JP5244916B2 - 損傷のない半導体の湿式洗浄のための高い負のゼータ電位の多面体シルセスキオキサン組成物および方法 - Google Patents

損傷のない半導体の湿式洗浄のための高い負のゼータ電位の多面体シルセスキオキサン組成物および方法 Download PDF

Info

Publication number
JP5244916B2
JP5244916B2 JP2010534130A JP2010534130A JP5244916B2 JP 5244916 B2 JP5244916 B2 JP 5244916B2 JP 2010534130 A JP2010534130 A JP 2010534130A JP 2010534130 A JP2010534130 A JP 2010534130A JP 5244916 B2 JP5244916 B2 JP 5244916B2
Authority
JP
Japan
Prior art keywords
composition
polyhedral silsesquioxane
zeta potential
metal ions
water
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2010534130A
Other languages
English (en)
Japanese (ja)
Other versions
JP2011503326A5 (https=
JP2011503326A (ja
Inventor
ハオ，ジャンジュン
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sachem Inc
Original Assignee
Sachem Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sachem Inc filed Critical Sachem Inc
Publication of JP2011503326A publication Critical patent/JP2011503326A/ja
Publication of JP2011503326A5 publication Critical patent/JP2011503326A5/ja
Application granted granted Critical
Publication of JP5244916B2 publication Critical patent/JP5244916B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/02—Inorganic compounds ; Elemental compounds
    • C11D3/04—Water-soluble compounds
    • C11D3/044—Hydroxides or bases
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D11/00—Special methods for preparing compositions containing mixtures of detergents
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/02—Inorganic compounds ; Elemental compounds
    • C11D3/04—Water-soluble compounds
    • C11D3/08—Silicates
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/162—Organic compounds containing Si
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/39—Organic or inorganic per-compounds
    • C11D3/3947—Liquid compositions
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/395—Bleaching agents
    • C11D3/3956—Liquid compositions
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/02—Inorganic compounds
    • C11D7/04—Water-soluble compounds
    • C11D7/06—Hydroxides
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/02—Inorganic compounds
    • C11D7/04—Water-soluble compounds
    • C11D7/10—Salts
    • C11D7/14—Silicates
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10—Objects to be cleaned
    • C11D2111/14—Hard surfaces
    • C11D2111/22—Electronic devices, e.g. PCBs or semiconductors

Landscapes

  • Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Wood Science & Technology (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Detergent Compositions (AREA)
JP2010534130A 2007-11-13 2008-11-12 損傷のない半導体の湿式洗浄のための高い負のゼータ電位の多面体シルセスキオキサン組成物および方法 Active JP5244916B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US98770607P 2007-11-13 2007-11-13
US60/987,706 2007-11-13
PCT/US2008/083161 WO2009064745A1 (en) 2007-11-13 2008-11-12 High negative zeta potential polyhedral silsesquioxane composition and method for damage free semiconductor wet clean

Publications (3)

Publication Number Publication Date
JP2011503326A JP2011503326A (ja) 2011-01-27
JP2011503326A5 JP2011503326A5 (https=) 2011-12-01
JP5244916B2 true JP5244916B2 (ja) 2013-07-24

Family

ID=40469771

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010534130A Active JP5244916B2 (ja) 2007-11-13 2008-11-12 損傷のない半導体の湿式洗浄のための高い負のゼータ電位の多面体シルセスキオキサン組成物および方法

Country Status (8)

Country Link
US (1) US7976638B2 (https=)
EP (1) EP2215203B1 (https=)
JP (1) JP5244916B2 (https=)
KR (1) KR101569338B1 (https=)
CN (1) CN101855334B (https=)
ES (1) ES2386692T3 (https=)
TW (1) TWI472579B (https=)
WO (1) WO2009064745A1 (https=)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7129199B2 (en) * 2002-08-12 2006-10-31 Air Products And Chemicals, Inc. Process solutions containing surfactants
US8518865B2 (en) * 2009-08-31 2013-08-27 Air Products And Chemicals, Inc. Water-rich stripping and cleaning formulation and method for using same
US9257270B2 (en) * 2011-08-15 2016-02-09 Ekc Technology Method and composition for removing resist, etch residue, and copper oxide from substrates having copper, metal hardmask and low-k dielectric material
KR101857807B1 (ko) * 2011-08-22 2018-06-19 동우 화인켐 주식회사 레지스트 박리액 조성물 및 이를 이용한 레지스트의 박리방법
KR101880300B1 (ko) * 2011-08-23 2018-08-17 동우 화인켐 주식회사 평판 디스플레이 제조에 필요한 세정액 조성물 및 이를 이용한 세정방법
KR101880305B1 (ko) * 2011-12-16 2018-07-20 동우 화인켐 주식회사 전자재료용 세정액 조성물
KR101880306B1 (ko) * 2011-12-19 2018-07-20 동우 화인켐 주식회사 전자재료용 세정액 조성물
KR101965904B1 (ko) * 2011-12-20 2019-08-14 동우 화인켐 주식회사 액정 표시장치용 어레이 기판 제조방법
KR101978521B1 (ko) * 2012-10-05 2019-05-15 동우 화인켐 주식회사 갈바닉 부식을 억제하는 포토레지스트 박리액 조성물
KR101957524B1 (ko) * 2012-12-31 2019-06-19 동우 화인켐 주식회사 포토레지스트 박리액 조성물
KR101957525B1 (ko) * 2012-12-31 2019-06-19 동우 화인켐 주식회사 포토레지스트 박리액 조성물
JP6460729B2 (ja) * 2014-10-31 2019-01-30 富士フイルム株式会社 基板処理方法、及び、半導体素子の製造方法
KR102766830B1 (ko) * 2018-01-16 2025-02-14 가부시키가이샤 도쿠야마 차아염소산 이온을 포함하는 반도체 웨이퍼의 처리액
JP6552676B2 (ja) * 2018-05-10 2019-07-31 富士フイルム株式会社 ルテニウム含有膜が形成された基板におけるルテニウム付着物除去用除去液
KR102002276B1 (ko) * 2019-05-03 2019-07-19 동우 화인켐 주식회사 갈바닉 부식을 억제하는 포토레지스트 박리액 조성물
JP2021042326A (ja) * 2019-09-12 2021-03-18 日華化学株式会社 電解洗浄剤及び金属の洗浄方法
CN120060857A (zh) * 2019-09-27 2025-05-30 株式会社德山 钌的半导体用处理液及其制造方法
WO2021060234A1 (ja) 2019-09-27 2021-04-01 株式会社トクヤマ ＲｕＯ４ガスの発生抑制剤及びＲｕＯ４ガスの発生抑制方法
KR102273127B1 (ko) * 2020-09-21 2021-07-05 주식회사 이엔에프테크놀로지 실리콘 질화막 식각 조성물 및 이를 이용한 방법
KR102345211B1 (ko) * 2020-09-21 2022-01-03 주식회사 이엔에프테크놀로지 실리콘 질화막 식각 조성물 및 이를 이용한 방법
US20240067878A1 (en) * 2022-08-30 2024-02-29 Tokuyama Corporation Silicon etching solution and method for producing silicon etching solution, method for treating substrate, and method for producing silicon device

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3837397A1 (de) * 1988-11-03 1990-05-10 Wacker Chemie Gmbh Neue organooligosilsesquioxane
US5466389A (en) * 1994-04-20 1995-11-14 J. T. Baker Inc. PH adjusted nonionic surfactant-containing alkaline cleaner composition for cleaning microelectronics substrates
US5561105A (en) * 1995-05-08 1996-10-01 Ocg Microelectronic Materials, Inc. Chelating reagent containing photoresist stripper composition
US5759973A (en) * 1996-09-06 1998-06-02 Olin Microelectronic Chemicals, Inc. Photoresist stripping and cleaning compositions
US5817610A (en) * 1996-09-06 1998-10-06 Olin Microelectronic Chemicals, Inc. Non-corrosive cleaning composition for removing plasma etching residues
US6066609A (en) * 1997-07-31 2000-05-23 Siemens Aktiengesellschaft Aqueous solution for cleaning a semiconductor substrate
US5935871A (en) * 1997-08-22 1999-08-10 Motorola, Inc. Process for forming a semiconductor device
US6261466B1 (en) * 1997-12-11 2001-07-17 Shipley Company, L.L.C. Composition for circuit board manufacture
DE69941088D1 (de) * 1998-05-18 2009-08-20 Mallinckrodt Baker Inc Alkalische, silikat enthaltende reinigungslösungen für mikroelektronische substrate
JP2000091289A (ja) * 1998-09-10 2000-03-31 Hitachi Ltd 半導体集積回路装置の製造方法
US6475966B1 (en) * 2000-02-25 2002-11-05 Shipley Company, L.L.C. Plasma etching residue removal
EP1138726B1 (en) * 2000-03-27 2005-01-12 Shipley Company LLC Polymer remover
US6599370B2 (en) 2000-10-16 2003-07-29 Mallinckrodt Inc. Stabilized alkaline compositions for cleaning microelectronic substrates
MY131912A (en) * 2001-07-09 2007-09-28 Avantor Performance Mat Inc Ammonia-free alkaline microelectronic cleaning compositions with improved substrate compatibility
TWI276682B (en) * 2001-11-16 2007-03-21 Mitsubishi Chem Corp Substrate surface cleaning liquid mediums and cleaning method
US20040220066A1 (en) 2003-05-01 2004-11-04 Rohm And Haas Electronic Materials, L.L.C. Stripper
WO2005001016A1 (en) * 2003-06-27 2005-01-06 Interuniversitair Microelektronica Centrum (Imec) Semiconductor cleaning solution
US7576169B2 (en) * 2003-10-23 2009-08-18 The Regents Of The University Of Michigan Facile synthesis of polyhedral silsesquioxane anions and use thereof
US7887641B2 (en) * 2004-01-09 2011-02-15 Ecolab Usa Inc. Neutral or alkaline medium chain peroxycarboxylic acid compositions and methods employing them
US8338087B2 (en) * 2004-03-03 2012-12-25 Advanced Technology Materials, Inc Composition and process for post-etch removal of photoresist and/or sacrificial anti-reflective material deposited on a substrate
US7320956B2 (en) * 2004-04-01 2008-01-22 3M Innovative Properties Company Aqueous cleaning/treatment composition for fibrous substrates
US20060226122A1 (en) * 2005-04-08 2006-10-12 Wojtczak William A Selective wet etching of metal nitrides
WO2007044446A1 (en) 2005-10-05 2007-04-19 Advanced Technology Materials, Inc. Oxidizing aqueous cleaner for the removal of post-etch residues

Also Published As

Publication number Publication date
WO2009064745A1 (en) 2009-05-22
US7976638B2 (en) 2011-07-12
US20090120458A1 (en) 2009-05-14
TWI472579B (zh) 2015-02-11
JP2011503326A (ja) 2011-01-27
CN101855334B (zh) 2013-03-27
EP2215203B1 (en) 2012-05-16
EP2215203A1 (en) 2010-08-11
KR101569338B1 (ko) 2015-11-17
TW200932832A (en) 2009-08-01
HK1147279A1 (en) 2011-08-05
CN101855334A (zh) 2010-10-06
KR20100091974A (ko) 2010-08-19
ES2386692T3 (es) 2012-08-27

Similar Documents

Publication Publication Date Title
JP5244916B2 (ja) 損傷のない半導体の湿式洗浄のための高い負のゼータ電位の多面体シルセスキオキサン組成物および方法
TWI714013B (zh) 於製造一半導體裝置時用於從一矽-鍺/鍺堆疊選擇性移除矽-鍺合金的蝕刻溶液
JP6503102B2 (ja) 窒化チタンハードマスク及びエッチ残留物除去
TWI683037B (zh) 於製造一半導體裝置時用於選擇性移除矽氮化物的蝕刻溶液
US11085011B2 (en) Post CMP cleaning compositions for ceria particles
JP7262596B2 (ja) セリア除去用組成物
TWI693305B (zh) 於製造一半導體裝置時用於從矽-鍺/矽堆疊同時移除矽及矽-鍺合金的蝕刻溶液
CN108485840A (zh) 用于去除表面上的残余物的清洗调配物
TWI816379B (zh) 於製造一半導體裝置時用於從一矽-鍺/矽堆疊選擇性移除矽-鍺合金的蝕刻溶液
JP2022513197A (ja) 化学機械研磨後洗浄組成物
CN112996893A (zh) 化学机械研磨后(post cmp)清洁组合物
KR20050075758A (ko) 초임계 이산화탄소/케미컬 조성을 이용한 패턴화된실리콘/실리콘다이옥시드 상 파티클 오염의 제거
TW202248413A (zh) 清潔組合物
WO2018169016A1 (ja) 半導体デバイス用基板の洗浄剤組成物、半導体デバイス用基板の洗浄方法、半導体デバイス用基板の製造方法及び半導体デバイス用基板
JP4576927B2 (ja) 洗浄用組成物及び洗浄方法
HK1147279B (en) High negative zeta potential polyhedral silsesquioxane composition and method for damage free semiconductor wet clean

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20111012

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20111012

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20130402

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20130408

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20160412

Year of fee payment: 3

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

Ref document number: 5244916

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250