JP2018074050A - Board bonding method and board bonding device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a board bonding method and a board bonding device capable of suppressing decrease in the bond strength of boards bonded to each other, due to charging of the bonding surfaces of the board to be bonded.SOLUTION: A board bonding method for bonding two boards includes a bonding surface activation process for activating the bonding surfaces of boards by irradiating the bonding surfaces of two boards to be bonded to each other with FAB of Ar, and etching the bonding surfaces of the boards, a board movement contact process for moving the boards in the direction approaching each other, after the bonding surface activation process, and bringing the bonding surfaces of the boards into contact, and a bonding process for bonding two boards. Electrons are supplied to the bonding surfaces of two boards during or after the bonding surface activation process until the board movement contact process.SELECTED DRAWING: Figure 4

Description

  The present invention relates to a substrate bonding method and a substrate bonding apparatus.

  A substrate bonding method for bonding two substrates in a vacuum at room temperature has been proposed (see, for example, Patent Document 1). In this substrate bonding method, first, a bonding surface activation process is performed in which the bonding surfaces of the substrates are activated by irradiating the bonding surfaces of the two substrates to be bonded with an inert gas ion beam or an inert gas fast atom beam. . Thereafter, a bonding step of bonding the two substrates is performed by bringing the bonding surfaces of the two substrates into contact with each other and applying pressure and heating.

JP-A-10-92702 International Publication No. 2012/105474

  By the way, an insulating substrate such as a substrate on which an oxide film or a nitride film is formed, a glass substrate, or a substrate formed from a material having high ion crystallinity is formed using a substrate bonding method using an Ar particle beam in a vacuum. May join. In this case, a large number of atoms, for example, oxygen atoms, that can have either positive or negative charge on the bonding surface are etched due to the difference in atomic bonding force or atomic mass on the bonding surface of the substrate. For this reason, it is considered that the bonding surfaces of the substrates are charged and the bonding of the substrates is hindered due to the repulsive force between the bonding surfaces of the substrates to be bonded. In addition, the particle beam emitted from the particle beam source may not be completely neutralized electrically. In this case, when the particle beam is irradiated onto the bonding surface of the substrate, the bonding surface of the substrate is charged, and the bonding of the substrate is hindered due to the repulsive force generated between the bonding surfaces of the two substrates. The bonding strength of the two substrates is reduced. Further, there has been proposed a substrate bonding method in which Si is deposited on a bonding surface of an insulating substrate and then the insulating substrates are bonded to each other (see, for example, Patent Document 2). However, in the substrate bonding method described in Patent Document 2, electrical insulation is impaired through Si deposited on the bonding surface of the insulator substrate.

  The present invention has been made in view of the above reasons, and a substrate bonding method in which the bonding strength of substrates bonded to each other due to charging of the bonding surfaces of the substrates to be bonded is suppressed. And it aims at providing a substrate bonding apparatus.

In order to achieve the above object, a substrate bonding method according to the present invention includes:
A substrate bonding method for bonding two substrates,
A bonding surface activation step of activating the bonding surface by irradiating a particle beam to the bonding surfaces of the two substrates bonded to each other and etching the bonding surface;
After the bonding surface activation step, the substrate moving contact step of moving the two substrates in a direction approaching each other and bringing the bonding surfaces of the two substrates into contact with each other,
A bonding step of bonding the two substrates after the substrate moving contact step;
Electrons or negative ions are supplied to the bonding surfaces of the two substrates during the bonding surface activation process or after the activation process until the substrate moving contact process.

The substrate bonding method according to the present invention from another viewpoint is as follows:
A substrate bonding method for bonding two substrates,
A bonding surface activation step of activating the bonding surface by irradiating a particle beam to the bonding surfaces of the two substrates bonded to each other and etching the bonding surface;
After the bonding surface activation step, the substrate moving contact step of moving the two substrates in a direction approaching each other and bringing the bonding surfaces of the two substrates into contact with each other,
A bonding step of bonding the two substrates after the substrate moving contact step;
Si is supplied to the joint surfaces of the two substrates during the joint surface activation step.

The substrate bonding apparatus according to the present invention viewed from another viewpoint is
A substrate bonding apparatus for bonding two substrates,
A head that supports one of the two substrates;
A stage for supporting the other of the two substrates;
A head drive unit that moves the head in a direction toward or away from the stage;
A beam radiation source for irradiating a particle beam to a bonding surface of the two substrates bonded to each other;
An electron supply unit for supplying electrons to the bonding surface;
Controlling the electron supply unit to supply electrons to the bonding surface, controlling the beam radiation source, irradiating the bonding surface with a particle beam, and activating the bonding surface; The two substrates are bonded by applying pressure to the two substrates after contacting the bonding surfaces of the two substrates by moving the head in a direction approaching the stage by controlling the driving unit. A control unit.

The substrate bonding apparatus according to the present invention viewed from another viewpoint is
A substrate bonding apparatus for bonding two substrates,
A head that supports one of the two substrates;
A stage for supporting the other of the two substrates;
A head drive unit that moves the head in a direction toward or away from the stage;
A beam radiation source for irradiating a particle beam containing Si on a bonding surface of the two substrates bonded to each other;
After controlling the beam radiation source, irradiating the bonding surface with a particle beam containing Si to activate the bonding surface and supplying Si to the bonding surface, controlling the head driving unit, And a controller that joins the two substrates by applying pressure to the two substrates after bringing the bonding surfaces of the two substrates into contact with each other by moving a head in a direction approaching the stage.

  According to the substrate bonding method of the present invention, electrons or negative ions are supplied to the bonding surfaces of the two substrates during the bonding surface activation process or after the activation process until the substrate moving contact process. In the substrate bonding apparatus according to the present invention, the control unit controls the electron supply source to supply electrons to the bonding surface of the substrate, while supplying the particle beam to the bonding surfaces of the two substrates to the particle beam irradiation unit. After irradiating and activating the bonding surface, the head driving unit is moved in a direction to bring the head closer to the stage, thereby bringing the bonding surfaces of the two substrates into contact with each other, and then applying two pressures to the two substrates. Bond the substrates. Thus, the electrons supplied to the bonding surfaces of the substrates are electrically neutralized and the charge amount of the substrates is reduced, so that the repulsive force generated between the bonding surfaces of the two substrates is weakened. Accordingly, since the inhibition of the bonding between the substrates due to the repulsive force generated between the bonding surfaces of the two substrates is suppressed, the bonding strength between the substrates can be improved.

  Further, according to the substrate bonding method according to the present invention, Si is supplied to the bonding surfaces of the two substrates during the bonding surface activation step. In the substrate bonding apparatus according to the present invention, after the control unit controls the beam radiation source to irradiate the bonding surface with a particle beam containing Si to activate the bonding surface and supply Si to the bonding surface. Then, the heads are moved in a direction to bring the head closer to the stage, thereby bringing the bonding surfaces of the two substrates into contact with each other to bond the two substrates. As a result, Si is supplied to a portion of the bonding surface of the substrate where atoms having either positive or negative charges on the bonding surface are etched more than the other atoms, so that the bonding surface of the substrate is electrically And the charge amount of the substrate is reduced. Accordingly, the repulsive force generated between the bonding surfaces of the two substrates is weakened, and inhibition of bonding between the substrates due to the repulsive force generated between the bonding surfaces of the two substrates is suppressed, so that the bonding strength between the substrates is improved. be able to.

1 is a schematic configuration diagram of a substrate bonding apparatus according to an embodiment of the present invention. It is a schematic block diagram of the beam particle source which concerns on embodiment. It is a block diagram which shows the structure of the control part which concerns on embodiment. It is a flowchart which shows an example of the flow of the board | substrate joining process which the board | substrate joining apparatus which concerns on embodiment performs. (A) is a time chart for demonstrating the board | substrate joining method concerning the comparative example 1, (B) is a time chart for demonstrating the board | substrate joining method concerning the comparative example 2, (C) is a comparative example. 3 is a time chart for explaining the substrate bonding method according to 3, and (D) is a time chart for explaining the substrate bonding method according to the embodiment. (A) is a figure for demonstrating the measuring method of the coupling | bonding energy of a board | substrate by the blade insertion method, (B) is a figure for demonstrating the evaluation method of the joint strength based on Embodiment. (A) is an appearance photograph of Sample 1, (B) is an appearance photograph of Sample 2, (C) is an appearance photograph of Sample 3, and (D) is an appearance photograph of Sample 4. (A) is an appearance photograph of Sample 5, (B) is an appearance photograph of Sample 6, and (C) is an appearance photograph of Sample 7. It is a schematic block diagram of the beam particle source which concerns on a modification. (A) is an appearance photograph of Sample 9, (B) is an appearance photograph of Sample 10, and (C) is an appearance photograph of Sample 11. It is a schematic diagram for demonstrating the board | substrate bonding method which concerns on a modification.

  Hereinafter, a substrate bonding apparatus according to an embodiment of the present invention will be described with reference to the drawings.

  The substrate bonding apparatus according to the present embodiment performs activation processing on the bonding surfaces of two substrates in a chamber under reduced pressure, and then presses and heats the substrates by bringing them into contact with each other. Is a device for joining. In the activation process, the bonding surface of the substrate is activated by irradiating the bonding surface of the substrate with a particle beam.

As shown in FIG. 1, the substrate bonding apparatus 100 according to the present embodiment includes a chamber 200, a stage 401, a head 402, a stage driving unit 403, a head driving unit 404, substrate heating units 421 and 422, And a positional deviation amount measuring unit 500. The substrate bonding apparatus 100 includes beam irradiation units 601 and 602 that irradiate the bonding surfaces of the substrates 301 and 302 with FAB, and an electron supply unit 801 that supplies electrons to the bonding surfaces of the substrates 301 and 302. Further, as the substrates 301 and 302 to be bonded by the substrate bonding apparatus 100, for example, ceramic substrates such as a sapphire substrate, a lithium tantalate (LiTaO ₃ ) substrate (Lt substrate), a lithium niobate (LiNbO ₃ ) substrate (Ln substrate), etc. , Silicon oxide (SiO ₂ ) substrate, nitride substrate (eg, silicon nitride (SiN), aluminum nitride (AlN)), oxynitride substrate (eg, silicon oxynitride (SiON) substrate), silicon (Si) substrate, glass Any of the substrates can be employed. In the following description, the ± Z direction in FIG. 1 will be described as the vertical direction and the XY direction as the horizontal direction as appropriate.

  The chamber 200 is connected to the vacuum pump 201 via an exhaust pipe 202 and an exhaust valve 203. When the exhaust valve 203 is opened and the vacuum pump 201 is operated, the gas in the chamber 200 is discharged out of the chamber 200 through the exhaust pipe 202, and the atmospheric pressure in the chamber 200 is reduced (depressurized). Further, the atmospheric pressure (degree of vacuum) in the chamber 200 can be adjusted by adjusting the exhaust amount by changing the opening / closing amount of the exhaust valve 203.

  The stage 401 and the head 402 are disposed in the chamber 200 so as to face each other in the Z direction. The stage 401 supports the substrate 301 on its upper surface, and the head 402 supports the substrate 302 on its lower surface. The upper surface of the stage 401 and the lower surface of the head 402 are roughened in consideration of the case where the contact surfaces of the substrates 301 and 302 with the stage 401 and the head 402 are mirror surfaces and are not easily peeled off from the stage 401 and the head 402. May be. The stage 401 and the head 402 have holding mechanisms (not shown) that hold the substrates 301 and 302, respectively. The holding mechanism is composed of an electrostatic chuck or a vacuum chuck.

  The stage driving unit 403 can move the stage 401 in the XY directions or rotate it around the Z axis.

  The head drive unit 404 moves the head 402 up and down (see arrow AR1 in FIG. 1). The head drive unit 404 brings the head 402 closer to the stage 401 by moving the head 402 downward. The head driving unit 404 moves the head 402 upward to move the head 402 away from the stage 401. When the head driving unit 404 applies a driving force in a direction approaching the stage 401 to the head 402 in a state where the substrates 301 and 302 are in contact with each other, the substrate 302 is pressed against the substrate 301. In addition, the head driving unit 404 is provided with a pressure sensor 408 that measures a driving force that causes the head driving unit 404 to act on the head 402 in a direction approaching the stage 401. From the measurement value of the pressure sensor 408, the pressure acting on the bonding surfaces of the substrates 301 and 302 when the substrate 302 is pressed against the substrate 301 by the head driving unit 404 can be detected. The pressure sensor 408 is composed of, for example, a load cell.

  The substrate heating units 421 and 422 are composed of, for example, an electric heater. The substrate heating units 421 and 422 heat the substrates 301 and 302 by transferring heat to the substrates 301 and 302 supported by the stage 401 and the head 402. Further, by adjusting the amount of heat generated by the substrate heating units 421 and 422, the temperature of the substrates 301 and 302 and their bonding surfaces can be adjusted.

  The positional deviation amount measuring unit 500 measures the positional deviation amount in the horizontal direction of the substrate 301 with respect to the substrate 302 by recognizing the positions of alignment marks (alignment marks) provided on the substrates 301 and 302, respectively. The positional deviation amount measuring unit 500 recognizes the alignment marks on the substrates 301 and 302 using, for example, light (for example, infrared light) transmitted through the substrates 301 and 302. The stage driving unit 403 moves the stage 401 in the horizontal direction and rotates the stage 401 based on the positional shift amount measured by the positional shift amount measuring unit 500, thereby aligning the substrates 301 and 302 with each other. (Alignment operation) is executed. The measurement of the positional deviation amount by the positional deviation amount measuring unit 500 and the alignment operation of the stage driving unit 403 are both performed under the control of the control unit 700.

  The beam irradiation units 601 and 602 are for irradiating the bonding surfaces of the substrates 301 and 302 with a particle beam before bonding the two substrates 301 and 302 together. As the particle beam, for example, a fast atom beam (FAB) of an inert gas (for example, argon (Ar)) is used, and the bonding surface of the substrates 301 and 302 is irradiated with an FAB of Ar, whereby the substrate 301 is irradiated. , 302 are removed (cleaned) to activate the bonded surfaces, beam irradiation units 601 and 602 include gas storage units 611 and 621, supply valves 613 and 623, and supply pipes 612 and 622, respectively. And beam radiation sources 614 and 624.

  As shown in FIG. 2, the beam radiation source 614 includes a discharge chamber 6146, an electrode 6142 disposed in the discharge chamber 6146, and a DC power source 6143. A supply tube 612 is connected to the discharge chamber 6146, and the inside of the supply tube 612 communicates with the inside of the discharge chamber 6146. Then, Ar gas is introduced into the discharge chamber 6146 from the gas reservoirs 611 and 621 through the supply pipes 612 and 622. The peripheral wall of the discharge chamber 6146 is provided with a FAB radiation port 6146a that emits neutral atoms. The discharge chamber 6146 is made of a carbon material. The beam radiation source 624 has the same configuration as the beam radiation source 614. When a voltage is applied between the peripheral wall of the discharge chamber 6146 and the electrode 6142 by the DC power supply 6143, the Ar gas introduced into the discharge chamber 6146 collides with electrons moving at high speed by an electric field, and Ar ions are Generate. The generated Ar ions are attracted to the peripheral wall of the discharge chamber 6146. At this time, when Ar ions traveling toward the FAB radiation port 6146a pass through the FAB radiation port 6146a, they receive electrons from the peripheral wall of the discharge chamber 6146 formed of a carbon material at the outer periphery of the FAB radiation port 6146a. The Ar ions are discharged out of the discharge chamber 6146 as electrically neutralized Ar atoms. However, a part of Ar ions cannot receive electrons from the peripheral wall of the discharge chamber 6146 and is discharged out of the discharge chamber 6146 as Ar ions. Further, the flow rate of Ar gas supplied to the beam radiation sources 614 and 615 is adjusted by controlling the opening degree of the supply valves 613 and 623 shown in FIG.

  The electron supply unit 801 includes a metal filament 811 and a filament power supply 812 that supplies current to the metal filament 811. The metal filament 811 is formed from, for example, a tungsten wire.

  As shown in FIG. 3, the control unit 700 includes an MPU (Micro Processing Unit) 701, a main storage unit 702, an auxiliary storage unit 703, an interface 704, and a bus 705 that connects the units. The main storage unit 702 includes a volatile memory and is used as a work area for the MPU 701. The auxiliary storage unit 703 includes a nonvolatile memory and stores a program executed by the MPU 701. Further, the auxiliary storage unit 703 also stores information indicating a time for a bonding surface activation process, which will be described later, and a waiting time. The interface 704 converts measurement signals input from the pressure sensor 408 and the positional deviation amount measurement unit 500 into measurement information and outputs the measurement information to the bus 705. In addition, the MPU 701 reads the program stored in the auxiliary storage unit 703 into the main storage unit 702 and executes it, whereby the substrate heating units 421 and 422, the stage drive unit 403, the head drive unit 404, the beam are transmitted via the interface 704. By outputting control signals to the irradiation units 601 and 602 and the filament power supply 812, the substrate heating units 421 and 422, the stage drive unit 403, the head drive unit 404, the beam irradiation units 601 and 602, and the filament power supply 812 are controlled.

  Next, a substrate bonding process performed by the substrate bonding apparatus 100 according to the present embodiment will be described with reference to FIG. The substrate bonding process is started when the control unit 700 starts a program for executing the substrate bonding process. In FIG. 4, the substrates 301 and 302 are transported into the substrate bonding apparatus 100, the substrate 301 is supported by the stage 401, and the substrate 302 is supported by the head 402.

  First, the substrate bonding apparatus 100 activates the bonding surfaces of the substrates 301 and 302 by etching the bonding surfaces of the substrates 301 and 302 by irradiating the FAB of Ar onto the bonding surfaces of the two substrates 301 and 302 that are bonded to each other. The bonding surface activation process (bonding surface activation process) to be performed is executed (step S1). Here, the substrate bonding apparatus 100 continues to supply electrons from the electron supply unit 801 to the bonding surfaces of the substrates 301 and 302 while irradiating the bonding surfaces of the substrates 301 and 302 with the FAB of Ar. Here, the substrate bonding apparatus 100 continues to irradiate the bonding surfaces of the substrates 301 and 302 with the FAB of Ar for the preset bonding surface activation processing time stored in the auxiliary storage unit 703. The substrate bonding apparatus 100 may irradiate the substrate 302 (301) with Ar FAB and then irradiate the substrate 302 (301) with Ar FAB. Both may be irradiated with FAB of Ar simultaneously.

  Next, the substrate bonding apparatus 100 supplies electrons to the bonding surfaces of the substrates 301 and 302 from the electron supply unit 801 in a state where irradiation of Ar FAB to the bonding surfaces of the substrates 301 and 302 is stopped. An electron supply step) is executed (step S2).

  Subsequently, the substrate bonding apparatus 100 brings the substrates 301 and 302 closer to each other from the state where the substrates 301 and 302 are separated from each other, thereby bringing the bonding surfaces of the substrates 301 and 302 into contact with each other (substrate moving contact process) (step S3). Here, the substrate bonding apparatus 100 first brings the head 402 that supports the substrate 302 close to the stage 401 that supports the substrate 301 to bring the substrates 301 and 302 closer together. Next, the substrate bonding apparatus 100 performs an alignment operation between the substrates 301 and 302 based on the positional deviation amount measured by the positional deviation amount measurement unit 500 in a state where the substrates 301 and 302 are close to each other. Subsequently, the substrate bonding apparatus 100 brings the two substrates 301 and 302 into contact with each other by bringing the head 402 closer to the stage 401 again. At this time, the substrate bonding apparatus 100 continues to supply electrons from the electron supply unit 801 to the bonding surfaces of the substrates 301 and 302.

  Thereafter, the substrate bonding apparatus 100 performs a bonding process (bonding process) for bonding the substrates 301 and 302 (step S3). Here, the substrate bonding apparatus 100 bonds the two substrates 301 and 302 by applying pressure to the substrates 301 and 302 while heating the substrates 301 and 302 by the substrate heating units 421 and 422. Further, the substrate bonding apparatus 100 continues to supply electrons from the electron supply unit 801 to the bonding surfaces of the substrates 301 and 302 while performing the series of bonding processes. The time for performing the alignment operation is approximately 1 min. By continuing to supply electrons from the electron supply unit 801 to the substrates 301 and 302 during this time, the electron supply process in step S2 described above can be omitted.

  Next, the result of evaluating the bonding strength of the two substrates 301 and 302 bonded by the substrate bonding apparatus 100 according to the present embodiment will be described. Here, the evaluation results of the bonding strength of two substrates bonded by the substrate bonding apparatus 100 (substrate bonding method) according to the present embodiment and the substrate bonding method according to Comparative Examples 1, 2, and 3 described later are bonded. An evaluation result of the bonding strength between the two substrates will be described. First, the substrate bonding method according to Comparative Examples 1, 2, and 3 will be described.

  In the substrate bonding method according to Comparative Example 1, as illustrated in FIG. 5A, as soon as the bonding surface activation process is completed, the substrates 301 and 302 are moved in a direction approaching each other, so that the bonding surfaces of the substrates 301 and 302 are connected to each other. Contact. Thereafter, a joining process is performed. Then, during the bonding surface activation process, the substrates 301 and 302 are moved in a direction approaching each other to bring the bonding surfaces of the substrates 301 and 302 into contact with each other and during the bonding process, from the electron supply unit 801 to the substrates 301 and 302. Irradiation of electrons to the bonding surface is not normally performed.

  In the substrate bonding method according to Comparative Example 2, as shown in FIG. 5B, as in the substrate bonding method according to Comparative Example 1, as soon as the bonding surface activation process is completed, the substrates 301 and 302 are brought closer to each other. The bonding surfaces of the substrates 301 and 302 are brought into contact with each other. Thereafter, a joining process is performed. However, in this substrate bonding method, both the substrate 301 and the substrate 301 are moved toward each other during the bonding surface activation process and the bonding surfaces of the substrates 301 and 302 are brought into contact with each other. , 302 is irradiated with electrons. Then, after bringing the bonding surfaces of the substrates 301 and 302 into contact with each other, the electron irradiation to the bonding surfaces of the substrates 301 and 302 is stopped.

  In the substrate bonding method according to Comparative Example 3, as shown in FIG. 5C, after the bonding surface activation process is completed, the electron supply is performed in a state where the Ar FAB irradiation to the bonding surfaces of the substrates 301 and 302 is stopped. An electron irradiation process for performing electron irradiation from the part 801 to the bonding surfaces of the substrates 301 and 302 is executed. The time ΔT for executing the electron irradiation process is set to 1 min, for example. Thereafter, the substrates 301 and 302 are moved toward each other to bring the bonding surfaces of the substrates 301 and 302 into contact with each other, and then the bonding process is performed. However, in this substrate bonding method, during the bonding surface activation process, electron irradiation from the electron supply unit 801 to the bonding surfaces of the substrates 301 and 302 is stopped, and the substrates 301 and 302 are moved toward each other to move the substrate 301. , 302 is brought into contact with each other, electron irradiation is performed from the electron supply unit 801 to the bonding surfaces of the substrates 301 and 302. Then, after bringing the bonding surfaces of the substrates 301 and 302 into contact with each other, the electron irradiation to the substrates 301 and 302 is stopped.

  On the other hand, in the substrate bonding method according to the present embodiment, as shown in FIG. 5D, after the bonding surface activation process is completed, as shown in FIG. In the state where the FAB irradiation is stopped, the electron irradiation process is performed in which the electron supply unit 801 irradiates the bonding surfaces of the substrates 301 and 302 with electrons. The time ΔT for executing the electron irradiation process is set to 1 min, for example, as in Comparative Example 3. Thereafter, the substrates 301 and 302 are moved toward each other to bring the bonding surfaces of the substrates 301 and 302 into contact with each other, and then the bonding process is performed. This substrate bonding method is realized, for example, when the substrate bonding apparatus 100 executes the above-described substrate bonding process described with reference to FIG. Further, in this substrate bonding method, similar to the substrate bonding method according to Comparative Example 2, the bonding surfaces of the substrates 301 and 302 are brought into contact with each other during the bonding surface activation process and by moving the substrates 301 and 302 in a direction approaching each other. In both cases, electron irradiation from the electron supply unit 801 to the bonding surfaces of the substrates 301 and 302 is performed. When the bonding process is completed, the electron irradiation to the substrates 301 and 302 is stopped.

Next, the results of evaluating the bonding strength of the two substrates 301 and 302 bonded to each other by the substrate bonding method according to Comparative Examples 1 to 3 and the embodiment will be described. Here, a case where a sapphire glass substrate or an Lt substrate is employed as the substrates 301 and 302 will be described. As the substrates 301 and 302, those having a surface roughness Ra of 3 nm or less were used. The sapphire substrate is a kind of ceramic substrate, but a transparent glass substrate was used. The evaluation of the bonding strength was performed on eight types of samples 1 to 7 in which combinations of the types of the substrates 301 and 302 to be bonded and the adopted substrate bonding method were different from each other. Note that the Ar FAB irradiation time (bonding surface activation processing time) to the substrates 301 and 302 was 40 sec in any sample. Further, the degree of vacuum in the chamber 200 before performing the bonding surface activation treatment was set to 5.0 × 10 ⁻⁶ torr in any sample. The degree of vacuum in the chamber 200 during the bonding surface activation treatment was set to 5 × 10 ⁻¹ torr in any sample. In addition, the bonding process of the substrates 301 and 302 was performed by maintaining the substrate 301 and 302 for 1 min in a state where a pressure of 100 N was applied to the substrates 301 and 302. Furthermore, the Ar flow rate during FAB irradiation was set to 55 sccm to 85 sccm. Table 8 below summarizes the types of substrates 301 and 302 to be bonded and the substrate bonding method employed for each of the eight types of samples 1 to 7. In the column of “Substrate to be bonded” in Table 1, “Substrate (head)” indicates the type of the substrate 302 supported by the head 402, and “Substrate (stage)” is the substrate supported by the stage 401. 301 types are shown. In the “substrate bonding method” column, “Comparative Example 1 (2, 3)” indicates that the substrate bonding method according to Comparative Example 1 (2, 3) described above was adopted, and “Embodiment” It shows that the board | substrate joining method based on the above-mentioned embodiment was employ | adopted.

  Moreover, the evaluation of the bonding strength of the substrates 301 and 302 for the samples 1 to 7 was performed by measuring the bonding strength using a blade insertion method. In this blade measurement method, first, as shown by an arrow in FIG. 6A, when a blade BL such as a razor blade is inserted from the peripheral edge of two substrates 301 and 302 bonded to each other into the bonded portion. The peeling length L of the substrates 301 and 302 is measured. For example, a blade having a thickness of 100 μm is used as the blade BL. Further, as shown in FIG. 6B, blades BL are inserted into six positions (Pos 1, Pos 2, Pos 3, Pos 4, Pos 5, Pos 6) on the peripheral portions of the two substrates 301 and 302 joined to each other (FIG. 6 ( B) The peel length L was measured. Then, the bonding strength per unit area at the bonding interface of the substrates 301 and 302 is calculated from the peeling length L for each of the six peripheral portions of the substrates 301 and 302, thereby evaluating the bonding strength of the substrates 301 and 302. Went. In addition, it shows that the joint strength of the board | substrates 301 and 302 is so large that the calculated binding energy is large.

The evaluation results of the bonding strength of the substrates 301 and 302 for Sample 1 to Sample 7 are shown in Table 2 below and FIGS. 7 and 8. In Table 2, the column “sample name” corresponds to each of the samples 1 to 7 in Table 1 described above. Further, the value in the column of “bonding energy” (bonding strength) is the average value of the bonding energy at the six peripheral portions (“Pos1” to “Pos6”) of the two substrates 301 and 302 shown in FIG. Is shown. 7 and 8 are photographs showing the external appearances of Sample 1 to Sample 7. FIG.

In the case of Samples 1 and 2 employing the substrate bonding method according to Comparative Example 1, the binding energy was 0.08 to 1.09 J / m ² , whereas the substrate bonding method according to Comparative Example 1 was employed. In the case of samples 3 and 4, the binding energy is 1.19 to 1.30 J / m ² , which is higher than in the case of samples 1 and 2. Further, as shown in FIGS. 7A and 7B, in Samples 1 and 2, the ratio of the portions where the bonding surfaces of the substrates 301 and 302 as a whole are not bonded is approximately 20% to 60%. When samples 1 and 2 were compared, sample 2 was higher in bonding strength than sample 1. On the other hand, as shown in FIGS. 7C and 7D, in the samples 3 and 4, almost no portion where the bonding surfaces of the substrates 301 and 302 were bonded to each other was observed. This result is considered as follows. When both of the substrates 301 and 302 are substrates having low electrical conductivity such as a sapphire glass substrate or an Lt substrate, the bonding surfaces of both the substrates 301 and 302 are positively charged, and a repulsive force is generated between the bonding surfaces of the substrates 301 and 302. Occurs. And since the repulsive force inhibits the bonding between the substrates 301 and 302, the binding energy of the substrates 301 and 302 is reduced. On the other hand, when either one of the substrates 301 and 302 is a Si substrate having a higher electrical conductivity than the sapphire glass substrate or the Lt substrate, the charge amount of the bonding surface of the substrate 302 made of the Si substrate is sapphire glass substrate or Lt substrate. Therefore, the repulsive force generated between the bonding surfaces is weakened by that amount. Then, it is considered that the binding energy of the substrates 301 and 302 is improved by the amount of the repulsive force between the bonding surfaces being weakened. In addition, it can be considered that the higher bonding strength of the sample 2 than that of the sample 1 is reflected in the fact that the Lt substrate has higher electrical conductivity than the sapphire glass substrate.

Further, in the case of Sample 5 employing the substrate bonding method according to Comparative Example 2, the binding energy is 1.88 J / m ² , and the binding energy in the case of Samples 1 and 2 (0.08 to 1.09 J / m 2). ^It became higher than ² ). Further, as shown in FIG. 8A, in Sample 5, a portion where the bonding surfaces of the substrates 301 and 302 were not bonded was hardly observed. With respect to this result, in the substrate bonding method according to Comparative Example 2, the electron supply unit is in contact with the bonding surfaces of the substrates 301 and 302 during the bonding surface activation process and while the substrates 301 and 302 are moved toward each other. Electrons are irradiated from 801 to the bonding surfaces of the substrates 301 and 302. As a result, the bonding surfaces of the substrates 301 and 302 are electrically neutralized, the charge amount of the substrates 301 and 302 is reduced, the repulsive force generated between the bonding surfaces of the substrates 301 and 302 is weakened, and the binding energy of the substrates 301 and 302 is reduced. Is considered to be further improved. Further, the binding energy in the case of the sample 5 is higher than the binding energy in the case of the samples 3 and 4 described above. From this, it can be seen that in the substrate bonding method according to Comparative Example 2, the effect of reducing the charge amount on the bonding surfaces of the substrates 301 and 302 by irradiating electrons from the electron supply unit 801 to the bonding surfaces of the substrates 301 and 302 is great. .

In the case of Sample 6 employing the substrate bonding method according to the present embodiment, the binding energy is 2.18 J / m ^2, which is even higher than the binding energy in the case of Sample 5 (1.88 J / m ² ). It was. Further, as shown in FIG. 8B, in Sample 5, a portion where the bonding surfaces of the substrates 301 and 302 were not bonded was not observed. From this result, it is considered that the charge amount of the bonding surfaces of the substrates 301 and 302 can be further reduced by performing the electron irradiation processing for irradiating the bonding surfaces of the substrates 301 and 302 with electrons after the bonding surface activation processing. It is done. On the other hand, in the case of Sample 7 employing the substrate bonding method according to Comparative Example 3, the binding energy was 1.55 J / cm ² , which was smaller than that of Samples 5 and 6. Further, as shown in FIG. 8C, in the sample 7, compared with the sample 6, many portions where the bonding surfaces of the substrates 301 and 302 are not bonded are observed. From this result, it can be seen that irradiating the bonding surfaces of the substrates 301 and 302 with electrons during the bonding surface activation process is effective in reducing the charge amount of the bonding surfaces of the substrates 301 and 302. Further, the electron supply process was effective in reducing the charge amount.

  In addition, as shown in FIG. 5D, the substrate bonding apparatus 100 according to the present embodiment performs Ar FAB substrates 301 and 302 after performing the bonding surface activation process and before performing the bonding process. An electron supply process for supplying electrons to the bonding surfaces of the substrates 301 and 302 is executed in a state where irradiation of the bonding surfaces is stopped. As a result, the electrons supplied to the bonding surfaces of the substrates 301 and 302 are electrically neutralized, and the charge amount of the bonding surfaces of the substrates 301 and 302 is further reduced. The repulsive force generated between the joint surfaces can be further weakened.

  In the case where the sapphire glass substrates are bonded to each other by employing the substrate bonding method according to the present embodiment, the binding energy of the sample 5 formed by bonding the sapphire glass substrate and the Lt substrate is substantially equal. From this result, it can be seen that the substrate bonding method according to the present embodiment is suitable not only when bonding the Lt substrate and the sapphire glass substrate but also when bonding the sapphire glass substrates.

As described above, if the substrate bonding method according to this embodiment is adopted, even if the substrates 301 and 302 are sapphire substrates or Lt substrates that have low electrical conductivity compared to Si substrates and can be regarded as insulators. The bonding strength (bonding energy) of the substrates 301 and 302 can be improved. Moreover, generation | occurrence | production of the part which the joining surfaces of the board | substrates 301 and 302 are not joined can also be suppressed. Here, the case where the substrates 301 and 302 are sapphire substrates or Lt substrates has been described. For example, the substrates 301 and 302 are Ln substrates, SiO ₂ substrates, nitride substrates, oxynitride substrates, Si substrates, and glass substrates. Even in the case of the substrate, similar results were obtained such as an increase in bonding strength.

  As described above, in the substrate bonding apparatus 100 according to the present embodiment, the control unit 700 supplies the electron beams to the beam irradiation units 601 and 602 while supplying electrons to the bonding surfaces of the two substrates. After irradiating particle surfaces to the bonding surfaces of the two substrates to activate the bonding surfaces, the bonding surfaces of the two substrates are brought into contact with each other by moving the head closer to the stage to the drive unit. Join. Electrons are supplied to the bonding surfaces of the two substrates 301 and 302 during the bonding surface activation process and the bonding process. As a result, the electrons supplied to the bonding surfaces of the substrates 301 and 302 are electrically neutralized and the charge amount of the bonding surfaces of the substrates 301 and 302 is reduced. 302 The repulsive force generated between the respective joint surfaces is weakened. Accordingly, since the inhibition of the bonding between the substrates 301 and 302 due to the repulsive force generated between the bonding surfaces of the two substrates 301 and 302 is suppressed, the bonding strength between the substrates 301 and 302 can be improved.

  Furthermore, in the substrate bonding apparatus 100 according to the present embodiment, the particle beam emitted from the beam radiation sources 614 and 624 is an Ar FAB, that is, an electrically neutral Ar atom beam. However, the particle beams emitted from the beam radiation sources 614 and 624 include Ar ions emitted from the beam radiation sources 614 and 624 as they are without being neutralized electrically. Then, the bonding surface of the substrates 301 and 302 is charged due to the irradiation of the particle beam containing Ar ions on the bonding surfaces of the substrates 301 and 302. On the other hand, in the substrate bonding apparatus 100 according to the present embodiment, charging of the bonding surfaces of the substrates 301 and 302 is suppressed by supplying electrons to the bonding surfaces of the substrates 301 and 302. The repulsive force generated between the joint surfaces can be weakened.

  In addition, the electron supply unit 801 according to the present embodiment includes a metal filament 811 and a filament power supply 812 that supplies a current to the metal filament 811, and a current flows from the filament power supply 812 to the metal filament 811. In this configuration, electrons are emitted from 811. Thereby, the structure of the electron supply part 801 can be simplified.

(Modification)
Although the embodiment of the present invention has been described above, the present invention is not limited to the configuration of the above-described embodiment. For example, in the bonding surface activation process, silicon (Si) may be deposited on the bonding surfaces of the substrates 301 and 302 together with the FAB of Ar.

  For example, as shown in FIG. 9, the substrate bonding apparatus according to this modification includes a beam radiation source 2614 having a configuration different from that of the beam radiation sources 614 and 615 instead of the beam radiation sources 614 and 615 according to the embodiment. . In FIG. 9, the same components as those of the beam radiation source 614 according to the embodiment are denoted by the same reference numerals as those in FIG. The substrate bonding apparatus according to this modification is the same as the substrate bonding apparatus 100 according to the embodiment except for the beam radiation source 2614.

  The beam radiation source 2614 includes a discharge chamber 6146, an electrode 6142 disposed in the discharge chamber 6146, a DC power source 6143, and a silicon (Si) member 6149 formed of Si and disposed inside the discharge chamber 6146. Have. In the example shown in FIG. 9, an example is described in which the Si member 6149 is arranged so as to cover the inside of the peripheral wall of the discharge chamber 6146 excluding the portion where the FAB radiation port 6149a is provided. The configuration of the Si member 6149 is not limited to this. For example, the Si member 6149 may cover the entire inner surface of the discharge chamber 6149, or only a part of the discharge chamber 6149 (for example, a wall portion facing the wall portion provided with the FAB radiation port 6149a in FIG. 9). May be covered. In this beam radiation source 2614, when a voltage is applied between the peripheral wall of the discharge chamber 6146 and the electrode 6142 by the DC power source 6143, a part of Ar ions generated in the discharge chamber 6146 is applied to the Si member 6149. Gravitate. Then, Ar ions collide with the Si member 6149, the Si member 6149 is sputtered, and Si constituting the Si member 6149 is released into the discharge chamber 6146. A part of Si released from the Si member 6149 is released outside the discharge chamber 6146 through the FAB radiation port 6146a.

  In this way, the beam particle source 2614 emits FAB containing Ar and Si toward the substrates 301 and 302. Here, Si supplied from the beam particle source 2614 to the bonding surfaces of the substrates 301 and 302 adheres to the bonding surfaces of the substrate 301 and is simultaneously etched by the impact of Ar FAB. Then, by adjusting the balance between the Si adhesion rate and the Ar FAB etching rate, a certain amount or more of Si particles are not deposited so that a complete Si film is formed. Si can be sparsely present on the bonding surface. In addition, the control unit performs Ar FAB irradiation on the bonding surface of the substrate 301 and deposits Si on the bonding surface of the substrate 301, and at the same time controls the electron supply unit 801 to apply electrons to the bonding surface of the substrate 301. Continue to supply.

  By the way, in the substrate bonding method according to the embodiment, in the bonding of insulator substrates such as a sapphire substrate, an Lt substrate, and an Ln substrate, even if Si does not exist at the bonding interface, the substrate 301 and 302 are supplied from the electron supply unit 801. It has been explained that bonding can be performed with relatively high bonding strength by supplying electrons to the bonding surface. However, when the substrates formed of an ion crystalline material, such as a substrate or glass on which an oxide film or nitride film having complete ion crystallinity is formed, are bonded sufficiently by the substrate bonding method according to the embodiment. There is a possibility that strength cannot be obtained.

  Here, the result of evaluating the bonding strength of the two substrates 301 and 302 bonded by the substrate bonding apparatus according to this modification will be described. Here, the evaluation results of the bonding strength of the two substrates bonded by the substrate bonding apparatus (substrate bonding method) according to the present modification, and 2 bonded by the substrate bonding method according to Comparative Example 1 and Comparative Example 4 to be described later. The evaluation results of the bonding strength of the two substrates will be described. The substrate bonding method according to Comparative Example 4 is a substrate bonding method in which Si is supplied to the bonding surfaces of the substrates 301 and 302 in the substrate bonding method according to Comparative Example 1. The substrate bonding method according to this modification is a substrate bonding method in which Si is supplied from the beam particle source 2614 to the bonding surfaces of the substrates 301 and 302 during the bonding surface activation process in the substrate bonding method according to the embodiment. .

Next, the results of evaluating the bonding strength of the two substrates 301 and 302 bonded to each other by the substrate bonding method according to Comparative Examples 1 and 4 and this modification will be described. Here, a case where a sapphire glass substrate or a Si substrate on which an S _i O ₂ film is formed is employed as the substrates 301 and 302 will be described. The evaluation of the bonding strength was performed on four types of samples 1, 8, 9, and 10 produced by employing the substrate bonding method according to Comparative Examples 1 and 4 and this modification. Here, in Samples 1, 8 and 9, a sapphire glass substrate was adopted as the substrates 301 and 302, and in the sample 11, a Si substrate on which an S _i O ₂ film was formed was adopted as the substrates 301 and 302. The evaluation results of the bonding strength of the substrates 301 and 302 for Sample 8 to Sample 10 are shown in Table 3 below and FIG. In Table 3, the values in the “sample name” column and the “joining strength (binding energy)” column are the same as those in Table 2.

In the case of Sample 1 employing the substrate bonding method according to Comparative Example 1, the substrates 301 and 302 were not bonded to each other. Further, in the case of Sample 8 employing the substrate bonding method according to Comparative Example 4, the binding energy was 1.8 J / m ² . As shown in FIG. 10A, the sample 8 had few portions where the bonding surfaces of the substrates 301 and 302 were not bonded. In the case of the sample 9 employing the substrate bonding method according to this modification, the binding energy was 2.10 J / m ² , which was higher than that in the case of the sample 9 (1.8 J / m ² ). . Further, as shown in FIG. 10B, in the sample 9, a portion where the bonding surfaces of the substrates 301 and 302 were not bonded was not observed. Thus, in the sample 9, compared to the sample 8, the bonding strength between the substrates 301 and 302 was increased, and a better bonding was obtained. In addition, since the amount of charge on the bonding surface is reduced, particles are not attracted to the bonding surface, and voids in the central portions of the substrates 301 and 302 are eliminated.

Further, when the Si substrate on which the SiO ₂ oxide film was formed was adopted as the substrates 301 and 302, when the substrate joining method according to Comparative Example 1 was adopted, the substrates 301 and 302 were not joined together. On the other hand, in the case of the sample 10 employing the substrate bonding method according to this modification, as shown in FIG. 10C, a portion where the bonding surfaces of the substrates 301 and 302 are not bonded to each other was not observed. Furthermore, in the case where an SiC substrate is employed as the substrates 301 and 302, when the substrate joining method according to Comparative Example 1 is employed, the substrates 301 and 302 are not joined to each other. On the other hand, when the substrate bonding method according to this modification is adopted, the bonding surfaces of the substrates 301 and 302 are bonded to each other. Thus, by adopting the substrate bonding method according to this comparative example, the tendency of the bonding state between the substrates 301 and 302 to improve is that other types of substrates (substrates with other oxide films formed, nitride films). The substrate was formed in the same manner on a substrate formed with a carbide, such as a glass substrate, a Ln substrate, or SiC.

  The results of evaluating the bonding strength of the two substrates 301 and 302 bonded to each other as described above can be considered as follows. When the substrates 301 and 302 are the above-mentioned glass substrate, a substrate formed of a carbide such as SiC, an oxide film or a nitride film with high ionic crystallinity, or a material formed with a material with high ionic crystallinity, a comparative example As in the substrate bonding method according to No. 1, the substrates 301 and 302 cannot be bonded to each other only by etching with an Ar FAB. This is because an atom having a positive or negative charge among atoms bonded by positive or negative charge, for example, an oxygen atom, due to a difference in atomic bonding force or atomic mass at the bonding surfaces of the substrates 301 and 302. Therefore, it is considered that the interface is charged and repels and cannot be joined. For example, as shown in FIG. 11A, it is assumed that more oxygen atoms are etched in the bonding surfaces of the substrates 301 and 302 when the bonding surfaces of the substrates 301 and 302 are irradiated with the FAB of Ar. In this case, as shown in FIG. 11B, the bonding surfaces of the substrates 301 and 302 are positively charged. If both the bonding surfaces of the substrates 301 and 302 are positively charged, a repulsive force is generated between the bonding surfaces of the substrates 301 and 302, and the bonding of the substrates 301 and 302 is hindered.

  On the other hand, in the substrate bonding method according to this modification, as shown in FIG. 11C, the number of negatively charged atoms is larger than the number of positively charged atoms in the bonded surfaces of the substrates 301 and 302. Si is supplied to the formed portion. As a result, the bonding surfaces of the substrates 301 and 302 are electrically neutralized, and the charge amount of the substrates 301 and 302 is reduced. Therefore, when the repulsive force generated between the bonding surfaces of the two substrates 301 and 302 is weakened, the inhibition of bonding between the substrates 301 and 302 due to the repulsive force generated between the bonding surfaces of the two substrates 301 and 302 is suppressed. Conceivable. And the joining strength was also improved, and better joining became possible.

  According to this configuration, the bonding strength (bonding energy) of the substrates 301 and 302 is improved as compared with the case where the substrates 301 and 302 are bonded without Si being present at the bonding interface between the substrates 301 and 302. Moreover, the ratio of the part which the joint surfaces in the board | substrate 301,302 whole is not joined also decreases.

  By the way, when the substrates 301 and 302 are a substrate or glass on which an oxide film or nitride film with high ionic crystallinity is formed, a substrate formed from a material with high ionic crystallinity, a ceramic substrate, or carbide such as SiC, As shown in FIG. 5, since only oxygen atoms bonded with positive and negative charges are etched only by etching with Ar FAB, the bonding surface is charged and a repulsive force is generated between the substrates 301 and 302. It is thought that can not be joined. The substrates 301 and 302 cannot be joined together. In addition, even when the amount of charge on the bonding surfaces of the substrates 301 and 302 can be reduced by supplying electrons to the bonding surfaces of the substrates 301 and 302, it is difficult to bond the substrates 301 and 302 with sufficient bonding strength. It is. On the other hand, when Si is deposited on the bonding surfaces of the substrates 301 and 302, the substrates 301 and 302 can be bonded with sufficient bonding strength, but the electrical insulation is impaired.

  On the other hand, when the substrate bonding method according to this modification is adopted, the bonding interface between the substrates 301 and 302 is irradiated onto the bonding surfaces of the substrates 301 and 302 in parallel with the FAB of Ar together with the Si FAB. Since Si is etched at the same time as Si is deposited, the Si film is not formed due to the balance between Si deposition and Ar etching. Then, Si particles can be sparsely interposed between the bonding surfaces of the substrates 301 and 302. Thereby, the electrical insulation at the bonding interface between the substrates 301 and 302 can be maintained. In addition, even if the substrates 301 and 302 are substrates formed of an oxide film or a nitride film having complete ionic crystallinity, a glass, or a substrate formed of an ion crystalline material, the substrates 301 and 302 are sufficiently separated from each other. Bonding can be performed with bonding strength.

  In the embodiment, the configuration in which the electron supply unit 801 includes the metal filament 811 has been described. However, the configuration is not limited thereto. For example, the electron supply unit 801 may include an ion source that emits negative ions. . As the ion source, for example, a device that generates negative ions electrically or a device that generates negative ions using UV (Ultra Violet) light may be employed. Also with this configuration, the bonding surfaces of the substrates 301 and 302 can be electrically neutralized, and the amount of charge on the bonding surfaces of the substrates 301 and 302 can be reduced.

  In the embodiment, an example in which the substrate bonding apparatus 100 performs bonding surface activation processing for activating the bonding surfaces of the substrates 301 and 302 by irradiating the bonding surfaces of the two substrates 301 and 302 with FAB of Ar. did. However, the present invention is not limited to this, and for example, the bonding surface activation process may be performed on only one of the bonding surfaces of the substrates 301 and 302.

  In the embodiment, the example in which the beam radiation sources 614 and 624 irradiate the FAB has been described. However, the present invention is not limited to this, and for example, the beam radiation sources 614 and 624 may irradiate the ion beam. In this case, the beam radiation sources 614 and 624 may be configured to emit Ar ions as they are after being accelerated by an electric field generated between the anode and the cathode. The Ar ions are electrically neutralized by electrons supplied from the electron supply unit 801 before reaching the bonding surfaces of the substrates 301 and 302 to become electrically neutral Ar atoms.

  In the embodiment, the example in which the particle beam emitted from the beam radiation sources 614 and 624 is an Ar FAB has been described. However, the present invention is not limited to this as long as it is an inert gas FAB. For example, the particle beam may be other inert gas (such as krypton (Kr) or xenon (Xe)) or nitrogen FAB.

  In the embodiment, the example in which the beam radiation sources 614 and 624 are fixed at the same place has been described. However, the present invention is not limited to this. For example, the beam radiation sources 614 and 624 are scanned on the bonding surfaces of the substrates 301 and 302. The structure which can be used may be sufficient.

  In the embodiment, as the substrates 301 and 302, a substrate in which at least one of oxide, nitride, or glass is exposed on a bonding surface thereof may be employed. For example, as the substrates 301 and 302, a substrate in which an oxide or nitride film is formed on a Si substrate, or a substrate formed of carbide or glass such as SiC may be employed.

  Alternatively, in the embodiment, a substrate in which a metal conductive pattern is formed on a sapphire substrate, an Lt substrate, or an Ln substrate may be employed as the substrates 301 and 302. In particular, when the substrates 301 and 302 are bonded by the substrate bonding apparatus according to the modification described with reference to FIG. 9 described above, Si is sparsely present at the bonding interface between the substrates 301 and 302. Therefore, even if a substrate having a conductive pattern formed on each bonding surface is used as the substrates 301 and 302, there is a possibility that the conductive pattern is short-circuited through Si present at the bonding interface at the bonding interface of the substrates 301 and 302. Very low.

  In the above-described modification, the Ar beam particle source and the Si beam particle source are configured from the same beam particle source. However, the present invention is not limited to this example. For example, the Ar beam particle source and the Si beam particle source A beam particle source may be provided separately.

  The present invention is suitable for manufacturing, for example, SAW (Surface Acoustic Wave) filters, LEDs (Light Emitting Diodes), image sensors, memories, arithmetic elements, and MEMS (Micro Electro Mechanical Systems).

100: substrate bonding apparatus, 200: chamber, 201: vacuum pump, 202: exhaust pipe, 203: exhaust valve, 301, 302: substrate, 401: stage, 402: head, 403: stage drive unit, 404: head drive unit 408: Pressure sensor, 421, 422: Substrate heating unit, 500: Position shift amount measuring unit, 601, 602: Beam irradiation unit, 611, 621: Gas storage unit, 612, 622: Supply pipe, 613, 623: Supply Valve, 614, 624, 2614: Beam radiation source, 700: Control unit, 701: MPU, 702: Main storage unit, 703: Auxiliary storage unit, 704: Interface, 705: Bus, 801: Electron supply unit, 811: Metal Filament, 812: Filament power supply, 6142: Electrode, 6143: DC power supply, 6146: Discharge chamber, 6149: Si member

Claims (13)

A substrate bonding method for bonding two substrates,
A bonding surface activation step of activating the bonding surface by irradiating a particle beam to the bonding surfaces of the two substrates bonded to each other and etching the bonding surface;
After the bonding surface activation step, the substrate moving contact step of moving the two substrates in a direction approaching each other and bringing the bonding surfaces of the two substrates into contact with each other,
A bonding step of bonding the two substrates after the substrate moving contact step;
Supplying electrons or negative ions to the bonding surfaces of the two substrates during the bonding surface activation step or after the activation step until the substrate moving contact step;
Substrate bonding method. A substrate bonding method for bonding two substrates,
A bonding surface activation step of activating the bonding surface by irradiating a particle beam to the bonding surfaces of the two substrates bonded to each other and etching the bonding surface;
After the bonding surface activation step, the substrate moving contact step of moving the two substrates in a direction approaching each other and bringing the bonding surfaces of the two substrates into contact with each other,
A bonding step of bonding the two substrates after the substrate moving contact step;
During the bonding surface activation step, Si is supplied to the bonding surfaces of the two substrates.
Substrate bonding method. An electron supply step of supplying electrons to the bonding surfaces of the two substrates in a state where irradiation of the particle beam to the bonding surfaces of the substrates is stopped after the bonding surface activation step and before the bonding step. In addition,
The substrate bonding method according to claim 1. The particle beam is a fast atom beam of inert gas;
The substrate bonding method according to any one of claims 1 to 3. The two substrates are formed of an insulator,
The substrate bonding method according to any one of claims 1 to 4. The two substrates are substrates in which at least one of oxide, nitride, carbide, ceramics, and glass is exposed on the bonding surface, respectively.
The substrate bonding method according to claim 5. Each of the two substrates is either a sapphire substrate, a lithium tantalate substrate, or a lithium niobate substrate.
The substrate bonding method according to claim 6. At least one of the two substrates is an insulator substrate on which a conductive pattern is formed.
The substrate bonding method according to any one of claims 1 to 4. A substrate bonding apparatus for bonding two substrates,
A head that supports one of the two substrates;
A stage for supporting the other of the two substrates;
A head drive unit that moves the head in a direction toward or away from the stage;
A beam radiation source for irradiating a particle beam to a bonding surface of the two substrates bonded to each other;
An electron supply unit for supplying electrons to the bonding surface;
Controlling the electron supply unit to supply electrons to the bonding surface, controlling the beam radiation source, irradiating the bonding surface with a particle beam, and activating the bonding surface; The two substrates are bonded by applying pressure to the two substrates after contacting the bonding surfaces of the two substrates by moving the head in a direction approaching the stage by controlling the driving unit. A control unit,
Substrate bonding device. The electron supply unit is
A metal filament;
A filament power supply for passing an electric current to the metal filament,
The substrate bonding apparatus according to claim 9. The electron supply unit includes an ion source that emits negative ions.
The substrate bonding apparatus according to claim 9. The beam radiation source further irradiates the bonding surface with a particle beam of Si.
The substrate bonding apparatus according to claim 9. A substrate bonding apparatus for bonding two substrates,
A head that supports one of the two substrates;
A stage for supporting the other of the two substrates;
A head drive unit that moves the head in a direction toward or away from the stage;
A beam radiation source for irradiating a particle beam containing Si on a bonding surface of the two substrates bonded to each other;
After controlling the beam radiation source, irradiating the bonding surface with a particle beam containing Si to activate the bonding surface and supplying Si to the bonding surface, controlling the head driving unit, A controller that joins the two substrates by applying pressure to the two substrates after bringing the joining surfaces of the two substrates into contact with each other by moving the head in a direction approaching the stage;
Substrate bonding device.