JP5297591B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP5297591B2
JP5297591B2 JP2007034432A JP2007034432A JP5297591B2 JP 5297591 B2 JP5297591 B2 JP 5297591B2 JP 2007034432 A JP2007034432 A JP 2007034432A JP 2007034432 A JP2007034432 A JP 2007034432A JP 5297591 B2 JP5297591 B2 JP 5297591B2
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JP
Japan
Prior art keywords
layer
memory element
electrode
memory
insulating layer
Prior art date
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Expired - Fee Related
Application number
JP2007034432A
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English (en)
Japanese (ja)
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JP2007258689A (ja
JP2007258689A5 (https=
Inventor
圭恵 高野
清 加藤
秀明 桑原
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2007034432A priority Critical patent/JP5297591B2/ja
Publication of JP2007258689A publication Critical patent/JP2007258689A/ja
Publication of JP2007258689A5 publication Critical patent/JP2007258689A5/ja
Application granted granted Critical
Publication of JP5297591B2 publication Critical patent/JP5297591B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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  • Electroluminescent Light Sources (AREA)
  • Semiconductor Memories (AREA)
  • Thin Film Transistor (AREA)
JP2007034432A 2006-02-23 2007-02-15 半導体装置 Expired - Fee Related JP5297591B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2007034432A JP5297591B2 (ja) 2006-02-23 2007-02-15 半導体装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2006047057 2006-02-23
JP2006047057 2006-02-23
JP2007034432A JP5297591B2 (ja) 2006-02-23 2007-02-15 半導体装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2012174805A Division JP5459916B2 (ja) 2006-02-23 2012-08-07 半導体装置

Publications (3)

Publication Number Publication Date
JP2007258689A JP2007258689A (ja) 2007-10-04
JP2007258689A5 JP2007258689A5 (https=) 2010-04-02
JP5297591B2 true JP5297591B2 (ja) 2013-09-25

Family

ID=38632574

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007034432A Expired - Fee Related JP5297591B2 (ja) 2006-02-23 2007-02-15 半導体装置

Country Status (1)

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JP (1) JP5297591B2 (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090159677A1 (en) * 2007-12-20 2009-06-25 General Electric Company Contactless power and data transfer system and method
WO2010032611A1 (en) 2008-09-19 2010-03-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US8911653B2 (en) * 2009-05-21 2014-12-16 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing light-emitting device
KR102499288B1 (ko) * 2016-01-08 2023-02-14 삼성디스플레이 주식회사 표시 장치

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09266253A (ja) * 1996-03-28 1997-10-07 Seiko Epson Corp 半導体装置
JP2001189431A (ja) * 1999-12-28 2001-07-10 Seiko Epson Corp メモリのセル構造及びメモリデバイス
JP2006108645A (ja) * 2004-10-08 2006-04-20 Ind Technol Res Inst マルチレベル相変化メモリ、及びその動作方法並びに製造方法

Also Published As

Publication number Publication date
JP2007258689A (ja) 2007-10-04

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