JP5265438B2 - Semiconductor device - Google Patents

Semiconductor device Download PDF

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JP5265438B2
JP5265438B2 JP2009089229A JP2009089229A JP5265438B2 JP 5265438 B2 JP5265438 B2 JP 5265438B2 JP 2009089229 A JP2009089229 A JP 2009089229A JP 2009089229 A JP2009089229 A JP 2009089229A JP 5265438 B2 JP5265438 B2 JP 5265438B2
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groove
underfill agent
semiconductor element
wiring board
semiconductor
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JP2010245108A5 (en
JP2010245108A (en
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隆史 小澤
聖二 佐藤
和之 和泉
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Shinko Electric Industries Co Ltd
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Shinko Electric Industries Co Ltd
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Priority to JP2009089229A priority Critical patent/JP5265438B2/en
Priority to US12/751,296 priority patent/US8575765B2/en
Publication of JP2010245108A publication Critical patent/JP2010245108A/en
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    • H—ELECTRICITY
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H01L21/563—Encapsulation of active face of flip-chip device, e.g. underfilling or underencapsulation of flip-chip, encapsulation preform on chip or mounting substrate
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    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/065—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L25/0657—Stacked arrangements of devices
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    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
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    • H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
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    • H01L2225/0651—Wire or wire-like electrical connections from device to substrate
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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
  • Wire Bonding (AREA)

Description

本発明は半導体装置としての半導体パッケージに関する。 The present invention relates to a semiconductor package as a semiconductor device .

半導体装置には、図６に示す様に、配線基板上に半導体素子が搭載された半導体パッケージ上に、他の半導体素子又は半導体装置等の電子部品が三次元実装された半導体装置が提案されている。図６（ａ）に示す半導体装置は、配線基板１００の一面側にフリップチップ方式によって搭載された半導体素子１０２上に積層された半導体素子１０４が、配線基板１００の一面側にワイヤ１０６，１０６・・によって電気的に接続されている。
また、図６（ｂ）に示すＰＯＰ構造の半導体装置も提案されている。図６（ｂ）に示す半導体装置は、配線基板２００の一面側にフリップチップ方式によって搭載された半導体素子２０２から成る第１半導体装置上に積層された第２半導体装置２０４が、配線基板２００の一面側に接続端子２０６，２０６・・によって電気的に接続されている。 As shown in FIG. 6, a semiconductor device is proposed in which electronic components such as other semiconductor elements or semiconductor devices are three-dimensionally mounted on a semiconductor package in which semiconductor elements are mounted on a wiring board. Yes. In the semiconductor device shown in FIG. 6A, the semiconductor element 104 stacked on the semiconductor element 102 mounted on the one surface side of the wiring substrate 100 by the flip chip method has the wires 106, 106. It is electrically connected by
A semiconductor device having a POP structure shown in FIG. 6B has also been proposed. In the semiconductor device shown in FIG. 6B, the second semiconductor device 204 stacked on the first semiconductor device composed of the semiconductor element 202 mounted on the one surface side of the wiring substrate 200 by the flip chip method is provided on the wiring substrate 200. One side is electrically connected by connection terminals 206, 206,.

かかる図６に示す半導体装置では、いずれも配線基板１００（２００）と半導体素子１０２（２０２）との隙間にはアンダーフィル剤１０８（２０８）が充填されている。
かかるアンダーフィル剤１０８（２０８）は、液状のアンダーフィル剤を搭載された半導体素子１０２（２０２）の近傍にノズル（図示せず）から滴下して、半導体素子１０２（２０２）と配線基板１００（２００）との隙間に充填する。
しかし、図６に示す半導体装置においても、その薄層化の要望に応えるべく、搭載された半導体素子と配線基板との隙間が狭くなり、滴下された液状のアンダーフィル剤が半導体素子と配線基板との隙間に進入し難くなる。このため、滴下された液状のアンダーフィル剤が、配線基板の外周縁方向に広がり易くなって、図６に示す配線基板１００（２００）の外周縁近傍に設けられている、ワイヤ１０６の端部が接続されるパッドや接続端子２０６が装着されるパッドがアンダーフィル剤によって部分的又は全面が被覆され易くなる。 In any of the semiconductor devices shown in FIG. 6, the underfill agent 108 (208) is filled in the gap between the wiring board 100 (200) and the semiconductor element 102 (202).
The underfill agent 108 (208) is dropped from a nozzle (not shown) near the semiconductor element 102 (202) on which the liquid underfill agent is mounted, and the semiconductor element 102 (202) and the wiring board 100 ( 200).
However, in the semiconductor device shown in FIG. 6 as well, in order to meet the demand for a thinner layer, the gap between the mounted semiconductor element and the wiring board is narrowed, and the dropped liquid underfill agent is used for the semiconductor element and the wiring board. It becomes difficult to enter the gap. For this reason, the dropped liquid underfill agent easily spreads in the direction of the outer peripheral edge of the wiring board, and the end portion of the wire 106 provided in the vicinity of the outer peripheral edge of the wiring board 100 (200) shown in FIG. The pad to which the connector is connected or the pad to which the connection terminal 206 is attached is easily partially or entirely covered with the underfill agent.

かかる液状のアンダーフィル剤によってパッドの部分的又は全面が被覆される事態を防止しすべく、下記特許文献１には、図７（ａ）に示す半導体パッケージが提案されている。
図７に示す半導体パッケージでは、配線基板３００の一面側を被覆するソルダーレジスト３０２に、フリップチップ方式で搭載された半導体素子３０４と配線基板３００の外周縁との間に、半導体素子３０４とソルダーレジスト３０２との間の隙間に充填されなかった余剰のアンダーフィル剤３０８が配線基板３００の外周縁方向に広がることを防止する凹溝３０６が形成されている。 In order to prevent a situation in which the partial or entire surface of the thus pads underfill agent such liquid is coated, the following Patent Document 1, the semiconductor package shown in FIG. 7 (a) has been proposed.
In the semiconductor package shown in FIG. 7, the semiconductor element 304 and the solder resist are provided between the semiconductor element 304 mounted on the solder resist 302 covering one surface side of the wiring substrate 300 by the flip chip method and the outer peripheral edge of the wiring substrate 300. A concave groove 306 is formed to prevent an excessive underfill agent 308 that has not been filled in the gap between the wiring board 302 and the wiring board 300 from spreading in the outer peripheral edge direction.

特開２００４−３４９３９９号公報JP 2004-349399 A

図７（ａ）に示す半導体パッケージによれば、図７（ｂ）に示す様に、余剰のアンダーフィル剤３０８の配線基板３００の外周縁方向への広がりは、凹溝３０６によって妨げられる。このため、配線基板３００の外周縁近傍に設けられているパッド３１０等の部材が、アンダーフィル剤によって部分的又は全面的に被覆されることを防止できる。
しかしながら、半導体パッケージには、薄層化の要請と共に小型化の要請があり、図７に示す半導体パッケージの如く、搭載された半導体素子３０４と配線基板３００の外周縁との間に、凹溝３０６を形成する隙間がなくなりつつある。
そこで、本発明は、配線基板の外周縁近傍に形成された部材が余剰のアンダーフィル剤によって被覆されないように、余剰のアンダーフィル剤の配線基板の外周縁方向への広がりを防止する凹溝を、搭載された半導体素子と配線基板との間に形成することを要し、小型化が困難な従来の半導体パッケージの課題を解決し、配線基板の外周縁近傍に形成された部材が余剰のアンダーフィル剤によって被覆されることがなく、且つ小型化が可能な半導体パッケージを提供することを目的とする。 According to the semiconductor package shown in FIG. 7A, as shown in FIG. 7B, the excessive underfill agent 308 is prevented from spreading in the outer peripheral direction of the wiring substrate 300 by the concave groove 306. For this reason, it is possible to prevent a member such as the pad 310 provided in the vicinity of the outer peripheral edge of the wiring board 300 from being partially or entirely covered with the underfill agent.
However, the semiconductor package is required to be reduced in size as well as to be thinned, and the groove 306 is formed between the mounted semiconductor element 304 and the outer peripheral edge of the wiring substrate 300 as in the semiconductor package shown in FIG. The gaps forming are disappearing.
Therefore, the present invention provides a groove for preventing the excess underfill agent from spreading in the direction of the outer peripheral edge of the wiring board so that the member formed in the vicinity of the outer peripheral edge of the wiring board is not covered with the excess underfill agent. Solves the problems of conventional semiconductor packages that require formation between the mounted semiconductor element and the wiring board, which is difficult to reduce in size, and the members formed near the outer periphery of the wiring board are excessive It is an object of the present invention to provide a semiconductor package that is not covered with a filler and can be miniaturized.

本発明者等は、前記課題を解決すべく、図８に示す半導体パッケージを試作した。図８に示す半導体パッケージは、配線基板４００の一面側を覆うソルダーレジスト４０２に、長方形状の溝部４０６を形成し、溝部４０６の底面にパッド４０８，４０８・・から成るパッド群を形成した。このパッド４０８，４０８・・は、配線基板４００にフリップチップ方式によって搭載された半導体素子４０４上に積層される半導体素子とワイヤボンディングされるパッドである。
しかし、半導体素子４０４と溝部４０６との間のＡ位置に、ノズルから液状のアンダーフィル剤４１０の滴下を開始し、矢印の方向にノズルを移動させて、アンダーフィル剤４１０を半導体素子４０４と配線基板４００との隙間に充填したところ、図８に示す如く、余剰のアンダーフィル剤４１０が溝部４０６内に進入し、アンダーフィル剤４１０によって部分的又は全面が被覆されたパッド４０８が発生した。
ところで、溝部４０６にアンダーフィル剤４１０が進入開始した箇所について調査すると、ノズルから液状のアンダーフィル剤４１０の滴下を開始した箇所に近い溝部４０６の角部縁（図８に○印で示す角部縁）であることが判明した。
このため、本発明者等は、液状のアンダーフィル剤４１０の滴下を開始したＡ位置に近い溝部４０６の角部を鈍角にしたところ、溝部４０６内へのアンダーフィル剤４１０の進入を防止できることを見出し、本発明に到達した。 In order to solve the above-mentioned problems, the inventors have made a prototype of the semiconductor package shown in FIG. In the semiconductor package shown in FIG. 8, a rectangular groove 406 is formed in a solder resist 402 covering one surface side of the wiring substrate 400, and a pad group including pads 408, 408,. These pads 408, 408,... Are pads that are wire-bonded to semiconductor elements stacked on the semiconductor element 404 mounted on the wiring board 400 by the flip-chip method.
However, the liquid underfill agent 410 starts to be dropped from the nozzle to the position A between the semiconductor element 404 and the groove 406, and the nozzle is moved in the direction of the arrow so that the underfill agent 410 is connected to the semiconductor element 404 and the wiring. When the gap with the substrate 400 was filled, as shown in FIG. 8, excess underfill agent 410 entered the groove 406, and a pad 408 partially or entirely covered with the underfill agent 410 was generated.
By the way, when the portion where the underfill agent 410 starts to enter the groove portion 406 is investigated, the corner edge of the groove portion 406 close to the portion where the dropping of the liquid underfill agent 410 from the nozzle is started (the corner portion indicated by a circle in FIG. 8). It was found that
For this reason, the present inventors made it possible to prevent the underfill agent 410 from entering the groove portion 406 when the corner portion of the groove portion 406 near the position A where the liquid underfill agent 410 started to be dropped was made obtuse. The headline, the present invention has been reached.

すなわち、本発明は、配線基板の一面側に形成されたフリップチップ搭載用パッドに半導体素子がフリップチップ方式で搭載され、前記半導体素子と前記配線基板との間にアンダーフィル剤が滴下されて充填された半導体装置であって、前記配線基板の一面側を被覆するソルダーレジストに溝部が形成され、前記溝部の底部には複数のパッドが形成され、前記溝部は、前記半導体素子の周縁部と前記配線基板の周縁部との間に、前記配線基板の周縁部に沿って配置され、前記アンダーフィル剤の滴下開始部は、前記半導体素子の周縁部と前記溝部との間であり、前記アンダーフィル剤の滴下開始部近傍の前記溝部の角部縁が、滴下されたアンダーフィル剤の溝部内への進入を防止できるように、鈍角又は円弧状に形成されていることを特徴とする半導体装置にある。
かかる本発明において、アンダーフィル剤の滴下開始部近傍の溝部の角部縁を鈍角とし、前記アンダーフィル剤の滴下開始近傍の複数の溝部同士を、前記溝部よりも幅狭の細幅溝部によって連結することによって、アンダーフィル剤の滴下開始近傍の溝部の角部よりも配線基板の外周縁側に位置する角部縁からのアンダーフィル剤の進入を防止できる。
また、前記溝部の底部に形成された複数のパッドは、前記半導体素子の上方に配置される電子部品と電気的に接続される。これによって、例えば、多数のワイヤボンディング用パッドが形成された溝部内に、アンダーフィル剤の進入を防止できる。 That is, the present invention relates to a semiconductor element is mounted in a flip-chip method to the flip chip mounting pads formed on one surface of the wiring substrate, filling underfill material is dropped between the wiring board and the semiconductor element a semiconductor device, the groove in the solder resist covering the one surface of the wiring substrate is formed, wherein the bottom of the groove is formed with a plurality of pads, said groove, said the peripheral portion of the semiconductor element The underfill agent dropping start portion is disposed between the peripheral portion of the semiconductor element and the groove portion between the peripheral portion of the semiconductor substrate and the underfill agent. The corner edge of the groove part near the dripping start part of the agent is formed in an obtuse angle or an arc shape so as to prevent the dropped underfill agent from entering the groove part. In the semiconductor device that.
In the present invention, the corner edge of the groove portion near the underfill agent dropping start portion is an obtuse angle, and a plurality of groove portions near the underfill agent dropping start portion are connected by a narrow groove portion narrower than the groove portion. By doing so, it is possible to prevent the underfill agent from entering from the corner edge located on the outer peripheral edge side of the wiring board from the corner of the groove near the start of dropping of the underfill agent.
The plurality of pads formed at the bottom of the groove are electrically connected to an electronic component disposed above the semiconductor element. Thereby , for example, the underfill agent can be prevented from entering into the groove where a large number of wire bonding pads are formed.

図８に示す半導体パッケージの如く、底面にパッド４０８，４０８・・から成るパッド群を形成した長方形状の溝部４０６では、液状のアンダーフィル剤の滴下を開始したＡ位置に近い溝部４０６の角部縁から内部にアンダーフィル剤４１０が進入し易い。
この現象は、滴下されたアンダーフィル剤４１０は、その滴下開始部に近い溝部４０６の角部縁に最初に接触する。この最初にアンダーフィル剤４１０が接触した角部縁の角度が直角である場合、角部縁の交点部にアンダーフィル剤４１０の表面張力が集中して、交点部に接触するアンダーフィル剤量が増加し、遂には交点部から溝部４０６内にアンダーフィル剤４１０が進入するものと考えられる。
この点、本発明では、底面にパッド群を形成した溝部のうち、アンダーフィル剤の滴下開始部近傍の溝部の角部縁を鈍角又は円弧状に形成することによって、溝部内にアンダーフィル剤が進入することを防止できる。
この現象は、液状のアンダーフィル剤の滴下を開始した滴下開始部に近い溝部の角部縁にアンダーフィル剤が接触しても、アンダーフィル剤の表面張力が分散され、角部縁に接触するアンダーフィル剤量を平均化できることによるものと推察される。
この様に、溝部内にアンダーフィル剤が進入することを防止できる結果、溝部内に進入したアンダーフィル剤によってパッドが部分的又は全面的に被覆されることによる不良率の低下を図ることができる。 As in the semiconductor package shown in FIG. 8, in the rectangular groove portion 406 in which a pad group consisting of pads 408, 408,... Is formed on the bottom surface, the corner portion of the groove portion 406 close to the position A where the dropping of the liquid underfill agent is started. The underfill agent 410 easily enters from the edge to the inside.
In this phenomenon, the dropped underfill agent 410 first comes into contact with the corner edge of the groove 406 near the dropping start portion. When the angle of the corner edge with which the underfill agent 410 first contacts is a right angle, the surface tension of the underfill agent 410 is concentrated at the intersection of the corner edges, and the amount of the underfill agent that contacts the intersection is reduced. It is considered that the underfill agent 410 enters the groove portion 406 from the intersection point.
In this regard, in the present invention, among the groove portions in which the pad group is formed on the bottom surface, the underfill agent is formed in the groove portion by forming the corner edge of the groove portion near the dripping start portion of the underfill agent in an obtuse angle or an arc shape. It is possible to prevent entry.
This phenomenon is caused by the surface tension of the underfill agent being dispersed and contacting the corner edge even when the underfill agent contacts the corner edge of the groove near the dripping start portion where the dropping of the liquid underfill agent has started. This is presumably due to the ability to average the amount of underfill agent.
As described above, the underfill agent can be prevented from entering the groove, and as a result, the defective rate can be reduced by covering the pad partially or entirely with the underfill agent that has entered the groove. .

本発明に係る半導体パッケージの一例を示す正面図である。It is a front view showing an example of a semiconductor package concerning the present invention. 図１に示す半導体パッケージの部分拡大図である。It is the elements on larger scale of the semiconductor package shown in FIG. 半導体素子と配線基板との間の隙間にアンダーフィル剤を充填した半導体パッケージの部分断面図である。It is a fragmentary sectional view of the semiconductor package which filled the space | interval between a semiconductor element and a wiring board with the underfill agent. 本発明に係る半導体パッケージの他の例を説明する部分拡大図である。It is the elements on larger scale explaining other examples of the semiconductor package concerning the present invention. 本発明に係る半導体パッケージの他の例を説明する正面図である。It is a front view explaining the other example of the semiconductor package which concerns on this invention. 電子部品として他の半導体素子又は半導体装置が三次元実装された半導体装置を説明する断面図である。It is sectional drawing explaining the semiconductor device by which the other semiconductor element or semiconductor device was mounted three-dimensionally as an electronic component. 半導体素子と配線基板との間の隙間に充填したアンダーフィル剤の流出を防止する凹溝を形成した従来の半導体パッケージを説明する断面図及び正面図である。It is sectional drawing and front view explaining the conventional semiconductor package which formed the ditch | groove which prevents the outflow of the underfill agent with which the clearance gap between the semiconductor element and the wiring board was filled. 本発明者がパッド群を底面に形成した溝部によって半導体素子と配線基板との間の隙間に充填したアンダーフィル剤の流出を防止できるか試作した半導体パッケージの正面図である。FIG. 3 is a front view of a semiconductor package that the inventor has made experimentally as to whether an underfill agent filled in a gap between a semiconductor element and a wiring board can be prevented from flowing out by a groove formed with a pad group on the bottom surface.

本発明に係る半導体パッケージの一例を図１に示す。図１に示す半導体パッケージ１０は、配線基板１２の一面側を覆うソルダーレジスト１４に、溝部１６を形成し、溝部１６の底面にパッド１８，１８・・から成るパッド群を形成した。このパッド１８，１８・・は、配線基板１２にフリップチップ方式によって搭載された半導体素子２０上に積層される半導体素子とワイヤボンディングされるパッドである。かかる溝部１６は、搭載された半導体素子２０の各辺に対応して形成した。
この溝部１６，１６・・は、図１に示す様に、台形形状であって、短辺側が半導体素子２０側に位置するように形成されている。このため、溝部１６の角部縁の角度θは、図２に示すように鈍角に形成されている。 An example of a semiconductor package according to the present invention is shown in FIG. In the semiconductor package 10 shown in FIG. 1, a groove portion 16 is formed in a solder resist 14 covering one surface side of the wiring substrate 12, and a pad group including pads 18, 18... Is formed on the bottom surface of the groove portion 16. These pads 18, 18... Are pads that are wire-bonded to the semiconductor elements stacked on the semiconductor element 20 mounted on the wiring board 12 by the flip chip method. The groove 16 was formed corresponding to each side of the mounted semiconductor element 20.
As shown in FIG. 1, the groove portions 16, 16... Have a trapezoidal shape and are formed so that the short side is located on the semiconductor element 20 side. For this reason, the angle θ of the corner edge of the groove 16 is an obtuse angle as shown in FIG.

かかる図１に示す配線基板１２に搭載した半導体素子２０と配線基板１２との間の隙間にアンダーフィル剤２２を充填する際には、半導体素子２０と溝部１６との間であって、半導体素子２０の角部近傍、例えば図１に示すＡ位置でノズル（図示せず）から液状のアンダーフィル剤２２の滴下を開始し、ノズルからアンダーフィル剤２２を滴下しつつ、半導体素子２０の外周縁に沿って矢印方向にノズルを移動する。
この際に、ノズルからアンダーフィル剤２２の滴下を開始したＡ位置（滴下開始部）に近い溝部１６の角部縁に接触するアンダーフィル剤２２は、角部縁の交点部に集中せず分散し、角部縁の交点部からアンダーフィル剤２２が溝部１６内に進入することを防止できる。
この現象は、Ａ位置で滴下開始されたアンダーフィル剤２２は、Ａ位置に近い溝部１６の角部縁に接触する。この溝部１６の角部縁の角度θが鈍角であるため、角部縁の全体にアンダーフィル剤２２の表面張力が分散され、角部縁の交点部にアンダーフィル剤２２が集中することを防止できるためであると推察される。 When the underfill agent 22 is filled in the gap between the semiconductor element 20 mounted on the wiring board 12 shown in FIG. 1 and the wiring board 12, the gap between the semiconductor element 20 and the groove portion 16 is The liquid underfill agent 22 starts to be dropped from a nozzle (not shown) near the corner of 20, for example, at position A shown in FIG. 1, and the outer peripheral edge of the semiconductor element 20 is dropped while dropping the underfill agent 22 from the nozzle. The nozzle is moved along the direction of the arrow.
At this time, the underfill agent 22 that contacts the corner edge of the groove portion 16 near the position A (dropping start portion) where the dropping of the underfill agent 22 from the nozzle is started does not concentrate at the intersection portion of the corner edge and is dispersed. In addition, the underfill agent 22 can be prevented from entering the groove 16 from the intersection of the corner edges.
In this phenomenon, the underfill agent 22 started to be dropped at the position A contacts the corner edge of the groove 16 close to the position A. Since the angle θ of the corner edge of the groove 16 is an obtuse angle, the surface tension of the underfill agent 22 is dispersed throughout the corner edge, preventing the underfill agent 22 from concentrating at the intersection of the corner edges. This is presumed to be possible.

この様にして、半導体素子２０と配線基板１２との間の隙間にアンダーフィル剤２２を充填することによって、図３（ａ）に示す様に、半導体素子２０と溝部１６との間のソルダーレジスト１４上に流出したアンダーフィル剤２２は、ソルダーレジスト１４上に留まっている。従って、溝部１６の底面には、パッド１８，１８・・の各上面が露出している。
かかるパッド１８，１８・・の各上面には、例えば図３（ａ）に示す様に、半導体素子２０上に搭載される半導体素子３０の電極端子に一端部が接続されたワイヤ３２の他端部が接続される。
或いは、パッド１８，１８・・の各上面は、図３（ｂ）に示す様に、半導体素子２０の上方に搭載される半導体装置４０と一端部が接続された接続端子４２の他端部が接続される。 In this way, by filling the gap between the semiconductor element 20 and the wiring substrate 12 with the underfill agent 22, a solder resist between the semiconductor element 20 and the groove 16 is formed as shown in FIG. The underfill agent 22 that has flowed out onto the surface 14 remains on the solder resist 14. Therefore, the upper surfaces of the pads 18, 18,... Are exposed on the bottom surface of the groove portion 16.
On the upper surface of each of the pads 18, 18,..., The other end of the wire 32 having one end connected to the electrode terminal of the semiconductor element 30 mounted on the semiconductor element 20 as shown in FIG. Parts are connected.
Alternatively, as shown in FIG. 3B, the upper surfaces of the pads 18, 18,... Are connected to the semiconductor device 40 mounted above the semiconductor element 20 and the other end portion of the connection terminal 42 connected to one end portion. Connected.

図１及び図２に示す半導体パッケージの様に、溝部１６が台形形状であるため、図２に示す様に、液状のアンダーフィル剤２２が溝部１６の長辺側に回り込む場合がある。この場合、長辺側の角部縁の角度θ′が鋭角であるため、この角部縁の交点部からアンダーフィル剤２２が溝部１６内に進入するおそれがある。
この場合、図４に示す様に、アンダーフィル剤２２の滴下開始部であるＡ位置に近い、溝部１６，１６が、溝部１６よりも幅狭の細幅溝部２４、２４によって連結することによって、長辺側の角部縁の角度θ′を鈍角とすることができる。
尚、図４に示す細幅溝部２４、２４が直角に交差しているが、この交差部に到達するアンダーフィル剤２２の量は少なく、この交差部から細幅溝部２４、２４内にアンダーフィル剤２２が進入するおそれはない。 Since the groove 16 has a trapezoidal shape as in the semiconductor package shown in FIGS. 1 and 2, the liquid underfill agent 22 may wrap around the long side of the groove 16 as shown in FIG. In this case, since the angle θ ′ of the corner edge on the long side is an acute angle, the underfill agent 22 may enter the groove 16 from the intersection of the corner edge.
In this case, as shown in FIG. 4, the groove portions 16 and 16, which are close to the position A that is the dropping start portion of the underfill agent 22, are connected by narrow groove portions 24 and 24 that are narrower than the groove portion 16. The angle θ ′ of the corner portion edge on the long side can be an obtuse angle.
Although the narrow groove portions 24 and 24 shown in FIG. 4 intersect at right angles, the amount of the underfill agent 22 that reaches the intersecting portion is small, and the underfill is filled into the narrow groove portions 24 and 24 from the intersecting portion. There is no risk of the agent 22 entering.

図１〜図４に示す半導体パッケージでは、溝部１６を台形形状としたが、図５に示す半導体パッケージの様に、溝部１６の端部形状を円弧状に形成することによって、ノズルから滴下した液状のアンダーフィル剤が溝部１６内に進入することを更に一層防止できる。この端部が円弧状に形成された溝部１６によれば、図２に示す様に、配線基板１２の周縁側に回り込んでくるアンダーフィル剤２２に対しても、溝部１６の角部縁を弧状に形成できる。このため、図４に示す細幅溝部２４、２４によって、溝部１６，１６を連結することを要しない。
また、図１〜図５に示す半導体パッケージでは、配線基板１２に搭載した半導体素子２０の各辺に対応して台形形状の溝部１６や端部が円弧状に形成された溝部１６を形成しているが、ノズルから液状のアンダーフィル剤２２の滴下を開始するＡ位置（滴下開始部）に近い溝部１６，１６を、台形形状の溝部１６や端部が円弧状に形成された溝部１６に形成することによって、溝部１６内へのアンダーフィル剤の進入を防止できる。
更に、図１〜図５に示す半導体パッケージでは、配線基板１２に搭載した半導体素子２０の各辺に対応して溝部１６が形成されているが、図７に示す様に、配線基板１２の一方側に片寄って半導体素子２０を搭載し、半導体素子２０の一方側のみに溝部１６を形成してもよい。
また、図１〜図５に示す半導体パッケージの溝部１６の角部縁に、鈍角に形成された複数の屈曲部が設けられていてもよい。
尚、半導体パッケージ１０上に三次元実装する電子部品としては、半導体素子、半導体装置の他に、チップコンデンサーやチップ抵抗等を用いることができる。 In the semiconductor package shown in FIG. 1 to FIG. 4, the groove 16 is trapezoidal. However, as in the semiconductor package shown in FIG. 5, the liquid is dropped from the nozzle by forming the end of the groove 16 in an arc shape. It is possible to further prevent the underfill agent from entering the groove 16. According to the groove portion 16 having the end portion formed in an arc shape, as shown in FIG. 2, the corner edge of the groove portion 16 is also formed against the underfill agent 22 that wraps around the peripheral side of the wiring substrate 12. It can be formed in an arc shape. For this reason, it is not necessary to connect the groove parts 16 and 16 by the narrow groove parts 24 and 24 shown in FIG.
In addition, in the semiconductor package shown in FIGS. 1 to 5, a trapezoidal groove portion 16 and a groove portion 16 having an arc-shaped end portion corresponding to each side of the semiconductor element 20 mounted on the wiring substrate 12 are formed. However, the groove portions 16 and 16 close to the position A (dropping start portion) where the liquid underfill agent 22 starts to be dropped from the nozzle are formed in the trapezoidal groove portion 16 and the groove portion 16 in which the end portion is formed in an arc shape. By doing so, it is possible to prevent the underfill agent from entering the groove 16.
Furthermore, in the semiconductor package shown in FIGS. 1 to 5, the groove 16 is formed corresponding to each side of the semiconductor element 20 mounted on the wiring board 12, but as shown in FIG. Alternatively, the semiconductor element 20 may be mounted on the side and the groove 16 may be formed only on one side of the semiconductor element 20.
Moreover, the some bending part formed in the obtuse angle may be provided in the corner | angular edge of the groove part 16 of the semiconductor package shown in FIGS.
Note that as an electronic component to be three-dimensionally mounted on the semiconductor package 10, a chip capacitor, a chip resistor, or the like can be used in addition to a semiconductor element and a semiconductor device.

１０ 半導体パッケージ
１２ 配線基板
１４ ソルダーレジスト
１６ 溝部
１８ パッド
２０，３０ 半導体素子
２２ アンダーフィル剤
２４ 細幅溝部
３２ ワイヤ
４０ 半導体装置
４２ 接続端子 DESCRIPTION OF SYMBOLS 10 Semiconductor package 12 Wiring board 14 Solder resist 16 Groove part 18 Pad 20, 30 Semiconductor element 22 Underfill agent 24 Narrow groove part 32 Wire 40 Semiconductor device 42 Connection terminal

Claims (3)

配線基板の一面側に形成されたフリップチップ搭載用パッドに半導体素子がフリップチップ方式で搭載され、前記半導体素子と前記配線基板との間にアンダーフィル剤が滴下されて充填された半導体装置であって、
前記配線基板の一面側を被覆するソルダーレジストに溝部が形成され、
前記溝部の底部には複数のパッドが形成され、
前記溝部は、前記半導体素子の周縁部と前記配線基板の周縁部との間に、前記配線基板の周縁部に沿って配置され、
前記アンダーフィル剤の滴下開始部は、前記半導体素子の周縁部と前記溝部との間であり、
前記アンダーフィル剤の滴下開始部近傍の前記溝部の角部縁が、滴下されたアンダーフィル剤の溝部内への進入を防止できるように、鈍角又は円弧状に形成されていることを特徴とする半導体装置。 Semiconductor element is mounted in a flip-chip method to the flip chip mounting pads formed on one surface of the wiring board, a semiconductor device underfill agent is filled is dropped between the wiring board and the semiconductor element And
Grooves are formed in the solder resist covering one side of the wiring board ,
A plurality of pads are formed at the bottom of the groove,
The groove is disposed along the peripheral edge of the wiring board between the peripheral edge of the semiconductor element and the peripheral edge of the wiring board.
The underfill agent dripping start part is between the peripheral part of the semiconductor element and the groove part,
The corner edge of the groove near the dripping start portion of the underfill agent is formed in an obtuse angle or an arc shape so as to prevent the dropped underfill agent from entering the groove. Semiconductor device . 前記溝部の角部縁が鈍角であって、前記アンダーフィル剤の滴下開始近傍の複数の溝部同士が、前記溝部よりも幅狭の細幅溝部によって連結されている請求項１記載の半導体装置。 Wherein a obtuse corner edges of the groove, a plurality of grooves between the dropping start near the underfill agent is, the semiconductor device according to claim 1, wherein are connected by narrow narrow groove than the groove. 前記溝部の底部に形成された複数のパッドは、前記半導体素子の上方に配置される電子部品と電気的に接続される請求項１又は請求項２記載の半導体装置。 It said plurality of pads formed on the bottom of the groove, the semiconductor device of claims 1 or claim 2 wherein the electronic component and being electrically connected to be arranged above the semiconductor device.
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