JP5302533B2 - Light emitting device - Google Patents

Description

  The present invention relates to a light emitting device using an LED chip (light emitting diode chip).

  Conventionally, light emission in which a desired mixed color light (for example, white light) is obtained by combining an LED chip and a phosphor that emits light of a light emission color different from that of the LED chip when excited by light emitted from the LED chip. Research and development of the apparatus is performed in various places (for example, refer to Patent Document 1).

Here, in Patent Document 1, as shown in FIG. 13, a mounting substrate 120 made of a white alumina ceramic substrate in which a recess 120a is formed on one surface and a pair of lead terminals 123 and 123 are integrally formed; The LED chip 100 die-bonded to one of the pair of lead terminals 123 exposed on the inner bottom surface of the housing recess 120a of the mounting substrate 120 and electrically connected to the other via the bonding wire 114, and the LED chip 100 The LED chip 100 is surrounded by a housing recess 120a of the mounting substrate 120 formed of a transparent resin (epoxy resin) containing a phosphor that is excited by light emitted from the LED chip 100 and emits light having a longer wavelength than the LED chip 100. Color conversion unit 170 formed in a bowl shape, LED chip 100, bonding wire 1114 And a sealing portion 150 made of a transparent resin (epoxy resin) filled in the housing recess 120a of the mounting substrate 120 so as to cover the color conversion portion 170, and light from the LED chip 100 formed on the sealing portion 150 A reflective member 160 made of a white silicone resin that reflects light toward the color conversion unit 170 side, and a lens function unit 180 formed in a convex lens shape with a transparent resin (epoxy resin) on the sealing unit 150 so as to cover the reflective member 160. A light-emitting device provided with
Japanese Patent Laying-Open No. 2005-347467 (paragraphs [0051]-[0059] and FIG. 2)

  However, in the light emitting device having the configuration shown in FIG. 13, the color conversion unit 170 is formed in a bowl shape, and the thickness of the color conversion unit 170 varies depending on the location. Therefore, from the LED chip 100 that passes through the color conversion unit 170 Due to the difference in the optical path length of the light, color unevenness occurs, or the heat generated in the color conversion unit 170 cannot be dissipated uniformly, resulting in a temperature difference in the color conversion unit 170 or a temperature rise of the phosphor. Color unevenness occurs due to the temperature quenching. In the light emitting device having the configuration shown in FIG. 13, since the mounting substrate 120 is formed using an alumina ceramic substrate, heat generated in the LED chip 100 and heat generated in the color conversion unit 170 can be efficiently radiated. could not.

  The present invention has been made in view of the above reasons, and an object of the present invention is to provide a light-emitting device that can suppress the temperature rise of the LED chip and the color conversion unit and can suppress the occurrence of color unevenness. There is.

The invention according to claim 1 is excited by the LED chip, a plate-shaped heat transfer plate made of a heat conductor material and having the LED chip mounted on one surface side, and at least light emitted from the LED chip. A color converter formed of a phosphor that emits light having a wavelength longer than that of the LED chip and disposed so as to surround the LED chip in a plan view, and spaced apart from the LED chip in the thickness direction of the LED chip. A reflection part that reflects light emitted from the LED chip toward the color conversion part, the LED chip is mounted on the heat transfer plate via a submount member, and the color conversion part is The heat plate is provided with a constant thickness on the one surface side and is thermally coupled to the heat transfer plate.

According to the invention, the LED chip is mounted on one surface of the heat transfer plate made of a thermally conductive material, the heat transfer color conversion unit is arranged in the form of Te viewed odor surrounding the L ED chip since provided with a constant thickness on the one surface side of the plate, the said L ED chip and heat generated in each of the color conversion unit can be efficiently dissipated from the heat transfer plate L ED chip it is possible to suppress the occurrence of color unevenness with an increase in temperature of and the color conversion unit can be suppressed. According to this invention, since the LED chip is mounted on the heat transfer plate via a submount member, the heat generated by the LED chip is transferred via the submount member and the heat transfer plate. It is possible to dissipate heat efficiently.

  According to a second aspect of the present invention, in the first aspect of the present invention, the color conversion unit and the heat transfer plate are formed of a material having a higher reflectance to visible light than the heat transfer plate, and are emitted from the LED chip. A reflection layer is provided that reflects light transmitted through the color conversion unit or light emitted from the phosphor toward the heat transfer plate.

  According to this invention, it is possible to reduce the thickness of the color conversion unit, to further suppress the temperature rise of the color conversion unit, and to further reduce the temperature difference in the color conversion unit. It becomes.

  According to a third aspect of the present invention, in the second aspect of the present invention, the heat transfer plate has a fine concavo-convex structure portion formed in a portion overlapping the color conversion portion on the one surface side, and the reflective layer is formed on the fine concavo-convex structure portion. And the color conversion part is laminated on the reflective layer.

  According to the present invention, light emitted from the LED chip and transmitted through the color conversion unit and light emitted from the phosphor to the heat transfer plate side can be extracted to the outside more efficiently.

According to a fourth aspect of the present invention, in the first to third aspects of the invention, a sealing portion made of a translucent material that seals the LED chip and the color conversion portion on the one surface side of the heat transfer plate. wherein the sealing unit is characterized in that the outer surface becomes formed in a parabolic rotation.

  According to this invention, it is possible to increase the light extraction efficiency to the outside.

  According to a fifth aspect of the present invention, in the first to fourth aspects of the invention, the reflecting portion is provided in a direction that allows light from the color conversion portion side to pass therethrough and does not allow direct light from the LED chip to pass. It is characterized by having a slit.

  According to this invention, the reflection part has the slit penetrating in the direction that allows the light from the color conversion part side to pass through and does not allow the direct light from the LED chip to pass through. It is possible to prevent direct light from the LED chip from being emitted while reducing the shadow area by the portion.

  According to a sixth aspect of the present invention, in the first to fourth aspects of the present invention, the direct light from the LED chip side is disposed around the reflecting portion and is emitted from the light emitting surface of the color converting portion. And a wavelength selection filter that transmits light from the phosphor and indirect light from the LED chip.

  According to the present invention, the light from the phosphor disposed around the reflecting portion, reflects the direct light from the LED chip side, and is emitted from the light emitting surface of the color conversion portion, and indirectly from the LED chip. By including the wavelength selection filter that transmits light, it is possible to prevent direct light from the LED chip from being emitted while reducing the shadowed area by the reflecting portion.

  According to the first aspect of the present invention, there is an effect that it is possible to suppress the temperature rise of the LED chip and the color conversion unit and to suppress the occurrence of color unevenness.

(Embodiment 1)
The light emitting device in the present embodiment has a LED chip 10 and a wiring pattern (conductor pattern) 23, 23 for supplying power to the LED chip 10 on one surface side, and the LED chip 10 is mounted on the one surface side. The plate-shaped mounting substrate 20 and a light-transmitting material containing a phosphor that is excited by light emitted from the LED chip 10 and emits light having a longer wavelength than the LED chip 10 are used. The color conversion unit 70 disposed so as to be separated from the LED chip 10 and the sealing unit 50 made of a translucent material that seals the LED chip 10 and the color conversion unit 70 on the one surface side of the mounting substrate 20. And a reflection unit 60 that is disposed apart from the LED chip 10 in the thickness direction of the LED chip 10 and reflects light emitted from the LED chip 10 toward the color conversion unit 70 side. It is equipped with a.

  The LED chip 10 is a GaN-based blue LED chip that emits blue light, and uses an n-type SiC substrate having a lattice constant and a crystal structure close to GaN as compared to a sapphire substrate and having conductivity as a crystal growth substrate. In addition, a light-emitting portion formed of a GaN-based compound semiconductor material and having a double-heterostructure, for example, on the main surface side of the SiC substrate is grown by an epitaxial growth method (for example, MOVPE method). The growth substrate is not limited to the SC substrate, and may be a GaN substrate, for example. Here, the LED chip 10 has an anode electrode (not shown) formed on one surface side (upper surface side in FIG. 1B) and a cathode electrode on the other surface side (lower surface side in FIG. 1B). Is formed. The cathode electrode and the anode electrode are composed of a laminated film of a Ni film and an Au film, but the material of the cathode electrode and the anode electrode is not particularly limited, and a material capable of obtaining good ohmic characteristics For example, Al or the like may be employed. Further, the structure of the LED chip 10 is not particularly limited. For example, a light emitting unit is formed by supporting a light emitting unit after epitaxially growing the light emitting unit or the like on the main surface side of the crystal growth substrate. Alternatively, a substrate obtained by removing the crystal growth substrate or the like may be used.

  The mounting substrate 20 is a rectangular plate-like (square shape in this embodiment) heat transfer plate 21 made of a first heat conductive material (for example, Cu), and is smaller than the heat transfer plate 21 and the LED chip 10. A rectangular plate made of a second thermal conductive material (for example, AlN) formed in a larger plane size and joined to one surface side (the upper surface side in FIG. 1B) of the heat transfer plate 21 In the embodiment, the above-described wiring pattern 23 that is electrically connected to the LED chip 10 is formed on one surface side of the organic insulating base material 22a made of a polyimide film and the submount member 30 having a square shape. It is composed of two belt-like wiring boards 22 and 22 embedded on the one surface side of the heat transfer plate 21, and the LED chip 10 is bonded to the side opposite to the heat transfer plate 21 side in the submount member 30. ing. Accordingly, in the present embodiment, the LED chip 10 is mounted on the one surface side of the heat transfer plate 21, and the heat generated in the LED chip 10 is transmitted to the submount member 30 and the heat transfer plate without passing through the wiring boards 22 and 22. Heat is transferred to the hot plate 21. Here, the wiring boards 22 and 22 are embedded in the heat transfer plate 21 so that the surfaces of the wiring patterns 23 and 23 are substantially flush with the one surface of the heat transfer plate 21. In addition, as a material of the organic insulating base material 22a, FR4, FR5, paper phenol, or the like may be employed.

  The two wiring boards 22 are arranged so as to sandwich the submount member 30 on one diagonal extension line of the submount member 30 in plan view, and each wiring pattern 23 is bonded to the side close to the submount member 30. A rectangular terminal portion 23 a to which the wire 14 is connected is provided, and a circular external connection electrode portion 23 b is provided on the side far from the submount member 30. The wiring pattern 23 of the wiring board 22 is composed of a laminated film of a Cu film, a Ni film, and an Au film.

  The submount member 30 includes a stress relaxation function for relaxing stress acting on the LED chip 10 due to a difference in linear expansion coefficient between the LED chip 10 and the heat transfer plate 21, and heat generated by the LED chip 10. 21 has a heat conduction function of transferring heat to a wider range than the chip size of the LED chip 10. Therefore, in the light emitting device of the present embodiment, since the LED chip 10 is mounted on the heat transfer plate 21 via the submount member 30, the heat generated by the LED chip 10 is transferred to the submount member 30 and the heat transfer plate 21. In addition, heat can be efficiently radiated, and stress acting on the LED chip 10 due to a difference in linear expansion coefficient between the LED chip 10 and the heat transfer plate 21 can be reduced.

  As the second heat conductive material of the submount member 30, AlN having higher thermal conductivity and insulation than alumina is adopted, and the LED chip 10 has the cathode electrode in the submount member 30. It is electrically connected to one wiring pattern 23 via a conductor pattern (not shown) and a bonding wire (not shown) provided on the surface of the LED chip 10 and connected to the cathode electrode, and the anode electrode It is electrically connected to the other wiring pattern 23 via the bonding wire 14. Here, the LED chip 10 and the submount member 30 are eutectic bonded by AuSn, and the submount member 30 and the heat transfer plate 21 are also eutectic bonded by AuSn, but in any eutectic bonding, A metal layer made of Au is formed in advance on the bonding surface.

  In the present embodiment, Cu is adopted as the first heat conductive material of the heat transfer plate 21 as described above, but not limited to Cu, for example, Al may be adopted. Further, the second heat conductive material of the submount member 30 is not limited to AlN, and any material may be used as long as the linear expansion coefficient is relatively close to the material of the crystal growth substrate of the LED chip 10 and the heat conductivity is high. The submount member 30 has the above-described heat conduction function, and the area of the surface of the heat transfer plate 21 on the LED chip 10 side is sufficiently larger than the area of the surface of the LED chip 10 on the heat transfer plate 21 side. Larger is desirable.

  In addition, if a reflective film that reflects the light emitted from the LED chip 10 is formed around the bonding portion with the LED chip 10 on the surface of the submount member 30 on the side to which the LED chip 10 is bonded, the LED chip 10 is formed. It is possible to prevent the light radiated from the side surface from being absorbed by the submount member 30 and to further increase the light extraction efficiency to the outside. Here, the reflective film may be constituted by a laminated film of a Ni film and an Al film, for example.

  The planar shape of the color conversion unit 70 is a donut shape, the inner peripheral line is a rectangular shape (in the present embodiment, a square shape) along the outer peripheral line of the submount member 30, and the outer peripheral line is the heat transfer plate 21. It has a circular shape located inside the outer peripheral line.

  Here, the color conversion unit 70 is provided with a constant thickness on the one surface side of the mounting substrate 20 and is thermally coupled to the electric heating plate 21. Here, a part of the color conversion unit 70 is formed on the wiring substrate 22, but most of the color conversion unit 70 is provided on the one surface side of the heat transfer plate 21 with a constant thickness and is thermally coupled to the heat transfer plate 21. . By the way, the light emitting device of this embodiment is formed of a material (for example, Al) having a higher reflectance with respect to visible light than the heat transfer plate 21 between the color conversion unit 70 and the heat transfer plate 21. A reflection layer 40 is provided to reflect the light emitted and transmitted through the color conversion unit 70 or the light emitted from the phosphor to the heat transfer plate 21 side. When the color conversion unit 70 is thick, the reflection layer 40 is provided. 40 is not necessarily provided.

  The color conversion unit 70 employs a silicone resin as the translucent material, and employs a yellow phosphor as the phosphor. However, the translucent material of the color conversion unit 70 is not limited to the silicone resin, for example, acrylic Resin, glass, organic / inorganic hybrid materials in which organic and inorganic components are mixed and combined at the nm level or molecular level may be employed, and the phosphor of the color conversion unit 70 is not limited to a yellow phosphor, but a color A plurality of types of phosphors may be used for the purpose of adjusting and improving the color rendering properties. For example, white light with high color rendering properties can be obtained by using a red phosphor and a green phosphor. Here, when a plurality of types of phosphors are used, the phosphor is not necessarily a combination of phosphors having different emission colors, and for example, a plurality of types of phosphors having an emission color of yellow and different emission spectra may be combined. Moreover, the color conversion part 70 should just be formed with the fluorescent substance at least, and may be formed only with fluorescent substance, without using translucent materials, such as a silicone resin.

  Further, the above-described sealing portion 50 is formed in a hemispherical shape on the one surface side of the mounting substrate 20, and the reflection portion 60 is provided on the top. Here, the sealing portion 50 has a circular outer peripheral line in plan view, and is formed so as to substantially coincide with the outer peripheral line of the color conversion unit 70. The shape of the sealing portion 50 is not limited to a hemispherical shape, and may be appropriately set according to a desired light distribution characteristic of the light emitting device. For example, a semi-elliptical shape may be used. The outer peripheral shape of the part 70 may be an elliptical shape. Moreover, the shape of the surface facing the LED chip 10 is designed so that the light emitted from the LED chip 10 is reflected to the color conversion unit 70 side.

  As a translucent material of the sealing part 50, although silicone resin is used, not only silicone resin but acrylic resin, glass, etc. may be used, for example, if glass is used, heat dissipation can be improved. In addition, weather resistance and heat resistance can be improved. Moreover, as a material of the reflection part 60, for example, a white silicone resin, a liquid crystal polymer resin, a ceramic, a metal, or the like may be employed.

  By the way, in the manufacture of the light emitting device of the present embodiment, for example, as shown in FIGS. 2, 3, and 4, a recess formed in a hemispherical molded product 50 a constituting most of the sealing portion 50. 51 and the one surface side of the mounting substrate 20 are coated with liquid translucent materials (for example, silicone resins) 50c and 50b that become a part of the sealing portion 50, and then the molded product 50a and the mounting substrate 20, the molded product 50 a is positioned and then the liquid translucent materials 50 c and 50 b are cured to thereby form the sealing portion 50 in which the molded product 50 a and the translucent materials 50 c and 50 b are integrated. What is necessary is just to form. Here, in FIG. 2, the opening shape of the recess 51 of the molded product 50 a is substantially the same as the outer peripheral shape of the color conversion unit 70, and the liquid translucent material 50 b applied to the one surface side of the mounting substrate 20 is The LED chip 10, the submount member 30 and the color conversion unit 70 are applied so as to cover. In FIG. 3, the opening shape of the recess 51 of the molded product 50 a is substantially the same as the inner peripheral shape of the color conversion unit 70, and the liquid translucent material 50 b applied to the one surface side of the mounting substrate 20 is It is applied so as to cover the LED chip 10 and the submount member 30. In FIG. 4, the opening shape of the recess 51 of the molded product 50 a is substantially the same as the inner peripheral shape of the color conversion unit 70, and the color conversion unit 70 and the reflection are formed around the recess 51 of the molded product 50 a. The layer 40 is provided, and the liquid translucent material 50 b applied to the one surface side of the mounting substrate 20 is applied so as to cover the LED chip 10 and the submount member 30. By employing such a manufacturing method of FIGS. 2 to 4, it is possible to suppress the generation of voids in the sealing portion 50, and to prevent disconnection of the bonding wire 14 and a decrease in light output. 2 to 4, the reflecting portion 60 is integrally formed with the molded product 50a. However, the reflecting portion 60 may be bonded to the molded product 50a.

  In the light emitting device of the present embodiment described above, the LED chip 10 is mounted on the one surface side of the heat transfer plate 21 made of the first heat conductive material, and the color conversion unit 70 is seen in plan view. Is disposed at a certain thickness on the one surface side of the heat transfer plate 21 so that the heat generated in each of the LED chip 10 and the color conversion unit 70 is transferred to the heat transfer plate 21. Therefore, it is possible to efficiently dissipate heat, and it is possible to suppress the temperature rise of the LED chip 10 and the color conversion unit 70 and to suppress the occurrence of color unevenness. In the light emitting device according to the present embodiment, as described above, the reflective layer 40 is provided between the color conversion unit 70 and the heat transfer plate 21, so that the thickness of the color conversion unit 70 can be reduced. Thus, the temperature increase of the color conversion unit 70 can be further suppressed, and the temperature difference in the color conversion unit 70 can be further reduced.

(Embodiment 2)
The basic configuration of the light emitting device of the present embodiment is substantially the same as that of the first embodiment, and is different in that the outer surface 52 of the sealing portion 50 is formed in the shape of a paraboloid as shown in FIG. Here, the outer diameter of the sealing part 50 gradually increases as the distance from the mounting substrate 20 increases. In addition, the same code | symbol is attached | subjected to the component similar to Embodiment 1, and description is abbreviate | omitted.

  In the light emitting device of the present embodiment, the light emitted from the color conversion unit 70 can be efficiently reflected toward the light emitting surface 53 side of the sealing unit 50, and the light extraction efficiency to the outside can be increased.

(Embodiment 3)
The basic configuration of the light emitting device of the present embodiment is substantially the same as that of the second embodiment. As shown in FIG. 6, the central portion of the sealing portion 50 is recessed compared to the peripheral portion, and the reflecting portion 60, the LED chip 10, and the like. The difference is that the distance between is shorter. In addition, the same code | symbol is attached | subjected to the component similar to Embodiment 2, and description is abbreviate | omitted.

  Therefore, in the light emitting device of this embodiment, the light emitted from the LED chip 10 can be efficiently incident on the color conversion unit 70, and the light extraction efficiency to the outside can be increased.

(Embodiment 4)
The basic configuration of the light emitting device of the present embodiment is substantially the same as that of the first embodiment. As shown in FIG. 7, as shown in FIG. The structure part 21a is formed, the reflective layer 40 is laminated on the fine concavo-convex structure part 21a, and the color conversion part 70 is laminated on the reflective layer 40. In addition, the same code | symbol is attached | subjected to the component similar to Embodiment 1, and description is abbreviate | omitted.

  Therefore, in the light emitting device of the present embodiment, by appropriately setting the period (pitch) of the fine concavo-convex structure, light emitted from the LED chip 10 and transmitted through the color conversion unit 70 or transmitted from the phosphor of the color conversion unit 70 is transmitted. It becomes possible to extract the light radiated to the heat plate 21 side to the outside more efficiently.

(Embodiment 5)
The basic configuration of the light emitting device of the present embodiment is substantially the same as that of the third embodiment. As shown in FIG. 8, as shown in FIG. The structure part 21a is formed, the reflective layer 40 is laminated on the fine concavo-convex structure part 21a, and the color conversion part 70 is laminated on the reflective layer 40. In addition, the same code | symbol is attached | subjected to the component similar to Embodiment 3, and description is abbreviate | omitted.

  Therefore, in the light emitting device of the present embodiment, by appropriately setting the period (pitch) of the fine concavo-convex structure, light emitted from the LED chip 10 and transmitted through the color conversion unit 70 or transmitted from the phosphor of the color conversion unit 70 is transmitted. It becomes possible to extract the light radiated to the heat plate 21 side to the outside more efficiently. In the second embodiment, the same fine uneven structure portion 21a as in the present embodiment may be provided.

(Embodiment 6)
The basic configuration of the light emitting device of the present embodiment is substantially the same as that of the second embodiment. As shown in FIG. 9, the light emitted from the color conversion unit 70 is disposed on the mounting substrate 20 so as to surround the sealing portion 50. Is provided on the light emitting surface 53 side of the sealing portion 50, and the reflector 80 has an inner collar piece 81 extending inwardly from an edge on the mounting substrate 20 side, The difference is that the inner collar piece 81 of the reflector 80 is fixed to the heat transfer plate 21, and the color conversion portion 70 is formed with a constant thickness on the surface of the inner collar piece 81 opposite to the mounting substrate 20 side. In addition, the same code | symbol is attached | subjected to the component similar to Embodiment 2, and description is abbreviate | omitted.

  Moreover, the reflector 80 has a paraboloidal shape on the inner surface so that the light emitted from the LED chip 10 and the light emitted from the color conversion unit 70 are reflected toward the light emitting surface 53 side of the sealing unit 50. However, it may be designed as appropriate according to the desired light distribution characteristics of the light emitting device. The reflector 80 has an outer collar piece 83 that extends outward from the edge on the light emitting side.

  As a material of the reflector 80, for example, a metal (for example, Al, Cu) having a high reflectance of light emitted from the phosphor of the LED chip 10 or the color conversion unit 70 and a high thermal conductivity may be employed. In this embodiment, Al is adopted. However, when a metal is adopted as the material of the reflector 80, the wiring pattern 23 (FIGS. 1A and 1B) of each wiring board 22 (see FIGS. 1A and 1B) described in the first embodiment is used. Of course, it is necessary to be electrically insulated from b). When Cu is used as the material of the reflector 80, it is desirable to metallize a reflective layer such as a Ni layer / Ag layer or a Ni layer / Al layer on the inner surface. In addition, the material of the reflector 80 is not limited to metal, and a resin or ceramic having higher thermal conductivity than that of the color conversion unit 70 may be used. For example, when resin is used, a copper foil is used on the inner surface, for example. The reflective layer such as a Ni layer / Ag layer or a Ni / Al layer may be metallized on the copper foil.

  Thus, in the light emitting device of this embodiment, light that does not satisfy the total reflection condition on the outer surface 52 of the sealing portion 50 can be reflected by the reflector 80 toward the light emitting surface 53 side of the sealing portion 50. In addition, the light extraction efficiency to the outside can be increased, and the reflector 80 also serves as a heat radiating member, so that the heat radiating path from the color conversion unit 70 is increased and the heat radiating performance is improved. I can plan.

(Embodiment 7)
The basic configuration of the light emitting device of the present embodiment is substantially the same as that of the sixth embodiment. As shown in FIG. 10, the hemispherical sealing portion 50 is formed inside the color conversion portion 70, and the LED chip 10 and the submount member. 30, a flat translucent cover 90 is fixed to the outer flange 83 of the reflector 80 so as to close the opening surface on the light extraction side of the reflector 80, and the reflecting portion 60 is The point which is provided in the surface facing the LED chip 10 in the translucent cover 90 is different. Here, the translucent cover 90 is formed of a translucent material (for example, acrylic resin, glass, or the like). Note that the shape of the translucent cover 90 is not limited to a flat plate shape, and may be set as appropriate according to desired light distribution characteristics of the light emitting device. For example, the translucent cover 90 may be set to a plano-convex lens shape.

  By the way, in the light emitting device of each of the embodiments described above, the reflection unit 60 is provided in the thickness direction of the LED chip 10, and the light from the LED chip 10 and the light from the color conversion unit 70 are blocked by the reflection unit 60. Therefore, a shadowed area is generated due to the presence of the reflection unit 60. As shown in FIG. 11, the light from the color conversion unit 70 is allowed to pass through the reflection unit 60 and directly from the LED chip 10. If the slit 62 penetrating in the direction not allowing light to pass through is formed, it is possible to prevent direct light from the LED chip 10 from being emitted while reducing the shadow area by the reflecting portion 60. . Also, as shown in FIG. 12A, the color conversion unit is arranged around the reflection unit 60 to reflect the direct light I2 from the LED chip 10 side (the emission peak wavelength of the LED chip 10 is λp) and the color conversion unit. If the wavelength selection filter 65 that transmits the light I1 emitted from the light emitting surface 70 (the light from the phosphor and the indirect light from the LED chip 10) is provided, the area that is shaded by the reflection unit 60 is reduced. However, it is possible to prevent the direct light I2 from the LED chip 10 from being emitted. FIG. 12B shows the reflection characteristic for light incident from the color conversion unit 70 side in the wavelength selection filter 65, and FIG. 12C shows the reflection characteristic for light incident from the LED chip 10 side in the wavelength selection filter 65. Is shown.

  In each of the above-described embodiments, a blue LED chip whose emission color is blue is adopted as the LED chip 10, but the light emitted from the LED chip 10 is not limited to blue light, for example, red light, green Light, purple light, etc. may be used. The LED chip 10 has the anode electrode formed on the one surface side and the cathode electrode formed on the other surface side. The anode electrode and the cathode electrode are formed on the one surface side. In this case, both the anode electrode and the cathode electrode can be directly connected to the wiring patterns 23 and 23 via the bonding wires 14. Further, when the difference in linear expansion coefficient between the LED chip 10 and the heat transfer plate 21 is relatively small, the submount member 30 is not necessarily provided.

The light-emitting device of Embodiment 1 is shown, (a) is a principal part schematic plan view, (b) is a schematic sectional drawing of the whole light-emitting device corresponding to the AA 'cross section of (a), (c) is (a). It is a schematic sectional drawing of the whole light-emitting device corresponding to a BB 'cross section. It is explanatory drawing of the manufacturing method of a light-emitting device same as the above. Explanatory drawing of the other manufacturing method of a light-emitting device same as the above. It is explanatory drawing of another manufacturing method of a light-emitting device same as the above. FIG. 6 is a schematic cross-sectional view showing a second embodiment. FIG. 6 is a schematic cross-sectional view showing a third embodiment. FIG. 6 is a schematic cross-sectional view showing a fourth embodiment. FIG. 6 is a schematic cross-sectional view showing a fifth embodiment. FIG. 10 is a schematic cross-sectional view showing a main part of a sixth embodiment. FIG. 10 is a schematic cross-sectional view of a main part showing Embodiment 7. It is principal part explanatory drawing of the other structural example of the light-emitting device same as the above. It is principal part explanatory drawing of another structural example of the light-emitting device same as the above. It is a schematic sectional drawing which shows the light-emitting device of a prior art example.

Explanation of symbols

DESCRIPTION OF SYMBOLS 10 LED chip 20 Mounting board 21 Heat-transfer plate 21a Fine uneven structure part 22 Wiring board 30 Submount member 40 Reflective layer 50 Sealing part 52 Outer side surface 60 Reflective part 62 Slit 65 Wavelength selection filter 70 Color conversion part

Claims (6)

An LED chip, a plate-shaped heat transfer plate made of a heat conductor material, on which the LED chip is mounted on one surface side, and excited at least by light emitted from the LED chip and having a longer wavelength than the LED chip A color converter formed of a phosphor that emits light and disposed so as to surround the LED chip in a plan view; and a color conversion unit that is spaced apart from the LED chip in the thickness direction of the LED chip and is emitted from the LED chip A reflective portion that reflects light toward the color conversion portion, the LED chip is mounted on the heat transfer plate via a submount member, and the color conversion portion is on the one surface side of the heat transfer plate The light emitting device is provided with a constant thickness and is thermally coupled to the heat transfer plate.   Between the color conversion part and the heat transfer plate, formed from a material having a higher reflectance to visible light than the heat transfer plate, emitted from the LED chip and transmitted through the color conversion part and the phosphor The light emitting device according to claim 1, further comprising a reflective layer that reflects light emitted toward the heat transfer plate.   The heat transfer plate has a fine concavo-convex structure portion formed in a portion overlapping the color conversion portion on the one surface side, the reflective layer is laminated on the fine concavo-convex structure portion, and the color conversion portion is laminated on the reflective layer. The light-emitting device according to claim 2.   Provided with a sealing portion made of a translucent material that seals the LED chip and the color conversion portion on the one surface side of the heat transfer plate, and the sealing portion is formed in a paraboloid shape on the outer surface. The light emitting device according to any one of claims 1 to 3, wherein the light emitting device is formed.   5. The slit according to claim 1, wherein the reflection part has a slit penetrating in a direction that allows light from the color conversion part side to pass and does not allow direct light from the LED chip to pass. The light emitting device according to claim 1.   It is arrange | positioned around the said reflection part, reflects the direct light from the said LED chip side, and permeate | transmits the light from the said fluorescent substance radiate | emitted from the light emission surface of the said color conversion part, and the indirect light from the said LED chip. The light-emitting device according to claim 1, further comprising a wavelength selection filter.

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