JP5256407B2 - Bonding method, device made by this method, bonding apparatus, and substrate bonded by this method - Google Patents

Description

  The present invention relates to a bonding technique for bonding substrates having a bonding portion made of metal formed on the surface of a substrate body.

  Conventionally, in order to prevent deterioration of semiconductor devices such as surface acoustic wave devices and RF devices, MEMS devices having mechanically movable parts, or device electrodes due to oxidation or the like, a main body portion of these devices is formed. A technique is known in which a device substrate is covered with a lid-like member, and a body portion such as an operation portion or a vibration portion of a device circuit of the device on the device substrate is shielded from an external atmosphere. For example, in Patent Document 1, a metal bonding portion is formed in a contour shape surrounding a device main body on a bonding surface of a device substrate provided with a device main body to be shielded from an external atmosphere. A technique is disclosed in which a main body of a device is shielded from an external atmosphere by bonding a lid substrate serving as a lid to the bonding portion. That is, if the device substrate and the lid substrate are bonded in a predetermined atmosphere such as an inert gas or a vacuum, a space formed by enclosing the main body of the device in a contour shape by a metal bonding portion between the bonding surfaces of both substrates. The main body of the device can be shielded from the external atmosphere by sealing the predetermined atmosphere.

JP 2005-191556 A

  By the way, in the above-described conventional technology, the metal joint formed on the joint surface of the device substrate and the metal joint formed on the joint surface of the lid substrate are surfaced with an energy wave that is an atomic beam, an ion beam, or plasma. After activation, the metal joints are brought into contact with each other, and the substrates are joined together by applying pressure in a state where the two substrates are overlapped. For example, a device substrate on which a plurality of device body portions are formed on a device substrate and a plurality of contoured metal joint portions are formed so as to surround each of the device body portions and the lid substrate are bonded to each other. In this case, the plurality of metal bonding portions of the device substrate and the metal bonding portion of the lid substrate can be bonded to each other by pressurizing both superimposed substrates uniformly over the entire surface.

  At this time, the metal joints on both boards are closely attached to ensure that the atmosphere inside and outside the space formed by surrounding the body of the device with a metal joint between the joint surfaces of both boards is cut off. Need to be joined. Therefore, so that both substrates can be uniformly pressed over the entire surface, the overlapped substrates are pressed via an elastic material or pressed via a spherical bearing so as to improve the parallelism of the two substrates. It is configured.

  However, even with such a configuration, there is a possibility that the stacked substrates cannot be uniformly pressed over the entire surface due to unevenness of the stage holding the substrate, unevenness of the substrate itself, and the like. As described above, when a plurality of contoured metal joints are formed on the joint surface of the device substrate, if both the substrates cannot be uniformly pressed over the entire surface, a part of the plurality of metal joints is There is a possibility that a predetermined atmosphere cannot be sealed in the space surrounded by the metal joint that is not joined without joining to the other metal joint. That is, the main body of the device in the space surrounded by the non-joined metal joint cannot be shielded from the external atmosphere, and further technical improvement has been demanded. There is also a problem that a large void remains in the center due to mixing of particles (dust).

  The present invention has been made in view of the above problems, and a predetermined atmosphere is enclosed in a space formed by a joint portion between the joint surfaces of both substrates and surrounded by a contour, thereby removing the space from the external atmosphere. The purpose is to provide a technology that can reliably shut off.

In order to solve the above problems, the bonding method according to the present invention, in the bonding method of bonding the substrate to each other with a bonding portion made of metal formed on the surface of the substrate main body, wherein the joint portion of the substrate of the hand is And at least one internal joint projecting to surround a predetermined region of the surface of the substrate body, and an outer joint joint projecting from the periphery of the substrate body so as to surround all the internal joints. and the other of the joint portion of the substrate, the substrate has a metal film formed on the surface of the body, the metal film and the pressurizing means of the outer peripheral joint portion of said one substrate and the other board pressurized and joined by said tentative bonding step of encapsulating the predetermined atmosphere in a space formed by being surrounded by the contour by the outer peripheral joint between the joint surfaces of the substrates, after the temporary bonding step, the the inner contact of one of the substrates Parts and the said metal layer of the other substrate is characterized by comprising a main bonding step of pressurizing joined by said pressurizing means (claim 1).
Further, in the bonding method of bonding substrates having a bonding portion made of metal formed on the surface of the substrate body, each of the bonding portions of the both substrates is formed so as to protrude around a predetermined region on the surface of the substrate body. And at least one inner joint, and an outer peripheral joint formed so as to protrude from a peripheral portion of the substrate body so as to surround the entire inner joint, and the outer joint and the other substrate of the one substrate. Temporary bonding in which a predetermined atmosphere is sealed in a space formed between the bonding surfaces of the two substrates and surrounded by a contour shape between the bonding surfaces of the two substrates. And a main bonding step of bonding the internal bonding portion of the one substrate and the internal bonding portion of the other substrate by pressing with the pressing means after the temporary bonding step. As That (claim 2).

The bonding apparatus according to the present invention is a bonding apparatus for bonding substrates having a bonding portion made of metal formed on a surface of a substrate body, and the bonding body of the substrate body is used as the bonding portion of any one of the substrates. At least one internal joint is formed so as to surround a predetermined area of the surface, and an outer peripheral joint is formed so as to protrude from the periphery of the substrate body so as to surround all the internal joints. The joint of the other substrate As described above, a metal film is formed on the surface of the substrate body, a head that holds one of the substrates, a stage that holds the other substrate, and at least one of the head or the stage is a bonding surface of the substrate having a generally vertical direction capable pressurization control a vertical drive mechanism, contact and said metal layer of the outer peripheral joint part and the other of said substrates of one of the substrate pressurizes the And, wherein the temporary bonding means for temporarily bonded by sealing a predetermined atmosphere in a space formed by being surrounded by the contour by the outer peripheral joint between the joint surfaces of the substrates, provided with the temporary joining means separately from is, after said provisional bonding, is characterized by comprising a main bonding means for the said metal layer of said substrate of said inner joint part and the other side of one of the substrates pressurized present joined by bonding ( Claim 1 3 ).
Further, in the bonding apparatus for bonding substrates having a bonding portion made of metal formed on the surface of the substrate body, as the bonding portion of each of the two substrates, at least one surrounding the predetermined region on the surface of the substrate body An internal joint is formed in a protruding manner, and the outer peripheral joint is formed so as to surround the entire inner joint at the peripheral edge of the substrate body, and a head for holding one of the substrates and the other substrate are held. And a vertical drive mechanism capable of controlling the pressure of at least one of the head or the stage in a direction substantially perpendicular to the bonding surface of the substrate, and the outer peripheral bonding portion of one of the substrates and the other A predetermined atmosphere is formed in a space that is formed by pressurizing and bonding the outer peripheral bonding portion of the substrate and being surrounded by the outer peripheral bonding portion between the bonding surfaces of the two substrates. Temporary bonding means for enclosing and temporarily bonding, and the temporary bonding means are provided separately, and after the temporary bonding, the internal bonding portion of one of the substrates and the internal bonding portion of the other substrate are added. And a main joining means for joining by pressurizing and performing the main joining (claim 14).

  In the invention configured as described above, at least one internal joint is formed so as to project around a predetermined region on the surface of the substrate body as the joint of at least one substrate, and all the internal joints are formed on the peripheral edge of the substrate body. Is formed by projecting the outer peripheral joint part and pressurizing and temporarily joining the outer peripheral joint part and the joint part of the other substrate, so that the outer peripheral joint part is surrounded by the outer peripheral joint part between the joint surfaces of both substrates. A predetermined atmosphere, that is, an atmosphere of a space where temporary bonding is performed can be enclosed in the space to be formed. Here, the predetermined region is a region where an operation part or a vibration part of a circuit is formed.

  Then, by pressurizing the internal joint formed inside the space formed by the outer peripheral joint between the joint surfaces of the two substrates and the joint of the other substrate and performing the main joining, Since the predetermined atmosphere is sealed in the space at the time of temporary bonding, the predetermined atmosphere can be sealed in the space formed by the inner bonding portion between the bonding surfaces of both the substrates. In this way, by temporarily bonding the outer peripheral bonding portion first, a predetermined atmosphere can be sealed in the space surrounded by the outer peripheral bonding portion between the bonding surfaces of both substrates, that is, the space in which the inner bonding portion is formed, Then, the main bonding between the internal bonding portion and the bonding portion of the other substrate can be reliably performed in the predetermined atmosphere. Therefore, a predetermined atmosphere can be sealed in a space formed between the bonding surfaces of the two substrates and surrounded by the bonding portion so as to be surely cut off from the external atmosphere.

  In addition, the internal bonding portion and the outer peripheral bonding portion formed on at least one of the substrates and the bonding portion of the other substrate can be brought into close contact with each other by pressurization, and temporary bonding and main bonding can be reliably performed. . Even when voids due to particles remain, the voids can be crushed by individually pressing in the main joining.

Further, the prior provisional bonding step, the joint portion of one of the substrate even without least an energy wave is an atom beam or an ion beam or plasma may be further provided constituting a surface activation step of surface activating (billing Item 3 ). Further, the prior to the temporary joining by the temporary bonding means, even further comprises forming the surface activation means for surface activation of the joint portion of one of the substrate even without least an energy wave is an atom beam or an ion beam or plasma Good (Claim 15 ).

  With such a configuration, prior to the temporary bonding, the outer peripheral bonding portion and the inner bonding portion made of metal of both substrates are surface-activated by an energy wave that is an atomic beam, an ion beam, or plasma, so that the temporary bonding of both substrates is performed. Bonding and main bonding can be performed reliably.

  The surface activation of the joint by energy waves is a process for joining the joints at low temperature and solid phase by activating the joint interface of the joints by energy waves. In other words, organic materials and oxide layers attached to the surface of the joint made of metal are removed by etching by irradiating energy waves to bond the dangling bonds of the metal atoms constituting the joint. The surface of the joint can be activated by appearing on the surface of the joint. By bringing the joints whose surfaces are activated in this way into contact with each other, dangling bonds on the surface of the joint can be joined to join the joints. Hereinafter, the surface activation of the joint by the energy wave is referred to as a surface activation treatment of the joint.

  Further, for example, an inert Ar gas can be adopted as a reaction gas that generates energy waves. Since the Ar atom has a large atomic weight and high etching power, the surface activation treatment of the junction can be performed very efficiently by employing an Ar energy wave composed of an Ar beam, an Ar ion beam or Ar plasma. In addition, since Ar gas is an inert gas, no chemical reaction occurs regardless of the metal composed of the joint, so that the surface of the joint is not affected chemically. An activation process can be performed. The Ar beam, Ar ion beam, or Ar plasma can be generated by a well-known apparatus, and thus detailed description thereof is omitted.

  Furthermore, when the surface of the joint is activated by energy waves, it is desirable to etch at least 1 nm or more in order to reliably remove the deposit layer attached to the surface of the joint made of metal.

By the way, the surface of the joint is activated by an energy wave in a high vacuum of 10 ⁻⁵ Torr or less to remove the adhering layer made of an oxide film or organic matter attached to the surface of the joint, and it is left as it is in the atmosphere. If the joints are brought into contact with each other in a high vacuum without being exposed, or if the joints are brought into contact in an inert gas atmosphere such as Ar gas or nitrogen gas, the deposit layer reattaches to the joint. Therefore, the joints can be joined to each other. On the other hand, after the surface activation treatment of the bonded portion by energy waves, the bonded portions are brought into contact with each other in a low vacuum of 10 ⁻⁵ Torr or higher or in the atmosphere, or position adjustment (alignment) between the two substrates is performed in the air. If the joints are brought into contact with each other after that, an adhesion layer such as an oxide film or an organic substance is re-formed on the joint surface and the joint surface becomes inactive. We cannot join each other.

  However, immediately after the surface activation treatment of the joint, even if the deposit layer is reattached, if it is thin, if the bond layer is pressed by pressing both substrates by contacting the joints, Since the bonding interface on the surface of the bonding portion spreads and a new surface appears on the surface of the bonding portion, the bonding portions can be bonded to each other.

  Therefore, after surface activation treatment of the outer peripheral joint made of metal formed on the substrate body and the inner joint with energy waves, the adhesive layer reattached to the outer peripheral joint is pushed through by pressing both substrates. Temporary joining can be performed. By performing temporary bonding, a predetermined atmosphere, that is, the atmosphere of the space in which temporary bonding is performed, is enclosed in a space formed by the outer peripheral bonding portion between the bonding surfaces of both substrates in a contour shape, and the space The internal atmosphere and the external atmosphere can be shut off. Further, by further pressurizing both the substrates after the temporary bonding, the internal bonding portion can be finally bonded in the space surrounded by the outer peripheral bonding portion in which a predetermined atmosphere is enclosed, and the internal bonding portion is connected between the bonding surfaces. Thus, the predetermined atmosphere can be enclosed in a space surrounded by a contour.

  In addition, by activating the surface of the joint portion by energy waves and breaking the deposit layer reattached to the joint portion, the joint portions can be joined by the atomic force of the metal constituting the joint portion. Even in a vacuum atmosphere or in an inert gas atmosphere, the joints can be joined at a room temperature of room temperature to 180 ° C. or less. In addition, joint strength can be improved by using heating at about 150 ° C. However, even when joining at a temperature lower than 150 ° C., the joints can be joined with sufficient joint strength compared to conventional joining by heat diffusion. it can. In addition, compared with the conventional method using lead-tin solder that can join metals at a low temperature, the joints can be joined at a low temperature of 183 ° C. or lower, which is the melting point of lead-tin solder, and 150 ° C. or lower. .

  In addition, when the bonded portion of the substrate to be bonded is made of a different material, if the bonded portion is bonded by melting and diffusing such a different material, it becomes brittle or weak in material, There is a risk of warping or cracking due to the difference in expansion coefficient. However, by jointly using the surface activation treatment, the joints can be joined in a solid state under a low temperature heating of room temperature to 180 ° C. or less. Therefore, low temperature heating of room temperature to 180 ° C or lower when bonding substrates that are not heat resistant due to bonding of substrates that are vulnerable to heat, or distortion caused by thermal expansion. It is practical because it can be joined below.

  In addition, when the bonded portion is melted, the molten metal does not spread evenly, and therefore, when the molten metal is solidified, there is a problem that the substrate is pulled in the direction where the molten metal is more and the position shift occurs. However, since joints can be joined in a solid phase by using a surface activation treatment in combination, it is more practical. Note that the bonding temperature is preferably 150 ° C. or lower and 100 ° C. or lower, more preferably room temperature.

  By the way, as described above, immediately after the surface activation treatment, the deposit layer of organic matter, oxide film, dust or dust is thin even if it is reattached. Then, the bonding interface on the surface of the bonding portion spreads and a new surface appears on the surface of the bonding portion, so that the bonding portions can be bonded to each other. Thus, in order to make it easy to push through the deposit layer, it is preferable that the metal constituting the joint is low in hardness and easily deformed. As a result of various experiments, the inventor has found that it is particularly effective for room-temperature bonding that the hardness of the joint is 200 Hv or less, preferably 20 Hv to 200 Hv in terms of Vickers hardness.

  As experimental conditions, Ar plasma was used as an energy wave, and the Ar plasma was irradiated at an intensity of 100 W for 30 seconds to perform the surface activation treatment of the joint. Then, after surface activation treatment with Ar plasma, an attempt was made to press and bond the substrates together in an Ar gas atmosphere. As a result of the above, the joining between the joints made of Ni plating with a hardness of 300 Hv or chrome plating with 600 Hv was poor, but copper, gold, Al, tin (gold-tin alloy) with metals having a Vickers hardness of 200 Hv or less. In other words, the joints composed of (including) were joined well and a practically sufficient joining strength was obtained.

  If the region is further limited, it can be considered that the Vickers hardness of the joint is in the range of 20Hv to 200Hv. It should be noted that when bonding is performed at a strength of 30 g / bump or more corresponding to 80% of the maximum strength, it is determined that the bonding is performed well, and when bonding is performed at a strength of 15 g / bump or less, it is determined that the bonding is defective. did. In addition, when a metal joint is formed on the entire surface of a substrate such as a wafer and the substrates are surface-bonded, the joint strength is expressed by the tensile strength after joining, and if the joint strength is 20 MPa or more, it is determined that the joint is good. If the bonding strength is 10 MPa or less, it may be determined that the bonding is defective.

  Further, after the surface activation treatment by Ar plasma, bonding in the atmosphere was possible when the bonding portion was formed of gold or copper. In particular, when the bonding portion is made of gold, the bonding strength in an Ar gas (inert gas) atmosphere is maintained even after one hour has passed after exposure to the atmosphere after the surface activation treatment. Bonding was possible with almost the same strength. This is presumably because gold is difficult to oxidize, and therefore, an adherent layer such as an organic substance or an oxide film hardly adheres again to the surface of the joint after the surface activation treatment. In this way, since bonding is possible even in the air, not in an inert gas atmosphere or a vacuum atmosphere, by performing temporary bonding in the air, a contour is formed by the outer peripheral bonding portion between the bonding surfaces. An air atmosphere can be enclosed in a space formed by being surrounded.

  Note that after the surface activation treatment of the bonding portion, alignment of the substrates having the bonding portion is performed in the air, or when the substrate having the bonding portion is transported in the air, an oxide film or an organic substance is formed on the bonding portion. Such a deposit layer is considered to be easily reattached. However, as described above, the substrates can be joined to each other by pressurizing and pressing the reattached adhered layer.

  Further, when the substrates were joined together, the substrates could be joined more firmly by pressurizing the substrates with a pressing force of 150 Mpa or more. At this time, when the metal constituting the joint was gold, copper, Al, tin (including a gold-tin alloy), or a metal base material plated with gold, it was possible to join particularly well. . In addition, as an energy wave for performing the surface activation treatment, Ar plasma has been described as an example, but the same result was obtained even when the surface activation treatment was performed with an Ar atom beam or an Ar ion beam.

  Note that the surface activation treatment of the joint portion by energy waves and the treatment of temporarily joining or main joining the substrates on which the joint portion subjected to the surface activation treatment are formed may be performed by separate apparatuses. With such a configuration, even if the substrate after the surface activation treatment by the energy wave in the device for performing the surface activation treatment is exposed to the atmosphere and transported to the temporary joining device for performing temporary bonding, the temporary activation device is used. In the bonding apparatus, the substrates can be temporarily bonded to each other by pushing through a deposit layer such as an oxide film or an organic substance reattached to the bonded portion during conveyance.

  Moreover, you may perform the process from the surface activation process of a junction part to temporary joining, without exposing to air | atmosphere. With such a configuration, since the process from the surface activation process to the temporary bonding is performed without being exposed to the atmosphere, it is ensured that the deposit layer is reattached to the bonded part after the surface activation process of the bonded part. Can be prevented.

  Moreover, you may perform from the surface activation process to the process which carries out temporary joining with one apparatus incorporating the function which performs both processes. By performing from the surface activation process of the bonded portion formed on the substrate to the process of temporarily bonding with one apparatus, there is no need to transport the substrate subjected to the surface activation process of the bonded portion to the temporary bonding apparatus, It is possible to more effectively prevent deposits such as floating matter (dust and dust), organic matter, and oxide film from reattaching to the joint and re-forming the deposit layer.

  Further, if the surface activation process and the temporary bonding process are performed in the same chamber, the reattachment of the deposit layer to the bonded portion can be prevented more effectively. Further, by setting the inside of the chamber to a predetermined atmosphere, temporary bonding between the substrates subjected to the surface activation treatment can be easily performed in a predetermined atmosphere in a vacuum atmosphere, an enclosed gas atmosphere, or an air atmosphere. In addition, a predetermined atmosphere can be easily enclosed in a space formed by the outer peripheral joint between the two substrates and surrounded by a contour. In addition, the surface activation treatment of the joint in one chamber, the gas replacement treatment in the chamber (if necessary), and the substrates subjected to the surface activation treatment on the joint are temporarily joined to each other. By performing the process of enclosing a predetermined atmosphere in the space formed by the outer peripheral joint in between, it is possible to reduce the size and cost of the apparatus that performs the surface activation process and the temporary bonding process.

Further, a well-known ion beam or atomic beam may be adopted as the energy wave, but in order to generate the ion beam and the atomic beam, a high vacuum atmosphere of about 10 ⁻⁸ Torr is required. In order to achieve a high vacuum, there is a problem in that the cost of the apparatus is increased. Therefore, if plasma is used as the energy wave, the degree of vacuum for generating the plasma may be about 10 ⁻² Torr, so that plasma can be generated with a simple device, resulting in a compact device. Cost reduction can be achieved. In addition, if Ar gas is employed as a reaction gas for generating plasma, since the Ar gas is inactive, a chemical reaction does not occur on the surface of the surface to be activated and the etching ability is high. The surface activation treatment of the joint portion can be performed efficiently.

In addition, in order to remove the reactive gas ions implanted into the surface of the bonding portion or the dust and dirt generated by etching after the surface activation processing of the bonding portion formed on the substrate or during the surface activation processing, The pressure may be reduced to 10 ⁻³ Torr or less. Further, in order to remove reactive gas ions such as Ar ions implanted into the surface of the joint, surface activation treatment can be performed while using heating at about 100 to 180 ° C. in combination.

  Note that the plasma can be generated by an electric field generated by an alternating power source that switches + and − directions. As such an alternating power source, a well-known RF plasma generating power source or a pulse wave generating power source can be employed.

Further, the peripheral portion of the two substrates in the temporary bonding step may be set higher than the other peripheral edge (claim 4).

  With such a configuration, the height of the peripheral edge portions of both substrates in the temporary bonding step is made higher than that other than the peripheral edge portion, and therefore, the peripheral edge portion of the substrate body is formed so as to surround all the internal bonding portions. Temporary joining which joins the outer periphery joined part and the joined part of the other substrate can be performed reliably. Therefore, a predetermined atmosphere is enclosed in a space formed by the outer peripheral bonding portion between the bonding surfaces of both substrates in a contoured manner, and the internal atmosphere and the external atmosphere of the space are more reliably blocked. be able to.

Further, when the pressure of the two substrates by the pressurizing means in the present bonding process may be performed under pressure while shifting the pressing position (claim 5). Further, the present bonding means, e Bei pressurizing means for pressurizing while shifting the pressing position for pressing the two substrates may be configured to perform the present bonded by the pressurizing means (claims 1-6).

Further, the main bonding step may be performed by collectively pressurizing the entire surfaces of the both substrates by a high-pressure press unit as the pressurizing unit (Claim 6 ). Further, the present bonding means, e Bei high pressure pressing means for pressurizing batch pressure over the entire surface of the two substrates as pressurizing means, the may be of a configuration in which the present bonded by high pressure pressing means (claims 1-7).

Further, the main joining step may be performed by passing the both substrates between the pressure rollers as the pressure means and applying pressure (Claim 7 ). Further, the present bonding means, e Bei pressure roller for pressing by passing the two substrates as pressurizing means may be configured to perform the present bonded by the pressure roller (claims 1-8).

  With such a configuration, since it is possible to apply pressure throughout the entire surfaces of both substrates in the main bonding, all of the internal bonding portions formed inside the outer peripheral bonding portion are connected to the bonding portion of the other substrate. Can be reliably joined. In particular, when a void remains, the method using individual pressing or a roller is effective as a method for crushing the void.

  By the way, a technique is known in which a plurality of metal bumps are formed as bonding portions on a substrate and the substrates are electrically connected to each other by bonding the metal bumps. With such a configuration, even if there are metal bumps that are not in close contact with the other metal bump and are partially bonded due to the inability to pressurize both substrates uniformly over the entire surface, the metal bumps are in contact with each other. As long as the electrical conduction state is secured, there is no practical problem. However, as in the present invention, when a predetermined atmosphere is enclosed in a space formed by a joint portion between the joint surfaces of both substrates in a contour shape, the entire contour joint portion is connected to the other joint portion. If not tightly bonded, the atmosphere inside the space flows out from the non-adhered portion of the joint, and not only can the predetermined atmosphere not be sealed in the space, but also the space from the external atmosphere. It cannot be blocked.

  However, as described above, after performing temporary bonding in which a predetermined atmosphere is sealed in a space surrounded by the outer peripheral bonding portion between the two substrates, the inner bonding portion is pressurized by pressing both substrates over the entire surface. By performing the main bonding, the inner bonding portion and the other bonding portion can be securely bonded to each other, and the space formed by the inner bonding portion is bonded to the outer periphery by a predetermined atmosphere, that is, temporary bonding. It can be set as the atmosphere enclosed by the space enclosed and formed by a part. In addition, according to the present technology, the region can be sealed in a vacuum simultaneously with the electrical connection by the metal bump. By doing so, it is possible to perform electrical connection and sealing in a lump, which is efficient, and there is no other method that can be compatible with low-temperature bonding, and it is an epoch-making method.

Further, the space may be sealed in a vacuum atmosphere by executing the temporary bonding step in a vacuum (claim 8 ). In addition, the head, the stage, the vertical drive mechanism, and the temporary bonding means are provided in the decompression chamber, and the space is sealed in a vacuum atmosphere by temporarily bonding the substrates in a vacuum. The structure to do may be sufficient.

  With such a configuration, by performing temporary bonding in a vacuum, a space surrounded by the outer peripheral bonding portion can be easily sealed in a vacuum atmosphere. In addition, when surface activation processing is performed prior to temporary bonding, if the surface activation processing and temporary bonding are performed in the same chamber, after the surface activation processing, the reaction gas is discharged from the chamber and evacuated. Thus, temporary bonding can be easily performed in a vacuum by temporarily bonding the inside of the chamber to a vacuum atmosphere.

Also, it may be sealed to the sealed gas in the space by executing the temporary bonding step in filling gas (claim 9). The decompression chamber includes the head, the stage, the vertical drive mechanism, and the temporary joining means. The interior of the decompression chamber is replaced with a sealed gas, and the substrates are temporarily placed in the sealed gas. The sealing gas may be sealed in the space by bonding.

  With such a configuration, by performing temporary bonding in the sealed gas, it is possible to easily seal a predetermined sealed gas in a space formed by being surrounded by the outer peripheral joint portion. In addition, when the surface activation process is performed prior to the temporary bonding, if the surface activation process and the temporary bonding are performed in the same chamber, after the surface activation process, the reaction gas is discharged from the chamber to fill the sealed gas. By substituting and making the inside of the chamber into a sealed gas atmosphere, and temporarily bonding as it is, temporary bonding can be easily performed in the sealed gas.

  If the sealed gas is an inert gas such as Ar gas or nitrogen gas, the substrate will not be affected by corrosion, etc., and deterioration due to oxidation inside the space in which the sealed gas is sealed will be prevented. it can. Moreover, if the sealing gas is Ar gas, the surface of the bonding portion is activated by an energy wave using Ar gas as a reaction gas, so that the reaction gas atmosphere used for the surface activation treatment can be used as it is. Is good.

Moreover, you may make it perform the said main joining process in air | atmosphere (Claim 10 ).

  With such a configuration, even if the temporary bonding is performed in a predetermined atmosphere in the chamber and then the main bonding is performed in the air, the space formed between the two substrates is surrounded by the outer peripheral bonding portion. Since the predetermined atmosphere is sealed in, the predetermined atmosphere is sealed in the space formed by the internal joint after the main joining, and the air is mixed into the space surrounded by the internal joint. There is no. Therefore, by performing the main joining in the atmosphere, the amount of enclosed gas used can be reduced and the cost can be reduced. In addition, if temporary joining is performed in air | atmosphere, air atmosphere can be enclosed in the space enclosed and formed by the outer periphery junction part.

Moreover, you may make it heat both said board | substrates at the time of joining in the said temporary joining process and / or the said main joining process (Claim 1 1 ). Moreover, it is good also as a structure which further comprises the heating means which heats both said board | substrates, and heats both said board | substrates at the time of joining in the said temporary joining means and / or the said main joining means (Claim 19 ).

  With such a configuration, it is possible to perform temporary bonding and / or main bonding by heating the bonding portions made of metal by a thermal diffusion method or by melting the bonding portions.

  In addition, when performing temporary bonding and main bonding in combination with surface activation treatment, residual stress in the bonded portion due to surface roughness and waviness of the substrate can be obtained by annealing at room temperature to 180 ° C. during the bonding. And strain can be removed, and the bonding strength can be improved.

Moreover, the device concerning this invention is a device formed by the joining method in any one of Claim 1 thru | or 10, Comprising: It consists of a semiconductor device or a MEMS device (Claim 1 2 ).

  With such a configuration, the main body portion of the MEMS device having a main body portion of a semiconductor device such as a surface acoustic wave device or an RF device, or a mechanical movable portion in a region surrounded by the inner joint portion of at least one of the substrates. Or after forming a device electrode or the like and performing temporary bonding and main bonding between the substrate and the other substrate, and then dicing the bonded substrate for each region surrounded by the internal bonding portion. The device can be provided in which the main body and the electrode of the device are surrounded by the internal joint and are shielded from the external atmosphere. In particular, by enclosing an inert gas (Ar gas, nitrogen gas, etc.) atmosphere or a vacuum atmosphere in the space surrounded by the internal joint, the device body and electrodes of the device in the space deteriorate due to reasons such as oxidation. Can be prevented.

  Further, if the temporary bonding and the main bonding in the present invention are performed by the surface activation treatment of the bonded portion by the energy wave, not by the adhesive, the diffusion bonding by high temperature heating or the ultrasonic vibration bonding, the following advantageous effects are obtained. Can be played. That is, the above-mentioned devices are sensitive to heat, or are composed of a combination of different materials. When heated to a high temperature, distortion may occur due to thermal expansion, or warpage may occur due to a difference in linear expansion coefficient. In the case where there is a problem that the material cannot be bonded to a high temperature due to cracking, the substrate can be bonded at a low temperature by surface activation of the bonding portion.

  Further, in the case where the material constituting the substrate contains a resin, if the substrates are heated at a high temperature when they are joined together, gas or moisture may be generated. If the main body of the device described above is not resistant to these gases and moisture, the substrate is gasified from the substrate by joining the substrates at a low temperature using the surface activation treatment of the joint. And generation of moisture can be prevented.

  In addition, if the above-described device has a vibrating part or a mechanically operating part, using an adhesive for bonding the substrates may cause these vibrating or operating parts to solidify. . However, it is possible to prevent the vibration part and the operation part from solidifying by joining the substrates together using the surface activation treatment of the joint part.

  In addition, when surface activation treatment is used together for bonding between substrates, the time after the surface activation treatment of the bonding portion, the type of reactive gas of the energy wave, and bonding are performed based on the results of various experiments by the present inventors. It has been confirmed that the heating temperature required for joining differs depending on the type of atmosphere at the time, the moisture content (humidity) of the atmosphere, and the like. According to the result, as described above, if the surface of the joint portion is made of gold that is not easily oxidized, the surface activation treatment is performed within 100 hours. Bonding was possible even by heating. In addition, it is possible to bond the joint in a solid phase by applying a surface activation treatment with an energy wave and pressurizing the joint made of metal. However, since metal molecules are directly bonded to each other at the bonded interface of the bonded portion. Even if the substrate is later heated to a high temperature, for example, 350 ° C., the metal molecules at the joint are only diffused, so that the joint strength does not decrease and the resistance value does not increase. The device created in this way is highly reliable even in high temperature environments.

Moreover, the board | substrate concerning this invention is a board | substrate joined by the joining method in any one of Claim 1 thru | or 11, Comprising: The said junction part protrudes each surrounding the predetermined area | region of the surface of the said board | substrate body. a plurality of inner joints formed, is characterized by comprising said outer peripheral joint all the plurality of inner joints are surrounded by protruding the periphery of the substrate main body (claim 20). The substrate according to the present invention is a substrate to be bonded by the bonding apparatus according to any one of claims 1 3 to 1 9, wherein the joint is enclosed respectively predetermined regions of the surface of the substrate body It is characterized by comprising a plurality of projecting internal joints and a peripheral joint projecting around the periphery of the substrate body so as to surround all of the plurality of internal joints.

With such a configuration, a plurality of internal joints project from the substrate body made of resin, or made of resin, Si, SiO ₂ , ceramic, LT (oxide single crystal), etc., and surround all the internal joints. Since the joints are protruding, multiple devices can be formed at the same time by forming device circuits, etc. in a plurality of regions surrounded by the internal joints and performing temporary joining and main joining between the substrates. In addition, the device circuit and the like of the device can be sealed in the space surrounded by the internal joint as described above, and can be reliably shielded from the external atmosphere.

Also, may be a configuration in which the gold film is formed on the joint portion is formed of gold, or the joint surface (claim 21).

  With such a configuration, gold has a low hardness, and compared to other metals, it is particularly difficult to oxidize in the atmosphere. Therefore, when using a surface activation treatment for joining substrates together, the surface activation treatment is performed. Even if it is exposed to the atmosphere later, the deposit layer becomes thin and easily broken. Therefore, after the surface activation treatment of the bonding portion, the substrate is transported in the atmosphere, and then the temporary bonding between the substrates in a predetermined atmosphere is within several hours after the surface activation treatment. Can be joined.

  Also, gold does not corrode and does not generate gas when heated. Therefore, a practical joint can be formed as a sealing material that seals a predetermined atmosphere in a space formed by the joint between the two substrates and surrounded by a contour, and blocks the space from the external atmosphere. In addition, since the melting point of gold is very high, after bonding the substrates, the reliability at high temperature is high and practical.

  In addition, if a gold film is formed on the surface of the bonding part (bonding surface), in the case where the surface activation treatment is used together with the bonding, it is difficult for organic substances to reattach after the surface activation treatment. The substrates can be joined together. In addition, after bonding the substrates, heating and diffusing the gold film on the surface of the bonding portion into the metal constituting the bonding portion results in bonding between the metals constituting the bonding portion after diffusion. The strength is increased and the bonding interface can be made of the same metal material. At this time, the gold film can be diffused even at room temperature, but the gold film can be diffused more quickly by heating. Note that the term “diffusion” means that particles composed of molecules and atoms move and spread, and that particles diffuse into the joint at the joint interface between the joints made of metal.

  In addition, in an electrical functional device such as a semiconductor or a MEMS device, switching from a conventional Al electrode to a copper electrode is demanded from the relationship of current capacity. However, in the conventional joining method, joining of copper is not practical because the joining temperature becomes high. Therefore, the bonding temperature can be lowered by forming a gold film on the surface of the bonding portion made of copper and using the surface activation treatment together. Further, bonding can be performed in any gas atmosphere or air, even in a vacuum atmosphere or in an inert gas atmosphere. Moreover, if gold | metal | money is diffused in copper (joining part) after joining, it will become joining of copper and is practical.

  In this way, by forming the joint with gold or forming a gold film on the surface of the joint made of metal, the gold is not corroded even in a vacuum atmosphere or an inert gas atmosphere. Since a deposit layer such as a film or an organic substance is also difficult to adhere, particularly when a surface activation treatment is used in combination, the joining can be reliably performed even in a vacuum atmosphere or in an inert gas atmosphere. Therefore, the substrates can be temporarily joined in a gas atmosphere other than an inert gas, so that an arbitrary gas can be enclosed in a space formed between the two substrates and surrounded by the outer peripheral joint.

Moreover, the structure currently formed lower than the hardness of the said internal junction part may be sufficient as the hardness of the said outer periphery junction part (Claim 2 2 ).

  With such a configuration, since the hardness of the outer peripheral joint portion is lower than the hardness of the inner joint portion, when the substrates are temporarily joined by pressurization, the outer peripheral joint portion is ahead of the inner joint portion. Since the outer peripheral bonding portion and the bonding portion of the other substrate are in close contact with each other, temporary bonding can be reliably performed.

The height from the surface of the substrate main body of the outer peripheral joint, may be of a configuration that is formed higher than the height from the surface of the inner joint (claim 2 3).

  With such a configuration, since the height from the surface of the substrate body of the outer peripheral joint portion is formed higher than the height from the surface of the substrate body of the inner joint portion, when temporarily joining the substrates, Since the outer peripheral joint comes into contact with the joint of the other substrate before the inner joint, temporary joining can be reliably performed.

  In addition, the junction part of arbitrary height can be formed in the surface of a board | substrate main body with arbitrary metal materials by metal plating or a vapor deposition method.

Moreover, the cross section of the said internal junction part or the said outer periphery junction part may be formed in the pointed shape (Claim 2 4 ).

  With such a configuration, since the cross section of the internal joint portion or the outer peripheral joint portion is formed in a pointed shape, at least one of the inner joint portion and the outer peripheral joint portion is easily crushed by being pressurized. . Therefore, even if a deposit layer such as an oxide film or an organic substance is attached to the surface of the internal joint or outer peripheral joint having a pointed cross section, the internal joint or outer peripheral joint is pressed and crushed. As a result, the adhering material layer is pushed through, and a new surface of the metal constituting the internal joint portion or the outer peripheral joint portion appears reliably. Therefore, it is possible to securely bond the substrates by forming an internal junction or an outer circumference junction with a pointed cross section on the surface of one substrate, and abutting and pressing the junction of the other substrate. it can.

According to invention of Claim 1,2,13,14 , the outer periphery junction part formed in the at least one board | substrate and the junction part of the other board | substrate are pressurized, and it joins temporarily, and joining of both board | substrates is carried out. A predetermined atmosphere can be enclosed in the space surrounded by the outer peripheral joint between the surfaces. Therefore, in the predetermined atmosphere in the space, it is possible to reliably perform the main bonding between the internal bonding portion and the bonding portion of the other substrate by applying pressure, so that the contour is defined by the internal bonding portion between the bonding surfaces of both substrates. A predetermined atmosphere is enclosed in a space formed by being surrounded by a shape, and this space can be reliably shielded from the external atmosphere.

  In addition, the internal bonding portion and the outer peripheral bonding portion formed on at least one of the substrates and the bonding portion of the other substrate can be brought into close contact with each other by pressurization, and temporary bonding and main bonding can be reliably performed. .

According to the third and fifteenth aspects of the present invention, prior to the temporary bonding, the outer peripheral bonding portion and the inner bonding portion made of metal of at least one of the substrates are surface-activated by an energy wave that is an atomic beam, an ion beam, or plasma. Thus, temporary bonding and main bonding of the substrates can be reliably performed.

According to the fourth aspect of the present invention, since the peripheral portions of both the substrates are made higher than the peripheral portions in the temporary bonding step, the peripheral portions of the substrate body are formed so as to surround all the internal joint portions. Temporary joining for joining the outer peripheral joint portion and the joint portion of the other substrate can be reliably performed, and a predetermined atmosphere is formed in a space formed by the outer peripheral joint portion between the joint surfaces of both substrates. Can be sealed to more reliably block the atmosphere inside and outside the space.

According to the invention described in claims 5 , 6, 7, 16 , 17, and 18 , since the pressurization can be applied over the entire surfaces of both substrates in the main bonding, it is formed inside the outer peripheral bonding portion. All of the internal joint portions can be reliably joined to the joint portion of the other substrate.

According to the eighth aspect of the present invention, by performing temporary bonding in a vacuum, the space formed by being surrounded by the outer peripheral bonding portion can be easily sealed in a vacuum atmosphere.

According to the ninth aspect of the present invention, by performing the temporary joining in the sealed gas, the predetermined sealed gas can be easily sealed in the space surrounded by the outer peripheral joint portion.

According to the invention described in claim 10 , by performing the main joining in the atmosphere, the amount of the enclosed gas used can be reduced and the cost can be reduced.

According to the eleventh and nineteenth aspects of the present invention, it is possible to perform temporary bonding or main bonding by heating the bonding portions made of metal by a thermal diffusion method or by melting the bonding portions.

  In addition, when performing temporary bonding and main bonding in combination with surface activation treatment, residual stress in the bonded portion due to surface roughness and waviness of the substrate can be obtained by annealing at room temperature to 180 ° C. during the bonding. And strain can be removed, and the bonding strength can be improved.

According to the invention described in claim 12 , a MEMS device having a main body portion of a semiconductor device such as a surface acoustic wave device and an RF device, and a mechanical movable portion in a region surrounded by an internal joint portion of at least one substrate. After forming the main body portion of the device or the electrode of the device and performing temporary bonding and main bonding between the substrate and the other substrate, the bonded substrate is diced for each region surrounded by the internal bonding portion. Thus, it is possible to provide a device in which the main body and electrodes of the device are surrounded by the internal joint and are shielded from the external atmosphere.

According to the invention described in claim 20 , a plurality of devices can be simultaneously formed by forming device circuits or the like in a plurality of regions surrounded by the internal bonding portion and performing temporary bonding and main bonding between the substrates. In addition, the device circuit and the like of the device can be sealed in a space surrounded by the internal joint portion and reliably shielded from the external atmosphere.

According to the invention of claim 21 , since gold does not corrode and does not generate gas even when heated, a predetermined atmosphere is formed in the space formed by the joint between the two substrates. As a sealing material that seals the space from the outside atmosphere, a practical joint can be formed.

According to the invention described in claim 22 , since the hardness of the outer peripheral joint is formed lower than the hardness of the inner joint, the outer peripheral joint is more easily deformed than the inner joint, Since the bonding portion of the other substrate is in close contact, temporary bonding can be reliably performed.

According to the invention of claim 23 , since the height from the surface of the substrate body of the outer peripheral joint portion is formed higher than the height from the surface of the substrate body of the inner joint portion, the substrates are temporarily joined together. In this case, since the outer peripheral bonding portion comes into contact with the bonding portion of the other substrate before the inner bonding portion, temporary bonding can be reliably performed.

According to the invention described in claim 24 , an adherent layer such as an oxide film or an organic substance is adhered to the surface of the internal junction portion or the outer peripheral junction portion having a pointed cross section formed on the surface of one of the substrates. However, when the internal joint portion or the outer peripheral joint portion is pressed and crushed, the deposit layer is crushed and the new surface of the metal constituting the internal joint portion or the outer peripheral joint portion appears reliably. Therefore, the internal joint or outer peripheral joint having a pointed cross-sectional shape formed on one substrate surface and the joint formed on the other substrate surface are reliably bonded by being pressurized, The substrates can be reliably bonded to each other.

<First Embodiment>
A first embodiment of the present invention will be described with reference to FIGS.

1. Substrate First, the structure of the substrate bonded in the bonding apparatus of the present invention will be described in detail. 1 is a diagram illustrating an example of a substrate, FIG. 2 is a cross-sectional view taken along line AA in FIG. 1, and FIG. 3 is a diagram illustrating another example of the substrate.

(1) Substrate (a)
An example of the substrate will be described with reference to FIG. As shown in FIG. 1, on the surface of the substrate main body 808a of the device substrate 808, there are an internal bonding portion 831a surrounding a predetermined region and an outer peripheral bonding portion 831b surrounding the internal bonding portion 831a at the peripheral edge of the substrate main body 808a. Protrusions are formed. In a region surrounded by the internal bonding portion 831a, a main body portion 829 of a device such as a semiconductor device such as a surface acoustic wave device or an RF device or a MEMS device having a mechanical movable portion is formed. Here, the predetermined region is a region where an operation part or a vibration part of a circuit is formed.

  Further, the inner joint portion 831a and the outer joint portion 831b are formed to protrude from the substrate body 808a in a thick film shape by gold plating. Further, as shown in FIG. 2, in this example, the height of the outer peripheral joint 831b from the surface of the substrate body 808a is about 3 μm, and the height from the surface of the substrate body 808a is about 1.5 μm. It is comprised so that it may become higher than the height of the internal junction part 831a currently formed in this.

  Further, a gold thin film 832 is formed as a bonding portion on the surface of the substrate main body 807a of the lid substrate 807 by sputtering or flash plating. Instead of the gold thin film 832, the internal bonding portion 831 a and the outer peripheral bonding portion 831 b may be formed similarly to the device substrate 808. In contrast to electroplating, sputtering or flash plating is effective. It can be plated as thin as several μm. A material having a flat surface such as a Si wafer is preferably a thin film because it can be plated while maintaining the flatness without impairing the flatness of the substrate. In this case, the reattachment layer can be thinned by shortening (eliminating) the time of exposure to the atmosphere, and bonding can be performed even at a low pressure of 100 MPa or less. Since the surface is made of gold, re-adhesion becomes dull, so there is no need for high-vacuum bonding, and it can be handled by handling the plasma level surface activation treatment and low vacuum level (about several Pa). . Also, if it is about several minutes, it will not affect the bonding even if it is exposed to the atmosphere. This is a more preferable method suitable for mass production. However, compared to the pressure film plating method, the effect of crushing and creating a new surface is reduced, so the time that can be exposed to the air is shortened, so it is more suitable for the method of bonding at the wafer level all at once than the method of bonding many chips. . Moreover, it can be said that a method in which the inner peripheral part is a thin film and the outer peripheral part is a pressure film as a composite of pressure film plating and a thin film is preferable for achieving each purpose.

  With such a configuration, the gold does not corrode and does not generate gas even when heated. Therefore, as will be described later, the device substrate 808 and the lid substrate 807 are temporarily joined to form both substrates 807, It is practical as a sealing material that encloses a predetermined atmosphere in a space surrounded by an outer periphery joint portion 831b between 808 and formed in a contour, and blocks the space from the external atmosphere.

  Further, since the height of the outer peripheral bonding portion 831b from the surface of the substrate main body 808a is formed higher than the height of the inner bonding portion 831a from the surface of the substrate main body 808a, as described later, the device substrate 808 and the lid When performing temporary bonding with the substrate 807, the outer peripheral bonding portion 831b comes into contact with the gold thin film (bonding portion) 832 of the lid substrate 807 before the internal bonding portion 831a, so that temporary bonding can be reliably performed.

(2) Substrate (b)
Another example of the substrate will be described with reference to FIG. 3 differs greatly from the example of the substrate shown in FIG. 1 in that a plurality of internal joints 831a are formed on the surface of the substrate body 808a of the device substrate 808. FIG. As shown in FIG. 3, on the surface of the substrate body 808a of the device substrate 808, there are a plurality of internal joint portions 831a each surrounding a predetermined area, and an outer periphery that surrounds all of the internal joint portions 831a at the peripheral edge portion of the substrate body 808a. A joint 831b is formed to protrude. In each region surrounded by the internal joint 831a, a main body 829 of a device such as a semiconductor device such as a surface acoustic wave device or an RF device or a MEMS device having a mechanically movable part is formed. Yes.

  Similarly to the example of the substrate shown in FIG. 2, the inner joint 831a and the outer joint 831b are formed to protrude from the substrate body 808a in a thick film by gold plating. Further, the height of the outer peripheral joint 831b from the surface of the substrate body 808a is about 7 μm, and the height from the surface of the substrate body 808a is about 5 μm than the height of the inner joint 831a. It is configured to be high.

  A gold thin film 832 is formed on the surface of the substrate body 807a of the lid substrate 807 by sputtering or flash plating. Instead of the gold thin film 832, the internal bonding portion 831 a and the outer peripheral bonding portion 831 b may be formed similarly to the device substrate 808.

  In addition, after the device substrate 808 and the lid substrate 807 formed as illustrated in FIG. 3 are bonded by a bonding apparatus described later, the bonded device substrate 808 and the lid substrate 807 are surrounded by the internal bonding portion 831. A plurality of devices can be efficiently formed by dicing each time.

(3) Others In the above-described example of the substrate and other examples, the inner bonding portion 831a and the outer peripheral bonding portion 831b are formed to protrude from the surface of the substrate body 808a by applying gold plating in a thick film shape. The joints 831a and 831b may be formed by forming a gold film on the surface of a base material made of metal. Since other configurations are the same as those of the above-described example of the substrate and other examples, description of the configuration is omitted.

  As described above, as the joint portions 831a and 831b configured by forming a gold film on the surface of a metal base material, for example, using copper as a base material and forming a gold film on the surface of the copper base material Thus, the inner joint 831a and the outer joint 831b may be formed. Alternatively, the inner joint 831a and the outer joint 831b may be configured by forming a gold film on the surface of Al using Al as a base material.

  Moreover, although each numerical value mentioned above was mentioned as an example, the height of a junction part is not limited to these numerical values. In addition, it is desirable that the height of the internal joint portion 831a from the surface of the substrate body 808a is higher than the height of the device body portion 829 from the surface of the substrate body 808a. Further, the height of the inner joint 831a and the outer joint 831b from the surface of the substrate body 808a may be substantially the same.

  In addition, although gold has been described as an example of the metal constituting the inner joint 831a and the outer joint 831b, the metal constituting these joints 831a and 831b is not limited to gold, and Al, copper, tin ( The joints 831a and 831b may be formed using a gold-tin alloy). Further, for example, the inner joint 831a is formed of copper (about 140Hv) having a hardness higher than that of gold (about 100Hv), and the outer peripheral joint 831b is formed of gold. You may comprise so that it may become lower than the hardness of the junction part 831a.

The device substrate 808 and the lid substrate 807 are a printed circuit board made of resin, a build-up board on which wiring layers are stacked, a wafer made of Si, SiO ₂ , glass, ceramic, and LT (oxide single crystal), etc. Can be made of various materials.

2. Surface activation / temporary bonding equipment (a)
Next, a surface activation / temporary joining apparatus (corresponding to “surface activation means” and “temporary joining means” of the present invention) that performs surface activation treatment (surface activation step) and temporary joining treatment (temporary joining step) ). FIG. 4 is a view showing a surface activation / temporary bonding apparatus. FIG. 5 is a diagram showing the procedure of the surface activation process and the temporary bonding process. FIG. 6 is a diagram showing an alignment process in the atmosphere using the two-field recognition means in the apparatus of FIG.

  As shown in FIG. 4, in the surface activation / temporary bonding apparatus 1, a decompression chamber is configured by a chamber wall 803 configured to be moved up and down by an actuator (not shown) and a chamber table 810. In this surface activation / bonding apparatus 1, with the lid substrate 807 and the device substrate 808 held vertically opposite to each other, the chamber wall 803 is lowered to close the decompression chamber, and surface activation processing (etching) is performed by Ar plasma in a vacuum. ), The substrates 807 and 808 can be temporarily joined.

  Further, the apparatus 1 is configured to hold one substrate, hold a head unit that performs elevation control and pressurization control by the Z-axis 801, and the other substrate, and can adjust the position of the held substrate. Stage part. Further, the head portion includes a piston-type head 802 and an upper electrode 806, and the stage portion includes an alignment table 820 and a lower electrode 809 configured to be capable of position adjustment (alignment processing). In this embodiment, the lid substrate 807 is held by the upper electrode 806, and the device substrate 808 on which the device body 829 is formed is held by the lower electrode 809. In the present embodiment, both the lid substrate 807 and the device substrate 808 are formed with the internal joint portion 831a and the outer peripheral joint portion 831b, and the two substrates 807 and 808 are joined to each other.

  The Z-axis 801 includes pressure detection means (not shown). A detection signal from the pressure detection means is fed back to a torque control device (not shown) of the Z-axis servomotor, so that the piston-type head 802 is attached to the substrate 807. , 808 can be controlled in a direction substantially perpendicular to the joint surface. Thus, in the present embodiment, the Z-axis 801 functions as the “vertical drive mechanism” and “pressurizing means” of the present invention. Note that only the stage unit side or both the head unit side and the stage unit side may be configured to be capable of pressure control.

Then, while the sliding packing 804 is in sliding contact with the Z-axis 801, the chamber wall 803 that can be moved up and down independently of the Z-axis 801 by the actuator is lowered, and the chamber packing 810 is grounded via the fixed packing 805. Can be cut off from outside air. In this state, the exhaust valve 814 is opened and the vacuum pump 815 is operated to evacuate the chamber through the exhaust port 812, and then the gas switching valve 816 is switched to introduce the Ar gas 817 and the intake valve is switched. By opening 813, Ar gas 817 can be introduced into the chamber as a reaction gas via the suction port 811.

  Further, by switching the gas switching valve 816 to introduce the nitrogen gas 818, the nitrogen gas 818 can be introduced into the chamber as an enclosed gas via the suction port 811. Then, after surface activation processing of the substrates 807 and 808 by Ar plasma, the inside of the chamber is replaced with a predetermined sealed gas atmosphere, and the piston-type head 802 is lowered to temporarily bond both the substrates 807 and 808. Can do. In addition, the upper electrode 806 and the lower electrode 809 are provided with a heater (not shown), and the joint strength between the substrates 807 and 808 can be improved by using heating together when the substrates 807 and 808 are joined.

  As will be described later, after the surface activation treatment, the inside of the chamber is replaced with a predetermined atmosphere (Ar gas 817, nitrogen gas 818, vacuum, air, etc.), and the piston-type head 802 is lowered, whereby both substrates 807 are moved. , 808 can be temporarily joined by enclosing the predetermined atmosphere in a space surrounded by the outer peripheral joint portion 831b. Further, the sliding packing (O-ring) 4 of the chamber wall 803 is brought into sliding contact with the Z-axis 801 and the chamber is hermetically sealed by the O-ring, but the sliding packing (O-ring) is provided on the outer peripheral surface of the piston type head 802. The sliding packing may be brought into sliding contact with the chamber wall 803 to hermetically seal the chamber.

  Next, processing procedures of the surface activation process (surface activation process) and the temporary bonding process (temporary bonding process) in the surface activation / temporary bonding apparatus 1 will be described with reference to FIG. First, as shown in FIG. 5A, the lid substrate 807 is held by the upper electrode 806 and the device substrate 808 is held by the lower electrode 809 with the chamber wall 803 raised. The holding method of the substrates 807 and 808 may be a mechanical chucking method, but an electrostatic chuck method is more preferable.

  Then, as shown in FIG. 5B, the chamber wall 803 is lowered and is grounded to the chamber base 810 via the fixed packing 805. Since the chamber wall 803 is cut off from the atmosphere by the sliding packing 804 being in sliding contact with the Z-axis 801, the exhaust valve 814 is opened while the suction valve 813 is closed, and the vacuum pump 815 is evacuated. The degree of vacuum in the chamber can be increased.

Next, as shown in FIG. 5C, a reactive gas is introduced into the chamber. By adjusting the discharge amount of the discharge valve 814 and the gas intake amount of the suction valve 813 while operating the vacuum pump 815, the chamber can be filled with an arbitrary reaction gas while maintaining a certain degree of vacuum. In this embodiment, Ar gas 817 is filled as a reaction gas in a vacuum degree of about 10 ⁻² Torr, and a voltage is first applied to the lower electrode 809 from an alternating power source as shown in FIG. As a result, Ar plasma is generated, and surface activation processing is performed on the internal bonding portion 831 a and the outer peripheral bonding portion 831 b formed on the device substrate 808. That is, the surface of the inner joint 831a and the outer joint 831b formed on the device substrate 808 is etched with Ar plasma, and the deposit layer made of an oxide film or an organic substance attached to both the joints 831a and 831b is removed. Surface activated (cleaned).

  Subsequently, as shown in FIG. 5E, an Ar plasma is generated in the same manner by applying a voltage to the upper electrode 806 from an alternating power source, and the inner joint 831a and the outer joint 831b formed on the lid substrate 807. The surface activation treatment is performed.

  As described above, it is preferable to perform surface activation treatment on both joint portions of both substrates because the new surface is exposed more reliably and the strength of the joint is increased. Note that the surface activation treatment may be performed only on at least one of the device substrate 808 and the lid substrate 807. For example, in the device substrate 808 provided with a light receiving element, it is not preferable to perform a surface activation process on the device substrate 808 because the light receiving element is easily damaged by plasma treatment. Therefore, the bonding portion is formed of gold, and only the bonding portion formed on the lid substrate 807 is subjected to surface activation treatment, and the device substrate 808 and the lid substrate 807 are pressed to break the bonding portion surface, thereby the bonding portion surface. In the case where the deposited layer such as an oxide film or organic material is thin, the new surface is exposed and bonding can be performed.

  Next, as shown in FIG. 5B, the chamber is further evacuated with the suction valve 813 closed, and the Ar gas is discharged. In addition, by vacuuming while heating both electrodes 806 and 809 to about 100 ° C., Ar ions attached to the surfaces of the substrates 807 and 808 or Ar ions implanted into the substrates 807 and 808 can be discharged.

Thereafter, as shown in FIG. 5C, the inside of the chamber is replaced with a predetermined sealed gas. In addition,
By selecting the Ar gas 817 and the nitrogen gas 818 with the gas switching valve 816 and introducing them into the suction port 811, the two gases of the Ar gas 817 and the nitrogen gas 818 can be switched in one chamber. Further, since the gas switching valve 816 is configured to be able to inhale the atmosphere, the atmosphere can be introduced into the chamber as an enclosed gas. Moreover, after introducing air | atmosphere in a chamber and making the inside of a chamber atmospheric pressure, a chamber can be opened and air-released.

  Therefore, in this embodiment, one gas can be selected from the Ar gas 817, the nitrogen gas 818, the atmospheric gas, and the vacuum as the sealed gas and introduced into the chamber. Note that in the case where the sealed gas is Ar gas 817, the consumption of Ar gas 817 can be suppressed by omitting the process of evacuating the chamber after the surface activation process described above. Further, when the sealed gas is evacuated, after performing the above-described surface activation treatment, the inside of the chamber is evacuated, and then a temporary joining treatment described later may be carried out as it is.

  Subsequently, as shown in FIG. 5 (f), the piston-type head 802 is lowered by the Z-axis 801 while the chamber wall 803 and the Z-axis 801 are in contact with the sliding packing 4 in a vacuum or in an enclosed gas. At this time, after the internal bonding portion 831a and the outer peripheral bonding portion 831b are subjected to surface activation treatment by Ar plasma, the floating matter of the deposit layer removed by etching is reattached to the bonding portions 831a and 831b, or the bonding When the portions 831a and 831b are exposed to the atmosphere, a deposit layer such as an organic substance or an oxide film may be reattached to the joint portions 831a and 831b.

  However, the outer peripheral joint 831b formed on both the substrates 807 and 808 is brought into contact with each other in a vacuum or an enclosed gas, and the adhesion layer reattached to the outer peripheral joint 831b is pushed and pressed to press the outer peripheral joint 831b. The parts 831b are joined to each other, and a temporary joining process is performed in which a predetermined atmosphere is sealed in a space formed by the outer peripheral joining part 831b surrounded by a contour between the joining surfaces.

  The inside of the chamber is shut off from the external atmosphere by a sliding packing 804 between the chamber wall 803 and the Z-axis 801, and the piston type head 802 can be lowered while the inside of the chamber is maintained in a vacuum or an enclosed gas atmosphere. . In addition, the bonding strength can be improved by heating at a temperature of about 180 ° C. with a heater provided in the electrodes 806 and 809 during the temporary bonding process. Finally, as shown in FIG. 5 (g), the atmosphere is supplied into the chamber and the pressure is returned to atmospheric pressure, then the head is raised, and both bonded substrates 807 and 808 are taken out of the chamber to activate the surface. The process and the temporary joining process are finished.

  By the way, when the substrates 807 and 808 are bonded to each other, the lid substrate 807 and the device substrate 808 are adjusted in position (alignment), and then temporarily bonded. As shown in FIG. 6, by inserting the two visual field recognition means 825 between the two substrates 807 and 808, the positions of the inner joint portion 831a and the outer peripheral joint portion 831b formed on the two substrates 807 and 808 can be determined. It can be detected by the recognition means 825.

  The two-field recognition means 825 is inserted between the two substrates 807 and 808, and the images of the inner joint portion 831a and the outer joint portion 831b of the two substrates 807 and 808 positioned above and below are converted into the upper mark recognition means by the prism 826. 827 and the lower mark recognizing means 828 can be refracted and read. The two-field recognition means 825 is a table (not shown) configured to be movable in the XY-axis direction substantially parallel to the bonding surface of both substrates 807 and 808 and the Z-axis direction substantially perpendicular to the surfaces of both substrates 807 and 808. The position of the joints 831a and 831b formed at arbitrary positions on both the substrates 807 and 808 can be read.

  Then, after reading the positions of the joints 831 a and 831 b formed on both the substrates 807 and 808, the alignment adjustment is performed to align the position of the device substrate 808 with the position of the lid substrate 807 using the alignment table 820. Note that, after the first position adjustment is completed, the two-field recognition means 825 is again inserted into both the substrates 807 and 808, and the position adjustment is repeated to improve the position accuracy. In the present embodiment, the joints 831a and 831b formed on both the substrates 807 and 808 are used as alignment marks. However, alignment marks may be separately provided on the surfaces of both the substrates 807 and 808.

  As described above, in the surface activation / temporary bonding apparatus 1, after the surface activation treatment of both the bonding portions 831 a and 831 b by Ar plasma, the suspended matter in the deposit layer removed by etching is reattached to the outer peripheral bonding portion 831 b. Even if it pressurizes, the adhesion layer which reattached can be pushed through, and the outer periphery junction part 831b of both board | substrates 807 and 808 can be joined, and it is enclosed by the outer periphery junction part 831b between the joining surfaces in outline shape. Temporary joining treatment can be performed in which a predetermined atmosphere is sealed in the space formed in this manner.

  Note that by performing the temporary bonding process in a vacuum, a space surrounded by the outer peripheral bonding portion 831b can be easily sealed in a vacuum atmosphere. In addition, by performing the temporary bonding process in a sealed gas such as Ar gas, nitrogen gas, or the atmosphere, these sealed gases can be easily sealed in a space surrounded by the outer peripheral bonding portion 831b.

  Further, if the joint portion is made of gold, the sealed gas is not corroded even if it is not an inert gas, so that the joint gas is not affected. Therefore, gases other than inert ones can be used.

  Further, if the surface activation treatment is performed with Ar plasma, the etching power for removing the adhering layer of the bonding portions 831a and 831b is high and the efficiency is high. However, the surface activation treatment can also be performed by plasma with another reactive gas such as nitrogen or oxygen.

  In addition, at the time of the temporary joining process which joins the outer periphery junction part 831b, the internal junction part 831a may also be partly contacted and joined. Even in such a case, the internal bonding portion 831a is bonded in a predetermined atmosphere. Therefore, after the temporary bonding process, a main bonding process described later is performed, so that the two substrates 807 and 808 are connected. A predetermined atmosphere can be reliably sealed in the space formed by the inner joint portion 831a surrounded by the outline.

3. Main Bonding Device Next, a main bonding device (corresponding to the “main bonding means” of the present invention) that performs the main bonding step will be described. FIG. 7 is a view showing the present joining apparatus, and (a) to (c) show different aspects of the present joining apparatus. Each of the main joining apparatuses 21 to 23 shown in FIG. 7 joins the internal joint portions 831a of the substrates 807 and 808 in the atmosphere after the temporary joining by the surface activation process described above is performed. A main bonding process (main bonding step) for performing the main bonding is performed. Thus, in this embodiment, the “joining apparatus” of the present invention is configured by any of the surface activation / temporary joining apparatus 1 and the main joining apparatuses 21 to 23.

(1) Main joining device (a)
The main joining device 21 will be described with reference to FIG. As shown in FIG. 5A, the main bonding apparatus 21 pressurizes the stage substrate 211 holding the lid substrate 807 and the device substrate 808 on which temporary bonding has been performed, and both the substrates 807 and 808 held on the stage 211. At this time, a pressurizing means 210 that pressurizes while shifting the pressurizing position is provided. Therefore, by pressing the substrates 807 and 808 while shifting the pressurization position by the pressurizing means 210, it is possible to reliably join all the internal joints 831a formed inside the outer peripheral joint 831b.

(2) Main joining device (b)
The main joining apparatus 22 will be described with reference to FIG. As shown in FIG. 4B, the main bonding apparatus 22 includes a stage 221 that holds the lid substrate 807 and the device substrate 808 on which temporary bonding has been performed, and the entire surfaces of both substrates 807 and 808 held on the stage 221. And a high-pressure press means 220 for collectively pressurizing. Therefore, all the internal joints 831a formed inside the outer peripheral joint 831b can be reliably joined by collectively pressing the entire surfaces of the substrates 807 and 808 by the high pressure press means 220.

(3) Main joining device (c)
The main joining apparatus 23 will be described with reference to FIG. As shown in FIG. 5C, the main bonding apparatus 23 includes a pressure roller 230 that presses the cover substrate 807 and the device substrate 808 that have been temporarily bonded together. Therefore, by passing both the substrates 807 and 808 between the pressure rollers 230 and applying pressure, all of the internal joints 831a formed inside the outer peripheral joint 831b can be reliably joined.

  As described above, in the main bonding apparatuses 21 to 23, a predetermined atmosphere is sealed in the space formed by the outer peripheral bonding portion 831b between the bonding surfaces of both the substrates 807 and 808 by the temporary bonding process. In this state, by pressing both substrates 807 and 808 over the entire surface, all the internal joint portions 831a formed in the space can be joined to each other, and the main joining can be performed reliably. Therefore, it is possible to reliably enclose a predetermined atmosphere in a space formed by the inner joint portion 831a surrounded by the contour between the joint surfaces of both the substrates 807 and 808.

  That is, according to the main bonding apparatuses 21 to 23, in the main bonding process, both the substrates 807 and 808 can be pressurized over the entire surface, so that both the substrates 807 and 807 formed inside the outer peripheral bonding portion 831b can be pressed. It is possible to perform the main joining by reliably joining the internal joint portions 831a of 808.

  Further, by performing the main bonding in the atmosphere, the vacuum chamber of the main bonding apparatus becomes unnecessary, and the amount of the enclosed gas used can be reduced and the cost can be reduced.

  In addition, even after the surface activation treatment of both the joints 831a and 831b by Ar plasma, before the temporary joining process is performed, even if the suspended matter of the deposit layer removed by etching is reattached to the internal joint 831a, By pressurizing, the reattached adhered layer can be pushed through to join the internal joints 831a of both substrates 807 and 808, and formed between the joint surfaces surrounded by a contour by the internal joint 831a. It is possible to perform the main bonding in which a predetermined atmosphere is sealed in the space.

  As described above, according to this embodiment, the outer peripheral bonding portion 831b formed on the lid substrate 807 and the device substrate 808 is pressurized and temporarily bonded to each other, so that the outer peripheral bonding is performed between the bonding surfaces of both the substrates 807 and 808. A predetermined atmosphere can be enclosed in the space surrounded by the portion 831b. Therefore, the main bonding between the internal bonding portions 831a of the two substrates 807 and 808 can be reliably performed by pressurizing in a predetermined atmosphere in the space, and therefore, the internal space between the bonding surfaces of the two substrates 807 and 808 is internal. A predetermined atmosphere is enclosed in a space formed by the joint portion 831a so as to be surrounded by a contour, and the space can be reliably shielded from the external atmosphere.

  Further, in the present embodiment, prior to the temporary bonding, the internal bonding portion 831a and the outer peripheral bonding portion 831b made of metal of both the substrates 807 and 808 are subjected to surface activation treatment with an energy wave that is Ar plasma, so that the substrates 807 and 808 are activated. Interim temporary bonding and main bonding can be reliably performed.

  Further, in the present embodiment, the internal bonding portion 831a and the outer peripheral bonding portion 831b formed on the lid substrate 807 and the internal bonding portion 831a and the outer peripheral bonding portion 831b formed on the device substrate 808 are brought into close contact by pressurization. Thus, it is possible to reliably perform temporary bonding and main bonding, respectively.

  In addition, in a region surrounded by the internal bonding portion 831a of the device substrate 808, a main body portion of a semiconductor device such as a surface acoustic wave device or an RF device, a main body portion of a MEMS device having a mechanical movable portion, or an electrode of the device After the temporary bonding and the main bonding of the internal bonding portion 831a and the outer peripheral bonding portion 831b of the device substrate 808 and the inner bonding portion 831a and the outer peripheral bonding portion 831b of the lid substrate 807, both substrates after bonding are formed. By dicing 807 and 808 for each region surrounded by the internal bonding portion 831a, it is possible to provide a plurality of devices in which the main body and electrodes of the device are surrounded by the internal bonding portion 831a and are blocked from the external atmosphere.

  In this embodiment, both the lid substrate 807 and the device substrate 808 are formed with the internal joint 831a and the outer joint 831b, and the two substrates 807 and 808 are joined to each other. Of course, the joint portion 807 may be a thin gold film 829 or the like.

  In this embodiment, after the surface activation treatment of the joints 831a and 831b, the deposit layer is reattached to the joints 831a and 831b on the assumption that the deposit layer is reattached to the joints 831a and 831b. Even so, it has been described in detail together with the joining principle that the joining portions 831a and 831b can be joined by pushing through the adhered layer. However, after the surface activation treatment of the joints 831a and 831b, if the two substrates 807 and 808 are not transported outside (exposed to the atmosphere) from a vacuum atmosphere or an inert gas atmosphere, they adhere to the joints 831a and 831b. The layer may not reattach. In such a case, it goes without saying that the joints 831a and 831b can be joined if they are brought into contact as they are.

Second Embodiment
A second embodiment of the present invention will be described with reference to FIGS. The present embodiment is different from the first embodiment in the configuration of the surface activation / temporary bonding apparatus 10, and the other configurations are the same as those in the first embodiment. Further, the surface activation / temporary bonding apparatus 10 of the present embodiment is greatly different from the main bonding / temporary bonding apparatus 1 of the first embodiment in that both substrates are guided by guiding IR (infrared) light into the chamber. The position adjustment (alignment) of 807 and 808 is performed. Since other configurations and operations are the same as those of the first embodiment, only differences from the first embodiment will be described below, and the other configurations and operations will be denoted by the same reference numerals, and the configurations and operations thereof will be described. Description is omitted.

4). Surface activation / temporary bonding equipment (b)
A surface activation / temporary bonding apparatus 10 (corresponding to “surface activation means” and “temporary bonding means” of the present invention) that performs the surface activation process and the temporary bonding process will be described. FIG. 8 is a view showing a surface activation / temporary bonding apparatus, and is a view showing a state where the positions of both substrates 807 and 808 are being adjusted. Moreover, FIG. 9 is a figure which shows the state in which temporary joining is performed after the position adjustment shown in FIG. 8 is complete | finished.

  As illustrated in FIG. 8, the surface activation / temporary bonding apparatus 10 includes an IR light source 823, a light guide unit 824 having a refraction unit 824 a that guides IR light from the IR light source 823 toward the substrates 807 and 808, and a light guide. IR recognition means 822 for recognizing IR light guided by the unit 824. The chamber wall 803 is provided with a glass window 803a for entering the IR light irradiated by the IR light source 823 into the chamber. Further, transmission holes 806b and 819 are formed in the upper electrode 806 supported by the light guide 824 by the support column 806a and the lower electrode 809 supported by the alignment table 820, respectively, through which IR light can pass. In addition, a glass window 821 is provided at the lower portion of the chamber table so that IR light guided by the light guide 824 can pass therethrough.

  Therefore, after the surface activation process is performed in the same manner as the process described with reference to FIG. 5 and the inside of the chamber is evacuated, or after the inside of the chamber is evacuated and replaced with the sealed gas, before the temporary bonding process is performed. Both substrates 807 and 808 can be aligned. That is, if the IR light is irradiated from the IR light source 823 in a state where the substrates 807 and 808 after the surface activation process are brought close to each other, the IR light that has passed through the glass window 803a is guided by the light guide unit 824 to the IR recognition unit 822. Guided in the direction. The IR light passing through the transmission holes 806b and 819 and the glass window 821 is read by the IR recognizing means 822, so that the internal bonding portion 831a and the outer peripheral bonding portion 831b formed on the bonding surface of the lid substrate 807 and the device substrate. The position can be detected simultaneously.

  The substrates 807 and 808 can be aligned by controlling the movement of the alignment table 820 based on the position information detected by the IR recognition unit 822. The IR recognizing means 822 is a table (not shown) configured to be movable in the XY-axis direction substantially parallel to the surfaces of both substrates 807 and 808 and the Z-axis direction substantially perpendicular to the surfaces of both substrates 807 and 808. It is configured to be movable. In addition, after the alignment table 820 is moved and controlled, the alignment accuracy of both the substrates 807 and 808 is repeated again by the IR recognizing means 822, whereby the positional accuracy can be improved. Further, in order to adjust the depth of focus of the IR recognizing unit 822, the IR recognizing unit 822 can be moved up and down in the Z-axis direction.

  In addition, the inner space of the transmission holes 806b and 819, the glass windows 803a and 821, the support columns 806a, the inner space of the alignment table 820, and the like, which are IR light paths in the surface activation / temporary bonding apparatus 10, are space and glass. However, the present invention is not limited to this, and may be made of a material that transmits IR light. Further, not only the alignment using the transmitted light of the IR light but also the alignment using the reflected light of the IR light by irradiating the IR light from below the both substrates 807 and 808 may be performed.

  Next, with reference to FIG. 9, the temporary bonding process after the alignment process of both the substrates 807 and 808 described with reference to FIG. 8 is described. As shown in FIG. 9, the piston-type head 802 is lowered by the Z-axis 801 while the chamber wall 803 and the Z-axis 801 are in contact with the sliding packing 4 in a vacuum or an enclosed gas. Then, the outer peripheral joint 831b formed on both the substrates 807 and 808 are brought into contact with each other in a vacuum or an enclosed gas, and the adhesion layer reattached to the outer peripheral joint 831b is pressed and pressed to press the outer peripheral joint. The parts 831b are joined to each other, and a temporary joining process is performed in which a predetermined atmosphere is sealed in a space formed by the outer peripheral joining part 831b surrounded by a contour between the joining surfaces.

  At this time, the peripheral edge of the upper electrode 806 is aligned with the support column 806a and the peripheral edge of the lower electrode 809 is aligned with the periphery so that IR light can pass through the transmission holes 806b and 819 formed in the upper electrode 806 and the lower electrode 809, respectively. Supported by a table 820. With such a configuration, when the temporary bonding process shown in FIG. 9 is performed, the peripheral portions of both the substrates 807 and 808 can be made higher than the peripheral portions (the central portions of the substrates 807 and 807). . Therefore, as shown in the portion surrounded by the alternate long and short dash line in FIG. 9, the peripheral portions of the substrates 807 and 808 are strongly pressed, so that the central portion is slightly inflated and bent, The outer peripheral joints 831b are securely in close contact with each other.

  As described above, in this embodiment, since the peripheral portions of both the substrates 807 and 808 are made higher than those other than the peripheral portions in the temporary bonding process, all the internal bonding portions 831a are formed on the peripheral portions of the substrates 807 and 808. Temporary joining that joins the outer peripheral joints 831b formed so as to surround and project can be performed reliably, and the space formed between the joint surfaces of both the substrates 807 and 808 is surrounded by the outer peripheral joint 831b. By enclosing a predetermined atmosphere, it is possible to more reliably block the atmosphere inside and outside the space.

  In the present embodiment, the hardness of the outer peripheral joint portion 831b may be formed lower than the hardness of the inner joint portion 831a. With such a configuration, since the hardness of the outer peripheral joint portion 831b is lower than the hardness of the inner joint portion 831a, the outer peripheral joint portion 831b is more easily deformed than the inner joint portion 831a, and the outer peripheral joint portion. Since 831b adheres closely, temporary joining can be ensured.

  As an example, it is preferable to use a material having a low hardness such as tin or an alloy layer of gold and tin for the base of the outer peripheral joint 831b so that the outer peripheral joint 831b is easily crushed. In this case, the applied pressure could be reduced from 300 MPa to 100 MPa as an example.

  In order to form the hardness of the outer joint 831b lower than the hardness of the inner joint 831a, for example, the outer joint 831b is formed of gold, and the inner joint 831a is formed of copper having a higher hardness than gold. do it. Alternatively, both the joints 831a and 831b can be made of gold, and only the outer joint 831b can be annealed and softened to have a hardness of about 60 Hv.

  Further, in order to perform better bonding, it is preferable to make a difference in the applied pressure between the outer peripheral joint portion 831b and the inner joint portion 831a so that the outer peripheral joint portion 831b has a higher applied pressure than the inner joint portion 831a.

  By the way, in the case of a configuration in which the IR light is guided into the chamber and the alignment processing between the substrates 807 and 808 is performed as in the surface activation / temporary bonding apparatus 10, in order to ensure the optical path of the IR light in the chamber. As shown in FIG. 8, it may be necessary to provide a space in the central portion by supporting the peripheral portions of the upper electrode 807 and the lower electrode 809. With such a configuration, when the substrates 807 and 808 are overlapped and pressed due to the structure of the apparatus, a stronger pressing force is easily applied to the peripheral portions of the substrates 807 and 808 than the peripheral portions.

  However, by bonding the lid substrate 807 and the device substrate 808 corresponding to the “substrate” of the present invention, first, the outer peripheral bonding portion 831b formed on the peripheral edge portion of both the substrates 807 and 807 is brought into close contact with each other and temporarily bonded. After performing the processing, the main bonding apparatus performs the main bonding between the internal bonding portions 831a, so that the inner bonding portions 831a are surrounded by the inner bonding portions 831a in a contour shape. By enclosing a predetermined atmosphere in the space, the internal atmosphere and the external atmosphere can be reliably shut off.

  Moreover, even if it is the structure which aligns by the 2 visual field recognition means 825 as shown in FIG. 6, by supporting the peripheral part of a stage part or a head part, a big force is applied to the peripheral part of both board | substrates rather than a stage center part. In this way, the outer peripheral joint 831b may be easily joined temporarily.

<Third Embodiment>
A third embodiment of the present invention will be described with reference to FIG. The present embodiment is different from the first and second embodiments in that the surface activation / temporary bonding apparatus 11 and the main bonding apparatus 22 are housed in the chamber 30 and the bonding apparatus 3 is configured. Other configurations are the same as those in the first embodiment. Hereinafter, only differences from the first and second embodiments will be described, and other configurations and operations will be denoted by the same reference numerals, and descriptions of the configurations and operations will be omitted.

5. Joining device (a)
The joining device 3 will be described. FIG. 10 is a view showing a joining apparatus. As shown in FIG. 10, the bonding apparatus 3 includes a surface activation / temporary bonding apparatus 11, a main bonding apparatus 22, a chamber 30 in which the surface activation / temporary bonding chamber 11 and the main bonding apparatus 22 are housed. It has. Further, the surface activation / temporary bonding apparatus 11 is disposed in the surface activation / temporary bonding chamber of the chamber 30, and the main bonding apparatus 22 is disposed in the main bonding chamber.

  An airtight shutter 31 is provided at the entrance of the surface activation / temporary bonding chamber. By closing the airtight shutter 31, the surface activation / temporary bonding chamber can be airtight. Further, a transport mechanism 33 is provided between the surface activation / temporary bonding chamber 11 and the main bonding chamber in the chamber 30 so that the substrates 807 and 808 can be transported from the surface activation / temporary bonding apparatus 11 to the main bonding apparatus 22. It is arranged. As the transfer device 33, various well-known transfer devices 33 can be adopted, and the configuration and operation thereof are well known, and therefore the description of the configuration and operation is omitted. Also, the description of the configuration and operation of the transfer device described in the following embodiments will be omitted.

  Further, the main bonding apparatus disposed in the main bonding chamber is not limited to the main bonding apparatus 22, and the various main bonding apparatuses 21 to 23 described above can be disposed. As a method of performing the main bonding process by a method other than the main bonding process by these main bonding apparatuses 21 to 23, by introducing a predetermined gas into the main bonding chamber to be an ultrahigh pressure, both substrates 807, The main bonding process can be performed by pressurizing 808. Further, the gas supply means and the gas discharge means (not shown) are configured so that the inside of the chamber 30 can be set to a predetermined gas atmosphere at an arbitrary pressure, or the inside of the chamber 30 can be set to a vacuum atmosphere. Yes. If it is set as the above structures, there can exist the same effect as above-mentioned 1st and 2nd embodiment.

<Fourth embodiment>
A fourth embodiment of the present invention will be described with reference to FIG. The present embodiment is different from the third embodiment in that the temporary bonding process and the main bonding process are performed by heating both the substrates 807 and 808. Only the temporary bonding apparatus 12 is accommodated in the chamber 40. It is a point that has been. Other configurations are the same as those of the third embodiment. Hereinafter, only differences from the first to third embodiments will be described, and other configurations and operations will be denoted by the same reference numerals, and descriptions of the configurations and operations will be omitted.

6). Bonding device (b)
The joining device 4 will be described. FIG. 11 is a view showing a joining apparatus. As shown in FIG. 11, the bonding apparatus 4 includes a temporary bonding apparatus 12 housed in a chamber 40 and a main bonding apparatus 22. In addition, an airtight shutter 41 is provided at the entrance of the chamber 40. By closing the airtight shutter 41, the chamber 40 can be hermetically sealed and a temporary bonding process can be performed in a predetermined atmosphere.

  A transport mechanism 43 is disposed between the temporary bonding apparatus 12 and the main bonding apparatus 22 in the chamber 40 so that the substrates 807 and 808 can be transferred from the temporary bonding apparatus 12 to the main bonding apparatus 22. With such a configuration, in the temporary joining process and the main joining process, a heater (not shown) incorporated in the upper electrode 806, the lower electrode 809, the piston head 220, and the stage 221 (in the “heating means” of the present invention). The two substrates 807 and 808 can be heated by equivalent), and the outer peripheral bonding portion 831b and the inner bonding portion 831a can be heat diffusion bonded.

  In addition, it is not restricted to this joining apparatus 22, The above-mentioned various this joining apparatuses 21-23 can be employ | adopted. Moreover, you may perform a heat | fever diffusion bonding using the above-mentioned surface activation process together. If it is set as the above structures, there can exist an effect similar to the above-mentioned 1st thru | or 3rd embodiment.

  In addition, when performing the temporary bonding process and the main bonding process together with the surface activation process, the bonding portion 831a due to the surface roughness and waviness of the substrate is performed by performing annealing at a low temperature of room temperature to 180 ° C. during the bonding. , 831b can be removed and the bonding strength can be improved.

<Fifth Embodiment>
A fifth embodiment of the present invention will be described with reference to FIGS. The present embodiment is different from the above-described embodiment in that an internal bonding portion 831c and an outer peripheral bonding portion 831d are formed only on the surface of the substrate body 808a of one substrate 808, and these internal bonding portions 831c. In addition, the outer joint 831d has a pointed cross section. Further, the surface activation treatment by energy waves (plasma) is performed only on the gold thin film 832 as a bonding portion formed on the surface of the substrate body 807a of the other substrate 807. Other configurations are the same as those in the first to third embodiments. Hereinafter, only differences from the first to third embodiments will be described, and other configurations and operations will be denoted by the same reference numerals, and descriptions of the configurations and operations will be omitted. 12 is a diagram showing another example of the substrate, and FIG. 13 is a diagram showing the bonding principle of the substrates shown in FIG.

(4) Substrate (c)
Another example of the substrate will be described with reference to FIG. 12A is a perspective view of the substrate, and FIG. 12B is a cross-sectional view taken along line BB in FIG. As shown in FIG. 12, on the surface of the substrate main body 808a of the device substrate 808, there are an internal bonding portion 831c surrounding a predetermined region and an outer peripheral bonding portion 831d surrounding the internal bonding portion 831c at the peripheral edge of the substrate main body 808a. The cross section is formed to protrude in a pointed shape. In a region surrounded by the internal bonding portion 831c, a main body portion 829 of a device such as a semiconductor device such as a surface acoustic wave device or an RF device or a MEMS device having a mechanical movable portion is formed. Here, the predetermined region is a region where an operation part or a vibration part of a circuit is formed.

  Further, the inner joint 831c and the outer joint 831d are formed to protrude from the substrate body 808a in a thick film shape by gold plating. In addition, as shown in FIG. 12A, in this example, the height of the outer peripheral joint 831d from the surface of the substrate body 808a is about 7 μm, and the height from the surface of the substrate body 808a is about It is configured to be higher than the height of the internal joint portion 831c formed to 5 μm.

  Further, a gold thin film 832 is formed as a bonding portion on the surface of the substrate main body 807a of the lid substrate 807 by sputtering or flash plating. Instead of the gold thin film 832, the internal bonding portion 831 a and the outer peripheral bonding portion 831 b may be formed similarly to the device substrate 808.

(5) Substrate (d)
Further, the device substrate 808 described in the above section “(4) Substrate (c)” has the device substrate 808 similar to that in FIG. 3 by the internal joint portion 831c and the outer peripheral joint portion 831d having a sharp cross section. It may be formed. That is, a plurality of internal bonding portions 831c may be formed to protrude from the surface of the substrate body 808a of the device substrate 808, and an outer peripheral bonding portion 831d surrounding all of the internal bonding portions 831c may be formed to protrude from the peripheral portion of the substrate body 808a. . In each region surrounded by the internal joint 831a, a main body 829 of a device such as a semiconductor device such as a surface acoustic wave device or an RF device or a MEMS device having a mechanical movable part is formed. Yes.

  Other configurations are the same as the configurations described in the “(1) Substrate (a)”, “(2) Substrate (b)”, and “(3) Other” sections of the first embodiment. The detailed description about the structure is abbreviate | omitted by an equivalent code | symbol. In this embodiment, the internal bonding portion 831c and the outer peripheral bonding portion 831d are formed on the device substrate 808, and the gold thin film 832 is formed on the lid substrate 807. However, the inner bonding portion 831c and the outer peripheral bonding portion 831d are formed on the lid substrate 807. The gold thin film 832 may be formed on the device substrate 808 so as to avoid the device main body 829 on the device substrate 808.

  Next, the principle of substrate bonding in this embodiment will be described with reference to FIG. FIG. 13 is a view showing the bonding principle of the substrates shown in FIG. Usually, an adhesion layer such as an oxide film or an organic substance is formed on the surfaces of the bonding portions 831a, 831b, and 832 formed on the surfaces of the device substrate 808 and the lid substrate 807, so that a solid phase is formed at a low temperature of 180 ° C. or lower. Even if the joining portions 831a, 831b, and 832 are brought into contact with each other as they are, the joining portions 831a, 831b, and 832 cannot be joined. Therefore, as described in the first to third embodiments, the adhering layer attached to the surfaces of the joints 831a, 831b, and 832 is removed by energy waves such as plasma, and the joints 831a, 831b, and 832 are removed. The joints 831a, 831b, and 832 can be brought into contact with each other in a state where the new surface is exposed and the surface is activated.

  Further, as described in the fourth embodiment, by heating the joints 831a, 831b, and 832, at least the surfaces of the joints 831a, 831b, and 832 are melted, so that the joints 831a, 831b, and 832 are melted. Joining can be performed. However, in the present embodiment, as shown in FIG. 13A, the outer peripheral joint portion 831d (inner joint portion 831c) formed on the device substrate has a pointed cross section. Therefore, as shown in FIG. 4B, the outer peripheral joint portion 831d (internal joint portion 831c) of the device substrate 808 and the gold thin film 832 of the lid substrate 807 are brought into contact with each other and pressed. The outer peripheral joint portion 831d (inner joint portion 831c) is crushed, and the deposit layer made of an oxide film, organic matter, etc. attached to the surface of the outer peripheral joint portion 831d (inner joint portion 831c) is crushed and the new surface is formed. Exposed.

  On the other hand, when the outer peripheral joint 831d (inner joint 831c) is crushed by the pressurization, “slip” occurs between the outer joint 831d (inner joint 831c) and the gold thin film 832. Also, the deposit layer made of an oxide film or an organic substance adhered to the surface of the gold thin film 832 is also broken. That is, the outer peripheral joint portion 831d (inner joint portion 831c) having a pointed cross section of the device substrate 808 is pressed and crushed, whereby an oxide film, an organic substance, or the like on the outer peripheral joint portion 831d (inner joint portion 831c) surface. Since the deposit layer is pushed through and the new surface is exposed, and as described above, the deposit layer of the gold thin film 832 is also pushed through and the new surface is exposed, so that the outer joint 831d (inner joint 831c) and the gold are exposed. The thin film 832 is joined by atomic force as shown in FIG.

  Note that the surface of the gold thin film 832 as a bonding portion formed on the lid substrate 807 is subjected to a surface activation process using plasma (energy wave), thereby removing a deposit layer such as an oxide film or an organic substance on the surface of the gold thin film 832. Thus, the new surface of the gold thin film 832 can be exposed, and the inner thin film 832 and the inner joint 831c and the outer peripheral joint 831d can be more reliably joined. In addition, since the gold thin film 832 is difficult to oxidize, it is difficult to form an oxide film due to reoxidation. Even if an oxide film is formed, its thickness is small within a certain time after the surface activation treatment, When the joint 831c and the outer joint 831d are brought into contact with the gold thin film 832 and pressed, it is easily pushed and re-exposed, and the inner joint 831c and the outer joint 831d and the gold thin film 832 are joined. .

  As described above, in this embodiment, since the internal joint portion 831c and the outer peripheral joint portion 831d having a pointed cross section are formed on the surface of the substrate body 808a of the device substrate 808, the internal joint portion 831c and the outer peripheral joint portion are pressurized to be applied. By crushing the portion 831d, it is possible to expose the new surface by smashing the oxide film or the organic matter layer on the surfaces of the joint portions 831c and 831d. In addition, at the contact portion (bonding interface) between the internal bonding portion 831c and the outer peripheral bonding portion 831d and the gold thin film 832, the inner bonding portion 831c and the outer peripheral bonding portion 831d are crushed to increase the area of the contact portion. In this case, a large “slip” occurs between the joints 831c and 831d and the gold thin film 832 to expose new surfaces at the joints 831c and 831d, and also break down the deposit layer on the surface of the gold thin film 832 The new surface can be exposed at 832. Therefore, the internal bonding portion 831c and the outer peripheral bonding portion 831d can be bonded to the gold thin film 832 by the atomic force of the exposed new surface without performing the surface activation treatment with an energy wave such as plasma.

  Note that the surface of the gold thin film 832 as a bonding portion formed on the lid substrate 807 is subjected to a surface activation process using plasma (energy wave), thereby removing a deposit layer such as an oxide film or an organic substance on the surface of the gold thin film 832. Thus, the new surface of the gold thin film 832 can be exposed, and the substrates 807 and 808 can be bonded more reliably. Even in this case, since the surface activation process by energy waves such as plasma before bonding to the internal bonding portion 831c and the outer peripheral bonding portion 831d can be omitted, the process can be simplified.

  In addition, the inventor crushes the inner joint 831c and the outer joint 831d within a range in which the height from the surface of the substrate body 808a to the tip of the inner joint 831c and the outer joint 831d is 20 to 90%. For example, it has been experimentally found that a bonding surface such as an oxide film or an organic substance on the surfaces of both joints 831c and 831d can be reliably removed to expose a new surface, and a highly reliable joint is possible. . With reference to FIG. 14, the relationship between the height from the substrate surface to the tip of the outer peripheral bonding portion 831 d and the bonding strength will be described by taking the outer peripheral bonding portion 831 d as an example.

  FIG. 14 is a diagram showing the relationship between the height of the outer peripheral joint 831d and the bonding strength when the outer peripheral joint 831d is Au, Al, or Cu. In the figure, the height of the outer peripheral joint 831d is 0% when it is completely crushed and 100% when it is not crushed at all. In the same figure, when the bonding strength for good bonding is 150 g or more per outer peripheral bonding portion and the bonding strength per outer peripheral bonding portion is 150 g or more and the bonding strength is sufficiently good, It can be seen that the height of the outer peripheral joint portion 831d after being pressed and crushed may be about 20 to 90% before being crushed from the substrate surface to the tip of the outer peripheral joint portion 831d.

  Further, in FIG. 14, when the height of the outer peripheral joint portion 831d is 0 to 20% of the height from the substrate surface to the tip of the outer peripheral joint portion 831d, the outer peripheral joint portion 831d is largely crushed so that the joint is sufficiently bonded. However, it is considered that there is a possibility that the device substrate 808 and the lid substrate 807 will not be bonded, such as excessive damage, and excessive damage to the device substrate 808 and the lid substrate 807. Further, when the height of the outer peripheral joint portion 831d is 90 to 100% of the height from the joint surface to the tip of the outer peripheral joint portion 831d, there is a possibility that the outer peripheral joint portion 831d is not crushed and thus may not be joined. it is conceivable that. In consideration of the above points, the height of the outer peripheral joint 831d for good bonding is preferably 20 to 90% of the height from the substrate surface to the tip of the outer peripheral joint 831d.

  Therefore, it is added to the object to be bonded such as the device substrate 808 and the lid substrate 807 so that the height from the bonding surface of the outer peripheral bonding portion 831d is in the range of 20 to 90% of the height from the bonding surface before pressing. It is good to press. The same applies to the internal bonding portion 831c, and it is preferable to pressurize the internal bonding portion 831c and the outer peripheral bonding portion 831d so as to be 20 to 90%.

  Therefore, during pressurization, the height of the internal bonding portion 831c and the outer peripheral bonding portion 831d from the other substrate 807 is monitored by monitoring the height of the head holding the substrate by head height detection means (not shown). May be detected, and the applied pressure may be adjusted so that the inner joint 831c and the outer joint 831d have a height of 20 to 90%.

  In addition, the present inventor has determined that the pressure applied to the internal bonding portion 831c and the outer peripheral bonding portion 831d formed on one substrate 808 is one internal bonding regardless of conditions such as the type of metal and the speed of pressurization. It has been experimentally found that the internal joint 831c or the outer joint 831d is crushed to a height in the range of 20 to 90% when the portion 831c or the outer joint 831d is in the range of 100 to 700 MPa. Accordingly, a pressing force in the range of 100 to 700 MPa is applied to the substrate such as the device substrate 808 and the cover substrate 807 per one internal bonding portion 831c or the outer peripheral bonding portion 831d, and the height of the inner bonding portion 831c or the outer peripheral bonding portion 831d. Control may be performed so that the height becomes 20 to 90%.

  In addition, as in the present embodiment, by forming the internal joint 831a and the outer joint 831b so that the cross section has a pointed shape, the following unique effects can be achieved. That is, when the device substrate 808 includes a CMOS image sensor that is a light receiving element, if the surface activation processing of the device substrate 808 is performed before the substrates 807 and 808 are joined, the device substrate 808 is unnecessary due to irradiation of energy waves such as plasma. May cause damage to the CMOS image sensor.

  However, according to the present embodiment, even when a light receiving element such as a CMOS image sensor that is easily damaged by energy waves such as plasma is formed on the device substrate 808, the device substrate 808 including the light receiving element has a pointed cross section. Since the inner bonding portion 831c and the outer peripheral bonding portion 831d are formed, the device substrate 808 and the lid substrate 807 can be bonded without performing the surface activation process of the device substrate 808. Therefore, the device substrate 808 and the lid substrate 807 can be bonded without damaging the device substrate 808 including the light receiving element due to energy waves such as plasma. The light receiving element is not limited to a CMOS image sensor, and a similar effect can be obtained as long as it is a light receiving element such as a CCD, a sensing element, or any other device that is easily damaged by energy waves such as plasma.

<Others>
The present invention is not limited to the above-described embodiments, and various modifications other than those described above can be made without departing from the spirit of the present invention. For example, an optimum one of the above-described various bonding apparatuses can be combined according to the types of substrates 807 and 808 to be bonded and the types of devices formed on the substrate. Hereinafter, a modification of the bonding apparatus will be described with reference to FIG. FIG. 15 is a view showing a modification of the joining apparatus.

7. Joining device (c)
The joining device 5 will be described. As shown in FIG. 15A, the bonding apparatus 5 includes a surface activation chamber in which a surface activation apparatus is disposed, a temporary bonding chamber in which a temporary bonding apparatus is disposed, and a main bonding apparatus. A chamber 50 having a main joining chamber is provided. In the chamber 50, a transport mechanism 53 for transporting the substrates 807 and 808 between the chambers is provided. In addition, an airtight shutter (not shown) that can seal each space is disposed at the entrance of each chamber. In this way, all the processes are performed in the same chamber 50. Even with this configuration, the same effects as those of the first to fourth embodiments described above can be obtained.

8). Bonding device (d)
The joining device 6 will be described. As shown in FIG. 15B, the bonding apparatus 5 includes a surface activation device, a temporary bonding device, and a main bonding device. A transport mechanism 63 is disposed in the atmosphere so that the substrates 807 and 808 can be transported between the devices. Even with this configuration, the same effects as those of the first to fourth embodiments described above can be obtained.

  Further, the inner joint portion and the outer peripheral joint portion may have a pointed cross-sectional shape, a shape that does not have a pointed cross-sectional shape, or a combination of these. Hereinafter, modified examples of the substrate will be described with reference to FIGS. 16 and 17. 16 and 17 are diagrams showing a modification of the substrate.

(6) Substrate (e)
The substrate (e) will be described. As shown in FIG. 16, the outer peripheral joint 831f of the substrate (e) has a pointed cross-sectional shape, and the others are the same as the substrate (a) shown in the first embodiment. By setting it as such a structure, the outer periphery junction part 831f of a board | substrate (e) becomes a structure which is easy to be crushed by pressurization. Further, even when the outer peripheral joint portion 831f and the inner joint portion 831e are the same metal, the outer peripheral joint portion 831f having a pointed cross section is more likely to be crushed. Therefore, the temporary joining of the outer peripheral joint portion 831f can be easily performed.

(7) Substrate (f)
The substrate (f) will be described. As shown in FIG. 17, the internal joint portion 831g of the substrate (f) has a pointed cross section, and the rest is the same as the substrate (a) shown in the first embodiment. By adopting such a configuration, the internal joint portion 831g of the substrate (f) is easily crushed, and after the temporary joint of the outer peripheral joint portion 831h is performed, the internal joint portion 831g is easily crushed by the main joining devices 21 to 23. Thus, the main joining can be performed reliably.

  In addition, when making an outer periphery joining part high, if an outer periphery joining part is sharpened as shown in FIG. 16, and a front-end | tip is made easy to be crushed, an outer periphery joining part can be joined, without applying big pressurization force. Therefore, it is preferable.

It is a figure which shows an example of a board | substrate. It is AA arrow sectional drawing of FIG. It is a figure which shows the other example of a board | substrate. It is a figure which shows the surface activation and provisional joining apparatus of the joining apparatus which is 1st Embodiment of this invention. It is a figure which shows the procedure of a surface activation process and a temporary joining process. It is a figure which shows the alignment process in air | atmosphere using 2 visual field recognition means in the apparatus of FIG. It is a figure which shows the main joining apparatus of the joining apparatus which is 1st Embodiment of this invention. It is a figure which shows the surface activation and provisional joining apparatus of the joining apparatus which is 2nd Embodiment of this invention. It is a figure which shows the state in which temporary joining is performed in the apparatus of FIG. It is a figure which shows 3rd Embodiment of the joining apparatus of this invention. It is a figure which shows 4th Embodiment of the joining apparatus of this invention. It is a figure which shows the other example of a board | substrate. It is a figure which shows the joining principle of the board | substrate shown in FIG. It is a figure which shows the relationship between the height of an outer periphery junction part, and joining strength. It is a figure which shows the modification of the joining apparatus of this invention. It is a figure which shows the modification of the board | substrate of this invention. It is a figure which shows the modification of the board | substrate of this invention.

Explanation of symbols

1, 10, 11 ... Surface activation / temporary bonding device (surface activation means, temporary bonding means)
12 ... Temporary joining device (temporary joining means)
21, 22, 23 ... main joining device (main joining means)
210 ... Pressure means 220 ... High pressure press means 230 ... Pressure roller 801 ... Z axis (vertical drive mechanism, pressure means)
807 ... Lid substrate (substrate)
807a, 808a ... Substrate body 808 ... Device substrate (substrate)
831a, 831c, 831e, 831g ... Internal joint 831b, 831d, 831f, 831h ... Peripheral joint

Claims (24)

In a bonding method for bonding substrates having a bonding portion made of metal formed on the surface of a substrate body,
Projecting said junction board hand, the said at least one internal junction formed projecting to surround the predetermined area of the surface of the substrate main body, surrounds the inner joint all the peripheral portion of the substrate body Having an outer peripheral joint formed,
The joint of the other substrate has a metal film formed on the surface of the substrate body,
And the metal film of the other board and the outer peripheral joint portion of said one substrate pressurized joined by pressurizing means, surrounded by the contour shape by the outer peripheral joint between the joint surfaces of the two substrates A temporary bonding step of enclosing a predetermined atmosphere in the space to be formed;
Joining method characterized by after said provisional bonding step, and a main bonding step of pressurizing joined by said pressurizing means and said metal film of the other substrate and the internal junction of the one substrate . In a bonding method for bonding substrates having a bonding portion made of metal formed on the surface of a substrate body,
Each of the joints of the two substrates has at least one internal joint projecting around a predetermined area on the surface of the substrate body, and projecting around the entire inner joint at the peripheral edge of the substrate body. An outer peripheral joint portion,
The outer peripheral joint portion of the one substrate and the outer peripheral joint portion of the other substrate are joined by pressurizing by a pressurizing means, and the outer peripheral joint portion is surrounded by a contour between the joint surfaces of the two substrates. A temporary bonding step of enclosing a predetermined atmosphere in the space formed by,
A main bonding step of bonding the internal bonding portion of the one substrate and the internal bonding portion of the other substrate by pressing with the pressing means after the temporary bonding step;
Junction how to comprising: a. Claim, characterized by further comprising the prior provisional bonding step, an atomic beam or an ion beam or a surface activation step of surface activating the joint portion of one of the substrate even without least an energy wave is a plasma The joining method according to 1 or 2 . Wherein a peripheral portion of the two substrates in the temporary bonding step, the bonding method according to any one of claims 1 to 3, characterized in that higher than other peripheral edge. The pressurization is performed while shifting the pressurization positions on both the substrates to be pressed by the pressurizing unit when the both pressurizing units are pressed by the pressurizing unit in the main bonding step. 5. The joining method according to any one of 1 to 4. Wherein this bonding step, the bonding method according to any one of claims 1 to 4, characterized in that by applying collective pressure over the entire surface of the two substrates by pressure pressing means as the pressing means. Wherein this bonding step, the bonding method according to any one of claims 1 to 4 wherein between the pressure roller as the pressing means is passed through the two substrates and performing by pressurizing. The bonding method according to any one of claims 1 to 7, characterized in that sealing in a vacuum atmosphere the space by executing the temporary bonding step in a vacuum. The joining method according to any one of claims 1 to 7 , wherein the sealed gas is sealed in the space by performing the temporary bonding step in the sealed gas. The bonding method according to any one of claims 1 to 9 of this bonding process and executes in the atmosphere. Wherein at the time of joining in the temporary bonding step and / or the main bonding step, the bonding method according to any one of claims 1 to 10, characterized in that heating the two substrates. A device formed by the bonding method according to any one of claims 1 to 11, the device characterized by comprising the semiconductor device or MEMS device. In a bonding apparatus for bonding substrates having a bonding portion made of metal formed on the surface of a substrate body,
As the bonding portion of any one of the substrates, at least one internal bonding portion is formed so as to protrude from a predetermined region on the surface of the substrate body, and all the internal bonding portions are surrounded by a peripheral portion of the substrate body. Protruding the outer periphery joint,
As the joint portion of the other substrate, a metal film is formed on the surface of the substrate body,
A head for holding any one of the substrates;
A stage for holding the other substrate;
Wherein at least one of the head or the stage and a substantially perpendicular capable pressurization control vertical drive mechanism and the joint surface of the substrate,
In the space formed by pressurizing and bonding the outer peripheral joint portion of one of the substrates and the metal film of the other substrate, and surrounded by the outer peripheral joint portion between the joint surfaces of the two substrates. Temporary joining means for enclosing a predetermined atmosphere and temporarily joining;
Wherein provided in the temporary joining means separately from, the after temporary bonding, one of the substrate of the inner joint part and the other side of the metal film and the pressurizing joined to the joining means for the bonding of the substrate A joining apparatus comprising: In a bonding apparatus for bonding substrates having a bonding portion made of metal formed on the surface of a substrate body,
As the joint portions of the two substrates, at least one internal joint portion is formed so as to protrude from a predetermined region on the surface of the substrate body, and the peripheral joint portion surrounds the inner joint portion at the peripheral edge portion of the substrate body. Projecting part,
A head for holding any one of the substrates;
A stage for holding the other substrate;
A vertical drive mechanism capable of controlling the pressure of at least one of the head or the stage in a direction substantially perpendicular to the bonding surface of the substrate;
The outer peripheral joint portion of one of the substrates and the outer peripheral joint portion of the other substrate are pressed and joined, and the outer peripheral joint portion is surrounded by a contour between the joint surfaces of the two substrates. Temporary joining means for enclosing a predetermined atmosphere in the space and temporarily joining;
Main bonding means provided separately from the temporary bonding means, and after the temporary bonding, pressurizing and bonding the internal bonding portion of one of the substrates and the internal bonding portion of the other of the substrates. When
Junction device you comprising: a. Prior to the temporary joining by the temporary joining means,
Bonding apparatus according to claim 13 or 14, characterized in that it further comprises a surface activation means for surface activation of the joint portion of one of the substrate even without least an energy wave is an atom beam or an ion beam or plasma . The main joining unit includes a pressurizing unit that pressurizes the two substrates while shifting the pressurization position on the two substrates when the two substrates are pressurized.
The joining apparatus according to claim 13, wherein the main joining is performed by the pressurizing unit. The main bonding means, e Bei high pressure pressing means for pressurizing batch pressure over the entire surface of the two substrates as pressurizing means,
The joining apparatus according to claim 13, wherein the main joining is performed by the high-pressure press unit. The main bonding means, e Bei pressure roller for pressing by passing the two substrates as pressurizing means,
The joining apparatus according to claim 13, wherein the main joining is performed by the pressure roller. A heating means for heating both the substrates;
Wherein at the time of joining in the temporary bonding means and / or said main bonding means bonding apparatus according to any one of claims 13 to 18, characterized in that heating the two substrates. It is a board | substrate joined by the joining method in any one of Claim 1 thru | or 11 , Comprising:
The joint is
A plurality of the internal joints formed so as to surround each predetermined region of the surface of the substrate body;
A substrate comprising: a peripheral edge portion of the substrate body; and the outer peripheral joint portion formed so as to protrude so as to surround all of the plurality of internal joint portions. 21. The substrate according to claim 20 , wherein the bonding portion is made of gold, or a gold film is formed on a surface of the bonding portion. The substrate according to claim 20 or 21 , wherein the hardness of the outer peripheral joint portion is lower than the hardness of the inner joint portion. Height from the surface of the substrate main body of the outer peripheral joint, the substrate according to any one of claims 20 to 22, characterized in that it is higher than the height from the surface of the inner joint portion . The substrate according to any one of claims 20 to 23 , wherein a cross section of the internal joint portion or the outer peripheral joint portion is formed in a pointed shape.

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