JP5270934B2 - Method for recovering tantalum from electronic substrates - Google Patents
Method for recovering tantalum from electronic substrates Download PDFInfo
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- JP5270934B2 JP5270934B2 JP2008065834A JP2008065834A JP5270934B2 JP 5270934 B2 JP5270934 B2 JP 5270934B2 JP 2008065834 A JP2008065834 A JP 2008065834A JP 2008065834 A JP2008065834 A JP 2008065834A JP 5270934 B2 JP5270934 B2 JP 5270934B2
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- 229910052715 tantalum Inorganic materials 0.000 title claims description 80
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 title claims description 80
- 239000000758 substrate Substances 0.000 title claims description 44
- 238000000034 method Methods 0.000 title claims description 35
- 239000003990 capacitor Substances 0.000 claims description 22
- 229910052802 copper Inorganic materials 0.000 claims description 19
- 239000010949 copper Substances 0.000 claims description 19
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 15
- 229910052709 silver Inorganic materials 0.000 claims description 15
- 229910000510 noble metal Inorganic materials 0.000 claims description 14
- 229910052737 gold Inorganic materials 0.000 claims description 12
- 239000010931 gold Substances 0.000 claims description 12
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 11
- 239000004332 silver Substances 0.000 claims description 11
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 8
- 230000001590 oxidative effect Effects 0.000 claims description 8
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 7
- 229910052763 palladium Inorganic materials 0.000 claims description 4
- 238000010438 heat treatment Methods 0.000 description 9
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 230000000052 comparative effect Effects 0.000 description 5
- 239000012141 concentrate Substances 0.000 description 5
- 238000003723 Smelting Methods 0.000 description 4
- 150000002739 metals Chemical class 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- 238000007873 sieving Methods 0.000 description 4
- 239000010944 silver (metal) Substances 0.000 description 4
- 239000002699 waste material Substances 0.000 description 4
- 239000010410 layer Substances 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- AMWRITDGCCNYAT-UHFFFAOYSA-L hydroxy(oxo)manganese;manganese Chemical compound [Mn].O[Mn]=O.O[Mn]=O AMWRITDGCCNYAT-UHFFFAOYSA-L 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 2
- 238000000746 purification Methods 0.000 description 2
- 238000007670 refining Methods 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- CWYNVVGOOAEACU-UHFFFAOYSA-N Fe2+ Chemical compound [Fe+2] CWYNVVGOOAEACU-UHFFFAOYSA-N 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000005660 chlorination reaction Methods 0.000 description 1
- 239000011362 coarse particle Substances 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 239000002905 metal composite material Substances 0.000 description 1
- 229910052755 nonmetal Inorganic materials 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 238000010298 pulverizing process Methods 0.000 description 1
- 238000004064 recycling Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 238000000638 solvent extraction Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P10/00—Technologies related to metal processing
- Y02P10/20—Recycling
Landscapes
- Combined Means For Separation Of Solids (AREA)
- Manufacture And Refinement Of Metals (AREA)
- Processing Of Solid Wastes (AREA)
Description
本発明は、電子基板からタンタルを効率よく回収することができる電子基板からのタンタルの回収方法に関する。 The present invention relates to a method for recovering tantalum from an electronic substrate that can efficiently recover tantalum from the electronic substrate.
電子基板は、多くの有価金属を含有しており、例えば銅製錬所等において、銅精錬によりＡｕ、Ａｇ、Ｃｕ等の有価金属が回収されている（特許文献１参照）。また、廃電子基板等の非鉄金属と非金属からなる金属複合廃材から銅などを回収する方法が提案されている（特許文献２参照）。
しかし、電子基板には従来の銅製錬では回収できない金属も含有されている。その中の一つにタンタルコンデンサとして使用されているタンタル（Ｔａ）がある。前記タンタルコンデンサは他種のコンデンサに比べて小型で、漏れ電流が少ない上、安定度がよいので、パソコン、携帯電話等の小型のエレクトロニクス製品の基板には多量のタンタルコンデンサが実装されている。
ところがこれまでに、タンタルコンデンサが実装された電子基板からタンタルを回収した事例は報告されておらず、その有効利用が十分に図れていないのが現状である。
Electronic substrates contain many valuable metals, and valuable metals such as Au, Ag, and Cu are recovered by copper refining at, for example, a copper smelter (see Patent Document 1). In addition, a method for recovering copper or the like from a metal composite waste material composed of a non-ferrous metal and a non-metal such as a waste electronic substrate has been proposed (see Patent Document 2).
However, the electronic substrate also contains metals that cannot be recovered by conventional copper smelting. One of them is tantalum (Ta) used as a tantalum capacitor. The tantalum capacitor is smaller than other types of capacitors, has less leakage current, and has high stability. Therefore, a large amount of tantalum capacitors are mounted on a substrate of a small electronic product such as a personal computer or a mobile phone.
However, no examples of collecting tantalum from an electronic substrate on which a tantalum capacitor is mounted have been reported so far, and its effective use has not been sufficiently achieved.
本発明は、従来における諸問題を解決し、以下の目的を達成することを課題とする。即ち、本発明は、従来は電子基板から回収されることのなかったタンタルを簡便な処理によって、金、銀、銅等の貴金属の随伴の少ないタンタル濃集物として効率よく回収することができる電子基板からのタンタルの回収方法を提供することを目的とする。 An object of the present invention is to solve various problems in the prior art and achieve the following objects. That is, according to the present invention, an electron that can be efficiently recovered as a tantalum concentrate with little entrainment of noble metals such as gold, silver, copper, etc. by simple processing of tantalum that has not been recovered from an electronic substrate. An object is to provide a method for recovering tantalum from a substrate.
前記課題を解決するための手段としては以下の通りである。即ち、
＜１＞ タンタルコンデンサが実装された基板を、酸化雰囲気下、５５０℃以上の温度で加熱処理し、得られた加熱処理物を該加熱処理物の長軸長さにより選別してタンタルを回収することを特徴とする電子基板からのタンタルの回収方法である。
＜２＞ 加熱処理物の長軸長さが１ｍｍ以下である前記＜１＞に記載の電子基板からのタンタルの回収方法である。
＜３＞ 基板が貴金属を含み、加熱処理物の長軸長さによりタンタルと貴金属を選別する前記＜１＞から＜２＞のいずれかに記載の電子基板からのタンタルの回収方法である。
＜４＞ 貴金属が、金、銀、銅及びパラジウムから選択される少なくとも１種である前記＜３＞に記載の電子基板からのタンタルの回収方法である。
＜５＞ タンタルコンデンサが実装された基板を破砕した後、加熱処理する前記＜１＞から＜４＞のいずれかに記載の電子基板からのタンタルの回収方法である。
Means for solving the above problems are as follows. That is,
<1> A substrate on which a tantalum capacitor is mounted is heat-treated in an oxidizing atmosphere at a temperature of 550 ° C. or higher, and the obtained heat-treated product is selected according to the major axis length of the heat-treated product to collect tantalum. This is a method for recovering tantalum from an electronic substrate.
<2> The method for recovering tantalum from an electronic substrate according to <1>, wherein the major axis length of the heat-treated product is 1 mm or less.
<3> The method for recovering tantalum from the electronic substrate according to any one of <1> to <2>, wherein the substrate contains a noble metal and the tantalum and the noble metal are selected based on a major axis length of the heat-treated product.
<4> The method for recovering tantalum from the electronic substrate according to <3>, wherein the noble metal is at least one selected from gold, silver, copper, and palladium.
<5> The method for recovering tantalum from the electronic substrate according to any one of <1> to <4>, wherein the substrate on which the tantalum capacitor is mounted is crushed and then heat-treated.
本発明によると、従来における諸問題を解決することができ、従来は電子基板から回収されることのなかったタンタルを簡便な処理によって、金、銀等の貴金属の随伴の少ないタンタル濃集物として回収することができる電子基板からのタンタルの回収方法を提供することができる。 According to the present invention, various problems in the prior art can be solved, and tantalum concentrate that has not been accompanied by noble metals such as gold and silver can be obtained by simple treatment of tantalum that has not been recovered from an electronic substrate in the past. A method for recovering tantalum from an electronic substrate that can be recovered can be provided.
本発明の基板からのタンタルの回収方法は、タンタルコンデンサが実装された基板を、酸化雰囲気下、５５０℃以上の温度で加熱処理した加熱処理物を該加熱処理物の長軸長さによりタンタルを選別する。
ここで、図１は、本発明の電子基板からのタンタルの回収方法の一例を示すフロー図であり、焼却（加熱処理）工程、選別（篩い分け）工程を含み、必要に応じて、破砕工程、分離精製工程、などを含んでなる。
In the method for recovering tantalum from the substrate of the present invention, a substrate on which a tantalum capacitor is mounted is heated at a temperature of 550 ° C. or higher in an oxidizing atmosphere. Sort out.
Here, FIG. 1 is a flow diagram showing an example of a method for recovering tantalum from the electronic substrate of the present invention, including an incineration (heat treatment) step, a sorting (sieving) step, and if necessary, a crushing step , Separation and purification steps, and the like.
＜電子基板＞
前記電子基板としては、タンタルコンデンサが実装されたものが用いられる。このような電子基板は、使用されなくなった通信機器、音響機器、ＯＡ機器、家電製品の廃棄物から回収される。回収される電子基板としては、タンタルコンデンサが実装されていれば特に制限はなく、目的に応じて適宜選択することができるが、パソコンの制御基板（マザーボード、ドーターボード）、携帯電話の制御基板、などが挙げられる。
前記タンタルコンデンサとしては、特に制限はなく、目的に応じて適宜選択することができ、例えばチップコンデンサであることが好ましい。
前記電子基板は、通常、金、銀、銅、パラジウム等の貴金属を含んでおり、後述するように、加熱処理物の長軸長さによりタンタルと貴金属を選別することができる。
<Electronic board>
As the electronic substrate, one on which a tantalum capacitor is mounted is used. Such an electronic substrate is collected from wastes of communication equipment, acoustic equipment, OA equipment, and home appliances that are no longer used. The electronic board to be collected is not particularly limited as long as a tantalum capacitor is mounted, and can be appropriately selected according to the purpose. However, the control board of the personal computer (motherboard, daughter board), the control board of the mobile phone, Etc.
There is no restriction | limiting in particular as said tantalum capacitor, According to the objective, it can select suitably, For example, it is preferable that it is a chip capacitor.
The electronic substrate usually contains a noble metal such as gold, silver, copper, palladium, etc. As will be described later, tantalum and noble metal can be selected according to the major axis length of the heat-treated product.
＜破砕工程＞
前記タンタルが実装された基板は、必要に応じて前処理としては適当な大きさに破砕を行うことが好ましい。該破砕処理は、特に制限はなく、目的に応じて適宜選択することができ、例えば一軸又は二軸の破砕機やシュレッダー、などを用いて行うことができる。なお、基板を粉砕すると貴金属まで微細画分へ混入してしまうので好ましくない。粉砕処理を行わないか、もしくは二軸破砕機等による粗砕程度に留めたほうがよい。
<Crushing process>
The substrate on which the tantalum is mounted is preferably crushed to an appropriate size as a pretreatment if necessary. There is no restriction | limiting in particular in this crushing process, According to the objective, it can select suitably, For example, it can carry out using a uniaxial or biaxial crusher, a shredder, etc. In addition, since it will mix in a fine fraction even if a board | substrate is grind | pulverized, it is not preferable. It is better not to perform the pulverization process or to keep the crushed by a biaxial crusher or the like.
＜加熱処理（焼却）工程＞
破砕後の破砕物を加熱（焼却）処理する。該焼却処理は、特に制限はなく、目的に応じて適宜選択することができるが、例えば電気炉、ロータリーキルン、などを用いて行うことができる。
前記焼却処理は酸化雰囲気下で行う。これは、タンタルコンデンサ内部のタンタル焼結体の粉化に酸素が必要だからである。雰囲気は大気でよく、酸素ガスが含まれればよい。
前記加熱（焼却）の温度は、５５０℃以上であり、６００℃以上が好ましく、上限は基板等の銅が溶融しない１１００℃以下が好ましい。前記加熱温度が５５０℃未満であると、タンタルの酸化反応速度が遅く、短時間でタンタルコンデンサ内部のタンタル焼結体が十分に粉化しないことがある。
前記タンタル焼結体は、酸化マンガン（ＭｎＯ２）及び酸化タンタル（Ｔａ２Ｏ５）層に覆われた金属タンタル粒子により形成されており、低温ではこの酸化物層が保護層となり粒子内部まで酸化しないが、５００℃〜６００℃にかけて酸化速度が急激に上昇し、酸化物層の亀裂を伴う酸化が始まるため、焼結体の破壊が進む。
前記加熱の時間は、特に制限はなく、目的に応じて適宜選択することができ、５分間〜６０分間が好ましい。
前記加熱処理の際の圧力は、コストの面から特に制御が必要ない大気圧下であることが好ましい。
<Heat treatment (incineration) process>
The crushed material after crushing is heated (incinerated). The incineration treatment is not particularly limited and can be appropriately selected depending on the purpose. For example, the incineration treatment can be performed using an electric furnace, a rotary kiln, or the like.
The incineration process is performed in an oxidizing atmosphere. This is because oxygen is necessary for powdering the tantalum sintered body inside the tantalum capacitor. The atmosphere may be air and oxygen gas may be included.
The temperature of the heating (incineration) is 550 ° C. or higher, preferably 600 ° C. or higher, and the upper limit is preferably 1100 ° C. or lower at which copper such as a substrate does not melt. When the heating temperature is less than 550 ° C., the oxidation reaction rate of tantalum is slow, and the tantalum sintered body inside the tantalum capacitor may not be sufficiently pulverized in a short time.
The tantalum sintered body is formed of metal tantalum particles covered with a manganese oxide (MnO 2 ) and tantalum oxide (Ta 2 O 5 ) layer. At low temperatures, the oxide layer becomes a protective layer and oxidizes to the inside of the particles. However, the oxidation rate rapidly increases from 500 ° C. to 600 ° C., and oxidation accompanied by cracking of the oxide layer starts, so the destruction of the sintered body proceeds.
There is no restriction | limiting in particular in the time of the said heating, According to the objective, it can select suitably, 5 minutes-60 minutes are preferable.
The pressure at the time of the heat treatment is preferably an atmospheric pressure that does not require any control from the viewpoint of cost.
＜選別（篩い分け）工程＞
焼却処理後、得られた加熱処理物の長軸長さによりタンタルを貴金属と選別する。該選別方法としては、特に制限はなく、目的に応じて適宜選択することができるが、例えば篩い、サイクロン、機械分級機等の物理的選別が好ましい。これらの中でも、篩いによる選別が特に好ましい。化学的選別では水分が存在するので乾式精錬には適さない。
前記篩いとしては、開口径０．３ｍｍ〜１ｍｍのものが好ましい。
前記選別により、長軸長さが１ｍｍ以下の部分の加熱処理物を分離し、これからタンタルの回収を行う。長軸長さが１ｍｍを超える部分の加熱処理物には、実質的にタンタルは含まれておらず、金、銀、銅、パラジウム等の貴金属の含有量も少ないので、タンタルを効率よく回収するのに有利である。
前記加熱処理物の長軸長さは１ｍｍ以下が好ましく、０．３ｍｍ以下がより好ましい。これによりタンタル品位が高まる。
ここで、前記加熱処理物の長軸長さとは、加熱処理物を上方から平面視した際における最大の長さを意味する。
前記加熱処理物の長軸長さは、例えばフルイ目が異なるフルイを複数用意して、各フルイの通過量、残存量により質量平均長さを求める方法、拡大写真を撮影し、スケール等により実測する方法などにより測定することができる。
<Selection (sieving) process>
After incineration, tantalum is selected from noble metals according to the long axis length of the heat-treated product obtained. The sorting method is not particularly limited and may be appropriately selected depending on the intended purpose. For example, physical sorting using a sieve, a cyclone, a mechanical classifier or the like is preferable. Among these, sorting by sieving is particularly preferable. Chemical sorting is not suitable for dry refining because of the presence of moisture.
As the sieve, those having an opening diameter of 0.3 mm to 1 mm are preferable.
By the sorting, the heat-treated product having a major axis length of 1 mm or less is separated, and tantalum is recovered therefrom. The heat-treated product with the major axis length exceeding 1 mm is substantially free of tantalum and has a low content of noble metals such as gold, silver, copper, palladium, etc., so tantalum is efficiently recovered. Is advantageous.
The major axis length of the heat-treated product is preferably 1 mm or less, and more preferably 0.3 mm or less. This increases the tantalum quality.
Here, the major axis length of the heat-treated product means the maximum length when the heat-treated product is viewed from above.
The major axis length of the heat-treated product is prepared by, for example, preparing a plurality of sieves having different sieve meshes, obtaining a mass average length based on the passing amount and remaining amount of each sieve, taking an enlarged photograph, and measuring with a scale or the like. It can measure by the method to do.
＜タンタルの分離精製工程＞
得られた加熱処理物の長軸長さが１ｍｍ以下の部分からタンタルを分離精製する方法としては、特に制限はなく、目的に応じて適宜選択することができるが、例えばフッ酸溶解及び溶媒抽出による湿式法や、塩化揮発による乾式法、などが挙げられる。
<Tantalum separation and purification process>
The method for separating and purifying tantalum from the portion having a major axis length of 1 mm or less of the heat-treated product is not particularly limited and can be appropriately selected according to the purpose. For example, hydrofluoric acid dissolution and solvent extraction And a wet method using chlorination and a dry method using volatilization of chloride.
本発明の電子基板からのタンタルの回収方法は、タンタルコンデンサが実装された電子基板を、酸化雰囲気下、５５０℃以上の温度で加熱処理した加熱処理物を該加熱処理物の長軸長さによりタンタルを選別する。
具体的には、前記タンタルコンデンサを実装したプリント基板を、必要に応じて粉砕し、酸化雰囲気下、６００℃の温度で１時間加熱処理する。タンタルコンデンサ内部のタンタル焼結体は５５０℃付近で急激な酸化反応を起こして膨張するため、焼結体の構造が崩れてタンタル酸化物の微粉末となる。したがって加熱処理物の長軸長さが１ｍｍ以下の部分を開口径１ｍｍの篩いを用いて篩い分けすることにより、タンタルを濃集して回収することが可能となる。このとき、経済的価値の高い金や銀は長軸長さが１ｍｍ以下の細粒には濃集せず、長軸長さが１ｍｍ超の粗粒となるのでタンタルと分離することができる。この粗粒については従来のリサイクル法である銅製錬プロセス等により金や銀等の金属を回収することができる。
According to the method for recovering tantalum from an electronic substrate according to the present invention, a heat-treated product obtained by heat-treating an electronic substrate on which a tantalum capacitor is mounted at a temperature of 550 ° C. or higher in an oxidizing atmosphere depends on the major axis length of the heat-treated product. Select tantalum.
Specifically, the printed circuit board on which the tantalum capacitor is mounted is pulverized as necessary and heat-treated at a temperature of 600 ° C. for 1 hour in an oxidizing atmosphere. Since the tantalum sintered body inside the tantalum capacitor expands due to a rapid oxidation reaction at around 550 ° C., the structure of the sintered body collapses and becomes a fine powder of tantalum oxide. Therefore, tantalum can be concentrated and recovered by sieving a portion having a major axis length of 1 mm or less using a sieve having an opening diameter of 1 mm. At this time, gold and silver having high economic value do not concentrate in fine grains having a major axis length of 1 mm or less, and become coarse grains having a major axis length of more than 1 mm, so that they can be separated from tantalum. About this coarse grain, metals, such as gold | metal | money and silver, can be collect | recovered by the copper smelting process etc. which are the conventional recycling methods.
一方、加熱温度が５５０℃未満であると、タンタルコンデンサの樹脂モールドは灰化するものの、タンタル焼結体は形態を維持するため、細粒への濃集はみられず、長軸長さが１ｍｍ超の粗粒として存在する。この場合、同じ粒度範囲に金や銀なども濃集しており、また従来の銅製錬では原理的にタンタルは回収できないことから、銅製錬工程に投入される前にタンタルを分離する必要があるため、比重選別等の物理選別の設備投資を要し、コストアップとなる。 On the other hand, if the heating temperature is less than 550 ° C., the resin mold of the tantalum capacitor is incinerated, but the tantalum sintered body maintains its form, so no concentration in fine particles is observed, and the major axis length is It exists as coarse particles exceeding 1 mm. In this case, gold and silver are concentrated in the same particle size range, and tantalum cannot be recovered in principle by conventional copper smelting, so it is necessary to separate tantalum before being put into the copper smelting process. Therefore, it requires capital investment for physical sorting such as specific gravity sorting, which increases costs.
本発明の電子基板からのタンタルの回収方法によれば、従来は電子基板から回収されることのなかったタンタルを簡便な処理によって、金、銀、銅等の貴金属の随伴の少ないタンタル濃集物として効率よく回収することができ、タンタルの有効利用が図れる。 According to the method for recovering tantalum from an electronic substrate according to the present invention, a tantalum concentrate having little entrainment of noble metals such as gold, silver and copper can be obtained by simple treatment of tantalum that has not been recovered from an electronic substrate. As a result, the tantalum can be effectively used.
以下、本発明の実施例を説明するが、本発明は、これらの実施例に何ら限定されるものではない。 Examples of the present invention will be described below, but the present invention is not limited to these examples.
（比較例１）
使用されなくなった通信機器、音響機器、ＯＡ機器、家電製品の廃棄物からタンタルコンデンサを実装した電子基板を選別し、該タンタルコンデンサを実装した電子基板をヤマト科学株式会社製 マッフル炉 ＦＰ３００を用いて、酸化雰囲気下、５００℃の温度で１時間加熱した。
得られた加熱処理物について、以下のようにして、長軸長さ分布と、該長軸長さ分布ごとのＴａ、Ａｕ、Ａｇ、Ｃｕの品位と分配率を測定した。結果を表１に示す。
(Comparative Example 1)
An electronic board mounted with a tantalum capacitor is selected from wastes of communication equipment, audio equipment, OA equipment, and household appliances that are no longer used, and the electronic board mounted with the tantalum capacitor is used with a muffle furnace FP300 manufactured by Yamato Scientific Co., Ltd. Then, it was heated at a temperature of 500 ° C. for 1 hour in an oxidizing atmosphere.
With respect to the obtained heat-treated product, the major axis length distribution and the quality and distribution ratio of Ta, Au, Ag, and Cu for each major axis length distribution were measured as follows. The results are shown in Table 1.
＜加熱処理物の長軸長さの測定＞
フルイ目により通過しない残量の質量によりフルイ目径をその残物の粒径として、質量を測定し、全加熱処理物の長軸長さを求めた。なお、フルイ目が大きい順に加熱処理物を通過させた。
<Measurement of major axis length of heat-treated product>
The mass was measured based on the mass of the residual amount that did not pass through the sieve mesh, and the mass was measured to determine the major axis length of all the heat-treated products. In addition, the heat-processed material was allowed to pass through in order with a large sieve mesh.
＜Ｔａ、Ａｕ、Ａｇ、Ｃｕの品位と分配率の測定＞
各組成の品位は、蛍光Ｘ線分析により求めた。分配率は、その品位の値より計算して求めた。
<Measurement of grade and distribution rate of Ta, Au, Ag, Cu>
The quality of each composition was determined by fluorescent X-ray analysis. The distribution rate was calculated from the quality value.
（実施例１）
比較例１において、酸化雰囲気下、６００℃の温度で１時間加熱した以外は、比較例１と同様にして、加熱処理した。
得られた加熱処理物について、比較例１と同様にして、長軸長さ分布と、該長軸長さ分布ごとのＴａ、Ａｕ、Ａｇ、Ｃｕの品位と分配率を測定した。結果を表２に示す。
Example 1
In Comparative Example 1, heat treatment was performed in the same manner as in Comparative Example 1 except that heating was performed at a temperature of 600 ° C. for 1 hour in an oxidizing atmosphere.
For the obtained heat-treated product, in the same manner as in Comparative Example 1, the major axis length distribution, and the quality and distribution rate of Ta, Au, Ag, and Cu for each major axis length distribution were measured. The results are shown in Table 2.
表１及び表２の結果から、実施例１では比較例１に比べて、加熱処理物の長軸長さが１ｍｍ以下の部分の割合が３０％と多くなり、加熱処理物の長軸長さが１ｍｍ超の部分にタンタルが含まれておらず、加熱処理物の長軸長さが１ｍｍ以下の部分を用いてタンタルを効率よく回収できることが分かった。 From the results of Tables 1 and 2, in Example 1, the ratio of the portion where the major axis length of the heat-treated product is 1 mm or less is 30% higher than that of Comparative Example 1, and the major axis length of the heat-treated product is 30%. It has been found that tantalum is not contained in a portion exceeding 1 mm, and tantalum can be efficiently recovered using a portion where the major axis length of the heat-treated product is 1 mm or less.
本発明の電子基板からのタンタルの回収方法は、従来は電子基板から回収されることのなかったタンタルを簡便な処理によって、金、銀、銅等の貴金属の随伴の少ないタンタル濃集物として効率よく回収することができ、タンタルの有効利用が図れる。 The method for recovering tantalum from an electronic substrate according to the present invention is effective as a tantalum concentrate with little entrainment of noble metals such as gold, silver, copper, etc., by simple treatment of tantalum that has not been recovered from an electronic substrate in the past. It can be recovered well and tantalum can be used effectively.
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