JP5238132B2 - 半導体装置、モジュール、および電子機器 - Google Patents

半導体装置、モジュール、および電子機器 Download PDF

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Publication number
JP5238132B2
JP5238132B2 JP2006025676A JP2006025676A JP5238132B2 JP 5238132 B2 JP5238132 B2 JP 5238132B2 JP 2006025676 A JP2006025676 A JP 2006025676A JP 2006025676 A JP2006025676 A JP 2006025676A JP 5238132 B2 JP5238132 B2 JP 5238132B2
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film
pattern
region
semiconductor layer
substrate
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Japanese (ja)
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JP2006245557A (ja
JP2006245557A5 (enExample
Inventor
慎志 前川
秀明 桑原
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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  • Liquid Crystal (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Electroluminescent Light Sources (AREA)
  • Thin Film Transistor (AREA)
JP2006025676A 2005-02-03 2006-02-02 半導体装置、モジュール、および電子機器 Expired - Fee Related JP5238132B2 (ja)

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JP2006025676A JP5238132B2 (ja) 2005-02-03 2006-02-02 半導体装置、モジュール、および電子機器

Applications Claiming Priority (3)

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JP2005027312 2005-02-03
JP2005027312 2005-02-03
JP2006025676A JP5238132B2 (ja) 2005-02-03 2006-02-02 半導体装置、モジュール、および電子機器

Related Child Applications (3)

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JP2010041740A Division JP2010166068A (ja) 2005-02-03 2010-02-26 半導体装置
JP2012125668A Division JP5674712B2 (ja) 2005-02-03 2012-06-01 発光装置、モジュール及び電子機器
JP2012264150A Division JP2013084969A (ja) 2005-02-03 2012-12-03 半導体装置、モジュール、及び電子機器

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JP2006245557A JP2006245557A (ja) 2006-09-14
JP2006245557A5 JP2006245557A5 (enExample) 2009-01-15
JP5238132B2 true JP5238132B2 (ja) 2013-07-17

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Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7858451B2 (en) 2005-02-03 2010-12-28 Semiconductor Energy Laboratory Co., Ltd. Electronic device, semiconductor device and manufacturing method thereof
EP1764770A3 (en) * 2005-09-16 2012-03-14 Semiconductor Energy Laboratory Co., Ltd. Display device and driving method of display device
CN100461433C (zh) * 2007-01-04 2009-02-11 北京京东方光电科技有限公司 一种tft阵列结构及其制造方法
JP2008176095A (ja) * 2007-01-19 2008-07-31 Semiconductor Energy Lab Co Ltd パターン形成方法及び薄膜トランジスタの作製方法
US8816484B2 (en) * 2007-02-09 2014-08-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP5315822B2 (ja) * 2008-07-09 2013-10-16 コニカミノルタ株式会社 薄膜トランジスタの製造方法及びこれにより製造された電子デバイス
TWI469354B (zh) 2008-07-31 2015-01-11 Semiconductor Energy Lab 半導體裝置及其製造方法
WO2010017088A1 (en) * 2008-08-04 2010-02-11 The Trustees Of Princeton University Hybrid dielectric material for thin film transistors
JP5627071B2 (ja) * 2008-09-01 2014-11-19 株式会社半導体エネルギー研究所 半導体装置の作製方法
EP2172977A1 (en) 2008-10-03 2010-04-07 Semiconductor Energy Laboratory Co., Ltd. Display device
KR101064402B1 (ko) * 2009-01-12 2011-09-14 삼성모바일디스플레이주식회사 박막 트랜지스터, 그의 제조 방법 및 박막 트랜지스터를 구비하는 평판 표시 장치
JP5663231B2 (ja) * 2009-08-07 2015-02-04 株式会社半導体エネルギー研究所 発光装置
US8912080B2 (en) * 2011-01-12 2014-12-16 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of the semiconductor device
JP5639514B2 (ja) 2011-03-24 2014-12-10 株式会社東芝 表示装置
JP2019049748A (ja) * 2018-11-28 2019-03-28 株式会社半導体エネルギー研究所 液晶表示装置

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61108171A (ja) * 1984-11-01 1986-05-26 Toshiba Corp 薄膜電界効果トランジスタ
JPH08176177A (ja) * 1994-12-27 1996-07-09 Mitsubishi Materials Corp Ｐｔ膜形成用組成物、並びに、この組成物より形成したＰｔ膜及びＰｔ膜パターン
JP4236716B2 (ja) * 1997-09-29 2009-03-11 株式会社半導体エネルギー研究所 半導体装置
JP2000022156A (ja) * 1998-06-30 2000-01-21 Sanyo Electric Co Ltd 薄膜トランジスタ及びそのアレイ
JP2000258921A (ja) * 1999-03-10 2000-09-22 Canon Inc パターン形成方法およびその形成パターン
JP4250345B2 (ja) * 2000-02-08 2009-04-08 キヤノン株式会社 導電性膜形成用組成物、導電性膜の形成方法および画像形成装置の製造方法
JP4570278B2 (ja) * 2000-08-28 2010-10-27 シャープ株式会社 アクティブマトリクス基板
JP4678933B2 (ja) * 2000-11-07 2011-04-27 株式会社半導体エネルギー研究所 半導体装置の作製方法
KR100878236B1 (ko) * 2002-06-12 2009-01-13 삼성전자주식회사 금속 패턴의 형성 방법 및 이를 이용한 박막 트랜지스터기판의 제조 방법
KR100918180B1 (ko) * 2003-03-04 2009-09-22 삼성전자주식회사 쉬프트 레지스터

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