CN108281496A - 一种硅基PiN紫外光电二极管及其制备方法 - Google Patents
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- 239000010703 silicon Substances 0.000 title claims abstract description 51
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- 229910000480 nickel oxide Inorganic materials 0.000 claims abstract description 51
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- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims abstract description 31
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 15
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 13
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 13
- 238000001755 magnetron sputter deposition Methods 0.000 claims abstract description 13
- 239000004411 aluminium Substances 0.000 claims abstract description 12
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 28
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Abstract
本发明公开了一种硅基PiN紫外光电二极管，包括铝电极和镍电极，两电极之间依次附有N型硅衬底、i层氧化镍薄膜和P型氧化镍薄膜。其制备方法是采用磁控溅射设备，利用氧化镍在硅上沉积成膜，形成PiN异质结结构，氧化镍薄膜可作为紫外光吸收层，解决了硅器件的紫外响应问题，制备过程简单易行。
Description
技术领域
本发明属于可扩展硅光控二极管技术领域，具体涉及一种硅基PiN紫外光电二极管及其制备方法。
背景技术
硅在近紫外到近红外区有较高的灵敏度，但由于其频带(1.12eV)的限制,只限于在1.1μm波长以下使用，限制在紫外光电领域的发展，与红外、可见光波段探测相比，半导体紫外光电探测器有以下优点：对可见及红外波段是“可见盲”或“日盲”，可以防止太阳光及其它可见光、红外光等自然光源的干扰，结构简单、响应速度快、可靠性高、体积小等。为了使硅基光电器件可受控于紫外光源，在硅衬底上制备NiO薄膜，NiO是直接宽带隙半导体材料，不仅在发光器件应用方面有独特的优势，而且作为探测器可以实现窄的波长响应和较高的光谱响应度。2017年，Bhaskar Parida,Seongjun Kim等在论文《Nanostructured-NiO/Si heterojunction photodector》中采用了溶胶凝胶法制备了NiO/Si异质结，结果表明异质结具有良好的整流特性，且具有一定的光响应，但响应速度较低。
发明内容
本发明的目的是提供一种硅基PiN结构紫外光电二极管，解决了硅基光电器件紫外光控问题。
本发明另一目的是提供该二极管的制备方法。
本发明所采用的一个技术方案是，一种硅基PiN紫外光电二极管，包括铝电极和镍电极，两电极之间由铝电极向镍电极方向依次附有N型硅衬底、i层氧化镍薄膜和P型氧化镍薄膜。
优选地，上述i层氧化镍薄膜厚度为30nm-100nm，P型氧化镍薄膜厚度为30nm-100nm。
本发明所采用的另一个技术方案是，上述硅基PiN紫外光电二极管的制备方法，包括以下步骤：
(1)对N型硅衬底进行RCA清洗；
(2)利用磁控溅射设备，在N型硅衬底上沉积出i层氧化镍薄膜；
(3)利用磁控溅射设备，在i层氧化镍薄膜上沉积出P型氧化镍薄膜；
(4)在P型氧化镍薄膜上沉积镍电极；
(5)在硅片背面沉积铝电极；
(6)退火，形成欧姆接触。
优选地，上述i层氧化镍薄膜的沉积工艺为：沉积过程只通入氩气，沉积时间控制为0.1h-2h，沉积压强控制为1Pa-5Pa，溅射功率控制为80W-160W。溅射时间决定了i层厚度，溅射压强影响镀膜速率，功率影响沉积薄膜的质量，在此范围内，能得到具有较高紫外光响应度的i层氧化镍薄膜。
优选地，上述P型氧化镍薄膜的沉积工艺为：沉积过程中同时通入氩气和氧气，二者流量比为1:1，沉积时间控制为0.1h-2h，沉积压强控制为1Pa-5Pa，溅射功率控制为80W-160W。溅射时间决定了p型氧化镍厚度，溅射压强影响镀膜速率，功率影响沉积薄膜的质量，在此范围内，能得到具有较高紫外光响应度的P层氧化镍薄膜。氩气流量和氧气流量比为1:1时，所形成的P型氧化镍薄膜结晶质量最好。
优选地，上述退火温度为400℃-600℃，退火时间为60S-500S。
本发明技术方案的原理是，硅在近紫外到近红外区有较高的灵敏度，但由于其频带(1.12eV)的限制，只限于在1.1μm波长以下使用，限制在紫外光电领域的发展，而NiO薄膜是直接宽带隙半导体材料，不仅在发光器件应用方面有独特的优势，而且作为探测器可以实现窄的波长响应和较高的光谱响应度。利用氧化镍来吸收紫外光，当紫外光照射半导体时，当入射光子能量大于或等于材料的禁带宽度时，就被半导体吸收，并激发P区、i区和N区的价带电子，产生光生电子-空穴对，电场作用使电子空穴分离，导带中电子向N区移动，价带中空穴向P区移动，在器件两端产生光电压，在外电路中形成光电流，将接收到的光信号转换为电信号输出，实现光电转换。
本发明的硅基PiN结构紫外光电二极管的制备方法，利用氧化镍在硅上沉积成膜，形成PiN异质结结构，解决了硅器件的紫外响应问题，制备过程简单易行。
附图说明
图1是本发明硅基PiN结构紫外光电二极管示意图；
图2是本发明硅基PiN结构紫外光电二极管的制备方法流程示意图；
图3是本发明p型NiO薄膜在不同氩氧比的条件下XRD图谱；
图4是本发明硅基PiN结构紫外光电二极管的开关特性。
具体实施方式
下面结合附图和具体实施方式对本发明作进一步的详细说明，但本发明并不限于这些实施方式。
本发明的硅基PiN紫外光电二极管一种具体结构如图1所示，包括二极管两端的铝电极和镍叉指状电极，两电极之间由铝电极向镍电极方向依次附有N型单晶硅衬底、i层氧化镍薄膜和P型氧化镍薄膜。
其中，i层氧化镍薄膜厚度为30nm-100nm，P型氧化镍薄膜厚度为30nm-100nm。
通过上述成膜搭配，形成P-i-N异质结结构，N为N型单晶硅衬底，i为i层氧化镍薄膜，P为P型氧化镍薄膜，氧化镍薄膜可作为紫外光吸收层，解决硅器件的紫外响应问题。
如图2所示，本发明的硅基PiN紫外光电二极管的制备方法如下：
(1)对N型硅衬底进行RCA清洗，
1、首先将硅衬底用去离子水冲洗清；
2、在丙酮溶液中超声清洗15min，用来去除衬底表面的有机杂质，再用去离子水冲洗；
3、按照氨水：过氧化氢：去离子水＝1:1:4配比配置标准一号溶液，在80℃水浴中加热15min，用来去除金属离子及有机杂质，再用去离子水冲洗；
4、按照盐酸：过氧化氢：去离子水＝1:1:5配比配置标准二号溶液，在80℃水浴中加热15min，再用去离子水冲洗；
5、在10％的氢氟酸溶液中浸泡10min，用来去除Si表面的氧化层，再用去离子水冲洗；
6、在无水乙醇中超声清洗15min，再用去离子水冲洗，最后用N2吹干
(2)利用磁控溅射设备在N型硅衬底上沉积出i层氧化镍薄膜，沉积过程中只通入氩气，不通入氧气，沉积时间控制为0.1h-2h，沉积压强控制为1Pa-5Pa，溅射功率控制为80W-160W。
(3)利用磁控溅射设备，在i层氧化镍薄膜上沉积出P型氧化镍薄膜，沉积过程中同时通入氩气和氧气，沉积时间控制为0.1h-2h，沉积压强控制为1Pa-5Pa，溅射功率控制为80W-160W。其中，氩气流量和氧气流量比为1:1时，所形成的P型氧化镍薄膜结晶质量最好(如图3所示)。
(4)利用真空镀膜设备，蒸发源为Ni粉，真空度为5×10-3Pa，使用叉指状掩膜版，在P型氧化镍薄膜上沉积镍叉指状电极。
(5)利用真空镀膜设备，蒸发源为Al粒，真空度为5×10-3Pa，在硅片背面沉积铝电极。
(6)使用快速退火设备对步骤5得到的样品进行退火以形成欧姆接触，退火温度为400℃-600℃，退火时间为60S-500S。
图4为所制备紫外光电二极管在纯电阻负载电路中的电压开关波形，测试用光源信号来自365nm紫外LED，连续紫外光经斩波器转化为方波信号，测试结果表明，本发明所制备的器件在365nm紫外光控制下具有良好的开关性能。
以下给出具体制备实施例，通过以下方法均可制备出本发明的硅基PiN紫外光电二极管。
实施例1
对N型单晶硅衬底进行RCA清洗，清洗后用氮气吹干待用。采用磁控溅射设备在硅衬底上沉积100nm厚的i层氧化镍薄膜，氩气流量为20sccm，氧气流量为0sccm，沉积时间为2h，沉积压强为1Pa，溅射功率控制为100W。再采用磁控溅射设备沉积100nm厚的P型氧化镍薄膜，氩气流量为20sccm，氧气流量为20sccm，沉积时间为2h，沉积压强为1Pa，溅射功率控制为100W。再利用真空镀膜设备在P型氧化镍薄膜上沉积镍叉指状电极。再利用真空镀膜设备在硅片背面沉积铝电极。最后使用快速退火设备对样品进行退火以形成欧姆接触，退火温度450℃，退火时间180s。
实施例2
对N型单晶硅衬底进行RCA清洗，清洗后用氮气吹干待用。采用磁控溅射设备在硅衬底上沉积100nm厚的i层氧化镍薄膜，氩气流量为20sccm，氧气流量为0sccm，沉积时间为3h，沉积压强为1Pa，溅射功率控制为100W。再采用磁控溅射设备沉积100nm厚的P型氧化镍薄膜，氩气流量为40sccm，氧气流量为20sccm，沉积时间为1h，沉积压强为1Pa，溅射功率控制为100W。再利用真空镀膜设备在P型氧化镍薄膜上沉积镍叉指状电极。再利用真空镀膜设备在硅片背面沉积铝电极。最后使用快速退火设备对样品进行退火以形成欧姆接触，退火温度450℃，退火时间180s。
实施例3
对N型单晶硅衬底进行RCA清洗，清洗后用氮气吹干待用。采用磁控溅射设备在硅衬底上沉积100nm厚的i层氧化镍薄膜，氩气流量为20sccm，氧气流量为0sccm，沉积时间为1h，沉积压强为1Pa，溅射功率控制为100W。再采用磁控溅射设备沉积100nm厚的P型氧化镍薄膜，氩气流量为20sccm，氧气流量为40sccm，沉积时间为3h，沉积压强为1Pa，溅射功率控制为100W。再利用真空镀膜设备在P型氧化镍薄膜上沉积镍叉指状电极。再利用真空镀膜设备在硅片背面沉积铝电极。最后使用快速退火设备对样品进行退火以形成欧姆接触，退火温度450℃，退火时间180s。
Claims (7)
1.一种硅基PiN紫外光电二极管，其特征在于，包括铝电极和镍电极，两电极之间由铝电极向镍电极方向依次附有N型硅衬底、i层氧化镍薄膜和P型氧化镍薄膜。
2.根据权利要求1所述的硅基PiN紫外光电二极管，其特征在于，所述i层氧化镍薄膜厚度为30nm-100nm，P型氧化镍薄膜厚度为30nm-100nm。
3.一种如权利要求1所述的硅基PiN紫外光电二极管的制备方法，其特征在于，包括以下步骤：
(1)对N型硅衬底进行RCA清洗；
(2)利用磁控溅射设备，在N型硅衬底上沉积出i层氧化镍薄膜；
(3)利用磁控溅射设备，在i层氧化镍薄膜上沉积出P型氧化镍薄膜；
(4)在P型氧化镍薄膜上沉积镍电极；
(5)在硅片背面沉积铝电极；
(6)退火，形成欧姆接触。
4.根据权利要求3所述的硅基PiN紫外光电二极管的制备方法，其特征在于，步骤(2)所述i层氧化镍薄膜的沉积工艺为：沉积过程只通入氩气，沉积时间控制为0.1h-2h，沉积压强控制为1Pa-5Pa，溅射功率控制为80W-160W。
5.根据权利要求3所述的硅基PiN紫外光电二极管的制备方法，其特征在于，步骤(3)所述P型氧化镍薄膜的沉积工艺为：沉积过程中同时通入氩气和氧气，二者流量比为1:1，沉积时间控制为0.1h-2h，沉积压强控制为1Pa-5Pa，溅射功率控制为80W-160W。
6.根据权利要求3所述的硅基PiN紫外光电二极管的制备方法，其特征在于，步骤(6)所述退火温度为400℃-600℃，退火时间为60S-500S。
7.根据权利要求3所述的硅基PiN紫外光电二极管的制备方法，其特征在于，所述i层氧化镍薄膜厚度为30nm-100nm，P型氧化镍薄膜厚度为30nm-100nm。
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