JP5256363B2 - Thin film forming equipment - Google Patents

Thin film forming equipment Download PDF

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JP5256363B2
JP5256363B2 JP2012089510A JP2012089510A JP5256363B2 JP 5256363 B2 JP5256363 B2 JP 5256363B2 JP 2012089510 A JP2012089510 A JP 2012089510A JP 2012089510 A JP2012089510 A JP 2012089510A JP 5256363 B2 JP5256363 B2 JP 5256363B2
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substrate
substrate holding
substrates
thin film
film forming
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JP2013079440A (en
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友松 姜
一郎 塩野
充祐 宮内
貴昭 青山
林  達也
亦周 長江
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Shincron Co Ltd
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Shincron Co Ltd
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Priority to CN201210327850.3A priority patent/CN103014617B/en
Priority to TW101132713A priority patent/TWI403597B/en
Priority to EP12184152A priority patent/EP2573202A1/en
Priority to US13/621,337 priority patent/US9499897B2/en
Priority to KR1020120103105A priority patent/KR101287652B1/en
Publication of JP2013079440A publication Critical patent/JP2013079440A/en
Priority to HK13109126.3A priority patent/HK1181825A1/en
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本発明は、薄膜形成装置に係り、特に、多数の基板上の特定部分に対し、効率よく薄膜を形成することが可能な薄膜形成装置に関する。   The present invention relates to a thin film forming apparatus, and more particularly, to a thin film forming apparatus capable of efficiently forming a thin film on specific portions on a large number of substrates.

デジタルカメラやデジタルビデオ等の撮影機器、携帯電話、スマートフォン、携帯ゲーム機等の様々な機器において、基板表面上に薄膜を形成する技術が用いられている。
そして、これらの機器に備えられる基板は、基板全面に亘って薄膜が形成されているものもあるが、基板上のある特定の領域のみに選択的に形成されているものが数多くある。
In various devices such as digital cameras and digital video photographing devices, mobile phones, smart phones, and portable game machines, a technique for forming a thin film on a substrate surface is used.
Some substrates provided in these devices have a thin film formed over the entire surface of the substrate, but many are selectively formed only in a specific region on the substrate.

このように、基板上の特定の部分のみに選択的に薄膜を形成するためには、薄膜形成装置内に配設される基板保持機構に保持された基板において、薄膜を形成しない部分(以下、「非成膜部分」と称する)をマスクによって覆う技術が用いられる。しかし、このようにマスクによって基板を覆う技術では、一般に、基板上の薄膜を形成する部分(以下、「成膜部分」と称する)が、互いに重ならないようにそれぞれの基板が基板保持機構に保持されるため、基板保持機構に保持される基板の数を多くすることができない。したがって、多数の基板に対して一括で成膜することができず、成膜効率が低下するという不都合があった。   As described above, in order to selectively form a thin film only on a specific portion on the substrate, in the substrate held by the substrate holding mechanism disposed in the thin film forming apparatus, a portion where the thin film is not formed (hereinafter, A technique of covering a “non-deposited portion” with a mask is used. However, in the technique of covering the substrate with the mask in this way, generally, each substrate is held by the substrate holding mechanism so that the thin film forming portion on the substrate (hereinafter referred to as “film forming portion”) does not overlap each other. Therefore, the number of substrates held by the substrate holding mechanism cannot be increased. Therefore, it is impossible to form a film on a large number of substrates at a time, and there is a disadvantage that the film formation efficiency is lowered.

上記の問題に対して、マスクを用いて非成膜部分を形成するのではなく、非成膜部分を他の基板で覆うように、基板を重ね合わせた状態で薄膜を形成する技術が提案されている(特許文献1)。   To solve the above problem, a technique has been proposed in which a thin film is formed in a state where the substrates are overlapped so that the non-deposition portion is not covered with a mask but is covered with another substrate. (Patent Document 1).

また、特許文献2では、第1のピン及び第2のピンを用いて複数の基板を傾斜させて配設し、基板の端部近傍に薄膜を形成する技術が提案されている。このように、互いに斜状に配置された基板は、基板同士が互いにマスクの作用をするため、成膜時にマスクを備える必要がなく、且つ、基板が互いに重なるように配置されるため、多数の基板を一括で処理することができる。   Patent Document 2 proposes a technique in which a plurality of substrates are inclined and arranged using a first pin and a second pin, and a thin film is formed in the vicinity of the end of the substrate. As described above, the substrates arranged obliquely to each other do not need to have a mask at the time of film formation because the substrates act as a mask to each other, and are arranged so that the substrates overlap each other. Substrate can be processed at once.

特開昭63−266071号公報JP-A 63-266071 特開平7−34222号公報JP-A-7-34222

しかし、特許文献1で開示された技術では、最後に基板ホルダーに載置される基板の上には、非成膜部分を覆う防着板が取り付けられる必要があるため、作業効率が低下する。また、特許文献2に開示された技術は、基板をそれぞれ第1のピン及び第2のピンに係止する必要があることから、基板の設置作業が煩雑であり、作業時間が長くなるという不都合がある。
したがって、特許文献1及び特許文献2の技術では、薄膜形成時の作業時間が長くなり、成膜作業において費用が嵩むという問題点があった。
However, in the technique disclosed in Patent Document 1, it is necessary to attach an adhesion-preventing plate that covers the non-film-deposited portion on the substrate that is finally placed on the substrate holder. In addition, the technique disclosed in Patent Document 2 requires that the board be locked to the first pin and the second pin, respectively, and thus the installation work of the board is complicated and the work time is increased. There is.
Therefore, the techniques of Patent Document 1 and Patent Document 2 have a problem that the work time for forming a thin film becomes long and the cost for film forming work increases.

さらに、特許文献1及び特許文献2で開示された基板保持機構は、必然的に基板の端部(側面を含む端部)が露出する構成となることから、成膜部分の形状や大きさを細かく設定することが難しい。したがって、基板上に形成可能な成膜部分の形状や大きさが限定されるという不都合があった。   Furthermore, since the substrate holding mechanism disclosed in Patent Document 1 and Patent Document 2 inevitably has a configuration in which the end portion (the end portion including the side surface) of the substrate is exposed, the shape and size of the film forming portion can be reduced. It is difficult to set in detail. Therefore, there is a disadvantage that the shape and size of the film forming portion that can be formed on the substrate are limited.

本発明の目的は、多数の基板上の特定部分のみに薄膜を形成する作業を簡素化して効率化することにより、薄膜形成時の作業時間を短縮し、成膜作業における費用の削減が可能な薄膜形成装置を提供することにある。
また、本発明の他の目的は、基板上の特定の部分のみに成膜部分を形成する際、成膜部分の形状や大きさを細かく設定可能な薄膜形成装置を提供することにある。
An object of the present invention is to simplify and improve the efficiency of forming a thin film only on a specific portion on a large number of substrates, thereby shortening the work time when forming the thin film and reducing the cost of the film forming operation. An object is to provide a thin film forming apparatus.
Another object of the present invention is to provide a thin film forming apparatus capable of finely setting the shape and size of a film forming part when forming a film forming part only on a specific part on a substrate.

前記課題は本発明の薄膜形成装置によれば、複数の基板を保持する基板保持機構を有し、前記複数の基板上に薄膜を形成する薄膜形成装置であって、前記基板保持機構は、前記複数の基板を保持する基板保持部材と、該基板保持部材を支持する支持部材と、該支持部材を回転させる回転部材と、を備え、前記基板保持部材は、前記複数の基板を保持し、前記薄膜の材料を放出する成膜源と前記複数の基板との間に配設される複数の保持面と、該複数の保持面の間に形成された複数の段差部と、前記複数の保持面にそれぞれ形成された複数の開口部と、を有し、前記基板保持部材が前記回転部材の回転方向において分割されてなる保持治具の集合体として構成され、前記支持部材は、前記基板保持部材の前記複数の保持面と、前記回転部材の回転軸とが成す角度が可変となるように前記基板保持部材を保持し、前記複数の基板のうち前記薄膜が形成されない非成膜部分の一部が他の基板と重なり合うと共に、前記薄膜が形成される成膜部分が露出し、前記複数の基板の端部が前記段差部にそれぞれ当接した状態にあるとき、前記成膜部分が、前記開口部を通して前記成膜源側に露出するように、複数の前記基板を搭載可能であること、により解決される。 According to the thin film forming apparatus of the present invention, the subject has a substrate holding mechanism for holding a plurality of substrates, and is a thin film forming apparatus for forming a thin film on the plurality of substrates, wherein the substrate holding mechanism is A substrate holding member for holding a plurality of substrates; a support member for supporting the substrate holding member; and a rotating member for rotating the support member, wherein the substrate holding member holds the plurality of substrates, and A plurality of holding surfaces disposed between a film forming source for releasing a thin film material and the plurality of substrates, a plurality of step portions formed between the plurality of holding surfaces, and the plurality of holding surfaces Each of the plurality of openings formed on the substrate holding member, and the substrate holding member is configured as an assembly of holding jigs divided in the rotation direction of the rotating member. The plurality of holding surfaces and the rotation of the rotating member. Angle between the axis formed by holding the substrate holding member so as to be variable, with a portion of the non-deposition portion of the thin film is not formed among the plurality of substrate overlaps with other substrate, the thin film is formed When the film forming portion is exposed and the end portions of the plurality of substrates are in contact with the stepped portions, the film forming portion is exposed to the film forming source side through the opening. This can be solved by mounting a plurality of the substrates.

基板上の特定の部分のみに薄膜を形成する技術の効率化を図るため、従来は、非成膜部分を他の基板で覆うように基板を互いに重ねて保持した状態で成膜工程を行っていた。このとき、非成膜部分は他の基板で覆うように配置すると共に、成膜部分が露出するように基板を保持させる作業が煩雑であるという問題点があった。
このような問題点に対し、本発明の薄膜形成装置によれば、基板を保持する保持面、及び段差部に基板を当接させる(載置する)だけで容易に複数の基板を基板保持機構に保持させることができる。そして、成膜源と基板との間に基板保持機構の保持面が備えられ、この保持面には成膜部分に相当する部分に開口部が備えられているため、基板の成膜部分のみが露出し、複雑な取り付け作業を行う必要がない。すなわち、基板の非成膜部分を他の基板で覆うと共に、成膜部分を露出するように基板を保持させる作業を簡素化することができる。したがって、基板を保持させる際、複雑な作業を行う必要がないため効率化できる。その結果、薄膜形成時の作業時間を短縮することができ、成膜作業における費用の削減が可能となる。
また、保持面に開口部を備えることにより基板の成膜部分のみを露出させることができるため、保持面(基板保持部材)がマスクの役割を果たす。したがって、開口部の形状や大きさに依存して成膜部分の形状や大きさを制御することができるため、より緻密な成膜作業を行うことが可能となる。
さらに、基板保持機構において、支持部材(すなわち、基板保持機構)を回転させる回転部材をさらに備えることにより、基板保持部材もまた回転させることができるため、複数の基板上に形成される薄膜を均一な膜質、膜厚で形成することができる。
基板保持部材において、基板を保持する保持面と水平面とが成す角度を変更可能とすることにより、基板上に成膜される薄膜の膜厚を補正することができる。その結果、複数の基板において、より均一な膜厚の薄膜を形成することができ、成膜時に必要な材料を削減することができる。
In order to improve the efficiency of the technique of forming a thin film only on a specific part on the substrate, conventionally, the film forming process is performed in a state where the substrates are stacked and held so that the non-film forming part is covered with another substrate. It was. At this time, there is a problem in that the non-film-formation portion is disposed so as to be covered with another substrate, and the operation of holding the substrate so that the film-formation portion is exposed is complicated.
With respect to such problems, according to the thin film forming apparatus of the present invention, a substrate holding mechanism that easily holds a plurality of substrates simply by abutting (mounting) the substrate on the holding surface and the stepped portion. Can be held. The holding surface of the substrate holding mechanism is provided between the film forming source and the substrate, and the holding surface is provided with an opening in a portion corresponding to the film forming portion, so that only the film forming portion of the substrate is provided. It is exposed and does not require complicated installation work. In other words, it is possible to simplify the operation of covering the non-film formation portion of the substrate with another substrate and holding the substrate so that the film formation portion is exposed. Therefore, when the substrate is held, it is not necessary to perform complicated work, so that efficiency can be improved. As a result, it is possible to shorten the work time when forming the thin film, and it is possible to reduce the cost in the film forming work.
In addition, since the opening portion is provided on the holding surface, only the film forming portion of the substrate can be exposed, so that the holding surface (substrate holding member) serves as a mask. Accordingly, since the shape and size of the film forming portion can be controlled depending on the shape and size of the opening, it is possible to perform a more precise film forming operation.
Further, the substrate holding mechanism further includes a rotating member that rotates the support member (that is, the substrate holding mechanism), whereby the substrate holding member can also be rotated, so that the thin film formed on the plurality of substrates can be uniformly formed. It can be formed with an appropriate film quality and film thickness.
In the substrate holding member, by changing the angle formed by the holding surface that holds the substrate and the horizontal plane, the film thickness of the thin film formed on the substrate can be corrected. As a result, a thin film having a more uniform thickness can be formed on a plurality of substrates, and materials necessary for film formation can be reduced.

このとき、前記基板保持部材は、前記回転部材の回転方向において2以上12以下に分割されていると好ましい。
そして、基板保持部材を基板保持機構の回転方向において2分割〜12分割とすることにより、基板保持部材が適当な大きさとなり、支持部材に対して容易に取付けることができる。したがって、成膜作業における作業効率が向上し、作業時間を短縮することができる。
At this time, it is preferable that the substrate holding member is divided into 2 or more and 12 or less in the rotation direction of the rotating member.
Then, by dividing the substrate holding member into two to twelve in the rotation direction of the substrate holding mechanism, the substrate holding member has an appropriate size and can be easily attached to the support member. Therefore, the working efficiency in the film forming operation is improved, and the working time can be shortened.

さらに、前記基板保持部材は、平面視環状に形成され、前記基板保持部材の径方向上で、前記基板保持部材が複数隣り合って配設されると好適である。
このように、環状(ドーナツ状)に形成された基板保持部材を径方向上で隣り合った状態で複数備えることにより、基板保持機構が保持できる基板の数をさらに増やすことができる。したがって、一括で成膜できる基板枚数を増やすことができるため、成膜作業の効率が飛躍的に向上する。
Further, it is preferable that the substrate holding member is formed in an annular shape in plan view, and a plurality of the substrate holding members are arranged adjacent to each other in the radial direction of the substrate holding member.
In this way, by providing a plurality of substrate holding members formed in an annular shape (doughnut shape) in a state of being adjacent in the radial direction, the number of substrates that can be held by the substrate holding mechanism can be further increased. Therefore, since the number of substrates that can be formed in a batch can be increased, the efficiency of the film forming operation is dramatically improved.

このとき、前記基板保持部材は、前記成膜部分と前記成膜源とを通る第1の仮想線と、前記成膜部分の成膜面に対する垂線とが成す角度が0°以上45°以下となるように前記複数の基板を保持すると好ましい。
基板上に薄膜を形成する際、薄膜の厚さ(膜厚)は、成膜面と薄膜材料を放出する成膜源との相対位置に依存する。より詳細には、膜厚は、成膜面に対して成膜源から薄膜材料が入射する角度に依存する。
したがって、成膜面に対して成膜源から薄膜材料が入射する角度、すなわち、基板の成膜面と成膜源を通る仮想線と、成膜面に対する垂線とが成す角度を上記範囲とすることにより、基板上に形成される薄膜の厚さを制御しやすく、複数の基板においてより均一な膜厚の薄膜を形成することができる。
At this time, the substrate holding member has an angle formed by a first imaginary line passing through the film formation portion and the film formation source and a perpendicular to the film formation surface of the film formation portion between 0 ° and 45 °. It is preferable to hold the plurality of substrates as described above.
When forming a thin film on a substrate, the thickness (film thickness) of the thin film depends on the relative position between the film formation surface and the film formation source that releases the thin film material. More specifically, the film thickness depends on the angle at which the thin film material enters from the film formation source with respect to the film formation surface.
Therefore, the angle at which the thin film material is incident on the film formation surface from the film formation source, that is, the angle formed by the imaginary line passing through the film formation surface of the substrate and the film formation source, and the perpendicular to the film formation surface is within the above range. Thus, it is easy to control the thickness of the thin film formed on the substrate, and a thin film having a more uniform thickness can be formed on a plurality of substrates.

また、前記支持部材は、前記複数の保持面に形成された前記複数の開口部が、前記回転部材の回転軸を中心軸とする仮想ドーム上に位置するように前記基板保持部材を支持すると好適である。
このように、基板保持部材において設けられた開口部が、回転部材の回転軸(すなわち、基板保持機構の回転軸)を中心軸とする仮想ドーム上に位置するように配設されることにより、複数の基板において、より均一な膜厚の薄膜を形成することができる。
The support member preferably supports the substrate holding member so that the plurality of openings formed in the plurality of holding surfaces are positioned on a virtual dome having a rotation axis of the rotating member as a central axis. It is.
As described above, the opening provided in the substrate holding member is disposed so as to be positioned on the virtual dome having the rotation axis of the rotation member (that is, the rotation axis of the substrate holding mechanism) as the central axis. A thin film having a more uniform thickness can be formed on a plurality of substrates.

さらに、前記径方向上で互いに隣り合って配設される前記基板保持部材は、一方の前記基板保持部材に形成された前記開口部が、前記成膜源に対し、他方の前記基板保持部材によって遮蔽されない位置に配設されると好ましい。
このように、環状に形成されて互いに径方向上で隣り合って配設される基板保持部材は、基板保持部材に備えられた開口部が、成膜源に対して露出するように配設される。環状に形成された基板保持部材が径方向上で隣り合うように配設された基板保持機構において、基板上に形成される薄膜の厚さは、隣り合って配設される基板保持部材の影響を受けやすい。したがって、基板保持部材に備えられた開口部が成膜源に対して他の基板保持部材によって遮蔽されない位置に備えられることにより、基板上に成膜される薄膜の厚さが基板保持部材の影響を受けにくくなり、膜厚をより均一にすることができる。
Furthermore, the substrate holding member disposed adjacent to each other in the radius direction, the opening formed in the substrate holding member of the hand is, with respect to the deposition source, the other of the substrate holding member It is preferable to be disposed at a position that is not shielded by.
In this way, the substrate holding members that are formed in an annular shape and are arranged adjacent to each other in the radial direction are arranged so that the opening provided in the substrate holding member is exposed to the film forming source. The In the substrate holding mechanism in which the annularly formed substrate holding members are arranged adjacent to each other in the radial direction, the thickness of the thin film formed on the substrate is affected by the adjacent substrate holding members. It is easy to receive. Accordingly, since the opening provided in the substrate holding member is provided at a position that is not shielded by the other substrate holding member with respect to the film forming source, the thickness of the thin film formed on the substrate is influenced by the substrate holding member. It becomes difficult to receive, and a film thickness can be made more uniform.

また、前記支持部材は、平面視環状に形成されて回転方向及び径方向の少なくとも一方において複数配設される前記基板保持部材を支持し、前記径方向上で互いに隣り合って配設される前記基板保持部材は、一方の前記基板保持部材の前記保持面に形成された前記開口部の外周と前記成膜源とを通る第2の仮想線に対し、他方の前記基板保持部材の前記径方向の端部が20mm以上離れた位置に配設されると好適である。
環状に形成された基板保持部材が回転方向及び径方向の少なくとも一方において隣り合うように配設された基板保持機構において、基板上に形成される薄膜の厚さは、隣り合って配設される基板保持部材の影響を受けやすい。したがって、一方の基板保持部材の開口部を、他方の基板保持部材の回転方向及び径方向の少なくとも一方の端部に対して20mm以上離れた位置とすることにより、形成される薄膜の厚さは基板保持部材の影響を受けにくくなり、膜厚をより均一にすることができる。
The support member is formed in an annular shape in plan view, supports the plurality of substrate holding members disposed in at least one of the rotational direction and the radial direction, and is disposed adjacent to each other in the radial direction. The substrate holding member has a radial direction of the other substrate holding member with respect to a second imaginary line passing through the outer periphery of the opening formed on the holding surface of the one substrate holding member and the film forming source. It is preferable that the end of each is disposed at a position separated by 20 mm or more.
In the substrate holding mechanism in which the annularly formed substrate holding members are arranged adjacent to each other in at least one of the rotational direction and the radial direction, the thicknesses of the thin films formed on the substrate are arranged adjacent to each other. It is easily affected by the substrate holding member. Therefore, by setting the opening of one substrate holding member at a position 20 mm or more away from at least one end in the rotation direction and the radial direction of the other substrate holding member, the thickness of the thin film formed is It becomes difficult to be affected by the substrate holding member, and the film thickness can be made more uniform.

このとき、前記複数の段差部は、前記径方向に対して傾斜する方向に沿って形成され、前記複数の基板は矩形状の板材からなり、前記複数の基板において前記径方向内側の縁辺の長さをそれぞれLとし、前記複数の基板のそれぞれの縁辺の中心点から前記回転部材の回転軸までの距離をrとしたとき、前記基板保持部材は、(L/2)/rの値が0.05以上0.75以下となるように前記複数の基板を保持すると好ましい。
このように、薄膜を形成する基板が特に矩形状である時、基板保持部材を上記構成とすることにより、基板保持部材に保持される基板の数をより多くすることができる。したがって、一括で成膜できる基板枚数を増やすことができるため、成膜作業の効率が飛躍的に向上する。
At this time, the plurality of stepped portions are formed along a direction inclined with respect to the radial direction, the plurality of substrates are made of a rectangular plate material, and the length of the radially inner edge of the plurality of substrates is When the length is L and the distance from the center point of each edge of the plurality of substrates to the rotation axis of the rotating member is r, the substrate holding member has a value of (L / 2) / r of 0. It is preferable to hold the plurality of substrates so as to be 0.05 or more and 0.75 or less.
As described above, when the substrate on which the thin film is formed is particularly rectangular, the number of substrates held by the substrate holding member can be increased by configuring the substrate holding member as described above. Therefore, since the number of substrates that can be formed in a batch can be increased, the efficiency of the film forming operation is dramatically improved.

また、前記基板保持部材は、重なり合って保持される前記複数の基板のうち、一方の前記基板の縁辺と、他方の前記基板の縁辺とが成す角度が、0°以上90°以下となるように前記複数の基板を保持すると好適である。
このように、基板保持部材に矩形状の基板を保持させるとき、上記位置関係で配置されることにより、基板保持部材に保持される基板の数をより多くすることができる。したがって、一括で成膜できる基板枚数を増やすことができるため、成膜作業の効率が飛躍的に向上する。
The substrate holding member may be configured such that an angle formed by an edge of one of the plurality of substrates held in an overlapping manner and an edge of the other substrate is 0 ° or more and 90 ° or less. It is preferable to hold the plurality of substrates.
As described above, when the rectangular substrate is held by the substrate holding member, the number of substrates held by the substrate holding member can be increased by being arranged in the above positional relationship. Therefore, since the number of substrates that can be formed in a batch can be increased, the efficiency of the film forming operation is dramatically improved.

さらにまた、前記複数の段差部の高さは、前記複数の基板の厚みと比較して0.05mm以上高く形成されていると好ましい。
このように、基板の縁端が当接する段差部の高さを基板の厚みよりも0.05mm以上高く形成することにより、基板同士を重ねる際、基板表面の損傷を抑制することができる。したがって、品質の良い薄膜付き基板を製造することができる。
Furthermore, it is preferable that the height of the plurality of stepped portions be higher by 0.05 mm or more than the thickness of the plurality of substrates.
Thus, by forming the height of the stepped portion with which the edge of the substrate abuts higher by 0.05 mm or more than the thickness of the substrate, damage to the substrate surface can be suppressed when the substrates are stacked. Therefore, a high-quality substrate with a thin film can be manufactured.

本発明の薄膜形成装置によれば、基板保持部材に対し、複雑な作業を行うことなく、容易に複数の基板を保持させることができる。したがって、基板を保持させる際、複雑な作業を行う必要がないため、成膜作業を効率化できる。その結果、薄膜形成時の作業時間を短縮することができ、成膜作業における費用の削減が可能となる。また、本発明の薄膜形成装置は、基板保持部材に多数の基板を保持させることができるため、一括で成膜可能な基板枚数をより多くすることができ、成膜作業の効率がさらに向上する。
さらに、基板保持機構の基板保持部材の保持面には、成膜部分を露出させるための開口部が備えられているため、保持面(基板保持部材)がマスクの役割を果たす。したがって、開口部の形状や大きさに依存して成膜部分の形状や大きさを制御することができるため、より緻密な成膜作業を行うことが可能となる。
さらにまた、本発明の薄膜形成装置は、基板保持機構に備えられた基板保持部材を上記構成とすることにより、膜厚がより均一となるように薄膜を形成することができる。その結果、成膜時に必要となる材料を削減することができる。
According to the thin film forming apparatus of the present invention, a plurality of substrates can be easily held on the substrate holding member without performing complicated operations. Therefore, it is not necessary to perform a complicated operation when holding the substrate, so that the film forming operation can be made efficient. As a result, it is possible to shorten the work time when forming the thin film, and it is possible to reduce the cost in the film forming work. In addition, since the thin film forming apparatus of the present invention can hold a large number of substrates on the substrate holding member, the number of substrates that can be formed in a batch can be increased, and the efficiency of the film forming operation is further improved. .
Furthermore, since the holding surface of the substrate holding member of the substrate holding mechanism is provided with an opening for exposing the film forming portion, the holding surface (substrate holding member) serves as a mask. Accordingly, since the shape and size of the film forming portion can be controlled depending on the shape and size of the opening, it is possible to perform a more precise film forming operation.
Furthermore, the thin film forming apparatus of the present invention can form a thin film so that the film thickness becomes more uniform by configuring the substrate holding member provided in the substrate holding mechanism as described above. As a result, materials required for film formation can be reduced.

本発明の一実施形態に係る薄膜形成装置を示す模式図である。It is a schematic diagram which shows the thin film forming apparatus which concerns on one Embodiment of this invention. 本発明の一実施形態に係る基板保持機構に保持される基板の平面図である。It is a top view of the board | substrate hold | maintained at the board | substrate holding mechanism which concerns on one Embodiment of this invention. 本発明の一実施形態に係る基板保持機構の平面図である。It is a top view of the substrate holding mechanism concerning one embodiment of the present invention. 本発明の一実施形態に係る基板保持部材を構成する保持治具の斜視図である。It is a perspective view of the holding jig which constitutes the substrate holding member concerning one embodiment of the present invention. 保持治具の平面図である。It is a top view of a holding jig. 保持治具に1枚目の基板を載置した状態を示す平面図である。It is a top view which shows the state which mounted the 1st board | substrate in the holding jig. 保持治具にすべての基板を載置した状態を示す平面図である。It is a top view which shows the state which mounted all the board | substrates on the holding jig. 保持治具に基板を載置した状態を示す断面説明図である。It is sectional explanatory drawing which shows the state which mounted the board | substrate in the holding jig. 保持治具に基板を載置した状態を示す断面説明図である。It is sectional explanatory drawing which shows the state which mounted the board | substrate in the holding jig. 本発明の一実施形態に係る基板保持部材が固定された支持部材と成膜源との位置関係を示す説明図である。It is explanatory drawing which shows the positional relationship of the supporting member to which the board | substrate holding member which concerns on one Embodiment of this invention was fixed, and the film-forming source. 本発明の実施例1に係る反射防止膜の反射率を示すグラフ図である。It is a graph which shows the reflectance of the anti-reflective film which concerns on Example 1 of this invention. 本発明の比較例1に係る反射防止膜の反射率を示すグラフ図である。It is a graph which shows the reflectance of the anti-reflective film which concerns on the comparative example 1 of this invention. 本発明の比較例2に係る反射防止膜の反射率を示すグラフ図であるIt is a graph which shows the reflectance of the anti-reflective film which concerns on the comparative example 2 of this invention. 本発明の他の実施形態に係る基板保持部材の説明図である。It is explanatory drawing of the board | substrate holding member which concerns on other embodiment of this invention. 本発明の他の実施形態に係る基板保持部材の斜視図である。It is a perspective view of the board | substrate holding member which concerns on other embodiment of this invention.

以下に、本発明の実施形態について図面を参照して説明する。なお、以下に説明する部材、配置等は、本発明を限定するものではなく、本発明の趣旨に沿って各種改変することができることは勿論である。   Embodiments of the present invention will be described below with reference to the drawings. It should be noted that members, arrangements, and the like described below do not limit the present invention, and it goes without saying that various modifications can be made in accordance with the spirit of the present invention.

図1乃至図13は、本発明の一実施形態に係るもので、図1は薄膜形成装置を示す模式図、図2は基板保持機構に保持される基板の平面図、図3は基板保持機構の平面図、図4は本発明の一実施形態に係る基板保持部材を構成する保持治具の斜視図、図5は保持治具の平面図、図6は保持治具に1枚目の基板を載置した状態を示す平面図、図7は保持治具にすべての基板を載置した状態を示す平面図、図8は保持治具に基板を載置した状態を示す断面説明図、図9は保持治具に基板を載置した状態を示す断面説明図、図10は本発明の一実施形態に係る基板保持部材が固定された支持部材と成膜源との位置関係を示す説明図、図11は本発明の実施例1に係る反射防止膜の反射率を示すグラフ図、図12は本発明の比較例1に係る反射防止膜の反射率を示すグラフ図、図13は本発明の他の比較例2に係る反射防止膜の反射率を示すグラフ図であり、図14及び図15は、本発明の他の実施形態に係るもので、図14は基板保持部材の説明図、図15は基板保持部材の斜視図である。   1 to 13 relate to one embodiment of the present invention, FIG. 1 is a schematic view showing a thin film forming apparatus, FIG. 2 is a plan view of a substrate held by a substrate holding mechanism, and FIG. 3 is a substrate holding mechanism. FIG. 4 is a perspective view of a holding jig constituting a substrate holding member according to an embodiment of the present invention, FIG. 5 is a plan view of the holding jig, and FIG. 6 is a first substrate in the holding jig. FIG. 7 is a plan view showing a state where all the substrates are placed on the holding jig, FIG. 8 is a cross-sectional explanatory view showing a state where the substrates are placed on the holding jig, and FIG. 9 is an explanatory cross-sectional view showing a state where the substrate is placed on the holding jig, and FIG. 10 is an explanatory view showing the positional relationship between the support member to which the substrate holding member according to the embodiment of the present invention is fixed and the film forming source. FIG. 11 is a graph showing the reflectance of the antireflection film according to Example 1 of the present invention. FIG. 12 is an antireflection film according to Comparative Example 1 of the present invention. FIG. 13 is a graph showing the reflectance, FIG. 13 is a graph showing the reflectance of the antireflection film according to another comparative example 2 of the present invention, and FIGS. 14 and 15 are according to another embodiment of the present invention. FIG. 14 is an explanatory view of the substrate holding member, and FIG. 15 is a perspective view of the substrate holding member.

本発明の特徴的な要素である基板保持機構3は、複数の基板Sに対し一括で薄膜を形成するために、薄膜形成装置100に備えられるものである。基板Sは、その表面全体に亘って薄膜が形成されるものではなく、特定の領域にのみ薄膜が形成されるものであり、成膜部分S1と、薄膜が形成されない非成膜部分S2を備えている。基板保持機構3は、成膜部分S1及び非成膜部分S2を有する基板Sに薄膜を形成する際、大量の基板Sを一括で処理するために以下の構成を備えている。   The substrate holding mechanism 3, which is a characteristic element of the present invention, is provided in the thin film forming apparatus 100 in order to form a thin film on a plurality of substrates S at once. A thin film is not formed over the entire surface of the substrate S, but a thin film is formed only in a specific region, and includes a film forming part S1 and a non-film forming part S2 where no thin film is formed. ing. The substrate holding mechanism 3 has the following configuration in order to process a large number of substrates S collectively when forming a thin film on the substrate S having the film forming portion S1 and the non-film forming portion S2.

<薄膜形成装置の構造>
図1の薄膜形成装置100は、基板Sの表面上に薄膜を形成する真空蒸着装置であり、図1は、薄膜形成装置100の一部を示す概略断面図である。
<Structure of thin film forming apparatus>
A thin film forming apparatus 100 in FIG. 1 is a vacuum vapor deposition apparatus that forms a thin film on the surface of a substrate S, and FIG. 1 is a schematic cross-sectional view showing a part of the thin film forming apparatus 100.

薄膜形成装置100は、真空容器1内を真空状態とし、金属等の薄膜材料を加熱して蒸発させることにより、薄膜材料によって基板Sの表面に薄膜を形成するものである。薄膜形成装置100は、真空容器1と、基板保持機構3と、成膜源4を備えている。   The thin film forming apparatus 100 forms a thin film on the surface of the substrate S by using a thin film material by setting the inside of the vacuum vessel 1 to a vacuum state and heating and evaporating a thin film material such as metal. The thin film forming apparatus 100 includes a vacuum container 1, a substrate holding mechanism 3, and a film forming source 4.

真空容器1は、アルミニウムやステンレス等の公知の金属材料からなり、その内部で基板S上に薄膜を形成するためのほぼ円筒中空の容器体である。真空容器1には、真空ポンプ2が接続され、真空容器1の内部は1×10−2〜1×10−5Pa程度の真空状態とすることができる。真空容器1には、内部にガスを導入する不図示のガス導入管,不図示の圧力計を備える。 The vacuum vessel 1 is made of a known metal material such as aluminum or stainless steel, and is a substantially cylindrical hollow vessel body for forming a thin film on the substrate S therein. A vacuum pump 2 is connected to the vacuum container 1, and the inside of the vacuum container 1 can be in a vacuum state of about 1 × 10 −2 to 1 × 10 −5 Pa. The vacuum vessel 1 includes a gas introduction pipe (not shown) for introducing gas into the inside and a pressure gauge (not shown).

<基板保持機構の構成>
基板保持機構3は、真空容器1の内部に設けられ、複数の基板Sに同時に一括で成膜するため、複数の基板Sを保持する。図1,図3に示すように、側面視で山型形状、平面視で円形状のドーム状に形成されている。図3の矢印は回転部材60の回転方向を示す。
<Configuration of substrate holding mechanism>
The substrate holding mechanism 3 is provided inside the vacuum container 1 and holds a plurality of substrates S in order to form a film on the plurality of substrates S simultaneously. As shown in FIGS. 1 and 3, it is formed in a mountain shape in a side view and a circular dome shape in a plan view. The arrows in FIG. 3 indicate the rotation direction of the rotating member 60.

基板保持機構3は、同心円状に配設された環状の基板保持部材10,20,30,40、基板保持部材10,20,30,40を支持する支持部材50、支持部材50を回転させる回転部材60を備えている。   The substrate holding mechanism 3 includes annular substrate holding members 10, 20, 30, 40 arranged concentrically, a support member 50 that supports the substrate holding members 10, 20, 30, 40, and a rotation that rotates the support member 50. A member 60 is provided.

回転部材60は、公知の回転モータ等からなり、基板保持機構3の中心に備えられ、基板保持機構3の中心において鉛直方向に延びる回転軸Xを有する。
回転部材60は回転軸Xを軸として回転することにより、支持部材50、さらには基板保持部材10,20,30,40が水平方向で回転する。
The rotating member 60 includes a known rotating motor or the like, and is provided at the center of the substrate holding mechanism 3 and has a rotation axis X that extends in the vertical direction at the center of the substrate holding mechanism 3.
The rotation member 60 rotates about the rotation axis X, whereby the support member 50 and the substrate holding members 10, 20, 30, and 40 rotate in the horizontal direction.

支持部材50は、図1,図3に示すように、長尺の棒状体からなり、一端が回転部材60に固定されて、他端が、回部材60よりも下方外側に配置されるように配設されている。 Support member 50, as shown in FIGS. 1 and 3, consists of rod-shaped body of the elongated end is fixed to the rotary member 60, so that the other end is disposed below the outside than the rotating member 60 It is arranged.

支持部材50の一部には、基板保持部材10,20,30,40を固定するための固定用板材51aが取り付けられている。固定用板材51aは、金属性材料からなり、平面状の板部と、この板部から連続し、板部に対して屈曲した支持部材取付部とを備えている。板部と支持部材取付部との角度は、支持部材50と基板保持部材10,20,30,40とが成す角度に等しく、支持部材取付部を支持部材50にボルト締め又は溶接等で固定することにより、板部が基板保持部材10,20,30,40の取付面に平行になるように構成されている。
固定用板材51aの支持部材取付部を支持部材50に取付け、ボルト51によって基板保持部材10,20,30,40を固定することにより、基板保持部材10,20,30,40が支持部材50に支持される。
A fixing plate 51 a for fixing the substrate holding members 10, 20, 30, 40 is attached to a part of the support member 50. The fixing plate 51a is made of a metallic material , and includes a planar plate portion and a support member mounting portion that is continuous from the plate portion and is bent with respect to the plate portion. The angle between the plate portion and the support member mounting portion is equal to the angle formed by the support member 50 and the substrate holding members 10, 20, 30, 40, and the support member mounting portion is fixed to the support member 50 by bolting or welding or the like. Thus, the plate portion is configured to be parallel to the mounting surface of the substrate holding members 10, 20, 30, 40.
By attaching the support member mounting portion of the fixing plate 51 a to the support member 50 and fixing the substrate holding members 10, 20, 30, 40 with the bolts 51, the substrate holding members 10, 20, 30, 40 are attached to the support member 50. Supported.

固定用板材51aは、図1に示すように、支持部材50に取付けられる基板保持部材10,20,30,40の数だけ支持部材50に設けられる。本実施形態では、基板保持部材10,20,30,40を合計4列備えているため、各支持部材50には、4つの固定用板材51aが備えられる。   As shown in FIG. 1, as many fixing plate members 51 a as the number of substrate holding members 10, 20, 30, and 40 attached to the support member 50 are provided on the support member 50. In this embodiment, since the substrate holding members 10, 20, 30, and 40 are provided in a total of four rows, each support member 50 is provided with four fixing plate members 51 a.

支持部材50は、基板保持部材10,20,30,40の分割数と同数設けられ、回転軸Xを中心に相互に一定の角度間隔を有するように、回転部材60に固定されている。回転部材60と支持部材50は、全体として、傘の骨のような形状を有する。本実施形態では、5つの支持部材50を備えている。
支持部材50の回転部材60側の端部は、回転部材60に固定されている。
The support members 50 are provided in the same number as the number of divisions of the substrate holding members 10, 20, 30, and 40, and are fixed to the rotating member 60 so as to have a constant angular interval with respect to the rotation axis X. The rotating member 60 and the supporting member 50 have a shape like an umbrella bone as a whole. In the present embodiment, five support members 50 are provided.
The end of the support member 50 on the rotating member 60 side is fixed to the rotating member 60.

基板保持部材10,20,30,40は、基板Sを複数保持する部材であり、加工が容易で比較的軽量なアルミニウム製からなる。
図3に示すように、基板保持部材10,20,30,40は、同心異径の環状に形成されている。
基板保持部材10,20,30,40は、それぞれ、周方向に支持部材50の数と同数に分割され、支持部材50の数と同数の保持治具の集合体として構成されている。一つの基板保持部材を構成する複数の保持治具は、同一形状から形成される。
そして、本実施形態において、基板保持部材10,20,30,40は、回転部材60の回転方向においてそれぞれ5分割されているが、これ以外の数で分割されていてもよい。このとき、基板保持部材10,20,30,40は、円周方向において2以上12以下に分割されているとよい。
The substrate holding members 10, 20, 30, and 40 are members that hold a plurality of substrates S, and are made of aluminum that is easy to process and relatively lightweight.
As shown in FIG. 3, the substrate holding members 10, 20, 30 and 40 are formed in an annular shape having concentric and different diameters.
The substrate holding members 10, 20, 30, and 40 are each divided into the same number as the number of support members 50 in the circumferential direction, and are configured as a collection of holding jigs equal to the number of support members 50. The plurality of holding jigs constituting one substrate holding member are formed from the same shape.
In the present embodiment, the substrate holding members 10, 20, 30, and 40 are each divided into five in the rotation direction of the rotating member 60, but may be divided in other numbers. At this time, the substrate holding members 10, 20, 30, and 40 are preferably divided into 2 or more and 12 or less in the circumferential direction.

このように、基板保持部材10,20,30,40が分割されることにより、基板保持部材10,20,30,40が一体で形成された場合と比較して軽量化される。基板保持部材10,20,30,40は、多数の基板Sを載置した状態で作業者が持ち上げることにより支持部材50に取り付けられるため、基板保持部材10,20,30,40を軽量化することにより、基板保持部材10,20,30,40を取り付けやすくなり、作業効率が向上する。   As described above, the substrate holding members 10, 20, 30, and 40 are divided to reduce the weight as compared with the case where the substrate holding members 10, 20, 30, and 40 are integrally formed. The substrate holding members 10, 20, 30, 40 are attached to the support member 50 by being lifted by an operator with a large number of substrates S placed thereon, so that the substrate holding members 10, 20, 30, 40 are reduced in weight. This makes it easier to attach the substrate holding members 10, 20, 30, and 40, and the working efficiency is improved.

一方、基板保持部材10,20,30,40が12よりも多く分割されると、支持部材50に基板保持部材10,20,30,40を固定する作業時間が長くなり、作業効率が低下するため好ましくない。また、各基板保持部材10,20,30,40全体としてみると、基板Sが相互に重ならない部分や、肉厚部11i,11j等に取られる面積が広くなるため、基板保持部材10,20,30,40に積載可能な基板Sの数が少なくなり、1バッチ毎に処理できる基板Sの数が減少して、成膜処理の効率が低下する。   On the other hand, when the substrate holding members 10, 20, 30, and 40 are divided more than 12, the work time for fixing the substrate holding members 10, 20, 30, and 40 to the support member 50 becomes long, and the working efficiency is lowered. Therefore, it is not preferable. Further, when viewed as a whole of each substrate holding member 10, 20, 30, 40, the area where the substrate S does not overlap each other, the area taken by the thick portions 11i, 11j, and the like becomes wider. , 30, 40, the number of substrates S that can be stacked is reduced, the number of substrates S that can be processed per batch is reduced, and the efficiency of the film formation process is reduced.

<保持治具の構成>
保持治具11〜15は、基板保持部材10を構成する要素である。すなわち、基板保持部材10は、平面視円弧状の保持治具11〜15に分割される。
基板保持部材10,20,30,40は、その直径が異なる点で相違するが、その基本構造は略同様である。また、保持治具11〜15は、基板保持部材10を等分したものであり、その構成は互いに同様である。以下では、基板保持部材10を構成する保持治具11について説明する。
<Configuration of holding jig>
The holding jigs 11 to 15 are elements constituting the substrate holding member 10. That is, the substrate holding member 10 is divided into holding jigs 11 to 15 having a circular arc shape in plan view.
The substrate holding members 10, 20, 30, and 40 are different in that their diameters are different, but their basic structures are substantially the same. The holding jigs 11 to 15 are obtained by equally dividing the substrate holding member 10 and have the same configuration. Below, the holding jig 11 which comprises the board | substrate holding member 10 is demonstrated.

保持治具11は、環状に形成される基板保持部材10を構成するものであり、平面視円弧状に形成されている。複数の基板Sは、保持治具11上に載置されることによって基板保持部材10(保持治具11)に保持され、このとき、保持治具11は、隣り合って保持される基板Sの非成膜部分S2の少なくとも一部が互いに重なり合うと共に、成膜部分S1が露出するようにして複数の基板Sを保持する。   The holding jig 11 constitutes the substrate holding member 10 formed in an annular shape, and is formed in an arc shape in plan view. The plurality of substrates S are held on the substrate holding member 10 (holding jig 11) by being placed on the holding jig 11, and at this time, the holding jig 11 is placed next to the substrate S to be held. The plurality of substrates S are held such that at least a part of the non-film-deposited portions S2 overlap each other and the film-formed portions S1 are exposed.

保持治具11は、図4に示すように、断面略コ字状(U字状)の板状部材であり、長さ方向の2辺が回転軸Xを中心とした同心の円弧を描いて湾曲した板体からなる底板部11aと、底板部11aの径方向内側端部から上方に向かって立ち上がる内側立壁部11bと、底板部11aの径方向外側端部から上方に向かって立ち上がる外側立壁部11cと、底板部11aの周方向の両端にそれぞれ設けられた肉厚部11i,11jを備えている。   As shown in FIG. 4, the holding jig 11 is a plate-shaped member having a substantially U-shaped cross section (U shape), and two sides in the length direction draw a concentric arc with the rotation axis X as the center. A bottom plate portion 11a made of a curved plate, an inner standing wall portion 11b that rises upward from the radially inner end portion of the bottom plate portion 11a, and an outer standing wall portion that rises upward from the radially outer end portion of the bottom plate portion 11a. 11c and thick portions 11i and 11j provided at both ends in the circumferential direction of the bottom plate portion 11a.

底板部11aには、保持治具11に1枚目の基板Sを配置するための最下層基板配置部11Aと、最下層基板配置部11Aよりも反時計回り方向に隣接して設けられ、底面が階段状に形成された階段状部11Bと、が形成されている。なお、時計回り方向及び反時計回り方向は、逆であってもよい。この場合は、すべての構成について逆になった鏡像体として構成される。
図4,図5に示すように、最下層基板配置部11A及び階段状部11Bと、内側立壁部11b,外側立壁部11cとの間には、一定の隙間があり、この隙間は、それぞれ、排気溝11k,11mとなっている。
The bottom plate portion 11a is provided adjacent to the lowermost substrate placement portion 11A for placing the first substrate S on the holding jig 11 and in the counterclockwise direction from the lowermost layer substrate placement portion 11A. And a stepped portion 11B formed in a stepped shape. The clockwise direction and the counterclockwise direction may be reversed. In this case, it is configured as an inverted enantiomer for all configurations.
As shown in FIGS. 4 and 5, there is a certain gap between the lowermost substrate placement portion 11A and the stepped portion 11B and the inner standing wall portion 11b and the outer standing wall portion 11c. Exhaust grooves 11k and 11m are formed.

最下層基板配置部11Aは、肉厚部11jと、階段状部11Bの端部と、内側立壁部11bよりも保持治具11の径方向側に設けられた第一の壁部11nと、外側立壁部11cよりも保持治具11の径方向内側に設けられた第二の壁部11oと、により囲まれた領域として構成されている。 Lowermost substrate placement portion 11A includes a thick portion 11j, and the end portion of the stepped portion 11B, a first wall portion 11n provided on the radially outer side of the holding jig 11 than the inner wall part 11b, It is configured as a region surrounded by the second wall portion 11o provided on the radially inner side of the holding jig 11 with respect to the outer standing wall portion 11c.

肉厚部11jは、保持治具11の回転軸Xを中心とした時計回り方向の端部に設けられ、径方向に延びる壁部として形成されている。肉厚部11jは、略周方向に延びる排気溝11jxが、径方向の内側と外側とに合計2つ設けられている。排気溝11jxは、肉厚部11jの周方向の両端まで亘った凹部からなる。   The thick part 11j is provided at the end in the clockwise direction around the rotation axis X of the holding jig 11, and is formed as a wall part extending in the radial direction. The thick portion 11j is provided with two exhaust grooves 11jx extending substantially in the circumferential direction on the inner side and the outer side in the radial direction. The exhaust groove 11jx is composed of a recess extending to both ends in the circumferential direction of the thick portion 11j.

保持治具11は、排気溝11k,11m,11jxを備えることにより、図7のように、複数の基板Sが載置された状態で、基板Sと保持治具11との間にたまる空気を円滑に除去することが可能となり、成膜作業を効率よく行うことができる。
肉厚部11jには、保持治具11の周方向内側が低くなった段差11jsが設けられている。段差11jsは、回転軸X側が保持治具11の時計回り方向の端面に近づくように、同端面に対して傾斜している。段差11jsは、基板Sの端部を当接させることにより、基板Sを位置決め可能にしている。
最下層基板配置部11Aは、階段状部11Bの端部により規定されている。階段状部11Bの端部は、最下層基板配置部11Aに隣接して設けられた階段状部11Bの第一の段差であり、基板Sの厚みと略同じ高さで、最下層基板配置部11Aの底面よりも階段状部11B側が高くなる段差として形成されている。
Since the holding jig 11 includes the exhaust grooves 11k, 11m, and 11jx, the air accumulated between the substrate S and the holding jig 11 in a state where the plurality of substrates S are placed as illustrated in FIG. It can be removed smoothly, and the film forming operation can be performed efficiently.
The thick portion 11j is provided with a step 11js in which the inner side in the circumferential direction of the holding jig 11 is lowered. The step 11js is inclined with respect to the end surface so that the rotation axis X side approaches the end surface of the holding jig 11 in the clockwise direction. The step 11js allows the substrate S to be positioned by bringing the end of the substrate S into contact.
The lowermost substrate placement portion 11A is defined by the end of the stepped portion 11B. The end of the stepped portion 11B is the first step of the stepped portion 11B provided adjacent to the lowermost layer substrate placement portion 11A, and has the same height as the thickness of the substrate S, and the lowermost layer substrate placement portion. It is formed as a step which is higher on the stepped portion 11B side than the bottom surface of 11A.

第一の壁部11nは、内側立壁部11bの若干外周側,すなわち保持治具11の内側に設けられ、肉厚部11jの回転軸X側の端部から連続し、略周方向に向かって延設されている。第一の壁部11nは、肉厚部11j側の端部が、最下層基板配置部11Aの階段状部11B側の端部よりも、若干高く形成され、最初に保持治具11に設置される1枚目の基板Sが、階段状部11B側の端部よりも肉厚部11j側が若干高くなるよう傾斜して設置可能になっている。   The first wall portion 11n is provided slightly on the outer peripheral side of the inner standing wall portion 11b, that is, on the inner side of the holding jig 11, is continuous from the end portion on the rotation axis X side of the thick portion 11j, and substantially toward the circumferential direction. It is extended. The first wall portion 11n is formed such that the end portion on the thick portion 11j side is slightly higher than the end portion on the stepped portion 11B side of the lowermost substrate placement portion 11A, and is first installed on the holding jig 11. The first substrate S can be installed with an inclination so that the thick portion 11j side is slightly higher than the end portion on the stepped portion 11B side.

第二の壁部11oは、外側立壁部11cの若干内周側,すなわち保持治具11の内側に設けられ、肉厚部11jの回転軸X逆側の端部から連続し、略周方向に向かって延設されている。
第二の壁部11oには、図4に示すように、肉厚部11j側が高くなった段差部11osが形成され、この段差部11osに基板Sの端部を当接させることにより、基板Sを位置決め可能に形成されている。
第二の壁部11oは、肉厚部11j側の端部が、最下層基板配置部11Aの階段状部11B側の端部よりも、若干高く形成され、最初に保持治具11に設置される1枚目の基板Sが、階段状部11B側の端部よりも肉厚部11j側が若干高くなるよう傾斜して設置可能になっている。
The second wall portion 11o is provided slightly on the inner peripheral side of the outer standing wall portion 11c, that is, on the inner side of the holding jig 11, and is continuous from the end portion on the opposite side of the rotation axis X of the thick portion 11j. It is extended toward.
As shown in FIG. 4, the second wall portion 11o is formed with a stepped portion 11os having an increased thickness on the thick portion 11j side, and the substrate S is brought into contact with the stepped portion 11os by contacting the end portion of the substrate S. It is formed so that it can be positioned.
The second wall portion 11o is formed such that the end portion on the thick portion 11j side is slightly higher than the end portion on the stepped portion 11B side of the lowermost layer substrate placement portion 11A, and is first installed on the holding jig 11. The first substrate S can be installed with an inclination so that the thick portion 11j side is slightly higher than the end portion on the stepped portion 11B side.

また、最下層基板配置部11Aの肉厚部11jと、階段状部11Bの端部と、第一の壁部11nと、第二の壁部11oと、により囲まれた領域の底面は、保持治具11に最初に設置される1枚目の基板Sの下面に当接して支持する支持面11g1と、支持面11g1よりも低く形成された凹面11g2とから構成されている。
支持面11g1は、若干肉厚部11j側が高くなった傾斜面として構成されている。支持面11g1の階段状部11B側の端部に近い位置で、保持治具11の径方向の中央には、保持治具11に設置される1枚目の基板Sの成膜部分S1を成膜源4に対して露出させるための開口部11fが形成されている。
凹面11g2は、保持治具11に最初に設置される1枚目の基板Sの下面よりも低い位置に形成され、基板Sとの間に空間が形成されるようになっている。凹面11g2には、膜厚等の測定を行うため、開口した窓部11hが形成されている。
Further, the bottom surface of the region surrounded by the thick part 11j of the lowermost layer substrate arrangement part 11A, the end part of the stepped part 11B, the first wall part 11n, and the second wall part 11o is held. It comprises a support surface 11g1 that contacts and supports the lower surface of the first substrate S that is initially placed on the jig 11, and a concave surface 11g2 that is formed lower than the support surface 11g1.
The support surface 11g1 is configured as an inclined surface that is slightly higher on the thick portion 11j side. At the position near the end of the support surface 11g1 on the stepped portion 11B side, the film forming portion S1 of the first substrate S installed on the holding jig 11 is formed at the center in the radial direction of the holding jig 11. An opening 11 f is formed to be exposed to the film source 4.
The concave surface 11g2 is formed at a position lower than the lower surface of the first substrate S that is initially placed on the holding jig 11, and a space is formed between the concave surface 11g2. An open window portion 11h is formed on the concave surface 11g2 in order to measure the film thickness and the like.

凹面11g2は、保持治具11に最初に載置される基板Sの表面が、肉厚部11jとの摩擦によって損傷することを防ぐ役割を果たす。したがって、基板Sを損傷することによる歩留まりの低下を抑制でき、より効率よく薄膜を形成することが可能となる。   The concave surface 11g2 serves to prevent the surface of the substrate S initially placed on the holding jig 11 from being damaged by friction with the thick portion 11j. Therefore, a decrease in yield due to damage to the substrate S can be suppressed, and a thin film can be formed more efficiently.

階段状部11Bは、保持治具11に設置される2枚目以降の基板Sを、少しずつずらしながら積層して保持する部分であり、2枚目以降の基板Sの成膜部分S1の近傍を支持する複数の保持面11dと、保持面11dの間に設けられた段差部11eと、を備えている。
保持面11dは、階段状部11Bの径方向の全長に亘って延びる平面であり、隣り合う一対の段差部11eの間に形成されている。保持面11dは、支持面11g1と平行な面であり、隣接する一対の段差部11eのうち、一段高い位置にある保持面11dとの間の段差部11e側が低くなるように傾斜している。保持面11dは、階段状部11Bの内周側の端部から外周側の端部まで延びており、外周側に対比して内周側が若干狭くなった平面視略矩形状に構成されている。保持面11dは、保持治具11に設置される基板Sの数より1小さい数設けられている。
The stepped portion 11B is a portion that holds the second and subsequent substrates S installed on the holding jig 11 while being shifted little by little, and is in the vicinity of the film-forming portion S1 of the second and subsequent substrates S. A plurality of holding surfaces 11d for supporting the step, and a step portion 11e provided between the holding surfaces 11d.
The holding surface 11d is a plane that extends over the entire length of the stepped portion 11B in the radial direction, and is formed between a pair of adjacent step portions 11e. The holding surface 11d is a surface parallel to the support surface 11g1 and is inclined so that the stepped portion 11e side between the adjacent stepped portion 11e and the holding surface 11d located at the one step higher level is lowered. The holding surface 11d extends from the end on the inner peripheral side of the stepped portion 11B to the end on the outer peripheral side, and is configured in a substantially rectangular shape in plan view with the inner peripheral side slightly narrower than the outer peripheral side. . The holding surface 11d is provided in a number one smaller than the number of substrates S installed on the holding jig 11.

保持面11dには、基板Sの成膜部分S1を成膜源4に対して露出させるための平面視真円からなる開口部11fが形成されている。開口部11fは、内側立壁部11b及び外側立壁部11cと同心の円弧上に載るように並んで形成されている。なお、開口部11fの形状は、基板Sの成膜部分S1の形状に依存して決定されるものであり、真円以外の形状であってもよいのは勿論である。   The holding surface 11 d is formed with an opening 11 f that is a perfect circle in plan view for exposing the film forming portion S 1 of the substrate S to the film forming source 4. The opening portion 11f is formed side by side so as to be placed on an arc concentric with the inner standing wall portion 11b and the outer standing wall portion 11c. Note that the shape of the opening 11f is determined depending on the shape of the film forming portion S1 of the substrate S, and it is needless to say that the shape may be other than a perfect circle.

このように、保持治具11の保持面11dに開口部11fが形成されていることにより、保持治具11がマスクの役割を果たす。したがって、保持治具11以外に基板Sを覆う部材を別に設ける必要がない。また、開口部11fの形状は適宜変更できるので、成膜部分S1の形状、大きさを緻密に制御することが容易となる。   As described above, since the opening 11f is formed in the holding surface 11d of the holding jig 11, the holding jig 11 serves as a mask. Therefore, it is not necessary to separately provide a member for covering the substrate S other than the holding jig 11. In addition, since the shape of the opening 11f can be changed as appropriate, it is easy to precisely control the shape and size of the film forming portion S1.

段差部11eは、保持治具11に設置される2枚目以降の基板Sのそれぞれの反時計回り方向の端部に当接して位置決めするものであり、隣り合う一対の保持面11dの間に形成されている。段差部11eは、時計回り方向が低くなった段差からなる。段差部11eは、階段状部11Bの内周側の端部から外周側の端部まで、平面視直線状に伸びている。   The step portion 11e is positioned in contact with the end portions in the counterclockwise direction of each of the second and subsequent substrates S installed on the holding jig 11, and is positioned between a pair of adjacent holding surfaces 11d. Is formed. The step portion 11e is a step having a lower clockwise direction. The step portion 11e extends in a straight line shape in plan view from the inner peripheral end of the stepped portion 11B to the outer peripheral end.

保持治具11は、水平面に対し、一端側が他端側と比較して高くなるように若干傾斜した保持面11dと、その保持面11dの高くなった部分から一段下がるように形成される段差部11eとを交互に連続して備えることにより、保持面11dに形成された開口部11fと、成膜源4との距離を均一にすることができるため、複数の基板Sに対して同様の条件で成膜することができ、均一な膜厚で成膜することができる。
段差部11eは、図5に示すように、径方向R−Rに対して角度を持って傾斜している。
The holding jig 11 has a holding surface 11d that is slightly inclined with respect to a horizontal plane so that one end side is higher than the other end side, and a step portion formed so as to be lowered by one step from the raised portion of the holding surface 11d. 11e are alternately and continuously provided so that the distance between the opening 11f formed in the holding surface 11d and the film forming source 4 can be made uniform. The film can be formed with a uniform film thickness.
As shown in FIG. 5, the step portion 11 e is inclined with an angle with respect to the radial direction RR.

段差部11eの高さは、基板Sの厚みと比較して0.05mm以上高く形成されている。より詳細には、段差部11eは、0.05mm以上0.1mm以下の範囲で基板Sの厚みよりも高くなるように形成されている。
このように、段差部11eが基板Sの厚みよりも若干高く形成されていることにより、段差部11eに対して基板Sの端部を当接させやすくすることができる。さらに、保持面11dに基板Sを保持させた際、段差部11eの高さによって重なり合う基板S同士が若干隙間を開けて重ねられるため、基板Sの表面が互いに接触しにくくなり、摩擦により基板Sの表面が損傷するのを抑制することができる。
The height of the stepped portion 11e is higher than the thickness of the substrate S by 0.05 mm or more. More specifically, the step portion 11e is formed to be higher than the thickness of the substrate S in the range of 0.05 mm to 0.1 mm.
As described above, since the step portion 11e is formed slightly higher than the thickness of the substrate S, the end portion of the substrate S can be easily brought into contact with the step portion 11e. Further, when the substrate S is held on the holding surface 11d, the overlapping substrates S are stacked with a slight gap depending on the height of the stepped portion 11e, so that the surfaces of the substrates S are difficult to contact each other, and the substrate S is caused by friction. It is possible to prevent the surface of the substrate from being damaged.

段差部11eの高さと基板Sの厚みとの差が0.05mmよりも小さいと、基板S同士が接触しやすくなるため、好ましくない。また、段差部11eの高さと基板Sの厚みとの差が0.1mmよりも大きいと、複数の基板Sに対して均一な薄膜を形成しにくくなるため、好ましくない。
保持治具11の周方向両端の径方向両端の合計4か所には、図7に示すように、図1の固定用板材51aに保持治具11を取り付けるための取付孔11p,11qがそれぞれ形成されている。
If the difference between the height of the stepped portion 11e and the thickness of the substrate S is smaller than 0.05 mm, the substrates S are likely to come into contact with each other, which is not preferable. Further, if the difference between the height of the stepped portion 11e and the thickness of the substrate S is larger than 0.1 mm, it is difficult to form a uniform thin film on the plurality of substrates S, which is not preferable.
As shown in FIG. 7, attachment holes 11p and 11q for attaching the holding jig 11 to the fixing plate 51a shown in FIG. 1 are respectively provided at a total of four radial ends at both ends in the circumferential direction of the holding jig 11. Is formed.

成膜源4は、一般的な蒸着装置からなり、円筒形のハースライナーが複数個設けられ、これらハースライナーが円盤状ハースの同心円状の窪みに配設されてなる。成膜源4は、真空容器1の内部下側に配設され、基板Sにむけて薄膜材料を放出する。図1では、便宜上、一つのハースライナーのみを成膜源4として図示している。   The film forming source 4 is composed of a general vapor deposition apparatus, and a plurality of cylindrical hearth liners are provided, and these hearth liners are arranged in concentric recesses of a disk-shaped hearth. The film formation source 4 is disposed on the lower side inside the vacuum vessel 1 and emits a thin film material toward the substrate S. In FIG. 1, for convenience, only one hearth liner is illustrated as the film formation source 4.

成膜源4は、電子銃により蒸発される装置に限定されず、例えば抵抗加熱により薄膜材料を蒸発させる装置でもよい。また、基板S上に形成される薄膜の種類や数に依存して、成膜源4の数や配置を適宜変更可能である。
また、例えば、イオンアシスト法により蒸着を行う場合は、正のイオンを基板Sに向けて照射するイオン源、正に帯電した基板Sや基板保持機構3に電子ビームを照射して電荷の中和を行うニュートラライザ等を備えていてもよい。
The film forming source 4 is not limited to an apparatus that is evaporated by an electron gun, and may be an apparatus that evaporates a thin film material by resistance heating, for example. Further, depending on the type and number of thin films formed on the substrate S, the number and arrangement of the film forming sources 4 can be changed as appropriate.
Further, for example, when vapor deposition is performed by an ion assist method, neutralization of charges is performed by irradiating an electron beam to an ion source that irradiates positive ions toward the substrate S, a positively charged substrate S or the substrate holding mechanism 3. A neutralizer or the like may be provided.

成膜中は、成膜源4の温度は非常に高温になるため、基板Sが加熱されて変形することを抑制するため、公知の基板冷却手段が基板保持機構3の近傍に備えられていてもよい。この基板冷却手段は、基板Sが樹脂製である時、特に有効である。
なお、本実施形態の薄膜形成装置100は、真空蒸着法により薄膜形成を行う装置であるが、スパッタ装置に本発明を適用してもよい。
During film formation, since the temperature of the film formation source 4 becomes very high, a known substrate cooling means is provided in the vicinity of the substrate holding mechanism 3 in order to prevent the substrate S from being heated and deformed. Also good. This substrate cooling means is particularly effective when the substrate S is made of resin.
In addition, although the thin film forming apparatus 100 of this embodiment is an apparatus which forms a thin film by a vacuum evaporation method, you may apply this invention to a sputtering device.

<基板の構成>
図2に示すように、基板Sは、4つの角がR形状になった平面視長方形の平板からなり、下面に薄膜が形成される成膜部分S1と、薄膜が形成されない非成膜部分S2とを備えている。
成膜部分S1は、基板Sの二つの対向する短辺のうち、一方の短辺の近傍で、一方の短辺から若干内側に離間して、基板Sの長尺方向に垂直な方向の中心に形成される。本実施形態では、成膜部分S1は真円状の例を示すが、他の形状であってもよい。
<Board configuration>
As shown in FIG. 2, the substrate S is formed of a rectangular flat plate with four corners having an R shape, and a film forming portion S1 where a thin film is formed on the lower surface and a non-film forming portion S2 where no thin film is formed. And.
The film forming portion S1 is the center in the direction perpendicular to the longitudinal direction of the substrate S, in the vicinity of one of the two opposing short sides of the substrate S, slightly spaced from the short side. Formed. In the present embodiment, the film forming portion S1 is an example of a perfect circle, but may be another shape.

基板Sは、厚み0.3〜0.5mm程度のガラス製の板材であり、表面に、装飾等の目的から、予め印刷等の手法により薄膜が形成されていてもよい。なお、本明細書中、「成膜部分S1」とは、薄膜形成装置100で薄膜が形成される特定の領域を指すものであり、予め薄膜が形成された部分を指すものではない。
また、本実施形態では基板Sの形状として矩形の平板状のものを用いているが、これに限定されず、各種改変することができることは勿論である。
The substrate S is a glass plate having a thickness of about 0.3 to 0.5 mm, and a thin film may be formed on the surface in advance by a technique such as printing for the purpose of decoration or the like. In the present specification, the “film forming portion S1” refers to a specific region where a thin film is formed by the thin film forming apparatus 100, and does not refer to a portion where a thin film has been formed in advance.
In the present embodiment, a rectangular flat plate is used as the shape of the substrate S. However, the present invention is not limited to this, and various modifications can be made.

<基板の設置>
保持治具11には、段差部11eと同数の基板Sが設置される。
1枚目の基板Sは、図6に示すように、一方の短い辺が段差11jsに、他方が、最も時計回り方向側にある段差部11eに当接し、一方の長い辺の中央が内側立壁部11bの保持治具11の径方向内側の面に当接し、他方の長い辺の両端部が外側立壁部11cの保持治具11の径方向外側の面に当接するように配置される。このとき、基板Sは、段差部11e側の端部が段差11js側の端部よりも低くなるように傾斜している。
<Installation of substrate>
The holding jig 11 is provided with the same number of substrates S as the stepped portion 11e.
As shown in FIG. 6, in the first substrate S, one short side is in contact with the step 11js, the other is in contact with the step 11e on the most clockwise side, and the center of one long side is the inner vertical wall. It arrange | positions so that it may contact | abut to the surface of the holding jig 11 of the part 11b at the radial inside, and the both ends of the other long side may contact the surface of the outer standing wall part 11c of the holding jig 11 at the radial direction. At this time, the substrate S is inclined such that the end on the step 11e side is lower than the end on the step 11js side.

2枚目以降の基板Sは、図7に示すように、順次、1枚前に設置された基板Sと一部を重ねた状態で、設置される。
2枚目以降の基板Sは、一方の短い辺が、1枚前に設置された基板S上に、隣り合う段差部11eの距離分反時計回り方向にずれた位置に配置され、他方が、段差部11eに当接し、一方の長い辺の中央が内側立壁部11bの保持治具11の径方向内側の面に当接し、他方の長い辺の両端部が外側立壁部11cの保持治具11の径方向外側の面に当接するように配置される。
最後に設置される基板Sは、短い辺のうち反時計回り方向にある方の辺が、肉厚部11iに当接する。
As shown in FIG. 7, the second and subsequent substrates S are sequentially installed in a state of being partially overlapped with the substrate S that has been previously installed.
In the second and subsequent substrates S, one short side is arranged on the substrate S that is installed one before, at a position shifted in the counterclockwise direction by the distance of the adjacent stepped portion 11e, and the other is Abutting on the stepped portion 11e, the center of one long side abuts on the radially inner surface of the holding jig 11 of the inner standing wall portion 11b, and both ends of the other long side are holding jigs 11 of the outer standing wall portion 11c. It arrange | positions so that it may contact | abut to the surface of the radial direction outer side.
The substrate S to be installed last comes into contact with the thick portion 11i at the side of the short side that is in the counterclockwise direction.

このように、基板Sの端部が、段差部11e,内側立壁部11b,外側立壁部11c,段差11js,肉厚部11iに当接して保持されるため、基板Sは、保持治具11上で容易に且つ安定して固定され、その保持位置がずれてしまうことがない。
このように設置された基板Sは、図8,図9に示すように、段差部11e側の端部が他方の端部よりも低くなるように傾斜している。
設置された複数の基板Sのうち、先に設置された基板Sと重なっていない部分の下面は、保持面11dに当接し、保持面11dに設けられた開口部11fから、基板Sの下面が保持治具11下方に露出する。この露出した部分は、成膜部分S1として、成膜源4による成膜処理が施される。
Thus, since the edge part of the board | substrate S is contact | abutted and hold | maintained at the level | step-difference part 11e, the inner side standing wall part 11b, the outer side standing wall part 11c, the level | step difference 11js, and the thick part 11i, the board | substrate S is on the holding jig 11. It is easily and stably fixed and the holding position is not shifted.
As shown in FIGS. 8 and 9, the substrate S placed in this way is inclined so that the end portion on the stepped portion 11 e side is lower than the other end portion.
Of the plurality of installed substrates S, the lower surface of the portion that does not overlap the previously installed substrate S abuts on the holding surface 11d, and the lower surface of the substrate S is opened from the opening 11f provided on the holding surface 11d. It is exposed below the holding jig 11. The exposed portion is subjected to film forming processing by the film forming source 4 as a film forming portion S1.

一つの保持面11dには、1枚の基板Sが保持される。保持治具11に基板Sを順に重ねていくことにより、複数の基板Sは、互いにその一部が重なり、それ以外の部分がずれた状態で保持される。
保持面11dの面積は、基板Sの面積よりも小さく形成されており、隣り合う基板Sの非成膜部分S2が互いに重なるようにして、保持治具11が基板Sを保持する。
One substrate S is held on one holding surface 11d. By sequentially stacking the substrates S on the holding jig 11, the plurality of substrates S are held in a state in which some of them overlap each other and other portions are shifted.
The area of the holding surface 11d is formed to be smaller than the area of the substrate S, and the holding jig 11 holds the substrate S so that the non-film forming portions S2 of the adjacent substrates S overlap each other.

隣接する基板Sは、同じ方向にある短い辺が、相互に平行ではなく、0°以上90°以下の角度を持っている。保持治具11が円弧状に湾曲したものであり、このように構成しているため、より多くの基板Sを基板保持部材10に保持させることができる。   In adjacent substrates S, short sides in the same direction are not parallel to each other but have an angle of 0 ° to 90 °. Since the holding jig 11 is curved in an arc shape and configured in this manner, a larger number of substrates S can be held by the substrate holding member 10.

矩形状の基板Sは、保持治具11に、以下の関係となるように保持される。図7において、矩形状の基板Sの長い辺のうち、径方向内側の長い辺の長さをLとし、この長い辺の中心点から、保持治具11が描く円弧の中心点である回転軸Xまでの距離をrとしたとき、距離rに対する長さLの半分の長さ、すなわち(L/2)/r(後述のθ1におけるtanθ1の値)は、0.05以上、0.75以下となるように保持治具11が形成されている。   The rectangular substrate S is held by the holding jig 11 so as to have the following relationship. In FIG. 7, among the long sides of the rectangular substrate S, the length of the long side radially inside is L, and the rotation axis that is the center point of the arc drawn by the holding jig 11 from the center point of the long side When the distance to X is r, the length half the length L with respect to the distance r, that is, (L / 2) / r (the value of tan θ1 in θ1 described later) is 0.05 or more and 0.75 or less. A holding jig 11 is formed so that

換言すると、図7のように、基板Sの径方向内側の長い辺の中心点と回転軸Xを通る直線と、基板Sの頂点のうち、径方向内側に配置される頂点と回転軸Xを通る直線とが成す角度をθ1としたとき、θ1は、2.9°以上、36.9°以下である。なお、角度θ1は、径方向内側の長い辺の中心点と回転軸Xを通る直線と、基板Sの頂点のうち、径方向内側に配置される頂点と回転軸Xとを通る直線とが成す鋭角を示す。   In other words, as shown in FIG. 7, among the straight line passing through the center point of the long side on the radially inner side of the substrate S and the rotation axis X, and the vertex of the substrate S and the rotation axis X on the radially inner side, When the angle formed by the straight line passing through is θ1, θ1 is not less than 2.9 ° and not more than 36.9 °. The angle θ1 is formed by a straight line passing through the center point of the long side on the radially inner side and the rotation axis X and a straight line passing through the vertex arranged on the radially inner side and the rotation axis X among the vertices of the substrate S. Indicates an acute angle.

基板保持部材10を構成する保持治具11〜15だけでなく、それぞれ直径が異なる基板保持部材20,30,40を構成するすべての保持治具が、この関係を満たすように形成されている。これにより、基板保持部材10,20,30,40は多数の基板Sを保持することができる。tanθ1及びθ1の値を上記関係とすることにより、一括で大量の基板Sを処理可能となり、薄膜形成作業を極めて効率よく行うことが可能となる。   Not only the holding jigs 11 to 15 constituting the substrate holding member 10, but also all holding jigs constituting the substrate holding members 20, 30, 40 having different diameters are formed so as to satisfy this relationship. Accordingly, the substrate holding members 10, 20, 30, and 40 can hold a large number of substrates S. By setting the values of tan θ1 and θ1 to the above relationship, a large amount of substrates S can be processed at a time, and the thin film forming operation can be performed very efficiently.

保持治具11〜15及び基板保持部材20,30,40を構成する各保持治具は、支持部材50に取り付けられた固定用板材51aの板部にボルト51でボルト締めすることにより、図1,図3に示すように設置される。
このとき、基板保持部材10,20,30,40は環状に形成され、その中心が、回転部材60の回転軸X上となるように支持部材50によって支持される。そして、基板保持部材10,20,30,40は、最も内側の基板保持部材40から、外側へ向かって基板保持部材30,20,10の順で次第に低くなるようにして、支持部材50に支持されている。
The holding jigs constituting the holding jigs 11 to 15 and the substrate holding members 20, 30, and 40 are bolted to the plate portion of the fixing plate material 51 a attached to the support member 50 with bolts 51. , Installed as shown in FIG.
At this time, the substrate holding members 10, 20, 30, and 40 are formed in an annular shape, and are supported by the support member 50 so that the center thereof is on the rotation axis X of the rotation member 60. The substrate holding members 10, 20, 30, 40 are supported by the support member 50 such that the substrate holding members 30, 20, 10 are gradually lowered from the innermost substrate holding member 40 toward the outside. Has been.

それぞれ異なる径を備えた基板保持部材10,20,30,40は、互いにその一部が上下方向で重なるようにして階段状に配設される。基板保持部材10,20,30の内側端部が、基板保持部材10,20,30のそれぞれ一段内側に配設される基板保持部材20,30,40の外側端部よりも径方向内側に配設されている。   The substrate holding members 10, 20, 30, and 40 having different diameters are arranged in a stepped manner so that a part thereof overlaps in the vertical direction. The inner ends of the substrate holding members 10, 20, and 30 are arranged radially inward from the outer ends of the substrate holding members 20, 30, and 40 disposed on the inner side of the substrate holding members 10, 20, and 30, respectively. It is installed.

なお、本実施形態では、基板保持部材10,20,30,40として、径方向上で4つの基板保持部材を備えた構成を例に示したが、これ以外の数としてもよいのは勿論である。このように、径方向上で隣り合う基板保持部材の数を複数とすることにより、成膜される基板Sの数を増やすことができ、成膜作業を効率よく行うことができる。   In the present embodiment, the substrate holding members 10, 20, 30, and 40 are shown as an example of a configuration in which four substrate holding members are provided in the radial direction. However, other numbers may be used as a matter of course. is there. Thus, by making the number of substrate holding members adjacent in the radial direction plural, the number of substrates S to be formed can be increased, and the film forming operation can be performed efficiently.

<基板保持部材の位置関係>
図10を参照して、基板保持部材10,20,30,40の相互の位置関係について説明する。図10は、基板保持部材10,20,30,40が固定された支持部材50と成膜源4との位置関係を示す説明図である。
<Position relationship of substrate holding member>
With reference to FIG. 10, the mutual positional relationship of the substrate holding members 10, 20, 30, and 40 will be described. FIG. 10 is an explanatory diagram showing the positional relationship between the support member 50 to which the substrate holding members 10, 20, 30 and 40 are fixed and the film forming source 4.

基板保持部材10,20,30,40は、基板保持機構3がドーム状に形成され、下方に配設される基板保持部材ほど、その直径が大きくなるように形成されている。基板Sの成膜部分S1を露出する開口部11f,21f,31f,41fは、回転部材60の回転軸Xを軸とする仮想ドーム表面上に位置し、基板S上に均一な厚さの薄膜を形成可能としている。
なお、図10では、開口部11f,21f,31f,41fが載る仮想ドームが円錐台形状のものを例として示したが、所定の曲率の半球状ドームの表面上に開口部11f,21f,31f,41fが配置されていてもよい。
The substrate holding members 10, 20, 30, and 40 are formed such that the substrate holding mechanism 3 is formed in a dome shape, and the diameter of the substrate holding member disposed below is larger. The openings 11f, 21f, 31f, and 41f that expose the film forming portion S1 of the substrate S are located on the surface of the virtual dome with the rotation axis X of the rotating member 60 as an axis, and a thin film having a uniform thickness on the substrate S. Can be formed.
In FIG. 10, the virtual dome on which the openings 11f, 21f, 31f, and 41f are mounted is shown as an example of a truncated cone shape. However, the openings 11f, 21f, and 31f are formed on the surface of the hemispherical dome having a predetermined curvature. , 41f may be arranged.

また、基板保持部材10,20,30,40の保持面(11d等)は、水平な状態に限定されず、保持面(11d等)と、回転軸Xとが成す角度は、可変となるように構成されていてもよい。なお、図10では、基板保持部材10のみの保持面11dと回転軸Xとの間の角度が可変である構成を図示しているが、基板保持部材20,30,40もまた、同様に同角度を可変としてもよい。   Further, the holding surfaces (11d, etc.) of the substrate holding members 10, 20, 30, 40 are not limited to a horizontal state, and the angle formed between the holding surface (11d, etc.) and the rotation axis X is variable. It may be configured. 10 shows a configuration in which the angle between the holding surface 11d of only the substrate holding member 10 and the rotation axis X is variable, the substrate holding members 20, 30, and 40 are also the same. The angle may be variable.

このとき、基板Sの成膜部分S1の中心点及び成膜源4のハースライナーの端部を通る第1の仮想線V1と、成膜部分S1の中心点の垂線Pとが成す角度θ2が0°以上45°以下の鋭角であると好適である。なお、図10では、簡略化のため、基板保持部材10上に備えられる複数の基板Sのうち、開口部11fに臨むように載置された基板Sのみを図示している。   At this time, an angle θ2 formed by the first virtual line V1 passing through the center point of the film forming portion S1 of the substrate S and the end of the hearth liner of the film forming source 4 and the perpendicular P of the center point of the film forming portion S1 is An acute angle of 0 ° to 45 ° is preferred. In FIG. 10, for simplification, only the substrate S placed so as to face the opening 11 f is illustrated among the plurality of substrates S provided on the substrate holding member 10.

θ2が45°よりも大きいと、成膜部分S1に薄膜材料が斜めに入射するため、形成される薄膜の密度が低くなり、薄膜の屈折率が低下する。その結果、基板S上に形成される薄膜において、所望の分光特性が得られにくくなる。   If θ2 is greater than 45 °, the thin film material is obliquely incident on the film forming portion S1, so that the density of the formed thin film is lowered and the refractive index of the thin film is lowered. As a result, it is difficult to obtain desired spectral characteristics in the thin film formed on the substrate S.

角度θ2を0°以上45°以下とすることにより、基板S上に形成される薄膜の厚さを制御しやすく、複数の基板においてより均一な膜厚の薄膜を形成することができる。
なお、図10では、基板保持部材10のみが保持面11dを水平面に対して傾斜した状態で配設された構成を図示しているが、その他の基板保持部材20,30,40もまた、同様に傾斜した状態としてもよいのは勿論である。
By setting the angle θ2 to 0 ° or more and 45 ° or less, the thickness of the thin film formed on the substrate S can be easily controlled, and a thin film having a more uniform thickness can be formed on a plurality of substrates.
10 shows a configuration in which only the substrate holding member 10 is disposed with the holding surface 11d inclined with respect to the horizontal plane, the other substrate holding members 20, 30, 40 are also the same. Of course, it may be in a state of being inclined.

径方向内側に配設される基板保持部材20,30,40の開口部21f,31f,41fは、少なくとも、径方向外側に隣り合って配設される基板保持部材10,20,30の径方向内側の端部よりも内側に配設される。   The openings 21f, 31f, 41f of the substrate holding members 20, 30, 40 disposed on the radially inner side are at least the radial directions of the substrate holding members 10, 20, 30 disposed adjacent to the radially outer side. It arrange | positions inside the edge part inside.

そして、径方向で互いに隣り合って配設される基板保持部材20,30,40と基板保持部材10,20,30は、内側の基板保持部材20,30,40に形成された開口部21f,31f,41fが、成膜源4に対し、外側の基板保持部材10,20,30の径方向内側端部によって遮蔽されず露出する位置に配設される。この構成とすることにより、基板S上に形成される薄膜の膜厚を一定とすることができる。 Then, the substrate holding member 20, 30, 40 and the substrate holding member disposed adjacent to each other in the radial direction 10, 20 and 30 has an opening 21f formed in the substrate holding member 20, 30, 40 of the inner side , 31f, 41f are disposed at positions exposed to the film forming source 4 without being shielded by the radially inner ends of the outer substrate holding members 10, 20, 30. By setting it as this structure, the film thickness of the thin film formed on the board | substrate S can be made constant.

より詳細には、径方向で互いに隣り合って配設される基板保持部材20,30,40と基板保持部材10,20,30は、側面視において、内側の基板保持部材20,30,40に形成された開口部21f,31f,41fの外周端部と成膜源4とを通る第2の仮想線V2に対し、外側の基板保持部材10,20,30の径方向内側端部が側面視で20mm以上離れた位置で配設される。なお、図10では、V2,V3は、基板保持部材20,30についてのみ図示している。   More specifically, the substrate holding members 20, 30, 40 and the substrate holding members 10, 20, 30 that are disposed adjacent to each other in the radial direction are connected to the inner substrate holding members 20, 30, 40 in a side view. The radially inner ends of the outer substrate holding members 10, 20, 30 are side-viewed with respect to the second imaginary line V <b> 2 that passes through the outer peripheral ends of the formed openings 21 f, 31 f, 41 f and the film forming source 4. In a position separated by 20 mm or more. In FIG. 10, V2 and V3 are shown only for the substrate holding members 20 and 30.

すなわち、図10において、径方向に隣り合って配設される基板保持部材20,30,40と基板保持部材10,20,30のうち、径方向内側に配設される基板保持部材20,30,40の開口部21f,31f,41fの基板保持部材20,30,40の径方向外側に位置する端部及び、成膜源4のハースライナーの径方向の外側端部を通る直線を仮想線V2とし、仮想線V2に対して平行で、且つ、基板保持部材20,30,40の外側に配設される基板保持部材10,20,30の内側立壁部11b等の上端部を通る直線を仮想線V3とするとき、仮想線V2と仮想線V3の間の距離Iが、20mm以上となるとよい。   That is, in FIG. 10, among the substrate holding members 20, 30, 40 and the substrate holding members 10, 20, 30 arranged adjacent to each other in the radial direction, the substrate holding members 20, 30 arranged on the radially inner side. , 40 of the opening portions 21f, 31f, 41f of the substrate holding members 20, 30, 40, and the straight line passing through the radially outer end of the hearth liner of the film forming source 4 V2 is a straight line that is parallel to the imaginary line V2 and passes through the upper ends of the inner standing wall portions 11b of the substrate holding members 10, 20, and 30 disposed outside the substrate holding members 20, 30, and 40. When the virtual line V3 is used, the distance I between the virtual line V2 and the virtual line V3 is preferably 20 mm or more.

直径の異なる基板保持部材10,20,30,40が同心円状に配設された基板保持機構3において、基板S上に形成される薄膜の厚さは、互いに隣り合って配設される基板保持部材10,20,30,40の影響を受けやすいが、このように構成しているため、形成される薄膜の厚さが、外側の基板保持部材10,20,30の影響を受けにくくなり、膜厚をより均一にすることができる。   In the substrate holding mechanism 3 in which the substrate holding members 10, 20, 30, and 40 having different diameters are arranged concentrically, the thickness of the thin film formed on the substrate S is the substrate holding arranged adjacent to each other. Although it is easily affected by the members 10, 20, 30, and 40, since it is configured in this way, the thickness of the thin film formed is less affected by the outer substrate holding members 10, 20, and 30, The film thickness can be made more uniform.

基板Sを保持治具11に載置する手順は、以下の通りである。
まず、1枚目の基板Sを、凹面11g2を覆い、短い辺の一方が肉厚部11jの段差11jsに当接し、他方が、最も肉厚部11jに近い段差部11eに当接するように載置する。
The procedure for placing the substrate S on the holding jig 11 is as follows.
First, the first substrate S is covered so that the concave surface 11g2 is covered, and one of the short sides is in contact with the step 11js of the thick portion 11j, and the other is in contact with the step 11e closest to the thick portion 11j. Put.

次に、2枚目の基板Sを1枚目の基板Sの上に重ね、1枚目の基板Sが当接した段差部11eの隣で、反時計回り方向にある段差部11eに反時計回り方向にある短い辺の端部を当接させる。このとき、2枚目の基板Sの成膜部分S1は、1枚目の基板Sに対して重ならず、かつ2枚目の基板Sの非成膜部分S2が1枚目の基板Sに重なるようにする。   Next, the second substrate S is overlaid on the first substrate S, and next to the step portion 11e with which the first substrate S abuts, the step portion 11e in the counterclockwise direction is counterclockwise. The end of the short side in the rotating direction is brought into contact. At this time, the film-forming portion S1 of the second substrate S does not overlap the first substrate S, and the non-film-forming portion S2 of the second substrate S becomes the first substrate S. Make sure they overlap.

上記のような手順で複数の基板Sを保持治具11に順次載置して、図7〜図9の状態にした後、保持治具11を、ボルト51により固定用板材51aに固定する。これにより、保持治具11の支持部材50への取付が完了する。同様の手順で、保持治具12〜15と、基板保持部材20,30,40の支持部材50への取付を行う。これにより、図3の基板保持機構3の各基板保持部材10,20,30,40に基板Sが載置された状態となる。
その後、基板Sが載置された基板保持機構3を、真空容器1内へ導入し、薄膜形成を行う。
このように、保持治具11は、成膜部分S1のみを成膜源4に対して露出して保持することができるため、成膜部分S1及び非成膜部分S2を備えた基板Sを、一括で、大量に生産することができる。したがって、成膜作業に必要な時間を短縮することができ、成膜作業における費用の削減が可能となる。
After the plurality of substrates S are sequentially placed on the holding jig 11 in the above-described procedure to obtain the state shown in FIGS. 7 to 9, the holding jig 11 is fixed to the fixing plate material 51 a with the bolts 51. Thereby, the attachment of the holding jig 11 to the support member 50 is completed. The holding jigs 12 to 15 and the substrate holding members 20, 30, 40 are attached to the support member 50 in the same procedure. Thereby, the substrate S is placed on the substrate holding members 10, 20, 30, and 40 of the substrate holding mechanism 3 of FIG.
Thereafter, the substrate holding mechanism 3 on which the substrate S is placed is introduced into the vacuum vessel 1 to form a thin film.
Thus, since the holding jig 11 can expose and hold only the film forming portion S1 with respect to the film forming source 4, the substrate S including the film forming portion S1 and the non-film forming portion S2 is Can be mass produced in batch. Therefore, the time required for the film forming operation can be shortened, and the cost for the film forming operation can be reduced.

(実施例1及び比較例1,2)
上記構成の基板保持機構3によって基板Sを保持し、屈折率が異なる薄膜を積層させることにより反射防止膜(AR膜)を作成し、距離Iの効果について評価した。
なお、反射防止膜を構成する各層の成膜条件は下記のとおりであり、実施例1及び比較例1,2で共通である。
(Example 1 and Comparative Examples 1 and 2)
The substrate S was held by the substrate holding mechanism 3 configured as described above, and an antireflection film (AR film) was formed by laminating thin films having different refractive indexes, and the effect of the distance I was evaluated.
The film forming conditions of each layer constituting the antireflection film are as follows, and are common to Example 1 and Comparative Examples 1 and 2.

基板:ガラス基板
高屈折率誘電体材料: TiO
低屈折率誘電体材料: SiO
TiOの成膜速度: 0.2nm/sec
SiOの成膜速度: 0.3nm/sec
TiO/SiO蒸発時のイオン源条件
導入ガス:酸素50sccm
イオン加速電圧:1000V
イオン電流:500mA
ニュートラライザの条件
ニュートラライザ電流:1000mA
Substrate: Glass substrate High refractive index dielectric material: TiO 2
Low refractive index dielectric material: SiO 2
TiO 2 deposition rate: 0.2 nm / sec
SiO 2 deposition rate: 0.3 nm / sec
Ion source conditions during evaporation of TiO 2 / SiO 2
Introduced gas: 50 sccm of oxygen
Ion acceleration voltage: 1000V
Ion current: 500 mA
Neutralizer conditions
Neutralizer current: 1000mA

上記成膜条件により反射防止膜を形成し、仮想線V2と仮想線V3との距離Iを20mmとしたとき(図11:実施例1)、5mmとしたとき(図12:比較例1)及び10mmとしたとき(図13:比較例2)において、それぞれ隣接する基板保持部材がある場合と、ない場合で成膜した反射防止膜の反射率を比較した。   When an antireflection film is formed under the above film forming conditions and the distance I between the virtual line V2 and the virtual line V3 is 20 mm (FIG. 11: Example 1), and 5 mm (FIG. 12: Comparative Example 1); When the thickness was 10 mm (FIG. 13: Comparative Example 2), the reflectances of the antireflection films formed with and without the adjacent substrate holding members were compared.

(実施例1)
距離Iを20mmとした場合(図11)において、隣接する基板保持部材がある場合は、隣接する基板保持部材がない場合と比較して、形成される反射防止膜の反射率に大きな差がないことが示された。なお、図11において、実線で示す「隣接する基板保持部材がある場合」とは、径方向上で隣り合う基板保持部材のうち、一方の基板保持部材に対して、距離Iが20mmとなるように他方の基板保持部材が配設された状態を示すものである。
反射防止膜の反射防止効果、すなわち反射率は、反射防止膜の厚さに依存する傾向がある。したがって、図11より、距離Iが20mmとなるように基板保持部材を配置したとき、形成される薄膜が隣接する基板保持部材の影響を受けることなく、均一な膜厚の薄膜を形成できることが示されている。
Example 1
If the distance I was 20mm (Figure 11), if there is an adjacent substrate holding member, as compared with the case where there is no adjacent substrate holding member, there is no significant difference in the reflectance of the antireflection film to be formed It was shown that. In FIG. 11, “when there is an adjacent substrate holding member” indicated by a solid line means that the distance I is 20 mm with respect to one of the substrate holding members adjacent in the radial direction. 2 shows a state in which the other substrate holding member is disposed.
The antireflection effect of the antireflection film, that is, the reflectance, tends to depend on the thickness of the antireflection film. Therefore, FIG. 11 shows that when the substrate holding member is arranged so that the distance I is 20 mm, the formed thin film can be formed with a uniform thickness without being affected by the adjacent substrate holding member. Has been.

(比較例1)
距離Iを5mmとした場合(図12)において、隣接する基板保持部材がある場合は、隣接する基板保持部材がない場合と比較して、形成される反射防止膜の反射率に大きな差があることが示された。なお、図12において、実線で示す「隣接する基板保持部材がある場合」とは、径方向上で隣り合う基板保持部材のうち、一方の基板保持部材に対して、距離Iが5mmとなるように他方の基板保持部材が配設された状態を示すものである。
反射防止膜の反射防止効果、すなわち反射率は、反射防止膜の厚さに依存する傾向がある。したがって、図12より、距離Iが5mmとなるように基板保持部材を配置したとき、形成される薄膜が隣接する基板保持部材の影響を受けることが示されている。
(Comparative Example 1)
When the distance I is 5 mm (FIG. 12), when there is an adjacent substrate holding member, there is a large difference in the reflectance of the formed antireflection film compared to the case where there is no adjacent substrate holding member. It was shown that. In FIG. 12, the “when there is an adjacent substrate holding member” indicated by a solid line means that the distance I is 5 mm with respect to one of the substrate holding members adjacent in the radial direction. 2 shows a state in which the other substrate holding member is disposed.
The antireflection effect of the antireflection film, that is, the reflectance, tends to depend on the thickness of the antireflection film. Therefore, FIG. 12 shows that when the substrate holding member is arranged so that the distance I is 5 mm, the formed thin film is affected by the adjacent substrate holding member.

(比較例2)
また、図13に示す本発明の比較例2では、距離Iを10mmとした。本比較例2において、距離Iが10mmの状態で隣接する基板保持部材がある場合と、隣接する基板保持部材がない場合とを比較しても、形成される反射防止膜の反射率に若干の差があることが示された。なお、「隣接する基板保持部材がある場合」とは、径方向上で隣り合う基板保持部材のうち、一方の基板保持部材に対して、距離Iが10mmとなるように他方の基板保持部材が配設された状態を示すものである。
図13においてもまた、距離Iが10mmとなるように基板保持部材を配置したとき、形成される薄膜が隣接する基板保持部材の影響を受けることが示されている。
(Comparative Example 2)
Moreover, in the comparative example 2 of this invention shown in FIG. 13, the distance I was 10 mm. In Comparative Example 2, even when there is an adjacent substrate holding member with a distance I of 10 mm and when there is no adjacent substrate holding member, the reflectance of the antireflection film to be formed is slightly It was shown that there was a difference. Note that “when there is an adjacent substrate holding member” means that the other substrate holding member is 10 mm away from one of the substrate holding members adjacent in the radial direction so that the distance I is 10 mm. It shows the state of arrangement.
FIG. 13 also shows that when the substrate holding member is arranged so that the distance I is 10 mm, the formed thin film is affected by the adjacent substrate holding member.

したがって、距離Iが少なくとも、5mm以上10mm以下の範囲においては成膜される薄膜の膜厚に対し、近接する基板保持部材10,20,30,40が影響を及ぼすことが示された。そして、さらに、距離Iが大きくなるほど、近接する基板保持部材10,20,30,40が成膜される薄膜に対して与える影響が小さくなることもまた示されている。したがって、距離Iが10mmよりもさらに大きい場合は、薄膜に対して与える影響が小さくなると予想される。   Therefore, it was shown that the substrate holding members 10, 20, 30, and 40 adjacent to each other have an influence on the film thickness of the thin film to be formed when the distance I is at least in the range of 5 mm to 10 mm. Further, it is also shown that as the distance I increases, the influence of the adjacent substrate holding members 10, 20, 30, and 40 on the thin film to be formed decreases. Therefore, when the distance I is further larger than 10 mm, the influence on the thin film is expected to be small.

そして、実施例1より、距離Iを20mmとすると、成膜される薄膜の膜厚に対し、近接する基板保持部材10,20,30,40がほとんど影響を与えないことが示された。
したがって、距離Iについて、隣り合う基板保持部材の径方向の端部が20mm以上離れた位置に配設されるようにすることにより、基板S上に形成される薄膜の反射率及び膜厚を均一とすることができる。
And Example 1 showed that the board | substrate holding member 10,20,30,40 which adjoined had little influence with respect to the film thickness of the thin film formed, when the distance I was 20 mm.
Therefore, with respect to the distance I, the radial end portions of the adjacent substrate holding members are disposed at positions separated by 20 mm or more, so that the reflectance and film thickness of the thin film formed on the substrate S are uniform. It can be.

<他の実施形態>
次に、他の実施形態に係る基板保持機構について説明する。
本実施形態の基板保持機構は、図1乃至図10に示す回転部材60及び支持部材50と、基板保持部材とを備える。回転部材60及び支持部材50は、図1乃至図10の実施形態と共通するため、説明を省略する。
基板保持部材は、基板保持部材10,20,30,40の代わりに用いられるものであり、支持部材50の最も外側に固定される基板保持部材10´を、図14に示す。
基板保持部材10´は、平面視で略扇形状の略板体からなり、保持治具11´〜13´を板体上に固定可能に構成されている。
<Other embodiments>
Next, a substrate holding mechanism according to another embodiment will be described.
The substrate holding mechanism of this embodiment includes the rotating member 60 and the support member 50 shown in FIGS. 1 to 10 and a substrate holding member. Since the rotation member 60 and the support member 50 are the same as those in the embodiment shown in FIGS.
The substrate holding member is used in place of the substrate holding members 10, 20, 30, 40, and a substrate holding member 10 ′ fixed to the outermost side of the support member 50 is shown in FIG. 14.
The substrate holding member 10 ′ is formed of a substantially fan-shaped substantially plate body in plan view, and is configured to be able to fix the holding jigs 11 ′ to 13 ′ on the plate body.

基板保持部材10´は、保持部材11´が取り付けられる部分のうち、少なくとも、開口部11f´が形成される部分は、基板Sの成膜部分S1が露出するように開口した構成となっている。基板保持部材10´は、支持部材50に取付けられた不図示の固定用板材にボルト締めするためのボルト孔10h´を備えている。   The substrate holding member 10 ′ has a configuration in which at least a portion where the opening 11 f ′ is formed among the portions to which the holding member 11 ′ is attached is opened so that the film forming portion S 1 of the substrate S is exposed. . The substrate holding member 10 ′ includes a bolt hole 10 h ′ for bolting to a fixing plate (not shown) attached to the support member 50.

図15に示すように、保持治具11´は、平面視略長方形で断面略コ字状(U字状)の板体からなる。保持治具11´の一対の長辺の端部には、内側と比較して若干肉厚に形成された枠部11r´が設けられ、基板Sの一対の長辺の端部と当接することにより、基板Sが短辺方向に保持治具11´から脱落することを抑制する。   As shown in FIG. 15, the holding jig 11 ′ is a plate body having a substantially rectangular shape in plan view and a substantially U-shaped cross section (U shape). A pair of long side ends of the holding jig 11 ′ are provided with a frame portion 11 r ′ that is slightly thicker than the inner side, and abuts against a pair of long side ends of the substrate S. This suppresses the substrate S from falling off the holding jig 11 ′ in the short side direction.

保持治具11´は、基板Sを保持する複数の保持面11d´と、複数の保持面11d´の間に形成されて基板Sの短辺の端部とそれぞれ当接する複数の段差部11e´と、基板Sの端部が段差部11e´と当接して保持された状態にあるとき、保持面11d´の成膜部分S1に相当する部分に形成された開口部11f´とを備えている。   The holding jig 11 ′ is formed between a plurality of holding surfaces 11 d ′ holding the substrate S and a plurality of stepped portions 11 e ′ formed between the plurality of holding surfaces 11 d ′ and in contact with the end portions on the short side of the substrate S. And an opening portion 11f ′ formed in a portion corresponding to the film forming portion S1 of the holding surface 11d ′ when the end portion of the substrate S is in contact with and held by the step portion 11e ′. .

保持治具11´は、基板Sを保持するための複数の保持面11d´を備えている。そして、隣接する保持面11d´の間には、それぞれ、段差部11e´が形成されている。   The holding jig 11 ′ includes a plurality of holding surfaces 11 d ′ for holding the substrate S. A step portion 11e ′ is formed between the adjacent holding surfaces 11d ′.

複数の保持面11d´及び複数の段差部11e´は、断面視で階段状に形成されており、一つの保持面11d´に対して1枚の基板Sが保持される。したがって、この保持治具11´に対し、基板Sを順に重ねていくことにより、複数の基板Sは、互いにその一部が重なり、他の部分がずれて、保持される。   The plurality of holding surfaces 11d ′ and the plurality of stepped portions 11e ′ are formed in a step shape in a sectional view, and one substrate S is held on one holding surface 11d ′. Therefore, by sequentially stacking the substrates S on the holding jig 11 ′, the plurality of substrates S are held with their portions overlapping each other and the other portions shifted.

段差部11e´は、互いに平行であり、この段差部11e´に基板Sの短辺の端部が当接することにより、複数の基板Sが直線状に保持される。   The step portions 11e ′ are parallel to each other, and the plurality of substrates S are held in a straight line when the end portion of the short side of the substrate S abuts on the step portions 11e ′.

したがって、基板Sの端部が、それぞれ段差部11e´及び枠部11r´に当接して保持されるため、基板Sは、保持治具11´上で容易に且つ安定して固定され、その保持位置がずれてしまうことがない。   Therefore, since the edge part of the board | substrate S is contact | abutted and hold | maintained at level | step-difference part 11e 'and the frame part 11r', respectively, the board | substrate S is easily and stably fixed on the holding jig 11 ', and its holding | maintenance The position will not shift.

段差部11e´の高さは、基板Sの厚みよりも若干高くなるように形成されているとよい。この構成により、複数の基板Sが重ねられた状態であっても、基板Sの表面が損傷するのを抑制することができる。   The height of the step portion 11e ′ is preferably formed to be slightly higher than the thickness of the substrate S. With this configuration, it is possible to suppress the surface of the substrate S from being damaged even when the plurality of substrates S are stacked.

保持面11d´には、基板Sの成膜部分S1を成膜源4に対して露出させる開口部11f´が形成されている。開口部11f´は、複数の保持面11d´に亘って一体で形成された長穴となっている。但し、開口部11f´は、長穴状でなく、各保持面11d´毎にそれぞれ個別に分離して形成されていてもよい。   In the holding surface 11 d ′, an opening 11 f ′ that exposes the film forming portion S 1 of the substrate S to the film forming source 4 is formed. The opening 11f ′ is a long hole formed integrally with the plurality of holding surfaces 11d ′. However, the opening 11f ′ may not be formed in a long hole shape, but may be formed separately for each holding surface 11d ′.

保持治具11´の長手方向の一端側であって、基板保持部材10´組付時に回転軸X側となる位置には、基板S取付側の面が平面状に形成された平面部11s´を備えている。
平面部11s´は、最初に保持治具11´に配置される基板Sの非成膜部分S2を支持する。
保持治具12´,13´は、保持治具11´と同様の構成であるため、説明を省略する。
At one end side in the longitudinal direction of the holding jig 11 ′ and at the position on the rotation axis X side when the substrate holding member 10 ′ is assembled, the flat surface portion 11 s ′ in which the surface on the substrate S mounting side is formed in a flat shape. It has.
The flat surface portion 11s ′ supports the non-film-forming portion S2 of the substrate S that is first disposed on the holding jig 11 ′.
Since the holding jigs 12 'and 13' have the same configuration as the holding jig 11 ', description thereof is omitted.

本実施形態では、複数の保持治具11´,12´,13´が、基板保持部材10´上で、可能な限り広い面積を覆うことができるように、且つ、開口部11f´が互いに重ならないように配設されている。   In the present embodiment, the plurality of holding jigs 11 ′, 12 ′, and 13 ′ can cover the widest possible area on the substrate holding member 10 ′, and the openings 11 f ′ overlap each other. It is arranged so that it does not become.

保持治具11´〜13´が固定された基板保持部材10´は、支持部材50と同数用いられる。支持部材50と同数の基板保持部材10´は、ボルト孔10h´において不図示の固定用板材にボルト締めされることにより、図1乃至図10に示す支持部材50の間に架設されて固定され、全体としてドーム状に支持される。
本実施形態では、支持部材50が5つ設けられるため、基板保持部材10´は、5設けられているが、これ以外の数であってもよい。
The same number of substrate holding members 10 ′ to which the holding jigs 11 ′ to 13 ′ are fixed are used as the supporting members 50. The same number of substrate holding members 10 ′ as the supporting members 50 are bolted to fixing plates (not shown) in bolt holes 10 h ′ so as to be installed and fixed between the supporting members 50 shown in FIGS. 1 to 10. , Supported as a dome as a whole.
In this embodiment, since five support members 50 are provided, five substrate holding members 10 ′ are provided, but the number may be other than this.

基板Sを保持治具11´に載置する手順は、以下の通りである。
まず、最初の基板Sを、最も平面部11s´に近い位置に形成されている段差部11e´に一方の短辺の端部を当接させるようにして、平面部11s´に載置する。
The procedure for placing the substrate S on the holding jig 11 ′ is as follows.
First, the first substrate S is placed on the flat surface portion 11s ′ so that the end portion of one short side is brought into contact with the step portion 11e ′ formed closest to the flat surface portion 11s ′.

次に、2枚目の基板Sを1枚目の基板Sの上に重ね、1枚目の基板Sが当接した段差部11e´の隣の段差部11e´に対して2枚目の基板Sの一方の短辺の端部を当接させる。このとき、2枚目の基板Sの成膜部分S1が、1枚目の基板Sに重ならず、2枚目の基板Sの非成膜部分S2が他方の基板Sに重なるようにして、載置される。   Next, the second substrate S is stacked on the first substrate S, and the second substrate is placed on the step portion 11e ′ adjacent to the step portion 11e ′ with which the first substrate S is in contact. The end of one short side of S is brought into contact. At this time, the film formation portion S1 of the second substrate S does not overlap the first substrate S, and the non-film formation portion S2 of the second substrate S overlaps the other substrate S, Placed.

同様の手順で3枚目以降の複数の基板Sを順次保持治具11´に載置した後、保持治具11´を、不図示のボルトにより、ボルト孔10h´で、不図示の固定用板材に固定する。これにより、一つ目の保持治具11´の支持部材50への取付が完了する。同様の手順で、残りの4つの保持治具11´を、支持部材50に取付ける。これにより、5つの保持治具11´が、5つの支持部材50の間に取付けられ、全体として傘状の形状となる。
その後、基板Sが載置された基板保持機構3を、真空容器1内へ導入し、薄膜形成を行う。
After the third and subsequent substrates S are sequentially placed on the holding jig 11 ′ in the same procedure, the holding jig 11 ′ is fixed by a bolt (not shown) through a bolt hole 10 h ′. Fix to the board. Thereby, attachment to the support member 50 of the 1st holding jig 11 'is completed. The remaining four holding jigs 11 ′ are attached to the support member 50 in the same procedure. Accordingly, the five holding jigs 11 ′ are attached between the five support members 50, and have an umbrella shape as a whole.
Thereafter, the substrate holding mechanism 3 on which the substrate S is placed is introduced into the vacuum vessel 1 to form a thin film.

100 薄膜形成装置
1 真空容器
2 真空ポンプ
3 基板保持機構
4 成膜源
10,20,30,40,10´ 基板保持部材
10h´ ボルト孔
11,12,13,14,15,11´,12´,13´ 保持治具
11A 最下層基板配置
11B 階段状部
11a 底板部
11b 内側立壁部
11c 外側立壁部
11d,11d´ 保持面
11e,11e´ 段差部
11f,21f,31f,41f,11f´ 開口部
11g1 支持面
11g2 凹面
11h 窓部
11i,11j 肉厚部
11k,11m 排気溝
11js 段差
11jx 排気溝
11n 第一の壁部
11o 第二の壁部
11os 段差部
11p,11q 取付孔
11r´ 枠部
11s´ 平面部
50 支持部材
51 ボルト
51a 固定用板材
60 回転部材
I 距離
P 垂線
S 基板
S1 成膜部分
S2 非成膜部分
V1,V2,V3 仮想線
X 回転軸(中心軸)
DESCRIPTION OF SYMBOLS 100 Thin film formation apparatus 1 Vacuum container 2 Vacuum pump 3 Substrate holding mechanism 4 Film formation source 10, 20, 30, 40, 10 'Substrate holding member 10h' Bolt hole 11, 12, 13, 14, 15, 11 ', 12' , 13 ′ Holding jig 11 </ b> A Lowermost layer substrate arrangement portion 11 </ b> B Stepped portion 11 a Bottom plate portion 11 b Inner standing wall portion 11 c Outer standing wall portion 11 d, 11 d ′ Holding surface 11 e, 11 e ′ Step portion 11 f, 21 f, 31 f, 41 f, 11 f ′ Opening Part 11g1 Support surface 11g2 Concave surface 11h Window part 11i, 11j Thick part 11k, 11m Exhaust groove 11js Step 11jx Exhaust groove 11n First wall part 11o Second wall part 11os Step part 11p, 11q Mounting hole 11r 'Frame part 11s ′ Flat portion 50 Support member 51 Bolt 51a Fixing plate 60 Rotating member I Distance P Normal S Substrate S1 Film forming portion S2 Non-forming Film part V1, V2, V3 Virtual line X Rotation axis (central axis)

Claims (10)

複数の基板を保持する基板保持機構を有し、前記複数の基板上に薄膜を形成する薄膜形成装置であって、
前記基板保持機構は、
前記複数の基板を保持する基板保持部材と、
該基板保持部材を支持する支持部材と、
該支持部材を回転させる回転部材と、を備え、
前記基板保持部材は、
前記複数の基板を保持し、前記薄膜の材料を放出する成膜源と前記複数の基板との間に配設される複数の保持面と、
該複数の保持面の間に形成された複数の段差部と、
前記複数の保持面にそれぞれ形成された複数の開口部と、を有し、
前記基板保持部材が前記回転部材の回転方向において分割されてなる保持治具の集合体として構成され、
前記支持部材は、前記基板保持部材の前記複数の保持面と、前記回転部材の回転軸とが成す角度が可変となるように前記基板保持部材を保持し、
前記複数の基板のうち前記薄膜が形成されない非成膜部分の一部が他の基板と重なり合うと共に、前記薄膜が形成される成膜部分が露出し、前記複数の基板の端部が前記段差部にそれぞれ当接した状態にあるとき、前記成膜部分が、前記開口部を通して前記成膜源側に露出するように、複数の前記基板を搭載可能であることを特徴とする薄膜形成装置。
A thin film forming apparatus having a substrate holding mechanism for holding a plurality of substrates and forming a thin film on the plurality of substrates,
The substrate holding mechanism is
A substrate holding member for holding the plurality of substrates;
A support member for supporting the substrate holding member;
A rotating member that rotates the support member,
The substrate holding member is
A plurality of holding surfaces disposed between the plurality of substrates and a film forming source that holds the plurality of substrates and releases the material of the thin film;
A plurality of step portions formed between the plurality of holding surfaces;
A plurality of openings respectively formed in the plurality of holding surfaces;
The substrate holding member is configured as an assembly of holding jigs divided in the rotation direction of the rotating member,
The support member holds the substrate holding member such that an angle formed by the plurality of holding surfaces of the substrate holding member and a rotation axis of the rotating member is variable,
Of the plurality of substrates, a part of the non-film-formation portion where the thin film is not formed overlaps with another substrate, and the film-formation portion where the thin film is formed is exposed, and an end portion of the plurality of substrates is the stepped portion. A thin film forming apparatus, wherein a plurality of the substrates can be mounted so that the film forming portion is exposed to the film forming source side through the opening when in contact with each other.
前記基板保持部材は、前記回転部材の回転方向において2以上12以下に分割されていることを特徴とする請求項1に記載の薄膜形成装置。   The thin film forming apparatus according to claim 1, wherein the substrate holding member is divided into 2 or more and 12 or less in a rotation direction of the rotating member. 前記基板保持部材は、平面視環状に形成され、前記基板保持部材の径方向上で、前記基板保持部材が複数隣り合って配設されることを特徴とする請求項1または2に記載の薄膜形成装置。   3. The thin film according to claim 1, wherein the substrate holding member is formed in an annular shape in plan view, and a plurality of the substrate holding members are arranged adjacent to each other in a radial direction of the substrate holding member. Forming equipment. 前記基板保持部材は、前記成膜部分と前記成膜源とを通る第1の仮想線と、前記成膜部分の成膜面に対する垂線とが成す角度が0°以上45°以下となるように前記複数の基板を保持することを特徴とする請求項1乃至のいずれか一項に記載の薄膜形成装置。 The substrate holding member is configured such that an angle formed between a first imaginary line passing through the film formation portion and the film formation source and a perpendicular to the film formation surface of the film formation portion is 0 ° to 45 °. the thin-film formation apparatus according to any one of claims 1 to 3, characterized in that for holding the plurality of substrates. 前記支持部材は、前記複数の保持面に形成された前記複数の開口部が、前記回転部材の回転軸を中心軸とする仮想ドーム上に位置するように前記基板保持部材を支持することを特徴とする請求項1乃至のいずれか一項に記載の薄膜形成装置。 The support member supports the substrate holding member such that the plurality of openings formed in the plurality of holding surfaces are positioned on a virtual dome having a rotation axis of the rotation member as a central axis. The thin film forming apparatus according to any one of claims 1 to 4 . 前記径方向上で互いに隣り合って配設される前記基板保持部材は、一方の前記基板保持部材に形成された前記開口部が、前記成膜源に対し、他方の前記基板保持部材によって遮蔽されない位置に配設されることを特徴とする請求項3乃至のいずれか一項に記載の薄膜形成装置。 The substrate holding member disposed adjacent to each other in the radius direction, the opening formed in the substrate holding member of the hand is, with respect to the deposition source, shielding by the other of said substrate holding member the thin-film formation apparatus according to any one of claims 3 to 5, characterized in that disposed in the non position. 前記支持部材は、平面視環状に形成されて回転方向及び径方向の少なくとも一方において複数配設される前記基板保持部材を支持し、
前記径方向上で互いに隣り合って配設される前記基板保持部材は、一方の前記基板保持部材の前記保持面に形成された前記開口部の外周と前記成膜源とを通る第2の仮想線に対し、他方の前記基板保持部材の前記径方向の端部が20mm以上離れた位置に配設されることを特徴とする請求項3乃至のいずれか一項に記載の薄膜形成装置。
The support member is formed in an annular shape in plan view, and supports the substrate holding member disposed in plural in at least one of the rotational direction and the radial direction,
The substrate holding members disposed adjacent to each other in the radial direction are second imaginary paths that pass through the outer periphery of the opening formed on the holding surface of one of the substrate holding members and the film forming source. The thin film forming apparatus according to any one of claims 3 to 6 , wherein the radial end portion of the other substrate holding member is disposed at a position separated by 20 mm or more with respect to the line.
前記複数の段差部は、前記径方向に対して傾斜する方向に沿って形成され、
前記複数の基板は矩形状の板材からなり、前記複数の基板において前記径方向内側の縁辺の長さをそれぞれLとし、前記複数の基板のそれぞれの縁辺の中心点から前記回転部材の回転軸までの距離をrとしたとき、
前記基板保持部材は、(L/2)/rの値が0.05以上0.75以下となるように前記複数の基板を保持することを特徴とする請求項3乃至のいずれか一項に記載の薄膜形成装置。
The plurality of step portions are formed along a direction inclined with respect to the radial direction,
The plurality of substrates are made of a rectangular plate, and the length of the radially inner edge of each of the plurality of substrates is L, and from the center point of each edge of the plurality of substrates to the rotation axis of the rotating member. When the distance of r is r,
Said substrate holding member, (L / 2) / r any one of claims 3 to 7 values, characterized in that for holding the plurality of substrates such that 0.05 to 0.75 of The thin film forming apparatus described in 1.
前記基板保持部材は、重なり合って保持される前記複数の基板のうち、一方の前記基板の縁辺と、他方の前記基板の縁辺とが成す角度が、0°以上90°以下となるように前記複数の基板を保持することを特徴とする請求項に記載の薄膜形成装置。 The substrate holding member includes a plurality of the plurality of substrates so that an angle formed by an edge of one of the substrates and an edge of the other of the substrates is 0 ° or more and 90 ° or less. The thin film forming apparatus according to claim 8 , wherein the substrate is held. 前記複数の段差部の高さは、前記複数の基板の厚みと比較して0.05mm以上高く形成されていることを特徴とする請求項1乃至のいずれか一項に記載の薄膜形成装置。 The thin film forming apparatus according to any one of claims 1 to 9 , wherein the height of the plurality of stepped portions is formed to be higher by 0.05 mm or more than the thickness of the plurality of substrates. .
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