JP5294162B2 - 光検出素子、及び該光検出素子の製造方法 - Google Patents
光検出素子、及び該光検出素子の製造方法 Download PDFInfo
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- JP5294162B2 JP5294162B2 JP2012537599A JP2012537599A JP5294162B2 JP 5294162 B2 JP5294162 B2 JP 5294162B2 JP 2012537599 A JP2012537599 A JP 2012537599A JP 2012537599 A JP2012537599 A JP 2012537599A JP 5294162 B2 JP5294162 B2 JP 5294162B2
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- 230000015572 biosynthetic process Effects 0.000 abstract description 10
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
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- 239000001301 oxygen Substances 0.000 description 10
- 229910052760 oxygen Inorganic materials 0.000 description 10
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- 229910052594 sapphire Inorganic materials 0.000 description 8
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- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
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- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 229910001882 dioxygen Inorganic materials 0.000 description 3
- 238000005566 electron beam evaporation Methods 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 239000003960 organic solvent Substances 0.000 description 3
- 229910052697 platinum Inorganic materials 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910013641 LiNbO 3 Inorganic materials 0.000 description 2
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- 229910052733 gallium Inorganic materials 0.000 description 1
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- 238000009413 insulation Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000004776 molecular orbital Methods 0.000 description 1
- 238000012806 monitoring device Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
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Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/09—Devices sensitive to infrared, visible or ultraviolet radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Light Receiving Elements (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
- Physical Vapour Deposition (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012537599A JP5294162B2 (ja) | 2010-10-04 | 2011-07-05 | 光検出素子、及び該光検出素子の製造方法 |
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2010225194 | 2010-10-04 | ||
| JP2010225194 | 2010-10-04 | ||
| PCT/JP2011/065360 WO2012046479A1 (ja) | 2010-10-04 | 2011-07-05 | 光検出素子、及び該光検出素子の製造方法 |
| JP2012537599A JP5294162B2 (ja) | 2010-10-04 | 2011-07-05 | 光検出素子、及び該光検出素子の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP5294162B2 true JP5294162B2 (ja) | 2013-09-18 |
| JPWO2012046479A1 JPWO2012046479A1 (ja) | 2014-02-24 |
Family
ID=45927480
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2012537599A Expired - Fee Related JP5294162B2 (ja) | 2010-10-04 | 2011-07-05 | 光検出素子、及び該光検出素子の製造方法 |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP5294162B2 (zh) |
| CN (1) | CN103180963B (zh) |
| WO (1) | WO2012046479A1 (zh) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2016111612A1 (en) * | 2015-01-06 | 2016-07-14 | Universiti Malaya | Method of fabricating zinc oxide as transparent conductive oxide layer |
| KR102470749B1 (ko) * | 2020-09-15 | 2022-11-24 | 한양대학교 산학협력단 | 자외선 센서 및 그 제조 방법 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006073669A (ja) * | 2004-08-31 | 2006-03-16 | National Institute Of Advanced Industrial & Technology | センサ、センサアレイ、電流測定装置 |
| JP2010027748A (ja) * | 2008-07-17 | 2010-02-04 | Alps Electric Co Ltd | 紫外線センサ |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2437768A (en) * | 2006-05-03 | 2007-11-07 | Seiko Epson Corp | Photosensing TFT |
| CN101652863A (zh) * | 2007-02-02 | 2010-02-17 | 罗姆股份有限公司 | ZnO系半导体元件 |
| JP4947006B2 (ja) * | 2008-08-05 | 2012-06-06 | ソニー株式会社 | 光電変換装置及び光電変換素子 |
| CN100576577C (zh) * | 2008-09-19 | 2009-12-30 | 武汉大学 | 一种n-ZnO纳米线/p-NiO异质pn结二极管及其制备方法 |
-
2011
- 2011-07-05 WO PCT/JP2011/065360 patent/WO2012046479A1/ja active Application Filing
- 2011-07-05 JP JP2012537599A patent/JP5294162B2/ja not_active Expired - Fee Related
- 2011-07-05 CN CN201180048331.7A patent/CN103180963B/zh not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006073669A (ja) * | 2004-08-31 | 2006-03-16 | National Institute Of Advanced Industrial & Technology | センサ、センサアレイ、電流測定装置 |
| JP2010027748A (ja) * | 2008-07-17 | 2010-02-04 | Alps Electric Co Ltd | 紫外線センサ |
Also Published As
| Publication number | Publication date |
|---|---|
| CN103180963B (zh) | 2015-07-29 |
| WO2012046479A1 (ja) | 2012-04-12 |
| JPWO2012046479A1 (ja) | 2014-02-24 |
| CN103180963A (zh) | 2013-06-26 |
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