JP5250181B2 - 半導体装置の作製方法 - Google Patents
半導体装置の作製方法 Download PDFInfo
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- JP5250181B2 JP5250181B2 JP2005134751A JP2005134751A JP5250181B2 JP 5250181 B2 JP5250181 B2 JP 5250181B2 JP 2005134751 A JP2005134751 A JP 2005134751A JP 2005134751 A JP2005134751 A JP 2005134751A JP 5250181 B2 JP5250181 B2 JP 5250181B2
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- laser
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- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 description 2
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- 125000001424 substituent group Chemical group 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910052689 Holmium Inorganic materials 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
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- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
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- 125000000217 alkyl group Chemical group 0.000 description 1
- 239000005407 aluminoborosilicate glass Substances 0.000 description 1
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- 229910052788 barium Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
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- 239000000919 ceramic Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
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- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
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- CNQCVBJFEGMYDW-UHFFFAOYSA-N lawrencium atom Chemical compound [Lr] CNQCVBJFEGMYDW-UHFFFAOYSA-N 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
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- 125000000962 organic group Chemical group 0.000 description 1
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- 229910052697 platinum Inorganic materials 0.000 description 1
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- 230000001737 promoting effect Effects 0.000 description 1
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- 229910052708 sodium Inorganic materials 0.000 description 1
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- 238000001228 spectrum Methods 0.000 description 1
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- 229910001220 stainless steel Inorganic materials 0.000 description 1
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Images
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- Thin Film Transistor (AREA)
- Recrystallisation Techniques (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005134751A JP5250181B2 (ja) | 2004-05-06 | 2005-05-06 | 半導体装置の作製方法 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004137374 | 2004-05-06 | ||
| JP2004137374 | 2004-05-06 | ||
| JP2005134751A JP5250181B2 (ja) | 2004-05-06 | 2005-05-06 | 半導体装置の作製方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2005347741A JP2005347741A (ja) | 2005-12-15 |
| JP2005347741A5 JP2005347741A5 (enExample) | 2008-04-24 |
| JP5250181B2 true JP5250181B2 (ja) | 2013-07-31 |
Family
ID=35499781
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2005134751A Expired - Fee Related JP5250181B2 (ja) | 2004-05-06 | 2005-05-06 | 半導体装置の作製方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP5250181B2 (enExample) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100541722C (zh) | 2004-03-26 | 2009-09-16 | 株式会社半导体能源研究所 | 激光辐照方法和激光辐照装置 |
| WO2006118312A1 (en) | 2005-05-02 | 2006-11-09 | Semiconductor Energy Laboratory Co., Ltd. | Laser irradiation apparatus and laser irradiation method |
| CN101331592B (zh) | 2005-12-16 | 2010-06-16 | 株式会社半导体能源研究所 | 激光照射设备、激光照射方法和半导体装置的制造方法 |
| JP5137388B2 (ja) * | 2005-12-16 | 2013-02-06 | 株式会社半導体エネルギー研究所 | レーザ照射装置、レーザ照射方法及び半導体装置の作製方法 |
| US20090046757A1 (en) * | 2007-08-16 | 2009-02-19 | Semiconductor Energy Laboratory Co., Ltd. | Laser irradiation apparatus, laser irradiation method, and manufacturing method of semiconductor device |
| US8598050B2 (en) * | 2008-06-26 | 2013-12-03 | Ihi Corporation | Laser annealing method and apparatus |
| JP2010212530A (ja) * | 2009-03-12 | 2010-09-24 | Fuji Electric Systems Co Ltd | 半導体素子の製造方法 |
| JP5595021B2 (ja) * | 2009-12-03 | 2014-09-24 | 住友重機械工業株式会社 | レーザ処理装置 |
| KR102388723B1 (ko) * | 2015-08-07 | 2022-04-21 | 삼성디스플레이 주식회사 | 레이저 어닐링 장치 및 이를 이용한 디스플레이 장치 제조방법 |
| KR102463885B1 (ko) * | 2015-10-21 | 2022-11-07 | 삼성디스플레이 주식회사 | 레이저 어닐링 장치 및 이를 이용한 디스플레이 장치 제조방법 |
| WO2018189900A1 (ja) * | 2017-04-14 | 2018-10-18 | 堺ディスプレイプロダクト株式会社 | 光照射装置 |
| KR102836621B1 (ko) * | 2020-09-01 | 2025-07-21 | 삼성디스플레이 주식회사 | 광학계 및 이를 포함하는 레이저 조사 장치 |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4443646B2 (ja) * | 1998-06-04 | 2010-03-31 | 東芝モバイルディスプレイ株式会社 | 多結晶半導体膜の製造方法 |
| JP4397571B2 (ja) * | 2001-09-25 | 2010-01-13 | 株式会社半導体エネルギー研究所 | レーザ照射方法およびレーザ照射装置、並びに半導体装置の作製方法 |
| US6962860B2 (en) * | 2001-11-09 | 2005-11-08 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing a semiconductor device |
| JP4503246B2 (ja) * | 2002-06-25 | 2010-07-14 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP4813743B2 (ja) * | 2002-07-24 | 2011-11-09 | 株式会社 日立ディスプレイズ | 画像表示装置の製造方法 |
| JP2004103628A (ja) * | 2002-09-05 | 2004-04-02 | Hitachi Ltd | レーザアニール装置及びｔｆｔ基板のレーザアニール方法 |
| JP2005217209A (ja) * | 2004-01-30 | 2005-08-11 | Hitachi Ltd | レーザアニール方法およびレーザアニール装置 |
| JP4610201B2 (ja) * | 2004-01-30 | 2011-01-12 | 住友重機械工業株式会社 | レーザ照射装置 |
-
2005
- 2005-05-06 JP JP2005134751A patent/JP5250181B2/ja not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JP2005347741A (ja) | 2005-12-15 |
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