JP5231105B2 - 偏長ナノ構造を成長させるための触媒ナノ粒子の形成方法 - Google Patents
偏長ナノ構造を成長させるための触媒ナノ粒子の形成方法 Download PDFInfo
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Description
・基板の主面上に、非触媒マトリクスに埋め込まれた触媒ナノ粒子を含む3次元構造を得ること、
・3次元構造の側壁において非触媒マトリクスの少なくとも一部を選択的に除去して、少なくとも1つの触媒ナノ粒子を露出させること、
・基板主面に、少なくとも1つの開口を含む犠牲パターンを設けること、
・少なくとも1つの開口を、触媒ナノ粒子が埋め込まれた非触媒マトリクスを含む材料で充填すること、
・犠牲パターンを除去して、3次元構造を形成すること、
・少なくとも1つの開口を、触媒材料が埋め込まれた非触媒マトリクスを含む材料で充填すること、
・アニール工程を行って、触媒ナノ粒子を形成すること、
・犠牲材料層、例えば、有機材料層を基板の主面上に設けること、
・所定のパターンに従って、犠牲材料層に少なくとも1つの開口を形成し、基板の主面の一部を露出させること、
・基板の主面上に、非触媒マトリクスに埋め込まれた触媒ナノ粒子を含む3次元構造を得ること、
・3次元構造の側壁において非触媒マトリクスの少なくとも一部を選択的に除去して、少なくとも1つの触媒ナノ粒子を露出させること、
・少なくとも1つの露出した触媒ナノ粒子を触媒として用いて、少なくとも1つの偏長ナノ構造を成長させること、
・最初に、基板の上に犠牲層を設けること、
・開口を有する犠牲パターンを前記基板に設けて、前記開口の下部において基板の上面を露出させること、
・前記開口を非触媒マトリクスに埋め込まれた触媒材料で、少なくとも部分的に充填すること、
・キャッピング層を、触媒材料を含む非触媒マトリクスの上に設けること、
・犠牲層を除去して、非触媒マトリクスの側壁を露出させ、垂直(3D)構造を形成すること、
・任意には、触媒材料が触媒ナノ粒子へ変換するように、基板をアニールすること、
・垂直(3D)構造の側壁において非触媒マトリクスを選択的にエッチング(部分的に除去)して、ナノ粒子を露出させること、
・基板の主面上に、非触媒マトリクスに埋め込まれた触媒ナノ粒子を含む3次元構造を得ること、
・3次元構造の側壁において非触媒マトリクスの少なくとも一部を選択的に除去して、少なくとも1つの触媒ナノ粒子を露出させること、
Claims (22)
- 少なくとも1つの触媒ナノ粒子(8)を、基板(1a,1b)の主面(15)上にある3次元構造の少なくとも1つの側壁(10)に設けるための方法であって、
該主面(15)は面内にあり、3次元構造の側壁(10)は基板(1a,1b)の主面の面に対してほぼ垂直な面内にあり、
・主面(15)上に、非触媒マトリクス(5)に埋め込まれた触媒ナノ粒子(7)を含む3次元構造を得ること、
・3次元構造の側壁(10)において非触媒マトリクス(5)の少なくとも一部を選択的に除去して、少なくとも1つの触媒ナノ粒子(8)を露出させること、を含む方法。 - 3次元構造を得ることは、
・基板(1a,1b)の主面(15)に、少なくとも1つの開口(2)を含む犠牲パターン(3)を設けること、
・少なくとも1つの開口(2)を、触媒ナノ粒子(7)が埋め込まれた非触媒マトリクス(5)を含む材料で充填すること、
・犠牲パターン(3)を除去して、3次元構造を形成すること、を含む請求項1記載の方法。 - 少なくとも1つの開口(2)を、触媒ナノ粒子(7)が埋め込まれた非触媒マトリクス(5)を含む材料で充填することは、
・少なくとも1つの開口(2)を、触媒材料が埋め込まれた非触媒マトリクスを含む材料で充填すること、
・アニール工程を行って、触媒ナノ粒子(7)を形成すること、を含む請求項2記載の方法。 - アニール工程は、高速熱アニールによって、350℃〜900℃の温度で行うようにした請求項3記載の方法。
- 少なくとも1つの開口(2)を、触媒材料が埋め込まれた非触媒マトリクスを含む材料で充填することは、共堆積技術によって行うようにした請求項3または4記載の方法。
- 少なくとも1つの開口(2)を、触媒材料が埋め込まれた非触媒マトリクスを含む材料で充填することは、電気化学堆積または無電解堆積によって行うようにした請求項5記載の方法。
- 犠牲パターン(3)を設けることは、
・犠牲材料層を基板(1a,1b)の主面(15)上に設けること、
・所定のパターンに従って、犠牲材料層に少なくとも1つの開口(2)を形成し、基板(1a,1b)の主面(15)の一部を露出させること、を含む請求項2〜6のいずれかに記載の方法。 - 犠牲材料層を設けることは、有機材料層を設けることによって行うようにした請求項7記載の方法。
- 少なくとも1つの開口(2)を形成することは、フォトリソグラフィおよび異方性ドライエッチングプロセスを用いて、犠牲材料層をパターン加工することによって、所定のパターンを犠牲材料層に転写するようにした請求項7または8記載の方法。
- 3次元構造の側壁(10)において非触媒マトリクス(5)の少なくとも一部を選択的に除去する前に、キャッピング層(6)を非触媒マトリクス(5)の上部に設けることをさらに含む請求項1〜9のいずれかに記載の方法。
- 基板は、キャリア(1a)と、電気化学堆積または無電解堆積を開始するためのシード層(1b)とを含む請求項1〜10のいずれかに記載の方法。
- キャリア(1a)は、半導体ウエハである請求項11記載の方法。
- シード層(1b)は、WCNまたはCuを含む連続層または不連続層である請求項11または12記載の方法。
- シード層(1b)は、Pd,Pt及び/又はRuの粒子を含む連続層または不連続層でる請求項11〜13のいずれかに記載の方法。
- 犠牲パターン(3)を除去した後、シード層(1b)の露出部分を除去することをさらに含む請求項11〜14のいずれかに記載の方法。
- 少なくとも1つの偏長ナノ構造(9)を、基板(1a,1b)の主面(15)上にある3次元構造の少なくとも1つの側壁(10)に形成するための方法であって、
該主面(15)は面内にあり、3次元構造の側壁(10)は基板(1a,1b)の主面(15)の面に対してほぼ垂直な面内にあり、
・基板の主面(15)上に、非触媒マトリクス(5)に埋め込まれた触媒ナノ粒子(7)を含む3次元構造を得ること、
・3次元構造の側壁(10)において非触媒マトリクス(5)の少なくとも一部を選択的に除去して、少なくとも1つの触媒ナノ粒子(8)を露出させること、
・少なくとも1つの露出した触媒ナノ粒子(8)を触媒として用いて、少なくとも1つの偏長ナノ構造(9)を成長させること、を含む方法。 - 少なくとも1つの偏長ナノ構造(9)を成長させることは、少なくとも1つの偏長ナノ構造(9)が基板(1a,1b)の主面(15)の面に対してほぼ平行な面内にあるように行うようにした請求項16記載の方法。
- 少なくとも1つの偏長ナノ構造(9)を成長させることは、化学的気相成長法、気相−液相−固相法、または気相−固相−固相法によって行うようにした請求項16または17記載の方法。
- 3次元構造の側壁(10)において非触媒マトリクス(5)の少なくとも一部を選択的に除去する前に、キャッピング層(6)を非触媒マトリクス(5)の上部に設けることをさらに含む請求項16〜18のいずれかに記載の方法。
- 半導体デバイスの製造プロセスにおける、請求項1〜19のいずれかに記載の方法の使用。
- 半導体デバイスでの相互接続の形成における、請求項16〜19のいずれかに記載の方法の使用。
- 基板(1a,1b)の主面(15)上に、少なくとも1つの3次元構造を備え、該主面(15)は面内にある半導体デバイスであって、
半導体デバイスの少なくとも1つの側壁(10)に形成された、少なくとも1つの偏長ナノ構造(9)をさらに備え、
少なくとも1つの偏長ナノ構造(9)は、基板(1a,1b)の主面(15)の面に対してほぼ平行な面内にあり、請求項16〜19のいずれかに記載の方法によって形成されるようにした半導体デバイス。
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