JP5250181B2 - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法 Download PDF

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Publication number
JP5250181B2
JP5250181B2 JP2005134751A JP2005134751A JP5250181B2 JP 5250181 B2 JP5250181 B2 JP 5250181B2 JP 2005134751 A JP2005134751 A JP 2005134751A JP 2005134751 A JP2005134751 A JP 2005134751A JP 5250181 B2 JP5250181 B2 JP 5250181B2
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Japan
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laser
semiconductor film
region
laser beam
length
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Expired - Fee Related
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JP2005134751A
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Japanese (ja)
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JP2005347741A5 (enExample
JP2005347741A (ja
Inventor
幸一郎 田中
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2005134751A priority Critical patent/JP5250181B2/ja
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Publication of JP2005347741A5 publication Critical patent/JP2005347741A5/ja
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  • Recrystallisation Techniques (AREA)
JP2005134751A 2004-05-06 2005-05-06 半導体装置の作製方法 Expired - Fee Related JP5250181B2 (ja)

Priority Applications (1)

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JP2005134751A JP5250181B2 (ja) 2004-05-06 2005-05-06 半導体装置の作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2004137374 2004-05-06
JP2004137374 2004-05-06
JP2005134751A JP5250181B2 (ja) 2004-05-06 2005-05-06 半導体装置の作製方法

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JP2005347741A JP2005347741A (ja) 2005-12-15
JP2005347741A5 JP2005347741A5 (enExample) 2008-04-24
JP5250181B2 true JP5250181B2 (ja) 2013-07-31

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JP2005134751A Expired - Fee Related JP5250181B2 (ja) 2004-05-06 2005-05-06 半導体装置の作製方法

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Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1728271B1 (en) 2004-03-26 2016-06-08 Semiconductor Energy Laboratory Co, Ltd. Laser irradiation method and laser irradiation apparatus
KR101284201B1 (ko) 2005-05-02 2013-07-09 가부시키가이샤 한도오따이 에네루기 켄큐쇼 레이저 조사 장치 및 레이저 조사 방법
KR101371265B1 (ko) 2005-12-16 2014-03-07 가부시키가이샤 한도오따이 에네루기 켄큐쇼 레이저 조사 장치, 레이저 조사 방법, 및 반도체 장치 제조방법
JP5137388B2 (ja) * 2005-12-16 2013-02-06 株式会社半導体エネルギー研究所 レーザ照射装置、レーザ照射方法及び半導体装置の作製方法
US20090046757A1 (en) * 2007-08-16 2009-02-19 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation apparatus, laser irradiation method, and manufacturing method of semiconductor device
CN102077318B (zh) * 2008-06-26 2013-03-27 株式会社Ihi 激光退火方法及装置
JP2010212530A (ja) * 2009-03-12 2010-09-24 Fuji Electric Systems Co Ltd 半導体素子の製造方法
JP5595021B2 (ja) * 2009-12-03 2014-09-24 住友重機械工業株式会社 レーザ処理装置
KR102388723B1 (ko) * 2015-08-07 2022-04-21 삼성디스플레이 주식회사 레이저 어닐링 장치 및 이를 이용한 디스플레이 장치 제조방법
KR102463885B1 (ko) * 2015-10-21 2022-11-07 삼성디스플레이 주식회사 레이저 어닐링 장치 및 이를 이용한 디스플레이 장치 제조방법
WO2018189900A1 (ja) * 2017-04-14 2018-10-18 堺ディスプレイプロダクト株式会社 光照射装置
KR102836621B1 (ko) * 2020-09-01 2025-07-21 삼성디스플레이 주식회사 광학계 및 이를 포함하는 레이저 조사 장치

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4443646B2 (ja) * 1998-06-04 2010-03-31 東芝モバイルディスプレイ株式会社 多結晶半導体膜の製造方法
JP4397571B2 (ja) * 2001-09-25 2010-01-13 株式会社半導体エネルギー研究所 レーザ照射方法およびレーザ照射装置、並びに半導体装置の作製方法
JP3980465B2 (ja) * 2001-11-09 2007-09-26 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4503246B2 (ja) * 2002-06-25 2010-07-14 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4813743B2 (ja) * 2002-07-24 2011-11-09 株式会社 日立ディスプレイズ 画像表示装置の製造方法
JP2004103628A (ja) * 2002-09-05 2004-04-02 Hitachi Ltd レーザアニール装置及びｔｆｔ基板のレーザアニール方法
JP2005217209A (ja) * 2004-01-30 2005-08-11 Hitachi Ltd レーザアニール方法およびレーザアニール装置
JP4610201B2 (ja) * 2004-01-30 2011-01-12 住友重機械工業株式会社 レーザ照射装置

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JP2005347741A (ja) 2005-12-15

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