JP5303997B2 - ワイヤアンテナを用いたrfidタグインレットの製造方法 - Google Patents
ワイヤアンテナを用いたrfidタグインレットの製造方法 Download PDFInfo
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- JP5303997B2 JP5303997B2 JP2008095837A JP2008095837A JP5303997B2 JP 5303997 B2 JP5303997 B2 JP 5303997B2 JP 2008095837 A JP2008095837 A JP 2008095837A JP 2008095837 A JP2008095837 A JP 2008095837A JP 5303997 B2 JP5303997 B2 JP 5303997B2
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- wire
- wire antenna
- semiconductor chip
- antenna
- rfid tag
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/45124—Aluminium (Al) as principal constituent
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/4516—Iron (Fe) as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/4554—Coating
- H01L2224/45565—Single coating layer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/4554—Coating
- H01L2224/45599—Material
- H01L2224/4569—Material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/4813—Connecting within a semiconductor or solid-state body, i.e. fly wire, bridge wire
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
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Description
Dタグのサイズが大きく厚くなることあるいはモジュール加工のためにコストが高くなる等の問題がある。そのため、半導体チップ上の接続用バンプにワイヤアンテナを直接に熱圧接する技術が検討されている(例えば、特許文献2参照)。
半導体チップに形成された接続用バンプと接合するワイヤアンテナの端部に、予め熱間圧延することによりワイヤを被覆する絶縁樹脂を溶融して除去し、かつ、平行平面部分を形成する工程と、前記平行平面部分の一方の平面と前記半導体チップの接続用バンプとを接触させた上で、接続用バンプとワイヤアンテナを接合する工程。
ンテナ1を敷設する。ワイヤアンテナの外形形状は図1に示した。両端をループの内側に引き出して半導体チップ16の接続用バンプ3と接合させる。但し、必ずしもインレット基材を使用する必要はなく、用途によっては、ワイヤアンテナ1と半導体チップ2を接続したものを熱可塑性樹脂で直接被覆して使用することも可能である。
2・・・・半導体チップ
3・・・・接続用バンプ
4・・・・ワイヤアンテナ端部
10・・・・RFIDタグ
11・・・・タック紙
12・・・・粘着剤
13・・・・RFIDタグインレット
14・・・・インレット基材
15・・・・アンテナパターン
16・・・・半導体チップ
17・・・・セパレート紙
Claims (1)
- 少なくとも以下の工程を具備することを特徴とする銅線をポリウレタン製の絶縁皮膜とポリアミド製の融着皮膜で被覆された0.1mm徑のワイヤアンテナを用いたRFIDタグインレットの製造方法。
半導体チップに形成された接続用バンプと接合するワイヤアンテナの端部に、予め熱間圧延することによりワイヤを被覆する絶縁樹脂を溶融して除去し、かつ、平行平面部分を形成する工程と、
及び前記平行平面部分の一方の平面と前記半導体チップの接続用バンプとを接触させた上で、接続用バンプとワイヤアンテナを接合する工程。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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JP2008095837A JP5303997B2 (ja) | 2008-04-02 | 2008-04-02 | ワイヤアンテナを用いたrfidタグインレットの製造方法 |
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JP2008095837A JP5303997B2 (ja) | 2008-04-02 | 2008-04-02 | ワイヤアンテナを用いたrfidタグインレットの製造方法 |
Publications (2)
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JP2009253412A JP2009253412A (ja) | 2009-10-29 |
JP5303997B2 true JP5303997B2 (ja) | 2013-10-02 |
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JP2008095837A Active JP5303997B2 (ja) | 2008-04-02 | 2008-04-02 | ワイヤアンテナを用いたrfidタグインレットの製造方法 |
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Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02224348A (ja) * | 1989-02-27 | 1990-09-06 | Fuji Electric Co Ltd | 半導体装置 |
JP3550551B2 (ja) * | 1998-01-27 | 2004-08-04 | 日立マクセル株式会社 | Icチップとコイルの接続体及びicチップとコイルの接続方法 |
JP2001195554A (ja) * | 2000-01-07 | 2001-07-19 | Hitachi Maxell Ltd | Icモジュール及びその製造方法 |
JP2003007758A (ja) * | 2001-06-20 | 2003-01-10 | Mitsubishi Electric Corp | 半導体装置用ボンディングワイヤの接合方法 |
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