a to 11c performs a liquid discharge process from a nozzle that causes liquid dripping between the cups when liquid dripping occurs as described later, and performs liquid dripping removal. Arranged at intervals.

  Next, the configuration of the resist supply unit 3 will be described with reference to FIG. The resist supply unit 3 includes a drive mechanism (support drive mechanism) 32, an arm 33 that is a support extending in the horizontal direction from the drive mechanism 32, an assembly nozzle 40, and a bracket 50 that is a fixing member. . 3A in the figure is a base that supports the drive mechanism 32, and includes a guide 31 that extends in the arrangement direction of the coating processing units 11a to 11c. The drive mechanism 32 moves along the length direction of the guide 31. The collective nozzle 40 is supported on the lower side of the nozzle head 34 that forms the tip of the arm 33, and includes ten resist discharge nozzles 41 for supplying ten types of resists having different concentrations and components, and a wafer W. And a thinner discharge nozzle 42 for supplying a processing liquid, for example, thinner, for easily spreading the resist. Here, the resist and the thinner are collectively referred to as a chemical solution. The nozzles 41 and 42 are arranged in parallel with the movement direction of the nozzles 41 and 42 by the arm 33.

  Further, the arm 33 is configured to be movable up and down by the drive mechanism 32. FIGS. 5A and 5B show a state in which the arm 33 is in the raised position and the lowered position, respectively. In order to prevent interference with each of the coating processing units 11 a to 11 c, the peripheral edge removing mechanisms 61 a to 61 c and the nozzle bath 30, the arm 33 moves in the horizontal direction in this state, and supplies the chemical solution from the collective nozzle 40 to the wafer W. In order to suppress the generation of mist, the wafer W is moved to the lowered position so that the distance between the nozzles 41 and 42 becomes a predetermined size.

  Each of the nozzles 41 and 42 is provided with a discharge port for a chemical solution that opens vertically downward. The nozzles 41 and 42 can be moved onto the central portion of the wafer W by the lateral movement of the drive mechanism 32, and discharge the chemical solution from the respective discharge ports to the central portion of the wafer W that rotates about the vertical axis. The discharged chemical liquid is applied to the entire surface of the wafer W by so-called spin coating that spreads to the peripheral edge of the wafer W by centrifugal force.

  In FIG. 3, reference numeral 43 denotes a chemical solution supply unit. The chemical liquid supply unit 43 includes a tank in which chemical liquids to be supplied to the nozzles 41 and 42 are stored, and liquid supply means for pressurizing the tank and supplying the chemical liquid in the tank to the nozzles. The chemical solution supply mechanism 44 includes eleven units, which are the same number as the nozzles 41 and 42. In the figure, reference numeral 45 denotes a chemical liquid supply line that connects the nozzles 41 and 42 and the respective chemical liquid supply mechanisms 43, and each chemical liquid supply line 45 is provided with a flow rate control unit 47 including a valve 46. In response to a control signal from the control unit 7, the opening and closing of each valve 46 is controlled so that ten types of resist and thinner can be switched and supplied to the wafer W.

  FIG. 6 shows the back surface of the arm 33, and a camera 35, which is an image sensor (imaging means) for acquiring an image, and a light source 36 are provided on the back surface side of the arm 33. The camera 35 includes, for example, a wide-angle lens, and can capture the tip of the nozzles 41 and 42 from a direction substantially orthogonal to the arrangement direction of the nozzles 41 and 42 to identify the nozzle that has dripped and drops. ing. The light source 36 illuminates the nozzles 41 and 42 when taking an image. While the camera 35 constantly transmits an image to the control unit 7 during the resist coating process, the image data is analyzed in order to suppress the load on the CPU 74 by executing an analysis program described later. Only done when a fall is detected.

  Here, dripping means a state in which the chemical solution is exposed below the tip of the nozzle, and droplet dropping (treatment liquid dripping) means a state in which the chemical solution is separated from the tip as a result of this dripping growing. means. Further, the control unit 7 is, for example, No. 1 in order from the left when viewed from the distal end side of the arm 33. 1, no. 2 ... No. Nozzle numbers such as 11 are assigned, and an abnormality occurrence state is managed for each number as described later.

  Next, the bracket 50 will be described. The base side of the bracket 50 is fixed to the drive mechanism 32, and the distal end side of the bracket 50 extends along the arm 33. As shown in FIGS. 5A and 5B, the front end portion 51 of the bracket 50 includes side plates 52a and 52b that sandwich the nozzle head 34 from side to side when viewed from the front end side of the arm 33. The side plates 52a and 52b are provided with a transmissive optical sensor (light sensor) 53 that includes a light projecting portion 53a and a light receiving portion 53b that are paired with each other. Accordingly, the arm 33 can move in the Y direction (the arrangement direction of the coating processing units 11 a to 11 b) and the height direction (Z direction) in FIG. 1 as described above, while the optical sensor 53 follows the movement of the drive mechanism 32. Although it moves integrally with the arm 33 in the Y direction, it does not move in the Z direction. When the chemical solution is discharged onto the wafer W, the optical sensor 53 is also lowered together with the arm 33, and when the distance from the wafer W is reduced, the light projecting portions 53a and 53b are contaminated by the rebound of the chemical solution. May decrease. Therefore, it is preferable to adopt a configuration in which the optical sensor 53 does not descend regardless of the lowering of the arm 33 in this manner, because the risk of erroneous detection of dripping and dropping of the liquid drops is reduced.

  When the arm 33 is located at the raised position, the light projecting portion 53a and the light receiving portion 53b are located below the nozzles 41 and 42, and the light projecting portion as indicated by the chain line arrow in FIG. Light is irradiated from 53a to the light receiving portion 53b so as to pass below the tips of the nozzles 41 and 42 along the arrangement direction of the nozzles 41 and 42, and an optical axis L1 indicated by a chain line arrow in the figure is formed. The The light projecting portion 53a is preferably one that emits light in a long wavelength region such as visible light in order to suppress the risk of exposure of the resist. Further, the light to be irradiated in this way is better if it has a high directivity like a laser. The distance L between the optical axis L1 and the lower ends of the nozzles 41 and 42 is, for example, 0.5 mm to 1.5 mm.

  The light receiving unit 53b transmits an output signal corresponding to the amount of light received to the control unit 7. As shown in FIG. 5B, when the dripping D occurs or the liquid droplet falls when the arm 33 is located at the raised position, the chemical solution emits the light irradiated from the light projecting unit 53a to the light receiving unit 53b. The amount of light received by the light receiving unit 53b is reduced, and the signal output from the light receiving unit 53b changes according to the decrease.

  Next, the coating film peripheral edge removal mechanisms 61a to 61c will be described. The coating film peripheral edge removal mechanisms 61a to 61c are provided to prevent peeling of the peripheral edge film by removing the peripheral edge of the resist film formed on the wafer W of each of the coating processing sections 11a to 11c. ing. Each of the coating film peripheral edge removing mechanisms 61a to 61c includes a thinner discharge nozzle 62 that supplies thinner, which is a resist solvent, to the peripheral edge of the wafer W, an arm 63 that holds the thinner discharge nozzle 62, and a drive that holds the arm 63. And a mechanism 64. The drive mechanism 64 moves the arm 63 up and down and moves in the Y direction along the guide 65. In the drawing, reference numerals 66a to 66c denote nozzle baths formed in a cup shape with the upper side opened, and are provided along the rows of the coating processing units 11a to 11c. Each thinner discharge nozzle 62 is accommodated in each of the nozzle buses 66a to 66c and waits when the process is not performed, and moves onto the peripheral edge of the wafer W of the corresponding coating processing unit 11a to 11c when the process is performed.

  The nozzle bath 30 is provided on one end side in the Y direction in which the collective nozzle 40 moves, and is formed in a cup shape with the upper side opened. The collective nozzle 40 is accommodated in the nozzle bath 30 and waits when the wafer W is not processed. In addition, when liquid dripping and droplet drop are detected, the chemical liquid may be discharged into the nozzle baths 30 and 66a to 66c forming the drainage region, and the liquid is discharged into the nozzle baths 30 and 66a to 66c. A drainage path (not shown) for draining the chemical solution is provided.

  Subsequently, a process of applying a resist to the wafer W by the resist coating apparatus 1 will be described. For example, the wafer W transferred to the coating processing unit 11a by the transfer means outside the coating apparatus 1 is transferred to the spin chuck 12a via the lift pins 15a. Thereafter, the collective nozzles 40 waiting in the nozzle bath 30 are lifted through the arms 33, and after exiting from the nozzle bath 30, move in the Y direction so that the thinner discharge nozzle 42 is positioned on the center portion of the wafer W. Then (FIG. 8A), the arm 33 is lowered. In parallel with the movement operation of the arm 33, the spin chuck 12a is rotated and thinner is supplied onto the rotating wafer W. After the thinner is spin-coated, the arm 33 moves in the Y direction so that the resist discharge nozzle 41 used in the process is positioned on the center of the wafer W. In parallel with this moving operation, the rotation speed of the wafer W increases, the resist R is supplied onto the wafer W, and the resist R is applied to the entire surface of the wafer W by spin coating (FIG. 8B).

  After stopping the supply of the resist R, the rotation speed of the wafer W is reduced, the thickness of the resist R is made uniform, and then the rotation speed is increased again, and the coated resist R is shaken and dried to form a resist film. During this time, the arm 33 moves to the ascending position, then moves laterally onto the nozzle bath 30, and then descends and waits in the nozzle bath 30. On the other hand, a thinner is supplied from the thinner discharge nozzle 61 while the wafer W is rotated, and the resist film applied to the peripheral edge of the wafer W is removed. Thereafter, as in the case of the resist film, the thinner is shaken and dried to complete a series of liquid treatments.

  After the thinner discharge nozzle 61 is retracted to the nozzle bus 66a of the peripheral edge removing mechanism 61a, the wafer W is transferred to the transfer means outside the apparatus 1 via the elevating pins 15a and unloaded from the resist coating apparatus 1. In this way, the wafers W are sequentially transferred to the coating processing units 11a to 11c, for example, at predetermined intervals by the transfer unit according to a preset transfer cycle of the wafer W, and the arm 33 is moved to the coating processing unit 11a. In addition, it moves to another coating processing section and the same processing is performed.

  In this example, the arm 33 moves from the nozzle bath 30 to the coating processing unit 11 to which the wafer W has been transferred first, and after finishing the liquid processing there, returns to the nozzle bath 30 and then the coating processing unit to which the wafer W has been transferred later. Move to 11. However, after moving from the nozzle bath 30 to the one coating processing unit 11, the nozzle bath 30 does not return to the other coating processing unit 11, but performs processing by moving to another coating processing unit 11. The arm 33 may be operated so as to return to step (b).

  The resist coating apparatus 1 is provided with a control unit 7 that constitutes coping means including, for example, a computer. The configuration of the control unit 7 will be described with reference to FIG. In the figure, reference numeral 70 denotes a bus, and the control unit 7 includes a processing program 71, an analysis program 7A, a first memory 72, a second memory 73, a CPU 74, an operation unit 75, and a display unit 76 connected to the bus 70. I have. The analysis program 7A constituting the determination means performs analysis processing on the image transmitted from the camera 35 when an abnormality occurs, and the processing program 71 performs other processing.

  The first memory 72 includes an area in which values of processing parameters such as processing temperature, processing time, supply amount of each chemical solution or power value are written, and when the CPU 72 executes each command of the processing program 71, these are stored. A processing parameter is read, and a control signal corresponding to the parameter value is sent to each part of the resist coating apparatus 1. The operation of the processing program 71 includes operations related to input and display of these processing parameters. The processing program 71 and the analysis program 7A are stored in a program storage unit 77 configured by a computer storage medium such as a flexible disk, a compact disk, a hard disk, an MO (magneto-optical disk), and a memory card and installed in the control unit 7. The

  The second memory 73 stores image data of the front end of the collective nozzle 40 transmitted from the camera 35 and various types of data to be described later that the user uses for maintenance. The stored image data is erased from the second memory 73 by the processing program 71 after a predetermined time, for example, in order to reduce the used capacity of the second memory 73. The operation unit 75 includes a mouse, a keyboard, and the like. For example, the above-described processing parameters are set by the operation unit 75. In addition, as a countermeasure to be taken when the user detects dripping or drop of liquid droplets, either a discharge process (dummy dispensing) not intended for applying a chemical solution to the nozzle bath or a stop of the process in the resist coating apparatus 1 is performed. It can be selected from the operation unit 75. The display unit 76 is configured as a display, for example.

  The control unit 7 includes, for example, an ID of the wafer W transferred to the resist coating apparatus 1 from a host computer that controls the transfer of the wafer W, a timing at which the wafer W is transferred, and a transfer destination coating processing unit. Data on the type of resist to be applied is transmitted, and based on the data, the processing program 71 moves the collective nozzle 40 to each application processing unit 11 and performs resist application processing with the nozzle corresponding to the wafer W.

  An alarm generator 79 is connected to the bus 70. The alarm generating unit 79 outputs an alarm when the occurrence of liquid dripping and the drop of liquid droplets are detected, when an abnormality of the apparatus is detected, or when a recommended maintenance time comes. Further, the camera 70, the light source 36, the driving mechanism 32, the chemical solution supply unit 43, the flow rate control unit 47, and the like described above are connected to the bus 70, so that the resist coating process on the wafer W, liquid dripping, and droplet dropping are performed. It is possible to execute a predetermined coping operation according to the occurrence of this.

  Here, the detection operation of the occurrence of dripping, the drop of the droplet, and the abnormality of the apparatus, and the process until the alarm corresponding to them is generated will be described. As described above, when the light emitted from the light projecting unit 53a is blocked and the amount of light received by the light receiving unit 53b decreases, a signal corresponding thereto (referred to as a light amount reduction signal for convenience) is output from the light receiving unit 53b. Is done. Therefore, as shown in FIG. 5B, when the arm 33 is in the lowered position, the processing program 71 outputs a signal for positioning the arm 33 in the lowered position (referred to as a lowered signal for convenience) and reduces the light amount. A signal is output to the control unit 7. At this time, the processing program 71 does not determine that the occurrence of liquid dripping or droplet dropping has occurred.

  Then, as shown in FIG. 7, when the arm 33 is in the raised position, the processing program 71 outputs a signal for positioning the arm 33 in the raised position (referred to as a raised signal for convenience). When the light amount decrease signal is output while the ascending signal is output in this way, the processing program 71 determines that the occurrence of liquid dripping and droplet dropping has occurred, and an alarm indicating that is generated by the alarm generation unit 79. generate. The arm 33 is in the ascending position while it moves horizontally between the nozzle bath 30 and each of the coating processing units 11a to 11c and waits until it moves down to the coating processing units 11a to 11c and the nozzle bath 30, respectively. While doing. Therefore, the occurrence of liquid dripping and droplet dropping is monitored in these sections. The nozzles 41 and 42 are not in use during the horizontal movement at the raised position and the standby at the raised position. If the light amount decrease signal is not output when the descending signal is output, the processing program 71 determines that the apparatus 1 is abnormal, and the alarm generating unit 79 generates an alarm indicating the fact.

  In addition, when the occurrence of liquid dripping and droplet drop (abnormality) is detected as described above, the processing program 71 determines the nozzles 41 and 42 that have been identified as having an abnormality as will be described in detail later. The nozzle number and the time are associated with each other and stored in the second memory 73. Then, the processing program 71 calculates, for example, the average of the intervals between the times at which the abnormality has occurred in the past for each nozzle, and uses the average as the cycle in which the dripping and the drop of the liquid occur. And is displayed on the display unit 76. Then, the processing program 71 adds the cycle to the time when the recent abnormality occurred, calculates the timing at which the next abnormality is expected to occur for each nozzle, and stores the calculated timing in the second memory 73. The information is stored and displayed on the display unit 76. Further, when the calculated timing approaches, the processing program 71 causes the alarm generation unit 79 to generate an alarm for notification that the recommended maintenance time has come. The user can perform maintenance of the apparatus 1 based on the alarm.

  In addition, when the processing program 71 detects the occurrence of dripping or droplet dropping, the data about the position of the arm 33 and the operation direction of the arm 33 at that time is associated with the number of the nozzle that caused the abnormality. Store in the second memory 73. For example, the display unit 76 displays the position where the liquid dripping and the liquid drop have occurred in the past for each nozzle and the operation direction at that time, and the user refers to the display when performing the maintenance. The state of the nozzle can be checked while operating the arm.

  Further, the processing program 71 stores the IDs of the wafers placed on the spin chucks 12 a to 12 c of the coating processing units 11 a to 11 c in the second memory 73 when the liquid dripping and the drop of the droplet are detected. The stored ID is also displayed on the display unit 76, and the user selects and inspects the wafer W based on the display, for example, in an inspection process performed after resist coating.

  Next, a description will be given of the discharge process (dummy dispensing) of the chemical liquid to the nozzle bath performed by the user's selection when the liquid dripping and the liquid drop dropping are detected as described above. This discharge process identifies the nozzle that causes liquid dripping and liquid drop by imaging, discharges the chemical liquid from the nozzle, removes the chemical liquid in the discharge port once to prevent the liquid drop, and the liquid dripping. It is a process of removing by pushing away. In performing this process, in order to prevent the liquid droplets from dropping before the chemical liquid is discharged, the nozzle moves onto the nozzle bath at the shortest distance from the position where the liquid dripping is detected, and the nozzle bus moves to a predetermined height. Then, the chemical liquid is discharged as shown in FIG. Specifically, for example, when an abnormality is detected in the nozzle when the arm is located in the regions T1, T2, T3, and T4 surrounded by the chain line in FIG. 11, the arm 33 detects that the nozzle is in the nozzle bath 30, 66a. , 66b, 66c so as to be positioned. FIG. 10 shows the state in which the chemical liquid is discharged to the nozzle bath 66a, but the chemical liquid is similarly discharged to the other nozzle buses.

  Next, the operation in the case where dripping and droplet dropping occur while the coating process on the wafer W is performed as described above will be described with reference to the flowchart of FIG. At this time, it is assumed that the user is set to perform the discharge process to the nozzle bath, and the stop of the process in the resist coating apparatus 1 is not set. For example, when the arm 33 moves from the nozzle bath 30 to the coating processing unit 11b as described above, it is assumed that liquid dripping has occurred in the No. 3 nozzle, and in the destination coating processing unit 11b, No. 5 It is assumed that the resist is supplied by the nozzle. As described above, the amount of light received by the light receiving portion 53b decreases due to dripping, and the processing program 71 determines that the occurrence of dripping and droplet dropping has occurred based on the output signal from the light receiving portion 53b (step S1). ), An alarm is generated by the alarm generation unit 81 (step S2).

  In parallel with the generation of the alarm, the analysis program 7A is activated by the determination of the occurrence of the abnormality by the processing program 71 (step S3), and the analysis program 7A is transmitted from the camera 35 to the control unit 7. Based on the image stored in the second memory 73, it is determined which nozzle has an abnormality (step S4). After the determination, the operation of the analysis program 7A is stopped and, based on the determination result, the processing program 71 obtains data on the position of the arm 33 at the time of detecting the abnormality, the operation direction of the arm 33, and the time at the time of detecting the abnormality. No. determined to be abnormal. This is stored in the second memory 73 in association with the third nozzle. Further, the ID of the wafer W transferred to the resist coating apparatus 1 when this abnormality is detected is also stored in the second memory 73 (step S5).

  The processing program 71 stores the time at the time of abnormality detection stored this time and the No. stored in the second memory 73 until then. 3 and the time when the abnormality of the nozzle is detected. 3 calculates the period at which the nozzle 3 is abnormal and the timing at which the next abnormality occurs, and displays the calculation result on the display unit 76. It is determined whether the nozzle No. 3 is a nozzle used in the coating process immediately after the abnormality is detected (step S6).

  In this case, the application processing unit 11b to which the collective nozzle 40 is moved has a No. Since the nozzle No. 5 is used, it is determined in step S6 that the nozzle is not used in the coating process immediately after the abnormality detection. Then, the arm 33 moves onto the nozzle bath corresponding to the position when the dripping and the drop of the liquid droplet are detected. For example, if the arm 33 is located in the region T3 in FIG. 11 when the liquid dripping and the drop of the liquid droplet are detected, the arm 33 is the No. that caused the abnormality on the nozzle bath 66b corresponding to the region T3. 3 so that the nozzle is located. Then, the arm 33 is lowered toward the nozzle bath 66b. The chemical solution is discharged from the nozzle 3 to the nozzle bath 66b (step S7). After the chemical solution is discharged, the processing program 71 determines that the nozzle has recovered from the abnormal state, the operation before the execution of step S1 is resumed, the arm 33 moves again to the coating processing unit 11b, and the coating processing is performed.

  By the way, when it is determined in step S6 that the nozzle is used in the coating process immediately after the abnormality is detected, the movement to the coating processing unit 11b and the normal resist coating process are performed (step S8). By discharging the chemical solution from the nozzle in which an abnormality has occurred in the coating process, the dripping is removed and the liquid droplet does not easily drop. After the chemical solution is discharged, the processing program 71 determines that the nozzle has recovered from the abnormal state, and the coating process is continued. As described above, steps S7 and S8 are respectively performed, and the coating process is continued. For example, after a predetermined number of wafers W are processed, the user stops the apparatus 1 using the operation unit 75, for example, and performs maintenance. After the maintenance, for example, the user performs a predetermined process from the operation unit 75, stops the generation of an alarm, and restarts the coating process.

  The case where the user has selected to discharge the chemical solution to the nozzle bath has been described. However, when the user selects to stop the processing of the apparatus 1 instead of making such a selection, the above steps S1 to S5 are performed. Is executed, the control unit 7 transmits a control signal to each part of the resist coating apparatus 1, the movement of the drive mechanism 31 is stopped, and each process performed in the coating processing units 11a to 11c is stopped. Further, a control signal is transmitted to a control unit that controls the operation of the substrate transfer means, and the transfer of the wafer W to the resist coating apparatus 1 is stopped. Then, after the user performs maintenance on the apparatus 1, for example, by performing a predetermined process from the operation unit 75, the processing program 71 determines that the nozzle has recovered from the abnormal state, and the generation of the alarm stops and the application is performed. Processing resumes.

  According to said embodiment, the light projection part 53a which irradiates light along the sequence direction of the nozzles 41 and 42 which comprise the said collection nozzle 40 under the collection nozzle 40, and the light-receiving part 53b which light-receives the light And a control unit 7 that determines that liquid dripping or dripping has occurred when detecting a state in which the optical axis of the optical sensor 53 is blocked. The control unit 7 includes: Based on the determination result, the resist coating process is stopped by generating an alarm and discharging the chemical solution to the nozzle bus or stopping the drive mechanism 32. Accordingly, when the collective nozzle 40 moves on each of the coating processing units 11a to 11c, the chemical solution may drop on the wafer W or the spin chucks 12a to 12c, thereby preventing normal processing or forming particles. It can be suppressed. As a result, a decrease in product yield can be suppressed.

  Further, in the above embodiment, the analysis program 7A operates only when it is determined that the dripping and the drop of the liquid have occurred, and the analysis of the image transmitted from the camera 35 to the control unit 7 is performed. This is preferable because the load on the analysis program 7A can be suppressed. In the above example, the camera 35 is always turned on during the resist coating process in order to quickly capture an image when an abnormality occurs, and the image data is always transmitted to the control unit 7. In addition, the power may be turned on only when it is determined that a droplet has dropped, and image data may be transmitted to the control unit 7.

  Further, in the above embodiment, the tip of each nozzle constituting the collective nozzle 40 is collectively monitored by the optical sensor 53, and an alarm is output by detecting dripping and dropping of the chemical liquid. Since the movement of the arm 33 that supports the collective nozzle 40 is not affected by the monitoring by the optical sensor 53 during the normal resist coating process, it is possible to suppress a decrease in throughput due to the monitoring. . Further, the collective nozzle 40 is collectively monitored across the optical sensor 53 including a pair of light projecting portions 53a and light receiving portions 53b. Thus, by setting it as the structure which monitors a some nozzle with one sensor, the increase in the number of components of an apparatus can be suppressed. In the above embodiment, even if the number of nozzles and chemical supply lines 45 used in the process after the optical sensor 53 is attached is changed, the space to be monitored does not change. This is preferable because there is no need to perform work. In addition, the period at which an abnormality occurs for each nozzle is calculated, and an alarm is output based on that period to notify the user, so that the user can know the proper maintenance timing, and as a result, the yield can be reduced more reliably. Can be suppressed.

(Second Embodiment)
Next, another embodiment of the resist coating apparatus 1 will be described focusing on differences from the first embodiment. FIG. 13 is a perspective view of the resist supply unit 3 according to the second embodiment. A driving mechanism 81 including, for example, a cylinder 82 is provided at the tip 51 of the bracket 50, and the cylinder 82 has a vertical plate shape. A support portion 83 is connected, and the support portion 83 is horizontally provided with a tray 84 constituting a liquid receiving member.

  The drive mechanism 81 is fixed to the bracket 50, and the tray 84 moves integrally with the arm 33 in the Y direction, but does not move in the Z direction (vertical direction). By preventing the tray 84 from being lowered together with the arm 33 in this manner, the tray 84 blocks the downflow of the resist coating apparatus 1 immediately above the wafer W, affecting the coating film thickness and the number of particles generated on the wafer W. It prevents that. The tray 84 is configured to be movable in the X direction (extension direction of the arm 33) by the drive mechanism 81, and is shown in a retracted position away from just below the collective nozzle 40 shown in FIG. 14A and FIG. 14B. It moves between the liquid receiving position directly below the collecting nozzle 40. Usually, the receiving tray 84 stands by at the retracted position so as not to hinder the lifting and lowering of the collective nozzle 40 by the arm 33.

  In the second embodiment described above, a processing process in the case where dripping and droplet dropping occur will be described. After steps S1 and S2 are performed as in the first embodiment, the tray 84 is moved to the liquid receiving position, and steps S3 to S6 are similarly performed. If it is determined in step S6 that the nozzle in which the abnormality has occurred is not a nozzle used in the next coating process, the arm 33 is detected in step S1 while the tray 84 remains in the liquid receiving position. Move on the nozzle bath corresponding to the position. When the abnormal nozzle is located on the nozzle bath, the tray 84 is moved from the liquid receiving position to the retracted position, and then the arm 33 is lowered to discharge the chemical liquid to the nozzle bath in step S7. After the chemical solution is discharged, the processing program 71 determines that the nozzle has recovered from the abnormal state, and the coating process is continued while the tray 84 remains in the retracted position.

  Further, when it is determined in step S6 that the nozzle in which an abnormality has occurred is a nozzle used in the next coating process, the arm 33 moves to the coating processing unit 11 while the tray 84 remains in the liquid receiving position. When the abnormal nozzle is positioned on the wafer W of the coating processing unit 11, the tray 84 is moved from the liquid receiving position to the retracted position, and the normal processing for the wafer W in step S8 is performed. It is determined that the nozzle has recovered from the abnormal state, and the coating process for the next wafer W is continued while the tray 84 remains in the retracted position.

  In the second embodiment, since an alarm is output and the physical drop avoidance due to the movement of the tray 84 is performed, the same effects as in the first embodiment are obtained. Further, by positioning the tray 84 at the liquid receiving position only at the time of detecting an abnormality in this way, it is not necessary for the tray 84 to move to avoid the arm 33 every time the arm 33 moves up and down during normal processing. And the fall of the throughput by movement of this saucer 84 can be controlled. Since no abnormality of the nozzle is detected by the optical sensor 53 at the stage where the liquid dripping is formed at the front end of the collecting nozzle 40 and there is no problem as long as the tray 84 moves immediately under the nozzle before the liquid droplet falls, Thus, a sufficient effect can be obtained by adopting a configuration in which the tray 84 is normally positioned at the retracted position. Further, in the second embodiment, the tray 84 and a mechanism for operating the tray 84 are provided in the apparatus, and, for example, the viewpoint of suppressing the number of parts of the apparatus as compared with a case where means for preventing dripping is provided for each nozzle. To preferred.

  Further, in the second embodiment, after the alarm is generated, for example, the chemical liquid is not discharged to the nozzle bath, and the arm is located at the liquid receiving position while the arm is in the raised position, and is located at the retracted position while the arm is in the lowered position. As shown, the receiving tray 84 may be moved each time the arm 33 moves up and down to perform the coating process. In this case, for example, after a predetermined number of wafers have been processed, the user may perform maintenance work to return the nozzle to a normal state, and may be set so as to cancel such a movement operation of the tray 84. This is also effective because the nozzles can be prevented from falling on the wafer W and the spin chuck 12 as the nozzles move in the horizontal direction and pass over the coating processing units 11. As described above, in the second embodiment, the chemical solution is discharged to the nozzle bath or the maintenance work is performed, and the tray 84 is moved until the nozzles 41 and 42 recover from the abnormal state to the normal state. After the recovery, the tray 84 is moved again to the retracted position, and the subsequent coating process is preferably performed because the reduction in throughput due to the movement of the tray 84 can be suppressed. In each embodiment, the nozzle baths and the coating processing units may be arranged in the circumferential direction instead of the linear direction as described above, and the arm 33 supporting the collective nozzle 40 may move in the arrangement direction. Further, the optical sensor is not limited to the transmission type, and the optical axis may be formed using a reflection type.

  Hereinafter, the coating and developing apparatus 110 in which the resist coating apparatus 1 is incorporated will be described. FIG. 15 is a plan view of a resist pattern forming system in which an exposure apparatus C4 is connected to the coating and developing apparatus 110, and FIG. 16 is a perspective view of the system. FIG. 17 is a longitudinal sectional view of the coating and developing apparatus 110. The coating / developing apparatus 110 is provided with a carrier block C1, and the transfer arm 112 takes out the wafer W from the sealed carrier C mounted on the mounting table 111 and transfers it to the processing block C2. The transfer arm 112 is configured to receive the processed wafer W from C2 and return it to the carrier C. The carrier C includes a large number of wafers W, and each wafer W is sequentially transferred to the processing block C2.

  As shown in FIG. 16, the processing block C2 is a first block (DEV layer) B1 for performing development processing and a first processing for forming an antireflection film formed under the resist film in this example. 2 block (BCT layer) B2, a third block (COT layer) B3 for applying a resist film, a fourth block for forming an antireflection film formed on the upper layer side of the resist film ( ITC layer) B4 is laminated in order from the bottom.

  Each layer of the processing block C2 is configured similarly to a plan view. The third block (COT layer) B3 will be described as an example. The COT layer B3 is a resist coating module 113 for forming a resist film as a coating film, and a pre-process of processing performed in the resist coating module 113. And a shelf unit U1 to U4 constituting a heating / cooling system processing module group for performing post-processing, and a wafer between the resist coating module and the heating / cooling system processing module group. And a transfer arm A3 for delivering W. The resist coating module 113 corresponds to the resist coating apparatus 1 described above, and the transfer arm A3 corresponds to the substrate transfer means described above.

  The shelf units U1 to U4 are arranged along the transfer region R1 in which the transfer arm A3 moves, and are configured by stacking the heating module and the cooling module, respectively. The heating module includes a heating plate for heating the mounted wafer, and the cooling module includes a cooling plate for cooling the mounted wafer.

  For the second block (BCT layer) B2 and the fourth block (ITC layer) B4, an antireflection film forming module and a protective film forming module corresponding to the resist coating module are provided, respectively. The coating solution is the same as the COT layer B3 except that a chemical solution for forming an antireflection film and a chemical solution for forming a protective film are supplied to the wafer W, respectively.

  For the first block (DEV layer) B1, development modules corresponding to the resist coating modules are stacked in two stages in one DEV layer B1, and each development module 113 corresponds to the development device 2 described above. In addition, three development processing units and the nozzles described above are included in a common housing. The DEV layer B1 is provided with shelf units U1 to U4 that constitute a heating / cooling system processing module group for performing pre-processing and post-processing of the developing module 113. In the DEV layer B1, a transfer arm A1 for transferring the wafer W to the two-stage developing module and the heating / cooling processing module is provided. That is, the transport arm A1 is shared by the two-stage development module.

  Further, the processing block C2 is provided with a shelf unit U5 as shown in FIGS. 15 and 17, and the wafer W from the carrier block C1 is one transfer unit of the shelf unit U5, for example, a second block (BCT layer). It is sequentially conveyed to the corresponding delivery unit CPL2 of B2. The transfer arm A2 in the second block (BCT layer) B2 receives the wafer W from the transfer unit CPL2 and transfers it to each unit (antireflection film forming module and heating / cooling processing unit group). Thus, an antireflection film is formed on the wafer W.

  Thereafter, the wafer W is transferred to the transfer unit BF2 of the shelf unit U5, the transfer arm D1, and the transfer unit CPL3 of the shelf unit U5, where the temperature is adjusted to, for example, 23 ° C., and then the third block ( COT layer) B3, and a resist film is formed by a resist coating module. Further, the wafer W is transferred to the transfer unit BF3 in the shelf unit U5 through the transfer arm A3 → the transfer unit BF3 of the shelf unit U5 → the transfer arm D1. The wafer W on which the resist film is formed may further have a protective film formed in the fourth block (ITC layer) B4. In this case, the wafer W is transferred to the transfer arm A4 via the transfer unit CPL4, and after the protective film is formed, the wafer W is transferred to the transfer unit TRS4 by the transfer arm A4.

  On the other hand, on the upper part in the DEV layer B1, a shuttle 117 is provided as a dedicated transfer means for directly transferring the wafer W from the transfer unit 115 provided in the shelf unit U5 to the transfer unit 116 provided in the shelf unit U6. It has been. The wafer W on which the resist film and further protective film are formed is transferred from the transfer units BF3 and TRS4 to the transfer unit 115 via the transfer arm D1, and is directly transferred from here to the transfer unit 116 of the shelf unit U6 by the shuttle 117. The data is taken into the interface block C3. Note that the delivery unit with CPL in FIG. 17 also serves as a cooling unit for temperature control, and the delivery unit with BF also serves as a buffer unit on which a plurality of wafers W can be placed.

  Next, the wafer W is transferred to the exposure apparatus C4 by the interface arm 118, and after a predetermined exposure process is performed here, the wafer W is placed on the transfer unit TRS6 of the shelf unit U6 and returned to the processing block C2. The returned wafer W is subjected to development processing in the first block (DEV layer) B1, and transferred to the transfer unit TRS1 of the shelf unit U5 by the transfer arm A1. Thereafter, it is returned to the carrier C via the delivery arm 112.

  In the above example, the liquid processing apparatus of the present invention is configured as a resist coating apparatus. For example, the coating and developing apparatus 1 includes a developing module and an antireflection film forming module, and each module is replaced with a resist. The present invention may be configured as an apparatus for supplying a processing liquid other than that to the substrate.

DESCRIPTION OF SYMBOLS 1 Resist coating apparatus 11a-11c Coating processing part 12a-12c Spin chuck 21a-21c Opening part 3 Resist supply part 30 Nozzle bus 33 Arm 40 Collecting nozzle 41 Resist discharge nozzle 42 Thinner discharge nozzle 50 Bracket 53 Optical sensor 66a-66c Nozzle bus 7 Control Part 71 Processing program 7A Analysis program

Claims (12)

A plurality of liquid processing units each configured by providing a substrate holding unit for horizontally holding a substrate in a cup in which an opening is formed on the upper side, arranged in a row in a lateral direction,
A plurality of processing liquid nozzles provided on a support body along the arrangement direction of the liquid processing units in order to supply different types of processing liquids to the substrates, respectively, in common for the plurality of liquid processing units;
A nozzle bath provided for waiting the processing liquid nozzle;
A support driving mechanism for moving each processing liquid nozzle along the row of liquid processing units via the support between the upper region of each of the liquid processing units and the nozzle bath;
An optical sensor that forms an optical axis along the arrangement direction of the processing liquid nozzles below each processing liquid nozzle,
A means for determining that a dripping or dripping of the treatment liquid has occurred when detecting a state in which the optical axis is blocked by the optical sensor when each treatment liquid nozzle is not used;
Coping means for performing coping operation based on the output of the determination signal;
Bei to give a,
The coping means is an imaging means for imaging the tip of the treatment liquid nozzle;
Based on the imaging result by the imaging means, a judgment means for judging which treatment liquid nozzle has dripped or dripping the treatment liquid;
A liquid processing apparatus comprising: a determination unit configured to perform determination based on an output of the determination signal . The coping means is an extension line in the arrangement direction of the liquid treatment units or a drainage region provided between the liquid treatment units in the arrangement direction;
A control means for outputting a control signal so as to discharge the processing liquid from the processing liquid nozzle determined that the dripping or dripping of the processing liquid has occurred in the drainage region by the determination means;
The liquid processing apparatus according to claim 1, comprising: The liquid processing apparatus according to claim 2, wherein the drainage region is configured by the nozzle bath. The coping means includes a liquid receiving member for receiving dripping and dropped liquid droplets from each processing liquid nozzle,
Moving means for moving the liquid receiving member from the retreat area outside the liquid receiving area to the liquid receiving area for receiving liquid below the liquid processing nozzle when liquid dripping or dripping is detected; the liquid processing apparatus according to any one of claims 1 to 3, characterized in that.   The liquid processing apparatus according to claim 1, wherein the coping means includes stop means for stopping the movement of the support driving mechanism and the discharge of the processing liquid from the processing liquid nozzle.   6. The liquid processing apparatus according to claim 1, wherein the coping means includes an alarm generation means. It said support member driving mechanism is configured to raise and lower the support, wherein the light sensor is claims 1, characterized in that provided on the fixed portion that is fixed relative to the support drive mechanism 6 The liquid processing apparatus as described in any one of these. Each of the liquid processing units includes a substrate holding unit that horizontally holds the substrate in a cup in which an opening is formed on the upper side, and is shared by a plurality of liquid processing units arranged in a row in the lateral direction. Supplying different types of processing liquids to the substrate from a plurality of processing liquid nozzles provided on the support along the arrangement direction of
A step of waiting the processing liquid nozzle in the nozzle bath; and
A step of moving each processing liquid nozzle along a row of the liquid processing units via the support between each upper region of the liquid processing unit and the nozzle bus by a support driving mechanism;
Forming an optical axis along the arrangement direction of the processing liquid nozzles below each processing liquid nozzle by an optical sensor;
When detecting the state where the optical axis is blocked by the optical sensor when each processing liquid nozzle is not used, determining that dripping or dripping of the processing liquid has occurred, and outputting a determination signal;
Coping means for performing coping operation based on the output of the determination signal;
Bei to give a,
The step of performing the coping operation is a step of imaging the tip of the processing liquid nozzle by an imaging unit;
A step of determining, by a determination unit, which treatment liquid nozzle has dripped or dripped a treatment liquid based on an imaging result by the imaging unit;
A step of performing a determination by a determination unit based on the output of the determination signal;
The liquid processing method characterized by including . Processing is performed from a processing liquid nozzle that has been determined by the determination means that liquid dripping or dripping of processing liquid has occurred in the drain line provided between the liquid processing sections in the arrangement direction or on an extension line in the arrangement direction of the liquid processing sections A step of discharging the liquid;
A step of outputting a control signal from the control means in order to discharge the processing liquid in such a manner;
The liquid processing method of Claim 8 characterized by the above-mentioned. The step of issuing the countermeasure output includes:
Imaging the tip of the treatment liquid nozzle with an imaging means;
Determining which treatment liquid nozzle or dripping of treatment liquid has occurred based on imaging by the imaging means only when the treatment means detects dripping or dripping of the treatment liquid; and
Claim, characterized in that the processing liquid nozzles dripping of liquid dripping or the processing liquid is determined to have occurred and a step of outputting a control signal by the control means so as to discharge the processing liquid into the drainage area 9 The liquid processing method as described. The step of issuing the countermeasure output includes:
A step for receiving liquid dripping from each treatment liquid nozzle and a dropped liquid droplet by a liquid receiving member;
Moving the liquid receiving member from the retreat area outside the liquid receiving area to the liquid receiving area for receiving the liquid below the liquid processing nozzle by the moving means when liquid dripping or dripping is detected;
Liquid processing method according to any one of claims 8 to 10, characterized in that it comprises a. A storage medium storing a computer program used in a liquid processing apparatus that performs liquid processing on a substrate,
A storage medium characterized in that the computer program is for carrying out the liquid processing method according to any one of claims 8 to 11 .

Images