JP2011208238A - Vapor deposition apparatus - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a vapor deposition apparatus which does not form vapor deposition spots on individual substrates even when vapor-deposited films are formed on many substrates at a time, and can manufacture a substrate having stable reflection properties.SOLUTION: This vapor deposition apparatus is constituted by: a substrate support member 2 for supporting a plurality of substrates 6; and a vapor deposition source 4 which spreads a desired vapor-deposition material onto the surface to be vapor-deposited of the substrate 6 supported by the substrate support member 2, and is arranged so that angles from the vapor deposition source 4 with respect to the fringes of the surfaces to be vapor-deposited of each substrate 6 are approximately the same over all perimeters of the surfaces to be vapor-deposited. Because the angles from the vapor deposition source 4 with respect to the fringes of the surfaces to be vapor-deposited of each substrate 6 are approximately the same over all perimeters of the surfaces to be vapor-deposited, vapor deposition angles of the vapor deposition material spreading from the vapor deposition source 4 become same in the fringes of the surfaces to be vapor-deposited of each substrate 6. Because of this, the vapor deposition material uniformly deposits on the fringes of each substrate 6, and vapor-deposited films having a uniform film thickness are formed.

Description

  The present invention relates to a vapor deposition apparatus used for forming a desired film on the surface of a substrate used for spectacle lenses and the like, and more particularly to a vapor deposition apparatus capable of forming a film on a plurality of substrates at once with high accuracy. .

  Various functions are imparted to optical lenses used in glasses or the like. For example, an optical lens having an antireflection function is formed by forming a multilayer antireflection film on the surface of the substrate (lens) by vacuum deposition.

  As described above, the multilayer antireflection film is generally formed using a vacuum deposition apparatus. The vacuum deposition apparatus includes a dome-shaped substrate support in which a plurality of substrates are arranged, a heater and a deposition source arranged below the substrate support, and the deposition surface of the substrate is on the deposition source side. Is supported by the substrate support. And a vapor deposition molecule disperses from a vapor deposition source by heating a vapor deposition source with a heater, and vapor-deposits on the to-be-deposited surface of a substrate (patent documents 1).

By the way, the multilayer antireflection film may have different interference colors depending on the thickness of the constituent film and the deposition state. When a plurality of substrates are vapor-deposited at once, the degree of vapor deposition varies depending on the location of the substrates, and as a result, the film quality may not be uniform.
Further, when the substrate is a lens having a curved surface, locally different film thickness distributions may occur on the curved surface, and the interference color may be different even though the lens is the same. In particular, in a high curve lens having a large curvature radius, the periphery of the lens becomes a shadow of the curve, and the deposition material is difficult to adhere.

FIG. 18A and FIG. 18B show a state in which a vapor deposition film is formed on a substrate in a conventional vapor deposition apparatus, and vapor deposition on a substrate in the case where the vapor deposition angle is different within a vapor deposition surface of a substrate having a curved surface. It is the figure which showed the mode of adhesion of a molecule | numerator typically. 18A and 18B, only one substrate 6 supported by the substrate support member 12 is extracted and illustrated. In FIG. 18A and FIG. 18B, the tangent at the periphery of the substrate 16 is indicated by a line ln. In addition, a line connecting the surface of the substrate 16 positioned on the bottom side of the substrate support member 12 and a vapor deposition source (not shown) is indicated by a line ₁₁ , and the surface of the substrate 16 positioned on the upper side of the substrate support member 12 is illustrated. It shows the line connecting the evaporation source not in the line l _2. The angle difference between the line ln and the line l ₁ is θ ₁ , and the angle difference between the line ln and the line l ₂ is θ ₂ .

For example, as shown in FIG. 18A, in the dome-shaped substrate support member 12, when θ ₁ > θ ₂ , that is, when the bottom side of the substrate 16 faces the deposition source at a wide angle, the bottom of the substrate 16 More deposited molecules adhere to the side. In this case, vapor deposition molecules from the vapor deposition source are blocked by the curved surface of the vapor deposition surface on the upper side of the substrate 16, and the vapor deposition molecules hardly adhere to the upper side of the substrate 16. For this reason, the film thickness of the vapor deposition film becomes thick only on the bottom side of the substrate 16.

On the other hand, as shown in FIG. 18B, in the dome-shaped substrate support member 12, when θ ₁ <θ ₂ , that is, when the upper side of the substrate 16 faces the deposition source at a wide angle, the upper of the substrate 16 More deposited molecules adhere to the side. In this case, vapor deposition molecules from the vapor deposition source are blocked by the curved surface of the deposition surface on the bottom side of the substrate 16, and the vapor deposition molecules hardly adhere to the bottom side of the substrate 16. For this reason, the film thickness of the vapor deposition film becomes thick only on the upper side of the substrate 16.

  As described above, when the vapor deposition film is formed by supporting the substrate 16 having a curved surface on the dome-shaped substrate support member 12, the angle at which the vapor deposition molecules enter the vapor deposition surface at the periphery of the substrate 16. (Vapor deposition angle) is different, and film pressure distribution tends to occur in the substrate 16. For this reason, in a conventional vapor deposition apparatus that is generally used, vapor deposition spots are generated in the substrate 16, and portions having different interference colors are generated in the substrate 16, so that stable reflection characteristics cannot be obtained.

  On the other hand, for example, Patent Document 2 describes a vapor deposition apparatus including a mechanism for adjusting an angle at which a vapor deposition surface of a substrate and a vapor deposition source face each other. The vapor deposition apparatus described in Patent Document 2 includes a substrate holder in which a plurality of parts are connected by hinges or link coupling portions. And it is set as the structure which adjusts the angle which faces the vapor deposition source of a board | substrate by the deformation | transformation of the hinge of a base | substrate holder, or a link coupling part. Thereby, the vapor deposition material is deposited on the deposition surface of the substrate with high accuracy.

  However, in the vapor deposition process, the vapor deposition material scattered from the vapor deposition source is not fixed only to the portion to be vapor deposited, but is scattered and fixed toward the substrate holder that holds the substrate having the vapor deposition surface. For this reason, when the hinge of the substrate holder or the link coupling portion is deformed, the deposited material attached in the previous deposition process may peel off. When the peeled deposit adheres to the deposition surface of the substrate being deposited, there is a problem that only the adhered region is not deposited.

  Moreover, when vapor-depositing on many (for example, 100 or more) board | substrates at once, adjusting the angle of a hinge or a coupling link is complicated, and is not practical.

Japanese Patent Laid-Open No. 2004-99948 Japanese Patent Laid-Open No. 10-68066

  In view of the above, the present invention provides a vapor deposition apparatus capable of producing a substrate having stable reflection characteristics without causing vapor deposition spots on individual substrates even when vapor deposition films are formed on many substrates at once. .

  In order to solve the above problems and achieve the object of the present invention, the vapor deposition apparatus of the present invention includes a substrate support member and a vapor deposition source. The substrate support member supports a plurality of substrates. The vapor deposition source is intended to scatter a desired vapor deposition material on the vapor deposition surface of the substrate supported by the substrate support member, and the angle from the vapor deposition source with respect to the periphery of the vapor deposition surface of each substrate is almost the entire circumference. They are arranged to be the same. Here, the allowable range of “substantially the same” is that the angle difference from the deposition source with respect to the periphery of the deposition surface of the substrate is 5 degrees or less. For example, when the substrate support member is movable and each substrate moves in the vapor deposition apparatus, it means that the angle difference from the vapor deposition source is 5 degrees or less throughout the vapor deposition process. Moreover, it is more preferable that the sum value of the angle difference when it is farthest from the evaporation source and the angle difference when it is closest is 10 degrees or less.

  In the vapor deposition apparatus of the present invention, the vapor deposition source is disposed so that the angle from the vapor deposition source with respect to the periphery of the vapor deposition surface of each substrate is substantially the same over the entire circumference of the vapor deposition surface, thereby scattering from the vapor deposition source. The vapor deposition angle with respect to the peripheral edge of the surface to be vapor-deposited is almost the same. Thereby, the vapor deposition film with a uniform film thickness can be formed at the periphery of the vapor deposition surface of each substrate.

  Moreover, in the vapor deposition apparatus of this invention, it is preferable that a board | substrate support member has a board | substrate support surface which has a predetermined curvature facing the vapor deposition source side. The plurality of substrates are supported on the substrate support surface of the substrate support member such that the deposition surface faces the deposition source side. Further, the vapor deposition source is preferably arranged at a position separated from the positions of all the substrates supported by the substrate support member by the curvature radius of the substrate support surface.

  By setting it as the above structure, the angle from the vapor deposition source with respect to the periphery of the vapor deposition surface of each board | substrate is made substantially the same over the perimeter of the vapor deposition surface. Further, the distance from the vapor deposition source to each substrate is the same.

  The substrate support member is preferably configured to be rotatable about its central axis as a rotation axis. By depositing the deposition material on the deposition surface of the substrate while rotating the substrate support member, it is possible to form a deposition film having a more uniform film thickness.

Moreover, it is preferable that the correction board which correct | amends the scattering direction of the vapor deposition material scattered from a vapor deposition source is arrange | positioned in the desired position between a board | substrate support member and a vapor deposition source as needed.
By disposing the correction plate, the film thickness of the deposited film formed on each substrate can be corrected uniformly.

  According to the present invention, even when vapor deposition films are formed on a large number of substrates at a time, a uniform vapor deposition film can be formed on each substrate, and the vapor deposition films on the respective substrates deposited at the same time can also be formed. A uniform film can be formed. Thereby, the board | substrate which has the stable reflective characteristic can be manufactured.

It is a schematic block diagram of the vapor deposition apparatus of one Embodiment of this invention. It is a schematic sectional block diagram of the vapor deposition apparatus of one Embodiment of this invention. 1 is an enlarged view of one of a plurality of substrates supported by a vapor deposition apparatus according to an embodiment of the present invention. It is the figure which showed the schematic block diagram of the vapor deposition apparatus which concerns on A, B Example, and the vapor deposition angle to each board | substrate supported by the board | substrate support member in the vapor deposition apparatus. In an embodiment, when a film was formed by using a SiO ₂ as an evaporation material, a graph showing the spectral curve of the substrate from the first stage 7 stage. In an embodiment, when a film was formed by using ZrO ₂ as the evaporation material is a graph showing the spectral curve of the substrate from the first stage 7 stage. A, B It is the figure which showed the schematic block diagram of the vapor deposition apparatus which concerns on the comparative example 1, and the vapor deposition angle to each board | substrate supported by the substrate support member in the vapor deposition apparatus. A, B It is the figure which showed the schematic block diagram of the vapor deposition apparatus which concerns on the comparative example 2, and the vapor deposition angle to each board | substrate supported by the substrate support member in the vapor deposition apparatus. A, B It is the schematic block diagram of the vapor deposition apparatus which concerns on the comparative example 3, and the figure which showed the vapor deposition angle to each board | substrate supported by the substrate support member in the vapor deposition apparatus. A, B It is the schematic block diagram of the vapor deposition apparatus which concerns on the comparative example 4, and the figure which showed the vapor deposition angle to each board | substrate supported by the board | substrate support member in the vapor deposition apparatus. A, B It is the schematic block diagram of the vapor deposition apparatus which concerns on the comparative example 5, and the figure which showed the vapor deposition angle to each board | substrate supported by the board | substrate support member in the vapor deposition apparatus. A, B Shows the distance, film thickness, refractive index, and film thickness ratio from the central axis of the substrate support member to each substrate when the SiO ₂ film is formed using the vapor deposition apparatus of Example 1 and Comparative Example. It is a thing. FIGS. 12A and 12B are a graph showing the film thicknesses of FIGS. 12A and 12B and a graph showing the refractive index. A, B The distance from the central axis of the substrate support member to each substrate, the film thickness, the refractive index, and the film thickness ratio when the Nb ₂ O ₅ film was formed using the vapor deposition apparatuses of Example 1 and Comparative Example Is shown. FIGS. 14A and 14B are a graph showing the film thicknesses of FIGS. 14A and 14B and a graph showing the refractive index. A, B Shows the distance, film thickness, refractive index, and film thickness ratio from the central axis of the substrate support member to each substrate when the ZrO ₂ film is formed using the vapor deposition apparatus of Example 1 and Comparative Example. It is a thing. FIGS. 16A and 16B are a graph showing the film thicknesses of FIGS. 16A and 16B and a graph showing the refractive index. A, B It is the figure which showed the mode when forming a vapor deposition film on a board | substrate in the conventional vapor deposition apparatus.

  Below, an example of the vapor deposition apparatus which concerns on embodiment of this invention is demonstrated, referring FIGS. In addition, this invention is not limited to the following examples.

  The vapor deposition apparatus which concerns on one Embodiment of this invention is demonstrated using FIGS.

  FIG. 1 is a schematic configuration diagram of a vapor deposition apparatus 1 according to this embodiment. Moreover, FIG. 2A is a cross-sectional block diagram of the vapor deposition apparatus 1 of the present embodiment, and FIG. 2B is a view of the main part of the vapor deposition apparatus as viewed from the top surface. As shown in FIGS. 1 and 2, the vapor deposition apparatus 1 of this embodiment includes a substrate support member 2 that supports a plurality of substrates 6 such as lenses having curved surfaces, and a vapor deposition source 4 that scatters a desired vapor deposition material. These are arranged in a vacuum chamber 7 that can maintain a vacuum.

  The substrate support member 2 is constituted by a dome-shaped member having a substrate support surface 2a facing the vapor deposition source 4 and having a predetermined curvature. A plurality of holders 3 for supporting a substrate 6 such as a lens are provided on the substrate support surface 2 a of the substrate support member 2. A cylindrical dome head 5 is attached to a surface of the top of the substrate support member 2 opposite to the substrate support surface 2a. The dome head 5 is provided to hold the substrate support member 2 in the vacuum chamber 7. The substrate support member 2 is configured to be rotatable around the central axis of the substrate support member 2.

The vapor deposition source 4 includes, for example, an electron beam vapor deposition source that scatters the vapor deposition material by electron beam irradiation, a case for holding a desired vapor deposition material, and an electron gun for irradiating the vapor deposition material with an electron beam. It consists of As shown in FIG. 2B, the vapor deposition source 4 is disposed on the central axis of the substrate support member in the vacuum chamber 7 so that the vapor deposition material faces the substrate support surface 2a. The substrate 2 is disposed at a position separated from the positions of all the substrates 6 supported by the member 2 by the curvature radius R of the substrate support surface 2a.
That is, in the present embodiment, the shape of the substrate support surface 2 a is a spherical shape centered on the vapor deposition source 4, so that all the substrates 6 supported by the substrate support member 2 are equidistant from the vapor deposition source 4. (= R).

  In the substrate support member 2, the curved substrate 6 is fixed to each holder 3 of the substrate support surface 2 a so that the deposition surface faces the deposition source 4. Thereafter, the deposition material 4 is heated and scattered toward the substrate support surface 2a by irradiating the deposition source 4 with an electron beam from an electron gun (not shown). As a result, the deposition material is deposited on the deposition surface of the substrate 6, and a deposition film having a desired film thickness is formed on the deposition surface of the substrate 6. At this time, the substrate support member 2 is rotated as necessary. Although not shown, a correction plate for correcting the scattering direction of the vapor deposition material from the vapor deposition source 4 is provided at a desired position between the substrate support member 2 and the vapor deposition source 4 in the vacuum chamber 7 as necessary. May be.

  FIG. 3 is an enlarged view of one of the plurality of substrates 6 supported by the vapor deposition apparatus 1 of this embodiment. The relationship between the deposition surface of the substrate 6 and the vapor deposition molecules scattered from the vapor deposition source 4 in the vapor deposition apparatus 1 of this embodiment will be described with reference to FIG.

In the following description, the end on the center side of the dome-shaped substrate support member 2 of the substrate 6 supported by the substrate support member 2 is referred to as “upper end”, and the end on the outer peripheral side of the substrate support member 2 is referred to as “lower end”. And
By the way, in vacuum vapor deposition, since the pressure in the vacuum chamber 7 is kept sufficiently low, the molecules of the vapor deposition material held in the vapor deposition source 4 scatter almost radially toward the substrate 6. For this reason, in the following description, the angle from the deposition source 4 with respect to the deposition surface of the substrate 6 is defined as the deposition angle with respect to the deposition surface (in this specification, “deposition angle” indicates the angle from the deposition source. ). In Figure 3, and the tangential ln of the evaporation surface of the lower end of the substrate 6, and the deposition angle theta ₁ of the angle difference theta ₁ line l ₁ connecting the evaporation source 4 and the position of its lower end to the substrate 6 the upper end, the substrate 6 the tangent ln of the evaporation surface at the upper end of the vapor deposition angle theta ₂ of the line l ₂ connecting the evaporation source 4 and the position of its upper end to the lower end of the substrate 6.

In the vapor deposition apparatus 1 of the present embodiment, the shape of the substrate support surface 2 a of the substrate support member 2 is a spherical shape centered on the vapor deposition source 4. For this reason, the distance from the vapor deposition source 4 to the upper end and the lower end of the vapor deposition surface of the substrate 6 becomes equal, and when the vapor deposition surface of the substrate 6 has a shape to be rotated, the upper and lower ends of the substrate 6 are The angle toward the vapor deposition source 4 is also equal. For this reason, the vapor deposition angle θ _{1 at} the lower end of the substrate 6 is substantially equal to the vapor deposition angle θ _{2 at} the upper end of the substrate 6. In FIG. 3, only the vapor deposition angles θ ₁ and θ _{2 at} the lower end and the upper end of the substrate 6 are shown, but actually, the vapor deposition angles are almost the same over the entire periphery of the vapor deposition surface of the substrate 6.

  As described above, in the vapor deposition apparatus 1 according to the present embodiment, the vapor deposition angle is substantially the same at the entire periphery of the deposition surface of the substrate 6, so that the vapor deposition material uniformly adheres over the entire periphery of the deposition surface. . Thereby, the film thickness difference of the vapor deposition surface periphery of the board | substrate 6 can be reduced.

  Moreover, in the vapor deposition apparatus 1 of the present embodiment, the shape of the substrate support surface 2a of the substrate support member 2 is a spherical shape centered on the vapor deposition source 4, so that the distance from the vapor deposition source 4 to each substrate 6 is also the same. Distance. For this reason, in all the substrates 6 supported by the substrate support member 2, the film thickness difference at the periphery of the deposition surface is reduced, and the film thickness difference between the substrates is also reduced. Further, since the substrate support surface 2a has a spherical shape centered on the vapor deposition source 4, the vapor deposition material scattered from the vapor deposition source 4 is incident on the vapor deposition surface in the vertical direction at the center of each substrate 6. For this reason, the scattered vapor deposition material adheres stably to the vapor deposition surface of each substrate 6.

[Example]
Next, the Example which implemented the vapor deposition apparatus 1 of this embodiment example mentioned above more concretely is described. FIG. 4A is a schematic configuration diagram of a vapor deposition apparatus according to an embodiment.

  A point A in FIG. 4A is a position where the vapor deposition source 4 is arranged. Points B and C indicate the positions of the opposite ends of the substrate support member 2. The point D is the center of the substrate support member 2. Further, the point G is a point on the central axis of the substrate support member 2.

  4A, the radius of curvature R of the substrate support surface 2a is 1146 mm, the distance AB from the vapor deposition source 4 to the substrate support surface 2a on which each substrate 6 is supported is AB = AC = AD = 1146 mm, The outer diameter BC = 1390 mm.

FIG. 4B shows a deposition angle θ1 to the lower end of the deposition surface and a deposition angle θ ₂ to the upper end of each substrate 6 arranged in the first to eighth stages of the substrate support member 2 in the vapor deposition apparatus in the embodiment. FIG. 6 is a diagram illustrating the angle difference θ ₁ −θ ₂ between them. The position closest to the center of the substrate support member 2 (that is, the uppermost position of the dome shape) is defined as the first step, and is extended to the end of the substrate support member 2 (that is, the lowermost step of the dome shape). Eyes, 3rd stage, ... 8th stage. Further, the B side shown in FIG. 4A is B side and the C side shown is C side.

As shown in FIG. 4B, in the vapor deposition apparatus of Example in the center of the evaporation source 4 is dome in the vapor deposition surface of the substrate 6, the deposition angle theta ₂ is equal to the deposition angle theta ₁ and the upper end to the lower end Therefore, it can be seen that the vapor deposition angle differences θ _B and θ _c (= θ ₁ −θ ₂ ) are 0 degrees. And in all the board | substrates 6 hold | maintained from the 1st stage to the 8th stage, the vapor deposition angle in the periphery of the board | substrate 6 is equal.
Thus, in the vapor deposition apparatus of the Example, it turned out that the vapor deposition angle of the board | substrate 6 periphery becomes the same also in the board | substrate 6 and between the board | substrates 6. FIG.

Next, the film thickness of each substrate 6 when a single-layer vapor deposition film was formed on the substrate 6 was confirmed using the vapor deposition apparatus of the example. In this film formation experiment, a test lens having a power of −6.00, a radius of curvature of 47.0 mm, and an outer diameter of 47 mm is used as the substrate 6, and silicon oxide (SiO ₂ ) and zirconium oxide (ZrO ₂ ) are used as vapor deposition materials. The case where it was used was examined.

FIG. 5 is a diagram showing the spectral curves of the first to seventh stage substrates when film formation is performed using SiO ₂ as the vapor deposition material in the examples. FIG. 6 is a diagram showing spectral curves of the first to seventh stage substrates when film formation is performed using ZrO ₂ as a vapor deposition material in the example. The horizontal axis in FIGS. 5 and 6 is the wavelength (nm), and the vertical axis is the reflectance. 5 and 6, the measurement position of the spectral curve in the substrate was 1 cm from the upper end (lens edge) of the substrate and 1 cm from the lower end (lens edge), respectively. 5 and 6 show measurement results when a single-layer deposited film is formed on each substrate.

  As shown in FIGS. 5 and 6, in the vapor deposition apparatus of the example, the spectral curves at the upper end and the lower end of the deposition target surface of the substrate almost coincide with each other. The film thickness ratio in the substrate is also a sufficiently small value. Furthermore, the film thickness d and the refractive index n of each substrate held at each stage were almost the same. The difference in film thickness between the substrates can be eliminated more easily by using a correction plate.

  As described above, in the vapor deposition apparatus 1 according to the present embodiment, it is possible to form a good film even in one substrate 6 or between the substrates held at different positions of the step of the substrate support member 2. . As shown in FIGS. 5 and 6, even when a high-curve lens having a power of −6.00 (that is, a lens having a large curvature radius of the deposition surface) is used, a uniform film is formed on the entire periphery of the deposition surface. It was found that a thick deposited film can be formed.

  Next, as a comparative example, a vapor deposition apparatus in which the configuration of the substrate support member 2 and the position of the vapor deposition source 4 with respect to the substrate support member 2 are different from the vapor deposition apparatus of the embodiment will be described.

[Comparative Example 1]
FIG. 7A is a schematic configuration diagram of a vapor deposition apparatus according to Comparative Example 1. Further, FIG. 7B shows a case where the substrates 6 arranged on the first to eighth stages on the B side (B side) which is the side closest to the evaporation source when the vapor deposition apparatus in Comparative Example 1 is used. The vapor deposition angle θ ₁ to the lower end of the vapor deposition surface, the vapor deposition angle θ ₂ to the upper end, the angle difference θ _B (= θ ₁ −θ ₂ ) between the vapor deposition angles, and the C side (C side), the deposition angle θ ₁ to the lower end of the deposition surface, the deposition angle θ ₂ to the upper end, and the angle difference θ _C (θ ₁ − θ ₂ ). Further, the rotation of the substrate support surface cancels the angle difference to some extent. FIG. 7B also shows the angle difference (synergistic angle difference) at which the angle differences θ _B and θ _C between the B side and the C side cannot be offset even by the rotation of the substrate support surface. The synergistic angle difference shown here is a value (θ _B + θ _C ) obtained by adding the angle differences θ _B and θ _C between the B side and the C side.

The vapor deposition apparatus of Comparative Example 1 is an example in which only the position of the vapor deposition source (indicated by a point A) is different from the vapor deposition apparatus of the embodiment. In this example, the substrate support member 2 is offset in the direction perpendicular to the line connecting the centers.
That is, in Comparative Example 1,
R = 1146mm
AG = 90mm
GD = 1146mm
BC = 1390mm
The vapor deposition apparatus comprised in 1 was used.

In the vapor deposition apparatus of Comparative Example 1, the vapor deposition angle was such that θ ₁ was wider than θ ₂ on the B side and θ ₂ was wider than θ ₁ on the C side. Although the synergistic angle difference θ _B + θ _C is small due to the rotation of the substrate support surface, it can be seen that the synergistic angle difference θ _B + θ _C tends to increase as the substrate 6 is held on the lower side of the substrate support member 2.

Further, as a result of forming a vapor deposition film in the vapor deposition apparatus of Comparative Example 1, the change in color tone between the upper end side and the lower end side from the fifth stage substrate to the eighth stage substrate where the synergistic angle difference θ _B + θ _C widens. It was observed.

[Comparative Example 2]
FIG. 8A is a schematic configuration diagram of a vapor deposition apparatus according to Comparative Example 2. Further, FIG. 8B shows the deposition angle θ ₁ to the lower end of the deposition surface on each substrate 6 arranged on the B side (B side), which is the side closest to the evaporation source, to the lower end, and the upper end. Vapor deposition angle θ ₂ , angle difference θ _B (= θ ₁ −θ ₂ ) between the vapor deposition angles, and C side (C side), which is the side farthest from the evaporation source, are arranged in the first to eighth stages In each of the substrates 6, the deposition angle θ ₁ to the lower end of the deposition surface, the deposition angle θ ₂ to the upper end, the angle difference θ _C (= θ ₁ −θ ₂ ) of the deposition angles, the substrate B side and the C side A synergistic angle difference θ _B + θ _C calculated from the angle differences θ _B and θ _{C of} FIG.

In Comparative Example 2,
R = 1000mm
AG = 90m,
GD = 1146mm
BC = 1350mm
The vapor deposition apparatus comprised in 1 was used.

In the vapor deposition apparatus of Comparative Example 2, the synergistic angle difference θ _B + θ _C between the vapor deposition angles of the upper end and the lower end of the substrate is larger as the substrate 6 is held on the lower side of the substrate support member 2. The synergistic angle difference θ _B + θ _{C of the} deposition angle is larger than that of the first deposition apparatus.

As a result of forming a vapor deposition film in the vapor deposition apparatus of Comparative Example 2, it was confirmed that the colors of the upper end and the lower end of the substrate 6 were clearly different in the stage below the third stage. Further, even in the upper stage from the second stage, although the same color system was used, a change in color tone was confirmed at the upper and lower ends of the substrate 6. In Comparative Example 2, the lower the stage, the greater is the synergistic angle difference θ _B + θ _C between the upper and lower ends of the substrate 6, and the larger the deposition angle θ _{1 at} the lower end of the substrate 6 is. This is because the thickness of the deposited film formed on the upper end of the substrate 6 becomes thinner as the substrate 6 supported in the lower stage.

[Comparative Example 3]
FIG. 9A is a schematic configuration diagram of a vapor deposition apparatus according to Comparative Example 3. 9B shows a deposition angle θ ₁ to the lower end of the deposition surface of each substrate 6 arranged on the first side to the eighth stage on the B side, which is one side from the center of the substrate holding member 2, to the upper end. The deposition angle θ ₂ , the angle difference θ _B (= θ ₁ −θ ₂ ) of the deposition angle, and the B side are the first to eighth steps on the C side opposite to the center of the substrate holding member. Deposition angle θ ₁ to the lower end of the surface to be deposited on each substrate 6, the deposition angle θ ₂ to the upper end, the angle difference θ _C (= θ ₁ −θ ₂ ) between the deposition angles, the substrate B side, The synergistic angle difference θ _B + θ _C calculated from the sum of the C side angle differences θ _B and θ _C is also shown.

The vapor deposition apparatus of Comparative Example 3 is an example in which only the position of the vapor deposition source 4 is different from the vapor deposition apparatus of Comparative Example 2, and the position of the vapor deposition source 4 is changed from the position of Comparative Example 2 on the central axis of the substrate support member 2 ( This is an example indicated by a point A).
That is, in Comparative Example 3,
R = 1000mm
AG = 0mm
GD = 1146mm
BC = 1350mm
The vapor deposition apparatus comprised in 1 was used.

In the vapor deposition apparatus of Comparative Example 3, the angle difference θ ₁ −θ ₂ between the vapor deposition angles at the upper end and the lower end of each substrate 6 was kept at a constant angle of 10 degrees or less in all stages regardless of the rotation of the substrate support member 2. It is. However, since the angle difference due to rotation does not cancel out, the angle difference θ ₁ −θ ₂ always synergizes in the vapor deposition process. In particular, in the lower substrate 6, the synergistic angle difference θ _B + θ _C to the lower end of the substrate 6 tends to be large.

  As a result of forming a vapor deposition film in the vapor deposition apparatus of Comparative Example 3, the colors of the upper and lower ends of the substrates 6 from the fifth stage to the eighth stage are clearly different, and the substrates 6 from the second stage to the fourth stage are different. Then, although the same color system is used at the upper end and the lower end of the substrate 6, the modulation of the color tone was confirmed. In the first-stage substrate 6, the color tone change was slight.

  It can be seen from Comparative Example 3 that the film thickness difference between the deposited films on the periphery of each substrate 6 cannot be sufficiently reduced simply by disposing the deposition source 4 on the central axis of the substrate support member 2.

[Comparative Example 4]
FIG. 10A is a schematic configuration diagram of a vapor deposition apparatus according to Comparative Example 4. FIG. 10B shows the deposition angle θ ₁ to the lower end of the deposition surface and the deposition angle to the upper end of each substrate 6 arranged in the first to eighth stages on the B side that is closest to the evaporation source. θ ₂ , an angle difference θ _B (= θ ₁ −θ ₂ ) between the deposition angles, and the substrates disposed on the first to eighth stages on the C side (C side) which is the side farthest from the evaporation source 6, the deposition angle θ ₁ to the lower end of the deposition surface, the deposition angle θ ₂ to the upper end, the angle difference θ _C (= θ ₁ −θ ₂ ) of the deposition angle, and the angle difference θ between the substrate B side and the C side. _B, synergistic angle difference θ _{B +} θ _C calculated from summing values of theta _C is also shown.

In Comparative Example 4,
R = 1375.53 mm
AG = 90mm
GD = 1146mm
BC = 1390mm
The vapor deposition apparatus comprised in 1 was used.

In the vapor deposition apparatus of Comparative Example 4, the synergistic angle difference θ _B + θ _C between the upper and lower vapor deposition angles of the substrate 6 increases as the substrate 6 is supported on the lower stage of the substrate support member 2. Also, as in Comparative Examples 2 and 3, a vapor deposition apparatus having a substrate supporting surface 2a of the curvature radius R = 1000 mm, although the deposition angle theta ₁ of the lower end of the substrate 6 was in a greater tendency, as in Comparative Example 4 When the radius of curvature R is 1375.53 mm and the curvature radius of the substrate support surface 2a is large, it can be seen that the vapor deposition angle θ _{2 at} the upper end of the substrate 6 increases.

  As a result of forming a vapor deposition film in the vapor deposition apparatus of Comparative Example 4, the colors of the upper and lower ends of the sixth to eighth stage substrates 6 are clearly different, and the third and fifth stage substrates 6 are different. Then, although the same color system is used at the upper end and the lower end of the substrate 6, the modulation of the color tone was confirmed. Further, in the first-stage and second-stage substrates 6, slight color tone modulation was observed.

[Comparative Example 5]
FIG. 11A is a schematic configuration diagram of a vapor deposition apparatus according to Comparative Example 5. FIG. 11B shows a deposition angle θ from the center of the substrate holding member 2 to the lower end of the deposition surface in each substrate 6 arranged on the B side (B side) from the first stage to the eighth stage. _1. Deposition angle θ ₂ to the upper end, an angle difference θ _B (= θ ₁ −θ ₂ ) between the deposition angles, and a C side (C side) that is opposite to the B side across the center of the substrate holding member Of each of the substrates 6 arranged in the first to eighth stages, the deposition angle θ ₁ to the lower end of the deposition surface, the deposition angle θ ₂ to the upper end, and the angle difference θ _C (= θ ₁ −θ) ₂ ) and the synergistic angle difference θ _B + θ _C calculated from the sum of the angle differences θ _B and θ _C between the substrate B side and the C side are also shown.

The vapor deposition apparatus of Comparative Example 5 is an example in which only the position of the vapor deposition source 4 is different from the vapor deposition apparatus of Comparative Example 4, and the position of the vapor deposition source 4 is on the central axis of the substrate support member 2 (indicated by a point A). It is.
That is, in Comparative Example 3,
R = 1375.53 mm
AG = 0mm
GD = 1146mm
BC = 1390mm
The vapor deposition apparatus comprised in 1 was used.

In the vapor deposition apparatus of Comparative Example 5, the synergistic angle difference θ _B + θ _C between the upper and lower vapor deposition angles of each substrate 6 was larger than that of Comparative Example 4. In particular, in the lower substrate 6, the vapor deposition angle θ ₂ toward the upper end of the substrate 6 tends to be large.

  As a result of forming a vapor deposition film in the vapor deposition apparatus of Comparative Example 5, the colors of the upper and lower ends of the substrates 6 from the fourth stage to the eighth stage are clearly different. Then, although the same color system is used at the upper end and the lower end of the substrate 6, the modulation of the color tone was confirmed. In the first-stage substrate 6, a slight change in color tone was confirmed.

  As described above, in the vapor deposition apparatuses of Comparative Examples 1 to 5, the film thickness of the vapor deposition film to be formed can be formed in one substrate 6 or between the substrates 6 supported on different stages of the substrate support member 2. It turned out that it was difficult to make it uniform.

[Comparison result of film formation experiment]
Next, in the vapor deposition apparatus of the example and the vapor deposition apparatus of comparative example 4, the comparison result of the film forming experiment using SiO ₂ as the vapor deposition material is shown. In this experiment, both the vapor deposition apparatus of the example and the vapor deposition apparatus of the comparative example were formed without rotating the substrate support member 2.

  FIG. 12A shows the distance from the central axis of the substrate support member 2 to each substrate, the film thickness, the refractive index, and the film thickness ratio when the vapor deposition apparatus of the example is used. Moreover, FIG. 12B shows the distance from the central axis of the substrate support member 2, the film thickness, of the substrate supported from the first stage to the eighth stage of the substrate support member when the vapor deposition apparatus of Comparative Example 4 is used. The refractive index and the film thickness ratio are shown. 4B showing the embodiment from the center of the substrate support member 2 and the substrate supported on the B side in FIG. 10A showing the comparative example 4 are denoted by B-1, B-2,. The substrates supported from the center of the support member 2 to the side C shown in FIGS. 4A and 10A are indicated by C-1, C-2,... C-8. 13A is a graph showing the film thicknesses of FIGS. 12A and 12B. The horizontal axis indicates the distance from the central axis of the substrate support member 2 to each substrate 6, and the vertical axis indicates the film thickness. Indicates. FIG. 13B is a graph showing the refractive indexes of FIGS. 12A and 12B. The horizontal axis indicates the distance from the central axis of the substrate support member 2 to each substrate 6, and the vertical axis indicates the film thickness. Indicates. The horizontal axis indicates “0” as the point through which the central axis of the substrate support member 2 passes, and the distance from the central axis to the substrate 6 held on one side of the substrate support member 2 is positive. The distance to the substrate 6 held on the other side facing the side is shown as negative. The film thickness and refractive index were measured at the center of the substrate.

As shown in FIG. 13A, in the case of using the vapor deposition apparatus of the example, although the film thickness is slightly small in the substrate 6 supported on the lower side of the substrate support member 2, the film thickness difference between the substrates 6 is Is within the allowable range.
On the other hand, in the case where the vapor deposition apparatus of Comparative Example 4 is used, the substrate 6 supported on one side from the central axis of the substrate support member 2 has a clear film thickness than the substrate 6 supported on the other side. small.

  In addition, as shown in FIG. 13B, the refractive index is the same for all the substrates 6 when the vapor deposition apparatus of the example is used. On the other hand, when the vapor deposition apparatus of Comparative Example 4 is used, there is a substrate 6 having a refractive index that is significantly different from that of the other substrate 6 on the lower side, and a stable refractive index cannot be ensured on the lower side.

Next, a comparison result of a film forming experiment using niobium pentoxide (Nb ₂ O ₅ ) as a vapor deposition material in the vapor deposition apparatus of the example and the vapor deposition apparatus of Comparative Example 4 is shown. In this experiment, both the vapor deposition apparatus of the example and the vapor deposition apparatus of the comparative example were formed without rotating the substrate support member 2.

  FIG. 14A shows the distance, film thickness, refractive index, and film thickness ratio from the central axis of the substrate support member 2 to each substrate 6 when the vapor deposition apparatus of the example is used. FIG. 14B shows the distance, film thickness, refractive index, and film thickness ratio from the central axis of the substrate support member 2 to each substrate 6 when the vapor deposition apparatus of the comparative example is used. 15A is a graph showing the film thicknesses of FIGS. 14A and 14B. The horizontal axis indicates the distance from the central axis of the substrate support member 2 to each substrate 6, and the vertical axis indicates the film thickness. Indicates. FIG. 15B is a graph showing the refractive indexes of FIGS. 14A and 14B. The horizontal axis indicates the distance from the central axis of the substrate support member 2 to each substrate 6, and the vertical axis indicates the film thickness. Indicates.

As can be seen from FIGS. 15A and 15B, the same tendency as in the case of using SiO ₂ was obtained when Nb ₂ O ₅ was used as the vapor deposition material.

Next, a comparison result of a film forming experiment using ZrO ₂ as a vapor deposition material in the vapor deposition apparatus of Example and the vapor deposition apparatus of Comparative Example 4 is shown. In this experiment, both the vapor deposition apparatus of the example and the vapor deposition apparatus of the comparative example were formed without rotating the substrate support member 2.

  FIG. 16A shows the distance, film thickness, refractive index, and film thickness ratio from the central axis of the substrate support member 2 to each substrate 6 when the vapor deposition apparatus of the example is used. FIG. 16B shows the distance, film thickness, refractive index, and film thickness ratio from the central axis of the substrate support member 2 to each substrate 6 when the vapor deposition apparatus of the comparative example is used. FIG. 17A is a graph showing the film thicknesses of FIGS. 16A and 16B. The horizontal axis indicates the distance from the central axis of the substrate support member 2 to each substrate 6, and the vertical axis indicates the film thickness. Indicates. FIG. 17B is a graph showing the refractive indexes of FIGS. 16A and 16B. The horizontal axis indicates the distance from the central axis of the substrate support member 2 to each substrate 6, and the vertical axis indicates the film thickness. Indicates.

As can be seen from FIGS. 17A and 17B, when ZrO ₂ was used as the vapor deposition material, the same tendency as when SiO ₂ and Nb ₂ O ₅ were used was obtained.

  As mentioned above, in the vapor deposition apparatus of an Example, a film thickness and a refractive index can be equalized between each board | substrate 6 supported by the board | substrate support member 2 irrespective of the kind of vapor deposition material.

  Thus, in the vapor deposition apparatus of the present invention, a uniform vapor deposition film can be formed on the entire periphery of the vapor deposition surface of each substrate 6 supported by the substrate support member 2, and the substrate support member 2. It is possible to make the film thickness and the refractive index uniform in all the substrates 6 supported by the above. For this reason, according to the vapor deposition apparatus of this invention, a vapor deposition spot does not arise in each board | substrate, but the board | substrate which has the stable reflective characteristic can be manufactured. In addition, according to the present invention, a uniform vapor deposition film can be formed on each substrate even in a large vapor deposition apparatus that forms a vapor deposition film on 100 or more substrates at a time.

  DESCRIPTION OF SYMBOLS 1 ... Deposition apparatus, 2 ... Substrate support member, 2a ... Substrate support surface, 3 ... Holder, 4 ... Deposition source, 5 ... Dome head, 6 ... Substrate, 7 ... Vacuum chamber, 12 ... Substrate support member, 16 ... Substrate, R ... Radiation radius

Claims (4)

A substrate support member for supporting a plurality of substrates;
A deposition source that scatters a desired deposition material on the deposition surface of the substrate supported by the substrate support member, and an angle from the deposition source with respect to the periphery of the deposition surface of each substrate is around the deposition surface. A deposition source arranged to be substantially the same across
A vapor deposition apparatus. The substrate support member is configured to have a substrate support surface having a predetermined curvature facing the vapor deposition source side,
The plurality of substrates are supported on the substrate support surface such that the deposition surface faces the deposition source side,
The vapor deposition apparatus according to claim 1, wherein the vapor deposition source is disposed at a position separated from a position of all the substrates supported by the substrate support member by a curvature radius of the substrate support surface. The vapor deposition apparatus according to claim 1, wherein the substrate support member is rotatable about a central axis of the substrate support member. The correction board which correct | amends the scattering direction of the vapor deposition material scattered from the said vapor deposition source is arrange | positioned in the desired position between the said board | substrate support member and the said vapor deposition source. Vapor deposition equipment.

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