JP5231395B2 - ドーズ均一性の補正技術 - Google Patents

ドーズ均一性の補正技術 Download PDF

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Publication number
JP5231395B2
JP5231395B2 JP2009507717A JP2009507717A JP5231395B2 JP 5231395 B2 JP5231395 B2 JP 5231395B2 JP 2009507717 A JP2009507717 A JP 2009507717A JP 2009507717 A JP2009507717 A JP 2009507717A JP 5231395 B2 JP5231395 B2 JP 5231395B2
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JP
Japan
Prior art keywords
ion implantation
semiconductor material
uniform
wafer
measuring
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2009507717A
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English (en)
Japanese (ja)
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JP2009535814A5 (enExample
JP2009535814A (ja
Inventor
ハーリング，マイク
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Axcelis Technologies Inc
Original Assignee
Axcelis Technologies Inc
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Filing date
Publication date
Application filed by Axcelis Technologies Inc filed Critical Axcelis Technologies Inc
Publication of JP2009535814A publication Critical patent/JP2009535814A/ja
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Application granted granted Critical
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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/302—Controlling tubes by external information, e.g. programme control
    • H01J37/3023—Programme control
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
    • H01J2237/202—Movement
    • H01J2237/20221—Translation
    • H01J2237/20228—Mechanical X-Y scanning
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/304—Controlling tubes
    • H01J2237/30472—Controlling the beam
    • H01J2237/30483—Scanning
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/31701—Ion implantation
    • H01J2237/31703—Dosimetry

Landscapes

  • Analytical Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Physical Vapour Deposition (AREA)
JP2009507717A 2006-04-26 2007-04-13 ドーズ均一性の補正技術 Expired - Fee Related JP5231395B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US79497506P 2006-04-26 2006-04-26
US60/794,975 2006-04-26
PCT/US2007/009257 WO2007127084A1 (en) 2006-04-26 2007-04-13 Dose uniformity correction technique

Publications (3)

Publication Number Publication Date
JP2009535814A JP2009535814A (ja) 2009-10-01
JP2009535814A5 JP2009535814A5 (enExample) 2013-03-14
JP5231395B2 true JP5231395B2 (ja) 2013-07-10

Family

ID=38445799

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009507717A Expired - Fee Related JP5231395B2 (ja) 2006-04-26 2007-04-13 ドーズ均一性の補正技術

Country Status (5)

Country Link
US (1) US7692164B2 (enExample)
JP (1) JP5231395B2 (enExample)
KR (1) KR101353011B1 (enExample)
TW (1) TWI435378B (enExample)
WO (1) WO2007127084A1 (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7915597B2 (en) * 2008-03-18 2011-03-29 Axcelis Technologies, Inc. Extraction electrode system for high current ion implanter
US8241924B2 (en) * 2009-02-27 2012-08-14 Taiwan Semiconductor Manufacturing Company, Ltd. Method and system for controlling an implantation process
US8581217B2 (en) * 2010-10-08 2013-11-12 Advanced Ion Beam Technology, Inc. Method for monitoring ion implantation
US20140161651A1 (en) * 2012-12-11 2014-06-12 Micropump, Inc, a Unit of IDEX Corporation Compact integrated-drive pumps
US9105443B2 (en) 2013-11-20 2015-08-11 Tel Epion Inc. Multi-step location specific process for substrate edge profile correction for GCIB system
US10186449B2 (en) 2016-12-31 2019-01-22 Applied Materials, Inc. Apparatus and methods for wafer rotation to improve spatial ALD process uniformity
WO2018140789A1 (en) * 2017-01-27 2018-08-02 Tel Fsi, Inc. Systems and methods for rotating and translating a substrate in a process chamber
JP6686962B2 (ja) * 2017-04-25 2020-04-22 信越半導体株式会社 貼り合わせウェーハの製造方法
CN117878003B (zh) * 2024-01-12 2025-08-08 西安奕斯伟材料科技股份有限公司 调整晶圆的参数的方法、装置、设备及计算机存储介质

Family Cites Families (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4593200A (en) * 1984-03-06 1986-06-03 Mcguire Iii Edward L Scan controller for ion implanter device
US4980562A (en) * 1986-04-09 1990-12-25 Varian Associates, Inc. Method and apparatus for high efficiency scanning in an ion implanter
US4736107A (en) * 1986-09-24 1988-04-05 Eaton Corporation Ion beam implanter scan control system
US4965862A (en) * 1988-05-18 1990-10-23 Varian Associates, Inc. Disk scanning apparatus for batch ion implanters
JPH02160354A (ja) * 1988-12-12 1990-06-20 Fuji Electric Co Ltd イオン注入制御装置
US5311028A (en) * 1990-08-29 1994-05-10 Nissin Electric Co., Ltd. System and method for producing oscillating magnetic fields in working gaps useful for irradiating a surface with atomic and molecular ions
US5160846A (en) * 1990-10-03 1992-11-03 Eaton Corporation Method and apparatus for reducing tilt angle variations in an ion implanter
US5270222A (en) * 1990-12-31 1993-12-14 Texas Instruments Incorporated Method and apparatus for semiconductor device fabrication diagnosis and prognosis
US5293216A (en) * 1990-12-31 1994-03-08 Texas Instruments Incorporated Sensor for semiconductor device manufacturing process control
US5177366A (en) * 1992-03-06 1993-01-05 Eaton Corporation Ion beam implanter for providing cross plane focusing
US5432352A (en) * 1993-09-20 1995-07-11 Eaton Corporation Ion beam scan control
US5481116A (en) * 1994-06-10 1996-01-02 Ibis Technology Corporation Magnetic system and method for uniformly scanning heavy ion beams
JP3729604B2 (ja) * 1997-06-16 2005-12-21 住友イートンノバ株式会社 イオン注入装置
US6137112A (en) * 1998-09-10 2000-10-24 Eaton Corporation Time of flight energy measurement apparatus for an ion beam implanter
JP3976455B2 (ja) * 1999-09-17 2007-09-19 株式会社日立製作所 イオン注入装置
US6521895B1 (en) * 1999-10-22 2003-02-18 Varian Semiconductor Equipment Associates, Inc. Wide dynamic range ion beam scanners
US6414329B1 (en) * 2000-07-25 2002-07-02 Axcelis Technologies, Inc. Method and system for microwave excitation of plasma in an ion beam guide
US6534775B1 (en) * 2000-09-01 2003-03-18 Axcelis Technologies, Inc. Electrostatic trap for particles entrained in an ion beam
US6908836B2 (en) * 2002-09-23 2005-06-21 Applied Materials, Inc. Method of implanting a substrate and an ion implanter for performing the method
US20030197133A1 (en) * 2002-04-23 2003-10-23 Turner Norman L. Method and apparatus for scanning a workpiece in a vacuum chamber
US6924215B2 (en) * 2002-05-29 2005-08-02 Taiwan Semiconductor Manufacturing Co., Ltd Method of monitoring high tilt angle of medium current implant
KR20040060401A (ko) * 2002-12-30 2004-07-06 주식회사 하이닉스반도체 반도체소자의 트랜지스터 형성 방법
US6777696B1 (en) * 2003-02-21 2004-08-17 Axcelis Technologies, Inc. Deflecting acceleration/deceleration gap
US6881966B2 (en) * 2003-05-15 2005-04-19 Axcelis Technologies, Inc. Hybrid magnetic/electrostatic deflector for ion implantation systems
US6972236B2 (en) * 2004-01-30 2005-12-06 Chartered Semiconductor Manufacturing Ltd. Semiconductor device layout and channeling implant process
US7135691B2 (en) * 2004-04-05 2006-11-14 Axcelis Technologies, Inc. Reciprocating drive for scanning a workpiece through an ion beam
WO2005099072A1 (en) * 2004-04-05 2005-10-20 Axcelis Technologies, Inc. Reciprocating drive system for scanning a workpiece
US7119343B2 (en) * 2004-05-06 2006-10-10 Axcelis Technologies, Inc. Mechanical oscillator for wafer scan with spot beam
US7462843B2 (en) * 2004-05-18 2008-12-09 Advanced Ion Bean Technology Inc. Apparatus and methods for ion beam implantation
US6992310B1 (en) * 2004-08-13 2006-01-31 Axcelis Technologies, Inc. Scanning systems and methods for providing ions from an ion beam to a workpiece
US6953942B1 (en) * 2004-09-20 2005-10-11 Axcelis Technologies, Inc. Ion beam utilization during scanned ion implantation

Also Published As

Publication number Publication date
US20080067438A1 (en) 2008-03-20
JP2009535814A (ja) 2009-10-01
US7692164B2 (en) 2010-04-06
KR101353011B1 (ko) 2014-01-22
TW200746271A (en) 2007-12-16
WO2007127084A1 (en) 2007-11-08
KR20090010081A (ko) 2009-01-28
TWI435378B (zh) 2014-04-21

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