JP2006073780A

JP2006073780A - Normal-temperature joint method, equipment, and device

Info

Publication number: JP2006073780A
Application number: JP2004255157A
Authority: JP
Inventors: Masuaki Okada; 益明岡田
Original assignee: BONDOTEKKU KK
Current assignee: BONDOTEKKU KK
Priority date: 2004-09-02
Filing date: 2004-09-02
Publication date: 2006-03-16

Abstract

<P>PROBLEM TO BE SOLVED: To solve problem such as low production efficiency for long time required for conventional heating joint or anode joint at glass-Si joint, or device fault such as warping for thermal expansion. <P>SOLUTION: After applying surface activation to joint surface of the joint objects by atomic beams, ion beams or energy waves (plasma), this solution separates the device to be temporarily joined at normal temperature from a device to be joined completely by heating and lines up multiple joint devices. In addition, this solution temporarily joins two glasses at both sides of devices to be encapsulated from both sides and then joins them by heating without warping. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

本発明は、ウエハーなどの複数の被接合物をプラズマなどエネルギー波処理により仮接合し、加熱を伴う本接合工程と切り分ける方法及び接合装置に関する。 The present invention relates to a method and a bonding apparatus in which a plurality of objects such as wafers are temporarily bonded by an energy wave process such as plasma and separated from a main bonding step involving heating.

また、特許文献１に示す常温接合方法では金属同士をＡｒイオンビームによりエッチングし、表面活性化させた状態で常温で接合する例が示されている。しかし、この方法では、表面の有機物や酸化膜を除去して金属のダングリングボンドで活性化された面を作りだし、原子間力により接合するため、半導体であるＳｉや特に酸化物であるガラスやＳｉＯ^２は強固に接合できない。 In addition, the room temperature bonding method disclosed in Patent Document 1 shows an example in which metals are etched with an Ar ion beam and bonded at room temperature in a surface activated state. However, in this method, surface organic substances and oxide films are removed to create a surface activated by metal dangling bonds, and bonding is performed by atomic force. Therefore, Si as a semiconductor, especially glass as an oxide, SiO ² cannot be bonded firmly.

また、図１１に示すように、従来アライメントは露光機用のマスクとウエハーを位置あわせするマスクアライナーが用いられ、大気中でアライメントして重ね合わせ、ジグやクリップでとめて、接合チャンバーへ運び、高温のもと加熱接合している。真空中で接合する場合は、減圧チャンバー中でガラスをＳｉと隙間をあけて保持し、真空に引いてからガラスを下降させて接触し加熱接合を行っている。 In addition, as shown in FIG. 11, in the conventional alignment, a mask aligner for aligning a mask for an exposure machine and a wafer is used, aligned and overlapped in the atmosphere, fastened with a jig or clip, and carried to a bonding chamber, Heat bonding is performed under high temperature. In the case of bonding in vacuum, the glass is held in a vacuum chamber with a gap, and after vacuuming, the glass is lowered and contacted to perform heat bonding.

また、特許文献２に示すように被接合物を対向配置し、プラズマ処理した場合には、必ずどちらかの被接合物側がプラズマ電極となり、反応ガスイオンが加速されて衝突するため、有機物層を取り除く物理的なエッチングには適するがＯＨ基などの化学処理には強すぎて向かない。 In addition, as shown in Patent Document 2, when an object to be bonded is disposed oppositely and plasma treatment is performed, one of the objects to be bonded always becomes a plasma electrode, and reactive gas ions are accelerated and collide. It is suitable for physical etching to be removed, but is not suitable for chemical treatment such as OH group.

また、従来、Ｓｉとガラスのウエハー接合において、両ウエハーを接触させた状態でガラス側をカソードとして電圧を印加し、かつ５００℃程度の高温に加熱することで陽極接合させる方法が知られている。 Further, conventionally, in Si and glass wafer bonding, a method is known in which a voltage is applied with the glass side as a cathode in a state where both wafers are in contact with each other, and anodic bonding is performed by heating to a high temperature of about 500 ° C. .

また、図８に示すように高周波デバイスやＭＥＭＳデバイスは片側や両側から封止する方法がよく用いられる。 Further, as shown in FIG. 8, a method of sealing from one side or both sides is often used for high-frequency devices and MEMS devices.

特開昭５４−１２４８５３JP 54-124853 A 特開２００３−３１８２１７JP 2003-318217 A

特許文献１に示す常温接合方法では、表面の有機物や酸化膜を除去して金属や半導体の活性化された面を作りだし原子間力により接合するため、金属以外のＳｉ半導体や特に酸化物であるガラスやＳｉＯ^２は強固に接合できない。また、常温であるが故に、軟化していないので、微小なパーテクルからなるゴミや表面の平坦度うねりにより接合できない隙間や残留応力を残すために接合強度不足の部分をつくってしまうことになる。そのため、低温でも数時間のアニーリングを加えて残留応力を除去してやる必要がある。 In the room-temperature bonding method shown in Patent Document 1, since organic substances and oxide films on the surface are removed to create activated surfaces of metals and semiconductors and bonding is performed by atomic force, Si semiconductors other than metals and particularly oxides are used. Glass and SiO ² cannot be bonded firmly. Further, since it is normal temperature, it is not softened, and therefore, a portion having insufficient bonding strength is created in order to leave a gap or residual stress that cannot be bonded due to dust consisting of minute particles or surface flatness waviness. Therefore, it is necessary to remove the residual stress by annealing for several hours even at a low temperature.

また、図１１のようにジグで固定する方法も考えられるが、高い位置合わせ精度が必要である場合や真空中で接合する必要がある場合には、課題が残り、次に例を示す。従来のマスクアライナーを用いたアライメント方法では、大気中でアライメントするため、接合チャンバーへ搬送するために図１１に示すようにジグで固定して搬送する。また、例えアライメント後にジグで隙間を空けたまま搬送し、真空チャンバー内で接合を行うとしても、隙間を閉じる時に位置ずれをおこし数μｍ以内の高精度な接合は難しい。また、大気でアライメントした後、同チャンバーを減圧する場合には、減圧によるチャンバーのひずみや保持手段の引力によるズレなどから精度は上がらない。
また、特許文献２に示すように被接合物を対向配置し、プラズマ処理した場合には、必ずどちらかの被接合物側がプラズマ電極となり、反応ガスイオンが加速されて衝突するため、有機物層を取り除く物理的エッチングには適するがＯＨ基などの化学処理による表面活性化には強すぎて向かない。 A method of fixing with a jig as shown in FIG. 11 is also conceivable. However, when high alignment accuracy is required or when bonding is required in a vacuum, a problem remains, and an example is shown below. In an alignment method using a conventional mask aligner, in order to perform alignment in the atmosphere, the wafer is transferred by being fixed with a jig as shown in FIG. Further, even if the gap is transferred with a jig after alignment and bonding is performed in the vacuum chamber, positional displacement occurs when the gap is closed, and high-precision bonding within a few μm is difficult. In addition, when the chamber is decompressed after alignment in the atmosphere, the accuracy does not increase due to distortion of the chamber due to decompression or displacement due to the attractive force of the holding means.
In addition, as shown in Patent Document 2, when an object to be bonded is disposed oppositely and plasma treatment is performed, one of the objects to be bonded always becomes a plasma electrode, and reactive gas ions are accelerated and collide. Although it is suitable for physical etching to be removed, it is too strong for surface activation by chemical treatment such as OH group.

また、従来の方法では陽極接合に数時間を要するため、生産効率が悪かった。また、接着剤など使って仮接合するとＳｉとガラス間に異物を噛むことになるので陽極接合できなくなる。特に高精度に位置を合わせて接合するＭＥＭＳデバイスなどでは効率が悪いまま生産するしか手がなかった。
また、図８に示すように高周波デバイスやＭＥＭＳデバイスの片側や両側から封止する方法において、一般的に良く使われる材料で例をあげると、Ｓｉの片側または両側をガラスで封止する構造となる。しかし、３枚構造でも片側から順番に接合していくことになるのでＳｉとガラスの線膨張係数の差から図９〔１〕に示すように接合時の加熱によりそりが発生してしまい、最悪割れることになる。 In addition, the conventional method requires several hours for anodic bonding, so that the production efficiency is poor. In addition, when temporary bonding is performed using an adhesive or the like, foreign matter is bitten between Si and glass, so that anodic bonding cannot be performed. In particular, MEMS devices that are aligned with high precision and joined can only be produced with low efficiency.
Further, in the method of sealing from one side or both sides of a high-frequency device or MEMS device as shown in FIG. 8, an example of a commonly used material is a structure in which one side or both sides of Si are sealed with glass. Become. However, even in the three-piece structure, since bonding is performed sequentially from one side, warpage occurs due to heating during bonding as shown in FIG. 9 [1] due to the difference in linear expansion coefficient between Si and glass. Will crack.

そこで本発明の課題は、被接合物同士の接合面を原子ビーム、イオンビームまたはプラズマであるエネルギー波により表面活性化処理した後、接合する方法において、常温のもと仮接合する工程または装置と、加熱を加えて本接合する工程または装置を分離する方法及び接合装置を提供することにある。 Accordingly, an object of the present invention is to provide a process or an apparatus for temporarily bonding at room temperature in a method of bonding after bonding the surfaces of objects to be bonded to each other by surface activation treatment using an energy wave that is an atomic beam, an ion beam or plasma. Another object of the present invention is to provide a method and a bonding apparatus for separating a process or apparatus for performing main bonding by applying heat.

上記課題を解決するための本発明に係る接合方法及び接合装置双方の手段を一括して以降に説明する。上記課題を解決するために本発明に係る接合方法及び接合装置は、被接合物同士の接合面を原子ビーム、イオンビームまたはプラズマであるエネルギー波により表面活性化処理した後、接合する方法において、エネルギー波照射手段を備え、常温のもと仮接合する工程または装置と、加熱を加えて本接合する工程または装置を分離する方法からなる。また、被接合物同士の接合面を原子ビーム、イオンビームまたはプラズマであるエネルギー波により表面活性化処理した後、接合する方法において、エネルギー波により表面活性化する手段を備え、常温のもと仮接合する工程と、加熱を加えて本接合する工程を分離した接合装置からなる。常温とは、従来低温で金属接合できる代表的なハンダが１８３℃で接合できるのに対し、さらなる低温での接合が可能となる１５０℃以下での接合を示し、室温であることがより好ましい。従来からの接合方法は接着剤を使用したり、高温加熱により拡散接合する方法が知られている。接着剤は仮接合することができるが、ＭＥＭＳのような微細な構造体の接合や、半導体のような電気的接合には使用できない。また、接着力も弱かったり、ガスを放出したり、水分を吸収するなどデメリットも多い。また、拡散方法では、高温であるため、材料の耐熱の問題や異種材料間の接合では線膨張係数の差からそりが発生したり、最悪割れるという問題が残る。しかし、エネルギー波により表面活性化処理し、表面活性化されたものを常温で直接接合できればこれらの課題は解決できる。しかし、常温であるが故、量産材料の表面粗さやうねりによる残留応力やひずみを除去してやらないと接合強度はアップしないので、仮接合には容易に使用できるが、本接合するためには、加熱のもと数時間アニーリングしてやることにより、接合強度をアップする必要があり、これをひとつの工程または装置で行うと量産効率は低下する。そのため、常温で張り合わせる仮接合工程と加熱による本接合工程を分離し、別装置としてやることで量産効率をアップすることができる。
また、仮接合工程または装置の台数１に対し、複数の本接合工程または装置をバランスさせる前述方法からなる。また、前記仮接合工程の数１に対し、複数の本接合工程をバランスさせる前記に記載の接合装置からなる。１台の仮接合装置に対し、複数の本接合装置でラインバランスをとってやることでさらに量産効率をアップすることができる。たとえば、仮接合に１０分かかり、本接合に１時間を要する場合は、仮接合装置１に対し、本接合装置を６並べてやることで１０分に１枚の接合が可能となる。コスト的にも６台の仮本一体装置を並べるより、１台の仮接合装置と単純に加熱するだけの本接合装置を６台並べるほうが圧倒的にコウトダウンできる。
また、３枚以上の被接合物を重ねて接合する方法において、線膨張係数が等しい被接合物で、線膨張係数の異なる被接合物を両側から挟み込む前述方法からなる。また、線膨張係数が等しい被接合物で、線膨張係数の異なる被接合物を両側から挟み込み、３枚以上の被接合物を重ねて陽極接合する方法において、中央部材から両端部材に向けて電圧を同時に印加する手段を持つ前記に記載の接合装置からなる。図８に示すように高周波デバイスやＭＥＭＳデバイスにおいては、片側を封止する方法と両側を封止する方法があるが、図９〔１〕に示すように片側を封止する方法では、２つの材料の線膨張係数の差からそりが発生する。図９〔２〕に示すように線膨張係数が等しい被接合物で、線膨張係数の異なる被接合物を両側から挟み込んだ後、加熱すれば両サイドから相反する力で打ち消すため、そりは発生しなくなる。しかし、従来の方法では、張り合わせ精度を出すためにはひとつずつ加熱して接合していくしか方法がなかった。これは、接着剤を使わずに仮止めするためにジグでクランプしてやることになるが、位置がずれたり、クランプするスペースがなかったりして問題があった。そのため表面活性化により常温で仮接合する方法を用いれば、図９〔２〕に示すように３つ以上の部材を両側を線膨張係数の等しい材料で挟み込んで位置精度をだして常温仮接合させた後、加熱して本接合することでそりなく高精度に接合することができる。もちろん仮接合装置に対し、複数の本接合装置を並べることで生産効率を上げることができる。
また、前記仮接合を減圧チャンバー中で、減圧下またはガス置換された中で接合し、前記本接合を大気中で行う前述方法からなる。また、前記仮接合工程に減圧チャンバーを備え、仮接合を減圧チャンバー中で、減圧下またはガス置換された中で接合し、前記本接合を大気中で行う前記に記載の接合装置からなる。図８に示すような内部を真空または不活性ガスで封止するデバイスにおいて、仮接合を減圧チャンバー中で減圧雰囲気またはガス置換雰囲気で行えば、本接合は大気中で行っても、仮接合状態で封止されているので大気が混入することはない。特に親水化処理で接合している場合は水が界面に介在しているので封止効果も高い。そのため本接合は大気中で行え、コストダウンと効率アップが達成される。
また、前記エネルギー波がプラズマである前述方法からなる。また、前記エネルギー波がプラズマであり、プラズマ処理手段を備えた前記に記載の接合装置からなる。また、エネルギー波が減圧または大気圧プラズマであれば、他のエネルギー波に比べて容易な真空度で扱え、コストダウンできる。また、大気圧プラズマであればより容易に扱える。但し、接合材料によっては減圧プラズマ処理をしないと接合できないものもあり、接合には優位である。
また、前記プラズマが減圧プラズマであり、処理後、同じチャンバー内で連続して被接合物同士を真空中で接触させ接合を行う前述方法からなる。また、前記プラズマが減圧プラズマであり、減圧可能な真空チャンバーとプラズマ発生手段とプラズマ反応ガス供給手段を備え、処理後、同じチャンバー内で連続して被接合物同士を真空中で接触させ接合を行う前期に記載の接合装置からなる。減圧プラズマ処理と接合を行うチャンバーを分割してハンドリングすることも可能であるが、図１や図５に示すように、同じチャンバー内で両被接合物を上下電極に対向保持し、プラズマ処理後、連続して接合することで、１チャンバーで済むのでコンパクト、コストダウンにつながり、また、接合が真空中であるのでボイドの噛み込みも防ぐことができる。
また、前期プラズマが交番電源を用いる方法からなる。また、前期プラズマが交番電源を用いる接合装置からなる。交番電源を用いることにより、プラスイオンとマイナス電子が交互に被接合物表面にあたるため、中和され、他のエネルギー波に比べチャージアップなどのダメージが少ない。そのため、半導体や各デバイスには好適である。
また、前記プラズマにより接合面を親水化処理し、仮接合する前述方法からなる。また、前記プラズマにより接合面を親水化処理し、仮接合する前記に記載の接合装置からなる。親水化処理による接合原理を図１０に示す。図１０[１]に示すように酸素プラズマによる親水化処理によりＳｉ表面にＯＨ基を付着させる。次に図１０[２]に示すように両被接合物を接触させ、水素結合により仮接合する。続いて図１０[３]に示すように加熱によりＨ^２０を放出させ、Ｓｉ−Ｏ−Ｓｉの強固な結合を得る。プラズマ処理により親水化処理して接合する方法がＳｉやガラス、ＳｉＯ^２、セラミック系を含む酸化物接合には簡易で有効である。表面にＯＨ基を生成し、両表面のＯＨ基により水素結合させて仮接合できる。強固に本接合するにはその後数時間の加熱が必要となるが、仮接合であれば瞬時に完結する。また、図８に示すような封止を伴う接合においても親水化処理した仮接合が界面に水を伴うので封止性に優れている。親水化処理には一般的に酸素プラズマや窒素プラズマが使用され、大気圧プラズマでも接合が可能である。強固に接合することはそれなりに条件出しが難しいが、仮接合レベルでいい場合は親水化処理による接合は比較的容易にでき仮接合には適している。
また、プラズマにより親水化処理時または処理後、Ｈ^２０またはＨ、ＯＨ基を含むガスを混入させた後、接合する前述方法からなる。また、水ガス発生手段を備え、プラズマにより親水化処理時または処理後、Ｈ^２０またはＨ、ＯＨ基を含むガスを混入させた後、接合する前記に記載の接合装置からなる。Ｈ^２０またはＨ、ＯＨ基を含むガスを水ガスとも呼ぶ。通常酸素プラズマにより処理し、大気中を搬送されると雰囲気中には水分が含まれるため、自然とＯＨ基が作られるが、不純物や有機物の付着を避けるために真空中で大気に暴露することなく接合まで進める場合には、水分が不足してＯＨ基が十分作られない場合が生じる。そのため、酸素プラズマ処理時または処理後接合までの間にＨ^２０またはＨ、ＯＨ基を含むガスを供給してやることが有効である。水ガスをそのまま供給することもできるが、水ガスを酸素に混入するか、酸素プラズマ処理後、連続して水ガスを反応ガスとしてプラズマ処理してやることで活性化し、より有効である。
また、前記プラズマによる親水化処理をエッチング力を高めた物理処理後、大気に暴露することなくエッチング力を弱めた化学処理を行う前述方法からなる。また、被接合物に対するエッチング力を切り替える減圧プラズマ処理手段を備え、前記プラズマによる親水化処理をエッチング力を高めた物理処理後、大気に暴露することなくエッチング力を弱めた化学処理を行う前記に記載の接合装置からなる。プラズマ処理による洗浄工程をプラズマ処理後半においてエッチング力を弱めてプラズマ処理を行うことにより、親水化処理がうまく行われる。通常のプラズマ処理においては物理処理により不純物を除去し、化学処理により表面にＯＨ基を付けて並べたり、窒素などの置換が行われるが、せっかく表面に化学処理されたものがエッチング力が強いので除去され、表面を均一に化学処理することは難しい。そこでプラズマ処理後半において、エッチング力を弱めてプラズマ処理することにより加速されないイオンやラジカルは多く存在するので化学反応は促進され接合表面に均一に化学処理を行い、表面活性化処理を行うことができる。そのため低温で接合強度を増すことができ、また、仮接合をしやすくできる。また、プラズマ処理後半とは時間的に半分とは限らず時間に関係しない意味を持つ。また、プラズマ処理前半と後半は間隔があっても良いが、連続された方が化学処理上好ましい。 The means of both the joining method and the joining apparatus according to the present invention for solving the above-described problems will be described collectively below. In order to solve the above-described problems, a bonding method and a bonding apparatus according to the present invention are a method of bonding a bonding surface between objects to be bonded using an energy wave that is an atomic beam, an ion beam, or plasma, and then bonding them. It comprises an energy wave irradiation means, a process or apparatus for temporary bonding at room temperature, and a method of separating the process or apparatus for main bonding by applying heat. In addition, in the method of bonding the surfaces of the objects to be bonded to each other after the surface activation treatment using an energy wave that is an atomic beam, an ion beam, or plasma, a method for activating the surface with an energy wave is provided. It consists of a joining device that separates the step of joining and the step of main joining by applying heat. The normal temperature refers to bonding at a temperature of 150 ° C. or lower, which allows bonding at a lower temperature, while typical solder capable of metal bonding at a low temperature can be bonded at 183 ° C., and is preferably room temperature. Conventional bonding methods that use an adhesive or diffusion bonding by high-temperature heating are known. The adhesive can be temporarily bonded, but cannot be used for bonding a fine structure such as MEMS or electrical bonding such as a semiconductor. In addition, there are many disadvantages such as weak adhesive strength, gas release, and moisture absorption. In addition, since the diffusion method is at a high temperature, there still remains a problem of heat resistance of the material and a problem that warpage occurs due to a difference in linear expansion coefficient between the dissimilar materials or the worst cracking occurs. However, these problems can be solved if the surface activation treatment is performed by energy waves and the surface activation can be directly bonded at room temperature. However, because it is at room temperature, the bonding strength does not increase unless the residual stress and strain due to the surface roughness and waviness of the mass-produced material are removed, so it can be used easily for temporary bonding. Therefore, it is necessary to increase the bonding strength by annealing for several hours, and if this is performed in one process or apparatus, the mass production efficiency decreases. Therefore, the mass production efficiency can be improved by separating the temporary joining step bonded at room temperature and the main joining step by heating and separating them as separate devices.
Moreover, it consists of the above-mentioned method which balances several this joining process or an apparatus with respect to the number 1 of temporary joining processes or an apparatus. Moreover, it consists of the joining apparatus as described above that balances a plurality of main joining steps with respect to the number of the temporary joining steps. Mass production efficiency can be further improved by balancing the line with a plurality of main joining devices for one temporary joining device. For example, when it takes 10 minutes for temporary joining and 1 hour for main joining, it is possible to join one piece in 10 minutes by arranging six main joining apparatuses on the temporary joining apparatus 1. In terms of cost, it is possible to overwhelmingly reduce the arrangement of six temporary joining devices and only six temporary joining devices that are simply heated rather than arranging six temporary binding integrated devices.
Further, in the method of joining three or more objects to be joined together, the above-described method is used in which the objects to be joined having the same linear expansion coefficient and the objects having different linear expansion coefficients are sandwiched from both sides. Further, in a method in which workpieces having different linear expansion coefficients are sandwiched from both sides with workpieces having the same linear expansion coefficient, voltage is applied from the central member to both end members in a method of anodic bonding by stacking three or more workpieces. It consists of a joining apparatus as described above which has a means to apply simultaneously. As shown in FIG. 8, in a high-frequency device and a MEMS device, there are a method of sealing one side and a method of sealing both sides, but the method of sealing one side as shown in FIG. Warpage occurs due to the difference in the coefficient of linear expansion of the material. As shown in Fig. 9 [2], warps are generated because workpieces with the same linear expansion coefficient and different linear expansion coefficients are sandwiched from both sides and then heated to cancel each other with opposing forces. No longer. However, in the conventional method, the only way to increase the bonding accuracy is to heat and bond one by one. This involves clamping with a jig in order to temporarily fix it without using an adhesive, but there is a problem that the position is shifted or there is no space for clamping. Therefore, if the method of temporary bonding at room temperature by surface activation is used, as shown in FIG. 9 [2], three or more members are sandwiched on both sides with a material having the same linear expansion coefficient, and the room temperature is temporarily bonded with high positional accuracy. After that, it is possible to perform high-precision bonding without warping by heating and main bonding. Of course, it is possible to increase the production efficiency by arranging a plurality of main joining devices with respect to the temporary joining device.
In addition, the temporary bonding is performed in the above-described method in which the temporary bonding is performed in a reduced-pressure chamber, under reduced pressure or in a gas replacement, and the main bonding is performed in the atmosphere. In addition, the temporary bonding step includes a decompression chamber, and the temporary joining is performed in the decompression chamber under reduced pressure or gas replacement, and the joining apparatus described above performs the main joining in the atmosphere. In a device in which the inside is sealed with a vacuum or an inert gas as shown in FIG. 8, if temporary bonding is performed in a reduced pressure atmosphere or a gas replacement atmosphere in a reduced pressure chamber, Because it is sealed with, air does not enter. In particular, when bonding is performed by a hydrophilization treatment, water is present at the interface, so that the sealing effect is also high. Therefore, this joining can be performed in the atmosphere, and cost reduction and efficiency improvement are achieved.
In addition, the above-described method in which the energy wave is plasma. Further, the energy wave is plasma, and includes the above-described bonding apparatus provided with plasma processing means. Further, if the energy wave is reduced pressure or atmospheric pressure plasma, it can be handled with a vacuum degree easier than other energy waves, and the cost can be reduced. Moreover, if it is atmospheric pressure plasma, it can be handled more easily. However, some bonding materials cannot be bonded without low-pressure plasma treatment, which is advantageous for bonding.
In addition, the plasma is a low-pressure plasma, and after the treatment, the above-described method is performed in which the objects to be bonded are continuously brought into contact with each other in a vacuum and bonded. In addition, the plasma is a low-pressure plasma, and includes a vacuum chamber that can be depressurized, a plasma generation unit, and a plasma reactive gas supply unit. It consists of the joining device described in the previous term. It is possible to divide and handle the chamber for bonding with the reduced pressure plasma treatment, but as shown in FIGS. 1 and 5, both the objects to be joined are held opposite to the upper and lower electrodes in the same chamber, and after the plasma treatment By joining continuously, only one chamber is required, which leads to compactness and cost reduction. Since joining is in a vacuum, it is possible to prevent biting of voids.
In addition, the initial plasma comprises a method using an alternating power source. In addition, the first plasma consists of a joining device using an alternating power source. By using an alternating power source, positive ions and negative electrons are alternately applied to the surface of the object to be joined, so that they are neutralized and less damaged such as charge-up than other energy waves. Therefore, it is suitable for semiconductors and devices.
Further, the method comprises the above-described method in which the bonding surface is hydrophilized with the plasma and temporarily bonded. Further, the joining apparatus according to the above, wherein the joining surface is hydrophilized with the plasma and temporarily joined. FIG. 10 shows the bonding principle by the hydrophilization treatment. As shown in FIG. 10 [1], OH groups are attached to the Si surface by a hydrophilization treatment using oxygen plasma. Next, as shown in FIG. 10 [2], both objects to be joined are brought into contact and temporarily joined by hydrogen bonding. Subsequently, as shown in FIG. 10 [3], H ² O is released by heating to obtain a strong bond of Si—O—Si. The method of joining by hydrophilization by plasma treatment is simple and effective for oxide joining including Si, glass, SiO ² and ceramics. OH groups are generated on the surfaces, and hydrogen bonding is performed with the OH groups on both surfaces, whereby temporary bonding can be performed. Heating for a few hours is necessary for strong main joining, but if it is temporary joining, it is completed instantaneously. Further, even in the joining with sealing as shown in FIG. 8, the temporary joining subjected to the hydrophilic treatment is accompanied with water at the interface, and thus the sealing performance is excellent. In general, oxygen plasma or nitrogen plasma is used for the hydrophilic treatment, and bonding is possible even by atmospheric pressure plasma. Although it is difficult to determine the conditions as it is to join firmly, if it is sufficient at the temporary bonding level, the bonding by the hydrophilization treatment is relatively easy and suitable for temporary bonding.
In addition, the above-described method is performed in which plasma is subjected to hydrophilization treatment or after treatment, and H ² O or a gas containing H and OH groups is mixed and then joined. Further, the apparatus comprises a joining apparatus as described above, which comprises water gas generating means and joins after mixing a gas containing H ² O or H, OH group during or after the hydrophilic treatment by plasma. A gas containing H ² O or H and OH groups is also called water gas. Normally treated with oxygen plasma and transported through the atmosphere, moisture is contained in the atmosphere, so OH groups are formed naturally, but exposure to the atmosphere in vacuum to avoid adhesion of impurities and organic matter In the case where the process proceeds to the joining, there is a case where water is insufficient and OH groups are not sufficiently formed. Therefore, it is effective to supply a gas containing H ² O or H and OH groups during the oxygen plasma treatment or before the joining after the treatment. The water gas can be supplied as it is, but it is more effective because it is activated by mixing the water gas into oxygen or by performing plasma treatment using the water gas as a reaction gas continuously after the oxygen plasma treatment.
In addition, the plasma hydrophilization treatment is performed after the physical treatment with an increased etching power, and then the chemical treatment with a reduced etching power is performed without exposure to the atmosphere. In addition, a low-pressure plasma processing means for switching the etching force on the object to be bonded is provided, and the hydrophilic treatment by the plasma is performed after the physical treatment with an increased etching power and the chemical treatment with a reduced etching power without being exposed to the atmosphere. It consists of a joining apparatus of description. The hydrophilic treatment is successfully performed by performing the plasma treatment by reducing the etching force in the latter half of the plasma treatment in the cleaning step by the plasma treatment. In normal plasma treatment, impurities are removed by physical treatment, OH groups are added to the surface by chemical treatment, and nitrogen is replaced. However, the chemical treatment on the surface has a strong etching power. It is difficult to uniformly remove and chemically treat the surface. Therefore, in the latter half of the plasma treatment, there are a lot of ions and radicals that are not accelerated by weakening the etching force and performing the plasma treatment, so the chemical reaction is promoted and the bonding surface can be uniformly subjected to the chemical treatment and the surface activation treatment can be performed. . Therefore, it is possible to increase the bonding strength at a low temperature and to facilitate temporary bonding. Further, the latter half of the plasma treatment is not necessarily half in time and has a meaning not related to time. Further, the first half and the second half of the plasma treatment may be spaced apart from each other, but it is preferable in terms of chemical treatment to be continuous.

また、前記エッチング力を切り替える減圧プラズマ処理手段が、プラズマ電極を被接合物保持電極と対向面電極の２箇所に切り替え可能に配置したものからなり、被接合物保持電極側に電源を印加してプラズマ処理を行い、次いで対向面電極側に電源を印加してエッチング力を弱めてプラズマ処理を行う前述方法及び接合装置からなる。プラズマ電極側では、電界が作られるためイオンが加速して衝突するのでエッチング力が増し、電極と対向面ではイオンは加速衝突しないのでエッチング力は低いが、加速されないイオンやラジカルは多く存在するので化学反応は促進される。プラズマ電極を被接合物保持電極と対向面電極の２箇所に切り替え可能に配置し、被接合物保持電極側に電源を印加してプラズマ処理を行い、次いで対向面電極側に電源を切り替えてエッチング力の弱いプラズマ処理を行うことにより、不純物を除去し、かつ、エッチング力を弱めることにより加速されないイオンやラジカルは多く存在するので化学反応は促進され接合表面に均一に表面活性化を行うことができる。そのため低温で接合強度を増すことができる。従来の被接合物保持電極のみにプラズマ電源を印加した場合と、被接合物保持電極と対向面電極を切り替え処理した場合の温度と接合強度の違いを図６に示す。ここでの接合強度は測定方法により倍近い強度を示す場合もあり、比較的低い強度データではあるが比較データとして用いる。従来方法では十分な強度を得るのに４００℃必要であったが、本方式では常温から２００℃以内で十分な接合強度を得ることができた。また、対向電極とは、平行平板型のように対向配置しても良いが、電極以外の周囲に配置しても同様な効果が表れる。また、スパッタエッチングによる電極材料の再付着を避けるためには、対向面より側面の方が好ましい。本文でいう対向面電極とはこれらの周囲の部位に電極を配置することも含む。 In addition, the low-pressure plasma processing means for switching the etching force is configured such that the plasma electrode can be switched to two positions of the bonded object holding electrode and the opposed surface electrode, and a power source is applied to the bonded object holding electrode side. It consists of the above-mentioned method and bonding apparatus which perform plasma treatment and then plasma treatment by applying power to the opposite surface electrode side to weaken the etching force. On the plasma electrode side, since the electric field is created, ions are accelerated and collide with each other, so the etching force increases. On the opposite surface of the electrode, ions do not collide with acceleration, so the etching force is low, but there are many ions and radicals that are not accelerated. The chemical reaction is accelerated. The plasma electrode is arranged so that it can be switched between two parts, the object holding electrode and the counter electrode, and plasma processing is performed by applying power to the object holding electrode, and then the power is switched to the counter electrode and etching is performed. By performing weak plasma treatment, impurities are removed, and there are many ions and radicals that are not accelerated by weakening the etching power, so the chemical reaction is promoted and the surface of the joint can be uniformly activated. it can. Therefore, the bonding strength can be increased at a low temperature. FIG. 6 shows the difference between the temperature and the bonding strength when the plasma power source is applied only to the conventional object-holding electrode and when the object-holding electrode and the counter electrode are switched. The bonding strength here may be nearly double the strength depending on the measurement method and is used as comparative data although it is relatively low strength data. In the conventional method, 400 ° C. is necessary to obtain sufficient strength, but in this method, sufficient bonding strength can be obtained within 200 ° C. from room temperature. In addition, the counter electrode may be arranged opposite to the parallel plate type, but the same effect can be obtained if it is arranged around other than the electrode. In order to avoid re-deposition of the electrode material due to sputter etching, the side surface is preferable to the facing surface. The term “opposite surface electrode” as used herein includes the placement of electrodes in the surrounding area.

また、前記エッチング力を切り替える減圧プラズマ処理手段が、Ｖｄｃが調整可能であるＲＦプラズマ電源からなり、プラズマ処理後半においてＶｄｃ値を変化させ、エッチング力を弱めてプラズマ処理を行う前述方法及び接合装置からなる。プラズマ電極側では、電界が作られるが、Ｖｄｃ値によりイオンが衝突する速度が変わる。例えば＋酸素イオンはＶｄｃ値が−である程加速されエッチング力は増加し、０に近づく程、速度は遅くなり、エッチング力は低下し、加速されないイオンやラジカルは多く存在するので化学反応は促進される。Ｖｄｃ値を−側に大きくしてプラズマ処理を行い、次いでＶｄｃ値を０に近づけ吸着工程を行うことにより、プラズマ処理後半に、エッチング力を弱めたプラズマ処理を行うことにより、不純物を除去し、かつ、エッチング力を弱めることにより加速されないイオンやラジカルは多く存在するので化学反応は促進され接合表面に均一に表面活性化を行うことができる。そのため低温で接合強度を増すことができる。接合結果も図６と同様な結果が得られた。 Further, the low-pressure plasma processing means for switching the etching force comprises an RF plasma power source capable of adjusting Vdc, and changes the Vdc value in the latter half of the plasma processing to weaken the etching power and perform the plasma processing. Become. On the plasma electrode side, an electric field is created, but the speed at which ions collide depends on the Vdc value. For example, + oxygen ions are accelerated and the etching power increases as the Vdc value is-, and as they approach 0, the speed decreases and the etching power decreases, and there are many ions and radicals that are not accelerated. Is done. The plasma treatment is performed by increasing the Vdc value to the-side, and then the adsorption process is performed by bringing the Vdc value close to 0, so that the impurities are removed by performing the plasma treatment with reduced etching power in the latter half of the plasma treatment. In addition, since there are many ions and radicals that are not accelerated by weakening the etching force, the chemical reaction is promoted and the surface of the joint can be uniformly activated. Therefore, the bonding strength can be increased at a low temperature. The result similar to FIG. 6 was obtained for the joining result.

また、前記エッチング力を切り替える減圧プラズマ処理手段が、パルス幅が調整可能であるパルス波プラズマ電源からなり、プラズマ処理後半においてパルス幅を変化させ、エッチング力を弱めてプラズマ処理を行う前述方法及び接合装置からなる。プラズマ電極側では、電界が作られるが、パルス幅を調整することにより＋イオンが衝突する−電界の時間と衝突が弱まる−電界が弱い時間との間隔を調整することができる。−電界の時間を多くすると＋イオンの衝突は強められ、−電界の時間を少なくすると＋イオンの衝突は弱められる。例えば＋酸素イオンは−電界の時間を長くする程加速されエッチング力は増加し、−電界の時間を短くする程速度は遅くなり、エッチング力は低下し、加速されないイオンやラジカルは多く存在するので化学反応は促進される。パルス幅を調整して−電界の時間を多くしてプラズマ処理を行い、次いで−電界の時間を短くしてプラズマ処理を行うことにより、エッチング力を強めた減圧プラズマ処理後、エッチング力を弱めた減圧プラズマ処理にて、不純物を除去し、かつ、エッチング力を弱めることにより加速されないイオンやラジカルは多く存在するので化学反応は促進され接合表面に均一に表面活性化を行うことができる。そのため低温で接合強度を増すことができる。接合結果も図６と同様な結果が得られた。 In addition, the low-pressure plasma processing means for switching the etching force comprises a pulse wave plasma power source whose pulse width can be adjusted, and changes the pulse width in the latter half of the plasma processing to weaken the etching power and perform the plasma processing. It consists of a device. On the plasma electrode side, an electric field is created, but by adjusting the pulse width, the interval between + ions collide, the electric field time is weakened, and the electric field is weak can be adjusted. -Increasing the time of the electric field increases + ion collision,-Reducing the electric field time decreases + ion collision. For example, + oxygen ions are accelerated and the etching power increases as the electric field time is lengthened, and the etching speed decreases and the etching power decreases as the electric field time is shortened, and there are many ions and radicals that are not accelerated. The chemical reaction is accelerated. By adjusting the pulse width-Plasma treatment was performed by increasing the electric field time, and then-Plasma treatment was performed by shortening the electric field time. Since there are many ions and radicals that are not accelerated by removing impurities and weakening the etching force in the low-pressure plasma treatment, the chemical reaction is promoted and the surface of the joint can be uniformly activated. Therefore, the bonding strength can be increased at a low temperature. The result similar to FIG. 6 was obtained for the joining result.

また、前記エッチング力を切り替える減圧プラズマ処理手段が、ＲＦプラズマと表面波プラズマを組み合わせて切り替える方法からなり、プラズマ処理前半はＲＦプラズマにより直接被接合物保持手段を電極として処理し、後半において表面波プラズマによるラジカルを発生させ、イオンをグリッド板でトラップして照射する前述方法からなる。また、ＲＦプラズマ発生手段と表面波プラズマ発生手段、イオントラップ板を備え、前記エッチング力を切り替える減圧プラズマ処理手段が、ＲＦプラズマと表面波プラズマを組み合わせて切り替える方法からなり、プラズマ処理前半はＲＦプラズマにより直接被接合物保持手段を電極として処理し、後半において表面波プラズマによるラジカルを発生させ、イオンをグリッド板でトラップして照射する前述接合装置からなる。エッチング力を高めて物理処理した後、エッチング力を弱めて科学処理するプラズマ手段としては、ＲＦプラズマと表面波プラズマを組み合わせて使用する方法が効果が高い。表面波プラズマはラジカルを多く生成するには適しており、アースに落としたグリッド上の穴あき板からなるイオントラップ板を通して被接合物にダウンフローしてやる方法がより好ましい。結果は図６におけるエッチング力切り替え手段と同等レベルを示し、酸素をＲＦプラズマで窒素を表面波プラズマに使用することでより接合条件は向上し好ましい。
また、前記物理処理をＡｒプラズマにより行い、化学処理を酸素プラズマにて行う前述方法からなる。また、前記物理処理をＡｒプラズマにより行い、化学処理を酸素プラズマにて行う前記に記載の接合装置からなる。エネルギー波により表面をエッチングし、付着物を除去し、基材の新生面が露出した状態で大気に暴露することなく、続いて酸素プラズマにより親水処理することで、有機物層を伴わない親水処理ができる。そのため、水素結合力による接合後の強度やアニーリング後の強度も弱い有機物層からの剥がれが無いため、拡散させなくとも水素結合後のＨ^２０を放出させるための低温でのアニーリングのみで十分な接合強度を得ることが可能となる。図６に示すように、従来の大気搬送後の酸素プラズマ処理で接合する方法では常温で３ＭＰａの接合強度で２００℃で６ＭＰａ、４００℃で９ＭＰａとなっている。これは大気搬送中に有機物が付着し、有機物層を含んだ接合面を含むため接合強度が上がらず、拡散によってのみ強度アップしている。しかし、真空中でＡｒエッチングによるドライ洗浄後、大気に暴露することなく引き続き酸素プラズマにより親水化処理されたものは、常温でも５ＭＰａの接合強度であり、２００℃で８ＭＰａと十分な接合強度を得ることができた。ちなみにＡｒイオンビーム処理後の高真空中での接合強度を測定すると常温で５ＭＰａ、４００℃加熱してもそのままと接合強度が従来方法以上に上がらないことが分かった。
また、前記エネルギー波によりエッチングする量は１ｎｍ以上である前述方法及び接合装置からなる。被接合物表面に存在する付着物はウェット洗浄後においても大気に暴露すると数秒で１ｎｍ以上付着することから少なくとも１ｎｍ以上エッチングすることが有効である。
また、前記本接合時に電圧を印加して陽極接合を行う前述方法からなる。また、加熱手段と電圧印加手段を備え、前記本接合時に電圧を印加して陽極接合を行う前記に記載の接合装置からなる。少なくとも一方の被接合物が電圧の印加によりイオンに分離する元素が混入された材料からなり、静電力により両被接合物を密着させるので接合や共有結合がし易くなる。両被接合物を接触させ、電圧を印加し、加熱して陽極接合を行う。一方がガラスである場合、加熱はガラスを軟化させ、相手側被接合物に隙間無く倣わせることができる。また、被接合物同士の平坦度、平面度が出ていれば軟化させる必要もなく常温でも接合強度はそれなりに上がるが、量産ベースの材料ではコスト面からもゴミとなる微小パーティクルや凹凸うねりも存在するため有効な方法である。
また、前記接合面がお互いに密着し合う面形状をしており、前記接合表面にパーティクルが１つ以上乗っており、本接合を陽極接合する前期に記載の方法からなる。また、前記接合面がお互いに密着し合う面形状をしており、前記接合表面にパーティクルが１つ以上乗っており、本接合を陽極接合する前期に記載の接合装置からなる。前述のように微小パーティクルを挟み込んでも陽極接合であれば加熱によるガラスの軟化や静電気力による密着で隙間なく接合することができる。また、前記本接合時に３００Ｍｐａ以下の加圧力で陽極接合する方法からなる。また、前記本接合時に３００Ｍｐａ以下の加圧力で加圧する加圧手段を備え、陽極接合する接合装置からなる。前述の常温接合においては材料が軟化していないので３００Ｍｐａ以上の加圧力が必要となるが、陽極接合による加熱と静電気力により３００Ｍｐａ以下での接合、例えば１００Ｍｐａで接合が可能となる。
また、少なくとも一方の被接合物がＳｉまたはＳｉＯ^２、ガラス、セラミック系を含む酸化物である前述方法からなる。また、少なくとも一方の被接合物がＳｉまたはＳｉＯ^２、ガラス、セラミック系を含む酸化物である前記に記載の接合装置からなる。従来の方法に記載したように、Ａｒイオンでのエッチングによる表面活性化方法は低温で接合できる方法であるが、表面の有機物や酸化膜除去して金属の電気的活性化された面を作りだし原子間力により接合するため、金属以外の半導体や特に酸化物の接合では強固な本接合は難しく、仮接合に適する。よって本発明は金属でないＳｉなどの半導体や、特に酸化物を含んだＳｉＯ^２、ガラス、セラミックに対して常温での仮接合性と加熱による本接合によりＳｉ−Ｏなどの共有結合がし易く接合強度も上がるため本発明方式が適する。
また、被接合物がウエハーまたはウエハーから切り出されたチップであり、請求項１〜９の方法で作られた半導体デバイスまたはＭＥＭＳデバイス。また、本方式が特に適する被接合物の形態は、被接合物がウエハーまたはウエハーから切り出されたチップである前述方法及び接合装置からなる。また、本方式にて作られた半導体装置であることからなる。半導体においてＳｉは基材として用いられるため本方式は特に適する。また、半導体とパッケージとの封止や接合においても絶縁体であるガラス、セラミック、ＳｉＯ^２は頻繁に用いられ有効である。形態としては半導体の製造工程であるウエハー上でハンドリングして張り合わせるとが一番有効であるが、ダイシング後のチップ状態でも適する。 Further, the low-pressure plasma processing means for switching the etching force comprises a method of switching by combining RF plasma and surface wave plasma. In the first half of the plasma treatment, the object holding means is directly treated by RF plasma as an electrode, and in the latter half the surface wave is treated. It consists of the above-mentioned method of generating radicals by plasma and trapping and irradiating ions with a grid plate. Further, the low-pressure plasma processing means that includes an RF plasma generation means, a surface wave plasma generation means, and an ion trap plate and switches the etching force in combination comprises a method of switching by combining RF plasma and surface wave plasma. The above-mentioned joining apparatus which directly treats the workpiece holding means as an electrode, generates radicals by surface wave plasma in the latter half, and traps and irradiates ions with a grid plate. As a plasma means for chemically processing after increasing the etching force and performing physical treatment, a method using a combination of RF plasma and surface wave plasma is highly effective. Surface wave plasma is suitable for generating a large amount of radicals, and a method of downflowing to an object to be bonded through an ion trap plate made of a perforated plate on a grid dropped to ground is more preferable. The result shows the same level as the etching force switching means in FIG. 6, and it is preferable to use oxygen for RF plasma and nitrogen for surface wave plasma because the bonding condition is improved.
The physical processing is performed by Ar plasma, and the chemical processing is performed by oxygen plasma. Further, the bonding apparatus according to the above, in which the physical treatment is performed by Ar plasma and the chemical treatment is performed by oxygen plasma. Etching the surface with energy waves, removing deposits, and exposing to the atmosphere with the new surface of the substrate exposed, and then hydrophilic treatment with oxygen plasma enables hydrophilic treatment without an organic layer . For this reason, there is no peeling from the organic layer after bonding due to hydrogen bonding strength and strength after annealing, so that annealing at low temperature is sufficient to release H ² O after hydrogen bonding without diffusion. Bonding strength can be obtained. As shown in FIG. 6, in the conventional method of joining by oxygen plasma treatment after air conveyance, the joining strength at room temperature is 3 MPa, and the joining strength is 200 ° C., 6 MPa, and 400 ° C., 9 MPa. This is because organic matter adheres to the air during transportation and includes a joining surface including an organic material layer, so that the joining strength does not increase and the strength is increased only by diffusion. However, after being dry-cleaned by Ar etching in vacuum and subsequently subjected to a hydrophilic treatment with oxygen plasma without exposure to the atmosphere, the bonding strength is 5 MPa even at room temperature, and a sufficient bonding strength of 8 MPa is obtained at 200 ° C. I was able to. Incidentally, when the bonding strength in a high vacuum after the Ar ion beam treatment was measured, it was found that the bonding strength did not increase more than the conventional method as it was even when heated at room temperature at 5 MPa and 400 ° C.
The amount of etching by the energy wave is the above-described method and bonding apparatus in which the amount is 1 nm or more. It is effective to etch at least 1 nm since the deposits present on the surface of the object to be bonded are deposited to 1 nm or more in several seconds when exposed to the atmosphere even after wet cleaning.
In addition, the method includes the above-described method in which voltage is applied during the main bonding to perform anodic bonding. In addition, the bonding apparatus includes the heating unit and the voltage application unit, and applies a voltage during the main bonding to perform anodic bonding. At least one of the objects to be bonded is made of a material mixed with an element that separates into ions when a voltage is applied, and both objects to be bonded are brought into close contact with each other by an electrostatic force, so that bonding and covalent bonding are facilitated. Both objects to be bonded are brought into contact, a voltage is applied, and heating is performed to perform anodic bonding. When one is glass, the heating softens the glass and can follow the mating object without gap. In addition, if the flatness and flatness of the objects to be joined are obtained, there is no need to soften the joint, and the joint strength will increase even at room temperature. It is an effective method because it exists.
In addition, the bonding surface has a surface shape in which the bonding surfaces are in close contact with each other, and one or more particles are on the bonding surface. In addition, the bonding surface has a shape in which the bonding surfaces are in close contact with each other, and one or more particles are on the bonding surface, and includes the bonding apparatus described in the previous period for anodic bonding of the main bonding. As described above, even if fine particles are sandwiched, if anodic bonding is used, bonding can be performed without gaps by softening of glass by heating or adhesion by electrostatic force. Further, it comprises a method of anodic bonding with a pressing force of 300 Mpa or less during the main bonding. In addition, it comprises a joining device for anodic joining, comprising a pressurizing means for pressurizing with a pressing force of 300 Mpa or less during the main joining. In the above-mentioned room temperature bonding, since the material is not softened, a pressure of 300 Mpa or more is required. However, it is possible to bond at 300 Mpa or less, for example, 100 Mpa by heating by anodic bonding and electrostatic force.
Further, at least one of the objects to be bonded is formed by the above-described method, which is an oxide containing Si, SiO ² , glass, or ceramic. Moreover, at least one to-be-joined object consists of a joining apparatus as described in the above, which is an oxide containing Si, SiO ² , glass, or a ceramic system. As described in the conventional method, the surface activation method by etching with Ar ions is a method that can be bonded at a low temperature. However, an organically activated surface of a metal is created by removing organic substances and oxide film on the surface to form atoms. Since bonding is performed by an interstitial force, strong main bonding is difficult in the bonding of semiconductors other than metals and particularly oxides, and is suitable for temporary bonding. Therefore, the present invention makes it easy to form a covalent bond such as Si—O by temporary bonding at room temperature and main bonding by heating to a semiconductor such as Si that is not a metal, especially SiO ² , glass, or ceramic containing an oxide. Since the strength increases, the method of the present invention is suitable.
The semiconductor device or MEMS device manufactured by the method according to claim 1, wherein the object to be bonded is a wafer or a chip cut out from the wafer. Moreover, the form of the object to be bonded is particularly suitable for the method and the bonding apparatus described above, in which the object is a wafer or a chip cut out from the wafer. In addition, the semiconductor device is manufactured by this method. This method is particularly suitable because Si is used as a base material in semiconductors. Further, glass, ceramic, and SiO ² that are insulators are frequently used and effective in sealing and bonding between a semiconductor and a package. As a form, it is most effective to handle and bond on a wafer, which is a semiconductor manufacturing process, but it is also suitable in a chip state after dicing.

被接合物同士の接合面を原子ビーム、イオンビームまたはプラズマであるエネルギー波により処理した後、接合する方法において、常温のもと仮接合する工程または装置と、加熱を加えて本接合する工程または装置を分離することで、生産効率をアップさせたり、３枚以上の積層構造によりそりを発生しない構成が可能となる。 In the method of bonding after bonding surfaces of objects to be bonded with an energy wave that is an atomic beam, an ion beam or plasma, a process or apparatus for temporary bonding at room temperature and a process of performing main bonding by heating or By separating the apparatus, it is possible to increase the production efficiency and to prevent the warp from being generated by the laminated structure of three or more sheets.

以下に本発明の望ましい実施の形態について、図面を参照して説明する。図７に示すように本発明の一実施形態としてとして構成を示す。エネルギー波処理としてプラズマ処理装置〔１〕で接合表面を表面活性化し、真空中での常温仮接合を、仮接合装置〔２〕で行い、大気中での加熱本接合を本接合装置〔３〕を複数台でバランスさせて生産効率を上げている。また、プラズマ処理装置〔１〕と仮接合装置〔２〕は同一装置でも構成できる。図２にプラズマ処理装置〔１〕と仮接合装置〔２〕を同一装置とした本発明の一実施形態に係るガラスとＳｉのウエハーを仮接合する仮接合装置を示す。
この実施形態では、被接合物であるウエハーを上下に対向して保持させた状態でチャンバーを閉じ、真空内で場合によってはＡｒプラズマによる不純物エッチング後、酸素プラズマにより親水化処理後、仮接合させ、場合によっては１５０℃以内の加熱により強度アップさせる装置である。装置構成は、上ウエハー７を保持し、Ｚ軸１により昇降制御と加圧制御を行うヘッド部と、下ウエハー８を保持し、場合によってはウエハーをアライメントするステージ部に分けられる。Ｚ軸１には圧力検出手段が組み込まれ、Ｚ軸サーボモータのトルク制御へフィードバックすることで加圧力制御を行う。別途アクチュエータにより昇降可能なチャンバー壁３が下降し、チャンバー台１０に固定パッキン５を介して接地した状態で真空に引き、反応ガスを導入してプラズマ処理を行い、ヘッド部が下降して両ウエハーを接合する構成となっている。また、場合によっては上部電極６、下部電極７は加熱ヒータも備えており、接合時に低温で加熱することもできる。 Preferred embodiments of the present invention will be described below with reference to the drawings. As shown in FIG. 7, the configuration is shown as an embodiment of the present invention. As the energy wave treatment, the surface of the bonding is activated by the plasma processing apparatus [1], the room temperature temporary bonding in vacuum is performed by the temporary bonding apparatus [2], and the heating main bonding in the atmosphere is performed by the main bonding apparatus [3]. The production efficiency is improved by balancing multiple units. Further, the plasma processing apparatus [1] and the temporary bonding apparatus [2] can be configured by the same apparatus. FIG. 2 shows a temporary bonding apparatus for temporarily bonding a glass and a Si wafer according to an embodiment of the present invention in which the plasma processing apparatus [1] and the temporary bonding apparatus [2] are the same apparatus.
In this embodiment, the chamber is closed in a state where the wafer as the object to be bonded is held facing up and down, and after vacuum etching in some cases with Ar plasma, after hydrophilic treatment with oxygen plasma, and temporarily bonded. In some cases, the strength is increased by heating within 150 ° C. The apparatus configuration is divided into a head unit that holds the upper wafer 7 and performs elevation control and pressurization control by the Z axis 1, and a stage unit that holds the lower wafer 8 and in some cases aligns the wafer. A pressure detection means is incorporated in the Z-axis 1 and feedback control is performed by feeding back to the torque control of the Z-axis servomotor. Separately, the chamber wall 3 that can be moved up and down by an actuator is lowered, vacuumed in a state of being grounded to the chamber base 10 through the fixed packing 5, and plasma treatment is performed by introducing a reactive gas, and the head portion is lowered to both wafers. It becomes the composition which joins. In some cases, the upper electrode 6 and the lower electrode 7 are also provided with a heater, and can be heated at a low temperature during bonding.

図２に示すように動作を順を追って説明すると、[１]のようにチャンバー壁３が上昇した状態で上ウエハー７を上部電極６に保持させる。続いて下ウエハー８を下部電極９に保持させる。保持させる方法はメカニカルなチャッキング方式もあるが、静電チャック方式が望ましい。続いて[２]に示すようにチャンバー壁３を下降させ、チャンバー台１０に固定パッキン５を介して接地させる。チャンバー壁３はシュウドウパッキン４により大気と遮断されているので、吸入バルブ１３を閉止した状態で排出バルブ１４を空け、真空ポンプ１５により真空引きを行うことでチャンバー内の真空度を高めることができる。次に[３]に示すようにチャンバー内を反応ガスで満たす。真空ポンプ１５は動作させながら排出バルブ１４の排出量と吸入バルブ１３でのガス吸入量をコントロールすることである一定の真空度に保ちながら反応ガスで満たすことが可能である。[４]、[５]に示すように、本方式では、Ａｒプラズマによる不純物エッチング場合には、まずＡｒガスを充満させ、１０^−２Torr程度の真空度で下部電極９に交番電源プラズマ電圧を印加することでプラズマを発生させ、下部ウエハー８表面をＡｒエッチングにより洗浄する。続いて、上部電極６に同様な交番電源を印加することで上部ウエハーをＡｒエッチングにより洗浄する。次に[２]のようにチャンバー内を真空に引きＡｒを排出する。場合によっては両電極を１００℃程度に加熱しながら真空引きを行うことにより表面に付着したり部材内部に打ち込まれたＡｒを排出する。次に[３]、[４]、[５]動作をＡｒに替わって酸素ガスを供給することで表面を酸素プラズマ処理する。 The operation will be described in order as shown in FIG. 2. The upper wafer 7 is held by the upper electrode 6 with the chamber wall 3 raised as shown in [1]. Subsequently, the lower wafer 8 is held on the lower electrode 9. The holding method includes a mechanical chucking method, but an electrostatic chuck method is desirable. Subsequently, as shown in [2], the chamber wall 3 is lowered, and the chamber base 10 is grounded via the fixed packing 5. Since the chamber wall 3 is shielded from the atmosphere by the powder packing 4, the exhaust valve 14 is opened with the suction valve 13 closed, and the vacuum pump 15 is evacuated to increase the degree of vacuum in the chamber. it can. Next, as shown in [3], the chamber is filled with the reaction gas. The vacuum pump 15 can be filled with the reaction gas while maintaining a certain degree of vacuum by controlling the discharge amount of the discharge valve 14 and the gas suction amount of the suction valve 13 while operating. As shown in [4] and [5], in this method, in the case of impurity etching by Ar plasma, first, Ar gas is filled, and an alternating power source plasma voltage is applied to the lower electrode 9 at a degree of vacuum of about 10 ⁻² Torr. When applied, plasma is generated, and the surface of the lower wafer 8 is cleaned by Ar etching. Subsequently, a similar alternating power supply is applied to the upper electrode 6 to clean the upper wafer by Ar etching. Next, as in [2], the chamber is evacuated and Ar is discharged. In some cases, vacuuming is performed while heating both electrodes to about 100 ° C., whereby Ar adhering to the surface or being driven into the member is discharged. Next, [3], [4], [5] The surface is subjected to oxygen plasma treatment by supplying oxygen gas instead of Ar.

Ａｒと酸素の２ガスを１チャンバーで切り替える方法はガス切替弁１６にてＡｒと酸素ガスを選択して供給することができる。まずＡｒを選択して充填した後、吸入バルブ１３を閉じてチャンバー内を真空引きしＡｒを排出した後、ガス切替弁１６にて酸素ガスに切り替え、吸入バルブ１３を開き、チャンバー内を酸素ガスで充満させる。また、このガス切替弁１６は大気を吸入させることもできるのでチャンバーを開く時に大気解放させることもできる。 A method of switching between two gases of Ar and oxygen in one chamber can select and supply Ar and oxygen gas by the gas switching valve 16. First, after selecting and filling Ar, the suction valve 13 is closed and the inside of the chamber is evacuated to discharge Ar, then the gas switching valve 16 is switched to oxygen gas, the suction valve 13 is opened, and the chamber is filled with oxygen gas. Fill with. Further, since the gas switching valve 16 can inhale the atmosphere, it can be released to the atmosphere when the chamber is opened.

次に、水ガスを供給し、場合によっては反応ガスとしてプラズマ処理し、表面を親水化処理する。続いて、[６]に示すように、真空中でチャンバー壁３とシュウドウパッキン４で接しながらピストン型ヘッド２がＺ軸１により下降され、両ウエハーを真空中で接触させ、水素結合力により仮接合させる。チャンバー内はチャンバー壁３とピストン型ヘッド２との間のシュウドウパッキン４により外部雰囲気と遮断され、真空に保持された状態でピストン型ヘッド部が下降することができる。また、場合によっては同時に両電極に仕込まれたヒータにより１５０℃以内に加熱し、強度アップを行う。その後、[７]に示すようにチャンバー内に大気を供給し大気圧に戻して、ヘッド部を上昇させ、接合された両ウエハーを取り出す。 Next, water gas is supplied, and in some cases, plasma treatment is performed as a reaction gas, and the surface is hydrophilized. Subsequently, as shown in [6], the piston-type head 2 is lowered by the Z-axis 1 while contacting the chamber wall 3 and the powder packing 4 in a vacuum, and both wafers are brought into contact with each other in a vacuum. Temporary joining. The inside of the chamber is shielded from the external atmosphere by the powder packing 4 between the chamber wall 3 and the piston type head 2, and the piston type head portion can be lowered while being kept in a vacuum. In some cases, the strength is increased by heating within 150 ° C. with heaters charged to both electrodes at the same time. Thereafter, as shown in [7], air is supplied into the chamber to return to atmospheric pressure, the head is raised, and both bonded wafers are taken out.

また、場合によっては、接合に際し、両ウエハーの位置をアライメントした後、接合する場合もある。図３に真空引きする前にアライメントする方法を示す。上ウエハー７にはアライメント用の上マーク２３が２箇所に付けられ、下ウエハー８にはアライメント用の下マーク２４が同様な位置２箇所に付けられている。両ウエハーの間に２視野認識手段２５を挿入し、上下のマーク位置を認識手段で読み取る。２視野の認識手段２５は上下のマーク像をプリズム２６により分岐し、上マーク認識手段２７と下マーク認識手段２８に分離して読み取る。２視野認識手段２５はＸＹ軸と場合によってはＺ軸を持ったテーブルで移動され、任意の位置のマークを読み取ることができる。その後、アライメントテーブル２０により下ウエハー８の位置を上ウエハー７の位置に補正移動させる。移動後、再度２視野認識手段２５を挿入して繰り返して補正し、精度を上げることも可能である。 In some cases, bonding may be performed after aligning the positions of both wafers. FIG. 3 shows a method of alignment before evacuation. An upper mark 23 for alignment is attached to the upper wafer 7 at two places, and a lower mark 24 for alignment is attached to the lower wafer 8 at two similar positions. A two-field recognition means 25 is inserted between both wafers, and the upper and lower mark positions are read by the recognition means. The two-field recognition means 25 branches the upper and lower mark images by a prism 26 and separates them into an upper mark recognition means 27 and a lower mark recognition means 28 and reads them. The two-field recognition means 25 is moved by a table having an XY axis and possibly a Z axis, and can read a mark at an arbitrary position. Thereafter, the position of the lower wafer 8 is corrected and moved to the position of the upper wafer 7 by the alignment table 20. After the movement, it is possible to increase the accuracy by inserting the two-field recognition means 25 again and correcting it repeatedly.

図４に真空引きした後の接合する前にでもアライメントできる方法を示す。高精度に両被接合物をアライメントする必要がある場合には、プラズマ処理する工程の後、アライメントしてやる必要がある。これは、プラズマ処理の発熱により、被接合物や被接合物保持手段が熱膨張により位置ずれを起こすためであり、プラズマ処理後に両被接合物の位置を認識手段により認識してアライメントすることで位置ずれ無く数μｍ以内の高精度な接合が可能となる。アライメントのための被接合物を平行移動及び／又は回転移動させる手段は真空チャンバー内に設けることが精度上好ましく、両被接合物の位置を認識する認識手段となる光学系や撮像素子はチャンバーにガラス窓を設けることによりチャンバー外に設けることが好ましい。光学系や撮像素子は真空中で使用できないものが多く、精度を維持するためには外部大気中に設置することが好ましい。また、アライメントのための移動手段は外部からの操作では微少な移動を行うことは難しく、高精度を出すためにはチャンバー内に設けることが好ましい。また、プラズマ処理工程とアライメント工程及び／または仮接合工程を個別のチャンバーで行い、クラスター構造として真空中の搬送手段でつなげることも可能ではあるが、複雑で高価な装置となってしまう。これを図１に示すような装置構成で、かつ、図４に示すようなアライメント方法を用いることで１つのチャンバーで連続して行うことが可能となり、装置の簡易化コストダウンが可能となる。また、連続して行うことで付着物を最小限に押さえることができる。上ウエハー７にはアライメント用の上マーク２３が２箇所に付けられ、下ウエハー８にはアライメント用の下マーク２４が２箇所に付けられている。上下マークは重なっても同視野で認識できるような形状となっている。プラズマ処理後の両ウエハーを近接させ、マーク読みとり用透過部１９とガラス窓２１を透過してＩＲ認識手段２２により下ウエハーを透過して金属でつけられた上下のアライメントマークを同時に認識して位置を読み取る。焦点深度が合わない場合は、ＩＲ認識手段２２を上下移動させて読み取る場合もある。ＩＲ認識手段２２はＸＹ軸と場合によってはＺ軸を持ったテーブルで移動され任意の位置のマークを読み取ることができるようにしても良い。その後、アライメントテーブル２０により下ウエハー８の位置を上ウエハー７の位置に補正移動させる。移動後、再度ＩＲ認識手段２２により繰り返して補正し、精度を上げることも可能である。ＩＲ認識方式はＳｉ同士の接合にも使用できる。また、ガラスを下にＳｉを上に保持した場合は、可視光でもアライメントが可能である。 FIG. 4 shows a method that allows alignment even after joining after evacuation. When it is necessary to align both objects to be bonded with high accuracy, it is necessary to perform alignment after the plasma processing step. This is because the object to be bonded and the object to be bonded holding means are displaced due to thermal expansion due to the heat generated by the plasma processing. After the plasma processing, the positions of both objects to be bonded are recognized and aligned by the recognition means. High-precision bonding within a few μm is possible without displacement. It is preferable in terms of accuracy that the means for parallel and / or rotational movement of the objects to be joined for alignment is provided in the vacuum chamber. A glass window is preferably provided outside the chamber. Many optical systems and image sensors cannot be used in a vacuum, and it is preferable to install them in the external atmosphere in order to maintain accuracy. Further, it is difficult to move the moving means for alignment by a small amount of operation from the outside, and it is preferable to provide the moving means in the chamber in order to obtain high accuracy. In addition, the plasma processing step, the alignment step, and / or the temporary bonding step can be performed in separate chambers and connected as a cluster structure by a conveying means in a vacuum, but the apparatus becomes complicated and expensive. This can be performed continuously in one chamber by using the apparatus configuration as shown in FIG. 1 and the alignment method as shown in FIG. 4, thereby simplifying the apparatus and reducing the cost. In addition, the deposits can be minimized by performing continuously. The upper wafer 7 is provided with two upper marks 23 for alignment, and the lower wafer 8 is provided with two lower marks 24 for alignment. The top and bottom marks are shaped so that they can be recognized in the same field of view even if they overlap. Both wafers after the plasma treatment are brought close to each other, passed through the mark reading transmission part 19 and the glass window 21 and passed through the lower wafer by the IR recognition means 22 to simultaneously recognize the upper and lower alignment marks attached with metal. Read. If the depth of focus does not match, the IR recognition means 22 may be moved up and down for reading. The IR recognizing means 22 may be moved by a table having an XY axis and possibly a Z axis so that a mark at an arbitrary position can be read. Thereafter, the position of the lower wafer 8 is corrected and moved to the position of the upper wafer 7 by the alignment table 20. After the movement, it is possible to repeat the correction by the IR recognizing means 22 again to increase the accuracy. The IR recognition method can also be used for bonding Si. In addition, when glass is held down and Si is held up, alignment is possible even with visible light.

酸素プラズマ処理後、Ｈ^２０またはＨ、ＯＨ基を含むガスに置換した後接合する方法として、水ガスが容易であるが、Ｈ^２０分子ビーム、水素ガスなども用いることができる。 After the oxygen plasma treatment, water gas is easy as a method of joining after replacing with gas containing H ² O or H, OH group, but H ² molecular beam, hydrogen gas, or the like can also be used.

Ａｒプラズマにてエッチングすることが効率上好ましいが、窒素、酸素など他のガスでエッチングすることも可能であり、本発明に含む。 Etching with Ar plasma is preferable in terms of efficiency, but etching with other gases such as nitrogen and oxygen is also possible and is included in the present invention.

ＩＲ認識手段にてマークを読み取る構成において、マーク読みとり用透過部１９やガラス窓２１、アライメントテーブル間の空間などにおけるＩＲ光源の通り道は、空間やガラスに限らず、ＩＲ光を透過する材質で構成されてあれば良い。また、反射光のみならずＩＲ（赤外）認識手段の反対側に光源を用いて透過光としても良い。 In the configuration of reading the mark by the IR recognition means, the path of the IR light source in the space between the mark reading transmission part 19, the glass window 21, and the alignment table is not limited to the space and glass, but is made of a material that transmits IR light. It only has to be done. Further, not only the reflected light but also a light source on the opposite side of the IR (infrared) recognition means may be used as the transmitted light.

プラズマ処理する方法として交番電極面のウエハーを洗浄するのが効率上好ましいが、均一性やダメージ軽減から電極をウエハー以外の場所に設置しウエハーを洗浄する場合もある。 Although it is preferable from the viewpoint of efficiency to clean the wafer on the alternating electrode surface as a plasma processing method, there are cases where the wafer is cleaned by setting the electrode in a place other than the wafer in order to reduce uniformity and damage.

次にプラズマ処理をウエハーを対向配置した位置で行わず、スライドさせた位置で行う仮接合装置を図５に示す。スライドさせた位置でプラズマ処理することで、エッチングされた物質が対向ウエハーへ再付着することを防止したり、ウエハーと対向した面を電極とすることでエッチング力を弱めて化学処理を増進させＯＨ基を付着しやすくすることができる。プラズマ処理後は下部ステージが上部ウエハーと対向する位置までスライドし、前述同様な接合処理を行う。 Next, FIG. 5 shows a temporary bonding apparatus in which the plasma processing is not performed at the position where the wafers are opposed to each other but is performed at the slid position. Plasma treatment at the slid position prevents the etched material from re-adhering to the opposing wafer, or the surface facing the wafer is used as an electrode to weaken the etching force and increase chemical treatment. The group can be easily attached. After the plasma processing, the lower stage slides to a position facing the upper wafer, and the same bonding process as described above is performed.

また、エネルギー波処理がプラズマ以外のイオンビームや原子ビームである場合には図５の装置にビーム照射装置を２つ取り付けて、スライドさせた位置で斜めからウエハー表面に個別に照射させればいい。 If the energy wave treatment is an ion beam other than plasma or an atomic beam, two beam irradiation devices may be attached to the apparatus shown in FIG. 5, and the wafer surface may be individually irradiated obliquely at the slid position. .

前述の仮接合装置は、もちろん、プラズマなどエネルギー波処理を専用装置で行い、エネルギー波処理を除いた仮接合装置として使用することもできる。
次に本接合装置について説明する。本接合装置はすでに仮接合装置において、真空封止やガス封入された状態であるので、大気中で加熱するだけの簡易な装置でもよい。場合によっては陽極接合装置として電圧を印加して加熱によりガラスを軟化させ、ゴミの噛み込みや材料の凹凸、うねりによる隙間を埋めて接合面積を上げて強度アップさせることができる。この簡易な本接合装置を図７に示すように複数台並べることで生産効率をアップさせ、コストダウンをはかることができる。
図９〔２〕に示すように３つ以上の部材を両側を線膨張係数の等しい材料で挟み込んで位置精度をだして常温仮接合させた後、加熱して本接合することでそりなく高精度に接合することができる。
また、プラズマ処理工程をプラズマ処理後半においてエッチング力を弱めてプラズマ処理を行うことにより、親水化処理がうまく行われる。通常のプラズマ処理においては物理処理により不純物を除去し、化学処理により表面にＯＨ基を付けて並べたり、窒素などの置換が行われるが、せっかく表面に化学処理されたものがエッチング力が強いので除去され、表面を均一に化学処理することは難しい。そこでプラズマ処理後半において、エッチング力を弱めてプラズマ処理することにより加速されないイオンやラジカルは多く存在するので化学反応は促進され接合表面に均一に化学処理を行い、表面活性化処理を行うことができる。そのため低温で接合強度を増すことができ、また、仮接合をしやすくできる。エッチング力を切り替える方法はプラズマのＶｄｃ値を切り替えたり、パルス幅を切り替えたり、ウエハーと対向面を電極にしたり、ＲＦプラズマと表面波プラズマを切り替えたりすることで行える。 Of course, the above-described temporary bonding apparatus can also be used as a temporary bonding apparatus in which energy wave processing such as plasma is performed by a dedicated apparatus and energy wave processing is excluded.
Next, the present bonding apparatus will be described. Since the present bonding apparatus is already in the state of being vacuum-sealed or gas-filled in the temporary bonding apparatus, it may be a simple apparatus that only heats in the atmosphere. In some cases, the glass can be softened by heating by applying a voltage as an anodic bonding apparatus, filling gaps due to the biting of dust, material irregularities, and undulations to increase the bonding area and increase the strength. By arranging a plurality of such simple joining devices as shown in FIG. 7, the production efficiency can be improved and the cost can be reduced.
As shown in Fig. 9 [2], three or more members are sandwiched on both sides with a material having the same linear expansion coefficient, and are subjected to positional accuracy and temporarily joined at room temperature, and then heated and fully joined to provide high accuracy without warping. Can be joined.
In addition, the hydrophilic treatment can be successfully performed by performing the plasma treatment by reducing the etching power in the latter half of the plasma treatment. In normal plasma treatment, impurities are removed by physical treatment, OH groups are added to the surface by chemical treatment, and nitrogen is replaced. However, the chemical treatment on the surface has a strong etching power. It is difficult to uniformly remove and chemically treat the surface. Therefore, in the latter half of the plasma treatment, there are a lot of ions and radicals that are not accelerated by weakening the etching force and performing the plasma treatment, so the chemical reaction is promoted and the bonding surface can be uniformly subjected to the chemical treatment and the surface activation treatment can be performed. . Therefore, it is possible to increase the bonding strength at a low temperature and to facilitate temporary bonding. The etching force can be switched by switching the plasma Vdc value, switching the pulse width, using the wafer and the opposite surface as an electrode, or switching between RF plasma and surface wave plasma.

本発明の一実施態様に係る仮接合装置の概略構成図である。It is a schematic block diagram of the temporary joining apparatus which concerns on one embodiment of this invention. 実際の仮接合課程を示すフロー図である。It is a flowchart which shows the actual temporary joining process. ２視野認識手段を用いた大気中でのアライメント構成図である。It is an alignment block diagram in the air | atmosphere using 2 visual field recognition means. ＩＲ認識手段を用いた真空中でのアライメント構成図である。It is the alignment block diagram in the vacuum which used IR recognition means. ステージスライド式仮接合装置図である。It is a stage slide type temporary joining apparatus figure. 接合の比較グラフである。It is a comparison graph of joining. 仮、本接合装置を効率よく構成した図である。It is the figure which comprised the temporary joining apparatus efficiently. 封止を伴うデバイス図である。It is a device figure with sealing. 加熱によるそりを示す図である。It is a figure which shows the curvature | sledge by heating. 親水化処理による接合化学式を示す図である。It is a figure which shows the joining chemical formula by a hydrophilic treatment. マスクアライナーを用いた従来の接合方式図である。It is a conventional bonding method diagram using a mask aligner.

Explanation of symbols

１Ｚ軸
２ピストン型ヘッド
３チャンバー壁
４シュウドウパッキン
５固定パッキン
６上部電極
７上ウエハー
８下ウエハー
９下部電極
１０チャンバー台
１１吸入口
１２排出口
１３吸入バルブ
１４排出バルブ
１５真空ポンプ
１６ガス切替弁
１７ガスＡ
１８ガスＢ
１９マーク読みとり用透過部
２０アライメントテーブル
２１ガラス窓
２２ＩＲ認識手段
２３上マーク
２４下マーク
２５２視野認識手段
２６プリズム
２７上マーク認識手段
２８下マーク認識手段
１００ガラス
１０１シリコン
１０２アライメントステージ
１０３ガラス保持手段
１０４顕微鏡
２０１トルク制御式昇降駆動モータ
２０２Ｚ軸昇降機構
２０３ θ軸回転機構
２０４圧力検出手段
２０５ベローズ
２０６ＸＹアライメントテーブル
２０７ヘッド
２０８ステージ
２０９下ウエハー
２１０上ウエハー
２１１真空チャンバー
２１２ヘッド側認識手段
２１３ステージ側認識手段
２１４ガラス窓
２１５排気管
２１６排気弁
２１７真空ポンプ
２１８吸気管
２１９吸気弁
２２０吸入ガス切り替え弁
２２１Ａｒ
２２２Ｏ２
２２３大気
２２７上アライメントマーク
２２８下アライメントマーク
２２９スライド移動手段 DESCRIPTION OF SYMBOLS 1 Z-axis 2 Piston type head 3 Chamber wall 4 Powder packing 5 Fixed packing 6 Upper electrode 7 Upper wafer 8 Lower wafer 9 Lower electrode 10 Chamber base 11 Inlet 12 Outlet 13 Inlet valve 14 Outlet valve 15 Vacuum pump 16 Gas switch Valve 17 Gas A
18 Gas B
19 Mark reading transmission part 20 Alignment table 21 Glass window 22 IR recognition means 23 Upper mark 24 Lower mark 25 Two-field recognition means 26 Prism 27 Upper mark recognition means 28 Lower mark recognition means 100 Glass 101 Silicon 102 Alignment stage 103 Glass holding means 104 Microscope 201 Torque control type lift drive motor 202 Z axis lift mechanism 203 θ axis rotation mechanism 204 Pressure detection means 205 Bellows 206 XY alignment table 207 Head 208 Stage 209 Lower wafer 210 Upper wafer 211 Vacuum chamber 212 Head side recognition means 213 Stage side Recognizing means 214 Glass window 215 Exhaust pipe 216 Exhaust valve 217 Vacuum pump 218 Intake pipe 219 Intake valve 220 Intake gas switching valve 221 Ar
222 O2
223 Atmosphere 227 Upper alignment mark 228 Lower alignment mark 229 Slide moving means

Claims

In the method of joining after joining the surfaces of the objects to be joined by surface activation treatment with an energy wave that is an atomic beam, ion beam or plasma, in the method of joining, a process or apparatus for temporary joining at room temperature and the main joining with heating A method of separating a process or device to be performed.

The method according to claim 1, wherein a plurality of main bonding processes or apparatuses are balanced against the number of temporary bonding processes or apparatuses.

The method according to claim 1 or 2, wherein in the method of joining three or more objects to be joined together, the objects to be joined having the same linear expansion coefficient and the objects having different linear expansion coefficients are sandwiched from both sides.

The method according to claim 1, wherein the temporary bonding is performed in a reduced pressure chamber, under reduced pressure or in a gas-replaced state, and the main bonding is performed in the atmosphere.

The method according to claim 1, wherein the energy wave is plasma.

The method according to claim 5, wherein the plasma is a low-pressure plasma, and after the treatment, the objects to be joined are continuously brought into contact with each other in vacuum in the same chamber to perform bonding.

The method according to claim 5 or 6, wherein the bonding surface is hydrophilized by the plasma and temporarily bonded.

The method according to claim 7, wherein bonding is performed after mixing a gas containing H ² O or H and OH groups during or after the hydrophilic treatment by plasma.

The method according to claim 7 or 8, wherein the plasma treatment is performed after the physical treatment with an increased etching power and the chemical treatment with a reduced etching power without exposure to the atmosphere.

The method according to claim 9, wherein the physical treatment is performed with Ar plasma, and the chemical treatment is performed with oxygen plasma.

The method according to claim 1, wherein a voltage is applied during the main bonding to perform anodic bonding.

The method according to claim 1, wherein at least one of the objects to be bonded is an oxide containing Si or SiO ² , glass, or a ceramic system.

A semiconductor device or a MEMS device manufactured by the method according to claim 1, wherein the object to be bonded is a wafer or a chip cut from the wafer.

In the method of bonding after bonding the surfaces of the objects to be bonded with an energy wave that is an atomic beam, an ion beam, or plasma, the surface is activated with energy waves and temporarily bonded at room temperature. A joining apparatus in which a process and a process of performing main joining by applying heat are separated.

The bonding apparatus according to claim 14, wherein a plurality of main bonding processes are balanced with respect to the number of the temporary bonding processes.

In a method in which workpieces having different linear expansion coefficients are sandwiched from both sides with workpieces having the same linear expansion coefficient, anodic bonding is performed by stacking three or more workpieces, and voltage is simultaneously applied from the central member toward both end members. The joining apparatus according to claim 14 or 15, further comprising means for applying.

The bonding according to any one of claims 14 to 16, wherein the temporary bonding step includes a reduced pressure chamber, the temporary bonding is performed in the reduced pressure chamber under reduced pressure or gas replacement, and the main bonding is performed in the atmosphere. apparatus.

The bonding apparatus according to claim 14, wherein the energy wave is plasma and includes plasma processing means.

The plasma is a low-pressure plasma, and includes a vacuum chamber capable of depressurization, a plasma generation unit, and a plasma reaction gas supply unit, and after processing, the objects to be bonded are continuously brought into contact with each other in a vacuum to perform bonding. Item 19. A bonding apparatus according to Item 18.

The bonding apparatus according to claim 18 or 19, wherein the bonding surface is hydrophilized by the plasma and temporarily bonded.

21. The joining apparatus according to claim 20, further comprising a water gas generating means, and joining after a gas containing H ² O or H, OH group is mixed during or after the hydrophilic treatment by plasma.

21. A reduced-pressure plasma processing means for switching an etching force on an object to be bonded, and performing a chemical treatment with a reduced etching power without exposure to the atmosphere after a physical treatment with an increased etching power in the plasma hydrophilic treatment. 21. The joining apparatus according to item 21.

The bonding apparatus according to claim 9, wherein the physical treatment is performed with Ar plasma, and the chemical treatment is performed with oxygen plasma.

The joining apparatus according to any one of claims 14 to 23, comprising a heating means and a voltage applying means, and applying a voltage during the main joining to perform anodic bonding.

Joining apparatus according to any one of claims 14 to 24 which is an oxide containing at least one of the objects to be bonded is Si or SiO ^2, glass, ceramic.