JP4969211B2 - Reforming method, reforming apparatus and joining method, joining apparatus - Google Patents

Description

  The present invention relates to a method for modifying a substrate (wafer) in a method for producing an electronic device package such as an acceleration sensor, a pressure sensor, and a SAW (Surface Acoustic Wave) filter having an electronic device in a sealed internal space. The present invention relates to an apparatus, a bonding method, and a bonding apparatus.

  Conventionally, as a technique for protecting various electronic elements such as semiconductor elements, surface acoustic wave elements, and other elements from the effects of moisture, oxygen, etc. existing in the atmosphere, the electronic elements are housed inside the container, and the inside of the container is further sealed. A technique for sealing an electronic element is known.

  In an electronic device in which such an electronic element is arranged and sealed in an internal space, various techniques have been proposed to improve the air tightness (sealing property) inside the container and more reliably prevent entry of moisture and the like. ing. For example, an opening of a ceramic substrate having a cavity portion (concave portion) on which an electronic element is mounted on the bottom surface is covered with a metal lid, and the ceramic substrate and the metal lid are joined and sealed using solder, glass powder, or the like. To be done.

  On the other hand, a technique of sealing an electronic element by sealing a gap between the electronic element mounted by flip chip bonding and the substrate is also used. For example, in Patent Document 1, in the manufacture of a surface acoustic wave device, a package substrate to which a surface acoustic wave chip is flip-chip connected is sealed with a low melting point glass and then sealed with a resin. A technique for obtaining high airtightness compared to the above is disclosed.

  By the way, when it seals with low melting glass as disclosed by patent document 1, or when the member which comprises a container is joined with solder or glass powder, while being able to obtain high airtightness, it is high temperature Therefore, heat treatment for melting low melting glass or solder is required, and it is not suitable for sealing an electronic element having low heat resistance. In particular, electronic devices such as compound semiconductors have low heat resistance, and thus are highly likely to be damaged by high-temperature heating.

  There is also a method in which an electronic element is formed directly on a silicon substrate, heated at 400 ° C. using a glass lid, the silicon substrate and glass are bonded by anodic bonding, and sealed. In this case, the substrates are directly sealed and separated into individual pieces by a dicing method. However, in anodic bonding, since the temperature is high, a component having low heat resistance may be thermally damaged.

  Patent Document 2 discloses a method for bonding at a low temperature by modifying the substrate surface as a treatment method for bonding at a reduced temperature. In the bonding method disclosed in Patent Document 2, the processing of the bonded substrate is managed by time. Depending on the contamination level of the bonded substrate, the bonding substrate cannot be processed in a predetermined processing time, and the contaminant remains and the bonding reliability remains. descend. On the other hand, if the treatment time is too long, the contamination is eliminated, but the surface of the bonded substrate becomes rough, the bonding strength is lowered, and the bonding reliability is lowered.

  As a method for determining this processing time, Patent Document 3 discloses that in the manufacture of a thin film transistor, a crystalline state and an amorphous state are determined based on a spectral characteristic of a semiconductor that is characteristically expressed between a crystalline thin film and an amorphous thin film. As a discrimination method, a technique using light reflectance is disclosed.

Further, Patent Document 4 discloses a technique for identifying the film quality of the silicon film from the reflection intensity or reflectivity by irradiating the crystal film quality of the silicon film with light of a specific wavelength.
JP 2003-110402 A JP-A-10-92702 Japanese Patent Laid-Open No. 11-274093 JP 2002-359194 A

  In the electronic device package, in order to perform bonding at a lower temperature described in Patent Document 2, it is necessary to modify the substrate surface. However, as a method for discriminating the modified substrate surface, the techniques disclosed in Patent Document 3 and Patent Document 4 can be applied to identify whether the crystal state of the substrate is a crystalline state or an amorphous state. There is a problem that the cleaning of the substrate surface is completed, that is, the contamination state of the surface of the silicon substrate cannot be determined.

  The present invention is directed to solving the above-described problems of the prior art, and in an electronic device package, a reforming method and an improved method that enable highly reliable bonding by improving the quality of the bonding surface of the substrate. An object of the present invention is to provide a bonding apparatus, a bonding method, and a bonding apparatus.

In order to achieve the above object, a modification method according to claim 1 of the present invention is a modification method for modifying a substrate, wherein an energy wave converted into plasma by an energy supply source is applied to the substrate. A cleaning step of irradiating and cleaning, an observation step of irradiating the substrate with light and observing the intensity of the reflected light reflected from the substrate, and a determination step of determining whether or not the intensity of the reflected light has reached a predetermined amount The emission intensity measuring means for observing the intensity of the reflected light from the substrate in the observation step moves to the substrate surface when the energy wave is stopped, and after the observation is finished, the substrate Move to a position where the energy wave is not irradiated from above the surface, and after cleaning the substrate by the cleaning process, the intensity of the reflected light is not less than a predetermined amount when the intensity of the reflected light observed in the observation process is not more than a predetermined amount in the determination process Wash until Repeat extent, characterized by terminating the judged to cleaning step process completion when the predetermined amount or more.

The reforming method described in claim 2 is the modification method of claim 1 Symbol mounting position for irradiating light to the substrate, characterized in that it is a peripheral portion of the substrate.

The modification method according to claim 3 is the modification method according to claim 1 or 2, wherein the intensity of the reflected light of the light irradiated on the substrate is observed before the energy wave is irradiated. Thus, a predetermined amount of reflected light intensity for determining stoppage of the energy wave is determined.

The modification method according to claim 4 is the modification method according to claim 3, wherein a predetermined amount of reflected light intensity for determining stoppage of the energy wave is calculated from the reflected light intensity. As described above, the reflectance is set to 1.02 or more.

The modification method described in claim 5 is the modification method according to any one of claims 1 to 4 , wherein the wavelength of the reflected light from the substrate is in a wavelength region of 450 to 750 nm. It is characterized by being.

In addition, the bonding method according to claim 6 is a bonding method for bonding two substrates, and becomes a lid with a first substrate on which a plurality of electronic elements forming an electronic element package are formed. A first step of cleaning the bonding surface with the second substrate by irradiating an energy wave converted into plasma by the first energy supply source and the second energy supply source, respectively; and the first substrate and the second substrate A second step of irradiating each substrate with light and observing the intensity of each reflected light reflected from the first substrate and the second substrate; and the observed intensity of each reflected light reaches a predetermined amount A third step of determining whether or not there is a fourth step of bonding the first substrate and the second substrate with the cleaned bonding surface, and the reflected light from the substrate in the second step The emission intensity measuring means for observing the intensity of the light stops the energy wave And move to the position where the energy wave is not irradiated from the bonding surface after the observation is finished, and stop the irradiation after the irradiation of the energy wave for a predetermined time in the first step. When the intensity of each reflected light observed in the second step is not more than a predetermined amount in the third step, the cleaning process in the first step is repeated until the intensity of the reflected light becomes not less than the predetermined amount. In the above case, it is determined that the processing is completed, and the first substrate and the second substrate are bonded in the fourth step.

The bonding method according to claim 7 is the bonding method according to claim 6 , wherein the first substrate and the second substrate are irradiated with light at the first substrate and the second substrate, respectively. It is each outer peripheral part, It is characterized by the above-mentioned.

Further, the bonding method according to claim 8 is the bonding method according to claim 6 or 7 , wherein the first substrate and the second substrate are irradiated with light before being irradiated with the energy wave. By observing the intensity of the reflected light, a predetermined amount of the reflected light intensity for determining the stop of the energy wave is determined.

The bonding method according to claim 9 is the bonding method according to claim 8 , wherein the predetermined amount of reflected light intensity for determining the stop of the energy wave is set to each of the first substrate and the second substrate. As a reflectance calculated from the reflected light intensity, the reflectance is 1.02 or more.

A reforming apparatus according to claim 10 is a reforming apparatus for reforming a substrate by the reforming method according to any one of claims 1 to 5 , wherein the reaction chamber carries the substrate, Observation of the intensity of the reflected light reflected from the substrate, the substrate stage on which the substrate is installed, the energy irradiation source that irradiates the substrate with energy waves, the vacuum means that keeps the reaction chamber in vacuum, the means that irradiates the substrate with light And a measuring means.

A bonding apparatus according to claim 11 is a bonding apparatus for bonding two substrates by the bonding method according to any one of claims 6 to 9 , wherein the reaction chamber carries in the two substrates. And a substrate stage on which the first substrate and the second substrate are placed at positions facing each other, an energy irradiation source for irradiating energy waves to the first substrate and the second substrate, and a reaction chamber in a vacuum. From the vacuum means, the bonding mechanism for bonding the first substrate and the second substrate, the means for irradiating light to each of the first substrate and the second substrate, the first substrate and the second substrate And a measuring means for observing the intensity of each reflected light reflected.

  According to the said structure, the quality in the joint surface of a board | substrate can be improved, and highly reliable joining can be performed by a joint surface.

  According to the present invention, the quality of the bonding surface between the substrate on which the plurality of electronic elements forming the electronic device package are formed and the substrate serving as the lid can be ensured, and high quality bonding can be achieved by this bonding surface. There is an effect that it can be realized.

  Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.

  FIG. 1 is a cross-sectional view showing a configuration of an electronic device package according to an embodiment of the present invention. As shown in FIG. 1, an electronic device package 1 includes a substrate 12 in which a plurality of semiconductor elements 11 as electronic elements are formed, and a cavity portion 14 having a plurality of recess structures for housing the semiconductor elements 11. It consists of the cover member 13 which has. The lid member 13 is provided with a cavity 14 and a groove 15 for dicing the chip after finally bonding the substrate 12 and the lid member 13 together. The substrate 12 and the lid member 13 are made of Si (silicon).

  An electric circuit (not shown) for receiving and transmitting an electric signal from the semiconductor element 11 is formed on the substrate 12 and is electrically connected to the outside through a through hole 16 in which copper is embedded. Moreover, it has the electrode 17 for mounting the chip | tip of the piece after dicing the electronic element package 1 to an external substrate.

(Embodiment 1)
FIG. 2 is a cross-sectional view showing a reformer used for the reforming process in the first embodiment of the present invention. In FIG. 2, reference numeral 21 denotes a reaction chamber. A substrate 12 made of Si (silicon) is placed on a substrate table 24, and similarly, a lid member 13 made of Si is fixed to an upper substrate table 25.

  An electrostatic chuck 26 is embedded in the upper substrate base 25, and the lid member 13 is attracted to the electrostatic chuck 26 by applying a voltage to the electrostatic chuck 26. A bellows 27 is attached to the upper substrate base 25. The upper substrate base 25 can be moved up and down by moving the bellows 27 up and down.

  Further, 28 is a vacuum exhaust port connected to a vacuum means for evacuating the inside of the reaction chamber 21, 29 is a neutral beam source for the substrate for modifying the substrate 12, and 30 is for the lid member for modifying the lid member 13. Neutral beam source. Gas supply pipes 31 and 32 and power supply wirings 33 and 34 are connected to neutral beam sources 29 and 30 which are energy irradiation sources, respectively. The gas supply pipes 31 and 32 and the power supply wirings 33 and 34 maintain the degree of vacuum with the reaction chamber 21 by the supply connectors 35 and 36.

  37 is an optical fiber for irradiating the substrate 12 with light and receiving reflected light from the substrate 12, 38 is a bellows for moving the optical fiber 37 in the linear direction in the reaction chamber 21, and 39 is for the substrate 12. A light source (not shown) for supplying light and a first optical fiber system that measures the intensity of the light and calculates the reflectance from the intensity of the reflected light.

  Similarly, 40 is an optical fiber for irradiating the lid member 13 with light and receiving reflected light from the lid member 13, 41 is a bellows for moving the optical fiber 40 in a linear direction within the reaction chamber 21, 42. Is a light source (not shown) for supplying light to the lid member 13 and a second optical fiber system that measures the intensity of the reflected light and calculates the reflectance. It also serves as means for irradiating the substrate 12 and the lid member 13 with light and means for measuring reflected light.

  FIG. 3 is a flowchart showing a process for modifying and bonding the substrates. The processing will be described with reference to the reformer of FIG. 2 based on the flowchart shown in FIG.

  First, the lid member 13 is placed on the substrate stage 24 in the reaction chamber 21 shown in FIG. 2 via the electrostatic chuck 26 on the substrate 12 and the upper substrate stage 25 (S1). The member 13 is irradiated with light, and a predetermined amount of reflected light intensity for determining stoppage of the energy wave is determined (S2).

The inside of the reaction chamber 21 is evacuated to a vacuum degree of 10 ⁻⁵ Pa by vacuum means, and then 20 sccm of Ar (argon) gas is supplied to the neutral beam sources 29 and 30 from the gas supply pipes 31 and 32, respectively. A voltage of 1.2 KV is applied from 33 and 34. Since the reaction chamber 21 is supplied with Ar gas, the degree of vacuum is maintained at 10 ⁻² Pa. Plasma is generated in the neutral beam sources 29 and 30 that are energy supply sources, and neutral Ar is extracted from each of the neutral beam sources 29 and 30 as an energy wave (S3).

  The substrate 12 is irradiated with a neutral beam source 29 and the lid member 13 is irradiated with a neutral beam source 30 with Ar atoms. Thereby, the surfaces of the substrate 12 and the lid member 13 are cleaned by a sputtering action. The energy wave is stopped after a predetermined time, for example, 60 seconds (S4).

  Thereafter, the optical fibers 37 and 40 are moved to the surfaces of the substrate 12 and the lid member 13, and light from a halogen lamp (not shown) is irradiated onto the surfaces of the substrate 12 and the lid member 13 through the optical fibers 37 and 40. Then, the reflected light from the surfaces of the substrate 12 and the lid member 13 is received by the same optical fibers 37 and 40, and the reflectance is measured by the first and second optical fiber systems 39 and 42 (S5).

  The reflectance is confirmed (S6), and if it is a predetermined reflectance (for example, less than 1.02) (No in processing S6), the optical fibers 37 and 40 are separated from the surfaces of the substrate 12 and the lid member 13 to form the substrate. 12 is irradiated with a neutral beam source 29, and the lid member 13 is irradiated with a neutral beam source 30 for Ar atoms for a certain period of time (S3 to S4).

  The optical fibers 37 and 40 are again moved onto the surfaces of the substrate 12 and the lid member 13, and light from a halogen lamp (not shown) is passed through the optical fibers 37 and 40 onto the surfaces of the substrate 12 and the lid member 13. The reflected light from the surfaces of the substrate 12 and the lid member 13 is received by the same optical fibers 37 and 40, and the reflectance is measured from the reflected light intensity by the first and second optical fiber systems 39 and 42 (S6).

  When the reflectance of a predetermined amount is reached (Yes in processing S6), both are measured on the surface of the substrate 12 and the lid member 13 by this reflectance measurement (S7), and one reflectance is a predetermined reflectance. When it becomes (for example, 1.02 or more) (No in process S7), the neutral beam source 29 (or neutral beam source 30) that has become is stopped (S8), and still exceeds the predetermined reflectance. In the other case, the optical fibers 37 and 40 are again separated from the surfaces of the substrate 12 and the lid member 13 in the same manner as described above, and the substrate 12 or the lid member 13 whose reflectance is not equal to or higher than a certain level is used as the neutral beam source. 29 or the neutral beam source 30 irradiates Ar atoms for a certain time (S3 to S4).

  When this method is repeated to obtain a predetermined amount (Yes in process S6), the reflectance of light from both surfaces of the substrate 12 and the lid member 13 reaches a predetermined reflectance (for example, 1.02 or more). The neutral beam sources 29 and 30 are stopped (Yes in process S7).

Thereafter, the upper substrate base 25 that fixes the lid member 13 is lowered, the lid member 13 is brought into contact with the substrate 12, and is pressurized and bonded with a pressure of 5 × 10 ³ N / m ² (S9). Thereby, an electronic element package is created.

  FIG. 4 shows a graph in which processing time and bonding strength are measured. If the processing time for cleaning becomes longer, the surface roughness of the substrate 12 and the lid member 13 becomes rough, and the phenomenon that the bonding strength is reduced occurs. In fact, as shown in FIG. 4, when the treatment was performed for 4 minutes, the surface roughness was 0.35 nm, which was twice that before the treatment. This can be considered that the contaminants adhering to the surfaces of the substrate 12 and the lid member 13 are modified and removed, and the surface roughness is increased because the base is sputtered. FIG. 5 shows the relationship between the wavelength of light applied to the substrate after processing and the reflectance. As shown in FIG. 5, it can be seen that when the wavelength of light is in the range of 450 to 750 nm, the relationship between the treatment and the reflectance is clearly apparent.

  When the reflectance was 1.02 or more, good bonding strength was obtained. For this reason, if the reflectance is less than 1.02, contaminants still remain on the surfaces of the substrate 12 and the lid member 13 to reduce the bonding strength, whereas the reflectance is 1.02 or more. If so, it is considered that the contaminant has been removed.

  In addition, although it demonstrated that the removal of a contaminant was a reason for a reflectance changing, the following can be considered as the reason. Although it is conceivable that the reflectance changes due to the change in the surface roughness, as a result of investigating the relationship between the processing time and the surface roughness, the processing time up to 2 minutes is improved as shown in FIG. It was found that the surface roughness hardly changed.

  FIG. 7 shows the result of XPS (X-ray photoelectron spectroscopy) analysis of the surface of the substrate 12 after the surface treatment, and represents the converted value of C (carbon) concentration on the surface of the substrate 12 made of Si. FIG. 7 shows an analysis in the depth direction of the substrate 12 by irradiation with an Ar beam, and shows that an organic substance of about 10 nm as a C compound is deposited on the surface of the substrate 12.

  From the above, it is considered that the change in reflectance is due to the removal of organic substances. That is, the organic substance composed of C (carbon), H (hydrogen), and O (oxygen) absorbs light, so that the organic substance is removed after the surface treatment, resulting in an increase in reflectance.

  As described above, according to the first embodiment, the substrate 12 and the lid member 13 are contaminated on the surfaces of the substrate 12 and the lid member 13 when light is irradiated onto the substrate 12 and the reflectance exceeds a predetermined value. Objects are removed, the quality of the substrate 12 and the lid member 13 can be ensured, and high-quality bonding can be realized. Particularly, by managing the surface of each substrate 12 and lid member 13 one by one, the bonding reliability is further increased.

(Embodiment 2)
FIG. 8 is a sectional view showing a reformer used for the reforming process in the second embodiment of the present invention. The reforming apparatus used in the second embodiment has substantially the same configuration as the joining apparatus described in the first embodiment, and instead of the optical fibers 37 and 40 in FIG. And the point that optical fibers 44 and 46 for receiving light are provided.

  As shown in FIG. 8, in the reaction chamber 21, the substrate 12 is placed on the substrate table 24, and the lid member 13 is fixed to the upper substrate table 25. An electrostatic chuck 26 is embedded in the upper substrate base 25, and the lid member 13 is attracted to the electrostatic chuck 26 by applying a voltage to the electrostatic chuck 26. A bellows 27 is attached to the upper substrate base 25, and the upper substrate base 25 is moved up and down by moving the bellows 27 up and down.

  Further, 28 is a vacuum exhaust port, 29 is a neutral beam source for the substrate for modifying the substrate 12, and 30 is a neutral beam source for the lid member for modifying the lid member 13. The neutral beam sources 29 and 30 are connected to gas supply pipes 31 and 32 and power supply wirings 33 and 34, respectively. The gas supply pipes 31 and 32 and the power supply wirings 33 and 34 maintain the degree of vacuum with the reaction chamber 21 by the supply connectors 35 and 36.

  43 is an optical fiber (light emitting side) for obliquely incident on the substrate 12 to irradiate light, and supplies light from a halogen lamp (not shown). 44 receives light reflected from the substrate 12. The optical fiber (light receiving side). The optical fiber 44 for receiving light is connected to an optical fiber system (not shown) that measures the intensity of light and calculates the reflectance.

  Similarly, 45 is an optical fiber (light emitting side) for obliquely entering the lid member 13 and irradiating light, and supplies light from a halogen lamp (not shown), and 46 is light reflected from the lid member 13. Is an optical fiber (light receiving side). The optical fiber 46 for receiving light is connected to an optical fiber system (not shown) that measures the intensity of light and calculates the reflectance.

  The optical fibers 43 and 45 for supplying light and the optical fibers 44 and 46 for receiving light are attached via an O-ring (not shown) or the like in order to keep the reaction chamber 21 in a vacuum.

The reformer configured as described above will be described with reference to FIG. After evacuating the reaction chamber 21 shown in FIG. 8 to a degree of vacuum of 10 ⁻⁵ Pa, 20 sccm of Ar (argon) gas is supplied to the neutral beam sources 29 and 30 from the gas supply pipes 31 and 32, respectively. A voltage of 1.2 KV is applied from 33 and 34. Since the reaction chamber 21 is supplied with Ar gas, the degree of vacuum is maintained at 10 ⁻² Pa. Plasma is generated in the neutral beam sources 29 and 30, and neutral Ar is extracted from each of the neutral beam sources 29 and 30. The substrate 12 is irradiated with a neutral beam source 29 and the lid member 13 is irradiated with a neutral beam source 30 with Ar atoms.

  Thereby, the surfaces of the substrate 12 and the lid member 13 are cleaned by a sputtering action. During the neutral beam irradiation, the surfaces of the substrate 12 and the lid member 13 are irradiated with light from the halogen lamps from the optical fibers 43 and 45, and the reflected light from the surfaces of the substrate 12 and the lid member 13 is simultaneously transmitted to the optical fiber. Light is received at 44 and 46, and the reflectance is measured by an optical fiber system.

  If the neutral beam source 29 (or neutral beam source 30) whose reflectivity has reached a predetermined reflectivity (for example, 1.02 or higher) is stopped, and has not yet exceeded the predetermined reflectivity Further, the neutral beam is irradiated until a predetermined reflectance (for example, 1.02 or more) is reached. Then, when both the reflectance from the surface of the substrate 12 and the lid member 13 reach a predetermined reflectance (for example, 1.02 or more), the neutral beam sources 29 and 30 are stopped.

Thereafter, the upper substrate base 25 that fixes the lid member 13 is lowered, the lid member 13 is brought into contact with the substrate 12, and is bonded by being pressurized with a pressure of 5 × 10 ³ N / m ² . Thereby, an electronic element package is created.

  As described above, according to the second embodiment, the substrate 12 and the lid member 13 are irradiated with light and the modification process is terminated when the reflectance reaches a predetermined value or more, so that the modification process is completed in real time. It is possible to observe and process the reforming situation.

  Further, by observing the reflectance in real time, it is possible to determine whether or not the contaminants on the surfaces of the substrate 12 and the lid member 13 have been removed, and it is also possible to ensure the quality of the substrate 12 and the lid member 13. High quality bonding can be realized. In particular, it is possible to further improve the bonding reliability by managing the surfaces of the substrate 12 and the lid member 13 in real time one by one.

(Embodiment 3)
The reforming process in Embodiment 3 of the present invention will be described. The configuration of the reforming apparatus in the third embodiment is the same as that of the reforming apparatus shown in FIG. The difference is that the positions where the light from the optical fibers 43 and 45 is irradiated onto the substrate 12 and the lid member 13 are the outer peripheral portions of the substrate 12 and the lid member 13. This is because the central part of the substrate 12 and the lid member 13 is more irradiated from the outer peripheral part due to the nature of the irradiation of the neutral beam sources 29 and 30. By observing the outer peripheral portion having a small reforming ability, it is possible to prevent the removal of contaminants. And in this Embodiment 3, it measured in the position of 15 mm inside from the outer periphery of the board | substrate 12 and the cover member 13. FIG.

The reformer configured as described above will be described with reference to FIG. After evacuating the reaction chamber 21 shown in FIG. 8 to a degree of vacuum of 10 ⁻⁵ Pa, 20 sccm of Ar (argon) gas is supplied to the neutral beam sources 29 and 30 from the gas supply pipes 31 and 32, respectively. A voltage of 1.2 KV is applied from 33 and 34. Since the reaction chamber 21 is supplied with Ar gas, the degree of vacuum is maintained at 10 ⁻² Pa. Plasma is generated in the neutral beam sources 29 and 30, and neutral Ar is extracted from each of the neutral beam sources 29 and 30. The substrate 12 is irradiated with a neutral beam source 29, and the lid member 13 is irradiated with a neutral beam source 30, respectively.

  Thereby, the surfaces of the substrate 12 and the lid member 13 are cleaned by a sputtering action. During the irradiation of the neutral beam, the halogen lamp light is irradiated from the optical fibers 43 and 45 to the outer peripheral portions of the surface of the substrate 12 and the lid member 13, and the reflected light of the substrate 12 and the lid member 13 is simultaneously transmitted to the optical fiber. Light is received at 44 and 46, and the reflectance is measured by an optical fiber system.

  If the neutral beam source 29 (or neutral beam source 30) whose reflectivity has reached a predetermined reflectivity (for example, 1.02 or higher) is stopped, and has not yet exceeded the predetermined reflectivity Further, irradiation is performed until a predetermined reflectance (for example, 1.02 or more) is reached. Then, when both the reflectance from the surface of the substrate 12 and the lid member 13 reach a predetermined reflectance (for example, 1.02 or more), the neutral beam sources 29 and 30 are stopped.

Thereafter, the upper substrate base 25 that fixes the lid member 13 is lowered, the lid member 13 is brought into contact with the substrate 12, and is bonded by being pressurized with a pressure of 5 × 10 ³ N / m ² . Thereby, an electronic element package is created.

  As described above, according to the third embodiment, the positions where the light from the optical fibers 43 and 45 is irradiated onto the substrate 12 and the lid member 13 are the outer peripheral portions of the substrate 12 and the lid member 13. The entire surface of the lid member 13 can be completely modified, and it is possible to prevent contaminants from remaining. As a result, the quality of the substrate 12 and the lid member 13 can be ensured, and further high-quality bonding can be realized.

  Note that the processing for irradiating the outer peripheral portions of the substrate 12 and the lid member 13 and observing the reflected light performed in the third embodiment may be performed in the optical fibers 37 and 40 in the first embodiment. Of course, as an observation of the reflected light in the optical fibers 37 and 40, it is needless to say that a plurality of locations extending from the outer peripheral portion of the surface of the substrate 12 and the lid member 13 to the outer peripheral portion in another direction may be observed. .

  As mentioned above, although embodiment which concerns on this invention has been described, this invention is not limited to said each embodiment, A various deformation | transformation is possible.

  In Embodiments 1 to 3, argon gas was used, but oxygen gas instead of argon has a sputtering effect and an effect of removing organic substances, so the same effect can be obtained and is not limited to argon gas. .

  Further, although the neutral wave is used as the energy wave, it is not limited to the modification by the neutral beam, but other methods such as ion beam, atomic beam, radical beam, plasma by high frequency discharge of 13.56 MH which is generally used. It may be modified by.

Although the substrate 12 and the lid member 13 are made of silicon, the present invention can be applied to other insulating materials such as ceramic and glass (SiO ₂ ).

  Further, although the substrate 12 and the lid member 13 are joined, the same applies to the case where the lid member 13 is another substrate and the substrate is joined to the substrate.

  In addition, although the case where the bonding surface between the substrate 12 and the lid member 13 is cleaned, the present invention is also applied as a modification method for judging whether or not the modification can be performed when processing one substrate such as plasma cleaning. Needless to say, you can.

  In the first embodiment, the optical fibers 37 and 40 are in the reaction chamber 21. However, a preliminary chamber for supplying the substrate 12 and the lid member 13 is provided in the reaction chamber 21. Even if 40 is installed and the judgment of reforming is made, the same effect is obtained.

  The reforming method, the reforming apparatus, the joining method, and the joining apparatus according to the present invention ensure the quality of the joint surface between the substrate on which a plurality of electronic elements forming the electronic element package are formed and the substrate that is the lid. Therefore, higher quality bonding can be realized, which is useful in a method for manufacturing an electronic device package.

Sectional drawing which shows the structure of the electronic element package in embodiment of this invention Sectional drawing which shows the reformer used for the reforming process in Embodiment 1 of this invention The flowchart which shows the process which modify | reforms and joins the board | substrate in this Embodiment 1. The figure which shows the graph which measured processing time and joint strength The figure which shows the relationship between the wavelength of the light irradiated to the substrate after processing, and reflectance Diagram showing the relationship between processing time and surface roughness The figure showing the converted value of C (carbon) on the surface of the substrate 12 made of Si as a result of XPS (X-ray photoelectron spectroscopy) analysis of the substrate surface after the surface treatment. Sectional drawing which shows the modification | reformation apparatus used for the modification | reformation process in Embodiment 2 of this invention.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Electronic device package 11 Semiconductor device 12 Substrate 13 Cover member 14 Cavity part 15 Groove processing 16 Through hole 17 Electrode 21 Reaction chamber 24 Substrate base 25 Upper substrate base 26 Electrostatic chuck 27, 38, 41 Bellows 28 Vacuum exhaust port 29 Substrate Neutral beam source 30 for use Neutral beam source 31 and 32 for cover member Gas supply pipes 33 and 34 Power supply wirings 35 and 36 Supply connectors 37 and 40 Optical fiber 39 First optical fiber system 42 Second optical fiber system 43 and 45 Optical fiber (Light emission side)
44, 46 Optical fiber (light receiving side)

Claims (11)

A modification method for modifying a substrate, wherein a cleaning process is performed by irradiating the substrate with an energy wave converted into plasma by an energy supply source, and the substrate is irradiated with light and reflected from the substrate. An observation step of observing the intensity of the reflected light, and a determination step of determining whether or not the intensity of the reflected light has reached a predetermined amount,
The emission intensity measuring means for observing the intensity of the reflected light from the substrate in the observation step moves on the substrate surface when the energy wave is stopped, and after the observation is finished, the energy from the substrate surface is measured. Move to a position where no waves are irradiated,
After cleaning the substrate by the cleaning step, the cleaning step is repeated until the intensity of the reflected light observed in the observation step is not more than the predetermined amount in the determination step until the intensity of the reflected light is not less than the predetermined amount. The reforming method is characterized in that when the amount exceeds the predetermined amount, it is determined that the processing is completed, and the cleaning step is terminated. A modification method of claim 1 Symbol placement, position, modification method, wherein the a periphery portion of the substrate for emitting light to the substrate. The reforming method according to claim 1 or 2 , wherein, before irradiating the energy wave, the intensity of reflected light of the light irradiated on the substrate is observed to determine stoppage of the energy wave. A reforming method, wherein a predetermined amount of the reflected light intensity is determined. The modification method according to claim 3 , wherein the reflectance is 1.02 or more, with a predetermined amount of reflected light intensity for determining stoppage of the energy wave being a reflectance calculated from the reflected light intensity. A modification method characterized by the above. A modification method according to any one of claims 1-4, the wavelength to observe the reflected light from the substrate, modifying method which is a wavelength region of 450 to 750 nm. A bonding method for bonding two substrates, wherein a bonding surface between a first substrate on which a plurality of electronic elements forming an electronic element package are formed and a second substrate serving as a lid is respectively Irradiating light to each of the first substrate and the second substrate by irradiating and cleaning the energy wave generated by plasma from the first energy supply source and the second energy supply source; A second step of observing the intensity of each reflected light reflected from the first substrate and the second substrate; and a step of determining whether or not the intensity of each reflected light observed has reached a predetermined amount. 3 and a fourth step of bonding the first substrate and the second substrate with the cleaned bonding surface,
The emission intensity measuring means for observing the intensity of the reflected light from the substrate in the second step moves onto the bonding surface when the energy wave is stopped, and from the bonding surface after the observation is finished. Move to a position where the energy wave is not irradiated,
After the irradiation of the energy wave for a predetermined time in the first step, the irradiation is stopped and the intensity of each reflected light observed in the second step is less than the predetermined amount in the third step. The cleaning process of the first step is repeated until the intensity of the reflected light is equal to or greater than the predetermined amount. When the intensity is greater than the predetermined amount, it is determined that the process is complete, and the first substrate and the first step are determined in the fourth step. A bonding method comprising bonding two substrates. The bonding method according to claim 6 , wherein a position where light is applied to each of the first substrate and the second substrate is an outer peripheral portion of each of the first substrate and the second substrate. A characteristic joining method. The bonding method according to claim 6 or 7 , wherein before irradiating the energy wave, the intensity of reflected light of the light irradiated to each of the first substrate and the second substrate is observed, A joining method, wherein a predetermined amount of the reflected light intensity for determining stoppage of the energy wave is determined. 9. The bonding method according to claim 8 , wherein a predetermined amount of reflected light intensity for determining stoppage of the energy wave is calculated from the reflected light intensity of each of the first substrate and the second substrate. The joining method according to claim 1, wherein the reflectance is 1.02 or more. A reformer for reforming a substrate by modifying the method according to any one of claims 1 to 5
A reaction chamber for carrying the substrate; a substrate table on which the substrate is placed; an energy irradiation source for irradiating the substrate with an energy wave; a vacuum means for keeping the reaction chamber in a vacuum; and a means for irradiating the substrate with light. And a measuring device for observing the intensity of the reflected light reflected from the substrate. A bonding apparatus for bonding two substrates by the bonding method according to claim 6 ,
The reaction chamber for carrying the two substrates, the substrate stage on which the first substrate and the second substrate are installed at positions facing each other, and the first substrate and the second substrate are irradiated with energy waves, respectively. Energy irradiation source, vacuum means for keeping the reaction chamber in vacuum, a bonding mechanism for bonding the first substrate and the second substrate, and the first substrate and the second substrate respectively. A joining apparatus comprising: means for irradiating light; and measuring means for observing the intensity of each reflected light reflected from the first substrate and the second substrate.

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