JP5258368B2 - 多層反射膜付基板の製造方法、反射型マスクブランクの製造方法、及び反射型マスクの製造方法 - Google Patents
多層反射膜付基板の製造方法、反射型マスクブランクの製造方法、及び反射型マスクの製造方法 Download PDFInfo
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- JP5258368B2 JP5258368B2 JP2008118704A JP2008118704A JP5258368B2 JP 5258368 B2 JP5258368 B2 JP 5258368B2 JP 2008118704 A JP2008118704 A JP 2008118704A JP 2008118704 A JP2008118704 A JP 2008118704A JP 5258368 B2 JP5258368 B2 JP 5258368B2
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- film
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- refractive index
- multilayer reflective
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- JMOHEPRYPIIZQU-UHFFFAOYSA-N oxygen(2-);tantalum(2+) Chemical compound [O-2].[Ta+2] JMOHEPRYPIIZQU-UHFFFAOYSA-N 0.000 description 2
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 2
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- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 229910003902 SiCl 4 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 235000010724 Wisteria floribunda Nutrition 0.000 description 1
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Images
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- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008118704A JP5258368B2 (ja) | 2008-04-30 | 2008-04-30 | 多層反射膜付基板の製造方法、反射型マスクブランクの製造方法、及び反射型マスクの製造方法 |
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| Application Number | Priority Date | Filing Date | Title |
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| JP2008118704A JP5258368B2 (ja) | 2008-04-30 | 2008-04-30 | 多層反射膜付基板の製造方法、反射型マスクブランクの製造方法、及び反射型マスクの製造方法 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2013089991A Division JP5568158B2 (ja) | 2013-04-23 | 2013-04-23 | 多層反射膜付基板の製造方法、反射型マスクブランクの製造方法、及び反射型マスクの製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2009272317A JP2009272317A (ja) | 2009-11-19 |
| JP2009272317A5 JP2009272317A5 (enExample) | 2011-05-26 |
| JP5258368B2 true JP5258368B2 (ja) | 2013-08-07 |
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| JP2008118704A Expired - Fee Related JP5258368B2 (ja) | 2008-04-30 | 2008-04-30 | 多層反射膜付基板の製造方法、反射型マスクブランクの製造方法、及び反射型マスクの製造方法 |
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Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102640021B (zh) * | 2009-12-04 | 2014-06-25 | 旭硝子株式会社 | Euv光刻用光学构件及带反射层的euv光刻用衬底的制造方法 |
| JP5673555B2 (ja) * | 2009-12-09 | 2015-02-18 | 旭硝子株式会社 | Ｅｕｖリソグラフィ用反射層付基板、ｅｕｖリソグラフィ用反射型マスクブランク、ｅｕｖリソグラフィ用反射型マスク、および該反射層付基板の製造方法 |
| KR102165129B1 (ko) | 2012-03-30 | 2020-10-13 | 호야 가부시키가이샤 | 마스크 블랭크용 기판, 다층 반사막 부착 기판, 반사형 마스크 블랭크, 반사형 마스크, 투과형 마스크 블랭크, 투과형 마스크 및 반도체 장치의 제조 방법 |
| US9507254B2 (en) | 2012-09-28 | 2016-11-29 | Hoya Corporation | Method of manufacturing substrate with a multilayer reflective film, method of manufacturing a reflective mask blank, substrate with a multilayer reflective film, reflective mask blank, reflective mask and method of manufacturing a semiconductor device |
| JP6126847B2 (ja) * | 2012-12-29 | 2017-05-10 | Hoya株式会社 | 多層反射膜付き基板の製造方法、反射型マスクブランクの製造方法、及び反射型マスクの製造方法 |
| KR20210089406A (ko) | 2020-01-08 | 2021-07-16 | 주식회사 에스앤에스텍 | 극자외선용 반사형 블랭크 마스크 및 포토마스크 |
| JP7226389B2 (ja) * | 2020-04-28 | 2023-02-21 | 信越化学工業株式会社 | 反射型マスクブランク用膜付き基板及び反射型マスクブランク |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040159538A1 (en) * | 2003-02-13 | 2004-08-19 | Hans Becker | Photo mask blank, photo mask, method and apparatus for manufacturing of a photo mask blank |
| JP4666365B2 (ja) * | 2005-10-14 | 2011-04-06 | Ｈｏｙａ株式会社 | 多層反射膜付き基板、その製造方法、反射型マスクブランクおよび反射型マスク |
| KR101308838B1 (ko) * | 2005-12-12 | 2013-09-13 | 아사히 가라스 가부시키가이샤 | Ｅｕｖ 리소그래피용 반사형 마스크 블랭크, 및 그 마스크블랭크용 도전막 부착 기판 |
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| JP2009272317A (ja) | 2009-11-19 |
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